Abstract: A semiconductor device package includes a semiconductor device having connection pads formed thereon, with the connection pads being formed on first and second surfaces of the semiconductor device with edges of the semiconductor device extending therebetween. A first passivation layer is applied on the semiconductor device and a base dielectric laminate is affixed to the first surface of the semiconductor device that has a thickness greater than that of the first passivation layer. A second passivation layer having a thickness greater than that of the first passivation layer is applied over the first passivation layer and the semiconductor device to cover the second surface and the edges of the semiconductor device, and metal interconnects are coupled to the connection pads, with the metal interconnects extending through vias formed through the first and second passivation layers and the base dielectric laminate sheet to form a connection with the connection pads.

Abstract: A method of manufacturing a photoelectric conversion element includes: forming a current-collecting wiring with a conductive paste containing therein silver particles and a low-melting point glass frit on a transparent conductive substrate when the photoelectric conversion element having a structure in which an electrolyte layer is provided between a porous electrode on the transparent conductive substrate, and a counter substrate is manufactured.

Abstract: A thin film solar cell module including a plurality of cells in which a transparent electrode, a photoelectric conversion layer, and a rear surface electrode are stacked in this order includes a first photoelectric conversion layer separation trench and a rear surface electrode separation trench in which the photoelectric conversion layer is removed between a cell connection apertural area and a transparent electrode separation trench and between the cell connection apertural area and a rear surface electrode separation trench, and white reflection materials having an insulation property are formed at the inside of the trenches. The structure improves light use efficiency of thin film solar cells, and achieves thin film solar cell modules easily manufacturable.

Abstract: Disclosed is an integrated thin film photovoltaic module that includes: a first cell and a second cell, all of which are formed respectively by stacking on a substrate a lower electrode, a photoelectric conversion layer, and an upper electrode, wherein the lower electrode of the first cell and the lower electrode of the second cell are separated by a lower electrode separation groove, and wherein a plurality of through holes are formed to be spaced from each other in the photoelectric conversion layer of the second cell in order to connect the upper electrode of the first cell with the lower electrode of the second cell.

Abstract: Disclosed are silicon-free aluminum paste compositions for forming an aluminum back electrode with large silicon particles, processes to form aluminum back electrode of solar cells, and the solar cells so-produced. The process applys a silicon-free aluminum paste on a back surface of a p-type silicon substrate. The silicon-free aluminum paste compositions have an additive comprising calcium oxide, calcium oxalate, calcium carbonate, calcium phosphate, or mixtures thereof; an aluminum powder; and an organic vehicle. The process also applys a metal paste on a front side of the p-type silicon substrate and firing the p-type silicon substrate after the application of the aluminum paste at a peak temperature in the range of 600-950° C., whereupon firing the additive promotes a growth of silicon particles having an equivalent diameter in the range of 2-15 microns in a particulate layer of the aluminum back electrode.

Abstract: A dielectric material layer is formed on a front surface of a photovoltaic device. A patterned PMMA-type-material-including layer is formed on the dielectric material layer, and the pattern is transferred into the top portion of the photovoltaic device to form trenches in which contact structures can be formed. In one embodiment, a blanket PMMA-type-material-including layer is deposited on the dielectric material layer, and is patterned by laser ablation that removes ablated portions of PMMA-type-material. The PMMA-type-material-including layer may also include a dye to enhance absorption of the laser beam. In another embodiment, a blanket PMMA-type-material-including layer may be deposited on the dielectric material layer and mechanically patterned to form channels therein. In yet another embodiment, a patterned PMMA-type-material-including layer is stamped on top of the dielectric material layer.

Abstract: The invention teaches novel structure and methods for producing electrical current collectors and electrical interconnection structure. Such articles find particular use in facile production of modular arrays of photovoltaic cells. The current collector and interconnecting structures may be initially produced separately from the photovoltaic cells thereby allowing the use of unique materials and manufacture. Subsequent combination of the structures with photovoltaic cells allows facile and efficient completion of modular arrays. Methods for combining the collector and interconnection structures with cells and final interconnecting into modular arrays are taught.

Abstract: A solar cell includes a substrate, a semiconductor layer, a first busbar, and a second busbar. Along a connecting line, the first busbar has contact pads which have a maximum width bImax, perpendicular to the connecting line and between which there is respectively located on the connecting line a current collecting area which makes contact with the contact pads in a contact area, having on both sides of the connecting line two outer points whose spacing perpendicular to the connecting line defines a maximum width bSmax of the current collecting area. Width b of the current collecting area and bImax<bSmax, starting from one contact pad up to an adjacent contact pad, decreases down to a minimum width bSmin between two inner points, and then increases up to the adjacent contact pad to a maximum width bSmax?.

