Abstract: A piezoelectric/electrostrictive porcelain composition which exhibits superior piezoelectric/electrostrictive characteristics without containing lead (Pb) is provided. A main component of the piezoelectric/electrostrictive composition is a binary solid solution represented by the general formula (1): (1?n)(Ag1?a?b?cLiaNabKc)(Nb1?x?y?zTaxSbyVz)O3+nM1M2O3; wherein 0?a?0.2, 0?b?0.95, 0?c?0.95, 0<(1?a?b ?c)?1, 0?x?0.5, 0?y?0.2, 0?z?0.2, 0?(y+z)?0.3, 0?n?0.2, and wherein M1 and M2 are combinations of metal which satisfy pretermined conditions.

Abstract: A piezoelectric resonator element and method of manufacturing same are provided. The piezoelectric resonator element having a lower electrode, a piezoelectric substance layer, and an upper electrode disposed in this order on a substrate with an air layer between the substrate and the lower electrode, and having a laminated structure of the lower electrode, the piezoelectric substance layer, and the upper electrode in at least a part of the piezoelectric resonator element, wherein internal stress of the piezoelectric substance layer is ?300 MPa to 90 MPa.

Abstract: A method for producing a piezoelectric thin-film resonator includes forming a sacrificial layer on a substrate, performing a plasma treatment on the sacrificial layer so that the surface roughness (Ra) of end surface portions of the sacrificial layer is about 5 nm or less, forming a strip-shaped dielectric film so as to be continuously disposed on the surface of the substrate and the end surface portions and the principal surface of the sacrificial layer, forming a piezoelectric thin-film area including a lower electrode, an upper electrode, and a piezoelectric thin-film disposed therebetween so that a portion of the lower electrode and a portion of the upper electrode surface each other at an area on the dielectric film, the area being disposed on the upper portion of the sacrificial layer, and removing the sacrificial layer to form an air-gap between the substrate and the dielectric film.

Abstract: A multi-dimensional transducer array is provided. The multi-dimensional transducer array includes a plurality of elements. First and second kerfs acoustically separate the elements. A first width of the first kerf is larger than a second width of the second kerf.

Abstract: An actuator for a fuel injector is disclosed. The actuator has a piezo element, a casing, and at least one end plate. The casing is fabricated through a deep draw process, has bellows, and is configured to house the piezo element. The at least one end plate is hermetically connected to an end portion of the casing.

Abstract: A piezoelectric element includes an electrode disposed on at least one of the front and back surfaces of a piezoelectric material prepared by molding a mixture containing a Pb component, a Zr component, a Ti component, a Sr component, a Nb component, and a Zn component and then firing the molded product. When the piezoelectric material is represented by the general formula Pb(ZraTi1-a)O3+bSrO+cNbO2.5+dZnO, the relative amounts of the respective components, for example, satisfy the relationships, a=0.51, b=2.0×10?2, c=1.50×10?2, d=0.5×10?2, and c/d=3.0.

Abstract: A piezoelectric substance has a substrate, an electrode formed on the substrate, and a piezoelectric film formed on the electrode. The piezoelectric film is formed of crystals having a main phase of (NaxKyLiz)NbO3 (0<x<1, 0<y<1, 0?z?0.1, x+y+z=1). The piezoelectric film is a polycrystalline thin film preferentially oriented to either or both of <001> and <110> crystalline axes in the direction normal to the substrate surface, and the axes of its crystals oriented to each crystalline axis are also formed in the same direction in the in-plane direction of the substrate.

Abstract: An energy-trapping strip piezoelectric vibrator utilizing a third harmonic overtone of a thickness shear mode is provided. A piezoelectric vibrator 1 has a strip piezoelectric ceramic substrate 2 polarized in a longitudinal direction, and first and second excitation electrodes 3 and 4 provided on first and second principal surfaces 2a and 2b of the piezoelectric ceramic substrate 2. An excitation region 5 including a piezoelectric vibration portion that includes a portion where the first and second excitation electrodes 3 and 4 overlap and that utilizes harmonics of the thickness shear mode is formed. A region around the piezoelectric vibration portion is set as a non-excitation region. At least a region of the non-excitation region neighboring the piezoelectric vibration portion is a region having the same polarization axis direction as the excitation region 5 and a relatively small polarization degree or is an unpolarized region.

