Abstract: A micro light-emitting diode structure is provided. The micro light-emitting diode structure includes an epitaxial layer. The micro light-emitting diode structure also includes a reflecting layer disposed on the epitaxial layer. The micro light-emitting diode structure further includes a patterned electrode layer disposed between the epitaxial layer and the reflecting layer. The patterned electrode layer is divided into a plurality of patterned electrode segments, and the patterned electrode segments are separated from each other. Moreover, the micro light-emitting diode structure includes a first-type electrode and a second-type electrode disposed on the reflecting layer and electrically connected to the epitaxial layer.

Abstract: Various aspects of the present disclosure provide a semiconductor device, for example comprising a finger print sensor, and a method for manufacturing thereof. Various aspects of the present disclosure may, for example, provide an ultra-slim finger print sensor having a thickness of 500 ?m or less that does not include a separate printed circuit board (PCB), and a method for manufacturing thereof.

Abstract: An optoelectronic semiconductor component may include a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type, a first contact element for making contact with the first semiconductor layer, and a second contact element for making contact with the second semiconductor layer. The first semiconductor layer may be arranged on a side facing away from a first main surface of the second semiconductor layer. Electromagnetic radiation may be output via the first main surface of the second semiconductor layer. The first contact element and the second contact element may each be arranged on a side of a first main surface of the first semiconductor layer. The first contact element may have a first section extending in a first direction, and a second section connected to the first section and extending in a second direction different from the first direction.

Abstract: In an embodiment, the optoelectronic semiconductor component (1) comprises a semiconductor layer sequence (2) with an active zone (22) for generating a radiation. On an bottom side (20) of the semiconductor layer sequence (2) there is an electrically insulating separation layer (3) with several openings (32). An adhesion-promoting layer (4) is located next to the openings (32) on a side of the separation layer (3) facing away from the semiconductor layer sequence (2). A continuous metallization layer (5) is located on a side of the adhesion-promoting layer (4) facing away from the semiconductor layer sequence (2). The semiconductor layer sequence (2) is electrically contacted in the openings (32) directly by the metallization layer (5). The metallization layer (5) and the openings (32) are spaced from the active zone (22) in the direction perpendicular to the separation layer (3).

Abstract: A semiconductor device includes: a package including: a heat dissipating body comprising a metal, an insulting part surrounding the heat dissipating body, one or more semiconductor laser elements disposed on the heat dissipating body, at least one outer metal layer that is located on a lower surface of the insulting part and is spaced from a lower surface of the heat dissipating body; a mounting substrate including: at least one first metal pattern located at an upper surface of the mounting substrate, and a second metal pattern located at the upper surface of the mounting substrate; at least one first bonding member located between the at least one outer metal layer and the first metal pattern; and a second bonding member located between the lower surface of the heat dissipating body and the second metal pattern, wherein the second bonding member comprises a metal material.

Abstract: A protective film includes a transparent substrate layer and a transparent hardened layer covering a surface of the transparent substrate layer. The transparent hardened layer includes a first region covering a middle portion of the transparent substrate layer and a second region covering an edge of the transparent substrate layer, where hardness of the first region is greater than hardness of the second region. The transparent hardened layer includes the first region and the second region.

Abstract: In an embodiment a method includes providing a carrier with an optoelectronic semiconductor chip-component arranged on a top side of the carrier, arranging a first potting material on the top side of the carrier, arranging a second potting material on the first potting material, wherein the second potting material comprises a higher density than the first potting material, wherein a top side of the optoelectronic semiconductor chip-component is covered by neither the first potting material nor the second potting material and allowing a force to act on the first potting material and the second potting material such that the second potting material migrates in a direction toward the top side of the carrier.

