Scattering Means (e.g., Surface Roughening) (epo) Patents (Class 257/E33.074)
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Publication number: 20130228811Abstract: An LED light source device includes an LED light source, a first powder layer located at a light path of the LED light source and a lamp shell located around the LED light source and the first powder layer. The lamp shell defines a receiving room. A second powder layer is formed on an inner surface of the lamp shell. The first powder layer and the second powder layer each have a characteristic of scattering light.Type: ApplicationFiled: September 3, 2012Publication date: September 5, 2013Applicant: ADVANCED OPTOELECTRONIC TECHNOLOGY, INC.Inventors: CHUNG-MIN CHANG, HSUEN-FENG HU, YU-WEI TSAI, CHIEN-LIN CHANG-CHIEN
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Patent number: 8525202Abstract: According to one embodiment, an LED package includes first and second lead frames, an LED chip and a resin body. The first and second lead frames are apart from each other. The LED chip is provided above the first and second lead frames, and the LED chip has one terminal connected to the first lead frame and another terminal connected to the second lead frame. In addition, the resin body covers the first and second lead frames and the LED chip, and has an upper surface with a surface roughness of 0.15 ?m or higher and a side surface with a surface roughness higher than the surface roughness of the upper surface.Type: GrantFiled: August 3, 2010Date of Patent: September 3, 2013Assignee: Kabushiki Kaisha ToshibaInventors: Gen Watari, Satoshi Shimizu, Mami Yamamoto, Hidenori Egoshi, Hiroaki Oshio, Tatsuo Tonedachi, Kazuhisa Iwashita, Tetsuro Komatsu, Teruo Takeuchi
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Patent number: 8519385Abstract: An organic light emitting diode (OLED) display according to an exemplary embodiment of the invention includes: a display substrate including a plurality of pixel areas; a tilt layer formed on the display substrate of each of the plurality of pixel areas, and having a tilt angle with respect to the display substrate; a first electrode formed on the tilt layer; an organic emission layer formed on the first electrode; a second electrode formed on the organic emission layer; an encapsulation substrate disposed on the second electrode and in parallel with the display substrate; and a prism sheet formed on the encapsulation substrate and having a plurality of prisms.Type: GrantFiled: May 7, 2012Date of Patent: August 27, 2013Assignee: Samsung Display Co., Ltd.Inventors: Jae-Ik Lim, Yi-Joon Ahn, Gee-Bum Kim, Yong-Seok Yeo, Man-Seob Choi
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Patent number: 8513685Abstract: Electrically pixelated luminescent devices incorporating optical elements, methods for forming electrically pixelated luminescent devices incorporating optical elements, and systems including electrically pixelated luminescent devices incorporating optical elements are described.Type: GrantFiled: November 6, 2009Date of Patent: August 20, 2013Assignee: 3M Innovative Properties CompanyInventors: Nicole J. Wagner, Craig R. Schardt, Catherine A. Leatherdale, Andrew J. Ouderkirk
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Publication number: 20130207143Abstract: A patterned substrate of a light emitting semiconductor device has a plurality of convex members on a top surface thereof. Each convex member has a substantially flat top surface and a plurality of convex arc-shaped sidewalls.Type: ApplicationFiled: July 13, 2012Publication date: August 15, 2013Applicant: LEXTAR ELECTRONICS CORPORATIONInventors: Hsiu-Mei Chou, Jun-Rong Chen
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Patent number: 8507924Abstract: The surface morphology of an LED light emitting surface is changed by applying a reactive ion etch (RIE) process to the light emitting surface. High aspect ratio, submicron roughness is formed on the light emitting surface by transferring a thin film metal hard-mask having submicron patterns to the surface prior to applying a reactive ion etch process. The submicron patterns in the metal hard-mask can be formed using a low cost, commercially available nano-patterned template which is transferred to the surface with the mask. After subsequently binding the mask to the surface, the template is removed and the RIE process is applied for time duration sufficient to change the morphology of the surface. The modified surface contains non-symmetric, submicron structures having high aspect ratio which increase the efficiency of the device.Type: GrantFiled: March 10, 2011Date of Patent: August 13, 2013Assignee: Cree, Inc.Inventor: Ting Li
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Publication number: 20130181241Abstract: A method of manufacturing a substrate, characterized by a first surface and a second surface, for use in a semiconductor device is provided. The method includes providing a mold having a first template and/or a second template corresponding to a first texture and a second texture respectively. Then, the method includes injection molding a material for the substrate in the mold, to form the substrate, such that the material is injection molded to create the first texture on the first surface and/or the second texture on the second surface. The first texture and/or the second texture facilitate light extraction or light trapping in the semiconductor device.Type: ApplicationFiled: January 18, 2012Publication date: July 18, 2013Inventors: Jan Matthijs Ter Meulen, Patrick Peeters, Erik Jan Prins
