Abstract: The present invention is a package for optical semiconductor devices, and an optical semiconductor device using the package, which can prevent discoloration of a plating layer formed on a lead frame even when a silicone resin is used as a sealing resin for an optical semiconductor device, and which enables high luminous efficiency for a long time. Specifically, in the package for semiconductor devices, a plating laminate 15, wherein a pure Ag plating layer 4, a thin reflective plating layer 6 serving as the uppermost layer for improving the light reflection ratio, and a resistant plating layer 5 serving as an intermediate layer therebetween and having chemical resistance against at least either metal chlorides or metal sulfides are laminated, is formed on at least the surface of a lead electrode. The reflective plating layer 4 is composed of a pure Ag thin film, and the resistant plating layer 5 is composed of a complete solid solution Au—Ag alloy plating layer.

Abstract: A ceramics substrate for mounting a light-emitting element includes a ceramic sintered body, the ceramic sintered body having a mounting section on which a light-emitting element is mounted, in a surface portion on a mounting section side of the ceramic sintered body, a ratio of crystal grains having a crystal grain size of 0.2 ?m to 1.0 ?m in equivalent circle diameter being in a range of 45% to 80%, a ratio of crystal gains having a crystal grain size of 2.0 ?m to 6.0 ?m in equivalent circle diameter being in a range of 5% to 15%, and a ratio of crystal grains having a crystal grain size of more than 6.0 ?m in equivalent circle diameter being 2.7% or less.

Abstract: A light-reflective conductive particle for an anisotropic conductive adhesive used for connecting a light-emitting element to a wiring board by anisotropic conductive connection includes a core particle covered with a metal material and a light reflecting layer formed of a light-reflective inorganic particle having a refractive index of 1.52 or greater on the surface of the core particle. Examples of the light-reflective inorganic particles having a refractive index of 1.52 or greater include a titanium oxide particle, a zinc oxide particle, and an aluminum oxide particle. The coverage of the light reflecting layer on the surface of the core particle is 70% or more.

Abstract: A light emitting device comprising a carrier, a first and a second reflective layers, a first and a second micro-structures, a LED package device, a light guide device and a light directing cover is provided. The carrier comprises an upper plate and a lower plate each having a first surface and a second surface. The lower plate has a through hole. The first and second reflective layers are formed on the edges of the second surface of the upper plate and the first surface of the lower plate, respectively. The first and second micro-structures are formed on the edges of the second surface of the upper plate and the first surface of the lower plate, respectively. The LED package device is disposed below the through hole. The light guide device is connected to the LED package device. The light directing cover surrounds the light guide device.

Abstract: An LED package comprises: an LED chip having an optically active layer on a substrate, a platform, including a central membrane of which the LED chip is mounted in close thermal contact to the material of the platform, the thickness of the membrane being less than 3/10 the chip dimension (L) the thickness of the supporting frame being more than twice the membrane thickness, typically 10 times and possibility up to 25 times which is integrally formed with the membrane, is substantially larger than the thickness of the membrane, wherein the membrane is provided with at least an electrically isolated through contact filled with electrically conducting material and connected to one of the electrodes of the LED chip.

Abstract: A light emitting diode (LED) package and a manufacturing method thereof are provided. The LED package includes a substrate including a circuit layer, an LED mounted on the substrate, and a plurality of protruded reflection units disposed in a region excluding an LED mounting region on the substrate and configured to reflect light generated from the LED.

Abstract: A lead frame assembly includes a surrounding frame and a plurality of lead frame sets arranged in a matrix. Each lead frame set includes spaced-apart first and second lead frames and a connecting structure interconnecting one of the lead frame sets to an adjacent lead frame set. Each lead frame set is further connected to the surrounding frame through the connecting structure thereof. A plurality of insulated bars are spacedly formed on a lead frame panel. Each insulated bar covers a corresponding row of the lead frame sets and exposes bottom surfaces of the first and second lead frames. Each insulated bar further covers portions of the surrounding frame that are adjacent to two opposite outermost ones of the lead frame sets.

Abstract: A light emitting device and method of manufacture are described. In an embodiment, the light emitting device includes a micro LED device, a light pipe around the micro LED device to cause internal reflection of incident light from the micro LED device within the light pipe, and a wavelength conversion layer comprising phosphor particles over the light pipe. Exemplary phosphor particles include quantum dots that exhibit luminescence due to their size, or particles that exhibit luminescence due to their composition.

