Abstract: An apparatus includes a photonic integrated circuit having an optical phased array, where the optical phased array includes multiple unit cells. Each unit cell includes (i) at least one antenna element configured to transmit or receive optical signals and (ii) a modulator configured to phase-shift the optical signals transmitted or received by the antenna element. Each unit cell is configured to transmit or receive light having multiple polarizations in the optical signals.

Abstract: The disclosure describes a micro Light Emitting Diode (LED) display. The display may include a Printed Circuit Board (PCB) including a plurality of solder pads, a micro LED package including a plurality of micro LED chips, and a plurality of solder electrodes which bond the micro LED chips onto the solder pads of the PCB. The micro LED package may be re-arranged in an Red Green Blue (RGB) state on a temporary fixing film by using a pickup device in accordance with a display pixel configuration, after the micro LED chips are attached to a carrier film.

Abstract: A thin film transistor panel according to an exemplary embodiment includes: a substrate; a first transistor disposed on the substrate and including a first semiconductor layer including a low temperature polysilicon and a first control electrode overlapping the first semiconductor layer; a second transistor disposed on the substrate and including a second semiconductor layer including an oxide semiconductor and a second control electrode overlapping the second semiconductor layer; a first gate insulation layer disposed between the first semiconductor layer and the first control electrode of the first transistor and including a first insulation layer and a second insulation layer; and a second gate insulation layer disposed between the second semiconductor layer and the second control electrode of the second transistor and including the second insulation layer, wherein the density of the first insulation layer may be higher than the density of the second insulation layer, the first semiconductor layer of the f

Abstract: A radiation-emitting semiconductor component is disclosed. In an embodiment, a component includes a semiconductor layer sequence and a carrier on which the semiconductor layer sequence is arranged, wherein the semiconductor layer sequence comprises an active region configured for generating radiation, an n-conducting mirror region and a p-conducting mirror region, wherein the active region is arranged between the n-conducting mirror region and the p-conducting mirror region, and wherein the p-conducting mirror region is arranged closer to the carrier than the active region.

Abstract: The present disclosure provides a display device comprising: a first thin film transistor including a first semiconductor pattern disposed on a substrate and comprising poly-silicon, and a first gate electrode; a middle layer on the first gate electrode; a second thin film transistor including a second semiconductor pattern disposed on the middle layer and comprising an oxide semiconductor, and a second gate electrode; and a storage capacitor including first to fourth storage electrodes overlapping with each other.

Abstract: A display device includes two or more transistors in one pixel, and the two or more transistors include a first transistor of which a channel semiconductor layer is polycrystalline silicon, and a second transistor of which a channel semiconductor layer is an oxide semiconductor.

Abstract: A device includes a substrate with a tunnel barrier disposed on active region defined on the substrate, a monolayer of graphene disposed on the tunnel barrier, a dielectric material disposed on the graphene, and an electrode disposed over a region of the dielectric material. A first voltage is applied across the electrode and the graphene to adjust a Fermi level within the graphene to a Fermi level position within the valence band of the graphene based upon a predetermined emission wavelength. A current is injected into the graphene's conduction band to cause the graphene to emit a broadband hot electron luminescence (HEL) spectrum of photons peaked at the predetermined emission wavelength. The device may be configured as a vertical-tunneling light-emitting hot-electron transistor. The broadband HEL photon emission spectrum emanating from the graphene may be voltage-tunable within the electromagnetic spectrum from UV to THz.

Abstract: Provided are a magneto resistive element and a method of manufacturing the same, and in particular, a magneto resistive element and a method of manufacturing the same that may be applied to a digitizer sensing panel. The magneto resistive element includes a substrate, a first electrode disposed on the substrate, a first hole transport layer disposed on the first electrode, a first magneto resistive layer disposed on the first hole transport layer, wherein the first magneto resistive layer comprises an organic material, a first transport layer disposed on the first magneto resistive layer, a second magneto resistive layer disposed on the first transport layer, wherein the second magneto resistive layer comprises an organic material, a first electron transport layer disposed on the second magneto resistive layer, and a second electrode disposed on the first electron transport layer.

Abstract: An arrangement of light emitting diodes including a first micro-die, a second micro-die, a first bridge, a second bridge and a substrate supporting the first micro-die and the second micro die. The first micro-die includes a first edge having a first end and a second end, a second edge opposite and not parallel to the first edge, a first connecting portion near the first end, and a second connecting portion near the second end.