Abstract: A manufacturing method of a light emitting diode (LED) package structure includes the following steps. A carrier is provided. A redistribution layer is formed on the carrier. A plurality of active devices are formed on the carrier. A plurality of LEDs are transferred on the redistribution layer. The LEDs and the active devices are respectively electrically connected to the redistribution layer. The active devices are adapted to drive the LEDs, respectively. A molding compound is formed on the redistribution layer to encapsulate the LEDs. The carrier is removed to expose a bottom surface of the redistribution layer.

Abstract: Discontinuous bonds for semiconductor devices are disclosed herein. A device in accordance with a particular embodiment includes a first substrate and a second substrate, with at least one of the first substrate and the second substrate having a plurality of solid-state transducers. The second substrate can include a plurality of projections and a plurality of intermediate regions and can be bonded to the first substrate with a discontinuous bond. Individual solid-state transducers can be disposed at least partially within corresponding intermediate regions and the discontinuous bond can include bonding material bonding the individual solid-state transducers to blind ends of corresponding intermediate regions. Associated methods and systems of discontinuous bonds for semiconductor devices are disclosed herein.

Abstract: A display device of the present disclosure includes: an organic EL layer deposited on a circuit unit formed on a substrate via an insulating film; a cathode electrode deposited on the organic EL layer; a groove formed along a direction of arrangement of pixels between the pixels in the insulating film; and a contact electrode that is provided at a bottom of the groove and receives a predetermined potential. Moreover, the cathode electrode is electrically connected to the contact electrode in the groove.

Abstract: A semiconductor light-emitting device includes a substrate, a semiconductor light-emitting element, and a resin member. The substrate includes a base member and a conductive part. The semiconductor light-emitting element is supported on the substrate. The resin member covers at least a portion of the substrate. The base member has a front surface and a back surface that face opposite to each other in a thickness direction. The conductive part includes a front portion formed on the front surface. The semiconductor light-emitting element is mounted on the front portion. The resin member includes a frame-shaped portion surrounding the semiconductor light-emitting element as viewed in the thickness direction, and a front-surface covering portion connected to the frame-shaped portion and covering a portion of the front surface of the base member that is exposed from the front portion.

Abstract: A method of manufacturing a semiconductor structure includes following operations. A first die is provided. A first molding is formed to encapsulate the first die. A second die is disposed over the first molding. A mold chase is disposed over the second die and the first molding. The mold chase includes a protrusion protruded from the mold chase towards the first molding. A molding material is disposed between the mold chase and the first molding. A second molding is formed to surround the second die. The second die is at least partially covered by the second molding. The disposing of the mold chase includes surrounding the protrusion of the mold chase by the molding material.

Abstract: A light emitting device includes a light emitting diode chip, a light transmitting member, a white barrier member, and a conductive adhesive member. The light emitting diode chip has a bump pad formed on the lower surface thereof. The light transmitting member covers the side surfaces and the upper surface of the light emitting diode chip, and the upper surface of the light transmitting member has a rectangular shape having long sides and short sides. The conductive adhesive member is formed to extend through the white barrier member from the bottom of the light emitting diode chip. The upper surface of the conductive adhesive member is connected to the bump pad of the light emitting diode chip, and the lower surface of the conductive adhesive member is exposed at the lower surface of the white barrier member.

Abstract: In some examples, an article comprises a semiconductor including at least one integrated circuit and an inorganic semiconductor layer bonded to a first surface of the semiconductor. The inorganic semiconductor layer comprises a ?LED array, and the first surface of the semiconductor extends beyond a first edge of the inorganic semiconductor layer. The first edge of the inorganic semiconductor layer is oriented substantially perpendicular to the first surface of the semiconductor.

Abstract: A manufacturing method of a light emitting diode (LED) package structure includes the following steps. A carrier is provided. A redistribution layer is formed on the carrier. A plurality of active devices are formed on the carrier. A plurality of LEDs are transferred on the redistribution layer. The LEDs and the active devices are respectively electrically connected to the redistribution layer. The active devices are adapted to drive the LEDs, respectively. A molding compound is formed on the redistribution layer to encapsulate the LEDs. The carrier is removed to expose a bottom surface of the redistribution layer.

