Abstract: The present invention relates to a light emitting diode with high electrostatic discharge and a fabrication method thereof, and more specifically to a light emitting diode comprising a first electrode layer provided over a upper surface of a first semiconductor layer and a upper surface of a second semiconductor layer; a transparent electrode layer formed on the upper surface of the second semiconductor layer, spaced from the first electrode layer; and a second electrode layer provided on a upper surface of the transparent electrode layer. With the present invention, there is provided a light emitting diode element with resistance against electrostatic discharge and with high reliability being strong against electrical impact, by selecting a structure arranging a form of an electrode differently from a conventional electrode.

Abstract: A light-emitting diode packaging structure comprises a light-emitting diode and first and second metal plates on which the light-emitting diode is mounted. The light-emitting diodes includes first and second electrode leads, the second electrode lead having first and second contact surfaces on an outer edge of the second electrode lead. The first metal plate includes at least one clamping portion that clamps and fixes the first electrode lead on the first metal plate. The second metal plate includes at least first and second clamping portions. The first contact surface of the second electrode lead contacts the first clamping portion, and the second contact surface of the second electrode lead contacts the second clamping portion, such that the light-emitting diode is fixed on the second metal plate in at least two dimensions parallel to a primary surface of the second metal plate on which the light-emitting diodes is mounted.

Abstract: This disclosure discloses a light-emitting device comprising a substrate; and a plurality of rectifying units, comprising a first rectifying unit and a second rectifying unit, formed on the substrate for receiving and regulating an alternating current signal into a direct current signal. Each of the rectifying units comprises a contact layer and a schottky metal layer. The light-emitting device further comprises a plurality of light-emitting diodes receiving the direct current signal; and a first terminal provided on the substrate and covering the contact layer of the first rectifying unit and the schottky metal layer of the second rectifying unit.

Abstract: Electronic devices involving contact structures, and related components, systems and methods associated therewith are described. The contact structures are particularly suitable for use in a variety of light-emitting devices, including LEDs.

Abstract: Disclosed are a light emitting device and a method of fabricating the same. The light emitting device comprises a substrate. A plurality of light emitting cells are disposed on top of the substrate to be spaced apart from one another. Each of the light emitting cells comprises a first upper semiconductor layer, an active layer, and a second lower semiconductor layer. Reflective metal layers are positioned between the substrate and the light emitting cells. The reflective metal layers are prevented from being exposed to the outside.

Abstract: The present invention provides a backlight module and a light-emitting source package structure thereof. The light-emitting source package structure comprises: a heat-dissipation base, at least one chip and a heat-dissipation fixing element. The heat-dissipation base has a connection hole. The heat-dissipation fixing element further has a connection post and a heat-dissipation fin with an abutting surface, and the connection post of the heat-dissipation fixing element passes through a through hole of a fixed plate to fix in the connection hole, so that for closely aligning the abutting surface of the heat-dissipation fin and can abut against the fixed plate. Thus, and the heat-dissipation base and the heat-dissipation fixing element are stably fixed on the both sides of the fixed plate to ensure the tightly abutting relationship with the fixed plate and enhance the assembly reliability.

Abstract: An LED includes a first intermetallic layer, a first metal thin film layer, an LED chip, a substrate, a second metal thin film layer, and a second intermetallic layer. The first metal thin film layer is located on the first intermetallic layer. The LED chip is located on the first metal thin film layer. The second metal thin film layer is located on the substrate. The second intermetallic layer is located on the second metal thin film layer, and the first intermetallic layer is located on the second intermetallic layer. Materials of the first and the second metal thin film layer are selected from a group consisting of Au, Ag, Cu, and Ni. Materials of the intermetallic layers are selected from a group consisting of a Cu—In—Sn intermetallics, an Ni—In—Sn intermetallics, an Ni—Bi intermetallics, an Au—In intermetallics, an Ag—In intermetallics, an Ag—Sn intermetallics, and an Au—Bi intermetallics.

