Abstract: An apparatus and method for producing a dye-sensitized cell are provided, in which a pre-transparent electrode and an opposite electrode are partially bonded, dye molecules are applied to the bonded electrodes followed by washing, an electrolyte is injected, and then the electrodes are hermetically sealed. With the apparatus and method, the manufacturing cost can be reduced and the manufacturing process can be simplified.

Abstract: A method of manufacturing an organic photovoltaic cell is provided that prevents organic layer deterioration during manufacture, wherein the organic photovoltaic cell contains: a pair of electrodes including a first electrode provided on a first substrate and a second electrode provided on a second substrate; and an active layer placed between the pair of electrodes. The method includes: forming a first electrical charge transport layer on the first electrode; forming a first layered structure body by forming an active layer on the first electrical charge transport layer; forming a second layered structure body by forming a second electrical charge transport layer on the second electrode; and joining the first layered structure body and the second layered structure body by bringing the active layer provided on the first layered structure body and the second electrical charge transport layer provided on the second layered structure body into contact with each other.

Abstract: A photoelectric conversion element of the present invention comprises: a first semiconductor layer of a first conductivity type; a first electrode arranged on the back side of the first semiconductor layer a second semiconductor layer of a second conductivity type, the second semiconductor layer on the light-receiving side of the first semiconductor layer; a light-receiving face-side electrode provided on the light-receiving side of the second semiconductor layer; a second electrode arranged on the back side of the first semiconductor layer, and electrically separated from the first semiconductor layer, but connected to the second semiconductor layer; and a penetrating-connecting section penetrating the first semiconductor layer, and connecting the light-receiving face-side electrode with the second electrode, wherein the photoelectric conversion element is characterized in that the first electrode and the second electrode are arranged equidistantly apart from a central axis passing through a center of the ph

Abstract: Provided is an organic photoelectric cell having excellent electrical characteristics. An organic photovoltaic cell (10) comprises: a pair of electrodes of a first electrode (32) and a second electrode (34); and an active layer (40) placed between the pair of electrodes, in which either one of the pair of electrodes comprises an alkali metal salt or an alkaline earth metal salt, and a conductive material.

Abstract: Method for formation of at least one electrical conductor on a semiconductor material (1), characterized in that it comprises the following steps: (E1)—deposition by serigraphy of a first high-temperature paste; (E2)—deposition by serigraphy of a second low-temperature paste at least partially superposed onto the first high-temperature paste deposited during the preceding step.

Abstract: A thin-film solar cell module includes a plurality of solar cells including a first solar cell that is an outermost solar cell. The first electrode of the first solar cell is electrically open, and the first electrode of the first solar cell has a width smaller than widths of the first electrodes of the plurality of solar cells other than the first solar cell. By reducing a width of the outermost solar cell (that is a dead cell), the conversion efficiency of the thin-film solar cell module may be enhanced.

Abstract: Example embodiments of a solar cell including a semiconductor substrate, an N emitter layer formed on a light-absorbing surface of the semiconductor substrate, a p+ region formed on the light-absorbing surface of the semiconductor substrate, a first electrode electrically connected to the p+ region, a second electrode separately formed from the first electrode on the light-absorbing surface of the semiconductor substrate and electrically connected to the N emitter layer, and an auxiliary layer inducing an N+ back surface field (BSF) on the opposite surface to the light-absorbing surface of the semiconductor substrate, and a method of manufacturing the solar cell are provided.

Abstract: The invention permits a plurality of strips of resin adhesive film having a desired width and unwound from a single feeding reel to be simultaneously pasted on a solar cell. For this purpose, the invention comprises the steps of: unwinding a resin adhesive film sheet from a reel on which the resin adhesive film sheet is wound; splitting the unwound resin adhesive film into two or more film strips in correspondence to lengths of wiring material to bond; pasting the strips of resin adhesive film on an electrode of the solar cell; and placing the individual lengths of wiring material on the electrode of the solar cell having the plural strips of resin adhesive film pasted thereon and thermally setting the resin adhesive film by heating so as to fix together the electrode of the solar cell and the wiring material.

