Abstract: A phase-shift mask having a checkerboard array and a surrounding sub-resolution assist phase pattern. The checkerboard array comprises alternating phase-shift regions R that have a relative phase difference of 180 degrees. The sub-resolution assist phase regions R? reside adjacent corresponding phase-shift regions R and have a relative phase difference of 180 degrees thereto. The sub-resolution assist phase regions R? are configured to mitigate undesirable edge effects when photolithographically forming photoresist features. Method of forming LEDs using the phase-shift mask are also disclosed.

Abstract: An epitaxial structure of a light emitting diode (LED) includes a substrate, an epitaxial layer, and a light capturing microstructure. The substrate has a top surface. The epitaxial layer is grown on the top surface of the substrate and has a P-type semiconductor layer, an active layer, and an N-type semiconductor layer in sequence. The light capturing microstructure is positioned on an upper portion of the epitaxial layer which is distant from the substrate. A manufacturing method of an epitaxial structure of an LED is also disclosed. The light capturing microstructure includes at least a concave and an insulating material filled in the at least a concave.

Abstract: To provide a semiconductor light emitting device with a light extraction efficiency increased and a method for manufacturing the semiconductor light emitting device. A semiconductor light emitting device 1 includes a supporting substrate 2 and a semiconductor stack 6 including an MQW active layer 13 emitting light and an n-GaN layer 14 at the top. In the upper surface of the n-GaN layer 14 of the semiconductor attack 6, a plurality of conical protrusions 14a are formed. The protrusions 14a are formed so that an average WA of widths W of bottom surfaces of protrusions 14 satisfies: WA>=?/n, where ? is wavelength of light emitted from the active layer and n is a refractive index of the n-GaN layer 14.

Abstract: According to one embodiment, a semiconductor light emitting device includes a first semiconductor layer, a second semiconductor layer and a light emitting part. The first semiconductor layer includes an n-type semiconductor layer. The second semiconductor layer includes a p-type semiconductor layer. The light emitting part is provided between the first semiconductor layer and the second semiconductor layer, and includes a plurality of barrier layers and a well layer provided between the plurality of barrier layers. The first semiconductor layer has a first irregularity and a second irregularity. The first irregularity is provided on a first major surface of the first semiconductor layer on an opposite side to the light emitting part. The second irregularity is provided on a bottom face and a top face of the first irregularity, and has a level difference smaller than a level difference between the bottom face and the top face.

Abstract: According to one embodiment, a semiconductor light emitting device includes an n-type semiconductor layer, an electrode, a p-type semiconductor layer and a light emitting layer. The p-type semiconductor layer is provided between the n-type semiconductor layer and the electrode and includes a p-side contact layer contacting the electrode. The light emitting layer is provided between the n-type and the p-type semiconductor layers. The p-side contact layer includes a flat part having a plane perpendicular to a first direction from the n-type semiconductor layer toward the p-type semiconductor layer and multiple protruding parts protruding from the flat part toward the electrode. A height of the multiple protruding parts along the first direction is smaller than one-fourth of a dominant wavelength of light emitted from the light emitting layer. A density of the multiple protruding parts in the plane is 5×107/cm2 or more and 2×108/cm2 or less.

Abstract: The present invention provides a light emitting device, comprising a first light emitting diode for emitting light in an ultraviolet wavelength region; at least one phosphor arranged around the first light emitting diode and excited by the light emitted from the first light emitting diode to emit light having a peak wavelength longer than the wavelength of the light emitted from the first light emitting diode; and at least one second light emitting diode for emitting light having a wavelength different from the peak wavelength of the light emitted from the phosphor. According to the present invention, there is provided a white light emitting device, wherein using a light emitting diode for emitting light different in wavelength from light that is ex-cititively emitted from the phosphor, an excitation light source, i.e., light in the ultraviolet region for exciting the phosphor is effectively used, thereby improving energy conversion efficiency and improving reliability.