Abstract: A display device includes an array substrate, a driving film and an adhesive member. The array substrate includes a first base substrate, a plurality of first signal pads formed on the first base substrate and a first dummy pad formed adjacent to the first signal pads. The driving film includes a base film, a plurality of output terminals formed on the base film and a first alignment mark formed adjacent to the output terminals. The adhesive member adheres the first signal pads to the output terminals, and adheres the first dummy pad to the first alignment mark.

Abstract: A semiconductor device package is provided. The semiconductor device package comprises a package body; a plurality of electrodes comprising a first electrode on the package body; a paste member on the first electrode and comprising inorganic fillers and metal powder; and a semiconductor device die-bonded on the paste member, wherein a die-bonding region of the first electrode comprises a paste groove having a predetermined depth and the paste member is formed in the paste groove.

Abstract: An organic light emitting diode (OLED) display a includes: a substrate; an organic light emitting element on the substrate and including a first electrode, a light emission layer, and a second electrode; and an encapsulation layer on the substrate while covering the organic light emitting element. The encapsulation layer includes an organic layer and an inorganic layer. A mixed area, where organic materials forming the organic layer and inorganic materials forming the inorganic layer co-exist along a plane direction of the encapsulation layer, is formed at the boundary between the organic layer and the inorganic layer.

Abstract: Disclosed are a light emitting device and a light emitting device package having the same. The light emitting device includes a light emitting structure that includes a first conductive type semiconductor layer, an active layer on the first conductive type semiconductor layer, and a second conductive type semiconductor layer on the active layer, a first electrode including at least one arm shape and contacted with a portion of the first conductive type semiconductor layer, an insulating layer covering the first electrode, and a second electrode including on at least one arm shape, wherein the second electrode disposes on at least one of the insulating layer and the second conductive type semiconductor layer.

Abstract: A lead frame base is coated with a four-layer plating. The four-layer plating includes an underlayer plating (Ni), a palladium plating, a silver plating and a gold plating arranged in this order from bottom to top.

Abstract: The invention relates to an optoelectronic component, having —a carrier (1) comprising a first main surface (Ia), —at least one optoelectronic semiconductor chip (2) having no substrate, and —a contact metallization (3a, 3b), wherein —the carrier (1) is electrically insulating, —the at least one optoelectronic semiconductor chip (2) is fastened to the first main surface (Ia) of the carrier (1) by means of a bonding material (4), particularly a solder material, —the contact metallization (3a, 3b) covers at least one area of the first main surface (Ia) free of the optoelectronic semiconductor chip (2), and —the contact metallization (3a, 3b) is electrically conductively connected to the optoelectronic semiconductor chip (2).

Abstract: A highly reliable light-emitting device, a light-emitting device which can be formed without using a metal mask, or a light-emitting device in which a voltage drop due to the resistance of an upper electrode layer is suppressed is provided. When an EL film is formed over a conductive connection electrode layer having an uneven shape, a surface of the conductive connection electrode layer cannot be fully covered. Subsequently, a conductive film to be an upper electrode layer of an EL element is formed thereover; thus, a region in contact with the conductive connection electrode layer is formed. Further, a structure is provided in a position on a counter substrate, which overlaps with the conductive connection electrode layer, and then substrates are bonded to each other so that the structure is physically in contact with the upper electrode layer over the conductive connection electrode layer.

Abstract: An optoelectronic semiconductor chip, comprising: a radiation out-coupling side (102, 910); a contact connection (104, 1000); a metal contact material (210, 912) applied to the radiation out-coupling side (102, 910) and a metal conductive connection (106, 500, 914) applied to the contact material (210, 912) and which is connected to the contact connection (104, 1000).

Abstract: A semiconductor package structure includes a bowl-like carrier, a semiconductor component, and electrode pins. The semiconductor component is disposed on the bowl-like carrier and is received in an accommodating recess of the bowl-like carrier. The electrode pins are electrically connected with the semiconductor component through wires. Channels are recessed along recess-walls of the accommodating recess and located between the semiconductor component and the electrode pins, where the wires pass through the channels. Therefore, the length of bonding wires can be reduced, and as well the cost of the wires, let alone the wires can be protected appropriately.