Abstract: An LED wafer includes LED dies on an LED substrate. The LED wafer and a carrier wafer are joined. The LED wafer that is joined to the carrier wafer is shaped. Wavelength conversion material is applied to the LED wafer that is shaped. Singulation is performed to provide LED dies that are joined to a carrier die. The singulated devices may be mounted in an LED fixture to provide high light output per unit area.

Abstract: A microLED based optical chip-to-chip interconnect may optically couple chips in a variety of ways. The microLEDs may be positioned within a waveguide, and the interconnects may be arranged as direct connections, in bus topologies, or as repeaters.

Abstract: A display apparatus including a substrate, a first sub-pixel, a second sub-pixel, and a third sub-pixel disposed on the substrate and configured to emit red light, green light, and blue light, respectively, partition walls disposed between the first sub-pixel, the second sub-pixel, and the third sub-pixel, and configured to not transmit light, in which the first sub-pixel, the second sub-pixel, and the third sub-pixel include a first light emitting cell, a second light emitting cell, and a third light emitting cell, respectively, and a height of each of the first, second, and third light emitting cells is lower than a height of the partition walls, and a difference between the height of the partition walls and the height of each of the first, second, and third light emitting cells is less than 100 ?m.

Abstract: An embodiment of present invention discloses a light-emitting device which includes a first light-emitting area, a second light-emitting area, and a third light-emitting area. The first light-emitting area emits a red light and includes a first light-emitting unit. The second light-emitting area emits a blue light and includes a second light-emitting unit. The third light-emitting area emits a green light and includes a third light-emitting unit. The first light-emitting area is larger than the second light-emitting area and larger than the third light-emitting area. Each of the first light-emitting unit, the second light-emitting unit, and the third light-emitting unit has a width of less than 100 ?m and a length of less than 100 ?m.

Abstract: A LED filament including a linear array of LEDs arranged on a carrier substrate, wherein the linear array is divided into two separate longitudinal sections, a first longitudinal section including only LEDs configured to emit white light, and a second longitudinal section including only LEDs configured to emit color controllable light. The present invention suggests confining the color LEDs to the second longitudinal section of the array, so that the first longitudinal section of the array is capable of emitting homogenous white light of a color temperature in the range of the LEDs in that section.

Abstract: A light emitting stacked structure including a first epitaxial stack including a first n-type semiconductor layer, a first p-type semiconductor layer, and a first active layer disposed therebetween, a second epitaxial stack disposed on the first epitaxial stack and including a second n-type semiconductor layer, a second p-type semiconductor layer, and a second active layer disposed therebetween, a third epitaxial stack disposed on the second epitaxial layer and including a third n-type semiconductor layer, a third p-type semiconductor layer, and a third active layer disposed therebetween, and a shared electrode disposed between two adjacent epitaxial stacks facing each other, in which two semiconductor layers of the two adjacent epitaxial stacks with the shared electrode therebetween have a same polarity.

Abstract: Optoelectronic components, groups of optoelectronic components, and methods for producing a component or a plurality of optoelectronic components are provided. The method may include providing a growth substrate having a buffer layer arranged thereon. The buffer layer may be structured in such a way that it has a plurality of the openings which are spaced apart from one another in lateral directions. A plurality of semiconductor bodies may be formed in the openings, wherein in the areas of the openings, the buffer layer has subregions which are arranged in a vertical direction between the growth substrate and the semiconductor bodies. The growth substrate may be detached from the semiconductor bodies. The buffer layer may be removed at least in the areas of the subregions.

Abstract: An electronic device including a plurality of light-emitting units, a driving circuit, and a controlling circuit is provided. The driving circuit is configured to drive at least one of the light-emitting units. The controlling circuit is configured to control the driving circuit. The plurality of light-emitting units, the driving circuit, and the controlling circuit are respectively disposed on different substrates.