Abstract: According to one embodiment, a light emitting device includes a base substrate, first and second substrates, first and second semiconductor light emitting elements. The first and second substrates are provided on a major surface of the base substrate and include first and second reflection regions, respectively. The first and second semiconductor light emitting elements include first and second structural bodies including first and second light emitting layers, respectively. Each of the first and second semiconductor light emitting elements is inputted with a power not less than 1 Watt. An area of a face of the first semiconductor light emitting element is S1, and a gap between the first light emitting layer and the first substrate is t1. An area R1 of the first reflection region satisfies a relationship (S1+100t12)?R1?(S1+10000t12). A gap L between the first and the second semiconductor light emitting elements satisfies the relationships 100t1?L?10000t1.

Abstract: An LED assembly according to an embodiment of the present invention may improve dark regions generated between LED chips by employing a first reflective layer between the LED chips. By employing a transparent optical layer or an optical layer including a scattering particle between an LED chip and a phosphor layer, direct contact between the LED chip and the phosphor layer may be avoided, thereby preventing a low light extraction efficiency. Further, by employing a second reflection layer on side surfaces of an LED chip, an optical layer, and a phosphor layer, a relatively high contrast may be obtained. An LED assembly may enhance contrast through a reflective layer while increasing light extraction efficiency by including a scattering particle in a phosphor layer.

Abstract: A light emitting diode (LED) comprises a substrate, an epitaxial layer and an aluminum nitride (AlN) layer sequentially disposed on the substrate. The AlN layer comprises a plurality of stacks separated from each other, wherein the epitaxial layer entirely covers the plurality of stacks of the AlN layer. The AlN layer with a plurality of stacks reflects upwardly light generated by the epitaxial layer and downwardly toward the substrate to an outside of LED through a top plan of the LED. A method for forming the LED is also disclosed.

Abstract: Provided is a method of fabricating a light-emitting diode (LED) device. The method includes providing a substrate having opposite first and second sides. A semiconductor layer is formed on the first side of the substrate. The method includes forming a photoresist layer over the semiconductor layer. The method includes patterning the photoresist layer into a plurality of photoresist components. The photoresist components are separated by openings. The method includes filling the openings with a plurality of thermally conductive components. The method includes separating the semiconductor layer into a plurality of dies using a radiation process that is performed to the substrate from the second side. Each of the first regions of the substrate is aligned with one of the conductive components.

Abstract: A light emitting device is described, including a second conductive type semiconductor layer; an active layer over the second conductive type semiconductor layer; a first conductive type semiconductor layer over the active layer; a second electrode in a first region under the second conductive type semiconductor layer; a current blocking layer including a metal; and a first electrode over the first conductive type semiconductor layer. Further, the first electrode has at least one portion that vertically overlaps the current blocking layer.

Abstract: Provided is a producing of a surface-emitting laser capable of aligning a center axis of a surface relief structure with that of a current confinement structure with high precision to reduce a surface damage during the producing. The producing of the laser having the relief provided on a laminated semiconductor layer and a mesa structure, the process comprising the steps of: forming, on the layer, one of a first dielectric film and a first resist film having a first pattern for defining the mesa and a second pattern for defining the relief and then forming the other one of the films; forming a second resist film to cover the second pattern and expose the first pattern; and forming the mesa by removing the layer under the first pattern using the second resist film.

Abstract: An embodiment of the invention provides a method for forming a chip package which includes: providing a substrate having a first surface and a second surface, wherein at least one optoelectronic device is formed in the substrate; forming an insulating layer on the substrate; forming a conducting layer on the insulating layer on the substrate, wherein the conducting layer is electrically connected to the at least one optoelectronic device; and spraying a solution of light shielding material on the second surface of the substrate to form a light shielding layer on the second surface of the substrate.

Abstract: A light-emitting diode includes a substrate, a first semiconductor layer above the substrate, an active layer above the first semiconductor layer, a second semiconductor layer above the active layer, wherein the active layer is between the first semiconductor layer and the second semiconductor layer a trench penetrating through the second semiconductor layer and the active layer to expose the first semiconductor layer a first electrode disposed at a bottom of the trench, wherein the first electrode includes at least one first finger, an insulating layer covering the first electrode, and a second electrode including at least one second finger on the insulating layer, wherein the second finger overlaps with the first finger and the second finger has a width smaller than that of the trench.

