Abstract: A unit pixel includes a transparent substrate, a plurality of light emitting devices disposed on the transparent substrate, and an electrostatic discharge (ESD) protector disposed on the transparent substrate and protecting at least one of the light emitting devices from electrostatic discharge.

Abstract: A sensor includes: a substrate, a chip, and a protective layer. The chip is arranged on a surface of the substrate, the protective layer includes a silica gel protective layer, a silica gel active layer, and a strength-increasing protective layer. the silica gel protective layer is coated on the chip and adheres to the substrate; the silica gel active layer is coated on an outer surface of the silica gel protective layer, and adhesion of the silica gel active layer is greater than adhesion of the silica gel protective layer; the strength-increasing protective layer is coated on and adheres to an outer surface of the silica gel active layer, and the strength-increasing protective layer adheres to the substrate; and a strength of the strength-increasing protective layer is greater than a strength of the silica gel protective layer.

Abstract: A method for correcting a light pattern provided by a first lighting device and a second lighting device. The first lighting device projects a first light pattern and the second lighting device projects a second light pattern. There is an overlapping zone between the first light pattern and the second light pattern. The method includes the steps of, for each lighting device, dividing the light sources in groups, each group being associated to a projection distance, calculating an overlapping region as a function of the projection distance, calculating a number of affected light sources for each group as a function of a representative dimension of the overlapping region and attenuate the intensity of the light emitted by the affected light sources in each group of each lighting device, following a monotonic attenuation pattern from 100% attenuation in the first affected light source to 0% in the last affected light source.

Abstract: A semiconductor light emitting device includes a semiconductor light source, a resin package surrounding the semiconductor light source, and a lead fixed to the resin package. The lead is provided with a die bonding pad for bonding the semiconductor light source, and with an exposed surface opposite to the die bonding pad The exposed surface is surrounded by the resin package in the in-plane direction of the exposed surface.

Abstract: An indicator module is provided, including a device housing, a circuit board, a plurality of light sources, a dividing structure, and a homogenizing plate. The device housing includes a transparent window. The circuit board is disposed in the device housing. The light sources are disposed on the circuit board, wherein each light source is adapted to provide a light beam. The dividing structure is disposed in the device housing, wherein the dividing structure defines a plurality of divided spaces, and the divided spaces respectively correspond to the light sources. The homogenizing plate is disposed in the device housing. The homogenizing plate corresponds to the divided spaces, wherein an air gap is formed between the transparent window and the homogenizing plate. The light beam enters the divided space from the light source, passes through the homogenizing plate and the air gap, and is emitted through the transparent window.

Abstract: A LED lamp is disclosed which has a plurality of light unit, each of the light unit has at least one flat metal lead for heat dissipation and the lower part of the metal lead is mounted on a heat sink for a further heat dissipation.

Abstract: The present embodiments provide surface mount devices and/or systems. In some embodiments, the surface mount devices comprise a casing having a recess formed extending at least partially into said casing; and first and second leads each of which is at least partially encased by said casing and each of which has a portion exposed through said recess, wherein at least one of said first and second leads has one or more size reduction features in its said exposed portion that reduces the surface area to provide an increased surface bonding area to said casing around said lead.

Abstract: The light-emitting device having an equivalent circuit, includes at least four terminals, numbered from first terminal to fourth terminal, for electrical power feeding; a first light-emitting diode, arranged between the first terminal and the second terminal, configured to not emit light when a voltage is applied between the second terminal and one of the third terminal and the fourth terminal, and configured to emit light when a. voltage is applied between the first terminal and one of the third terminal and the four the terminal; and a second light-emitting diode, arranged between the third terminal and the fourth terminal, and configured to not emit light when the voltage is applied between the third terminal and one of the first terminal and the second terminal and configured to emit light when a voltage is applied between the fourth terminal and one of the first terminal and the second terminal.

Abstract: An object is to provide a display device with a high aperture ratio or a semiconductor device in which the area of an element is large. A channel formation region of a TFT with a multi-gate structure is provided under a wiring that is provided between adjacent pixel electrodes (or electrodes of an element). In addition, a channel width direction of each of a plurality of channel formation regions is parallel to a longitudinal direction of the pixel electrode. In addition, when a channel width is longer than a channel length, the area of the channel formation region can be increased.