Abstract: A lighting unit which comprises a lens arrangement over a LED module is provided. The lens arrangement comprises a plate having at least one lens integrally formed by the plate for positioning over a substrate of the LED module, and at least one magnifying component integrally formed by the plate. The LED module substrate has an inspection region which is inspected through the magnifying component, so as to enable determination of a spacing between the lens arrangement and the substrate by viewing an image of the marker arrangement created by the at least one magnifying component at a given viewing location. A luminaire is also provided, which luminaire comprises a housing and the lighting unit mounted within the housing, wherein the lens arrangement (10) forms the light output window of the luminaire.

Abstract: An upper surface of a lateral wall portion of a substrate includes a first upper surface portion exposed from a light-transmissive member in a first region, a second upper surface portion exposed from the light-transmissive member in a second region, and a third upper surface portion located between the first upper surface portion and the second upper surface portion in a second direction, and an upper surface of an outer peripheral portion of the light-transmissive member includes a first outer peripheral surface portion located in the first region. An area of the first upper surface portion of the lateral wall portion is greater than an area of the first outer peripheral surface portion of the outer peripheral portion of the light-transmissive member. A bonding member is disposed between the third upper surface portion of the lateral wall portion and the first lower surface portion of the light-transmissive member.

Abstract: An optoelectronic component and a manufacturing method are disclosed. In an embodiment an optoelectronic component includes an optoelectronic semiconductor chip, a housing having a top side and two protrusions on the top side projecting beyond the top side and a transparent structure, wherein the optoelectronic semiconductor chip is arranged between the protrusions, and wherein the transparent structure is at least partially arranged on the top side of the housing between the protrusions and partially above the optoelectronic semiconductor chip.

Abstract: A surface-emitting light source includes: light-emitting modules; a wiring substrate including a base member having a surface at a light-emitting modules side and a rear surface opposite to that, a wiring layer on the rear surface of the base member and including wiring pads being portions of the wiring layer, electrically-conductive members each supplied across corresponding two or more of a plurality of vias in each of the wiring pads, and a covering layer covering the wiring layer and defining openings in each of which a portion of a corresponding one of the wiring pads is exposed; and an adhesive layer between the light-emitting modules and the wiring substrate. Each light-emitting module has an array of light emitting devices. The covering layer defines the openings at locations corresponding to the wiring pads with an area dimension smaller than respective area dimensions of the wiring pads.

Abstract: An electronic device includes: a flexible substrate including a through hole; a connecting element disposed in the through hole; a semiconductor disposed on the flexible substrate; and a first conductive element disposed under the flexible substrate, wherein the first conductive element electrically connects to the semiconductor through the connecting element, wherein a distance between the semiconductor and the connecting element ranges from 5 ?m to 500 ?m.

Abstract: A semiconductor device includes a substrate with an opening formed through the substrate. A first electronic component is disposed over the substrate outside a footprint of the first opening. A second electronic component is disposed over the substrate opposite the first electrical component. A third electronic component is disposed over the substrate adjacent to the first electronic component. The substrate is disposed in a mold including a second opening of the mold over a first side of the substrate. The mold contacts the substrate between the first electronic component and the third electronic component. An encapsulant is deposited into the second opening. The encapsulant flows through the first opening to cover a second side of the substrate. In some embodiments, a mold film is disposed in the mold, and an interconnect structure on the substrate is embedded in the mold film.

Abstract: A piezoelectric sensor includes: a lower substrate; a plurality of sensing transistors that are disposed on the lower substrate; a lower electrode that is disposed to cover the plurality of sensing transistors; a piezoelectric material layer that is disposed on the lower electrode; and an upper electrode that is disposed on the piezoelectric material layer. The piezoelectric material layer has a first thickness in a plurality of first areas in which the plurality of sensing transistors are disposed and has a second thickness which is greater than the first thickness in a second area in which the plurality of sensing transistors are not disposed. Accordingly, it is possible to further accurately and finely detect various types of biometric information.