Abstract: According to one embodiment, a semiconductor light-emitting device having high light extraction efficiency is provided. The semiconductor light-emitting device includes a light transmissive substrate; a nitride semiconductor layer of a first conduction type formed on or above a top face side of the light transmissive substrate; an active layer made of nitride semiconductor formed on a top face of the nitride semiconductor layer of the first conduction type; a nitride semiconductor layer of a second conduction type formed on a top face of the active layer; a dielectric layer formed on a bottom face of the light transmissive substrate and having a refractive index lower than that of the light transmissive substrate; and a metal layer formed on a bottom face of the dielectric layer. And an interface between the light transmissive substrate and the dielectric layer is a uneven face, and an interface between the dielectric layer and the metal layer is a flat face.

Abstract: Provided is a substrate for fabricating a light emitting device and a method for fabricating the light emitting device. The method for fabricating the light emitting device may include forming a sacrificial layer having band gap energy less than energy of a laser irradiated on a substrate, forming a growth layer on the sacrificial layer, forming a light emitting structure including a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer on the growth layer, and irradiating the laser onto the sacrificial layer to pass through the substrate, thereby to lift-off the substrate.

Abstract: A packaged light emitting device (LED) includes a light emitting diode configured to emit primary light having a peak wavelength that is less than about 465 nm and having a shoulder emission component at a wavelength that is greater than the peak wavelength, and a wavelength conversion material configured to receive the primary light emitted by the light emitting diode and to responsively emit light having a color point with a ccx greater than about 0.4 and a ccy less than about 0.6.

Abstract: A light amplifying device for surface enhanced Raman spectroscopy is disclosed herein. The device includes a dielectric layer having two opposed surfaces. A refractive index of the dielectric layer is higher than a refractive index of a material or environment directly adjacent thereto. At least one opening is formed in one of the two opposed surfaces of the dielectric layer, and at least one nano-antenna is established on the one of the two opposed surfaces of the dielectric layer. A gain region is positioned in the dielectric layer or adjacent to another of the two opposed surfaces of the dielectric layer.

Abstract: A high efficiency Group III nitride light emitting diode is disclosed. The diode includes a substrate selected from the group consisting of semiconducting and conducting materials, a Group III nitride-based light emitting region on or above the substrate, and, a lenticular surface containing silicon carbide on or above the light emitting region.

Abstract: A light emitting device includes a semiconductor structure having a light emitting layer disposed between an n-type region and a p-type region. A porous region is disposed between the light emitting layer and a contact electrically connected to one of the n-type region and the p-type region. The porous region scatters light away from the absorbing contact, which may improve light extraction from the device. In some embodiments the porous region is an n-type semiconductor material such as GaN or GaP.

Abstract: A III-nitride light emitting diode (LED) and method of fabricating the same, wherein at least one surface of a semipolar or nonpolar plane of a III-nitride layer of the LED is textured, thereby forming a textured surface in order to increase light extraction. The texturing may be performed by plasma assisted chemical etching, photolithography followed by etching, or nano-imprinting followed by etching.

Abstract: A method for fabricating a III-nitride semiconductor film, comprising depositing or growing a III-nitride semiconductor film in a semiconductor light absorbing or light emitting device structure; and growing a textured or structured surface of the III-nitride nitride semiconductor film in situ with the growing or the deposition of the III-nitride semiconductor film, by controlling the growing of the III-nitride semiconductor film to obtain a texture of the textured surface, or one or more structures of the structured surface, that increase output power of light from the light emitting device, or increase absorption of light in the light absorbing device.

Abstract: Disclosed are a light emitting device having a plurality of non-polar light emitting cells and a method of fabricating the same. This method comprises preparing a first substrate of sapphire or silicon carbide having an upper surface with an r-plane, an a-plane or an m-plane. The first substrate has stripe-shaped anti-growth patterns on the upper surface thereof, and recess regions having sidewalls of a c-plane between the anti-growth patterns. Nitride semiconductor layers are grown on the substrate having the recess regions, and the nitride semiconductor layers are patterned to form the light emitting cells separated from one another. Accordingly, there is provided a light emitting device having non-polar light emitting cells with excellent crystal quality.

Abstract: An LED includes a substrate, a first n-type GaN layer, a connecting layer, a second n-type GaN layer, a light emitting layer, and a p-type GaN layer. The first n-type GaN layer is formed on the substrate, the first n-type GaN layer has a first surface facing away from the substrate, and the first surface includes a first area and a second area. The connecting layer, the second n-type GaN layer, the light emitting layer, and the p-type GaN layer are formed on the first area in sequence. The connecting layer is etchable by alkaline solution; a bottom surface of the second n-type GaN layer facing towards the connecting layer has a roughened exposed portion; the GaN on the bottom surface of the second n-type GaN layer is N-face GaN.