Abstract: A method of manufacturing a thin film electronic device includes applying a plastic coating to a rigid carrier substrate using a wet casting process, the plastic coating forming a plastic substrate and include a transparent plastic material doped with a UV absorbing additive. Thin film electronic elements are formed over the plastic substrate, and the rigid carrier substrate is released from the plastic substrate. This method forms transparent substrate materials suitable for a laser release process, through doping of the plastic material of the substrate with a UV absorber. This UV absorber absorbs in the wavelength of the lift-off laser (for example 308-351 nm, or 355 nm) with a very high absorption.

Abstract: A light emitting device comprises: an LED chip having a quantum well structure and a light emitting layer made of a gallium nitride compound semiconductor; a first transparent material covering the LED chip; a second transparent material for protecting the LED chip and the first transparent material; and a phosphor for absorbing a part of the light from the LED chip and emitting a light having a wavelength different from the light from the LED chip; wherein the phosphor is included in second transparent material, and the light from the LED chip and the light from said phosphor are mixed to make a white light.

Abstract: A display device and method for fabricating includes patterning a field shield dielectric layer to expose conductors and form a cavity over the conductors. InkJet printing a semiconductor material fills a portion of the cavity in contact with the conductors. An insulation material is deposited on the semiconductor material. A pixel pad is formed over the insulation material and the field shield dielectric layer. A pixel is formed which includes a thin film transistor with an ink jet printed semiconductor layer.

Abstract: This disclosure provides systems and methods for thin film switching devices, such as thin film transistors and thin film diodes, which are integrated in a display apparatus. In one aspect, a thin film switching device is positioned on a rear side of an electromechanical systems (EMS) display element formed over a substrate and is in electrical communication with the EMS display element. In another aspect, the thin film switching device is positioned between the EMS display element and the substrate. A planar layer is disposed between the EMS display element and the thin film switching device, with the planar layer having a planar surface.

Abstract: A pixel structure disposed on a substrate having an array of pixel areas is provided. A common electrode is disposed on the substrate to surround each of the pixel areas. A capacitance storage electrode is disposed on the common electrode. A first passivation layer covers the capacitance storage electrode and the common electrode. A gate insulation layer covers the scan line and the gate electrode. A semiconductor layer is disposed on the gate insulation layer. A data line, a source and a drain are disposed in each of the pixel areas and the source and the drain are disposed on two sides of the semiconductor layer. A second passivation layer has a contact window and covers the data line, the source, and the drain. A pixel electrode is disposed in each of the pixel areas and is electrically connected with the drain through the contact window.

Abstract: An electro-optical device comprises a substrate, a scanning line, a data line, a pixel circuit, and a first storage capacitor holding a first voltage corresponding to a data signal. The first storage capacitor includes a first portion and a second portion connected in parallel. The first portion and the second portion overlap when viewed from a direction orthogonal with respect to the first main surface.

Abstract: A fabricating method of a pixel structure is provided. A substrate has an array of pixel areas. The common electrode wire is positioned only in a portion of the pixel area. A first capacitance storage electrode is formed in each of the pixel areas and electrically connected between two adjacent common electrode wires. A gate insulation layer covers the scan line, the gate electrode, the common electrode wire and the first capacitance storage electrode. A semiconductor layer is formed on the gate insulation layer above the gate electrode. The source and the drain is formed on two sides of the semiconductor layer. A passivation layer is formed on the substrate to cover the data line, the source and the drain. A pixel electrode is formed in each of the pixel areas, and the pixel electrode is electrically connected with the drain through the contact window.

Abstract: A pixel structure disposed on a substrate having an array of pixel areas is provided. The common electrode wire is positioned only in a portion of the pixel area. A first capacitance storage electrode is disposed in each of the pixel areas and electrically connected between two adjacent common electrode wires. A gate insulation layer covers the scan line, the gate electrode, the common electrode wire and the first capacitance storage electrode. A semiconductor layer is disposed on the gate insulation layer above the gate electrode. The source and the drain are disposed on two sides of the semiconductor layer. A passivation layer is disposed on the substrate to cover the data line, the source and the drain. The passivation layer above the drain has a contact window. A pixel electrode is electrically connected with the drain through the contact window.