Abstract: A piezoelectric element having a piezoelectric film and one pair of electrodes being in contact with the piezoelectric film on a substrate, wherein the piezoelectric film has a structure in which a lead-containing piezoelectric film and a lead-free piezoelectric film are laminated, and in the piezoelectric film, a layer furthest from the substrate and a layer closest to the substrate are lead-free piezoelectric films.

Abstract: A piezoelectric film laminate includes a lithium tantalate substrate, and a lead zirconate titanate niobate layer formed above the lithium tantalate substrate.

Abstract: A dielectric element includes a lower electrode layer provided on a substrate, a dielectric layer provided on the lower electrode layer and an upper electrode layer provided on the dielectric layer. The dielectric layer has a first dielectric layer provided on a side of the lower electrode layer, and a second dielectric layer provided on a side of the upper electrode layer. The second dielectric layer is a layer comprised mainly of an oxide including four or more kinds of metal element components, and the first dielectric layer does not substantially include at least one component selected from metal elements included in the oxide layer of the second dielectric layer and is comprised mainly of an oxide including at least three components selected from the remaining metal elements without substantially including Ti and Zr elements.

Abstract: A piezoelectric device includes a piezoelectric film, and electrodes through which an electric field can be applied to the piezoelectric film along the thickness direction of the piezoelectric film. The piezoelectric film contains a ferroelectric phase in which the thickness direction and a normal of a plane determined by the spontaneous-polarization axis and the [010] axis makes an angle ?m satisfying the condition that ?45 degrees<?m<+45 degrees and ?m?0 degrees. Further, the spontaneous-polarization axis or the [010] axis may be perpendicular to the thickness direction of the piezoelectric film.

Abstract: Embodiments of making an energy harvesting device are described. In one embodiment, a case and integrated piezoelectric cantilever to harvest vibration energy from an environment being sensed is produced via a print forming method injection molding method. The cantilever device consists of a piezoelectric material member, and a proof mass of high density material coupled to the piezoelectric member. The print forming method is used to build up the base and walls of the device as well as the neutral layers of the piezoelectric member. Metal layers are printed to form the electrode layers of the piezoelectric member and the electrical contact portions of the device. Passive components can also be formed as part of the layers of the device. The entire assembly can be encapsulated in plastic.

Abstract: A piezoelectric body contains a ferroelectric substance phase having characteristics such that, in cases where an applied electric field is increased from the time free from electric field application, phase transition of the ferroelectric substance phase to a ferroelectric substance phase of a different crystal system occurs at least two times. The piezoelectric body should preferably be actuated under conditions such that a minimum applied electric field Emin and a maximum applied electric field Emax satisfy Formula (1): Emin<E1<Emax ??(1) wherein the electric field E1 represents the electric field at which the first phase transition of the ferroelectric substance phase begins.

Abstract: A piezoelectric actuator 1 includes a piezoelectric element 2, which has a pair of electrodes formed on the surface of a piezoelectric ceramic member, as a drive source. The piezoelectric actuator 1 satisfies at least one of the following requirements (a) to (c): (a) the variation width WC in an apparent dynamic capacity C [F] due to a change in temperature should fall within ±11% over a specific temperature range from ?30° C. to 80° C.; (b) the variation width WL in a displacement L [?m] due to a change in temperature should fall within ±14% over the specific temperature range from ?30° C. to 80° C.; and (c) the variation width WL/C in a quotient L/C due to a change in temperature should fall within ±12% over the specific temperature range from ?30° C. to 80° C., wherein C [F] denotes the apparent dynamic capacity and L [?m] denotes the displacement.

Abstract: A polymer actuator comprising a conductive powder compact comprising a conductive polymer and a dopant, an ion donor, a work electrode, and a counter electrode, whereby it contracts or extends when voltage is applied between the work electrode and the counter electrode.

