Abstract: Disclosed is a semiconductor light emitting device. The semiconductor light emitting device includes a light emitting structure including a plurality of compound semiconductor layers including a first conductive semiconductor layer, an active layer and a second conductive semiconductor layer; an electrode layer on the plurality of compound semiconductor layers; and a channel layer including protrusion and formed along a peripheral portion of an upper surface of the plurality of compound semiconductor layers.

Abstract: Provided are a light emitting device, a light emitting device package, and a lighting system. The light emitting device (LED) comprises an LED chip, a barrier over the LED chip, and an encapsulating material containing a phosphor, wherein the encapsulating material is disposed inside the barrier over the LED chip.

Abstract: A light emitting diode that when encapsulated within an overmolded hemispherical lens has a packaging factor less than 1.2.

Abstract: There are provided an optical semiconductor sealing curable composition that provides a cured material having excellent transparency, and an optical semiconductor apparatus having an optical semiconductor device sealed using the cured material obtained by curing the optical semiconductor sealing curable composition. There is provided an optical semiconductor sealing curable composition containing: (A) a linear polyfluoro compound; (B) cyclic organosiloxane having an SiH group and a fluorine-containing organic group; (C) a platinum group metal catalyst; (D) cyclic organosiloxane having an SiH group, fluorine-containing organic group, and an epoxy group; and (E) cyclic organosiloxane having an SiH group, a fluorine-containing organic group, and a cyclic carboxylic acid anhydride residue.

Abstract: A light emitting layer including a plurality of light emitting particles embedded within a host matrix material. Each of said light emitting particles includes a population of semiconductor nanoparticles embedded within a polymeric encapsulation medium. A method of fabricating a light emitting layer comprising a plurality of light emitting particles embedded within a host matrix material, each of said light emitting particles comprising a population of semiconductor nanoparticles embedded within a polymeric encapsulation medium. The method comprises providing a dispersion containing said light emitting particles, depositing said dispersion to form a film, and processing said film to produce said light emitting layer.

Abstract: A chip package structure including a carrier, a chip and a molding compound is provided. The chip is disposed on the carrier. The molding compound encapsulates a portion of the carrier and the chip. The top surface of the molding compound has a pin one dot and a pin gate contact. The pin one dot is located at a first corner on the top surface. The pin gate contact is located at a second corner except the first corner. The invention further provides a chip package mold chase and a chip package process using to form the chip package structure.

Abstract: A multichip package structure includes a substrate unit, a light-emitting unit, a current-limiting unit, a frame unit and a package unit. The substrate unit includes a first chip-placing region and a second chip-placing region. The light-emitting unit includes a plurality of light-emitting chips electrically connected to the first chip-placing region. The current-limiting unit includes at least one current-limiting chip electrically connected to the second chip-placing region and the light-emitting unit. The frame unit includes a first annular colloid frame surrounding the light-emitting chips and a second annular colloid frame surrounding the current-limiting chip. The package unit includes a first package colloid body surrounded by the first annular colloid frame to cover the light-emitting chips and a second package colloid body surrounded by the second annular colloid frame to cover the current-limiting chip.

Abstract: A method of manufacture of an integrated circuit packaging system includes: providing a sacrificial carrier assembly having a stack interconnector thereover; mounting an integrated circuit having a connector over the sacrificial carrier assembly with the connector over the stack interconnector; dispensing an underfill material between the sacrificial carrier assembly and the integrated circuit with the underfill material substantially free of a void; encapsulating the integrated circuit over the sacrificial carrier assembly and the underfill material; exposing the stack interconnector by removing the sacrificial carrier assembly; and forming a base array over the underfill material and the stack interconnector.

Abstract: A semiconductor light-emitting device includes a semiconductor light-emitting element, and a sealing material sealing the semiconductor light-emitting element. The sealing material includes a phosphor which includes a matrix including a glass and a luminescence center included in the matrix. A refractive index of the matrix is more in a far side of the matrix than the refractive index of the matrix in a near side of the matrix, the far side being located farther from the semiconductor light-emitting element than the near side. The refractive index of the matrix is the same as a refractive index of the semiconductor light-emitting element.