Abstract: To provide a heterojunction photoelectric conversion device including passivation layers for reducing surface defects of a silicon substrate. The photoelectric conversion device includes a first silicon semiconductor layer which is in contact with one surface of a single crystal silicon substrate; a second silicon semiconductor layer which is in contact with the first silicon semiconductor layer; a third silicon semiconductor layer which is in contact with the other surface of the single crystal silicon substrate; and a fourth silicon semiconductor layer which is in contact with the third silicon semiconductor layer. Further, the fluorine concentration in the first silicon semiconductor layer and the third silicon semiconductor layer is lower than or equal to 1×1017 atoms/cm3.

Abstract: A photovoltaic device is provided in which the tunneling barrier for hole collection at either the front contact or the back contact of a silicon heterojunction cell is reduced, without compromising the surface passivation either the front contact or at the back contact. This is achieved in the present disclosure by replacing the intrinsic and/or doped hydrogenated amorphous silicon (a-Si:H) layer(s) at the back contact or at the front contact with an intrinsic and/or doped layer(s) of a semiconductor material having a lower valence band-offset than that of a:Si—H with c-Si, and/or a higher activated doping concentration compared to that of doped hydrogenated amorphous Si. The higher level of activated doping is due to the higher doping efficiency of the back contact or front contact semiconductor material compared to that of amorphous Si, and/or modulation doping of the back or front contact semiconducting material.

Abstract: A three-dimensional (3D) Trench detector and a method for fabricating the detector are disclosed. The 3D-Trench detector includes a bulk of semiconductor material that has first and second surfaces separated from each other by a bulk thickness, a first electrode in the form of a 3D-Trench, and a second electrode in the form of a 3D column. The first and second electrodes extend into the bulk along the bulk thickness. The first and second electrodes are separated from each other by a predetermined electrode distance, and the first electrode completely surrounds the second electrode along essentially the entire distance that the two electrodes extend into the bulk such that the two electrodes are substantially concentric to each other. The fabrication method includes doping a first narrow and deep region around the periphery of the bulk to form the first electrode, and doping a second narrow and deep region in the center of the bulk to form the second electrode.

Abstract: A photoelectrode, methods of making and using, including systems for water-splitting are provided. The photoelectrode can be a semiconductive material having a photocatalyst such as nickel or nickel-molybdenum coated on the material.

Abstract: A microelectronic assembly and method of making, which includes a first microelectronic element (including a substrate with first and second opposing surfaces, a semiconductor device, and conductive pads at the first surface which are electrically coupled to the semiconductor device) and a second microelectronic element (including a handier with first and second opposing surfaces, a second semiconductor device, and conductive pads at the handler first surface which are electrically coupled to the second semiconductor device). The first and second microelectronic elements are integrated such that the second surfaces face each other. The first microelectronic element includes conductive elements each extending from one of its conductive pads, through the substrate to the second surface. The second microelectronic element includes conductive elements each extending between the handler first and second surfaces.

Abstract: A lead-free paste composition contains an electrically conductive silver powder, one or more glass frits or fluxes, and a lithium compound dispersed in an organic medium. The paste is useful in forming an electrical contact on the front side of a solar cell device having an insulating layer. The lithium compound aids in establishing a low-resistance electrical contact between the front-side metallization and underlying semiconductor substrate during firing.

Abstract: Disclosed herein is a transistor including: a semiconductor layer; a first gate insulation film and a first interlayer insulation film which are provided on a specific surface side of the semiconductor layer; a first gate electrode provided at a location between the first gate insulation film and the first interlayer insulation film; an insulation film provided on the other surface side of the semiconductor layer; source and drain electrodes provided by being electrically connected to the semiconductor layer; and a shield electrode layer provided in such a way that at least portions of the shield electrode layer face edges of the first gate electrode, wherein at least one of the first gate insulation film, the first interlayer insulation film and the insulation film include a silicon-oxide film.