Abstract: A piezoelectric/electrostrictive device is provided, including a substrate, an electrode layer adhering to the surface of the substrate, and a piezoelectric/electrostrictive layer adhering to the electrode layer. The electrode layer is deformed by high-temperature creep. A method for manufacturing the piezoelectric/electrostrictive device is provided including a step of cooling the piezoelectric/electrostrictive device, after firing, at a temperature decreasing rate of at least the rate of natural cooling. The cooling step includes a sub-step of holding the piezoelectric/electrostrictive device at a constant holding temperature that is lower than the firing temperature. The holding temperature is within a range of temperatures at which high-temperature creep occurs in the metal of the electrode layer so that residual stress in the piezoelectric/electrostrictive layer can be reduced.

Abstract: Energy harvesting systems and methods that use multiple piezoelectric generators connected to the same energy harvesting circuit with minimal or no energy loss. The piezoelectric energy harvesting system may include individual diode bridge circuits electrically connected to the outgoing wires from each piezoelectric generator. The piezoelectric energy harvesting system may include multiple subsystems each having one or more individual diode bridges electrically connected to the outgoing wires from multiple piezoelectric generators. Multiple subsystems, each having multiple piezoelectric generators and a diode bridge, may be electrically connected to the same energy harvesting circuit. The use of multiple piezoelectric generators connected to the same energy harvesting circuit results in improved energy harvesting capabilities, and a simplified and low cost energy harvesting system.

Abstract: A piezoelectric component includes a stack of ceramic layers and electrode layers between ceramic layers in the stack. The electrode layers contain copper and the ceramic layers contain lead-zirconate-titanate that is doped with Nb. The ceramic layers are made from a material having a composition of Pb0.988V0.012(Zr0.504+xTi0.472?xNb0.024)O3.000, where ?0.05?x?0.05.

Abstract: A liquid ejecting head includes a flow channel substrate having a pressure generating chamber communicating with a nozzle aperture through which liquid is ejected, and a piezoelectric element disposed on one surface of the flow channel substrate. The piezoelectric element includes a common electrode, a piezoelectric layer, and an individual electrode. The piezoelectric layer is made of lead zirconate titanate having a rhombohedral or monoclinic crystal structure preferentially oriented in the (100) plane. The saturated polarization Pm and the residual polarization Pr of the piezoelectric layer satisfy the relationship 33%?2Pr/2Pm?46%.

Abstract: A method for manufacturing piezoelectric actuator which includes a piezoelectric layer formed of a piezoelectric ceramics material and having a drive area, a first electrode and a second electrode arranged on both surfaces of the piezoelectric material layer respectively each at portion corresponding to the drive area, and a ceramics layer formed of a ceramics material and stacked to face the surface of the piezoelectric material layer on which the first electrode is arranged, the method including: forming a stacked body which includes the piezoelectric material layer, the ceramics layer, and the first electrode, and sintering the stacked body; forming the second electrode on the other surface, of the piezoelectric material layer after the sintering, not facing the ceramics layer; and forming elastic layers having a lower coefficient of elasticity than that of the piezoelectric material layer on both surfaces respectively of the stacked body after the sintering.

Abstract: A piezoelectric element includes: a base substrate; a lower electrode formed above the base substrate; a ferroelectric layer formed above the lower electrode; and an upper electrode formed above the ferroelectric layer, wherein an angle of a corner defined by a side surface of the ferroelectric layer and a top surface of the base substrate is between 45° and 75°.

Abstract: A piezoelectric element includes: a base substrate; a lower electrode formed above the base substrate; a piezoelectric layer that is formed above the lower electrode, and formed from a perovskite type oxide; and an upper electrode formed above the piezoelectric layer, wherein the piezoelectric layer is oriented to (100) crystal orientation in the pseudo-cubic crystal expression, and a crystal of the perovskite type oxide in a direction parallel to a lower surface of the piezoelectric layer has a lattice constant greater than a lattice constant of the crystal of the perovskite type oxide in a direction orthogonal to the lower surface of the piezoelectric layer.