Abstract: A display device includes a pixel electrode disposed on a first substrate, and including a first portion, a second portion and a connection portion disposed between the first portion and the second portion, a capacitor line disposed on the first substrate and between the first substrate and the connection portion, a nonsymmetrical shaped capacitor electrode disposed on the first substrate and overlapping the pixel electrode and the capacitor line, and electrically connected to the pixel electrode through contact holes, and a common electrode disposed on a second substrate and including first and second opening patterns disposed overlapping the first portion and the second portion of the pixel electrode, respectively.

Abstract: A method for manufacturing a light emitting device comprises: preparing a light emitting component having an active layer of a semiconductor, the active layer comprising a gallium nitride based semiconductor containing indium and being capable of emitting a blue color light; preparing a phosphor capable of absorbing a part of the blue color light emitted from the light emitting component and emitting a yellow color light, wherein selection of the phosphor is controlled based on an emission wavelength of the light emitting component; and combining the light emitting component and the phosphor so that the blue color light from the light emitting component and the yellow color light from the phosphor are mixed to make a white color light.

Abstract: A fabricating method of a pixel structure is provided. First, a substrate with a plurality of pixel areas is provided. A common electrode is formed on the substrate to surround each pixel area. Then, a capacitance storage electrode is formed on the common electrode, and a first passivation layer is formed to cover the capacitance storage electrode and the common electrode. Following that, a scan line and a gate electrode are formed within each pixel area. Next, a gate insulation layer and a semiconductor layer are formed. A data line, a source, and a drain are formed within each pixel area. After that, a second passivation layer is formed on the substrate, and a contact window is formed in the second passivation layer above the drain. Moreover, a pixel electrode is formed within each pixel area, and the pixel electrode is electrically connected with the drain through the contact window.

Abstract: An illuminating means, including a radiation source for emitting electromagnetic radiation in the optical range, a support base, and an electrode arrangement with a first and at least a second electrode. The radiation source is disposed on the support base and connected by connecting wires to the electrode arrangement so as to be electrically conductive, and the radiation source is provided in the form of a first and at least a second semiconductor component. The first electrode is connected to the first semiconductor component via a first contact point, and the second electrode is connected to the second semiconductor component via a second contact point, so as to be electrically conductive. The distance of the first contact point from a center point or a line of symmetry of the support base is different from the distance of the second contact point from the center point or line of symmetry.

Abstract: Disclosed is a display device provided with a photosensor, which can improve sensor sensitivity without affecting display. The display device includes: a photosensor (FS) provided in a display region (1); a visible light blocking filter (18) that blocks visible light, which is disposed on an optical path of light that enters through an image display surface and that reaches the photosensor (FS); and a wavelength conversion layer (24) that is disposed between the visible light blocking filter (18) and the photosensor (FS) and that converts light in a specific wavelength range, which includes a range outside of the visible light range, into visible light.

Abstract: The present invention relates to a light emitting diode with high electrostatic discharge and a fabrication method thereof, and more specifically to a light emitting diode comprising a first electrode layer provided over a upper surface of a first semiconductor layer and a upper surface of a second semiconductor layer; a transparent electrode layer formed on the upper surface of the second semiconductor layer, spaced from the first electrode layer; and a second electrode layer provided on a upper surface of the transparent electrode layer. With the present invention, there is provided a light emitting diode element with resistance against electrostatic discharge and with high reliability being strong against electrical impact, by selecting a structure arranging a form of an electrode differently from a conventional electrode.

Abstract: This invention directs to a light-emitting diode. The light-emitting diode includes a substrate, a semiconductor layer and an active layer. The semiconductor layer is disposed on the substrate and has a plurality of undulating structures. The active layer is conformably disposed on the semiconductor layer to have another plurality of undulating structures.

Abstract: This disclosure provides systems, methods and apparatus, including computer programs encoded on computer storage media, for a display with inactive dummy pixels. A display apparatus may include subpixels having a first electrode layer and a second electrode layer. The first electrode layer of an edge subpixel may include an opening, which may be made large enough to prevent the edge subpixel from actuating. The size of the openings also may be selected to attain a desired overall reflectivity for an array of edge subpixels. For example, the size of the openings may be selected to make the reflectivity of an edge pixel array similar to the reflectivity of a routing area.