Abstract: A method for manufacturing a light emitting device is disclosed. The disclosed method includes forming a first-conductivity-type semiconductor layer over a first substrate such that a first surface of the first-conductivity-type semiconductor layer is adjacent to the first substrate, disposing a second substrate on a second surface of the first-conductivity-type semiconductor layer opposite the first surface, separating the first substrate, disposing a third substrate on the first surface, separating the second substrate, and forming an active layer and a second-conductivity-type semiconductor layer over the second surface. In accordance with the method, it is possible to use a relatively inexpensive substrate. As a semiconductor layer is formed over a Ga-face of a gallium nitride semiconductor layer, an increase in light emission efficiency is achieved.

Abstract: A VCSEG-DFB laser, fully compatible with MGVI design and manufacturing methodologies, for single growth monolithic integration in multi-functional PICs is presented. It comprises a laser PIN structure, in mesa form, etched from upper emitter layer top surface through the active, presumably MQW, gain region, down to the top surface of the lower emitter. Lower electrical contacts sit adjacent the mesa disposed on the lower emitter layer with upper strip contacts disposed atop the upper emitter layer on the mesa top. An SEG is defined/etched from mesa top surface, between the upper strip contacts, through upper emitter layer down to or into the SCH layers. Vertical confinement is provided by the SCH structure and the lateral profile in the bottom portion of the mesa provides lateral confinement. The guided mode interacts with the SEG by the vertical tail penetrating the SEG and evanescent field coupling to the SEG.

Abstract: A light emitting device according to the embodiment includes a reflecting layer; an adhesion layer including an oxide-based material on the reflecting layer; an ohmic contact layer on the adhesion layer; and a light emitting structure layer on the ohmic contact layer.

Abstract: An exemplary light emitting package includes a base, an LED chip mounted on the base, an encapsulant layer encapsulating the LED chip and a phosphor layer located above and separated from the LED chip. The phosphor layer includes a phosphor scattered portion and a clear portion without phosphor therein. An area of the phosphor scattered portion is smaller than the light emitting area of the encapsulant layer from which light emitted upwardly from the LED chip leaves the encapsulant layer.

Abstract: A method for manufacturing a structure having a textured surface, including a substrate made of mineral glass having a given texture, for an organic-light-emitting-diode device, the method including supplying a rough substrate, having a roughness defined by a roughness parameter Ra ranging from 1 to 5 ?m over an analysis length of 15 mm and with a Gaussian filter having a cut-off frequency of 0.8 mm; and depositing a liquid-phase silica smoothing film on the substrate, the film being configured to smooth the roughness sufficiently and to form the textured surface of the structure.

Abstract: Certain example embodiments of this invention relate to techniques for improving the performance of Lambertian and non-Lambertian light sources. In certain example embodiments, this is accomplished by (1) providing an organic-inorganic hybrid material on LEDs (which in certain example embodiments may be a high index of refraction material), (2) enhancing the light scattering ability of the LEDs (e.g., by fractal embossing, patterning, or the like, and/or by providing randomly dispersed elements thereon), and/or (3) improving performance through advanced cooling techniques. In certain example instances, performance enhancements may include, for example, better color production (e.g., in terms of a high CRI), better light production (e.g., in terms of lumens and non-Lambertian lighting), higher internal and/or external efficiency, etc.

Abstract: A light emitting diode device includes a substrate, one or more light emitting diode chips on the substrate configured to emit electromagnetic radiation, and a lens configured to encapsulate the light emitting diode chips having a surface with a micro-roughness structure. The micro-roughness structure functions to improve the light extraction of the electromagnetic radiation and to direct the electromagnetic radiation outward from the lens.

