Abstract: A piezoelectric device having a piezoelectric film formed over a substrate through an electrode by vapor phase deposition using plasma, and constituted by columnar crystals of one or more perovskite oxides Pb(Tix, Zry, Mz)O3 (0<x<1, 0<y<1, 0?z<1, x+y+z=1) which extend nonparallel to the substrate. M represents one or more of Sn, Nb, Ta, Mo, W, Ir, Os, Pd, Pt, Re, Mn, Co, Ni, V, and Fe. The maximum diameters of the end faces of the columnar crystals are distributed from a value not exceeding 100 nm to a value of 500 nm or greater. The arithmetic average surface roughness of the columnar film is 10 nm or smaller, 20% or more of the columnar crystals have the maximum diameters not exceeding 100 nm, and 5% or more of the columnar crystals have the maximum diameters of 500 nm or greater.

Abstract: The piezoelectric element 20 of the invention comprises a pair of electrodes 2,3 and a piezoelectric ceramic 1 comprising as the major component a solid solution of the two components KNbO3 and BaTiO3. In the solid solution, the molar ratio of KNbO3 is 0.5-0.9 with respect to the total of the two components.

Abstract: Provided are a piezoelectric thin film including a lead-free ferroelectric material and exhibiting high piezoelectric performance comparable to that of lead zirconate titanate (PZT), and a method of manufacturing the piezoelectric thin film. The piezoelectric thin film of the present invention includes: a LaNiO3 film having a (001) orientation; an interface layer having a (001) orientation and composed of a compound represented by a chemical formula ABO3 (where A is represented by (Bi,Na)1-xCx (0?x?1), B is Ti or TiZr, and C is an alkali metal other than Na); and a (Bi,Na,Ba)TiO3 film having a (001) orientation. The LaNiO3 film, the interface layer, and the (Bi,Na,Ba)TiO3 film are laminated in this order.

Abstract: A piezoelectric ceramic which has a large value of coercive electric field and, in addition, which can be fired at low temperatures of 950° C. or lower, is provided. It has a composition represented by Pbx-a-dBiaM3d{M1b(M21/3Nb2/3)yZr1-b-y-zTiz}O3 where M1 and M2 represent, independently, at least one of Ni and Zn, and M3 represents at least one of Ba and Sr, 0.05?a?0.15, 0<b?0.075, 0?(a?2b), 0?d?0.1, 0.97?x?1.00, 0.020?y?0.250, and 0.398?z?0.512. It is preferable that M1 represents Ni, and M2 represents at least one of Ni and Zn. Moreover, it is preferable that Ni is in the state of being segregated.

Abstract: A method of manufacturing a ceramic includes forming a film which includes a complex oxide material having an oxygen octahedral structure and a paraelectric material having a catalytic effect for the complex oxide material in a mixed state, and performing a heat treatment to the film, wherein the paraelectric material is one of a layered catalytic substance which includes Si in the constituent elements and a layered catalytic substance which includes Si and Ge in the constituent elements. The heat treatment includes sintering and post-annealing. At least the post-annealing is performed in a pressurized atmosphere including at least one of oxygen and ozone. A ceramic is a complex oxide having an oxygen octahedral structure, and has Si and Ge in the oxygen octahedral structure.

Abstract: The invention provides a (Li, Na, K)(Nb, Ta, Sb)O3 type piezoelectric/electrostrictive ceramic composition excellent in the electric field-induced strain at the time of high electric field application. The piezoelectric/electrostrictive film of a piezoelectric/electrostrictive actuator is a sintered body of a piezoelectric/electrostrictive ceramic composition. The piezoelectric/electrostrictive ceramic composition comprises a perovskite type oxide comprising as A site elements, Li, Na, and K and as B site elements, Nb and Sb and having a ratio of the total number of atoms of the A site elements to the total number of atoms of the B site elements greater than 1 and not less than 1 mol % and not more than 10 mol % of the number of Sb atoms in the total number of atoms of the B site elements and a Mn compound added to said perovskite type oxide.