Abstract: A method of forming a photovoltaic device that includes providing an absorption layer of a first crystalline semiconductor material having a first conductivity type, epitaxially growing a second crystalline semiconductor layer of a second conductivity type that is opposite the first conductivity type, and growing a doped amorphous or nanocrystalline passivation layer of a second conductivity type that is opposite to the first conductivity type. The first conductivity type may be p-type and the second conductivity type may be n-type, or the first conductivity type may be n-type and the second conductivity type may be p-type. The temperature of the epitaxially growing the second crystalline semiconductor layer does not exceed 500° C. Contacts are formed in electrical communication with the absorption layer and the second crystalline semiconductor layer.

Abstract: An apparatus includes a flip-chip semiconductor substrate, a light detection element configured to be formed over the flip-chip semiconductor substrate and to have a laminate structure including a first semiconductor layer of a first-conductive-type, a light-absorption layer formed over the first semiconductor layer, and a second semiconductor layer of a second-conductive-type formed over the light-absorption layer, an inductor configured to be connected to the light detection element over the flip-chip semiconductor substrate, an output electrode for bump connection configured to output a current generated by the light detection element through the inductor, a bias electrode for bump connection configured to apply a bias voltage to the light detection element through a bias electrode, and a line configured to cause a metal line of the inductor and the light detection element to be connected to the output electrode or the bias electrode.

Abstract: Back contact back junction solar cell and methods for manufacturing are provided. The back contact back junction solar cell comprises a substrate having a light capturing frontside surface with a passivation layer, a doped base region, and a doped backside emitter region with a polarity opposite the doped base region. A backside passivation layer and patterned reflective layer on the emitter form a light trapping backside mirror. An interdigitated metallization pattern is positioned on the backside of the solar cell and a permanent reinforcement provides support to the cell.

Abstract: The present invention relates to a photovoltaic device comprising silicon microparticles and to a method of producing the same.

Abstract: The present invention provides a modular approach to preparing a large array of substituted cyclometalated compounds which behave as dyes having intense absorbance bands in the visible spectrum. The compounds include at least one terpyridine-type ligand (tpy) and one cyclometalated tridentate ligand having the bonding motif N,C,N? or C,N, N?. In particular, compounds of formula (I) and formula (II), as shown, where M and R1 to R4 are as defined herein, are disclosed. The utility of these compounds in dye-sensitized solar cells (DSSCs) is also taught.

Abstract: The invention is directed to a polymer thick film conductive composition comprising (a) a conductive silver-coated copper powder; and (b) an organic medium comprising two different resins and organic solvent, wherein the ratio of the weight of the conductive silver-coated copper powder to the total weight of the two different resins is between 5:1 and 45:1. The invention is further directed to a method of electrode grid and/or bus bar formation on thin-film photovoltaic cells using the composition and to cells formed from the method and the composition.

Abstract: Certain embodiments provide an imaging system including a light guiding member supported on a circuit substrate so as to be capable of lighting an object, an optical image-forming member and a solid-state imaging device. The optical image-forming member is arranged on the circuit substrate so as to have an optical axis thereof parallel to the circuit substrate, is arranged on the circuit substrate so as to be able to receive reflected light from the object, emits the reflected light in an oblique direction with respect to a surface of the circuit substrate, and forms an image at a predetermined distance position. The solid-state imaging device includes a light receiving surface that is oblique with respect to the circuit substrate surface, and is mounted on the surface of the circuit substrate so as to have the receiving surface positioned at a position where the image is formed.

Abstract: In a method of manufacturing a detection device including a plurality of pixels arrayed on a substrate, the pixels each including a switch element and a conversion element including an impurity semiconductor layer disposed on an electrode, which is disposed above the switch element, which is isolated per pixel, and which is made of a transparent conductive oxide joined to the switch element, and further including an interlayer insulating layer, which is made of an organic material, which is disposed between the switch elements and the electrodes, and which covers the switch elements, the method includes insulating members each made of an inorganic material and disposed to cover the interlayer insulating layer between adjacent two of the electrodes in contact with the interlayer insulating layer, and forming an impurity semiconductor film covering the insulating members and the electrodes and becoming the impurity semiconductor layer.

Abstract: In a method of manufacturing a detection device including pixels on a substrate, each pixel including a switch element and a conversion element including an impurity semiconductor layer on an electrode, which is disposed above the switch element and isolated per pixel, the switch element and the electrode being connected in a contact hole formed in a protection layer and an interlayer insulating layer, which are disposed between the switch elements and the electrodes, the method includes forming insulating members over the interlayer insulating layer between the electrodes in contact with the interlayer insulating layer, forming an impurity semiconductor film covering the insulating members and the electrodes, and forming a coating layer covering an area of the protection layer where an orthographically-projected image of a portion of the electrode is positioned, the portion including a level difference within the contact hole.