Abstract: A piezoceramic multilayer actuator (10) has a plurality of piezoceramic layers (12) and a security layer (20) disposed between two piezoceramic layers (12). The piezoceramic layers (12) have a piezoceramic first material sintered at a sintering temperature. The security layer (20) has a second material (32) and particles (30) at least partially embedded in the second material (32). The particles (30) have a third material different from the first material and different from the second material (32). An adhesion between the third material and the first material is weaker than an adhesion between the second material (32) and the first material.

Abstract: A laminated piezoelectric element according to the present invention includes a plurality of unit laminates and a plurality of adhesive layers. The unit laminates are stacked together. Each of the unit laminates includes a plurality of piezoelectric ceramic layers and a plurality of internal electrode layers that are alternately laminated with the piezoelectric ceramic layers in the lamination direction of the unit laminate. Each of the adhesive layers is formed between adjacent two of the unit laminates to bond the two unit laminates together. Further, each of the adhesive layers has a thickness of 1 ?m or less and an adhesive strength of 1.3 MPa or higher.

Abstract: A piezoelectric element includes: a first electrode formed above a base substrate; a piezoelectric layer formed above the first electrode; and a second electrode formed above the piezoelectric layer, wherein the piezoelectric layer has a plurality of voids.

Abstract: In a method of manufacturing a piezoceramic multilayer actuator (10), a plurality of green layers is provided, wherein the green layers are to be converted to piezoceramic layers (12) with a piezoceramic material in a subsequent step of heating. A security layer material mixture with a second material (32) and particles (30) embedded in the second material (32) is provided, wherein the particles (30) have a third material different from the first material and different from the second material (32). The security layer material mixture is laminated between two piezoceramic layers (12), thereby forming a green stack. The green stack is heated to a sintering temperature, wherein the green layers are converted to the piezoceramic layers (12), and wherein a chemical reaction of the third material degrades the mechanical connection of the piezoceramic layers (12) by the security layer (20).

Abstract: The invention provides a piezoelectric film having a large piezoelectric property, and a piezoelectric element, a liquid discharge head and a liquid discharge apparatus utilizing the same. The piezoelectric film is formed by an epitaxial oxide of <100> orientation having at least a tetragonal crystal structure, in which the oxide is a perovskite type composite oxide represented by a general formula ABO3 and contains at least domains C, D and E of [100] orientation having mutual deviation in crystal direction, where the angular deviation between [100] directions in domains C and D, in domains D and E, in domains C and E and in domains D and E are respectively 5° or less, 5° or less, 0.3° or less, and 0.3° or more, and the angular deviation between [001] directions in domains C and E and in domains D and E are respectively 1.0° or more, and 1.0° or more.

Abstract: A piezoelectric element includes a base substrate; a lower electrode formed above the base substrate; a piezoelectric layer that is formed above the lower electrode, and formed from a perovskite type oxide expressed by a general formula ABO3, where A includes lead (Pb), and B includes zirconium (Zr) and titanium (Ti); and an upper electrode formed above the piezoelectric layer, wherein the piezoelectric layer has at least two regions having different compositions of Zr with respect to Zr and Ti.

Abstract: There is disclosed a piezoelectric/electrostrictive body which has superior piezoelectric/electrostrictive properties and which exhibits a sufficient durability even in a case where a flexural displacement is repeated a large number of times. A piezoelectric/electrostrictive body 30 is constituted of a large number of crystal grains 31 having the piezoelectric/electrostrictive properties in the form of a film or a layer having one or more layers. A number ratio of crystal grains 32, a part of which is exposed to at least one of interfaces 35a, 35b between the bodies and the outside in a thickness direction, is 80% or more of a large number of crystal grains 31 observed in an arbitrary section in the thickness direction.

