Abstract: A process for manufacturing an organic light-emitting diode device bearing a structure having a textured outer surface including a substrate made of inorganic glass that forms the support of the organic light-emitting diode device, includes: manufacturing the structure having a textured outer surface including: vapor depositing, onto the substrate made of inorganic glass, a first dielectric layer of at least 300 nm in thickness at a temperature greater than or equal to 100° C. so as to form protrusions, depositing onto the first layer a second smoothing dielectric layer, having a refractive index greater than or equal to that of the first layer, and made of an essentially amorphous material so as to sufficiently smooth the protrusions and to form the textured outer surface, and depositing, directly onto the smoothing layer, an electrode in the form of layer(s), so as to form a surface that conforms substantially to the smoothed outer surface.

Abstract: The exemplary embodiments of the present invention include forming a photoconductor thin film on a front surface of a substrate; forming a photoconductor thin film pattern by patterning the photoconductor thin film; and forming a metal electrode on the photoconductor thin film pattern.

Abstract: A method of manufacturing a semiconductor optical device including a semiconductor layer includes: forming a semiconductor layer; forming a first dielectric film on a first region of a surface of the semiconductor layer; forming a second dielectric film on a second region of the surface of the semiconductor layer, the second dielectric film having a density higher than that of the first dielectric film; and performing a thermal treatment in a predetermined temperature range after the second dielectric film forming, wherein within the temperature range, as the temperature is lowered, a difference increases between a bandgap in the semiconductor layer below the second dielectric film and a bandgap in the semiconductor layer below the first dielectric film due to the thermal treatment.

Abstract: A high efficiency Group III nitride light emitting diode is disclosed. The diode includes a substrate selected from the group consisting of semiconducting and conducting materials, a Group III nitride-based light emitting region on or above the substrate, and, a lenticular surface containing silicon carbide on or above the light emitting region.

Abstract: A lighting device including an electroluminescent (EL) material is connected to an external power supply easily and the convenience is improved. In a lighting device having a light-emitting element including an electroluminescence (EL) layer, a housing including a light-emitting element has a terminal electrode electrically connected to the light-emitting element on a peripheral end portion. The terminal electrode provided on the housing so as to be exposed to the outside is in contact with a terminal electrode for the external power supply, so that the external power supply and the light-emitting element are electrically connected to each other and power can be supplied to the lighting device.

Abstract: According to one embodiment, a ceramic substrate for mounting a device is provided. The ceramic substrate includes a through-hole and a recessed portion provided on at least one edge surface thereof.

Abstract: Described is a solid-state light-emitting element, a light-emitting device using the solid-state light-emitting element, and a lighting device using the light-emitting device. The solid-state light-emitting element comprises a member with a low refractive index which has a hemispherical structure on a first surface and an uneven structure on a second surface, a bonding layer with a high refractive index which planarizes the uneven structure, and a light-emitting body whose light-emitting surface is in contact with a flat surface of the bonding layer. The uneven structure of the member with a low refractive index is provided inside at least an outside shape of the hemispherical structure formed on the first surface; and the light-emitting body is provided such that an outside shape of the light-emitting region of the light-emitting body is smaller than the outside shape of the hemispherical structure and overlaps with the hemispherical structure.

Abstract: Provided is a light-emitting device including: a nitride semiconductor light-emitting element (402) which radiates optically polarized light; and a light emission control layer (404) which covers the light emission surface of the nitride semiconductor light-emitting element (402) and which contains a resin and non-fluorescent particles dispersed in the resin, in which the light emission control layer (404) contains the non-fluorescent particles at a proportion of 0.01 vol % or more and 10 vol % or less, and the non-fluorescent particles have a diameter of 30 nm or more and 150 nm or less.

Abstract: An optical element package includes: an optical element in a form of a chip, and a lens resin having a convex lens surface covering an optical functional surface of the optical element. The convex lens surface is formed as a rough surface having a plurality of minute convex curved surfaces having a vertex in a direction perpendicular to a plane in contact with each part of the convex lens surface.

Abstract: A method for forming a light guide layer with improved transmission reliability in a semiconductor substrate, the method including forming a trench in the semiconductor substrate, forming a cladding layer and a preliminary light guide layer in the trench such that only one of opposite side end portions of the preliminary light guide layer is in contact with an inner sidewall of the trench, and performing a thermal treatment on the substrate to change the preliminary light guide layer into the light guide layer.