Abstract: Disclosed is an LED package. The LED package includes a package body, a first frame and a second frame on the package body and a light emitting device chip on the first frame. The first frame is separated from the second frame, and the first frame includes a bottom frame on the package body and at least two sidewall frames extending from the bottom frame and inclined with respect to the bottom frame.

Abstract: A lead 1 includes a die-bonding portion 11 with an opening 11a penetrating in a thickness direction. Another lead 2 is spaced from the lead 1. An LED unit 3 includes an LED chip 30 with a electrode terminal 31 connected to the lead 1 and another electrode terminal 32 connected to the lead 2. The LED unit 3, mounted on a surface of the die-bonding portion 11 on a first side in z direction, overlaps the opening 11a. A wire 52 connects the lead 2 and the electrode terminal 32. A support member 4 supporting the leads 1-2 is held in contact with another surface of the die-bonding portion 11 on a second side in z direction. These arrangements ensure efficient heat dissipation from the LED chip 30 and efficient use of light emitted from the LED chip 3.

Abstract: An embodiment of the invention provides a chip package which includes: a substrate having a first surface and a second surface; an optoelectronic device formed in the substrate; a conducting layer disposed on the substrate, wherein the conducting layer is electrically connected to the optoelectronic device; an insulating layer disposed between the substrate and the conducting layer; a light shielding layer disposed on the second surface of the substrate and directly contacting with the conducting layer, wherein the light shielding layer has a light shielding rate of more than about 80% and has at least an opening exposing the conducting layer; and a conducting bump disposed in the opening of the light shielding layer to electrically contact with the conducting layer, wherein all together the light shielding layer and the conducting bump substantially and completely cover the second surface of the substrate.

Abstract: Embodiments of the disclosed technology provide a transflective transistor thin film array substrate and a method for manufacturing the same. The transflective thin film transistor array substrate, comprising pixel units defined by gate lines and data lines, and each pixel unit comprises a thin film transistor and a common electrode and is divided into a reflective region and a transmissive region. The reflective region comprises a reflective electrode and a second pixel electrode of the reflective region, the transmissive region comprises first and second pixel electrodes of the transmissive region, and the second pixel electrode of the reflective region and the first and second pixel electrodes of the transmissive region are provided in one pixel electrode layer.

Abstract: An LED assembly according to an embodiment of the present invention may improve dark regions generated between LED chips by employing a first reflective layer between the LED chips. By employing a transparent optical layer or an optical layer including a scattering particle between an LED chip and a phosphor layer, direct contact between the LED chip and the phosphor layer may be avoided, thereby preventing a low light extraction efficiency. Further, by employing a second reflection layer on side surfaces of an LED chip, an optical layer, and a phosphor layer, a relatively high contrast may be obtained. An LED assembly may enhance contrast through a reflective layer while increasing light extraction efficiency by including a scattering particle in a phosphor layer.

Abstract: A method for manufacturing an LED package comprising steps of: providing a substrate and forming spaced electrode structures on the substrate; providing a mold on the top surface of the substrate wherein the mold defines spaced annular grooves which cooperate with the top surface of the substrate to define cavities; filling the cavities with metal material; removing the mold and hardening the metal material to form reflection cups wherein each reflection cup surrounds a corresponding electrode structure and defines a recess; polishing surfaces of the reflection cups and the electrode structures; arranging LED chips in the recesses with each LED chip electrically connected to the electrode structure; injecting an encapsulation layer in the recesses to seal the LED chips; and cutting the substrate to obtain individual LED packages.

Abstract: A method for producing a light emitting transfer sheet includes the steps of preparing a light emitting element sheet including a light semiconductor layer connected to an electrode portion on one side surface and a phosphor layer laminated on the other side surface; dividing the light emitting element sheet into plural pieces to form a plurality of light emitting elements; disposing a plurality of the light emitting elements on a substrate to be spaced apart from each other; forming a reflecting resin layer containing a light reflecting component on the substrate so as to cover the light emitting elements; and removing the reflecting resin layer partially so that one side surface of the electrode portion is exposed from the reflecting resin layer.

Abstract: An element-connecting board is a lead frame for allowing a light emitting diode element to be connected to one side thereof in a thickness direction. The element-connecting board includes the lead frame which is provided with a plurality of leads disposed with spaces from each other and a first insulating resin portion which is light reflective and fills the spaces.