Abstract: A light emitting module is disclosed. The light emitting module includes a lead frame body, lead frame, a heat spreader, an intermediate heat sink, and at least one light emitting element (LED). The lead frame body defines a cavity which accurately registers the heat spreader and includes optical or reflective walls surrounding the light emitting elements soldered on metallized traces of the heat spreader. The lead frame body encases and supports portions of the lead frame. The lead frame extends from outside the body into the cavity to accurately align with solder pads of the heat spreader. All the pre-aligned mechanical, thermal and electrical contacts are then soldered by solder reflow process under tight environmental control to prevent damage to the light emitting element. A robust, healthy 3-dimensional optical-electro-mechanical assembly having a very low thermal resistance in a thermal path from its light emitting element to its intermediate heatsink is created.

Abstract: Disclosed is a light emitting device package. The light emitting device package includes a package body having a first cavity and a second cavity; a plurality of reflective frames comprising a first reflective frame and a second reflective frame on the first cavity and the second cavity, respectively, and each of the first reflective frame and the second reflective frame comprises a bottom frame and at least two side wall frames extending from the bottom frame; and a light emitting device on the first reflective frame, wherein the first reflective frame and the second reflective frame are electrically separated from each other.

Abstract: A light-emitting element includes a supportive substrate; a reflective layer formed on the supportive substrate; a transparent layer formed on the reflective layer; a light-emitting stacked layer formed on the transparent layer; an etching-stop layer formed between the transparent layer and the reflective layer; and a plurality of contact parts formed between the light-emitting stacked layer and the transparent layer.

Abstract: A plastic SON/QFN package for high power has a pair of oblong metal pins exposed from a surface of the plastic, the pins straddling a corner of the package; each pin has a long axis, the long axes of the pair forming a non-orthogonal angle.

Abstract: A housing for an optoelectronic component including a main housing body formed by a first plastics material, and which has a recess, and a coating formed by a second plastics material, and which, at least in a region of the recess, connects at least in places to the main housing body and is in direct contact with the main housing body, wherein the first plastics material is different from the second plastics material, and the first plastics material and the second plastics material differ from one another with regard to at least one of the following material properties: temperature resistance with regard to discoloration, temperature resistance with regard to deformation, temperature resistance with regard to destruction, and resistance to electromagnetic radiation.

Abstract: A light emitting diode (LED) carrier assembly includes an LED die mounted on a silicon submount, a middle layer that is thermally conductive and electrically isolating disposed below the silicon submount, and a printed circuit board (PCB) disposed below the middle layer. The middle layer is bonded with the silicon submount and the PCB.

Abstract: A light emitting device package is provided comprising a light emitting device including at least one light emitting diode and a body including a first lead frame on which the light emitting device is mounted and a second lead frame spaced apart from the first lead frame, wherein at least one of the first and second lead frames is extending to a bending region in a first direction by a predetermined length on the basis of an outer surface of the body and is bent in a second direction intersecting the first direction.

Abstract: A light emitting device, comprising: a package which is formed of a resin and has a recess which is provided with a bottom face and two pairs of opposite inner walls surrounding the bottom face, the package having two pairs of opposite side walls made of the inner walls and corresponding outer walls; a lead frame exposed at the bottom face; a light emitting element which is provided on the lead frame; and a sealing resin provided in the recess for sealing the light emitting element, wherein the lead frame has a bottom plate portion and a reflector portion exposed along one of the pair of opposite inner walls, and a first angle between the reflector portion and the bottom face is greater than a second angle between another one of the pair of opposite inner walls which is opposite to the reflector portion and the bottom face, is provided.

Abstract: A light emitting diode package includes a first lead frame comprising a first hole cup, a second lead frame comprising a second hole cup and disposed to face the first lead frame with a gap disposed between the first lead frame and the second lead frame, a first light emitting diode chip disposed on the first hole cup, and a second light emitting diode chip disposed on the second hole cup, the first lead frame comprising a first enlarged region formed between the gap and the first hole cup, and the second lead frame comprising a second enlarged region formed between the gap and the second hole cup.

Abstract: Disclosed is a light emitting device package. The light emitting device package includes a package body having a first cavity and a second cavity; a plurality of reflective frames comprising a first reflective frame and a second reflective frame on the first cavity and the second cavity, respectively, and each of the first reflective frame and the second reflective frame comprises a bottom frame and at least two side wall frames extending from the bottom frame; and a light emitting device on the first reflective frame, wherein the first reflective frame and the second reflective frame are electrically separated from each other.