Abstract: Disclosed is a light emitting diode lamp that has low resistance to heat emitted therefrom. The LED lamp may include a heat coupling member thermally coupling a top part of a first lead to a top part of a second lead. The LED lamp may further include one or more top parts for lowering thermal resistance of the LED lamp. This configuration facilitates heat transfer from the first lead having an LED chip mounted thereon to the top part of the second lead and/or to the other top parts, lowering resistance to heat emitted from the LED lamp.

Abstract: Disclosed is a semiconductor light emitting element (1) which is provided with: a laminated semiconductor layer which is formed on a substrate, and in which a first semiconductor layer having a first conductivity type, a light emitting layer, and a second semiconductor layer having a second conductivity type different from the first conductivity type; a first electrode (first electrode (170)) which is formed on a surface of the first semiconductor layer in the laminated semiconductor layer, and has a first opening (170a) used for electrical connection with an outside; and a second electrode (second electrode (180)) which is formed on a surface of the second semiconductor layer, and has a second opening (180a) used for electrical connection with the outside. The surface of the second semiconductor layer is exposed by cutting off a part of the laminated semiconductor layer.

Abstract: Disclosed herein are a light emitting diode package and a method of manufacturing the same. The light emitting diode package includes: a substrate, a light-emitting layer disposed on a surface of the substrate and including a first type semiconductor layer, an active layer, and a second type semiconductor layer, a first bump disposed on the first type semiconductor layer and a second bump disposed the second type semiconductor layer, a protective layer covering at least the light-emitting layer, and a first bump pad and a second bump pad disposed on the protective layer and connected to the first bump and the second bump, respectively.

Abstract: The present invention relates to a printing circuit board with micro-radiators. The printing circuit board includes a substrate, the substrate includes multi-layer copper clad plates and multi-layer prepregs, the multi-layer copper clad plates and the multi-layer prepregs are cross-laminated, the printing circuit board also includes at least one cylindrical micro-radiator embedded into a cylindrical hole of the substrate, the height of the insulating microradiator is equal to the thickness of the substrate, an upper surface and a lower surface of the micro-radiator are covered by copper foils, a heating element is installed on one of the surfaces of the insulating micro-radiator, the other surface of the insulating micro-radiator is isolated from other circuits of the printing circuit board. The present invention combines the micro-radiator with high thermal conductivity and traditional rigid printing circuit board.

Abstract: There is provided a light emitting diode operating under AC power comprising a substrate; a buffer layer formed on the substrate; and a plurality of light emitting cells formed on the buffer layer to have different sizes and to be electrically isolated from one another, the plurality of light emitting cells being connected in series through metal wires. According to the present invention, light emitting cells formed in an LED have different sizes, and thus have different turn-on voltages when light is emitted under AC power, so that times when the respective light emitting cells start emitting light are different to thereby effectively reduce a flicker phenomenon.

Abstract: An LED package includes an insulated frame, a first metallic conductor and a second metallic conductor, a chip and an encapsulation. The insulated frame has a receiving groove defined therein. The two metallic conductors are both mounted on bottom of the insulated frame and separated from each other. The chip is placed in the receiving groove and electrically connected to the two metallic conductors. The encapsulation is located in the receiving groove. The first metallic conductor and the second metallic conductor each comprise a mounting portion exposed to the receiving groove and a reflecting portion extending from the mounting portion into the insulated frame. The first reflecting portion and the second reflecting portion cooperatively surround the receiving groove of the insulated frame.

Abstract: A lighting device may include a printed circuit board, wherein the printed circuit board has wiring on at least one of the front side and the back side thereof, the respective wiring is covered by at least one potting layer, the lighting device furthermore has at least one electrically conductive punched bushing and the punched bushing extends through a potting layer at least to the wiring and contacts the wiring.

Abstract: An LED lamp (Light Emitting Diode) manufacturing method is disclosed. The method includes the steps as following. First, a fluorescent powder and a translucent plastic are mixed to be a mixed material, and the ratio of the fluorescent powder and the translucent plastic is below 80:100. Second, the mixed material is applied to form a lamp shell by the injection molding technology. Third, at least one LED is arranged at the center of the bottom of the lamp shell.