Abstract: A device that includes a signal generating unit having a surface that can receive photons, a first metal structure located on the surface of the signal generating unit, and a second metal structure located on the surface of the signal generating unit. The second metal structure being spaced apart from the first metal structure.

Abstract: Contact holes of solar cells are formed by laser ablation to accommodate various solar cell designs. Use of a laser to form the contact holes is facilitated by replacing films formed on the diffusion regions with a film that has substantially uniform thickness. Contact holes may be formed to deep diffusion regions to increase the laser ablation process margins. The laser configuration may be tailored to form contact holes through dielectric films of varying thicknesses.

Abstract: In a method for producing a front-side emitter electrode as front contact for a silicon solar cell on a silicon wafer, a depression is produced in the front side of said silicon wafer. A front-side n-doped silicon layer and an antireflection layer are then produced. A paste is then introduced into the depression, said paste containing electrically conductive metal particles and etching glass frit. Said paste, as a result of momentary heating, etches through the antireflection layer to the n-doped silicon layer making electrical contact with the latter. Afterwards, electrically conductive front contact metal is galvanically attached as front contact onto the heat-treated paste in the depression.

Abstract: A hybrid solar cell is disclosed, which is capable of preventing a defect from occurring in a surface of a semiconductor wafer when forming a thin-film type semiconductor layer on the semiconductor wafer, to thereby improve cell efficiency by the increase of open-circuit voltage, the hybrid solar cell comprising a semiconductor wafer having a predetermined polarity; a first semiconductor layer on one surface of the semiconductor wafer; a second semiconductor layer on the other surface of the semiconductor wafer, wherein the second semiconductor layer is different in polarity from the first semiconductor layer; a first electrode on the first semiconductor layer; and a second electrode on the second semiconductor layer; wherein the first semiconductor layer comprises a lightly doped first semiconductor layer on one surface of the semiconductor wafer; and a highly doped first semiconductor layer on the lightly doped first semiconductor layer.

Abstract: A tandem thin-film photovoltaic module includes a bottom device having a first PV junction including a p+ type absorber having an energy band-gap ranging from 1.0 to 1.2 eV, sandwiched between a first transparent electrode and a lower reflective electrode. The tandem module also includes a top device mechanically coupled to the bottom device. The top device is a bi-facial device having a second PV junction sandwiched by transparent conductive oxide electrodes. The second PV junction includes a second p+ type absorber engineered with an energy band-gap within 1.7 to 2.0 eV. A tandem thin-film photovoltaic module is configured have a superstrate for the top device for receiving sunlight radiation. The tandem thin-film photovoltaic module is configured to covert high-energy electromagnetic radiation to electric current at the top device and convert low-energy electromagnetic radiation to electric current at the bottom device with a combined conversion efficiency of 18% or greater.

Abstract: Methods for forming aggregates of nanomaterials are provided. The aggregates are formed from a liquid dispersion of the nanomaterials in a liquid. The dispersion is aerosolized and the liquid removed from the aerosolized dispersion to provide the aggregates. The aggregates are useful as a photoelectric layer and/or a light-dispersive layer in dye-sensitized solar cells.

Abstract: A solar battery according to the embodiment of the present invention comprises a plurality of solar battery cells formed on a first area of a substrate to include an rear electrode pattern, an light-absorbing layer, an buffer layer and an front electrode layer respectively; a metal film pattern formed on a second area of the substrate to electrically connect to each a plurality of solar battery cells and space each other; and a connection unit formed between the mutually spaced metal film patterns.

Abstract: The solar cell includes a substrate, a semiconductor layer, a first doped pattern and a second doped pattern. The substrate has a first surface adapted to receive solar light and a second surface opposite to the first surface. The semiconductor layer includes an insulating pattern formed on a first area of the second surface of the substrate and a semiconductor pattern formed on a second area of the second surface of the substrate in which the insulating pattern is not formed. The first doped pattern and the second doped pattern are formed either in or on the semiconductor pattern.

Abstract: An improved bifacial solar cell is disclosed. In some embodiments, the front side includes an n-type field surface field, while the back side includes a p-type emitter. In other embodiments, the p-type emitter is on the front side. To maximize the diffusion of majority carriers and lower the series resistance between the contact and the substrate, the regions beneath the metal contacts are more heavily doped. Thus, regions of higher dopant concentration are created in at least one of the FSF or the emitter. These regions are created through the use of selective implants, which can be performed on one or two sides of the bifacial solar cell to improve efficiency.