Abstract: Light-emitting device packages which may be manufactured using post-molding and with improved heat emission performance and optical quality, and methods of manufacturing the light-emitting device packages. The light-emitting device package includes: a heat dissipation pad; a light-emitting device formed on the heat dissipation pad; a pair of lead frames disposed to be spaced apart from each other at both sides of the light-emitting device and the heat dissipation pad; a molding member surrounding the side of the light-emitting device except for an emission surface of the light-emitting device; and bonding wires for electrically connecting the lead frames to the light-emitting device.

Abstract: A semiconductor light emitting device is mounted on a support substrate. The support substrate is disposed in an opening in a carrier. In some embodiments, the support substrate is a ceramic tile and the carrier is a low cost material with a lateral extent large enough to support a lens molded over or attached to the carrier.

Abstract: Embodiments include a light emitting device package. The light emitting device package comprises a housing including a cavity; a light emitting device positioned in the cavity; a lead frame including a first section electrically connected to the light emitting device in the cavity, a second section, which penetrates the housing, extending from the first section and a third section, which is exposed to outside air, extending from the second section; and a metal layer positioned on an area defined by a distance which is distant from the housing in the second section of the lead frame.

Abstract: A structure of a light emitting diode is provided. In one aspect, a light emitting diode structure comprises a light emitting diode, a conductive frame, and a substrate. The conductive frame is electrically connected to the light emitting diode and has a fixing hole connecting a first side of the conductive frame and a second side of the conductive frame opposite the first side. The fixing hole has a ladder-shaped inner sidewall with a first radius of the inner sidewall adjacent the first side smaller than a second radius of the inner sidewall adjacent the second side. The substrate has a conductive pillar that is received in the fixing hole by entering the fixing hole from the first side of the conductive frame and deformed such that the conductive pillar adheres to the ladder-shaped inner sidewall of the fixing hole.

Abstract: An LED includes a base, a pair of leads fixed on the base, a housing fixed on the leads, a chip mounted on one lead and an encapsulant sealing the chip. The housing defines a cavity in a central area thereof and a chamber adjacent to a circumferential periphery thereof. Top faces of the leads are exposed in the chamber. A blocking wall is formed in the chamber to contact the exposed top faces of the leads. A bonding force between the blocking wall and the leads is larger than that between the leads and the housing.

Abstract: The present invention is a package for optical semiconductor devices, and an optical semiconductor device using the package, which can prevent discoloration of a plating layer formed on a lead frame even when a silicone resin is used as a sealing resin for an optical semiconductor device, and which enables high luminous efficiency for a long time. Specifically, in the package for semiconductor devices, a plating laminate 15, wherein a pure Ag plating layer 4, a thin reflective plating layer 6 serving as the uppermost layer for improving the light reflection ratio, and a resistant plating layer 5 serving as an intermediate layer therebetween and having chemical resistance against at least either metal chlorides or metal sulfides are laminated, is formed on at least the surface of a lead electrode. The reflective plating layer 4 is composed of a pure Ag thin film, and the resistant plating layer 5 is composed of a complete solid solution Au—Ag alloy plating layer.

Abstract: An SMT LED device includes an LED and a circuit board supporting the LED. A pair of first solder pads are formed on the circuit board and spaced from each other. The LED includes two solder slugs extending downwardly from a bottom the LED. A positioning hole is formed at each first solder pad corresponding a position of a corresponding solder slug. A second solder pad is received in the positioning hole. Each solder slug is received in one corresponding positioning hole and electrically connected to corresponding first and second solder pads by a reflow soldering process. The present disclosure also provides a method for manufacturing the SMT LED device.

Abstract: A semiconductor light-emitting device (1) of the present invention includes: a substrate (101); a laminated semiconductor layer (20) containing a light-emitting layer, which is formed on the substrate (101); a first electrode (111) formed on the upper surface (106c) of the laminated semiconductor layer (20); and a second electrode (108) formed on an exposed surface (104c) that is formed by partially cutting the laminated semiconductor layer (20), wherein the first electrode (111) includes a transparent electrode (109) containing a hole portion (109a) through which the upper surface (106c) of the laminated semiconductor layer (20) is exposed, a junction layer (110) formed on a bottom surface (109b) and an inner wall (109d) of the hole portion (109a), and a bonding pad electrode (120) formed to cover the junction layer (110).