Abstract: A process of manufacturing an LED lamp strip includes the steps of forming a plurality of through holes on an adhesive tape, mounting the adhesive tape to a top side of a scrollable lead frame, bonding a plurality of LED chips to the top side of the scrollable lead frame according to the positions of the through holes, packaging the LED chips respectively, and finally cutting the scrollable lead frame. In light of this, the LED lamp strip can be produced under the circumstances of low production cost and less production time.

Abstract: The present invention provides an electroluminescent device comprising a substrate (1) and stacked thereon in the order of mention a first transparent electrode (2), an electroluminescent stack (3), and a second electrode (4). Furthermore, the electroluminescent device comprises at least one additional hard layer (5) that is located underneath the second electrode and/or on top of the second electrode and that has a hardness larger than the hardness of the second electrode. Methods for the production of such electroluminescent devices are likewise provided.

Abstract: A light-emitting-diode (LED) array includes a first LED unit having a first electrode and a second LED unit having a second electrode. The first LED unit and the second LED unit are positioned on a common substrate and are separated by a gap. Two or more polymer materials form a multi-layered structure in the gap. A first polymer material substantially fills a lower portion of the gap and at least one additional polymer material substantially fills a remainder of the gap above the first polymer material. A kinematic viscosity of the first polymer material is less than a kinematic viscosity of the at least one additional polymer material. An interconnect, positioned on top of the at least one additional polymer material, electrically connects the first electrode and the second electrode.

Abstract: A method for manufacturing a flexible display device includes forming a heat generator on a carrier substrate, forming a flexible substrate on the heat generator, forming a thin film transistor on the flexible substrate, forming a light emitting element connected to the thin film transistor, and separating the flexible substrate from the heat generator by application of heat to the flexible substrate, the application of heat including generation of heat by the heat generator.

Abstract: An optoelectronic component comprising at least one semiconductor body having a radiation exit side, said semiconductor body being arranged by a side lying opposite the radiation exit side on a substrate, wherein at least one electrical connection region, on which a metallization bump is arranged, is arranged on the radiation exit side, the semiconductor body is at least partly provided with an insulating layer, wherein the metallization bump projects beyond the insulating layer, and at least one planar conductor structure is arranged on the insulating layer for the purpose of making contact with the semiconductor body in planar fashion, said conductor structure being electrically conductively connected to the electrical connection region by the metallization bump.

Abstract: A light-emitting device comprising a semiconductor light-emitting stack, comprising a light emitting area; an electrode formed on the semiconductor light-emitting stack, wherein the electrode comprises a current injected portion and an extension portion; a current blocking structure formed between the current injected portion and the semiconductor light-emitting stack, and formed between a first part of the extension portion and the semiconductor light-emitting stack; and an electrical contact structure formed between a second part of the extension portion and the semiconductor light-emitting stack.

Abstract: A display panel having a display area and a non-display area outside the display area is provided. The display panel includes a first substrate, a conductive light-shielding pattern, color filter patterns, first spacers, transparent pads, a second substrate, scan lines, data lines, pixel structures, third pads and fourth pads. The conductive light-shielding pattern defines a conductive matrix pattern, a plurality of first pads and second pads. Each first pad is electrically connected with one of the corresponding second pads through the conductive matrix pattern. The color filter patterns include a plurality of first filter patterns and second filter patterns. The second filter patterns are located within the non-display area and disposed on the second pads. The first spacers are disposed on the second filter patterns, and the transparent pads cover the first spacers and contact the second pads.

Abstract: A compliant bonding structure is disposed between a semiconductor device and a mount. In some embodiments, the device is a light emitting device. When the semiconductor light emitting device is attached to the mount, for example by providing ultrasonic energy to the semiconductor light emitting device, the compliant bonding structure collapses to partially fill a space between the semiconductor light emitting device and the mount. In some embodiments, the compliant bonding structure is plurality of metal bumps that undergo plastic deformation during bonding. In some embodiments, the compliant bonding structure is a porous metal layer.