Abstract: A method of manufacturing a ceramic includes forming a film which includes a complex oxide material having an oxygen octahedral structure and a paraelectric material having a catalytic effect for the complex oxide material in a mixed state, and performing a heat treatment to the film, wherein the paraelectric material is one of a layered catalytic substance which includes Si in the constituent elements and a layered catalytic substance which includes Si and Ge in the constituent elements. The heat treatment includes sintering and post-annealing. At least the post-annealing is performed in a pressurized atmosphere including at least one of oxygen and ozone. A ceramic is a complex oxide having an oxygen octahedral structure, and has Si and Ge in the oxygen octahedral structure.

Abstract: A generator that collects oscillation energy to convert to electric energy, the generator including a support portion made of non-piezoelectric material, a piezoelectric body disposed on the support portion and having a polarization direction perpendicular to a longitudinal direction of the support portion, the piezoelectric body being configured to oscillate in an oscillating direction to generate the oscillation energy, the oscillating direction perpendicular to the polarization direction, a first electrode provided on a first surface of the piezoelectric body parallel to the polarization direction, a second electrode provided on a second surface of the piezoelectric body parallel to the polarization direction, and a weight disposed on a third surface of the piezoelectric body facing the support portion.

Abstract: A piezoelectric substance which is made of oxide with perovskite type structure which is made of ABO3, where a principal component of A is Pb, and principal components of B contain at least two kinds of elements among Nb, Mg, Zn, Sc, Cd, Ni, Mn, Co, Yb, In, and Fe, and Ti, characterized by being a uniaxial orientation crystal or a single crystal which has an a-domain and a c-domain of tetragonal.

Abstract: A piezoelectric ceramic composition contains main components represented by a general formula of [(Pb1-x-yCaxSry){Ti1-z(Zn1/2W1/2)z}O3], and x, y, and z satisfy 0?x?0.2 (preferably 0?x?0.15), 0?y?0.2 (preferably 0?y?0.1), 0.1?x+y?0.2, and 0.04?z?0.1. It is also preferable that the piezoelectric ceramic composition contains 0.05 weight part to 1.0 weight part of a Mn component calculated in terms of MnCO3 with respect to 100 weight parts of the main component. A piezoelectric part includes a piezoelectric ceramic element that is formed by the piezoelectric ceramic composition. It is thereby possible to realize a piezoelectric ceramic composition that can be fired at low temperature, that has a high Curie point Tc resistant to a reflow heating treatment on a lead-free solder, and that exhibits satisfactory piezoelectricity, and a piezoelectric part using this piezoelectric ceramic composition.

Abstract: Provided is a piezoelectric ceramic 1 containing a compound represented by the following general formula (1), as a main component and at least one element selected from Mn, Fe and Cu in an amount of 0.04 to 0.6% by mass based on the main component, and a vibrator 10 having the piezoelectric ceramic 1 and electrodes 2, 3. CaxBa1?xTiO3??(1) where, x satisfies 0.05?x?0.20.

Abstract: Apparatus including layer of polarizable material located between first and second electrodes. Polarizable material has block copolymeric composition including elastomeric domain blocks and conductive domain blocks. Method that includes providing layer of polarizable material having block copolymeric composition including elastomeric domain blocks and conductive domain blocks, first and second electrodes being on opposite surfaces of the layer. Method also includes applying voltage differential between electrodes, causing dimension of layer to change.

Abstract: A piezoelectric perovskite mixed oxide compound has the general formula (BiFeO3)x—(PbTiO3)1-x and contains up to 5 at % lanthanum or other rare earth substitution, in which x has a value in the range 0.5 to 0.9. Such compounds are capable of withstanding gas turbine operating temperatures and are suitable for use in sensing and actuation functions in aerospace and other applications.

Abstract: A ferroelectric film containing a perovskite type oxide represented by Formula (P) is formed on a substrate, which stands facing a target, by a sputtering technique under conditions of a height of a shield, which surrounds an outer periphery of the target on the substrate side in a non-contact state and comprises shielding layers superposed one upon another at intervals, such that a difference between a plasma potential and a floating potential is at most 35V, and under conditions such that a temperature of the substrate is at least 400° C.: (Pb1?x+?Mx) (ZryTi1?y)O—??(P) wherein M represents at least one kind of element selected from Bi and lanthanide elements, 0.05?x?0.4, and 0<y?0.7, the standard composition being such that ?=0, and z=3.