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Publication number: 20130168713Abstract: An LED device includes a substrate having a top surface, an LED chip arranged on the top surface of the substrate, an encapsulant arranged on the top surface of the substrate and covering the LED chip, and an optical element arranged over the encapsulant. The optical element includes a light input surface adjacent to the encapsulant and a light output surface opposite to the light input surface. The refractive index of the optical element is larger than that of the encapsulant.Type: ApplicationFiled: August 30, 2012Publication date: July 4, 2013Applicant: ADVANCED OPTOELECTRONIC TECHNOLOGY, INC.Inventors: CHAO-HSIUNG CHANG, HOU-TE LIN
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Patent number: 8476655Abstract: An optoelectronic component comprising a housing and a luminescence diode chip arranged in the housing is specified, which component emits a useful radiation. The housing has a housing material which is transmissive to the useful radiation and which is admixed with radiation-absorbing particles in a targeted manner for setting a predetermined radiant intensity or luminous intensity of the emitted useful radiation. The radiation-absorbing particles reduce the radiant intensity or the luminous intensity by a defined value in a targeted manner in order thus to set a predetermined radiant intensity or luminous intensity for the component. A method for producing an optoelectronic component of this type is additionally disclosed.Type: GrantFiled: September 22, 2006Date of Patent: July 2, 2013Assignee: OSRAM Opto Semiconductors GmbHInventors: Herbert Brunner, Kirstin Petersen
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Publication number: 20130161672Abstract: An LED package includes a substrate, two electrodes, an LED die and a lens. The substrate includes a top surface, a bottom surface, a plurality of side surfaces interconnecting the top surface with the bottom surface, and two opposite notches depressed downward from lateral peripheral portions of the top surface. The two electrodes penetrate through the substrate, and each of the two electrodes is exposed at both the top surface and the bottom surface of the substrate. The LED die is arranged on the substrate and electrically connected to the two electrodes. The lens is arranged on the substrate and covers the LED die. The lens includes a contacting surface adjoining the top surface of the substrate, and two protrusions extending from lateral peripheral portions of the contacting surface and respectively embedded in the two notches.Type: ApplicationFiled: August 30, 2012Publication date: June 27, 2013Applicant: ADVANCED OPTOELECTRONIC TECHNOLOGY, INC.Inventor: YU-LUN HSIEH
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Patent number: 8461611Abstract: According to one embodiment, a semiconductor light emitting device includes a first semiconductor layer, a second semiconductor layer and a light emitting part. The first semiconductor layer includes an n-type semiconductor layer. The second semiconductor layer includes a p-type semiconductor layer. The light emitting part is provided between the first semiconductor layer and the second semiconductor layer, and includes a plurality of barrier layers and a well layer provided between the plurality of barrier layers. The first semiconductor layer has a first irregularity and a second irregularity. The first irregularity is provided on a first major surface of the first semiconductor layer on an opposite side to the light emitting part. The second irregularity is provided on a bottom face and a top face of the first irregularity, and has a level difference smaller than a level difference between the bottom face and the top face.Type: GrantFiled: August 12, 2011Date of Patent: June 11, 2013Assignee: Kabushiki Kaisha ToshibaInventors: Hiroshi Ono, Toshiki Hikosaka, Tomoko Morioka, Toshiyuki Oka, Shinya Nunoue
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Publication number: 20130140596Abstract: A light emitting diode including a first semiconductor layer, an active layer, and a second semiconductor layer is provided. The first semiconductor layer includes a first surface and a second surface, and the first surface is connected to the substrate. The active layer and the second semiconductor layer are stacked on the second surface in that order, and a surface of the second semiconductor layer away from the active layer is configured as the light emitting surface. A first electrode covers the entire surface of the first semiconductor layer. A second electrode is electrically connected with the second semiconductor layer. A number of three-dimensional nano-structures are located on the surface of the first surface of the first semiconductor layer and aligned side by side, and a cross section of each of the three-dimensional nano-structure is M-shaped.Type: ApplicationFiled: May 23, 2012Publication date: June 6, 2013Applicants: HON HAI PRECISION INDUSTRY CO., LTD., TSINGHUA UNIVERSITYInventors: ZHEN-DONG ZHU, QUN-QING LI, LI-HUI ZHANG, MO CHEN, SHOU-SHAN FAN
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Publication number: 20130140595Abstract: A light emitting diode including a first semiconductor layer, an active layer, and a second semiconductor layer is provided. The first semiconductor layer includes a first surface and a second surface. The active layer and the second semiconductor layer are stacked on the second surface in that order, and a surface of the second semiconductor layer away from the active layer is configured as the light emitting surface. A first electrode is electrically connected with and covers the first surface of the first semiconductor layer. A second electrode is electrically connected with the second semiconductor layer. A number of three-dimensional nano-structures are located on the surface of the first surface of the first semiconductor layer and the light emitting surface, and a cross section of each of the three-dimensional nano-structure is M-shaped.Type: ApplicationFiled: May 23, 2012Publication date: June 6, 2013Applicants: HON HAI PRECISION INDUSTRY CO., LTD., TSINGHUA UNIVERSITYInventors: ZHEN-DONG ZHU, QUN-QING LI, LI-HUI ZHANG, MO CHEN, SHOU-SHAN FAN