Abstract: The disclosure provides methods and materials for efficiently encapsulating electronic devices such as organic electroluminescent devices. The disclosure also provides electronic devices prepared by such methods. In one embodiment, for example, there is provided a method for preparing an electroluminescent device comprising forming a groove in a substrate and/or forming a groove in an encapsulation layer, depositing a desiccant in the groove or grooves, and bonding the substrate to the encapsulation layer.

Abstract: A method for manufacturing a light emitting diode is disclosed. Firstly, two leads each including a plateau are provided. A blocking layer is then formed on each plateau. A base is molded on the leads to embed the two leads therein, wherein the two blocking layer are exposed from the base. The blocking layers are removed from the plateaus so that the two plateaus are exposed. A light emitting chip is bonded on one plateau with a wire connecting the chip with the other plateau. Finally, an encapsulant is formed on the base to seal the chip and the wire.

Abstract: A method for producing a silicone resin sheet includes the steps of forming a first coating layer by applying a first silicone resin composition which contains a first organopolysiloxane and a second organopolysiloxane; forming a precursor layer from the first coating layer by reacting the first organopolysiloxane with the second organopolysiloxane so as to have a conversion ratio of 5 to 40%; and forming a second layer on at least one surface in a thickness direction of the precursor layer by applying a second silicone resin composition which contains a third organopolysiloxane, a fourth organopolysiloxane, a hydrosilylation catalyst, and a curing retardant containing tetraalkylammonium hydroxide.

Abstract: Apparatus for accurately picking and placing one or more optoelectronic devices for vacuum lamination of materials in a way that minimizes stress to the materials.

Abstract: This invention relates to structures for mounting LEDs, said structures being suitable for use in the manufacture of light guide devices. This invention also relates to light guide devices comprising said structures and methods of manufacture of the aforementioned. The light guide devices are suitable for use in a range of applications, particularly in connection with the backlighting of displays, for example, liquid crystal displays.

Abstract: There is provided a sealing material including a composite resin (A) including a polysiloxane segment (a1) having a structural unit represented by general formula (1) and/or general formula (2) and a silanol group and/or a hydrolyzable silyl group and a vinyl-based polymer segment (a2) having an alcoholic hydroxyl group, the vinyl-based polymer segment (a2) being bonded to the polysiloxane segment (a1) through a bond represented by general formula (3), and a polyisocyanate (B), wherein the content of the polysiloxane segment (a1) is 10% to 50% by weight relative to the total solid content of a curable resin composition, and the content of the polyisocyanate (B) is 5% to 50% by weight relative to the total solid content of the curable resin composition. There are also provided a solar cell module and a light-emitting diode that each use the sealing material.

Abstract: An optoelectronic device (e.g., LED) comprising one or more conformal surface electrical contacts conforming to surfaces of the device; and a high refractive index glass partially or totally encapsulating the device and the conformal surface electrical contacts, wherein traditional wire bonds and/or bond pads are not used and the glass is a primary encapsulant for the device.

Abstract: A light emitting device includes a light emitting diode chip, and a first lead terminal in which a bottom portion including a mounting region for the light emitting diode chip is formed, and a side wall continuing to the bottom portion and having an inner surface serving as a reflecting surface for light emitted from the light emitting diode chip is continuously formed. Further, the light emitting device includes a second lead terminal provided to be spaced from the first lead terminal. Furthermore, the light emitting device includes a resin portion which supports the first lead terminal and the second lead terminal, and in which a cavity exposing a portion of the second lead terminal and the mounting region in the first lead terminal is formed.

Abstract: Provided is a flat panel display apparatus including a sealant which has a small effective width and is able to effectively attach a substrate and an encapsulation substrate. The flat panel display apparatus includes the substrate, a display unit disposed on the substrate, the encapsulation substrate disposed facing the substrate so that the display unit is disposed on inner side of the encapsulation substrate, and the sealant attaching the substrate and the encapsulation substrate, wherein an end surface of the sealant facing the substrate contacts a silicon oxide layer disposed on the substrate.

Abstract: The present invention relates to a light emitting device, comprising: a LED die (10) having a first surface (12), a second surface (14) and at least one side facet (16) connecting the first and the second surface (12, 14). Further, the LED die comprises a light polarizing layer (20), a light blocking layer (30), and a light reflecting layer (40). The light polarizing layer (20) is arranged on the first surface (12), the light blocking layer (30) is arranged on the at least one side facet (16), and the light reflecting layer (40) is arranged on the second surface (14) of the LED die.