Abstract: In a compact formed by subjecting an ultrafine particle brittle material supplied on a substrate to mechanical impact force as a load, whereby the ultrafine particle brittle material is crushed and joined to each other, manganese is added into the ultrafine particle brittle material to form the compact.

Abstract: Provided are a piezoelectric material without using lead or an alkali metal, the piezoelectric material having a stable crystal structure in a wide temperature range, high insulation property, and high piezoelectric property, and a piezoelectric element using the piezoelectric material, in which the piezoelectric material is made of a metal oxide having a tetragonal crystal structure and expressed by Ba(SixGeyTiz)O3 (here, 0?x?1, 0?y?1, and 0?z?0.5), the piezoelectric element includes the piezoelectric material and a pair of electrodes sandwiching the piezoelectric material, and at least one of the pair of electrodes is made of SrRuO3 or Ni.

Abstract: A sensor or actuator includes a piezoelectric thin film device including a lower electrode, a piezoelectric thin film and an upper electrode, and a voltage detecting device connected between the lower and upper electrodes of the piezoelectric thin film device. The piezoelectric thin film is formed of an alkali niobium oxide-based perovskite material expressed by (K1-xNax)NbO3 (0<x<1), and a dependency of the piezoelectric constant d31 of the piezoelectric thin film on applied electric field [=|(d31 under 70 kV/cm)?(d31 under 7 kV/cm)|/|d31 under 70 kV/cm|] is 0.20 or less.

Abstract: A piezoelectric film formed above a Si substrate. The piezoelectric film is formed of a potassium sodium niobate expressed by a general formula (K,Na)NbO3 with perovskite structure. A film thickness of the piezoelectric film is within a range from 0.3 ?m to 10 ?m. An intermediate film is formed between the Si substrate and the piezoelectric film. The intermediate film generates a stress in a compressive direction in the piezoelectric film.

Abstract: To provide a multi-layer piezoelectric device having excellent durability in which the amount of displacement does not change even when the piezoelectric actuator is subjected to continuous operation over a long period of time under a high voltage and a high pressure, the multi-layer piezoelectric device comprises a stack formed by stacking piezoelectric layers and internal electrodes alternately one on another and external electrodes formed on a first side face and on a second side face of the stack, wherein one of the adjacent internal electrodes is connected to the external electrode formed on the first side face and the other internal electrode is connected to the external electrode formed on the second side face, while content of alkali metal in a range from 5 ppm to 300 ppm is contained.

Abstract: A method for driving a liquid drop ejector (1) equipped with a piezoelectric actuator (7) including a piezoelectric ceramic layer (6) having a size covering a plurality of pressurizing chambers (2). An arbitrary piezoelectric deformation region (8) of the liquid drop ejector (1) is deflected in one thickness direction and the opposite direction, respectively, by applying a driving voltage waveform including a first voltage (?VL) and an equivalent second voltage (+VL) of the opposite polarity in order to vary the volume of the pressurizing chambers (2) of a corresponding liquid drop ejecting portion (4), and a liquid drop is ejected through a communicating nozzle (3). Since gradual creep deformation of the inactive region (16) of the piezoelectric ceramic layer (6) is prevented, the ink drop ejection performance is maintained at a good level over a long term.

Abstract: A droplet ejecting head including: a pressure chamber connected to a nozzle hole; and a piezoelectric device having ceramic member provided with an electrode. The ceramic member is made from a solid solution containing bismuth ferrate, bismuth potassium titanate, and bismuth manganate.