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Publication number: 20130143342Abstract: A method for making light emitting diode is provided. The method includes following steps. A substrate is provided. A first semiconductor layer is grown on a surface of the substrate. A patterned mask layer is located on a surface of the first semiconductor layer, and the patterned mask layer includes a number of bar-shaped protruding structures, a slot is defined between each two adjacent protruding structures to expose a portion of the first semiconductor layer. The exposed first semiconductor layer is etched to form a protruding pair. A number of three-dimensional nano-structures are formed by removing the patterned mask layer. An active layer and a second semiconductor layers are grown on the number of three-dimensional nano-structures in that order. A first electrode is electrically connected with the first semiconductor layer. A second electrode is electrically connected with the second semiconductor layer.Type: ApplicationFiled: May 23, 2012Publication date: June 6, 2013Applicants: HON HAI PRECISION INDUSTRY CO., LTD., TSINGHUA UNIVERSITYInventors: ZHEN-DONG ZHU, QUN-QING LI, LI-HUI ZHANG, MO CHEN, SHOU-SHAN FAN
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Publication number: 20130143341Abstract: A method for making light emitting diode includes the following steps. A substrate is provided. A first semiconductor layer is grown on a surface of the substrate. A patterned mask layer is located on a surface of the first semiconductor layer, and the patterned mask layer includes a number of bar-shaped protruding structures, a slot is defined between each two adjacent protruding structures to expose a portion of the first semiconductor layer. The exposed first semiconductor layer is etched to form a protruding pair. A number of three-dimensional nano-structures are formed. An active layer and a second semiconductor layers are grown on the number of three-dimensional nano-structures in that order. The substrate is removed and a surface of the first semiconductor layer is exposed. A first electrode is applied to cover the exposed surface. A second electrode is electrically connected with the second semiconductor layer.Type: ApplicationFiled: May 23, 2012Publication date: June 6, 2013Applicants: HON HAI PRECISION INDUSTRY CO., LTD., TSINGHUA UNIVERSITYInventors: ZHEN-DONG ZHU, QUN-QING LI, LI-HUI ZHANG, MO CHEN, SHOU-SHAN FAN
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Publication number: 20130140594Abstract: A light emitting diode including a substrate, a first semiconductor layer, an active layer, and a second semiconductor layer is provided. A surface of the substrate away from the active layer is configured as the light emitting surface. The first semiconductor layer includes a first surface and a second surface, and the first surface is connected to the substrate. The active layer and the second semiconductor layer are stacked on the second surface in that order. A first electrode electrically is connected with the first semiconductor layer. A second electrode is electrically connected with and covers a surface of the second semiconductor layer. A number of three-dimensional nano-structures are located on the surface of the first surface of the first semiconductor layer and the light emitting surface, and a cross section of each of the three-dimensional nano-structure is M-shaped.Type: ApplicationFiled: May 23, 2012Publication date: June 6, 2013Applicants: HON HAI PRECISION INDUSTRY CO., LTD., TSINGHUA UNIVERSITYInventors: ZHEN-DONG ZHU, QUN-QING LI, LI-HUI ZHANG, MO CHEN, SHOU-SHAN FAN
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Publication number: 20130140592Abstract: A light emitting diode structure and methods of manufacturing the same are disclosed. In an example, a light emitting diode structure includes a crystalline substrate having a thickness that is greater than or equal to about 250 ?m, wherein the crystalline substrate has a first roughened surface and a second roughened surface, the second roughened surface being opposite the first roughened surface; a plurality of epitaxy layers disposed over the first roughened surface, the plurality of epitaxy layers being configured as a light emitting diode; and another substrate bonded to the crystalline substrate such that the plurality of epitaxy layers are disposed between the another substrate and the first roughened surface of the crystalline substrate.Type: ApplicationFiled: December 1, 2011Publication date: June 6, 2013Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Yea-Chen Lee, Jung-Tang Chu, Ching-Hua Chiu, Hung-Wen Huang
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Patent number: 8455282Abstract: A semiconductor light emitting diode (LED) and a manufacturing method thereof are disclosed. The method for manufacturing a semiconductor light emitting diode (LED) includes: forming a light emission structure including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer on a substrate with prominences and depressions; removing the substrate from the light emission structure to expose a first concavoconvex portion corresponding to the prominences and depressions; forming a protection layer on the first concavoconvex portion; removing a portion of the protection layer to expose a convex portion of the first concavoconvex portion; and forming a second concavoconvex portion on the convex portion of the first concavoconvex portion.Type: GrantFiled: June 16, 2011Date of Patent: June 4, 2013Assignee: Samsung Electronics Co., Ltd.Inventors: Ki Sung Kim, Gi Bum Kim, Tae Hun Kim, Young Chul Shin, Young Sun Kim