Abstract: A light emitting diode is provided, comprising: a substrate; a metal wiring layer disposed on the substrate; alight emitting element provided on the metal wiring layer; wherein the light emitting element comprises: a semiconductor light emitting layer having a first semiconductor layer, an active layer, and a second semiconductor layer formed from the substrate side sequentially; a transparent insulating layer provided on the substrate side of the semiconductor light emitting layer; a first electrode part and a second electrode part provided on the substrate side of the transparent insulating layer in such a manner as being separated from each other, and joined to the metal wiring layer; a first contact part provided so as to pass through the transparent insulating layer and electrically connecting the first electrode part and the first semiconductor layer; and a second contact part provided so as to pass through the transparent insulating layer, the first semiconductor layer, and the active layer, and electr

Abstract: Surface-textured encapsulations for use with light emitting diodes. In an aspect, a light emitting diode apparatus is provided that includes a light emitting diode, and an encapsulation formed upon the light emitting diode and having a surface texture configured to extract light. In an aspect, a method includes encapsulating a light emitting diode with an encapsulation having a surface texture configured to extract light. In an aspect, a light emitting diode lamp is provided that includes a package, at least one light emitting diode disposed within the package, and an encapsulation formed upon the at least one light emitting diode having a surface texture configured to extract light. In another aspect, a method includes determining one or more regions of an encapsulation, the encapsulation configured to cover a light emitting diode, and surface-texturing each region of the encapsulation with one or more geometric features that are configured to extract light.

Abstract: This invention relates to optoelectronic devices of improved efficiency. In particular it relates to light emitting diodes, photodiodes and photovoltaics. By careful design of periodic microstructures, e.g. gratings, associated with such devices more efficient light generation or detection is achieved.

Abstract: There are provided a method of manufacturing a nitride semiconductor light emitting device and the nitride semiconductor light emitting device manufactured by the method, the method including: forming a light emitting structure by sequentially growing a first conductivity nitride layer, an active layer and a second conductivity type nitride layer on a preliminary substrate for nitride single crystal growth; separating the light emitting structure in accordance with a size of final light emitting device; forming a conductive substrate on the light emitting structure; polishing a bottom surface of the preliminary substrate to reduce a thickness of the preliminary substrate; forming uneven surface structures by machining the preliminary substrate; selectively removing the preliminary substrate to expose portions of the first conductivity type nitride layer; and forming electrodes on the portions of the first conductivity type nitride layer exposed by selectively removing the preliminary substrate.

Abstract: A Light-Emitting Diode (LED) includes a light-emitting structure having a passivation layer disposed on vertical sidewalls across a first doped layer, an active layer, and a second doped layer that completely covers at least the sidewalls of the active layer. The passivation layer is formed by plasma bombardment or ion implantation of the light-emitting structure. It protects the sidewalls during subsequent processing steps and prevents current leakage around the active layer.

Abstract: A light emitting diode for harsh environments includes a substantially transparent substrate, a semiconductor layer deposited on a bottom surface of the substrate, several bonding pads, coupled to the semiconductor layer, formed on the bottom surface of the substrate, and a micro post, formed on each bonding pad, for electrically connecting the light emitting diode to a printed circuit board. An underfill layer may be provided between the bottom surface of the substrate and the top surface of the printed circuit board, to reduce water infiltration under the light emitting diode substrate. Additionally, a diffuser may be mounted to a top surface of the light emitting diode substrate to diffuse the light emitted through the top surface.

Abstract: A light emitting apparatus includes a patterned conductive layer, a light emitting device on the patterned conductive layer, and a first light diffusion layer. The light emitting device and the patterned conductive layer are embedded in the first light diffusion layer. A method of forming such a light emitting apparatus is also disclosed.

Abstract: A semiconductor light emitting device is provided. The semiconductor light emitting device comprises a plurality of compound semiconductor layers including a first conductive semiconductor layer, an active layer and a second conductive semiconductor layer, and a layer of the plurality of compound semiconductor layers comprising a roughness comprising a sapphire material.

Abstract: Disclosed are a semiconductor light emitting device and a method of manufacturing the same. The method includes providing a substrate having first and second main surfaces opposing each other and forming a first uneven structure in the first main surface, forming a sacrificial layer on the first main surface of the substrate, forming a mask having open regions on the sacrificial layer so as to expose a portion of an upper surface of the sacrificial layer, forming a second uneven structure in the substrate by etching the sacrificial layer and the substrate through the open regions, removing the sacrificial layer and the mask from the substrate, and forming a light emitting stack on the first and second uneven structures of the substrate.