Abstract: A fabricating method of a dye-sensitizing solar cell (DSSC) is provided. In the method, a working electrode and a counter electrode disposed opposite to each other is provided. The working electrode has a first patterned conductive line, and the counter electrode has a second patterned conductive line. A first gap control layer on at least an outer portion of one of the first and second patterned conductive lines is formed to surround the first and the second patterned conductive lines. Alternatively, the first gap control layer is symmetrically formed on one of the first and second patterned conductive lines. Then, a packaging material is formed on the first gap control layer. Next, the working electrode and the counter electrode are pressed to form a gap between the working electrode and the counter electrode. The packaging material is cured, and an electrolyte is filled into the gap.

Abstract: Embodiments of the invention generally relate to photovoltaic devices and more specifically, to metallic contacts disposed on photovoltaic devices and to the fabrication processes for forming such metallic contacts. In one aspect, a method for contact patterning on a photovoltaic device includes providing a semiconductor structure that includes a front contact layer and a window layer underneath the front contact layer, where the window layer also acts as an etch stop layer. At least one metal layer is deposited on the front contact layer, and a resist is applied on portions of the at least one metal layer. The at least one metal layer and the front contact layer are etched through to achieve the desired metallization.

Abstract: A solar battery according to the embodiment of the present invention includes an rear electrode formed on a substrate and separated by an first through-hole; an light absorbing layer formed on the rear electrode including the first through-hole; a second through-hole exposing the rear electrode through the light absorbing layer; a buffer layer formed on the upper surface and the side surface of the light absorbing layer; a front electrode layer formed on the buffer layer; and a connection wiring extending from the front electrode layer and formed within the second through-hole.

Abstract: Formulations and methods of making semiconductor devices and solar cell contacts are disclosed. The invention provides a method of making a semiconductor device or solar cell contact including ink-jet printing onto a silicon wafer an ink composition, typically including a high solids loading (20-80 wt %) of glass frit and preferably a conductive metal such as silver. The wafer is then fired such that the glass frit fuses to form a glass, thereby forming a contact layer to silicon.

Abstract: Methods for forming Cu—In—Ga—N (CIGN) layers for use in TFPV solar panels are described using reactive PVD deposition in a nitrogen containing atmosphere. In some embodiments, the CIGN layers can be used as an absorber layer and eliminate the need of a selenization step. In some embodiments, the CIGN layers can be used as a protective layer to decrease the sensitivity of the CIG layer to oxygen or moisture before the selenization step. In some embodiments, the CIGN layers can be used as an adhesion layer to improve the adhesion between the back contact layer and the absorber layer.

Abstract: A first photoelectric conversion element for detecting light and converting the light into photoelectrons comprises one buried photodiode formed in a semiconductor substrate, and a plurality of MOS diodes each having an electrode formed on the semiconductor substrate with an insulator interposed therebetween. The buried photodiode has a comb shape, in which a plurality of diverging portions are disposed to diverge from one portion, when viewed from the top thereof, and the respective electrodes of the MOS diodes are disposed so as to be nested between the plurality of diverging portions of the buried photodiode when viewed from the tops thereof.

Abstract: A semiconductor element includes a base-body region of p-type; a charge-generation buried region of a n-type, implementing a photodiode together with the base-body region, configured to create a first potential valley in the base-body region; an accumulation region of n-type, being buried in a part of the upper portion of the base-body region, configured to create a second potential valley deeper than the first potential valley; a transfer-gate insulation film provided on a surface of the base-body region; a transfer-gate electrode provided on the transfer-gate insulation film, configured to control a potential of a transfer channel formed in the base-body region between the charge-generation buried region and the accumulation region; and a recessed-potential creation mechanism configured to create a stair-like-shaped potential barrier for electronic shuttering.

Abstract: A photovoltaic fiber may include a first electrode surrounding a base fiber, a photoactive layer surrounding the first electrode and having a photovoltaic junction positioned in a radial direction. The photovoltaic fiber may also include a second electrode surrounding the photoactive layer is provided.