Abstract: This application related to an opto-electrical device, comprising a first ACLED having a first n-type semiconductor layer, a first light emitting layer, a first p-type semiconductor layer, a first p-type electrode and a first n-type electrode; a second ACLED having a second n-type semiconductor layer, a second light emitting layer, a second p-type semiconductor layer, a second p-type electrode and a second n-type electrode, wherein each of the first ACLED and the second ACLED are vertical stack structure and is connected in anti-parallel manner.

Abstract: In a display panel, a first electron injection layer is formed between an anode and a light-emitting functional layer, and a hole injection layer is formed between the anode and the first electron injection layer. In other words, the hole injection layer, the first electron injection layer, and the light-emitting functional layer are configured to be laminated on the anode in this order. An electron injection material used for the first electron injection layer is diffused into the hole injection layer, and the diffused electron injection material inhibits or promotes hole transportation of the hole injection layer, so that the amount of holes transported to a light-emitting functional layer is adjusted. As a result, the carrier balance is improved.

Abstract: An organic light-emitting element includes a first electrode, a second electrode, and at least one organic compound layer disposed between the first electrode and the second electrode. The organic compound layer includes a light-emitting layer containing a light-emitting material and being configured to emit light toward the first electrode and the second electrode. The light emitted toward the first electrode is reflected from a reflection plane located at the first electrode to cause interference with the light emitted toward the second electrode. The interference provides an interference intensity distribution having a maximum peak at a wavelength ?1. The light-emitting material of the light-emitting layer exhibits a photoluminescence spectrum having a maximum peak at a wavelength ?2. The organic light-emitting element produces an electroluminescence spectrum having a maximum peak at a wavelength ?3. These wavelengths satisfy the relationships: ?2??3 and |?2??3|<|?2??1|.

Abstract: A method of generating radiation comprises: manufacturing a structure comprising a substrate supporting a layer of InGaAs, InGaAsP, or InGaAlAs material doped with a dopant, said manufacturing comprising growing said layer such that said dopant is incorporated in said layer during growth of the layer; illuminating a portion of a surface of the structure with radiation having photon energies greater than or equal to a band gap of the doped InGaAs, InGaAsP, or InGaAlAs material so as to create electron-hole pairs in the layer of doped material; and accelerating the electrons and holes of said pairs with an electric field so as to generate radiation. In certain embodiments the dopant is Fe. Corresponding radiation detecting apparatus, spectroscopy systems, and antennas are described.

Abstract: The present invention comprises a modular microwave source comprising a novel electromagnetic oscillator based on a modified Blumlein architecture with an integrated antenna. In one or more embodiments, the invention comprises a triplate Blumlein in which the plates are configured and arranged to act as a waveguide and antenna. In one or more embodiments, high-permittivity dielectric materials are disposed between the center plate and one or both of the top and bottom plates to increase the energy storage and lengthen the duration of a damped sinusoid output. In one or more embodiments, photo-conductive semiconductor switches are disposed between the center plate and one or both of the top and bottom plates to act as high-speed switches. In one or more embodiments, a plurality of the modular microwave sources of the invention are arranged in an array, creating a compact, tunable, high-power microwave source suitable for mobile applications.

Abstract: A light emitting device containing a semiconductor light emitting component and a phosphor, the phosphor is capable of absorbing a part of light emitted by the light emitting component and emitting light of a wavelength different from that of the absorbed light, is provided. A straight line connecting a point of chromaticity corresponding to a spectrum generated by the light emitting component and a point of chromaticity corresponding to a spectrum generated by the phosphor is substantially along a black body radiation locus in a chromaticity diagram.

Abstract: A light-emitting element is provided, including a first electrode and a second electrode, a first layer including first and second organic compounds, the first layer being formed between the first electrode and the second electrode wherein the first organic compound is capable of emitting a first light and the second organic compound has an electron transporting property, and a second layer including third and fourth organic compounds, the second layer being formed between the first layer and the second electrode wherein the third organic compound is capable of emitting a second light and has an electron trap property and the fourth organic compound has an electron transporting property.

Abstract: This invention relates to optoelectronic devices of improved efficiency. In particular it relates to light emitting diodes, photodiodes and photovoltaics. By careful design of periodic microstructures, e.g. gratings, associated with such devices more efficient light generation or detection is achieved.

Abstract: A III-nitride light emitting diode (LED) and method of fabricating the same, wherein at least one surface of a semipolar or nonpolar plane of a III-nitride layer of the LED is textured, thereby forming a textured surface in order to increase light extraction. The texturing may be performed by plasma assisted chemical etching, photolithography followed by etching, or nano-imprinting followed by etching.