Abstract: A portable electronic device and a customized image-capturing module thereof are provided. The customized image-capturing module includes a carrier substrate, an image-capturing chip, and a lens assembly. The carrier substrate includes a carrier body, a plurality of first conductive pads, and a plurality of second conductive pads. The image-capturing chip is disposed inside a concave space of the carrier body, and the image-capturing chip includes a plurality of conductive chip pads. The second conductive pads are exposed from a bottom side of the carrier body, the conductive chip pads are electrically connected to the second conductive pads through the first conductive pads, respectively, so that when the customized image-capturing module is partially disposed inside a receiving space and positioned between two electronic elements, the second conductive pads can be electrically connected to conductive substrate pads of a circuit substrate through soldering materials, respectively.

Abstract: A method of manufacturing a light-emitting device includes: providing a substrate having a first surface and a second surface opposite to the first surface; forming, on or above the first surface of the substrate, a semiconductor structure comprising a light-emitting layer; forming a crack inside the substrate, the crack reaching the first surface of the substrate; disposing a wavelength conversion layer on the second surface of the substrate; forming a first recess in the wavelength conversion layer by removing a first portion of the wavelength conversion layer, the first portion overlapping with the crack when viewed in a direction from the wavelength conversion layer toward the semiconductor structure, and leaving a second portion of the wavelength conversion layer between the first recess and the semiconductor structure; and cleaving the second portion along the crack.

Abstract: An object is to provide a technique capable of regulating a direction in which an adhesive agent used for bonding a base plate and a case is wetly widened. A semiconductor device includes a base plate and a case. The case is bonded to a peripheral edge part of the base plate via an adhesive agent. A dip which is an application position where the adhesive agent is applied and an inclined surface directed downward from the dip toward an outer peripheral side or an inclined surface directed downward from the dip toward an inner peripheral side are formed in the peripheral edge part of the base plate.

Abstract: Provided is a method of manufacturing a semiconductor having a double-sided substrate including preparing a first substrate on which a specific pattern is formed to enable electrical connection, preparing at least one semiconductor chip bonded to a metal post, bonding the at least one semiconductor chip to the first substrate, bonding a second substrate to the metal post, forming a package housing by packaging the first substrate and the second substrate to expose a lead frame, and forming terminal leads toward the outside of the package housing. Accordingly, the semiconductor chip and the metal post are previously joined to each other and are respectively bonded to the first substrate and the second substrate so that damage generated while bonding the semiconductor chip may be minimized and electrical properties and reliability of the semiconductor chip may be improved.

Abstract: A surface-emitting light source includes a plurality of light-emitting modules each including an array of a plurality of light sources and a wiring board disposed on an array of the plurality of light-emitting modules with an adhesive interposed therebetween. The plurality of light-emitting modules to be disposed on the wiring board are arranged such that a space is left between adjacent ones of the light-emitting modules. The adhesive contains a thermosetting resin and includes a penetrating portion inside the space. The penetrating portion includes a gap detached from a lateral surface of the light-emitting modules.

Abstract: Provided is a method for machining a workpiece including a substrate that has front and back surfaces and a ductile material layer that contains a ductile material and is disposed on the front or back surface. The method includes a tape bonding step of bonding a tape on a side of the substrate of the workpiece, a holding step of holding the workpiece by a holding table via the tape, and a cutting step of relatively moving the holding table and a cutting blade to cause the cutting blade to cut into the ductile material layer and the substrate. In the cutting step, the cutting blade is rotated such that a portion of the cutting blade, the portion being located on a forward side in a moving direction of the cutting blade relative to the holding table, cuts into the workpiece from the ductile material layer toward the substrate.