Abstract: According to one embodiment, a semiconductor light emitting device includes a structure, a first electrode layer, and a second electrode layer. The structure includes a first semiconductor layer, a second semiconductor layer and a light emitting layer provided between the first semiconductor layer and the second semiconductor layer. The first electrode layer is provided on the first semiconductor layer side of the structure. The first electrode layer is made of metal and contains a portion contacting the first semiconductor layer. The second electrode layer is provided on the second semiconductor layer side of the structure. The second electrode layer has a metal portion with a thickness of not less than 10 nanometers and not more than 50 nanometers, and a plurality of openings piercing the metal portion, each of the openings having an equivalent circle diameter of not less than 10 nanometers and not more than 5 micrometers.

Abstract: A light emitting diode package includes a first lead frame comprising a first hole cup, a second lead frame comprising a second hole cup and disposed to face the first lead frame with a gap disposed between the first lead frame and the second lead frame, a first light emitting diode chip disposed on the first hole cup, and a second light emitting diode chip disposed on the second hole cup, the first lead frame comprising a first enlarged region formed between the gap and the first hole cup, and the second lead frame comprising a second enlarged region formed between the gap and the second hole cup.

Abstract: Ceramic diode carriers (10) comprising a ceramic carrier body (2) integrally connected to ceramic cooling elements (7) dissipating heat, wherein sintered metallization regions (41) are disposed as conductors on the surface (3) of the carrier body (2). LEDs (13) can be fastened to the diode carrier (10), the electrical connections thereof being electrically connectable to the conductors. In order to produce luminous bodies from ceramic diode carriers (10), at least two identical ceramic diode carriers (10) are connected into an array.

Abstract: A display device fabricated with a substrate; a display unit disposed on the substrate and including an electrode; a conductive protruding portion disposed along an outer side of the display unit and electrically connected to the electrode; a sealing substrate fixed to the substrate by an adhering layer surrounding substrate at the display unit and the conductive protruding portion, the adhering layer including a resin and a plurality of carbon fibers impregnated with the resin, and the sealing substrate including a through hole; a metal layer disposed at one side of the sealing substrate, facing the substrate, and contacting the conductive protruding portion electrically connected with the electrode; and a conductive connection portion filling the through hole and contacting the metal layer.

Abstract: A light emitting device package is provided. The light emitting device package may include a package body having a cavity formed therein, a lead frame, and a light emitting device positioned in the cavity and electrically connected to the lead frame. The lead frame may penetrate the package body such that one end of the lead frame is positioned in the cavity and the other end of the lead frame is exposed to an outside of the package body. The lead frame may be partially coated with a thin metal layer.

Abstract: A light emitting device includes a diode region comprising a first face and opposing edges, and a bond pad structure comprising at least three bond pads along only one of the opposing edges of the first face.

Abstract: In accordance with certain embodiments, an unpackaged inorganic LED die is adhered directly to a yielding substrate with a pressure-activated adhesive notwithstanding any nonplanarity of the surface of the unpackaged inorganic LED die or non-coplanarity of the contacts thereof.

Abstract: The present invention provides a compound semiconductor light emitting device including: an Si—Al substrate; protection layers formed on top and bottom surfaces of the Si—Al substrate; and a p-type semiconductor layer, an active layer, and an n-type semiconductor layer which are sequentially stacked on the protection layer formed on the top surface of the Si—Al substrate, and a method for manufacturing the same.

Abstract: A light emitting diode structure includes a diode region and a metal stack on the diode region. The metal stack includes a barrier layer on the diode region and a bonding layer on the barrier layer. The barrier layer is between the bonding layer and the diode region. The bonding layer includes gold, tin and nickel. A weight percentage of tin in the bonding layer is greater than 20 percent and a weight percentage of gold in the bonding layer is less than about 75 percent. A weight percentage of nickel in the bonding layer may be greater than 10 percent.