Abstract: A solar battery cell and related methodology are provided which enable a TAB wire to be accurately connected to an intended position, thus allowing a possible increase in manufacturing costs to be suppressed. The solar battery cell can include a substrate, a plurality of finger electrodes formed on a light receiving surface of the substrate, and a back surface electrode on a back surface of the substrate, the back surface electrode to be connected to a plurality of finger electrodes on an adjacent cell by applying a first TAB wire via a conductive adhesive, wherein the back surface electrode has omitted portions arranged to define at least one alignment marking indicative of a position where the first TAB wire is to be applied, the at least one alignment marking having a width less than a width of said first TAB wire.

Abstract: In a solid-state image pickup device including a pixel that includes a photoelectric conversion portion, a carrier holding portion, and a plurality of transistors, the solid-state image pickup device further includes a first insulating film disposed over the photoelectric conversion portion, the carrier holding portion, and the plurality of transistors, a conductor disposed in an opening of the first insulating film and positioned to be connected to a source or a drain of one or more of the plurality of transistors, and a light shielding film disposed in an opening or a recess of the first insulating film and positioned above the carrier holding portion.

Abstract: A light-transmitting solar cell module includes a light-transmitting portion that allows light to pass through from a front surface to a rear surface of a power generation portion. A portion of the light-transmitting portion is covered by an insulating non-transparent member.

Abstract: In a photoelectric conversion apparatus including a plurality of focus detection pixels, each focus detection pixel including a photoelectric conversion element, the photoelectric conversion element having a light receiving surface, and a plurality of wiring layers to read a signal supplied by the photoelectric conversion element, the photoelectric conversion apparatus further includes a light shielding film covering a part of the photoelectric conversion element and having the lower surface positioned closer to a plane, which includes a light receiving surface of the photoelectric conversion element and which is parallel to the light receiving surface, than a lower surface of the lowermost one of the plurality of wiring layers.

Abstract: A photoelectric conversion module includes a first photoelectric cell, a second photoelectric cell, the second photoelectric cell being adjacent to the first photoelectric cell, a first electrode, the first electrode corresponding to the first photoelectric cell, a second electrode, and a connecting member disposed between the first photoelectric cell and the second photoelectric cell, the connecting member electrically connecting the first electrode and the second electrode to each other, the connecting member including a first conductive bump, a second conductive bump, and a conductive connector part contacting the first and second conductive bumps.

Abstract: The present invention relates to a solar cell assembly, comprising a solar cell attached to a bonding pad and a cooling substrate and wherein the bonding pad and the cooling substrate are joined to each other in a planar and flush manner such that the bonding pad and the cooling substrate are connected to each other in form of a solid state connection. The invention further relates to a solar cell assembly that includes a solar cell attached to a bonding pad and a cooling substrate and wherein the bonding pad is attached on a surface of the cooling substrate such that the bonding pad and the cooling substrate are connected to each other in form of a solid state connection. Also, a method for manufacture of such solar cell assemblies.

Abstract: According to one embodiment, a solid-state imaging device includes a photodiode includes an N-type region and a P-type region, a floating diffusion region, and a transfer transistor. The N-type diffusion region of the photodiode comprises a first semiconductor region and a second semiconductor region formed shallower than the first semiconductor region. An end portion of the first semiconductor region is positioned on the floating diffusion region side rather than an end portion of a gate electrode of the transfer transistor. An end portion of the second semiconductor region is set in substantially the same position as that of the end portion of the gate electrode of the transfer transistor.

Abstract: The present invention relates to an electro-optical device provided with an electrode (10). The electrode comprising an electrically conductive structure extending in a plane. The structure comprises a grid of elongated elements (12) with length L and a width dimension D in said plane. The electrically conductive structure further comprises one or more contactfields (14) having an inscribed circle with a radius of at least 2D and a circumscribed circle with a radius of at most three times L. The area occupied by the contactfields (14) is at most 20% of the area occupied by the grid of elongated elements (12).

Abstract: A solar cell includes a base substrate including a first surface and a second surface opposite the first surface, the base substrate being configured to have sunlight incident on the first surface, a doping layer on the first surface of the base substrate, a first passivation layer on the doping layer, the first passivation layer including hydrogen, a first capping layer on the first passivation layer, the first capping layer being configured to prevent discharge of hydrogen from the first passivation layer, a first electrode on the first capping layer, and a second electrode on the second surface of the base substrate.