Abstract: According to one embodiment, a method for manufacturing a semiconductor light emitting device includes: preparing a metal plate including first and second frames, the first frames being disposed alternately with the second frames to be apart from the second frames, a light emitting element being affixed to each of the first frames and connected via a metal wire to an adjacent second frame; forming a first resin on a first major surface of the metal plate to cover the first and second frames, and the light emitting elements; making a trench from a second major surface side; and filling a second resin into an interior of the trench from the first major surface side. The method further includes forming the resin packages by dividing the second resin along the trench, an outer edge of the first resin being covered with the second resin.

Abstract: A method for manufacturing LEDs is disclosed. A base is firstly provided. The base includes a plate, sidewalls formed on the plate and pairs of leads connected to the plate. The sidewalls enclose cavities above the plate. Light emitting chips are fixed in the cavities and electrically connected to the leads, respectively. Encapsulants are formed in the cavities to seal the light emitting chips. Each encapsulant has a convex top face protruding beyond top faces of the sidewalls. The convex top faces of the encapsulants are grinded to become flat. Finally, the base is cut to form individual LEDs.

Abstract: A light emitting module includes a carrier unit, a substrate unit, and a light emitting unit. The carrier unit includes at least one carrier body, and the carrier body has a mounting portion. The substrate unit includes at least one bendable substrate. The bendable substrate includes a plurality of substrate portions and a plurality of bending portions, the substrate portions are disposed on the mounting portion of the carrier body, and each bending portion is disposed between every two corresponding substrate portions. The light emitting unit includes a plurality of light emitting groups respectively disposed on the substrate portions, and each light emitting group includes at least one light emitting element electrically connected to each corresponding substrate portion. Because the substrate portions can be disposed on different planes after bending the substrate portions, thus light sources respectively generated by the light emitting elements can be projected toward different directions.

Abstract: A package for a light source, a semiconductor device, and methods of manufacturing the same are disclosed. In particular, a Light Emitting Diode (LED) dice is attached to a bonding pad of the light source package by two discrete types of different adhesives. One of the adhesives may be curable under exposure to Ultraviolet (UV) light and the other adhesive may be cured under thermal radiation, but is stable when exposed to UV light.

Abstract: An organic light emitting diode display includes: a base film made of plastic; a thin film transistor and an organic light emitting diode formed on the base film; and a carbon nanotube thin film disposed among the base film, the thin film transistor, and the organic light emitting diode.

Abstract: This invention provides lenses having a pendant shape profile and their applications and forming methods. In an embodiment, the lenses are used to encapsulate one or more light-emitting diode chips so as to increase the light extraction efficiency.

Abstract: An object of the present invention is to provide a package from which a metal wiring and the like are difficult to be detached even when heat is generated from a semiconductor light-emitting element. This object is achieved with a package for a semiconductor light-emitting device comprising at least a molded resin containing (A) a SiH-containing polyorganosiloxane and (B) a filler, wherein an amount of SiH existing in the molded resin, after a heat treatment thereof at 200° C. for 10 minutes, is 20 to 65 ?mol/g.

Abstract: An optical semiconductor device in which an optical semiconductor element connected to a silver-plated copper lead frame is sealed with an addition curing silicone resin composition, the addition curing silicone resin composition having (A) organopolysiloxane that contains an aryl group and an alkenyl group and does not contain an epoxy group; (B) organohydrogenpolysiloxane that has at least two hydrosilyl groups per molecule and an aryl group, the organohydrogenpolysiloxane that contains 30 mol % or more of an HR2SiO0.5 unit in a constituent unit having an amount that a molar ratio of the hydrosilyl group in the component (B) with respect to the alkenyl group in the component (A) is 0.70 to 1.00; and (C) a hydrosilylation catalyst having a catalytic amount.

Abstract: An optical device for a semiconductor based lamp includes a base and a semiconductor based light-emitting device mounted on the base. A transparent body encapsulates the semiconductor based light-emitting device. A reflective surface is in contact with the transparent body and covers a predetermined region on a top of the transparent body. The reflective surface has an opening. At least a portion of the transparent body protrudes through the opening in the reflective surface. Light emitted from the semiconductor based light-emitting device transmits upwardly through the opening in the reflective surface.