Abstract: Provided is a semiconductor light emitting device. The semiconductor light emitting device includes a conductive substrate, a p-type electrode disposed on the conductive substrate, a transparent electrode layer disposed on the p-type electrode, a light emitting structure comprising a p-type semiconductor layer, an active layer, and an n-type semiconductor layer, which are sequentially stacked on the transparent electrode layer, and an n-type electrode disposed on the n-type semiconductor layer. The light emitting structure is disposed on a top middle of the transparent electrode layer to allow a side of the light emitting structure to be spaced from an edge of the transparent electrode layer. The transparent electrode layer has an uneven surface at an outer portion of the light emitting structure.

Abstract: The high luminance semiconductor light emitting device comprises: a GaAs substrate structure including a GaAs layer (3), a first metal buffer layer (2) disposed on a surface of the GaAs layer, a first metal layer (1) disposed on the first metal buffer layer, and a second metal buffer layer (4) and a second metal layer (5) disposed at a back side of the GaAs layer; and a light emitting diode structure disposed on the GaAs substrate structure and including a third metal layer (12), a metal contact layer (11) disposed on the third metal layer, a p type cladding layer (10) disposed on the metal contact layer, a multi-quantum well layer (9) disposed on the p type cladding layer, an n type cladding layer (8) disposed on the multi-quantum well layer, and a window layer 7 disposed on the n type cladding layer, wherein the GaAs substrate structure and the light emitting diode structure are bonded by using the first metal layer (1) and the third metal layer (12).

Abstract: Embodiments provide a semiconductor light emitting device which comprises a first conductive semiconductor layer, an active layer on the first conductive semiconductor layer, a second conductive semiconductor layer on the active layer, and a semiconductor layer on the second conductive semiconductor layer, and comprising a plurality of a semiconductor structures apart from each other and microfacets.

Abstract: A semiconductor light emitting diode (LED) and a manufacturing method thereof are disclosed. The method for manufacturing a semiconductor light emitting diode (LED) includes: forming a light emission structure including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer on a substrate with prominences and depressions; removing the substrate from the light emission structure to expose a first concavoconvex portion corresponding to the prominences and depressions; forming a protection layer on the first concavoconvex portion; removing a portion of the protection layer to expose a convex portion of the first concavoconvex portion; and forming a second concavoconvex portion on the convex portion of the first concavoconvex portion.

Abstract: Epitaxial growth methods and devices are described that include a textured surface on a substrate. Geometry of the textured surface provides a reduced lattice mismatch between an epitaxial material and the substrate. Devices formed by the methods described exhibit better interfacial adhesion and lower defect density than devices formed without texture. Silicon substrates are shown with gallium nitride epitaxial growth and devices such as LEDs are formed within the gallium nitride.

Abstract: A light-emitting diode (LED) structure and a method for manufacturing the LED structure are disclosed for promoting the recognition rate of LED chips, wherein a roughness degree of the surface under a first electrode pad of a first conductivity type is made similar to that of the surface under a second electrode pad of a second conductivity type, so that the luster shown from the first electrode pad can be similar to that from the second electrode pad, thus resolving the poor recognition problem of wire-bonding machines caused by different lusters from the first and second electrode pads.

Abstract: A light emitting diode having a substrate, an electron injection layer, an active layer, a hole injection layer, a first pad electrically connected to the hole injection layer, and a second pad electrically connected to the electron injection layer. The hole injection layer includes an activated region and a patterned non-activated region. The first pad is disposed upon the non-activated region and the first pad and the non-activated region are overlapping in the vertical direction.

Abstract: The present invention provides a semiconductor light-emitting device. The light-emitting device comprises a first conductive clad layer, an active layer, and a second conductive clad layer sequentially formed on a substrate. In the light-emitting device, the substrate has one or more side patterns formed on an upper surface thereof while being joined to one or more edges of the upper surface. The side patterns consist of protrusions or depressions so as to scatter or diffract light to an upper portion or a lower portion of the light-emitting device.