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Patent number: 8450762Abstract: Disclosed are a light emitting device, a method of manufacturing the same, a light emitting device package, and a lighting system. The light emitting device includes the light emitting structure layer including a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer between the first and second conductive semiconductor layers, a conductive support substrate electrically connected to the second conductive semiconductor layer, a contact electrically connected to the first conductive semiconductor layer, a dielectric material making contact with the contact and interposed between the contact and the conductive support substrate, and an insulating layer electrically insulating the contact from the active layer, the second conductive semiconductor layer, and the conductive support substrate.Type: GrantFiled: April 23, 2012Date of Patent: May 28, 2013Assignee: LG Innotek Co., Ltd.Inventor: Hwan Hee Jeong
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Patent number: 8436384Abstract: Disclosed are a semiconductor light emitting device and a method for manufacturing the same. The semiconductor light emitting device comprises a substrate, in which concave-convex patterns are in at least a portion of a backside of the substrate, and a light emitting structure on the substrate and comprising a first conductive semiconductor layer, an active layer and a second conductive semiconductor layer.Type: GrantFiled: February 16, 2011Date of Patent: May 7, 2013Assignee: LG Innotek Co., Ltd.Inventor: Ho Sang Yoon
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Patent number: 8431943Abstract: The present invention is intended to provide an organic LED element in which the extraction efficiency is improved up to 80% of emitted light, and provides a translucent substrate comprising a translucent glass substrate; a scattering layer formed on the glass substrate and comprising a glass which contains a base material having a first refractive index for at least one wavelength of light to be transmitted and a plurality of scattering materials dispersed in the base material and having a second refractive index different from that of the base material; and a translucent electrode formed on the scattering layer and having a third refractive index higher than the first refractive index, wherein distribution of the scattering materials in the scattering layer decreases toward the translucent electrode.Type: GrantFiled: May 7, 2010Date of Patent: April 30, 2013Assignee: Asahi Glass Company, LimitedInventors: Nobuhiro Nakamura, Motoshi Ono, Kenji Imakita, Hidefumi Odaka, Nao Ishibashi, Kazutaka Hayashi
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Patent number: 8421108Abstract: According to one embodiment, a semiconductor light emitting device includes a first semiconductor layer, a second semiconductor layer and a light emitting part. The first semiconductor layer includes an n-type semiconductor layer. The second semiconductor layer includes a p-type semiconductor layer. The light emitting part is provided between the first semiconductor layer and the second semiconductor layer, and includes a plurality of barrier layers and a well layer provided between the plurality of barrier layers. The first semiconductor layer has a first irregularity and a second irregularity. The first irregularity is provided on a first major surface of the first semiconductor layer on an opposite side to the light emitting part. The second irregularity is provided on a bottom face and a top face of the first irregularity, and has a level difference smaller than a level difference between the bottom face and the top face.Type: GrantFiled: August 12, 2011Date of Patent: April 16, 2013Assignee: Kabushiki Kaisha ToshibaInventors: Hiroshi Ono, Toshiki Hikosaka, Tomoko Morioka, Toshiyuki Oka, Shinya Nunoue
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Patent number: 8421107Abstract: A group III nitride semiconductor light emitting device including an LED structure formed on top of a single crystal, base layer (103) formed on top of a substrate (101) including a principal plane (10) having a flat surface (11) configured from a (0001) C plane, and a plurality of convex portions (12) including a surface (12c) non-parallel to the C plane having a width (d1) of 0.05 to 1.5 ?m and height (H) of 0.05 to 1 ?m, the base layer is formed by causing a group III nitride semiconductor to grow epitaxially so as to cover the flat surface and convex portions, and the width (d1) of the convex portions and top portion thickness (H2) of the base layer at the positions of the top portions (12e) of the convex portions satisfy: H2=kd1 (wherein 0.5<k<5, and H2=0.5 ?m or more).Type: GrantFiled: June 17, 2009Date of Patent: April 16, 2013Assignee: Toyoda Gosei Co., Ltd.Inventors: Hironao Shinohara, Hiromitsu Sakai
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Patent number: 8421098Abstract: Disclosed is a semiconductor light emitting device. The semiconductor light emitting device includes a light emitting structure including a first conductive semiconductor layer, an active layer below the first conductive semiconductor layer, and a second conductive semiconductor layer below the active layer; a channel layer below the light emitting structure, in which an inner portion of the channel layer is disposed along an outer peripheral portion of the light emitting structure and an outer portion of the channel layer extends out of the light emitting structure; and a second electrode layer below the light emitting structure.Type: GrantFiled: February 12, 2010Date of Patent: April 16, 2013Assignee: LG Innotek Co., Ltd.Inventor: Hwan Hee Jeong