Abstract: Manufacturing sintered bodies having microstructures including microscopic grains having a grain diameter of less than 5 ?m, intermediate grains having a grain diameter of 5 ?m or more and less than 15 ?m, and coarse grains having a grain diameter of 15 ?m or more and 100 ?m or less enables to obtain high electric characteristics. Chemical compounds including metal elements are mixed so that the ratio of the elements is a composition expressed by (Li, Na, K)(Nb, Ta)O3, the mixture is calcined and crushed to obtain calcined/crushed powder. The powder is sintered in a constant temperature keeping process wherein temperature is kept constantly at a predetermined temperature within a range from 800 to 900° C. for a predetermined period of time in a heating process, and then the powder is further sintered by raising temperature to firing temperature, thereby the piezoelectric materials having superior electric characteristics are manufactured.

Abstract: The subject invention pertains to a piezoelectric device structure for improved acoustic wave sensing and/or generation, and process for making same. The piezoelectric thin film field effect transducer can be a thin film transistor (TFT) with either a piezoelectric film gate or a composite gate having a dielectric film and a piezoelectric film. The TFT structure can be either a top gate device or a bottom gate device. In an embodiment, the piezoelectric device structure can be used to form an array of piezoelectric thin film field effect transducers. A TFT switch can drive each piezoelectric transducer in the array. The piezoelectric transducers can both generate and sense acoustic waves. In a sensing mode, a signal from an acoustic wave can be collected at a readout terminal of the piezoelectric transducer. In a generating mode, an excitation signal can be applied across the piezoelectric transducer while the switch is ‘on’.

Abstract: The present invention provides a piezoelectric single crystal device excellent in heat resistance and capable of stably maintaining the electromechanical coupling factor k31 in a lateral vibration mode at a high value of 50% or more without a decrease even in an operating environment in which the temperature changes from room temperature to a high temperature (specifically, 150° C.), and also provides a fabrication method thereof. Specifically, assuming that the [101] axis of a tetragonal system having the [001] axis as a C axis (with the largest lattice constant) is a polarization direction 3, a normal direction 1 to an edge face T of the piezoelectric device is within the solid-angle range of ±25° with respect to the [-101] axis substantially orthogonal to the polarization direction 3, the range including the [-101] axis.

Abstract: A piezoelectric thin film device according to the present invention comprises a lower electrode, a piezoelectric thin film and a upper electrode, in which the piezoelectric thin film is formed of an alkali niobium oxide-based perovskite material expressed by (K1-xNax)NbO3 (0<x<1), and in which a (001)KNN plane diffraction peak of the piezoelectric thin film indicates an angle 2? from 22.1° to 22.5° in an X-ray diffraction 2?/? measurement to a surface of the piezoelectric thin film, and the (001)KNN plane diffraction peak occupies 80% or more of diffraction peaks of the piezoelectric thin film.

Abstract: A method for manufacturing a piezoelectric film element includes foursteps. The first is to form a bottom electrode on a Si substrate. The second is to form a seed layer with a layered perovskite structure on the bottom electrode. The third is to form a Bi4Ti3O12—BaBi4Ti4O15 based piezoelectric film on the seed layer. The final step is to form an top electrode on the piezoelectric film.

Abstract: A perovskite-oxide lamination constituted by a substrate and one or tore first films of a first oxide of a perovskite type and one or more second films of a second oxide which are alternately formed over the substrate. The first oxide has a composition expressed as ABO3, the second oxide has a composition expressed as CDO3, each of A and C represents one or more A-site elements which are one or more metal elements, each of B and D represents one or more B-site elements which are one or more metal elements, O represents oxygen, and the second oxide is unable to be formed to have a perovskite crystal structure at normal pressure without a thickness limitation. The one or more first films and the one or more second films may contain inevitable impurities.

Abstract: The present invention relates to a piezoelectrical device whose electrode layers contain copper. The usage of copper in electrode layers is enabled by a debindering process, which is carried out by steam.

Abstract: Provided is a piezoelectric ceramic composition which enables the attainment of sufficiently high Qmax and good temperature characteristics of oscillation frequency F0 when applied in an oscillator utilizing third harmonic mode of thickness longitudinal vibration. The piezoelectric ceramic composition contains a composite oxide having a perovskite structure. The composite oxide has a composition expressed by the chemical formula (1), while satisfying 0.91???1.00, 0<??0.08, 0.125?x?0.300, 0.020?y?0.050, and 0.040?z?0.070 (Pb?Ln?)(Ti1?(x+y+z)ZrxMnyNbz)O3 ??(1) where Ln signifies at least one element selected from the group consisting of La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, and Lu.