Abstract: Provided are a light emitting device, a light emitting device package, and a lighting system. The light emitting device includes a substrate, a light emitting structure layer, a second electrode, a first electrode, a contact portion, and a first electrode layer. The first electrode is disposed in the substrate from a lower part of the substrate to a lower part of a first conductive type semiconductor layer in a region under an active layer. The contact portion is wider than the first electrode and makes contact with the lower part of the first conductive type semiconductor layer. The first electrode layer is disposed under the substrate and connected to the first electrode.

Abstract: A reliable semiconductor light-emitting device can include a wavelength converting material in a cavity mounting at least one semiconductor light-emitting chip. The device can also include an encapsulating resin to cover the wavelength converting material so as to emit a wavelength-converted light using light emitted from the chip. The wavelength converting material should include a transparent resin having a large thermal expansion coefficient to maintain a high thermal resistance, and the encapsulating resin is subject to cracks due to a high transparent resin. The semiconductor device can be configured to form a space between the wavelength converting material and the encapsulating resin so that each of the encapsulating resin and the wavelength converting material cannot contact with each other even under a high temperature.

Abstract: A light emitting module includes: a light emitting element including: a first light emitting surface, and second light emitting surfaces bordering the first light emitting surface; an optical wavelength conversion member that converts a wavelength of light emitted from the light emitting element, wherein the optical wavelength conversion member is plate-shaped and is disposed such that an incident surface of the optical wavelength conversion member faces the first light emitting surface; and a reflecting member disposed to face the incident surface of the optical wavelength conversion member, the reflecting member comprising a reflecting surface. The reflecting surface faces the second light emitting surfaces, and the reflecting surface is inclined such that a distance between the reflecting surface and the second light emitting surfaces is gradually increased toward the incident surface of the optical wavelength conversion member.

Abstract: A method of at least partially releasing an epitaxial layer of a material from a substrate. The method comprises the steps of: forming a patterned sacrificial layer on the substrate such that the substrate is partially exposed and partially covered by the sacrificial layer; growing the epitaxial layer on the patterned sacrificial layer by nano-epitaxial lateral overgrowth such that the epitaxial layer is formed above an intermediate layer comprising the patterned sacrificial layer and said material; and selectively etching the patterned sacrificial layer such that the epitaxial layer is at least partially released from the substrate.

Abstract: A light emitting device according to the embodiment includes a first conductive semiconductor layer; an active layer under the first conductive semiconductor layer; a second conductive semiconductor layer under the active layer; a current blocking region under the second conductive semiconductor layer; a second electrode layer under the second conductive semiconductor layer and the current blocking region; and a first electrode layer including a protrusion protruding toward the first conductive semiconductor layer arranged, on the first conductive semiconductor layer.

Abstract: The present disclosure relates generally to a light emitting diode assembly and a thermal control blanket. The light emitting diode assembly and the thermal control blanket have advantageous reflective and thermal properties.

Abstract: Disclosed are a light emitting device package and a lighting system including the same. The light emitting device package includes a first lead frame and a second lead frame disposed on an insulating layer and electrically separated from each other by a separation part, and a light emitting device disposed on the second lead frame and electrically connected to the first lead frame, and the second lead frame includes a through part disposed opposite to the separation part such that the light emitting device is located therebetween.

Abstract: A method of manufacturing a lead frame for a light-emitting device package and a light-emitting device package are provided. The method of manufacturing a lead frame for a light-emitting device package includes: preparing a base substrate for the lead frame; forming diffusion roughness on the base substrate; and forming a reflective plating layer on the diffusion roughness formed base substrate.

Abstract: A semiconductor light-emitting element (1) is provided which includes a semiconductor layer (10), an n-type electrode (18) which is provided on an exposed surface (12a) of an n-type semiconductor layer, wherein an exposed surface is exposed by removing a part of the semiconductor layer (10), a transparent conductive film which is provided on the semiconductor layer (10) and a p-type electrode (17) which is provided on the transparent conductive film; a light-reflecting layer (39) is provided between the semiconductor layer (10) and the transparent conductive film, wherein at least part of the light-reflecting layer overlaps with the p-type electrode (17) in the planar view; the p-type electrode (17) comprises a pad portion (P) and a linear portion (L) which linearly extends from the pad portion (P) and has an annular structure in the planar view; the n-type electrode (18) exists in an inner area which is surrounded by the linear portion (L) and exists on a straight line (L1) which goes through a center (17a)

Abstract: A semiconductor light emitting device including a first type doped semiconductor layer, a light emitting layer, a second type doped semiconductor layer, and a reflection layer is provided. The first type doped semiconductor layer has a mesa portion and a depression portion. The light emitting layer is disposed on the mesa portion and has a first surface, a second surface and a first side surface connecting the first surface with the second surface. The second type doped semiconductor layer is disposed on the light emitting layer and has a third surface, a fourth surface and a second side surface connecting the third surface with the fourth surface. Observing from a viewing direction parallel to the light emitting layer, the reflection layer covers at least part of the first side surface and at least part of the second side surface. A flip chip package device is also provided.