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Patent number: 8420436Abstract: A solar cell manufacturing method according to the present invention is a solar cell manufacturing method that forms a transparent conductive film of ZnO as an electric power extracting electrode on a light incident side, the method comprises at least in a following order: a process A forming the transparent conductive film on a substrate by applying a sputtering voltage to sputter a target made of a film formation material for the transparent conductive film; a process B forming a texture on a surface of the transparent conductive film; a process C cleaning the surface of the transparent conductive film on which the texture has been formed using an UV/ozone; and a process D forming an electric power generation layer on the transparent conductive film.Type: GrantFiled: October 27, 2009Date of Patent: April 16, 2013Assignee: ULVAC, Inc.Inventors: Hirohisa Takahashi, Satoru Ishibashi, Sadayuki Ukishima, Masahide Matsubara, Satoshi Okabe
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Publication number: 20130089939Abstract: A method for making light emitting diode is provided. The method includes following steps. A light emitting diode chip is provided, the light emitting diode includes a first semiconductor layer, an active layer and a second semiconductor layers stacked on a surface of a substrate in that order. A patterned mask layer is located on the second semiconductor layer, and the patterned mask layer includes a number of bar-shaped protruding structures aligned side by side. The second semiconductor layer is etched to form a number of three-dimensional nano-structures preform. The mask layer is removed to form a number of M-shaped three-dimensional nano-structures. The second semiconductor layer and the active layer are etched to expose a portion of the first semiconductor layer. A first electrode is electrically connected with the first semiconductor layer. A second electrode is electrically connected with the second semiconductor layer.Type: ApplicationFiled: December 29, 2011Publication date: April 11, 2013Applicants: HON HAI PRECISION INDUSTRY CO., LTD., TSINGHUA UNIVERSITYInventors: ZHEN-DONG ZHU, QUN-QING LI, SHOU-SHAN FAN
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Publication number: 20130087820Abstract: A light emitting diode is provided. The light emitting diode includes a first semiconductor layer, an active layer, a second semiconductor layer, a first electrode and a second electrode. The active layer is sandwiched between the first semiconductor layer and the second semiconductor layer, and a surface of the second semiconductor layer which is away from the active layer is a light extraction surface of the LED. The first electrode is electrically connected with the first semiconductor layer. The second electrode electrically connected with the second semiconductor layer. A number of three-dimensional nano-structures are formed on the light extraction surface of LED, the number of the three-dimensional nano-structures are aligned side by side, and a cross section of each three-dimensional nano-structure is M-shaped.Type: ApplicationFiled: December 29, 2011Publication date: April 11, 2013Applicants: HON HAI PRECISION INDUSTRY CO., LTD., TSINGHUA UNIVERSITYInventors: ZHEN-DONG ZHU, QUN-QING LI, SHOU-SHAN FAN
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Publication number: 20130087818Abstract: A light emitting diode including a substrate, a first semiconductor layer, an active layer, and a second semiconductor layer is provided. The substrate includes a first surface and a second surface, and the second surface is a light emitting surface of the LED. The first semiconductor layer, the active layer, and the second semiconductor layer are stacked on the first surface in that order. A first electrode electrically is connected with the first semiconductor layer. A second electrode is electrically connected with the second semiconductor layer. A number of three-dimensional nano-structures are located on at least one surface of the substrate and aligned side by side, and a cross section of each of the three-dimensional nano-structure is M-shaped.Type: ApplicationFiled: December 29, 2011Publication date: April 11, 2013Applicants: HON HAI PRECISION INDUSTRY CO., LTD., TSINGHUA UNIVERSITYInventors: ZHEN-DONG ZHU, QUN-QING LI, SHOU-SHAN FAN
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Patent number: 8415709Abstract: An organic light-emitting display device. The organic light-emitting display device includes a substrate, a semiconductor layer arranged on the substrate, an insulating film arranged on the semiconductor layer and a conductive layer arranged on the insulating film, wherein the semiconductor layer comprises a plurality of protrusion lines extending in a first direction, the protrusion lines being parallel to a peripheral edge of the conductive layer.Type: GrantFiled: July 13, 2011Date of Patent: April 9, 2013Assignee: Samsung Display Co., Ltd.Inventors: Jong-Hyun Park, Chun-Gi Yoo, Sun Park, Yul-Kyu Lee, Dae-Woo Kim
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Patent number: 8415697Abstract: According to one embodiment, a light emitting element includes a semiconductor stacked body and a translucent substrate. The semiconductor stacked body includes a light emitting layer. The translucent substrate has one surface and a side surface. The semiconductor stacked body is provided on the upper surface. An unevenness uniformly distributing with average height and average pitch is provided on the side surface.Type: GrantFiled: September 20, 2010Date of Patent: April 9, 2013Assignee: Kabushiki Kaisha ToshibaInventor: Chisato Furukawa
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Patent number: 8415692Abstract: An LED package comprises at least one LED that emits LED light in an LED emission profile. The LED package includes regions of scattering particles with the different regions scattering light primarily at a target wavelength or primarily within a target wavelength range. The location of the regions and scattering properties are based at least partially on the LED emission profile. The regions scatter their target wavelength of LED light to improve the uniformity of the LED emission profile so that the LED package emits a more uniform profile compared to the LED emission profile. By targeting particular wavelengths for scattering, the emission efficiency losses are reduced.Type: GrantFiled: July 6, 2009Date of Patent: April 9, 2013Assignee: Cree, Inc.Inventor: Ronan Le Toquin