Abstract: A semiconductor display device using a light-emitting element, which can suppress luminance unevenness among pixels due to the potential drop of a wiring, is provided. Power supply lines to which a power supply potential is supplied are electrically connected to each other in a display region where a plurality of pixels are arranged. Further, an interlayer insulating film is formed over a wiring (an auxiliary power supply line) for electrically connecting the power supply lines to each other in the display region and a gate electrode of a transistor included in a pixel; and the power supply lines are formed over the interlayer insulating film which is formed over the auxiliary power supply line and the gate electrode. Furthermore, a wiring (an auxiliary wiring) formed over the interlayer insulating film is electrically or directly connected to the auxiliary power supply line.

Abstract: The present invention relates to an organic light emitting element and an organic light emitting device including the same. An impurity layer close to an electrode is doped with a small amount, and an impurity layer for a p-n junction is doped with a large amount, such that a high current may flow under a low voltage.

Abstract: A sealed infrared radiation source includes an emitter membrane stimulated by an electrical current conducted through the membrane, which acts like an electrical conductor, wherein the membrane is mounted between first and second housing parts, at least one being transparent in the IR range, each housing part defining a cavity between the membrane and the respective housing part of each side of the membrane. The housing parts are at least partially electrical conductive, and a first of the housing parts is electrically coupled to a first end of the electrical conductor and insulated from the second end of the electrical conductor, the second housing part being electrically coupled to a second end of the electrical conductor and being insulated from the first end of the electrical conductor, thus allowing a current applied from the first housing part to the second housing part to pass through and heat the membrane.

Abstract: This invention details how a low cost opto coupler can be made on Silicon On Insulator (SOI) using conventional integrated circuit processing methods. Specifically, metal and deposited insulating materials are use to realize a top reflector for directing light generated by a silicon PN junction diode to a silicon PN junction photo diode detector. The light generator or LED can be operated either in the avalanche mode or in the forward mode. Also, side reflectors are described as a means to contain the light to the LED-photo detector pair. Furthermore, a serpentine junction PN silicon LED is described for the avalanche mode of the silicon LED. For the forward mode, two LED structures are described in which hole and electrons combine in lightly doped regions away from heavily doped regions thereby increasing the LED conversion efficiency.

Abstract: A semiconductor element according to an embodiment of present application includes a first voltage drop portion providing a first voltage drop, a second voltage drop portion providing a second voltage drop, and a connecting material between the first voltage drop portion and the second voltage drop portion and having a physical dimension smaller than that of at least one of the first voltage drop portion and the second voltage drop portion. The semiconductor element can operate under a total bias voltage. The total bias voltage is greater than the second voltage drop, while the second voltage drop is greater than or equal to the first voltage drop.

Abstract: A method for laterally dividing a semiconductor wafer (1) comprises the method steps of: providing a growth substrate (2); epitaxially growing a semiconductor layer sequence (3), which comprises a functional semiconductor layer (5), onto the growth substrate (2); applying a mask layer (10) to partial regions of the semiconductor layer sequence (3) in order to produce masked regions (11) and unmasked regions (12); implanting ions through the unmasked regions (12) in order to produce implantation regions (13) in the semiconductor wafer (1); and dividing the semiconductor wafer (1) along the implantation regions (13), wherein the growth substrate (2) or at least one part of the growth substrate (2) is separated from the semiconductor wafer.

Abstract: An optoelectronic module includes a layer structure having a plurality of semiconductor layers including a substrate layer, a first layer arrangement and a second layer arrangement arrangement, wherein 1) the first layer arrangement has a light-emitting layer arranged on the substrate layer, 2) the second layer arrangement contains at least one circuit that controls an operating state of the light-emitting layer, and 3) the second layer arrangement is arranged on the substrate layer and/or surrounded by the substrate layer.

Abstract: A light emitting apparatus includes a plurality of single crystal semiconductor thin films that emit light. The single crystal semiconductor thin films are secured in intimate contact to the surface of a substrate or a bonding layer formed on the substrate. A first conductive electrode is formed on the single crystal semiconductor thin film and is connected to a first conductive side metal layer. The first conductive side metal layer is closer to the surface of the substrate than a top surface of the single crystal semiconductor thin film. A second conductive electrode is formed on the single crystal semiconductor thin film. A second conductive side metal layer is connected to the second conductive electrode. The second conductive side metal layer is closer to the surface of the substrate than the top surface of the single crystal semiconductor thin film.