Abstract: There is disclosed a piezoelectric/electrostrictive body which has superior piezoelectric/electrostrictive properties and which exhibits a sufficient durability even in a case where a flexural displacement is repeated a large number of times. A piezoelectric/electrostrictive body is constituted of a large number of crystal grains having the piezoelectric/electrostrictive properties in the form of a film or a layer having one or more layers. A number ratio of crystal grains whose grain diameters W in a width direction are longer than grain diameters T in a thickness direction is 70% or more of a large number of crystal grains observed in an arbitrary section in the thickness direction.

Abstract: A head assembly includes a suspension having a gimbal, a flexible printed wiring sheet having a plurality of conductor patterns and adhered to the suspension, first and second piezoelectric actuators mounted on the gimbal, and a head slider mounted on the first and second piezoelectric actuators. The first and second piezoelectric actuators are adhered to the gimbal at end portion adhesion portions symmetrical with respect to the center of pivotal motion thereof and are adhered to the head slider at end portion adhesion portions on the opposite side disposed symmetrically with respect to the center of pivotal motion similarly. Consequently, when a voltage is applied to the first and second piezoelectric actuators through the flexible printed wiring sheet, a couple of forces can be generated which vary the posture of the head slider only in one direction around the center of pivotal motion.

Abstract: A SAW device comprises a single crystal piezo-electric strate (made, for example, of LiTaO3 or LiNbO3), and an interdigital transducer (IDT) formed of a material mainly containing Al and disposed on the piezo-electric substrate. The piezo-electric strate contains an additive (for example, Fe, Mn, Cu, Ti), and an orientation rotated by an angle in a range of 42° to 48° (more preferably 46°±0.3°) from a Y-axis toward a Z-axis about an X-axis. The IDT presents a normalized thickness h/? (h: thickness of electrode, and ?: spacing between digits of the IDT) of 7% to 11%. A more appropriate substrate cut angle can be shown for the SAW device which employs a piezo-electric substrate containing an additive, to improve the electric characteristics thereof.

Abstract: A manufacturing method of a liquid jet head having increased the durability and reliability thereof by preventing delamination of a vibration plate is provided. At least the following two steps are included: a vibration plate forming step which includes at least a step of forming a zirconium layer on one side of a passage-forming substrate by sputtering so that a degrees of orientation to a (002) plane of the surface becomes equal to 80% or more, as well as forming an insulation film made of zirconium oxide and constituting a part of the vibration plate by subjecting the zirconium layer to thermal oxidation; and a piezoelectric element forming step of forming piezoelectric elements on the vibration plate.

Abstract: A piezo actuator in a monolithic multilayer design, has at least one piezoelectrically active stack element, wherein the stack element has stacked piezoceramic layers made of piezoceramic material and electrode layers arranged between the piezoceramic layers, at least one piezoelectrically inactive terminating region arranged above the stack element, and at least one junction region arranged between the stack element and the terminating region, wherein the stack element, the terminating region and the junction region are connected to one another to form a monolithic total stack. The junction region has stacked piezoceramic layers and electrode layers arranged between the piezoceramic layers, and the piezoceramic layers and the electrode layers are in a form and are arranged on one another such that in the stack direction of the junction region one piezoelectrically active area per junction piezoceramic layer is successively changed from piezoceramic layer to piezoceramic layer.

Abstract: The invention relates to a piezoelectric ceramic material having the general composition ABO3 with at least a proportion of the PZT ceramic having a composition of the invention with Cu cations. The proportion of Zr and Ti cations is selected based upon the content of Cu cations, such that the ceramic material is tailored to the morphotropic phase boundary. The invention further discloses a method for producing a ceramic material of this type.

Abstract: A load-bearing structural member has a continuous structural material with piezoelectric material particles mixed in throughout. The structural material may be any of a variety of suitable materials, such as polymer materials, composite materials, ceramic materials, or concrete. The piezoelectric material particles may be used for evaluating the soundness of the structural member, such as in quality control or structural health monitoring processes. The structural member may include one or more conductive pickups used for receiving signals from the structural member. The signals may be induced by introducing ultrasonic signals or vibrational resonance signals into the structural member. The response from such induced signals may be used for quality control purposes or structural health monitoring.