Abstract: A perovskite oxide is represented by a general formula ABO3 A represents at least one kind of metal element forming an A site, B represents at least one kind of metal element forming a B site. The B site includes at least one kind of metal element B1 selected from an element group consisting of the IV group elements and at least one kind of metal element B2 selected from an element group consisting of the V and VI group elements, and at least a part of the metal element B2 is of the 0 to +4 valence.

Abstract: A method of manufacturing a ceramic includes forming a film which includes a complex oxide material having an oxygen octahedral structure and a paraelectric material having a catalytic effect for the complex oxide material in a mixed state, and performing a heat treatment to the film, wherein the paraelectric material is one of a layered catalytic substance which includes Si in the constituent elements and a layered catalytic substance which includes Si and Ge in the constituent elements. The heat treatment includes sintering and post-annealing. At least the post-annealing is performed in a pressurized atmosphere including at least one of oxygen and ozone. A ceramic is a complex oxide having an oxygen octahedral structure, and has Si and Ge in the oxygen octahedral structure.

Abstract: A method for producing a dielectric film, comprising: a coating step of coating a colloidal solution containing an organometallic compound containing a metal constituting a dielectric film containing at least a lead component to form a dielectric precursor film; a drying step of drying the dielectric precursor film; a degreasing step of degreasing the dielectric precursor film; and a sintering step of sintering the dielectric precursor film to form a dielectric film, and wherein the drying step includes a first drying step of heating the dielectric precursor film to a temperature lower than the boiling point of a solvent, which is a main solvent of the material, and holding the dielectric precursor film at the temperature for a certain period of time to dry the dielectric precursor film, and a second drying step of drying the dielectric precursor film at a temperature in the range of 140° C. to 170° C., the degreasing step is performed at a degreasing temperature of 350° C. to 450° C.

Abstract: An inorganic film formed of an inorganic material on a metal film having a surface including surface-oxidized areas. The surface-oxidized areas are surface oxidized to different degrees. For example, the surface-oxidized areas are one or more lowly-surface-oxidized areas and one or more highly-surface-oxidized areas. The inorganic film includes regions which are respectively formed on the surface-oxidized areas, and the regions have different crystal structures according to the different degrees of surface oxidation. For example, a patterned inorganic film constituted by one or more protruding portions arranged on one or more lowly-surface-oxidized areas of the surface of the metal film can be produced by removing the portions of the inorganic film formed on highly-surface-oxidized areas.

Abstract: A piezoelectric material of the invention includes a perovskite oxide (P) (which may contain inevitable impurities) represented by the formula below: Pba(Zrx, Tiy, Mb-x-y)bOc ??(P) (wherein M represents one or two or more metal elements; wherein 0<x<b, 0<y<b, 0?b-x-y; and wherein a molar ratio a:b:c is 1:1:3 as a standard; however, the molar ratio may be varied from the standard molar ratio within a range where a perovskite structure is obtained). The perovskite oxide (P) has a signal intensity ratio I(Pb4+)/I(Pb2+) between Pb4+ and Pb2+ of not less than 0.60 measured through XAFS.

Abstract: There is provided a piezoelectric ceramic composition that contains Na, Bi, Ti and Co wherein the composition ratio of Na, Bi, Ti and Co in terms of oxides thereof is in the following composition range (1): aNa2O-bBi2O3-cTiO2-dCoO??(1) where a, b, c and d are mole fractions; 0.03?a?0.042; 0.330?b?0.370; 0.580?c?0.620; 0<d?0.017; and a+b+c+d=1.