Abstract: A light emitting diode device includes a substrate, one or more light emitting diode chips on the substrate configured to emit electromagnetic radiation, and a lens configured to encapsulate the light emitting diode chips having a surface with a micro-roughness structure. The micro-roughness structure functions to improve the light extraction of the electromagnetic radiation and to direct the electromagnetic radiation outward from the lens.

Abstract: Disclosed are a light emitting device, a method of manufacturing the same and a light emitting device package. The light emitting device of the embodiment includes a light emitting structure including a first conductive semiconductor layer, a second conductive semiconductor layer and an active layer between the first and second conductive semiconductor layers; a fluorescent layer on the light emitting structure; and a light extracting structure on the fluorescent layer. The light extracting structure extracts light, which is generated in the light emitting structure and incident into an interfacial surface between the fluorescent layer and the light extracting structure, to an outside of the light emitting structure.

Abstract: According to one embodiment, an organic EL device includes a substrate, a first translucent insulating film, a second translucent insulating film, a first electrode, a second electrode, and an emitting layer. The substrate has a first index of refraction. The first translucent insulating film is on the substrate, and the first insulating film has a second index of refraction higher than the first index of refraction. The second translucent insulating film is on the first insulating film, and the second insulating film has a third index of refraction lower than the second index of refraction. The first electrode is on the second insulating film, and the first electrode has a fourth index of refraction higher than the third index of refraction. The second electrode is facing the first electrode. The emitting layer is between the first electrode and the second electrode.

Abstract: There is provided a semiconductor light emitting device and method of making the same, having a first conductivity type semiconductor layer; an active layer formed on the first conductivity type semiconductor layer; a second conductivity type semiconductor layer formed on the active layer and including a plurality of holes; and a transparent electrode formed on the second conductivity type semiconductor layer.

Abstract: A stack of semiconductor layers (310) forms a re-emitting semiconductor construction (RSC). The stack (310) includes an active region (316) that converts light at a first wavelength to light at a second wavelength, the active region (316) including at least one potential well. The stack (310) also includes an inactive region (318) extending from an outer surface of the stack to the active region. Depressions (326) are formed in the stack (310) that extend from the outer surface into the inactive region (318). An average depression depth is at least 50% of a thickness of the inactive region. Alternatively, the average depression depth is at least 50% of a nearest potential well distance. Still other alternative characterizations of the depressions (326) are also disclosed. The depressions (326) may have at least a 40% packing density in plan view. The depressions (326) may also have a substantial portion of their projected surface area associated with obliquely inclined surfaces.

Abstract: A semiconductor structure including a light emitting layer disposed between an n-type region and a p-type region and a photonic crystal formed within or on a surface of the semiconductor structure is combined with a ceramic layer which is disposed in a path of light emitted by the light emitting layer. The ceramic layer is composed of or includes a wavelength converting material such as a phosphor.

Abstract: A backlight unit (49) of a display device (69) having a liquid crystal display panel (59) is provided with a chassis (41), a diffusion plate (43) supported by the chassis, and a light source which irradiates the diffusion plate with light. The light source is constructed by combining a plurality of mounting substrates (21) provided with an LED (22) which serves as the light-emitting element and a diffusion lens (24) for covering the LED. Connectors (25A) are mounted on matching edges of the plurality of mounting substrates to electrically connect the substrates. The connectors are placed so as not to interfere with the illumination light region in which the LED imparts brightness to the diffusion plate. In order to achieve this state of non-interference, a beveled part (26) is formed on the side of the connectors facing the LED.

Abstract: A photoelectric device includes a ceramic substrate defining a cavity in a top thereof and having two electrode layers beside the cavity. A photoelectric die is received in the cavity. A first packing layer is received in the cavity and encapsulates the photoelectric die. The photoelectric die is electrically connected with the electrode layers via two wires. A reflective cup is mounted on the ceramic substrate and defines a receiving space above the top of the ceramic substrate and the first packing layer. A second packing layer is received in the receiving space and covers the first packing layer.

Abstract: Provided is a light-emitting device having a structure in which a high refractive index component is provided between a solid light-emitting element and air, has an uneven structure on a surface in contact with air, and can be reused. The light-emitting device includes a substrate having a refractive index of 1.6 or higher and a light-transmitting property, a solid light-emitting element including a light-emitting region having a refractive index of 1.6 or higher on one surface of the substrate, and a component having a refractive index of 1.6 or higher and a light-transmitting property on the other surface of the substrate, wherein the component includes an uneven structure on a surface in contact with air and is connected to the substrate via a liquid having a refractive index of 1.6 or higher and a light-transmitting property.