Abstract: Methods for forming backside illuminated (BSI) image sensors having metal redistribution layers (RDL) and solder bumps for high performance connection to external circuitry are provided. In one embodiment, a BSI image sensor with RDL and solder bumps may be formed using a temporary carrier during manufacture that is removed prior to completion of the BSI image sensor. In another embodiment, a BSI image sensor with RDL and solder bumps may be formed using a permanent carrier during manufacture that partially remains in the completed BSI image sensor. A BSI image sensor may be formed before formation of a redistribution layer on the front side of the BSI image sensor. A redistribution layer may, alternatively, be formed on the front side of an image wafer before formation of BSI components such as microlenses and color filters on the back side of the image wafer.

Abstract: An image sensor module includes a semiconductor chip. Photodiode units are disposed in an active region of the semiconductor chip to convert light into electric signals. Pads are disposed in a peripheral region formed around the active region and the pads are electrically connected to the photodiode units. A connecting region is formed around the peripheral region. Re-distribution layers are electrically connected to respective pads and extend to the connecting region. A transparent substrate covers the photodiode units and the pads and exposes at least a portion of the re-distribution layers. Connecting layers are electrically connected to the respective re-distribution layers and extend to a top surface of the transparent substrate. Connecting members are connected to the respective connecting layers disposed on the top surface of the transparent substrate.

Abstract: A solid-state imaging element including: a sensor substrate in which a photoelectric conversion section is arranged and formed; a circuit substrate in which a circuit for driving the photoelectric conversion section is formed, the circuit substrate being laminated to the sensor substrate; a sensor side electrode drawn out to a surface of the sensor substrate on a side of the circuit substrate and formed as one of a projection electrode and a depression electrode; and a circuit side electrode drawn out to a surface of the circuit substrate on a side of the sensor substrate, formed as one of the depression electrode and the projection electrode, and joined to the sensor side electrode in a state of the circuit side electrode and the sensor side electrode being fitted together.

Abstract: Disclosed are a solar cell apparatus and a method of fabricating the same. The solar cell apparatus includes a substrate; an electrode layer having a first through hole on the substrate; a light absorption layer having a second through hole on the electrode layer; and a window layer having a third through hole overlapped with the second through hole on the light absorption layer. Since the second through hole overlaps with the third through hole, an area of a dead zone, which is a non-active region, is reduced so that the efficiency of the solar cell apparatus is improved.

Abstract: A transparent photovoltaic cell and method of making are disclosed. The photovoltaic cell may include a transparent substrate and a first active material overlying the substrate. The first active material may have a first absorption peak at a wavelength greater than about 650 nanometers. A second active material is disposed overlying the substrate, the second active material having a second absorption peak at a wavelength outside of the visible light spectrum. The photovoltaic cell may also include a transparent cathode and a transparent anode.

Abstract: There is provided a solar cell according to an exemplary embodiment including: a plurality of cells of the solar cell formed on a substrate and each having a rear electrode pattern, a light absorbing layer, a buffer layer, and a front electrode; a through-hole penetrating the substrate; and a bus bar electrically connected with the rear electrode pattern through the through-hole. There is provided a manufacturing method of a solar cell according to another exemplary embodiment, including: forming a through-hole penetrating a substrate; forming a bus bar in an area corresponding to the through-hole on a rear surface of the substrate; and forming a plurality of cells of the solar cell each having a rear electrode pattern, a light absorbing layer, a buffer layer, and a front electrode, on a front surface of the substrate, wherein the bus bar is electrically connected with the rear electrode pattern through the through-hole.

Abstract: The present invention relates to a flexible photoelectrode and a manufacturing method thereof, and a dye-sensitized solar cell using the same. More particularly, the present invention relates to a flexible photoelectrode capable of forming a semiconductor electrode with excellent photoelectric conversion efficiency on a plastic substrate at low temperatures in a simple and stable manner, in which it is prepared by forming a nanocrystalline metal oxide layer calcined at high temperature on a high temperature resistant substrate, and transferring it to a flexible transparent substrate by a transfer method using an HF solution, and a flexible dye-sensitized solar cell comprising the same.