Abstract: A circuit board with improved heat dissipation function and a method for manufacturing the circuit board are provided. The method includes providing a first metal layer defining a first slot; forming a first adhesive layer in the first slot; electroplating copper on each first pillar to form a first heat conducting portion; forming a first insulating layer on the first adhesive layer having the first heat conducting portion, and defining a first blind hole in the first insulating layer; filling the first blind hole with thermoelectric separation metal to form a second heat conducting portion; forming a first wiring layer on the first insulating layer; forming a second insulating layer on the first wiring layer, defining a second blind hole on the second insulating layer; electroplating copper in the second blind hole to form a third heat conducting portion; mounting an electronic component on the second insulating layer.

Abstract: An organic light-emitting diode (OLED) display and method of fabricating the same are disclosed. In one aspect, the OLED display includes a first substrate including a display area and a peripheral area surrounding the display area. The display area includes a plurality of pixels each including an OLED and the peripheral area includes a signal driver electrically connected to the pixels. A conductive layer is formed over the signal driver and on opposing sides of the signal driver and a second substrate is formed over the first substrate. The OLED display further includes a first seal interposed between the first and second substrates in the peripheral area and substantially sealing the first and second substrates and a second seal surrounding the first seal and formed over the signal driver.

Abstract: In this semiconductor device, a positioning protrusion is formed at a side surface of a sealing resin from which one end of a main electrode wire protrudes. Thus, the outer size of the sealing resin can be reduced as compared to a case where a positioning protrusion is formed at the bottom of the sealing resin. In addition, a thickness regulating protrusion is provided with a space from solder. Thus, it is possible to prevent interface separation or crack that would occur starting from a contact part between the thickness regulating protrusion and the solder, whereby the life of a joining part between a semiconductor module and a cooler can be ensured. Accordingly, a semiconductor device having enhanced heat dissipation property and reliability is obtained without increase in the outer size of the semiconductor module.

Abstract: A lighting unit for a motor vehicle, having a reflector, a circuit board with at least one light source, and a heat sink, wherein the circuit board is arranged on the reflector in an assembled state of the lighting unit in such a way that the light source is associated with a reflecting surface of the reflector for directed emission of the light emitted by the light source, and wherein the circuit board can be cooled in the region of the light source via the heat sink in the assembled state of the lighting unit. The circuit board is arranged between the reflector and the heat sink in the assembled state of the lighting unit and is positioned relative to the reflector and the heat sink in a predefined spatial position via the reflector and the heat sink.

Abstract: Process for producing semiconductor devices in a substrate, comprising: photolithography of a pattern of a reticle onto a portion of the substrate, defining first elements of the semiconductor devices, an exposure of the pattern being repeated a plurality of times in order to define all of the devices, photolithography of a pattern of an etch mask over all of the substrate, etching photolithography patterns into one portion of the thickness of the substrate, wherein first dicing lanes encircling the devices are included in the pattern of the etch mask and/or of the reticle, and the photolithography of the etch mask defines second dicing lanes defined by predetermined fracture lines of the edges of the substrate, and furthermore comprising the implementation of a step of irradiating the substrate with a laser beam through the first and second dicing lanes.

Abstract: Semiconductor light-emitting device, includes: substrate having base and conductive part; first to third semiconductor light-emitting elements; first to third wires connected to the first to third semiconductor light-emitting elements respectively; and light-transmitting resin part covering the first to the third semiconductor light-emitting elements, wherein the base has main and rear surfaces facing opposite sides in thickness direction of the base, wherein the conductive part includes main surface part on the main surface, wherein the main surface part includes main surface first part where the first and second semiconductor light-emitting elements are mounted, wherein the main surface first part reaches both ends of the main surface in first direction perpendicular to the thickness direction, and wherein the main surface first part is separated from both the main surface part where the third semiconductor light-emitting element is mounted and the main surface part where the first, second, and third wires

Abstract: Systems and methods to provide multiple channels of light to form a blended white light output, the systems and methods utilizing recipient luminophoric mediums to alter light provided by light emitting diodes. The predetermined blends of luminescent materials within the luminophoric mediums provide predetermined spectral power distributions in the white light output.