Abstract: A display system includes a projection screen and a projector. The projection screen includes a retarder plate between a polarizer and a transparent screen. The projector projects an image through the polarizer and the retarder plate onto the transparent screen. The image is visible from a first side of the transparent screen but invisible from a second side of the transparent screen because any light passing twice through the retarder plate is blocked by the polarizer.

Abstract: A light emitting device containing a semiconductor light emitting component and a phosphor, the phosphor is capable of absorbing a part of light emitted by the light emitting component and emitting light of a wavelength different from that of the absorbed light, is provided. A straight line connecting a point of chromaticity corresponding to a spectrum generated by the light emitting component and a point of chromaticity corresponding to a spectrum generated by the phosphor is substantially along a black body radiation locus in a chromaticity diagram.

Abstract: An LED-UV lamp that is easily interchangeable within a UV-curing process and scalable in length with a fine resolution so that it is easily customizable to any UV-curing application. The LED-UV lamp may incorporate multiple rows of LEDs and contain corresponding optics that effectively deliver radiant power to a substrate at distances of several inches.

Abstract: A backlight module including a circuit board, at least one first light emitting diode (LED) device, at least one second LED device, and a reflection device is provided. The first and second LED devices are disposed on a carrying surface of the circuit board and electrically connected to the circuit board. The brightness of the first LED device is greater than that of the second LED device. The reflection device is disposed on the circuit board and exposes the first and second LED devices. The reflection device has at least one first reflection region disposed around the first LED device and at least one second reflection region disposed around the second LED device. The reflection ratio of the first reflection region opposite to the light-emitting energy of the first LED device is smaller than that of the second reflection region opposite to the light-emitting energy of the second LED device.

Abstract: A fabricating method of a pixel structure is provided. First, a substrate with a plurality of pixel areas is provided. A common electrode is formed on the substrate to surround each pixel area. Then, a capacitance storage electrode is formed on the common electrode, and a first passivation layer is formed to cover the capacitance storage electrode and the common electrode. Following that, a scan line and a gate electrode are formed within each pixel area. Next, a gate insulation layer and a semiconductor layer are formed. A data line, a source, and a drain are formed within each pixel area. After that, a second passivation layer is formed on the substrate, and a contact window is formed in the second passivation layer above the drain. Moreover, a pixel electrode is formed within each pixel area, and the pixel electrode is electrically connected with the drain through the contact window.

Abstract: A method of manufacturing an imaging array includes providing a silicon tile having a first surface and a second, opposite surface. A buried dielectric layer is formed in the silicon tile between the first and second surfaces to define a bottom silicon layer between the first surface and the dielectric layer. A separation boundary is formed in the silicon tile between the second surface and the dielectric layer to define a top silicon layer between the dielectric layer and the separation boundary and a removable silicon layer between the separation boundary and the second surface. An oxide layer is formed on the first surface of the silicon tile and the silicon tile is bonded to a glass substrate at the oxide layer. The silicon tile is separated at the separation boundary to remove the removable silicon layer, exposing the top silicon layer. Semiconductive elements are formed using the exposed top silicon layer.

Abstract: The present invention provides an optical system having an array of light emitting semiconductor devices to performing an operation that have multiple characteristics associated with performing the operation. The array includes at least one detector located within the array to selectively monitor multiple characteristics of the light emitting semiconductor devices and is configured to generate a signal corresponding to the selected characteristic. A controller is configured to control the light emitting semiconductor devices in response to the signal from the at least one detector. At least one of the multiple characteristics may be concentrated at an area of the array and the at least one detector may be located within the array at the area of the array to selectively monitor characteristic that is concentrated at the area of the array.

Abstract: A surface mountable device having a circuit device and a base section. The circuit device includes top and bottom layers having a top contact and a bottom contact, respectively. The base section includes a substrate having a top base surface and a bottom base surface. The top base surface includes a top electrode bonded to the bottom contact, and the bottom base surface includes first and second bottom electrodes that are electrically isolated from one another. The top electrode is connected to the first bottom electrode, and the second bottom electrode is connected to the top contact by a vertical conductor. An insulating layer is bonded to a surface of the circuit device and covers a portion of a vertical surface of the bottom layer. The vertical conductor includes a layer of metal bonded to the insulating layer.