Abstract: Disclosed are configurations of long-range ordered features of solar cell materials, and methods for forming same. Some features include electrical access openings through a backing layer to a photovoltaic material in the solar cell. Some features include textured features disposed adjacent a surface of a solar cell material. Typically the long-range ordered features are formed by ablating the solar cell material with a laser interference pattern from at least two laser beams.

Abstract: A method of manufacturing a solar cell includes preparing a base substrate having a first conductive type; diffusing an impurity having a second conductive type (opposite the first conductive type) into the base substrate to form an emitter layer having a first impurity concentration on the base substrate and a by-product layer on the emitter layer; irradiating a laser beam onto the emitter layer corresponding to a first region of the base substrate to form a front contact portion having a second impurity concentration higher than the first impurity concentration; irradiating the laser beam onto the by-product layer to remove the by-product layer corresponding to the first region; removing the by-product layer from an area outside of the first region; forming an anti-reflection layer on the base substrate; forming a front electrode on the anti-reflection layer corresponding to the first region; and forming a back electrode on the base substrate.

Abstract: A package structure having MEMS elements includes: a wafer having MEMS elements, electrical contacts and second alignment keys; a plate disposed over the MEMS elements and packaged airtight; transparent bodies disposed over the second alignment keys via an adhesive; an encapsulant disposed on the wafer to encapsulate the plate, the electrical contacts and the transparent bodies; bonding wires embedded in the encapsulant and each having one end connecting a corresponding one of the electrical contacts and the other end exposed from a top surface of the encapsulant; and metal traces disposed on the encapsulant and electrically connected to the electrical contacts via the bonding wires. The present invention eliminates the need to form through holes in a silicon substrate as in the prior art so as to reduce fabrication costs. Further, the present invention accomplishes wiring processes by using a common alignment device to thereby reduce equipment costs.

Abstract: A light-receiving device array includes a photodiode array that is provided with plural light-receiving sections each of which includes a first conductivity type electrode and a second conductivity type electrode, and a carrier, wherein the carrier includes plural pair of electric lines each of which is formed from a first electric line connected to the first conductivity type electrode of each light-receiving section, and a second electric line connected to the second conductivity type electrode of the light-receiving section, a first ground electrode that extends between one pair of electric lines of the plural pair of electric lines and a pair of electric lines adjacent to the one pair of electric lines, and a second ground electrode that is formed on a part of the rear surface and is electrically connected to the first ground electrode.

Abstract: A back contact solar cell according to an embodiment of the invention includes an alignment mark (25a, 25b) in an inner region inside of an outer periphery of an electrode pattern that includes plural electrodes for first conductivity type (24) and plural electrodes for second conductivity type (25), which are formed on one surface side of a semiconductor substrate (21). According to the configuration, alignment accuracy is improved between a back contact of a solar cell and a wiring of a wiring sheet.

Abstract: A solar cell includes a base substrate having a first surface and a second surface opposite the first surface, the base substrate including a crystalline semiconductor and being configured to have solar light incident on the first surface, a doping pattern on a first portion of the second surface, the doping pattern including a first dopant, a first doping layer on a second portion of the second surface, the first doping layer including a second dopant, and the first and second portions of the second surface being different from each other, a first electrode on the first doping layer, and a second electrode on the doping pattern.

Abstract: A solar battery module includes a substrate, a plurality of first striped electrodes formed on the substrate, and a plurality of striped photoelectric transducing layers respectively formed on the corresponding first striped electrode. The solar battery module further includes a plurality of second striped electrodes respectively formed on the corresponding striped photoelectric transducing layer, a plurality of insulating layers respectively formed between the adjacent first striped electrodes, the adjacent photoelectric transducing layers, and the adjacent second striped electrodes, and a plurality of conducting layers respectively formed between the adjacent insulating layers.

Abstract: A see-through solar battery module includes a transparent substrate, a plurality of striped metal electrodes formed on the transparent substrate along a first direction, and a plurality of striped photoelectric transducing layers respectively formed on the corresponding striped metal electrode and the transparent substrate along the first direction. Two lateral sides of each striped photoelectric transducing layer do not contact the transparent substrate. The see-through solar battery module further includes a plurality of striped transparent electrodes respectively formed on the transparent substrate, the corresponding striped metal electrode, and the corresponding striped photoelectric transducing layer along the first direction, so that the plurality of striped metal electrodes and the plurality of striped transparent electrodes are in series connection along a second direction.