Abstract: The present invention provides a light-emitting semiconductor device, which comprises a substrate having a surface formed with a plane and a plurality of protrusions out of the plane. The plane is on a crystalline orientation. The protrusion is provided with an outer surface consisting of a plurality of sidewall surfaces. The sidewall surfaces are substantially not on the crystalline orientation. The protrusion is formed with an outline edge extended from the bottom to the top of the protrusion from a side view. The outline edge comprises at least one turning point. A first conductive type semiconductor layer is above the surface of the substrate, an active layer is above the first conductive type semiconductor layer, and a second conductive type semiconductor layer is above the active layer.

Abstract: A light emitting device includes a substrate and an organic electroluminescent device. Inside the substrate, there are a plurality of micro-structures proceeded with fusing and then curing. The organic electroluminescent device is disposed on the substrate.

Abstract: The present invention discloses a quaternary vertical light emitting diode with double surface roughening and a manufacturing method thereof, where a Bragg reflective layer is formed on a substrate; a first type of epitaxial layer is formed on the Bragg reflective layer; a light emitting layer is formed on the first type of epitaxial layer; a second type of epitaxial layer is formed on the light emitting layer; a first GaP window layer with small circular holes or in a mesh structure is formed on the second type of epitaxial layer; a second GaP window layer with small circular holes or in a mesh structure is formed on the first GaP window layer; a first electrode is formed on the top surface of the second GaP window layer; and a second electrode is formed on the bottom surface of the GaAs substrate.

Abstract: A light-emitting diode comprises a light-emitting diode chip having a first semiconductor layer, a first electrode, an active layer formed on the first semiconductor layer, a second semiconductor layer formed on the active layer and a second electrode formed on the second semiconductor layer. The first semiconductor layer, the active layer, the second semiconductor layer and the second electrode sequentially compose a stacked multilayer. A blind hole penetrates the second electrode, the second semiconductor layer, the active layer and inside the first semiconductor layer. The first electrode is disposed on the first semiconductor layer inside the blind hole. A first supporting layer and a second supporting layer are respectively disposed on the first electrode and the second electrode, wherein the first supporting layer and the second supporting layer are separated from each other. A method for manufacturing the light-emitting diode is also provided in the disclosure.

Abstract: An LED package includes a substrate, an LED die, and an encapsulating layer. The LED die is arranged on the substrate. The encapsulating layer covers the LED die and at least a part of the substrate. The encapsulating layer includes a light dispersing element. A light scattering intensity of the light dispersing element is proportional to the light intensity of light generated by the LED die and illuminated at the encapsulating layer. A luminance at a center of the LED package is substantially identical to that at a circumference of the LED package.

Abstract: A high brightness III-Nitride based Light Emitting Diode (LED), comprising multiple surfaces covered by Zinc Oxide (ZnO) layers, wherein the ZnO layers are grown in a low temperature aqueous solution and each have a (0001) c-orientation and a top surface that is a (0001) plane.

Abstract: In at least one embodiment of the organic light-emitting component (10), the latter comprises a unipolar charge carrier balder layer (3), a first layer (1) and a second layer (2) which are applied to opposing sides of the charge carrier barrier layer (3) and are in each case formed of at least one organic material, and two ambipolar injection layers (4), which are applied to the sides of the first (1) and second layers (2) remote from the charge carrier barrier layer (3). Such an organic, light-emitting component (10) may be operated efficiently with alternating current.

Abstract: A light emitting device includes a substrate, a patterned light-scattering layer, and an electroluminescent device. The patterned light-scattering layer is disposed on a portion of the substrate. The patterned light-scattering layer has a bottom surface in contact with the substrate, a top surface opposite to the bottom surface, and a plurality of sidewalls connecting the bottom surface and the top surface. The electroluminescent device is at least disposed on the sidewalls.

Abstract: Provided is a GaN-based LED element having a novel structure for improving output by increasing light extraction efficiency.

Abstract: The first wavelength converting member, the light emitting element, and the second wavelength converting member are disposed in this order toward the opening of the recess portion on the bottom surface of the housing member through a light transmissive supporting member, and spaced away from the side surface of the recess portion. The first wavelength converting member is a plate shape member made of a composite of an inorganic binder made of an inorganic material and a fluorescent material. A light scattering surface is formed on at least a portion of the side surface of the recess portion, which is irradiated with the light emitted from the side surfaces of the wavelength converting member in parallel with the principal surface of the first wavelength converting member.