Abstract: A piezoelectric actuator, for example for actuating a mechanical component, has a multilayered structure of piezoelectric layers and, in a piezoelectrically active region, can be acted on with an electrical voltage by means of internal electrodes that are situated between the layers. The layer structure of the piezoelectric actuator includes inactive regions; at least the top part or bottom part, as an inactive region without internal electrodes, is comprised of a material whose dielectric constant is less than the dielectric constant of the active region.

Abstract: A piezoelectric single crystal device is provided exhibiting excellent piezoelectric properties, within a specific high-temperature range of Trrt° C. to (Trt?20)° C., where Trt represents a transformation temperature between a pseudocubic system and a tetragonal system. Specifically, the piezoelectric single crystal device is composed of a single crystal having a composition represented by [Pb(Mg,Nb)O3](1-X)·[PbTiO3](X), where X is within the range of 0.26 to 0.29 and having a complex perovskite structure, wherein a specific inductive capacity at 25° C. is 5,000 or more, and a specific inductive capacity at the transformation temperature between a pseudocubic system and a tetragonal system of the above-described single crystal is 2.5 times or more larger than the specific inductive capacity at 25° C.

Abstract: A piezoelectric element is provided that is equipped with a seed layer formed on a base substrate and a piezoelectric film formed on the seed layer. The seed layer is formed of a perovskite type piezoelectric material preferentially oriented to pseudo cubic (100). The piezoelectric film is formed of a relaxor material that has a perovskite type rhombohedral structure, and is preferentially oriented to pseudo cubic (100).

Abstract: A method of forming a piezoelectric resonator having a resonation structure is provided. According to the method, it is possible to simplify a manufacturing process of the piezoelectric resonator and raise the yield of the resonation structure from a green body in the manufacturing process. The method includes preparing a base structure, a protection structure, and a green body. The green body has polarized electrodes on selected two different surfaces, respectively. The green body has crystals having polarization axes aligned parallel to each other toward a predetermined direction. Resonant plates are formed by cutting the green body and the polarized electrodes to a predetermined width. Resonant electrodes are formed on the resonant plates. Resonation structures are formed by cutting the resonant electrodes and the resonant plates. Finally, a piezoelectric resonator is formed by interposing the resonation structure between the protection structure and the base structure.

Abstract: Microelectromechanical systems with structures having piezoelectric actuators are described. The structures each have a body that supports piezoelectric islands. The piezoelectric islands have a first surface and a second opposite surface. The piezoelectric islands can be formed, in part, by forming cuts into a thick layer of piezoelectric material, attaching the cut piezoelectric layer to a body having etched features and grinding the piezoelectric layer to a thickness that is less than the depths of the cuts. Conductive material can be formed on the piezoelectric layer to form electrodes.

Abstract: A multilayer piezoelectric element has a laminate body in which a plurality of piezoelectric bodies and a plurality of internal electrodes are alternately laminated and sintered. The plurality of internal electrodes comprise a first electrode and a second electrode. The laminate body is provided with a metal oxide layer formed of a material with a melting point higher than a sintering temperature of the piezoelectric bodies. The laminate body has an active portion in which the first electrode and the second electrode are arranged to overlap in a laminate direction of the laminate body, and inactive portions in which the first electrode and the second electrode are arranged not to overlap in the laminate direction of the laminate body. The inactive portions are provided on both sides of the active portion.

Abstract: A piezoelectric contains comprises a plurality of piezoelectric particles made from a piezoelectric material such as lead titanate zirconate and a dielectric made from a dielectric material, such as a composite perovskite compound, having a higher dielectric constant then the piezoelectric material, the dielectric existing in gaps between the piezoelectric particles. When poling to produce a piezoelectric ceramic, the poling is uniformly performed, and nearly all of the electric field is applied to the piezoelectric particles. Thus, the dispersion of the piezoelectric properties can be reduced, and the piezoelectric properties can be enhanced.