Abstract: The present invention provides manufacturing methods for a power LED substrate with a mounting hole and a heat sink and for its power LED product and products thereof. The disclosed fabrication methods for power LED heat-dissipating substrate include the following steps a) selecting substrate material and processing; b) fabricating heat sink; c) assembling substrate and heat sink. The manufacturing methods of power LED products are based upon the manufacturing methods for heat-dissipating substrate, including the following steps: mounting LED die, bonding wire, packaging, post hardening, separating components, testing, classifying, and taping.

Abstract: A submount for mounting an LED chip includes a substrate, a die attach pad configured to receive an LED chip on an upper surface of the substrate, a first meniscus control feature on the substrate surrounding the die attach pad and defining a first encapsulant region of the upper surface of the substrate, and a second meniscus control feature on the substrate surrounding the first encapsulant region and defining a second encapsulant region of the upper surface of the substrate. The first and second meniscus control features may be substantially coplanar with the die attach pad. A packaged LED includes a submount as described above and further includes an LED chip on the die attach pad, a first encapsulant on the substrate within the first encapsulant region, and a second encapsulant on the substrate within the second encapsulant region and covering the first encapsulant. Method embodiments are also disclosed.

Abstract: A light-emitting diode and a method for manufacturing the same are described. The light-emitting diode includes a bonding substrate, a first conductivity type electrode, a bonding layer, an epitaxial structure, a second conductivity type electrode, a growth substrate and an encapsulant layer. The first conductivity type electrode and the bonding layer are respectively disposed on two surfaces of the bonding substrate. The epitaxial structure includes a first conductivity type semiconductor layer, an active layer and a second conductivity type semiconductor layer. A trench is set around the epitaxial structure and extends from the second conductivity type semiconductor layer to the first conductivity type semiconductor layer. The second conductivity type electrode is electrically connected to the second conductivity type semiconductor layer. The growth substrate is disposed on the epitaxial structure and includes a cavity exposing the epitaxial structure and the trench.

Abstract: A light-emitting structure comprises a semiconductor light-emitting element which includes a first connection point and a second connection point. The light-emitting structure further includes a first electrode electrically connected to the first connection point, and a second electrode electrically connected the second connection point. The first electrode and the second electrode can form a concave on which the semiconductor light-emitting element is located.

Abstract: According to one embodiment, in a light emitting device, a substrate is transparent to a wavelength of emitted light. A first dielectric layer is formed in a first region on the substrate, and has a refractive index smaller than a refractive index of the substrate. A second dielectric layer is formed in a second region on the substrate surrounding the first region, and has a refractive index larger than the refractive index of the substrate. A first semiconductor layer is formed on the first dielectric layer, the second dielectric layer and the substrate. A second semiconductor layer is formed on the first semiconductor layer, and includes an active layer having a PN junction.

Abstract: An embodiment of the invention provides a chip package which includes: a substrate having a first surface and a second surface; an optoelectronic device disposed at the first surface; a protection layer disposed on the second surface of the substrate, wherein the protection layer has an opening; a conducting bump disposed on the second surface of the substrate and filled in the opening; a conducting layer disposed between the protection layer and the substrate, wherein the conducting layer electrically connects the optoelectronic device to the conducting bump; and a light shielding layer disposed on the protection layer, wherein the light shielding layer does not contact with the conducting bump.

Abstract: A light emitting diode (LED) package is disclosed. The LED package includes a lead frame comprising a thermal pad and at least two electrode pads disposed at a distance from the thermal pad; at least one LED mounted on the thermal pad and electrically connected with the at least two electrode pads through a wire; a package mold comprising a first cavity to receive the thermal pad and the at least two electrode pads and to partially expose the thermal pad and the at least two electrode pads through a first surface of the package mold, the first surface on which the at least one LED is mounted, and exposing the thermal pad and the at least two electrode pads through a surface coplanar with a second surface opposite to the first surface; and a molding unit disposed in the first cavity.

Abstract: Exemplary embodiments of the present invention relate to light emitting diodes. A light emitting diode according to an exemplary embodiment of the present invention includes a substrate having a first side edge and a second side edge, and a light emitting structure arranged on the substrate. The light emitting structure includes a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer. A transparent electrode layer including a concave portion and a convex portion is arranged on the second conductivity-type semiconductor layer. A first electrode pad contacts an upper surface of the first conductivity-type semiconductor layer and is located near a center of the first side edge. Two second electrode pads are located near opposite distal ends of the second side edge to supply electric current to the second conductivity-type semiconductor layer.