Abstract: A photovoltaic module having non-contacting bus bars and methods of making non-contacting bus bars are disclosed. The fingers are screen printed on the substrate using a paste. The bus bar(s) can be formed over the fingers using a number of techniques that do not dissolve through the passivation layer of the substrate. The bus bar(s) can be screen printed over the fingers using a second paste that is more viscous and/or conductive than the first paste. The bus bar(s) can be a conductive trace that is deposited over the fingers. The bus bar(s) can be a metal wire coated with solder or paste that is positioned on the fingers. Metal plating techniques may also be used to thicken the fingers and/or bus bars. One or more doping steps may be used to form selective emitters under the fingers and bus bar.

Abstract: There is provided a paste for the production of a solar cell electrode, which exhibits high electrical conductivity, low contact resistance, high aspect ratio, superior storage stability and excellent adhesive strength.

Abstract: The invention relates to controllable Fabry-Perot interferometers which are produced with micromechanical (MEMS) technology. Micromechanical interferometers of the prior art have a disadvantage of significantly attenuating infrared radiation. In the inventive solution there is a gap in at least one mirror, serving as a layer of the mirror. The other layers of the mirrors can be made of polycrystalline silicon, which has a negligible attenuation at the infrared range. It is also preferable to provide a hole or a recess in a substrate at the optical area of the interferometer.

Abstract: A photoelectric conversion module in which a plurality of photoelectric cells are modularized and a method of manufacturing the photoelectric conversion module with reduced number of manufacturing processes are provided.

Abstract: A solid-state image pickup apparatus with little or no difference in the dark currents between adjacent photoelectric conversion elements, and that provides a high sensitivity and a low dark current even in a high-speed readout operation, includes a well formed on a wafer, and semiconductor layers formed in the well to constitute photodiodes. A well contact is formed between the semiconductor layers. Element isolation regions are provided between the well contact and the semiconductor layers, and channel stop layers are provided under the element isolation regions. A conductive layer is provided on the element isolation region, and a side wall is provided on a side face of the conductive layer. A distance a between an end of the element isolation region and the conductive layer, a width b of the side wall and a device isolation width c satisfy a relation c>a?b.

Abstract: A photoactive layer in organic photodiodes includes organic photoactive dyes, including squaraines with donor-substituted aromatic substituents as the electron donor component, used as an alternative to polymer hold conductors for bulk heterojunctions typically found in the organic active layer of organic photodiodes.

Abstract: An image sensor including a first region where a pad is to be formed, and a second region where a light-receiving element is to be formed. A pad is formed over a substrate of the first region. A passivation layer is formed over the substrate of the first and second regions to expose a portion of the pad. A color filter is formed over the passivation layer of the second region. A microlens is formed over the color filter. A bump is formed over the pad. A protective layer is formed between the bump and the pad to expose the portion of the pad.

Abstract: Provided are a solar cell apparatus and a method of manufacturing the same. The solar cell apparatus includes: a substrate; a back electrode layer on the substrate; an alloy layer on the back electrode layer; a light absorbing layer on the alloy layer; and a front electrode layer on the light absorbing layer.

Abstract: Disclosed are a solar cell apparatus and a method for manufacturing the same. The solar cell apparatus includes a substrate; a back electrode layer on the substrate; a light absorbing layer on the back electrode layer; and a front electrode layer on the light absorbing layer, wherein an outer peripheral side of the back electrode layer is aligned on a plane different from a plane of an outer peripheral side of the light absorbing layer.

Abstract: Disclosed is a solar cell which is provided with: a semiconductor substrate having a light-receiving surface and a non-light-receiving surface; a PN junction section formed on the semiconductor substrate; a passivation layer formed on the light-receiving surface and/or the non-light-receiving surface; and power extraction electrodes formed on the light-receiving surface and the non-light-receiving surface. The solar cell is characterized in that the passivation layer includes an aluminum oxide film having a thickness off 40 nm or less. As a result of forming a aluminum oxide film having a predetermined thickness on the surface of the substrate, it is possible to achieve excellent passivation performance and excellent electrical contact between silicon and the electrode by merely firing the conductive paste, which is conventional technology.