Abstract: An object is to provide a display device with a high aperture ratio or a semiconductor device in which the area of an element is large. A channel formation region of a TFT with a multi-gate structure is provided under a wiring that is provided between adjacent pixel electrodes (or electrodes of an element). In addition, a channel width direction of each of a plurality of channel formation regions is parallel to a longitudinal direction of the pixel electrode. In addition, when a channel width is longer than a channel length, the area of the channel formation region can be increased.

Abstract: Disclosed is a light emitting structure comprising a first semiconductor layer, a second semiconductor layer, and an active layer disposed on between the first and second semiconductor layers, a first electrode electrically connected to the first semiconductor layer and a second electrode electrically connected to the second semiconductor layer. The first semiconductor layer is formed, at an edge portion thereof, with a hole, in which a portion of the first electrode is arranged.

Abstract: The light emitting device package includes a body provided with a cavity, a first lead frame mounted on the body, a second lead frame mounted on the body and separated from the first lead frame, and a light emitting device mounted in the cavity and disposed between the first lead frame and the second lead frame, the light emitting device is formed by sequentially stacking a first conductivity-type semiconductor layer, an active layer and a second conductivity-type semiconductor layer, the sequentially stacking direction of the first conductivity-type semiconductor layer, the active layer and the second conductivity-type semiconductor layer is parallel with the bottom surface of the cavity, the first lead frame includes a first connection part electrically connected to the first conductivity-type semiconductor layer, and the second lead frame includes a second connection part electrically connected to the second conductivity-type semiconductor layer.

Abstract: Disclosed herein is a slim LED package. The slim LED package includes first and second lead frames separated from each other, a chip mounting recess formed on one upper surface region of the first lead frame by reducing a thickness of the one upper surface region below other upper surface regions of the first lead frame, an LED chip mounted on a bottom surface of the chip mounting recess and connected with the second lead frame via a bonding wire, and a transparent encapsulation material protecting the LED chip while supporting the first and second lead frames.

Abstract: According to one embodiment, a semiconductor light emitting device includes a semiconductor layer, a first electrode, a second electrode, an insulating layer, a first interconnect layer, a second interconnect layer, a first metal pillar, a second metal pillar, a film covering a side face of the first metal pillar and a side face of the second metal pillar, and a resin layer. The semiconductor layer includes a light emitting layer, a first major surface, and a second major surface formed on a side opposite to the first major surface. The film has a solder wettability poorer than a solder wettability of the first metal pillar and a solder wettability of the second metal pillar. The resin layer covers at least part of the film.

Abstract: Disclosed is a method of fabricating a light-emitting diode package, which comprises a light-emitting chip operative to emit light of a first wavelength range. The method comprises the steps of: dispensing a photoluminescent mixture on the light-emitting chip, the photoluminescent mixture being capable of absorbing a portion of light of the first wavelength range emitted from the light-emitting chip to re-emit light of a second wavelength range; partially curing the photoluminescent mixture by heating the photoluminescent mixture to a pre-curing temperature and then cooling the photoluminescent mixture to below the pre-curing temperature; and fully curing the photoluminescent mixture to harden the photoluminescent mixture. An apparatus for fabricating a light-emitting diode package is also disclosed.

Abstract: A method of manufacturing a light emitting diode, includes a process of forming an n-type nitride semiconductor layer, a light emitting layer, and a p-type nitride semiconductor layer on a temporary substrate, a process of forming a p-type electrode on the p-type nitride semiconductor layer, a process of forming a conductive substrate on the p-type electrode, a process of removing the temporary substrate to expose the n-type nitride semiconductor layer, a process of forming a nanoimprint resist layer on the n-type nitride semiconductor layer, a process of pressing the nanoimprint mold on the nanoimprint resist layer to transfer the nano-pattern onto the nanoimprint resist layer, and a process of separating the nanoimprint mold from the nanoimprint resist layer having the nano-pattern and etching a portion of the nanoimprint resist layer having the nano-pattern to form an n-type electrode.