Abstract: Disclosed is a light emitting device according to the present embodiment, which includes, a substrate; a first electrode layer disposed on the substrate; a light emitting structure disposed on the first electrode layer, which includes a first conductive semiconductor layer, a second conductive semiconductor layer and an active layer placed between the first and second conductive semiconductor layers; and a conductive layer, which includes a base conductive layer disposed under the substrate, a body connected to the base conductive layer while passing through the substrate and the first electrode layer, and a head disposed on top of the first electrode layer. Accordingly, the light emitting device is capable of improving light extraction efficiency and include a conductive layer to provide a carrier as well as a semiconductor layer, which are securely formed on the device.

Abstract: According to one embodiment, a semiconductor device includes a lead, a frame, an optical semiconductor element, a sealing resin and a lens. The frame includes a main body covering a portion of the lead and being provided with a recess, another portion of the lead being exposed in the recess, and a casing part provided along an opening edge of the recess, the casing part including a cutout portion. The optical semiconductor element is provided in the recess and is in electrical connection with the lead. The sealing resin fills the recess from a bottom to the casing part, thereby covering the optical semiconductor element. The lens is joined to the sealing resin.

Abstract: An LED unit includes an LED and a lens mounted on the LED. The lens includes a light-incident face adjacent to the LED, a light-emergent face remote from the LED, and a light-reflecting face between the light-incident face and the light-emergent face. The light-incident face includes a first light-incident face facing the LED, and the light-emergent face includes a first light-emergent face located opposite to the first light-incident face. The first light-incident face is a continuously curved face which has a curvature, along a bottom-to-top direction of the lens, firstly decreasing gradually to a first value; then increasing gradually to a second value; then decreasing gradually again to a third value; and then increasing gradually again. The light-emergent face has a first light-emergent face located above the first light-incident face and having a varied curvature.

Abstract: An LED package structure includes a substrate unit, a conductive unit, a heat-dissipating unit, a light-emitting unit and a package unit. The substrate unit includes an insulating substrate. The conductive unit includes two top conductive pads disposed on top surface of the insulating substrate, two bottom conductive pads disposed on bottom surface of the insulating substrate, and a plurality of penetrating conductive posts passing the insulating substrate. The two top conducive pads respectively electrically connect the two bottom conductive pads through the penetrating conductive posts. The heat-dissipating unit includes a top heat-dissipating block and a bottom heat-dissipating block respectively disposed on top and bottom surfaces of the insulating substrate. The light-emitting unit includes a light-emitting element on the top heat-dissipating block and electrically connected between the two top conductive pads.

Abstract: Methods of packaging a semiconductor light emitting device include dispensing a first quantity of encapsulant material into a cavity including the light emitting device. The first quantity of encapsulant material in the cavity is treated to form a hardened upper surface thereof having a shape. A luminescent conversion element is provided on the upper surface of the treated first quantity of encapsulant material. The luminescent conversion element includes a wavelength conversion material and has a thickness at a middle region of the cavity greater than proximate a sidewall of the cavity.

Abstract: The present invention relates to a method for manufacturing a light emitting diode (LED) chip for a chip on board and a method for manufacturing an LED light source module in a chip on board fashion. The method of the present invention includes forming a plurality of LED chips on a wafer, molding a region of each LED chip, cutting the wafer into each LED chip, and testing each LED chip for operating characteristics.

Abstract: The invention provides a white light emitting diode device, which includes: a conductive substrate; a multilayered light emitting semiconductor epitaxial structure formed on the conductive substrate; a contact provided on the multilayered light emitting semiconductor epitaxial structure; a transparent layer provided on the multilayered light emitting semiconductor epitaxial structure; a wavelength converting layer provided on the transparent layer; and an optical layer provided on the wavelength converting layer. The invention also provides a method of manufacturing the white light emitting diode device.

Abstract: According to one embodiment, a semiconductor light emitting device includes a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type, a light emitting portion, a first transparent conductive layer, and a second transparent conductive layer. The light emitting portion is provided between the first and second semiconductor layers. The second semiconductor layer is disposed between the first transparent conductive layer and the light emitting portion. The first transparent conductive layer includes oxygen. The second transparent conductive layer is provided between the second semiconductor layer and the first transparent conductive layer. The second transparent conductive layer has a refractive index higher than a refractive index of the first transparent conductive layer, and includes oxygen at a concentration higher than a concentration of oxygen included in the first transparent conductive layer.