Abstract: An optical fibre switch (10) includes an optical fibre conduit (12). A transducer (16) is carried on the conduit (12), the transducer (16) converting input energy of one form into mechanical energy so that the application of an external stimulus causes a change in condition of the transducer (16) which imparts that change in condition to the conduit (12). An input energy applying arrangement (20) is arranged on the transducer (16) for applying the external stimulus.

Abstract: A piezoelectric ceramic composition includes: a composite oxide, as a main component thereof, represented by the composition formula, Pba[(Zn1/3Nb2/3)xTiyZrz]O3, wherein a, x, y and z satisfy the following relations, 0.96?a?1.03, 0.005?x?0.047, 0.42?y?0.53, 0.45?z?0.56, and x+y+z=1; and the following additives in the indicated percentages by mass in relation to the main component, Cu as a first additive, in a content ?, in terms of Cu2O, falling within a range 0<??0.5%; at least one of Dy, Nd, Eu, Gd, Tb, Ho and Er, as a second additive, in a content ?, in terms of oxide, falling within a range 0<??0.3%; and at least one of Ta, Nb, W and Sb, as a third additive, in a content ?, in terms of oxide, falling within a range 0<??0.6%.

Abstract: A piezoelectric ceramic composition includes: a composite oxide, as a main component thereof, represented by the composition formula, Pba[(Zn1/3Nb2/3)xTiyZrz]O3, wherein a, x, y and z satisfy the following relations, 0.96?a?1.03, 0.005?x?0.047, 0.42?y?0.53, 0.45?z?0.56, and x+y+z=1, and the following additives in the indicated percentages by mass in relation to the main component, Cu as a first additive, in a content ?, in terms of Cu2O, falling within a range 0<??0.5%; at least one of Li, Co, Ni, Ga and Mg, as a second additive, in a content ?, in terms of carbonate for Li, falling within a range 0<??0.1%, in a content ?1, in terms of oxide for Co, Ni and Ga, falling within a range 0<?1?0.2%, and in a content ?2, in terms of carbonate for Mg, falling within a range 0<?2?0.2%; and at least one of Ta, Nb, W and Sb, as a third additive, in a content ?, in terms of oxide, falling within a range 0<??0.6%.

Abstract: A method of forming a high density thick piezoelectric layer and a piezoelectric device the same. The method of forming the thick piezoelectric layer includes: forming a seed layer on a substrate by coating a sol including a piezoelectric material; primary heat-treating the seed layer; forming the thick piezoelectric layer by coating a paste that includes a piezoelectric material on the seed layer using a screen printing method; and secondary heat-treating the thick piezoelectric layer at a temperature higher than the primary heat-treating temperature. The piezoelectric material included in the sol has a composition identical or similar to the composition of the piezoelectric material included in the paste. The density of the thick piezoelectric layer is increased by particles of the piezoelectric material that penetrate into the thick piezoelectric layer from the seed layer in the secondary heat-treating, and thus, a high density thick piezoelectric layer can be formed.

Abstract: A piezoelectric/electrostrictive material having a nonstoichiometric composition represented by a general formula (1): (1?x)(BiaNabTiO3+?)?x(KcNbO3+?) ??(1) wherein 0.01?x<0.08, a<0.5, 1.01?(a/b)?1.08, 0.92?(a+b)/c<0.99, and 0.9?c?1.1, and ??0 when ?=0 and ??0 when ?=0.

Abstract: Disclosed are a piezoelectric element, which has a high withstand voltage and a longer durability life, a manufacturing method of the piezoelectric element, a liquid-jet head, a manufacturing method of the liquid-jet head, and a liquid-jet apparatus. The manufacturing method of a piezoelectric element includes the steps of: forming a piezoelectric layer by forming, on the lower electrode, a piezoelectric precursor film in which Pb, Zr and Ti are contained and the composition ratio of Pb, Zr and Ti becomes Pb/(Zr+Ti)=1.0 to 1.3 after the piezoelectric precursor film has been baked, and to which at least any one dopant selected from the group consisting of manganese, nickel and strontium is doped, and by then baking the piezoelectric. precursor film for half an hour to three hours at 650 to 750° C.; and forming an upper electrode on the piezoelectric layer.