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Publication number: 20130082290Abstract: A light emitting device comprises a first layer of an n-type semiconductor material, a second layer of a p-type semiconductor material, and an active layer between the first layer and the second layer. A light coupling structure is disposed adjacent to one of the first layer and the second layer. In some cases, the light coupling structure is disposed adjacent to the first layer. An orifice formed in the light coupling structure extends to the first layer. An electrode formed in the orifice is in electrical communication with the first layer.Type: ApplicationFiled: September 29, 2011Publication date: April 4, 2013Inventors: Li Yan, Chao-Kun Lin, Chih-Wei Chuang
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Publication number: 20130082247Abstract: To provide a light-emitting device which can emit bright light without increasing the projected area of a light-emitting element and be manufactured with high yield. A light-emitting device of one embodiment of the present invention includes a plurality of projections; a first electrode formed along the plurality of projections; a layer containing a light-emitting organic compound formed along the plurality of projections and over the first electrode; and a second electrode formed along the plurality of projections and over the layer containing a light-emitting organic compound. Further, the plurality of projections each have a bottom surface having a side in contact with a bottom surface of an adjacent projection; a plurality of side surfaces each having a certain angle greater than 0° and less than or equal to 80° with respect to the bottom surface; and a vertex having a first continuously curved surface.Type: ApplicationFiled: September 26, 2012Publication date: April 4, 2013Inventors: Takuya Kawata, Hisao Ikeda, Manabu Niboshi, Seiichi Mitsui, Yoshitaka Yamamoto
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Patent number: 8410499Abstract: An LED having a p-type layer of material with an associated p-contact, an n-type layer of material with an associated n-contact and an active region between the p-type layer and the n-type layer, includes a confinement structure that is formed within one of the p-type layer of material and the n-type layer of material. The confinement structure is generally aligned with the contact on the top and primary emission surface of the LED and substantially prevents the emission of light from the area of the active region that is coincident with the area of the confinement structure and the top-surface contact. The LED may include a roughened emitting-side surface to further enhance light extraction.Type: GrantFiled: March 25, 2008Date of Patent: April 2, 2013Assignee: Cree, Inc.Inventors: Steven P. Denbaars, Shuji Nakamura, Max Batres
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Patent number: 8410490Abstract: An LED having a p-type layer of material with an associated p-contact, an n-type layer of material with an associated n-contact and an active region between the p-type layer and the n-type layer, includes a confinement structure that is formed within one of the p-type layer of material and the n-type layer of material. The confinement structure is generally aligned with the contact on the top and primary emission surface of the LED and substantially prevents the emission of light from the area of the active region that is coincident with the area of the confinement structure and the top-surface contact. The LED may include a roughened emitting-side surface to further enhance light extraction.Type: GrantFiled: November 9, 2007Date of Patent: April 2, 2013Assignee: Cree, Inc.Inventors: Steven P. Denbaars, Shuji Nakamura, Max Batres
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Patent number: 8405106Abstract: A light-emitting device including: a light-emitting stacked layer having first conductivity type semiconductor layer, a light-emitting layer formed on the first conductivity type semiconductor layer, and a second conductivity type semiconductor layer formed on the light-emitting layer, wherein the upper surface of the second conductivity type semiconductor layer is a textured surface; a first planarization layer formed on a first partial of the upper surface of the second conductivity type semiconductor layer; a first transparent conductive oxide layer formed on the first planarization layer and a second partial of the second conductivity type semiconductor layer, including a first portion in contact with the first planarization layer and a second portion having a first plurality of cavities in contact with the second conductivity type semiconductor layer; and a first electrode formed on the first portion of the first transparent conductive oxide layer.Type: GrantFiled: April 2, 2010Date of Patent: March 26, 2013Assignee: Epistar CorporationInventors: Tzu-Chieh Hsu, Ching-San Tao, Chen Ou, Min-Hsun Hsieh, Chao-Hsing Chen
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Patent number: 8405113Abstract: A semiconductor light-emitting device includes a reflective electrode on a support; a first cladding layer; a light-emitting layer; a second cladding layer having a terrace structure formed of recesses and protrusions, a light-extracting structure having projections and depressions being formed on top surfaces of the protrusions and bottom surfaces of the recesses; and surface electrodes on the top surfaces of the protrusions.Type: GrantFiled: July 29, 2011Date of Patent: March 26, 2013Assignee: Stanley Electric Co., Ltd.Inventor: Takuya Kazama