Abstract: A method of coating a light emitting device is provided. The method includes preparing a plurality of light emitting devices. The plurality of light emitting devices are coated with a first photocurable liquid. First light is selectively exposed to the first photocurable liquid to form a first coating layer on at least a partial region of a surface of each of the plurality of light emitting devices. The plurality of light emitting devices on which the first coating layer is formed are coated with a second photocurable liquid. Second light is selectively exposed to the second photocurable liquid to form a second coating layer on at least a partial region of the surface of each of the plurality of light emitting devices or a surface of the first coating layer. The first coating layer corresponds to the cured first photocurable liquid, while the second coating layer corresponds to the cured second photocurable liquid.

Abstract: A planar light source device is provided which satisfies the inequality ?1<?2, where ?1 is the angle formed between the direction in which an array of mortar-shaped light-emitting devices (50) emits light of maximum intensity and a vertical direction on a plane containing the vertical direction and the X direction or on a plane containing the vertical direction and the Y direction and ?2 is the angle formed between the direction in which the array of mortar-shaped light-emitting devices (50) emits light of maximum intensity and a diagonal direction (C) across the array on a plane containing the vertical direction and the diagonal direction (C), the first and second unevenness eliminating sheets (113a and 113b) each having surfaces one of which is more distant from the light sources than the other and is shaped such that shapes having upwardly convex cross-sections and extending along a longitudinal direction are arranged at pitches (P?), the pitches (Px and Py) being longer than the pitches (P?).

Abstract: There are provided a semiconductor substrate configured to improve the light extraction efficiency of a light emitting device, and a light emitting device using the substrate. The light emitting device includes the substrate, a buffer layer, and a light emitting structure, and the buffer layer and the light emitting structure being sequentially stacked on the substrate. The substrate includes a plurality of lenses disposed on a top surface thereof, and the lenses have a horn shape and are configured such that the buffer layer grows both on the top surface of the substrate and lateral surfaces of the lenses.

Abstract: A surface mounted LED packaging structure based on a silicon substrate includes the silicon substrate, an LED chip, an annular convex wall and a lens. The silicon substrate has an upper surface of planar structure and without grooves. An oxide layer covers the upper surface of the silicon substrate. Metal electrode layers are arranged in the upper surface of the oxide layer, and the upper surfaces of the metal electrode layers are arranged with metal bumps. Vias through the silicon substrate are provided under the metal electrode layers. An insulating layer covers the inner wall of the vias and a part of the lower surface of the silicon substrate. A metal connection layer covers the insulating layer surface within the vias. Two conductive metal pads are respectively arranged under the lower surface of the silicon substrate and insulated from the silicon substrate. A heat conduction metal pad is arranged on the lower surface of the silicon substrate. The LED chip is flip-chip mounted on the silicon substrate.

Abstract: Semiconductor light emitting device packaging methods include fabricating a substrate configured to mount a semiconductor light emitting device thereon. The substrate may include a cavity configured to mount the semiconductor light emitting device therein. The semiconductor light emitting device is mounted on the substrate and electrically connected to a contact portion of the substrate. The substrate is liquid injection molded to form an optical element bonded to the substrate over the semiconductor light emitting device. Liquid injection molding may be preceded by applying a soft resin on the electrically connected semiconductor light emitting device in the cavity. Semiconductor light emitting device substrate strips are also provided.

Abstract: The present invention relates to an LED packaging structure and packaging method. Said packaging structure includes a substrate, an LED chip, one or more convex walls and a colloid lens shaped by the restriction of the convex walls. Said convex walls are arranged on the substrate, at least one LED chip is arranged on the substrate within an area surrounded by the convex walls, and the colloid lens enclosing the LED chip is arranged within the area surrounded by the convex walls. The colloid lens is formed with desired colloid shape by placing a liquid colloid within the area confined by the convex walls and utilizing surface tension of the liquid, and is cured. Compared to prior art, the LED packaging structure of the present invention is simple and reasonable, with simple production process and lower costs.

Abstract: The present invention relates to a surface mounted LED structure of integrating functional circuits on a silicon substrate, comprising the silicon substrate and an LED chip. Said silicon substrate has an upper surface of planar structure without grooves. An oxide layer covers the upper surface of the silicon substrate, and metal electrode layers are arranged in the upper surface of the oxide layer. The upper surfaces of said metal electrode layers are arranged with metal bumps, and the LED chip is flip-chip mounted to the silicon substrate. Two conductive metal pads are arranged on the lower surface of said silicon substrate, said conductive metal pads are electrically connected to the metal electrode layers on the upper surface of the silicon substrate by a metal lead arranged on the side wall of the silicon substrate. A heat conduction metal pad is arranged on the corresponding lower, surface of the silicon substrate just below the LED chip.