Abstract: Provided are a piezoelectric film, a piezoelectric film element, a liquid discharge head using the piezoelectric film element, and a liquid discharge apparatus. A piezoelectric film element that can be suitably used for a discharge pressure-generating element of a liquid discharge head is obtained by using an epitaxial oxide film composed of a perovskite composite oxide constituted according to a general formula ABO3 as a piezoelectric film. The epitaxial oxide film has at least an A domain and a B domain having a crystal orientation deviation with respect to each other. The crystal orientation deviation between the A domain and the B domain is less than 2°.

Abstract: Apparatus and method for providing high density component assemblies, such as electromechanical or electro-optical assemblies.

Abstract: A multilayer piezoelectric actuator and a liquid discharge head are provided which are equipped with dense piezoelectric ceramics having improved insulation performance. The multilayer piezoelectric actuator comprises a multilayered body comprising a plurality of piezoelectric ceramic layers containing a PZT phase as a main crystal phase; and an electrode layer containing Ag, which is disposed at least one of on the surface and in the interior of the multilayered body. A lattice constant c of c-axis of the PZT phase is 0.4085 nm to 0.4100 nm, and a ratio of the lattice constant c of the c-axis of the PZT phase and a lattice constant a of a-axis, namely, the ratio c/a, is 1.011 or more. A second phase containing Ag different from the PZT phase is not substantially contained in the piezoelectric ceramic layer. A Zn2SiO4 phase is contained at grain boundaries of the PZT phase, and a Pb2SiO4 phase is not substantially contained at the grain boundaries of the PZT phase.

Abstract: A piezoelectric body contains a ferroelectric substance phase having characteristics such that, in cases where an applied electric field is increased from the time free from electric field application, phase transition of the ferroelectric substance phase to a ferroelectric substance phase of a different crystal system occurs at least two times. The piezoelectric body should preferably be actuated under conditions such that a minimum applied electric field Emin and a maximum applied electric field Emax satisfy Formula (1): Emin<E1<Emax??(1) wherein the electric field E1 represents the electric field at which the first phase transition of the ferroelectric substance phase begins.

Abstract: Piezoelectric actuators having a composition of Pb1.00+x(Zr0.52Ti0.48)1.00?yO3Nby, where x>?0.02 and y>0 are described. The piezoelectric material can have a Perovskite, which can enable good bending action when a bias is applied across the actuator.

Abstract: The present invention provides a microfabricated ultrasonic transducer with curvature. The curvature is made possible by thinning the substrate such that it is flexible enough to be mounted on an assembly with the desired curvature. In one aspect of the invention, the substrate can contain electronic circuits. In another aspect, the assembly mounting can incorporate curved damping materials that serve to remove undesirable substrate modes.

Abstract: Provided are a composite for forming a ferroelectric thin film which is a colloidal solution applicable to the MOD method and capable of maintaining excellent dispersion stability and preservation stability of an organometallic compound over a long term, a ferroelectric thin film, a method of manufacturing a ferroelectric thin film, and a liquid-jet head. A composite for forming a ferroelectric thin film, which is made of a colloidal solution applicable to the MOD method containing an organometallic compound including metal constituting a ferroelectric thin film, and contains water other than water of crystallization in the organometallic compound is used when forming a ferroelectric thin film in accordance with the MOD method.

Abstract: In a piezoelectric device, a first electrode, a first piezoelectric film, a second piezoelectric film, and a second electrode are formed in this order on a first electrode formed above a surface of the substrate, and an intermediate electrode is arranged between the first and second piezoelectric films. Each of the first and second piezoelectric films has a thickness of 10 micrometers or smaller, and has a first surface facing toward the substrate and a second surface opposite to the first surface. At least one of the first and second surfaces has an arithmetic average surface roughness (Ra) of 0.5 micrometers or smaller.

Abstract: A piezoelectric element is provided that is equipped with a seed layer formed on a base substrate and a piezoelectric film formed on the seed layer. The seed layer is formed of a perovskite type piezoelectric material preferentially oriented to pseudo cubic (100). The piezoelectric film is formed of a relaxor material that has a perovskite type rhombohedral structure, and is preferentially oriented to pseudo cubic (100).