Abstract: An array substrate includes a substrate, a dummy pad and a driving signal output line. The substrate includes a display area displaying an image, and a peripheral area surrounding the display area. The dummy pad extends along a first direction in the peripheral area of the substrate, and includes a first protrusion portion protruding from an end portion of the dummy pad along the first direction. The driving signal output line extends along a second direction crossing with the first direction, is disposed adjacent to the dummy pad, and provides an external signal. Accordingly static electricity provided to the driving signal output line flows into the dummy pad having the first protrusion portion, so that static electricity may be prevented from flowing into the display area.

Abstract: A package substrate is disclosed. The package substrate includes a substrate body having a conductive portion, a plurality of insulation portions and two surfaces opposing to each other; and a plurality of bonding layers for heat dissipation formed on the two surfaces of the substrate body, conducted via the conductive portion and separated from one another by the insulation portions. A method for forming the package substrate is also disclosed.

Abstract: An LED includes a substrate, two LED dies mounted on the substrate, an encapsulant molded on the substrate and sealing the two LED dies, and two phosphors contained within the encapsulant and surrounding the two LED dies, respectively. The two phosphors are distributed on the two LED dies in same density and different thicknesses, whereby the mixed light from one LED die and one phosphor has a color temperature different from that mixed from another LED die and another phosphor.

Abstract: Disclosed are a light emitting diode package and a backlight unit having the same. The light emitting diode package includes a light emitting diode including generating a light in response to a driving voltage applied from the outside, first and second main leads connected to first and second electrodes, respectively, and a body section provided therein with the light emitting diode and fixes the first and second main leads thereto. The light emitting diode package includes a first sub-lead having one end portion connected to the first main lead, and a second sub-lead having one end portion connected to the second main lead and an opposite end portion spaced apart from an opposite end portion of the first sub-lead at a predetermined distance while facing the opposite end portion of the first sub-lead. The backlight unit includes a plurality of the light emitting diode packages.

Abstract: A light-emitting device package and a method of manufacturing the light-emitting device package. The light-emitting device package includes a wiring substrate; a Zener diode mounted on a first region of the wiring substrate; a light-emitting device chip mounted on the first region and a second region of the wiring substrate; and a molding member for fixing at least a portion of the wiring substrate, wherein the Zener diode is embedded in the molding member.

Abstract: A light-emitting diode package includes: a frame unit, and at least one light-emitting diode chip including a chip body and a contact layer disposed between the chip body and the frame unit. One of the frame unit and the contact layer contains a magnetic material, and the other one of the frame unit and the contact layer contains a material capable of being magnetically attracted to the magnetic material.

Abstract: There are provided a light emitting device package and a method of manufacturing thereof. The light emitting device package including a first lead frame including amounting area and a heat radiating area surrounding the mounting area, the mounting area being protruded upwardly so as to be located higher than the heat radiating area; a second lead frame disposed to be spaced apart from the first lead frame; at least one light emitting device disposed on the mounting area of the first lead frame; a molding part formed so as to fix the first and second lead frame leads thereto; and a lens part disposed over the at least one light emitting device and the molding part, and the method of manufacturing the light emitting device package are provided.

Abstract: A semiconductor chip module includes a first semiconductor chip possessing a first surface and a second surface which faces away from the first surface, and having a first transmission and reception unit which includes at least two light emitting sections and at least two light receiving sections arranged in a form of a matrix on the first surface and configured to transmit and receive optical signals; and a second semiconductor chip disposed over the first surface of the first semiconductor chip, and having a second transmission and reception unit which includes at least two light emitting sections and at least two light receiving sections arranged in a form of a matrix on a surface of the second semiconductor chip facing the first semiconductor chip and configured to transmit and receive optical signals.

Abstract: The present disclosure provides one embodiment of a method for fabricating a light emitting diode (LED) package. The method includes forming a plurality of through silicon vias (TSVs) on a silicon substrate; depositing a dielectric layer over a first side and a second side of the silicon substrate and over sidewall surfaces of the TSVs; forming a metal layer patterned over the dielectric layer on the first side and the second side of the silicon substrate and further filling the TSVs; and forming a plurality of highly reflective bonding pads over the metal layer on the second side of the silicon substrate for LED bonding and wire bonding.