Abstract: Various laser processing schemes are disclosed for producing various types of hetero junction and homo-junction solar cells. The methods include base and emitter contact opening, selective doping, metal ablation, annealing to improve passivation, and selective emitter doping via laser heating of aluminum. Also, laser processing schemes are disclosed that are suitable for selective amorphous silicon ablation and selective doping for hetero junction solar cells. Laser ablation techniques are disclosed that leave the underlying silicon substantially undamaged. These laser processing techniques may be applied to semiconductor substrates, including crystalline silicon substrates, and further including crystalline silicon substrates which are manufactured either through wire saw wafering methods or via epitaxial deposition processes, or other cleavage techniques such as ion implantation and heating, that are either planar or textured/three-dimensional.

Abstract: Light is illuminated from a back-surface side of a silicon substrate 4. A back-illuminated type imaging device 100 reads out, from a front-surface side of the silicon substrate 4, charges that are generated in the silicon substrate 4 in response to the illuminated light, so as to perform imaging. The back-illuminated type imaging device 100 includes pad portions 17 formed on the back surface of the semiconductor substrate 4, and a plurality of pillars 9 that are formed in the semiconductor substrate 4, are made of a conductive material and electrically connect wiring portions 12 formed on the front surface of the semiconductor substrate 4 and the pad portions 17 to each other.

Abstract: The present embodiment relates to a solar cell and a method for manufacturing the same. A solar cell according to an embodiment includes a substrate comprising silicon semiconductor material; an emitter region formed on a rear surface of the substrate; a back surface field region formed on the rear surface of the substrate, wherein the back surface field region comprising a first back surface field region and a second the back surface field region; a first electrode electrically connected to the emitter region; and a second electrode electrically that is connected to the first back surface field region, wherein the second electrode that is not electrically connected to the second back surface field region.

Abstract: A solar cell includes a substrate of a first conductive type, an emitter layer which is positioned at one surface of the substrate and has a second conductive type opposite the first conductive type, an anti-reflection layer which is positioned on the emitter layer and has a contact line, and an electrode part positioned on the emitter layer exposed by the contact line. The electrode part includes a seed layer directly contacting the emitter layer. The emitter layer has a first thickness of a formation area of the anti-reflection layer and a second thickness of a formation area of the seed layer. The first thickness is different from the second thickness.

Abstract: An image sensor includes a plurality of pixels and a row driver. Each pixel includes a photodiode, a first transfer gate, a second transfer gate, a first storage node, and a second storage node. The row driver is configured to provide signals to the first transfer gate and the second transfer gate of each pixel such that charge is transferred from the photodiode to the first storage node through the first transfer gate while a signal representing charge stored at the second storage node is output from the pixel to a column readout line. The row driver is also configured to provide signals to the first transfer gate and the second transfer gate such that charge is transferred from the photodiode to the second storage node through the second transfer gate while a signal representing charge stored at the first storage node is output from the pixel.

Abstract: A paste composition for an electrode of a solar cell according to the present invention comprises a conductive powder, an organic vehicle, and a glass frit, and the glass frit includes a first glass frit having a first glass transition temperature and a second glass frit having a second glass frit temperature lower than the first glass transition temperature.

Abstract: Disclosed are configurations of long-range ordered features of solar cell materials, and methods for forming same. Some features include electrical access openings through a backing layer to a photovoltaic material in the solar cell. Some features include textured features disposed adjacent a surface of a solar cell material. Typically the long-range ordered features are formed by ablating the solar cell material with a laser interference pattern from at least two laser beams.

Abstract: A solar cell module includes a wiring sheet formed such that n-type and p-type wirings are alternately arranged in a striped pattern on a surface of a sheet-like insulating substrate, and a back contact solar cell formed such that n-type and p-type electrodes electrically connected to impurity diffusion regions are alternately arranged in a striped pattern on one surface of a semiconductor substrate. The electrodes and the wirings are connected through conductors so as to satisfy a one-to-one relationship. The periphery of the conductor is covered with an insulating resin. An insulator having a composition different from the insulating resin is mounted between the adjacent electrodes on the back contact solar cell.