Abstract: An optical element satisfactory in transparency and characteristics as an optical modulation element, and a piezoelectric substance element satisfactory in precision and reproducibility as a fine element such as MEMS can be provided. The piezoelectric substance element includes, on a substrate, at least a first electrode, a piezoelectric substance film and a second electrode. The piezoelectric substance film does not contain a layer-structured boundary plane; the crystal phase constituting the piezoelectric substance film comprises at least two of a tetragonal, a rhombohedral, a pseudocubic, an orthorhombic and a monoclinic; and the piezoelectric substance film includes, in a portion in which a change in the composition is within a range of ±2%, a portion where a proportion of the different crystal phases changes gradually in a thickness direction of the film.

Abstract: A piezoelectric device constituted by a piezoelectric body and electrodes. The piezoelectric body is a monocrystalline piezoelectric film formed, above a substrate, of an inorganic crystalline compound containing a first ferroelectric crystal when no electric field is applied to the piezoelectric film, and having a characteristic that phase transition of at least a portion of the first ferroelectric crystal to a second ferroelectric crystal occurs when the electric field strength applied to the piezoelectric film is at or above a predetermined level E1, the first and second ferroelectric crystals correspond to different crystal systems, and the piezoelectric device is driven under a condition that the minimum strength Emin, the maximum strength Emax, and the predetermined level E1 of the applied electric field satisfy the inequalities, Emin<E1<Emax.

Abstract: To provide a multi-layer piezoelectric device having excellent durability in which the amount of displacement does not change even when the piezoelectric actuator is subjected to continuous operation over a long period of time under a high voltage and a high pressure, the multi-layer piezoelectric device comprises a stack formed by stacking piezoelectric layers and internal electrodes alternately one on another and external electrodes formed on a first side face and on a second side face of the stack, wherein one of the adjacent internal electrodes is connected to the external electrode formed on the first side face and the other internal electrode is connected to the external electrode formed on the second side face, while content of alkali metal in a range from 5 ppm to 300 ppm is contained.

Abstract: A method for producing a dielectric film, comprising: a coating step of coating a colloidal solution containing an organometallic compound containing a metal constituting a dielectric film containing at least a lead component to form a dielectric precursor film; a drying step of drying the dielectric precursor film; a degreasing step of degreasing the dielectric precursor film; and a firing step of firing the dielectric precursor film to form a dielectric film, and wherein the drying step includes a first drying step of heating the dielectric precursor film to a temperature lower than the boiling point of a solvent, which is a main solvent of the material, and holding the dielectric precursor film at the temperature for a certain period of time to dry the dielectric precursor film, and a second drying step of drying the dielectric precursor film at a temperature in the range of 140° C., to 170° C., the degreasing step is performed at a degreasing temperature of 350° C. to 450° C.

Abstract: A piezoelectric ceramic whose resonance frequency temperature characteristic can be easily adjusted is provided. It contains first and second parts (11 and 12) which can be alternately stacked layers. The first and second parts (11 and 12) are each composed of a compound having a bismuth layer structure, such as a complex oxide containing at least Sr, Bi, and Nb, and have degrees of c-axis orientation different from each other. Since the resonance frequency temperature characteristics change according to the degree of orientation, the first and second parts (11 and 12) having different degrees of orientation are appropriately combined so that the resonance frequency temperature characteristics of the piezoelectric ceramic (2) as a whole is easily adjusted.

Abstract: Provided is a highly durable laminated piezoelectric element wherein a stress generated at a portion, i.e., the boundary between an active region and inactive region, is reduced. A method for manufacturing such laminated piezoelectric element is also provided. The laminated piezoelectric element has a laminated structure (15) wherein a plurality of piezoelectric layers (11) and internal electrode layers (13) are alternately laminated. The piezoelectric layer (11) contains a metal element other than those elements constituting piezoelectric ceramic, i.e., the main component of the piezoelectric layer (11), and at a portion (11a) of the piezoelectric layer (11) at the vicinity of an end of the internal electrode layer (13), metal particles having a metal element as a main component exist. The content of the metal at the portion (11a) at the vicinity of the end is higher than the content of a compound of the metal element and a nonmetal element.