Abstract: A semiconductor structure having: an electrically and thermally conductive layer disposed on one surface of the semiconductor structure; an electrically and thermally conductive heat sink; a electrically and thermally conductive carrier layer; a plurality of electrically and thermally nano-tubes, a first portion of the plurality of nano-tubes having proximal ends disposed on a first surface of the carrier layer and a second portion of the plurality of nano-tubes having proximal ends disposed on an opposite surface of the carrier layer; and a plurality of electrically and thermally conductive heat conductive tips disposed on distal ends of the plurality of nano-tubes, the plurality of heat conductive tips on the first portion of the plurality of nano-tubes being attached to the conductive layer, the plurality of heat conductive tips on the second portion of the plurality of nano-tubes being attached to the heat sink.

Abstract: Disclosed are a light emitting device and a method of manufacturing the same. The light emitting device includes a substrate; a light emitting structure disposed on the substrate and having a stack structure in which a first conductivity type semiconductor layer, an active layer and a second conductivity type semiconductor layer are stacked; a lens disposed on the light emitting structure; and a first terminal portion and a second terminal portion electrically connected to the first conductivity type semiconductor layer and the second conductivity type semiconductor layer, respectively. At least one of the first and second terminal portions extends from a top surface of the light emitting structure along respective side surfaces of the light emitting structure and the substrate.

Abstract: In at least one embodiment, an optoelectronic semiconductor component includes at least two optoelectronic semiconductor chips, which are designed to emit electromagnetic radiation in mutually different wavelength ranges when in operation. The semiconductor chips are mounted on a mounting surface of a common carrier. Furthermore, the optoelectronic semiconductor component contains at least two non-rotationally symmetrical lens bodies, which are designed to shape the radiation into mutually different emission angles in two mutually orthogonal directions parallel to the mounting surface. One of the lens bodies is here associated with or arranged downstream of each of the semiconductor chips in an emission direction.

Abstract: An optical modulator according to the present invention is configured at least by a semiconductor layer subjected to a doping process so as to exhibit a first conductivity type, and a semiconductor layer subjected to a doping process so as to exhibit a second conductivity type. Further, in the optical modulator, at least the first conductivity type semiconductor layer, a dielectric layer, the second conductivity type semiconductor layer, and a transparent electrode optically transparent in at least a near-infrared wavelength region are laminated in order.

Abstract: An apparatus comprising an electronic-photonic device. The device includes a planar substrate having a top layer on a middle layer, active electronic components and active photonic waveguide components. The active electronic components are located on first lateral regions of the top layer, and the active photonic waveguide components are located on second lateral regions of the top layer. The second-region thickness is greater than the first-region thickness. The top layer has a higher refractive index than the middle layer.

Abstract: A light-emitting element array with the improvement of the light-emitting efficiency and the improvement of the uneven amount of light is provided. A light-emitting element array comprises a light-emitting portion array consisting of a plurality of light-emitting portions linearly arranged in a main scanning direction, and a micro-lens formed on each of the light-emitting portions, wherein the micro-lens has a shape of the length of a sub-scanning direction different from the length of the main scanning direction, and the length of the sub-scanning direction is longer than the length of the main scanning direction, and is 3.5 times or less of the length of the main scanning direction.

Abstract: A wire-piercing light-emitting diode (LED) a lead frame having a first lead and a second lead. The first lead has a first transition portion and a first bottom portion with a first cutting member, and the second lead having a second transition portion and a second bottom portion with a second cutting member.

Abstract: A semiconductor light emitting apparatus for emitting a desired colored light by coating the top surface thereof with a wavelength conversion member prevents the color unevenness from occurring due to the unevenness of the coating thickness of the wavelength conversion member. The semiconductor light emitting apparatus can include a semiconductor layer having a light emitting layer with a light emitting surface having at least one corner area, a supporting substrate configured to support the semiconductor layer, and a wavelength conversion material layer formed on top of the semiconductor layer, the wavelength conversion layer having a thickness thinner from a center portion of the semiconductor layer to an outer peripheral portion. The at least one corner area can include a non-emitting portion where light cannot be projected. The non-emitting portion can be a light shielding portion, a non-light emission portion or a current confined portion.