Abstract: A semiconductor light emitting device includes a substrate, a plurality of light emitting cells, a connection part, and a concavo-convex part. The light emitting cells are arrayed on the top surface of the substrate. Each of the light emitting cells has a first-conductivity-type semiconductor layer, an active layer, and a second-conductivity-type semiconductor layer that are sequentially stacked on the top surface of the substrate. The connection part is formed to connect the light emitting cells in series, parallel or series-parallel. The concavo-convex part is formed in at least one of the bottom surface of the substrate and the top surface of an isolation region between the light emitting cells.

Abstract: A light-emitting device which has various emission colors and can be manufactured efficiently and easily is provided. A first conductive layer formed of a semi-transmissive and semi-reflective conductive film is provided in a first light-emitting element region, so that the intensity of light in a specific wavelength region is increased with a cavity effect. As a result, the light-emitting device as a whole can emit desired light. When the first conductive layer is formed using a material with low electric resistance, voltage drop in a transparent conductive layer in the light-emitting device can be prevented. Accordingly, a light-emitting device with less emission unevenness can be manufactured. By applying such a structure to a white-light-emitting device, desired white light emission or white light emission with an excellent color rendering property can be obtained. Further, a large-area lighting device including a white-light-emitting device with less emission unevenness can be provided.

Abstract: In at least one embodiment, the optoelectronic semiconductor chip comprises a semiconductor layer sequence for generating an electromagnetic radiation, and also a silver mirror. The silver mirror is arranged at the semiconductor layer sequence. Oxygen is admixed with the silver of the silver mirror. A proportion by weight of the oxygen in the silver mirror is preferably at least 10?5 and furthermore preferably at most 10%.

Abstract: A light emitting element has an organic layer that sequentially includes a first emission layer and a second emission layer, a first reflection interface, and a second reflection interface, wherein, if the optical distance between the first reflection interface and the emission center of a first emission layer is L11, the optical distance between the first reflection interface and the emission center of a second emission layer is L21, the optical distance between the emission center of the first emission layer and the second reflection interface is L12, the optical distance between the emission center of the second emission layer and the second reflection interface is L22, a central wavelength of an emission spectrum of the first emission layer is ?1, and a central wavelength of an emission spectrum of the second emission layer is ?2, the optical distances L11, L21, L12 and L22 satisfy predetermined expressions.

Abstract: According to one embodiment, a method is disclosed for manufacturing a nitride semiconductor device. The method can include removing a growth substrate from a structure body by using a first treatment material. The structure body has the growth substrate, a buffer layer formed on the growth substrate, and the nitride semiconductor layer formed on the buffer layer. A support substrate is bonded to the nitride semiconductor layer. The method can include reducing thicknesses of the buffer layer and the nitride semiconductor layer by using a second treatment material different from the first treatment material after removing the growth substrate.

Abstract: Disclosed are a light emitting device and a method of manufacturing the same. The light emitting device includes a support substrate, a reflective ohmic contact layer on the support substrate, a functional complex layer including a process assisting region and ohmic contact regions divided by the process assisting region on the reflective ohmic contact layer, and a light emitting semiconductor layer including a second conductive semiconductor layer, an active layer, and a first conductive semiconductor layer on each ohmic contact region.

Abstract: A method for producing a plurality of radiation-emitting components includes A) providing a carrier layer having a plurality of mounting regions separated from one another by separating regions; B) applying an interlayer to the separating regions; C) applying a respective radiation-emitting device to each of the plurality of mounting regions; D) applying a continuous potting layer to the radiation-emitting device and the separating regions; E) severing the potting layer and partially severing the interlayer in the separating regions of the carrier layer in a first separating step; and F) partially severing the interlayer and severing the carrier layer in a second separating step, wherein the interlayer is completely severed by the first and the second separating step.