Abstract: A semiconductor device including a device substrate having a front side and a back side. The semiconductor device further includes an interconnect structure disposed on the front side of the device substrate, the interconnect structure having a n-number of metal layers. The semiconductor device also includes a bonding pad disposed on the back side of the device substrate, the bonding pad extending through the interconnect structure and directly contacting the nth metal layer of the n-number of metal layers.

Abstract: A method for producing an array a thin-film solar cell with a cell level integrated bypass diode, the includes forming at least three series-connected solar cells; totally separating a bypass diode from a selected parent solar cell; connecting the semiconducting material of the first type of the photovoltaic junction layer of the bypass diode with the semiconducting material of the second type of any one chosen solar cell in the array; and connecting the semiconducting material of the second type of the photovoltaic junction layer of the bypass diode with the semiconducting material of the first type of any other chosen solar cell in the array so that the bypass diode is connected in parallel and in opposition to both the one chosen solar cell and the other chosen solar cell.

Abstract: A solar cell is provided. The solar cell includes a substrate which converts light energy into electric energy, a hole which penetrates through the substrate in a vertical direction, and an upper electrode which has a radial pattern with reference to the hole on a surface of the substrate.

Abstract: An integrated circuit for use, for example, in a backside illuminated imager device includes circuitry provided on a first side of a substrate, a first conductive pad connected to the circuitry and spaced from the first side of the substrate, a second conductive pad spaced from a second side of the substrate, an electrically conductive interconnect formed through the substrate to interconnect the first and second conductive pads, and a dielectric surrounding the second conductive pad and at least a portion of the interconnect. Methods of forming the integrated circuit are also described.

Abstract: For solar cell fabrication, the addition of precursors to printable media to assist etching through silicon nitride or silicon oxide layer thus affording contact with the substance underneath the nitride or oxide layer. The etching mechanism may be by molten ceramics formed in situ, fluoride-based etching, as well as a combination of the two.

Abstract: A manufacturing method of an electrode of a solar cell is provided. The manufacturing method of the electrode of the solar cell includes following steps. A laser doping process is performed to form a selective emitter on a substrate. A laser marking process is performed to form alignment markers on the substrate. The laser doping process and the laser marking process are performed in a same process chamber. An electrode screen printing process is performed to form an electrode on the selective emitter according to the alignment markers. Relative displacement between the alignment markers and the laser doping area (the selective emitter) is avoided so as to reduce the error of the subsequent screen printing process.

Abstract: Fabrication of a single crystal silicon solar cell with an insitu epitaxially deposited very highly doped p-type silicon back surface field obviates the need for the conventional aluminum screen printing step, thus enabling a thinner silicon solar cell because of no aluminum induced bow in the cell. Furthermore, fabrication of a single crystal silicon solar cell with insitu epitaxial p-n junction formation and very highly doped n-type silicon front surface field completely avoids the conventional dopant diffusion step and one screen printing step, thus enabling a cheaper manufacturing process.

Abstract: A method of manufacturing a solar cell includes the steps of: providing a substrate having a front side, a back side and a doped region; forming a conductor layer on the front side; firing the conductor layer at a temperature such that the conductor layer is formed with a first portion embedded into the doped region and a second portion other than the first portion; forming an anti-reflection coating (ARC) layer on the front side and the second portion, wherein the ARC layer covers the conductor layer so that the second portion of the conductor layer is disposed in the ARC layer; and removing the ARC layer on the conductor layer so that the conductor layer has an exposed surface exposed out of the ARC layer, wherein the exposed surface of the conductor layer is substantially flush with a first exposed surface of the ARC layer.

Abstract: A semiconductor device including a semiconductor substrate having oppositely facing first and second surfaces, the first surface being an active surface and provided with an electronic element thereon, a pad electrode to be connected to the electronic element in a peripheral portion of the electronic element on the active surface, a first opening extending from the second surface toward the pad electrode so as not to reach the first surface of the semiconductor substrate, a second opening formed to reach the pad electrode from a bottom surface of the first opening and having a diameter smaller than that of the first opening, an insulating layer formed to cover sidewall surfaces of the first opening and the second opening, and a conductive layer formed, inside of the insulating layer, to cover at least an inner wall surface of the insulating layer and a bottom surface of the second opening.