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Patent number: 8399944Abstract: A light emitting diode and a method for fabricating the same are provided. The light emitting diode includes: a transparent substrate; a semiconductor material layer formed on the top surface of a substrate with an active layer generating light; and a fluorescent layer formed on the back surface of the substrate with controlled varied thicknesses. The ratio of light whose wavelength is shifted while propagating through the fluorescent layer and the original light generated in the active layer can be controlled by adjusting the thickness of the fluorescent layer, to emit desirable homogeneous white light from the light emitting diode.Type: GrantFiled: May 28, 2003Date of Patent: March 19, 2013Assignee: Samsung Electronics Co., Ltd.Inventors: Joon-seop Kwak, Jae-hee Cho
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Patent number: 8395173Abstract: A semiconductor light-emitting element, a method of manufacturing same, and a light-emitting device enabling an increase in light emission efficiency is provided. The semiconductor light-emitting element 1 in accordance with the present invention includes: a light-emitting layer 2 having a laminated structure in which a p-type GaN film 24 and an n-type GaN film 22 are included; a conductive hexagonal pyramidal base 3 formed from ZnO and mounting with the light-emitting layer on a bottom surface 31; an anode 5 joined to the bottom surface 31 of the base 3 at a position apart from the light-emitting layer 2; and a cathode 4 mounted on the light-emitting layer 2. In the semiconductor light-emitting element 1, the p-type GaN film 24 is joined to the bottom surface 31 of the base 3, and the cathode 4 is joined to an N-polar plane of the n-type GaN film 22, said N-polar plane of the n-type GaN film 22 being an opposite side to the p-type GaN film 24.Type: GrantFiled: October 28, 2009Date of Patent: March 12, 2013Assignee: Panasonic CorporationInventors: Akihiko Murai, Hiroshi Fukshima
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Publication number: 20130056770Abstract: A patterned surface for improving the growth of semiconductor layers, such as group III nitride-based semiconductor layers, is provided. The patterned surface can include a set of substantially flat top surfaces and a plurality of openings. Each substantially flat top surface can have a root mean square roughness less than approximately 0.5 nanometers, and the openings can have a characteristic size between approximately 0.1 micron and five microns.Type: ApplicationFiled: September 6, 2012Publication date: March 7, 2013Inventors: Maxim S. Shatalov, Rakesh Jain, Jinwei Yang, Michael Shur, Remigijus Gaska
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Patent number: 8384104Abstract: A light emitting device, a light emitting device package and a lighting system including the same are provided. The light emitting device may include a light emitting structure, a dielectric pattern, a second electrode layer, and a resonator structure. The light emitting structure may include a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer. The dielectric pattern may be disposed on the second conductive type semiconductor layer. The second electrode layer may be disposed on the second conductive type comprising the dielectric pattern. The resonator structure may be disposed on the light emitting structure.Type: GrantFiled: March 9, 2010Date of Patent: February 26, 2013Assignee: LG Innotek Co., Ltd.Inventor: Sun Kyung Kim
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Patent number: 8378368Abstract: A light-emitting diode structure is provided. The light-emitting diode structure includes a light-emitting diode chip, a lead frame for electrically connecting and supporting the light-emitting diode chip, and a lens covering the light-emitting diode chip and to partially cover the lead frame. A recess disposed on the upper portion of the lens has a ladder-like inner wall formed of an upper inclined wall portion, a lower inclined wall portion, and a connecting wall portion connected to the upper and lower inclined wall portions. The slope of the upper inclined wall portion is greater than that of the lower inclined wall portion, and the slope of the connecting wall portion is greater than the upper and lower inclined wall portions.Type: GrantFiled: May 3, 2010Date of Patent: February 19, 2013Assignee: Everlight Electronics Co., Ltd.Inventors: Chia-Yun Hsu, Chih-Hung Hsu
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Publication number: 20130037841Abstract: Disclosed is a semiconductor light emitting device. The semiconductor light emitting device comprises a substrate; a light emitting structure comprising a first conductive semiconductor layer, an active layer and a second conductive semiconductor layer on the substrate; an electrode layer on the second conductive semiconductor layer; and an electrode on the electrode layer, wherein the substrate comprises a plurality of convex portions, wherein the electrode layer comprises a plurality of holes corresponding to a region of at least one of the plurality of convex portions of the substrate, wherein an insulating material is disposed in the plurality of holes on the light emitting structure.Type: ApplicationFiled: August 9, 2012Publication date: February 14, 2013Inventor: Sung Min CHOI
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Patent number: 8373184Abstract: The invention provides a nitride semiconductor light emitting device. In the invention, a first conductivity-type nitride semiconductor layer is formed on a conductive substrate having light transmissibility. An active layer is formed on the first conductivity-type nitride semiconductor layer. Also, a second conductivity-type nitride semiconductor layer is formed on the active layer. Further, a conductive light scattering layer made of a conductive material is formed on an underside of the substrate. The conductive light scattering layer has light transmissibility of 70% or more and has a rough pattern formed on an outer surface to scatter light.Type: GrantFiled: May 10, 2006Date of Patent: February 12, 2013Assignee: Samsung Electronics Co. Ltd.Inventors: Hyo Won Suh, Jin Young Hong