Abstract: A light emitting diode is disclosed. The diode includes a package support and a semiconductor chip on the package support, with the chip including an active region that emits light in the visible portion of the spectrum. Metal contacts are in electrical communication with the chip on the package. A substantially transparent encapsulant covers the chip in the package. A phosphor in the encapsulant emits a frequency in the visible spectrum different from the frequency emitted by the chip and in response to the wavelength emitted by the chip. A display element is also disclosed that combines the light emitting diode and a planar display element. The combination includes a substantially planar display element with the light emitting diode positioned on the perimeter of the display element and with the package support directing the output of the diode substantially parallel to the plane of the display element.

Abstract: An organic light emitting apparatus and a method of manufacturing the organic light emitting apparatus. According to the organic light emitting apparatus and the method of manufacturing the organic light emitting apparatus, the characteristics of a barrier layer are maintained and a stress of a substrate is reduced, even at a high temperature, thereby increasing the manufacturing stability of the organic light emitting apparatus.

Abstract: Disclosed are: a semiconductor light-emitting element which fulfills all of high migration preventing properties, high permeability and low film production cost; a protective film for a semiconductor light-emitting element; and a process for producing the protective film. In a semiconductor light-emitting element comprising multiple semiconductor layers (12-14) formed on a substrate (11) and electrode portions (15, 16) and electrode portions (17, 18) which act as electrodes for the multiple semiconductor layers (12-14), an SiN film (31) having a thickness of 35 nm or more and comprising silicon nitride covers the surrounds of the multiple semiconductor layers (12-14), the electrode portions (15, 16) and the electrode portions (17, 18) and an SiO film (32) having a higher thickness than that of the SiN film (31) and comprising silicon oxide covers the surround of the SiN film (31), as protective films for the semiconductor light-emitting element.

Abstract: A backlight unit (BLU) is disclosed. The BLU may include a light emitting diode (LED) module including at least one LED chip mounted on a substrate in a chip-on-board (COB) type, and a light guide panel including an incidence surface configured to receive light emitted from an emission surface of the LED chip and to include at least one insertion recess disposed corresponding to the LED chip, such that the LED chip is bonded to the LED module to be inserted in the insertion recess.

Abstract: A device for resin coating is used for producing an LED package including an LED element covered with resin containing phosphor. In a state in which a trial coating material 43 is located by a clamp unit 63, a trial coating of resin applied to the trial coating material 43 is irradiated with excitation light and light emitted from the phosphor contained in the resin is measured by an emission characteristic measuring unit 39. A deviation of the measurement result of the emission characteristic measuring unit from a prescribed emission characteristic is determined, and then a proper amount of resin to be applied to the LED element is derived for actual production based on the deviation.

Abstract: An LED unit includes a housing accommodating a wiring substrate mounted an LED, the housing including a light projecting portion for projecting light emitted from the LED, and wiring lines electrically connected to the wiring substrate. First and second lead-out portions, for leading out the wiring lines, are respectively provided at opposite end portions of the housing along a specified direction when seen in a plan view. First and second attachment portions for attaching the housing are respectively provided in the opposite end portions of the housing along the specified direction. The first and second lead-out portions are arranged at the opposite sides from each other with respect to a centerline of the housing extending along the specified direction. The first and second attachment portions are respectively arranged at the opposite sides from the first and second lead-out portions with respect to the centerline of the housing.

Abstract: A method of packaging a light emitting diode comprising: providing a flexible substrate with a heat-conducting layer, an insulating layer covering on a surface of the heat-conducting layer and an electrically conductive layer positioned on the insulating layer; etching the conductive layer to form a gap in the conductive layer and expose a part of the insulating layer, the conductive layer being separated by the gap into a first electrode and a second electrode isolated from each other; stamping the flexible substrate with a mold at the position of the gap to form a recess in the flexible substrate; positioning a light emitting element on the conductive layer and electrically connecting the light emitting element to the conductive layer; and forming an encapsulation to cover the light emitting element.