Abstract: A light emitting device includes a light emitting structure including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer. A first electrode is coupled to the first conductive semiconductor layer, and a second electrode is coupled to the second conductive semiconductor layer. A channel layer is provided around a lower portion of the light emitting structure. A first conductive support member is coupled to the second electrode and disposed adjacent to the second electrode. A second conductive support member is electrically insulated from the first conductive support member and disposed adjacent to the second electrode. A first connection part is coupled to the first electrode and the second conductive support member.

Abstract: A light emitting device package may be provided that includes: a package body which includes a first cavity and a second cavity which are formed to be depressed in at least a portion of the package body; a first light emitting device and a second light emitting device, each of which is disposed in the first cavity and the second cavity respectively; and a first fluorescent substance and a second fluorescent substance, each of which is filled in the first cavity and the second cavity respectively.

Abstract: An OLED lighting element comprises a substrate bearing an OLED structure extending laterally over said substrate and sandwiched between first and second electrode layers. The first electrode layer defines a plurality of electrically conductive tracks and said second electrode layer comprises a substantially continuous electrically conducting layer. The OLED lighting element has an electrical bus-bar connected to said electrically conductive tracks extending substantially completely along the or each lateral edge of said lighting element. The electrically conductive tracks run in a radial direction from a laterally central location within said lighting element towards said bus-bar along said lateral edges of said lighting element. A said track subdivides into a plurality of tracks with increasing distance from said central location. This arrangement makes more efficient use of the conductive tracks.

Abstract: A modular package for a light emitting device includes a leadframe including a first region having a top surface, a bottom surface and a first thickness and a second region having a top surface, a bottom surface and a second thickness that is less than the first thickness. The leadframe further includes an electrical lead extending laterally away from the second region, and the package further includes a thermoset package body on the leadframe and surrounding the first region. The thermoset package body may be on both the top and bottom surfaces of the second region. A leak barrier may be on the leadframe, and the package body may be on the leak barrier. Methods of forming modular packages including thermoset package bodies on leadframes are also disclosed.

Abstract: A method for contacting a lighting device is provided, wherein the lighting device has a circuit board which is covered at least partly by a sealing compound layer; wherein the lighting device can be separated at a separating point into two lighting device sections and each of the lighting device sections has at least one electrical contact. The method may include: removing at least the sealing compound layer on both sides of the separation point so that the contacts remain covered by a thinner, remaining sealing compound layer; separating the lighting device at the separation point; attaching a connection element at least to the remaining sealing compound layer of at least one of the lighting device sections, wherein the connection element has at least one contacting element, which contacts a respective contact covered by the remaining sealing compound layer after a separation or penetration of the remaining sealing compound layer.

Abstract: A light emitting device package is provided. The light emitting device package comprises a package body comprising a first cavity, and a second cavity connected to the first cavity; a first lead electrode, at least a portion of which is disposed within the second cavity; a second lead electrode, at least a portion of which is disposed within the first cavity; a light emitting device disposed within the second cavity; a first wire disposed within the second cavity, the first wire electrically connecting the light emitting device to the first lead electrode; and a second wire electrically connecting the light emitting device to the second lead electrode.

Abstract: An organic light emitting diode (OLED) display device, including a first substrate and a second substrate facing each other, a sealant arranged between the first and second substrates to adhere the first and second substrates together, a plurality of interconnections arranged on one of the first and second substrates and a plurality of cladding parts covering at least a portion of each of the plurality of interconnections at a location that corresponds to the sealant, each of the cladding parts including a material having a higher melting point than that of the interconnections. By including the cladding parts, a short circuit between the interconnections caused by heat applied to the sealant can be prevented, and safety and reliability of the OLED display device can be improved.

Abstract: A light emitting device including a first conductive type semiconductor layer, an active layer on the first conductive type semiconductor layer, a second conductive type semiconductor layer on the active layer, an electrode layer on the second conductive type semiconductor layer, a first electrode on the first conductive type semiconductor layer, and a second electrode on the second conductive type semiconductor layer and in an opening, the opening being in the electrode layer, wherein the second electrode has a first portion in the opening and a second portion extending from the first portion and overlapping at least a portion of the first electrode.