Abstract: A light-emitting device includes: a resin package; and a first light-emitting element and a second light-emitting element. The resin package includes: a resin portion; a first lead having an upper surface and an end surface; a second lead having an upper surface and an end surface; and a recess having lateral surfaces and a bottom surface that includes a portion of the upper surface of the first lead and a portion of the upper surface of the second lead that are exposed from the resin portion. The first light-emitting element and the second light-emitting element are disposed in the recess. The first lead and the second lead are arranged in a first direction. The first light-emitting element and the second light-emitting element are arranged in a second direction perpendicular to the first direction.

Abstract: According to an embodiment, there is provided a vehicle luminaire including: a socket; a board provided on one end side of the socket; at least one light-emitting element provided on the board; a frame part provided on the board to surround the light-emitting element; a sealing part that is provided on an inner side of the frame part and contains a resin; and an optical element provided on the sealing part. The frame part includes at least any one of a trap provided on an outer surface to retain at least a part of the resin overflowed to an outer side of the frame part, and an inclined surface provided in an edge of an opening opposite to the board side.

Abstract: A display apparatus including a flexible substrate, a plurality of light emitting devices spaced apart from one another and disposed on the flexible substrate, and a light shielding layer disposed between the light emitting devices, and partially covering the light emitting devices to define light extraction surfaces, in which a distance between adjacent light extraction areas is the same.

Abstract: A reflective composite material with a carrier consisting of aluminum with, on one side (A) of the carrier, an interlayer made of aluminum oxide, and with, above the interlayer, an optically active reflection-boosting multilayer system. In order to provide a high-reflectivity composite material of this kind which exhibits improved electrical connectivity when surface-mounting procedures are used, it is proposed that the thickness of the interlayer is in the range 5 nm to 200 nm, and that a layer of a metal or a metal alloy has been applied superficially on side (B) of the carrier that is opposite to the optically active reflection-boosting multilayer system, where the electrical resistivity at 25° C. of the metal or metal alloy is at most 1.2×10?1 ?mm2/m, where the thickness of the layer applied superficially is in the range 10 nm to 5.0 ?m.

Abstract: A light-emitting module according to an embodiment includes a plurality of light-emitting elements, light-guiding plates each having a light-exiting surface, and a wiring layer connected to electrodes of the plurality of light-emitting elements on a surface opposite to the light-exiting surface. The wiring layer includes a first terminal, a second terminal, a first wiring pattern connecting the first terminal and the second terminal, a second wiring pattern connecting the first terminal and the second terminal, a third wiring pattern disposed between the first wiring pattern and the second wiring pattern to connect the first terminal and the second terminal, a fourth wiring pattern connecting the first to third wiring patterns in parallel, the fourth wiring pattern being connected to the first terminal, and a fifth wiring pattern connecting the first to third wiring patterns in parallel, the fifth wiring pattern being connected to the second terminal.

Abstract: An organic light emitting display device includes a substrate including a light-emitting region and a reflection region, a plurality of sensing patterns disposed in the light-emitting region and the reflection region, and including a material having a first reflectivity, and a reflection pattern disposed in the reflection region, and including a material having a second reflectivity, and overlapping the plurality of sensing patterns.

Abstract: A sensor package array, a method of manufacturing the same, and a sensor package structure are provided. The method of manufacturing a sensor package array including: disposing a plurality of sensors on a substrate sequentially in an array; electrically connecting the plurality of sensors to the substrate; disposing a plastic shield on the substrate, so as to form a plurality of channels and a plurality of accommodating grooves among the plastic shield, the substrate, and the plurality of sensors; and filling a sealing material in the plurality of accommodating grooves, through the plurality of channels.