Abstract: A light-emitting device in which deterioration of an organic EL element due to impurities such as moisture or oxygen is suppressed is provided. The light-emitting device includes a first substrate and a second substrate facing each other, a light-emitting element provided over the first substrate, a first sealant provided so as to surround the light-emitting element, and a second sealant provided so as to surround the first sealant. One of the first sealant and the second sealant is a glass layer and the other is a resin layer. A dry agent is provided in a first space surrounded by the first sealant, the second sealant, the first substrate, and the second substrate, or in the resin layer. The light-emitting element is included in a second space surrounded by the first sealant, the first substrate, and the second substrate.

Abstract: In an embodiment, the invention provides a light source comprising a plurality of light-emitting semiconductor chips, a plurality of electrical leads and an encapsulant. The plurality of electrical leads is connected to the plurality of light-emitting semiconductor chips. The encapsulant completely encases the plurality of semiconductor chips. The encapsulant partially encases the plurality of electrical leads.

Abstract: A light emitting device includes a light emitting element, a base, and a transparent layer. The base has an upper side portion including a first portion and a second portion. The first portion includes a mounting region of the light emitting element, and has a first porosity. The second portion surrounds the first portion, includes a plurality of transparent particles, and has a second porosity larger than the first porosity. The light transmitting layer encapsulates the light emitting element, and is attached to the first portion in a state where the transparent layer is apart from the second portion.

Abstract: An optoelectronic component is specified that emits a useful radiation. It comprises a housing having a housing base body with a housing cavity, and a light-emitting diode chip arranged in the housing cavity. At least one base body material of the housing base body has radiation-absorbing particles admixed in a targeted manner to reduce its reflectivity. According to another embodiment of the component, the housing additionally or alternatively has a housing material transmissive for the useful radiation that has radiation-absorbing particles admixed in a targeted manner to reduce its reflectivity. In addition, a method for manufacturing such a component is specified.

Abstract: A light emitting diode (LED) package including a carrier, at least one LED chip, and a light guide element is provided. The LED chip is disposed on the carrier. The light guide element including a light transmissive body, a light integration part, a reflective film, and a support part is disposed on the carrier and above the LED chip. The light integration part connected to the light transmissive body and disposed between the light transmissive body and the LED chip has a light incident surface facing the LED chip and at least one side. The side connects the light transmissive body and the light incident surface. The reflective film is disposed on the side. The support part leaning on the carrier is connected to the light transmissive body and surrounds the light integration part. The light transmissive body, the light integration part, and the support part are integrally formed.

Abstract: A light-emitting diode structure is provided. The light-emitting diode structure includes a light-emitting diode chip, a lead frame for electrically connecting and supporting the light-emitting diode chip, and a lens covering the light-emitting diode chip and to partially cover the lead frame. A recess disposed on the upper portion of the lens has a ladder-like inner wall formed of an upper inclined wall portion, a lower inclined wall portion, and a connecting wall portion connected to the upper and lower inclined wall portions. The slope of the upper inclined wall portion is greater than that of the lower inclined wall portion, and the slope of the connecting wall portion is greater than the upper and lower inclined wall portions.

Abstract: A LED package structure includes a substrate, a LED chip and a colloid. The substrate includes a first surface and a second surface. An opening is shaped from the first surface toward the second surface. A phosphor layer is coated on the bottom surface with two opposite parts of the bottom surface respectively neighboring to two opposite side walls of the opening exposed. A metal layer is coated on the two exposed opposite parts of the bottom surface, the two opposite side walls and the first surface. The LED chip is received in the opening and configured on the phosphor layer. The LED chip includes a pair of conductive pads electrically connecting to the metal layer. The colloid is filled between the LED chip and the metal layer to attach the substrate to the LED chip.

Abstract: Disclosed are: a semiconductor light-emitting element that fulfills all of having high migration prevention, high transmittance, and low film-production cost; the protective film of the semiconductor light-emitting element; and a method for fabricating same. To this end, in the semiconductor light-emitting element-which has: a plurality of semiconductor layers (12-14) formed on a substrate (11); and electrode sections (15, 16) and other electrode sections (17, 18) that are the electrodes of the plurality of semiconductor layers (12-14)—as the protective film thereof, the surroundings of the plurality of semiconductor layers (12-14), the electrode sections (15, 16), and the other electrode sections (17, 18) are covered by a SiN film (21) comprising silicon nitride of which the quantity of Si—H bonds in the film is less than 1.0×1021 bonds/cm3.