Abstract: An embodiment of the invention provides a chip package which includes: a substrate having a first surface and a second surface; an optoelectronic device formed in the substrate; a conducting layer disposed on the substrate, wherein the conducting layer is electrically connected to the optoelectronic device; an insulating layer disposed between the substrate and the conducting layer; a first light shielding layer disposed on the second surface of the substrate; and a second light shielding layer disposed on the first light shielding layer and directly contacting with the first light shielding layer, wherein a contact interface is between the first light shielding layer and the second light shielding layer.

Abstract: The present invention provides a light emitting element which emits linearly polarized light, has high efficiency, can show a higher luminance and has also adequate productivity.

Abstract: An embodiment of the invention provides a chip package which includes: a substrate having a first surface and a second surface; an optoelectronic device disposed at the first surface; a protection layer disposed on the second surface of the substrate, wherein the protection layer has an opening; a conducting bump disposed on the second surface of the substrate and filled in the opening; a conducting layer disposed between the protection layer and the substrate, wherein the conducting layer electrically connects the optoelectronic device to the conducting bump; and a light shielding layer disposed on the protection layer, wherein the light shielding layer does not contact with the conducting bump.

Abstract: A semiconductor light-emitting diode (10) is proposed having at least one p-doped light-emitting diode layer (4), an n-doped light-emitting diode layer (2) and an optically active zone (3) between the p-doped light-emitting diode layer (4) and the n-doped light-emitting diode layer (2), having an oxide layer (8) consisting of a transparent conductive oxide, and having at least one mirror layer (9), wherein the oxide layer (8) is disposed between the light-emitting diode layers (2, 4) and the at least one mirror layer (9), and comprises a first boundary surface (8a) which faces the light-emitting diode layers (2, 4) and a second boundary surface (8b) which faces the at least one mirror layer (9), and wherein the second boundary surface (8b) of the oxide layer (8) has less roughness (R2) than the first boundary surface (8a) of the oxide layer (8).

Abstract: Provided is an LED package. It is easy to control luminance according to the luminance and an angle applicable. Since heat is efficiently emitted, the LED package is easily applicable to a high luminance LED. The manufacturing process is convenient and the cost is reduced. The LED package includes a substrate, an electrode, an LED, and a heatsink hole. The electrode is formed on the substrate. The LED is mounted in a side of the substrate and is electrically connected to the electrode. The heatsink hole is formed to pass through the substrate, for emitting out heat generated from the LED.

Abstract: A light-emitting diode (LED) with a mirror protection layer includes sequentially stacked an N-type electrode, an N-type semiconductor layer, a light-emitting layer, a P-type semiconductor layer, a metal mirror layer, a protection layer, a buffer layer, a binding layer, a permanent substrate, and a P-type electrode. The protection layer is made of metal oxide, and has a hollow frame for covering or supporting edges of the metal mirror layer.

Abstract: A light emitting apparatus comprises an electrically insulating base member; a pair of electrically conductive pattern portions formed on an upper surface of the base member; at least one light emitting device that is electrically connected to the pair of electrically conductive pattern portions; and a resin portion that surrounds at least a side surface of the at least one light emitting device and partially covers the pair of electrically conductive pattern portions. Each of the pair of electrically conductive pattern portions extends toward a periphery of the base member from resin-covered parts of the electrically conductive pattern portions. At least the resin-covered parts of each of the electrically conductive pattern portions has at least one elongated through hole extending in a direction in which the electrically conductive pattern portions extend from the resin-covered parts, wherein the resin portion contacts the base member via the through holes.

Abstract: A light emitting device is disclosed. The light emitting device includes a first conductive type semiconductor layer, an active layer disposed on the first conductive type semiconductor layer, a tunnel junction layer comprising a second conductive type nitride semiconductor layer and a first conductive type nitride semiconductor layer disposed on the active layer, wherein the first conductive type nitride semiconductor layer and the second conductive type nitride semiconductor layer are PN junctioned, a first electrode disposed on the first conductive type semiconductor layer, and a second electrode disposed on the first conductive type nitride semiconductor layer, wherein a portion of the second electrode is in schottky contact with the second conductive type nitride semiconductor layer through the first conductive type nitride semiconductor layer.

Abstract: A light-emitting element, a light-emitting module, a light-emitting panel, or a light-emitting device in which loss due to electrical resistance is reduced is provided. The present invention focuses on a surface of an electrode containing a metal and on a layer containing a light-emitting organic compound. The layer containing a light-emitting organic compound is provided between one electrode including a first metal, whose surface is provided with a conductive inclusion, and the other electrode.