Abstract: Systems, and methods for the design and fabrication of OLEDs, including large-area OLEDs with metal bus lines, are provided. For a given panel area dimension, target luminous emittance, OLED device structure and efficiency (as given by the JVL characteristics of an equivalent small area pixel), and electrical resistivity and thickness of the bus line material and electrode onto which the bus lines are disposed, a bus line pattern may be designed such that Fill Factor (FF), Luminance Uniformity (U) and Power Loss (PL) may be optimized. One general design objective may be to maximize FF, maximize U and minimize PL. Another approach may be, for example, to define minimum criteria for U and a maximum criteria for PL, and then to optimize the bus line layout to maximize FF. OLED panels including bus lines with different resistances (R1) along a length of the bus line are also described.

Abstract: A semiconductor light emitting device includes a semiconductor light source, a resin package surrounding the semiconductor light source, and a lead fixed to the resin package. The lead is provided with a die bonding pad for bonding the semiconductor light source, and with an exposed surface opposite to the die bonding pad The exposed surface is surrounded by the resin package in the in-plane direction of the exposed surface.

Abstract: A semiconductor light emitting device includes a light emitting unit, a first and second conductive pillar, a sealing unit, and a first and second terminal. The light emitting unit includes a first and second semiconductor layer and a light emitting layer. The light emitting layer is provided on the first semiconductor layer. The second semiconductor layer is provided on the light emitting layer. The first conductive pillar is provided on the first semiconductor layer. The second conductive pillar is provided on the second semiconductor layer. The sealing unit covers side faces of each of the light emitting unit, the first conductive pillar, and the second conductive pillar. The first terminal is provided on the first conductive pillar and on the sealing unit. The second terminal is provided on the second conductive pillar and on the sealing unit.

Abstract: An optoelectronic module includes a radiation-emitting semiconductor component, an electrical component and a carrier substrate. The carrier substrate includes a top and a bottom, wherein first electrical connections are arranged on the bottom and second electrical connections are arranged on the top. The electrical component is arranged on the top of the carrier substrate and is electrically conductively connected with the first electrical connections. The radiation-emitting semiconductor component is arranged on the side of the electrical component remote from the carrier substrate. The radiation-emitting semiconductor component furthermore includes conductive structures electrically conductively connected with the second electrical connections.

Abstract: Provided is an optical semiconductor device includes: a light-emitting layer having a first main surface, a second main surface opposed to the first main surface, a first electrode and a second electrode which are formed on the second main surface; a fluorescent layer provided on the first main surface; a light-transmissive layer provided on the fluorescent layer and made of a light-transmissive inorganic material; a first metal post provided on the first electrode; a second metal post provided on the second electrode; a sealing layer provided on the second main surface so as to seal in the first and second metal posts with one ends of the respective first and second metal posts exposed; a first metal layer provided on the exposed end of the first metal post; and a second metal layer provided on the exposed end of the second metal post.

Abstract: The present invention is directed to LED packages and LED displays utilizing thin/low profile LED packages with improved structural integrity, emission characteristics, and customizable attributes. In some embodiments the improved structural integrity is provided by various features in the lead frame that cooperate with the casing for a stronger package. Moreover, in some embodiments the improved emission characteristics are provided by cavity features such as shape and depth, which provide for increased surface bonding area for multiple LED chips and increased viewing angle, respectively. Some embodiments also provide for gradated packages having customizable top portions for applications using smaller packages, with bottom portions comprising dimensions compatible with customary mechanical/electrical supports.

Abstract: An LED (Light Emitting Diode) module includes an LED unit having one or more LED chips and a case. The case includes: a body including a base plate made of ceramic, the base plate having a main surface and a bottom surface opposite to the main surface; a through conductor penetrating through the base plate; and one or more pads formed on the main surface and making conductive connection with the through conductor, the pads mounting thereon the LED unit. The through conductor includes a main surface exposed portion exposed to the main surface and overlapping the LED unit when viewed from top, a bottom surface reaching portion connected to the main surface exposed portion and reaching the bottom surface. The pads cover at least a portion of the main surface exposed portion.

Abstract: Disclosed are a light emitting device and a method of manufacturing the same. The light emitting device includes a substrate; a light emitting structure disposed on the substrate and having a stack structure in which a first conductivity type semiconductor layer, an active layer and a second conductivity type semiconductor layer are stacked; a lens disposed on the light emitting structure; and a first terminal portion and a second terminal portion electrically connected to the first conductivity type semiconductor layer and the second conductivity type semiconductor layer, respectively. At least one of the first and second terminal portions extends from a top surface of the light emitting structure along respective side surfaces of the light emitting structure and the substrate.