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Publication number: 20130032839Abstract: A manufacturing method for an LED with roughened lateral surfaces comprises following steps: providing an LED wafer with an electrically conductive layer disposed thereon; providing a photoresist layer on the electrically conductive layer; roughening a lateral surface of the electrically conductive layer by wet etching; forming a depression in the LED wafer by dry etching and roughening a sidewall of the LED wafer defining the depression; and disposing two pads respectively in the depression and the conducting layer. The disclosure also provides an LED with roughened lateral surfaces. A roughness of the roughened lateral surfaces is measurable in micrometers.Type: ApplicationFiled: May 4, 2012Publication date: February 7, 2013Applicant: ADVANCED OPTOELECTRONIC TECHNOLOGY, INC.Inventors: CHIA-HUI SHEN, TZU-CHIEN HUNG
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Publication number: 20130032836Abstract: A vertical GaN-based blue LED has an n-type layer comprising multiple conductive intervening layers. The n-type layer contains a plurality of periods. Each period of the n-type layer includes a gallium-nitride (GaN) sublayer and a thin conductive aluminum-gallium-nitride (AlGaN:Si) intervening sublayer. In one example, each GaN sublayer has a thickness substantially more than 100 nm and less than 1000 nm, and each AlGaN:Si intervening sublayer has a thickness less than 25 nm. The entire n-type layer is at least 2000 nm thick. The AlGaN:Si intervening layer provides compressive strain to the GaN sublayer thereby preventing cracking. After the epitaxial layers of the LED are formed, a conductive carrier is wafer bonded to the structure. The silicon substrate is then removed. Electrodes are added and the structure is singulated to form a finished LED device. Because the AlGaN:Si sublayers are conductive, the entire n-type layer can remain as part of the finished LED device.Type: ApplicationFiled: August 2, 2011Publication date: February 7, 2013Applicant: Bridgelux, Inc.Inventors: Zhen Chen, Yi Fu
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Publication number: 20130026481Abstract: Textured optoelectronic devices and associated methods of manufacture are disclosed herein. In several embodiments, a method of manufacturing a solid state optoelectronic device can include forming a conductive transparent texturing material on a substrate. The method can further include forming a transparent conductive material on the texturing material. Upon heating the device, the texturing material causes the conductive material to grow a plurality of protuberances. The protuberances can improve current spreading and light extraction from the device.Type: ApplicationFiled: July 26, 2011Publication date: January 31, 2013Applicant: Micron Technology, Inc.Inventors: Lifang Xu, Scott D. Schellhammer, Shan Ming Mou, Michael J. Bernhardt
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Patent number: 8362510Abstract: Provided are a vertical-type light emitting device and a method of manufacturing the same. The light emitting device includes a p-type semiconductor layer, an active layer, and an n-type semi-conductor layer that are stacked, a cover layer disposed on a p-type electrode layer to surround the p-type electrode layer, a conductive support layer disposed on the cover layer, and an n-type electrode layer disposed on the n-type semiconductor layer.Type: GrantFiled: March 30, 2011Date of Patent: January 29, 2013Assignees: Seoul Opto Device Co., Ltd., POSTECH Academy-Industry FoundationInventor: Jong-Lam Lee
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Patent number: 8361816Abstract: A method of manufacturing a vertical GaN-based LED includes forming a nitride-based buffer layer on a silicon substrate; sequentially forming a p-type GaN layer, an active layer, and an n-type GaN layer on the nitride-based buffer layer; forming an n-electrode on the n-type GaN layer; forming a plating seed layer on the n-electrode; forming a structure supporting layer on the plating seed layer; removing the silicon substrate through wet etching and forming roughness on the surface of the p-type GaN layer through over-etching; and forming a p-electrode on the p-type GaN layer having the roughness formed.Type: GrantFiled: December 6, 2006Date of Patent: January 29, 2013Assignee: Samsung Electronics Co., Ltd.Inventors: Jae Hoon Lee, Jung Hee Lee, Hyun Ick Cho, Dae Kil Kim, Jae Chul Ro
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Publication number: 20130015481Abstract: According to one embodiment, in a semiconductor light emitting device, a substrate includes a first surface, a second surface opposite to the first surface, lateral surfaces intersected with the first surface and the second surface, first regions each provided on the lateral surface, and second regions each provided on the lateral surface. Each of the first regions has a first width and a first roughness. Each of the second regions has a second width smaller than the first width and a second roughness smaller than the first roughness. The first regions and the second regions are alternately arranged. A proportion of the sum of the first widths to a distance between the first surface and the second surface is 0.5 or more. A semiconductor laminated body is provided above the first surface of the substrate, and includes a first semiconductor layer, an active layer and a second semiconductor layer.Type: ApplicationFiled: March 15, 2012Publication date: January 17, 2013Applicant: Kabushiki Kaisha ToshibaInventors: Kimitaka YOSHIMURA, Katsuhiko NISHITANI, Akihiro FUJIWARA