Abstract: A display device is provided with a reinforced power line. The display device includes a common power line. A light emission layer is interposed between a first and a second electrode. A passivation layer is formed over the second electrode and has a stepped shape. An auxiliary metal layer is coupled to a common power line. At least a portion of the auxiliary metal layer is formed over the passivation layer and has a shape that follows the stepped shape of the passivation layer.

Abstract: A light emitting device is provided, including a resin which can be manufactured according to a simple process and deliver a desired scattering property. The light emitting device is manufactured according to a step for mixing two or more types of immiscible liquid materials to obtain a composition containing at least two types of materials phase-separated in a sea-island structure, and a step for arranging the composition in proximity to an LED chip, curing the composition with the sea-island structure being maintained, thereby forming an encapsulation resin. Accordingly, it is possible to form an island region which serves as a scattering center, according to a simple step of mixing materials.

Abstract: A semiconductor light-emitting device and a method for manufacturing the same can include a wavelength converting layer encapsulating at least one semiconductor light-emitting chip to emit various colored lights including white light. The semiconductor light-emitting device can include a base board with the chip mounted thereon, a frame located on the base board, a transparent plate located on the wavelength converting layer, a reflective material layer disposed between the frame and both side surfaces of the wavelength converting layer and the transparent plate, and a light-absorbing layer located on the reflective material layer. The semiconductor light-emitting device can be configured to improve light-emitting efficiency and a contrast between a light-emitting and non-light-emitting surfaces by using the transparent material and light-absorbing layer.

Abstract: A sensor device and method. One embodiment provides a first semiconductor chip having a sensing region. A porous structure element is attached to the first semiconductor chip. A first region of the porous structure element faces the sensing region of the first semiconductor chip. An encapsulation material partially encapsulates the first semiconductor chip and the porous structure element.

Abstract: A composition for encapsulating optical semiconductors. The composition comprises (A) a mixture of a linear alkenyl group-containing organopolysiloxane and an alkenyl group-containing organopolysiloxane resin containing at least one SiO2 unit, (B) a mixture of a linear organohydrogenpolysiloxane containing two or more SiH groups and a branched organohydrogenpolysiloxane that is liquid at 25° C., (C) a platinum group metal catalyst, and (D) a linear or cyclic organopolysiloxane having at least two functional groups selected from the group consisting of alkenyl groups, alkoxysilyl groups and epoxy groups bonded to silicon atoms. A cured product of the composition exhibits dramatically reduced surface tack, and therefore using the composition for encapsulating optical semiconductor elements improves the optical semiconductor device yield.

Abstract: The present invention relates to a silver anti-tarnish agent having, as an effective component, a zinc salt and/or a zinc complex, preferably at least one kind selected from the group consisting of a carboxylic acid zinc salt having a carbon atom number of 3 to 20, a phosphoric acid zinc salt, a phosphate ester zinc salt and a carbonyl compound zinc complex; a silver anti-tarnish method for preventing tarnish of a silver part by applying said silver anti-tarnish agent to the silver part. According to the present invention, tarnish of a silver part such as a silver-plated part due to a sulfur-based gas can be prevented. The present invention is useful particularly as a silver anti-tarnish agent for a light-emitting diode and allows preventing tarnish of a silver part of a light-emitting diode and reduction in illuminance by applying the silver anti-tarnish agent of the present invention to a silver part such as a silver-plated part of a light-emitting diode for covering the silver part.

Abstract: An LED module includes a first dielectric layer, and a first patterned conductive layer having first, second, and third die-bonding pads. Each die-bonding pad includes a pad body having a die-bonding area, and an extension extended from the pad body. The extension of the first die-bonding pad extends in proximity to the die-bonding area of the second die-bonding pad. The extension of the second die-bonding pad extends in proximity to the die-bonding area of the third die-bonding cad. A second dielectric layer disposed on the first patterned conductive layer includes three dielectric members corresponding respectively to the die-bonding pads of the first patterned conductive layer. Each dielectric member includes a chip-receiving hole exposing the die-bonding area of a respective die-bonding pad for attachment of an LED chip thereto, and a wire-passage hole spaced apart from the chip-receiving hole to expose partially the first patterned conductive layer for bonding a wire.