Discharge Devices Having A Thermionic Or Emissive Cathode Patents (Class 313/310)
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Patent number: 8314539Abstract: A field electron emitter includes a thin film layer including a carbon nanotube (“CNT”) disposed on a substrate, wherein the thin film layer includes nucleic acid.Type: GrantFiled: July 31, 2009Date of Patent: November 20, 2012Assignees: Samsung Electronics Co., Ltd., Korea University Industrial & Academic Collaboration FoundationInventors: Yoon-chul Son, Yong-chul Kim, Jeong-na Heo, Byeong-kwon Ju
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Publication number: 20120280609Abstract: A system collects a source of electrons allowing for internal space charge build-up and hence internal self-electric field build-up that results in self-emission at a predetermined location (needle) in the system using components of: a conducting medium at one end of the structure denoted as the needle having a work function of less than Y eV (typical absolute values 3 to 4 eV) acting like a cathode and allowing for field emission; a conducting rod between the needle and cup to transport collected electrons with work function greater than X eV; an annular dielectric insulator, plug, with rod passing through acts as an electrical and mechanical barrier for mounting and as a barrier for pressure differentials; a source of electrons to provide electrons into the cup portion of the assembly acting like an anode; a beam drift tube to house and enable electron transport to the cup-rod assembly, the surface of the cup and rod have a work function greater than X eV; the plug with rod passing through seals and termType: ApplicationFiled: May 4, 2011Publication date: November 8, 2012Applicants: Nevada,Inventor: Robert A. Schill, JR.
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Patent number: 8299700Abstract: An electron emitting element of the present invention includes an electron acceleration layer provided between an electrode substrate and a thin-film electrode, which electron acceleration layer includes (a) conductive fine particles and (b) insulating fine particles having an average particle diameter greater than that of the conductive fine particles. The electron emitting element satisfies the following relational expression: 0.3x+3.9?y?75, where x (nm) is an average particle diameter of the insulating fine particles, and y (nm) is a thickness of the thin-film electrode 3. Such a configuration allows modification of the thickness of the thin-film electrode with respect to the size of the insulating particles, thereby ensuring electrical conduction and allowing sufficient current to flow inside the element. As a result, stable emission of ballistic electrons from the thin-film electrode is possible.Type: GrantFiled: February 3, 2010Date of Patent: October 30, 2012Assignee: Sharp Kabushiki KaishaInventors: Tadashi Iwamatsu, Ayae Nagaoka, Hiroyuki Hirakawa, Yasuo Imura
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Patent number: 8294348Abstract: Provided are a field emission electrode, a method of manufacturing the field emission electrode, and a field emission device including the field emission electrode. The field emission electrode may include a substrate, carbon nanotubes formed on the substrate, and a conductive layer formed on at least a portion of the surface of the substrate. Conductive nanoparticles may be attached to the external walls of the carbon nanotubes.Type: GrantFiled: December 20, 2007Date of Patent: October 23, 2012Assignee: Samsung Electronics Co., Ltd.Inventors: Yo-sep Min, Eun-ju Bae, Wan-jun Park
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Patent number: 8294354Abstract: The present invention relates to a field emission light source device, which includes: a base substrate; at least one cathode strip, disposed over the base substrate; at least one emissive protrusion, disposed over the cathode strip and electrically connected to the cathode strip; an insulating layer, disposed over the cathode strip and having at least one opening to allow the emissive protrusion to protrude out of the opening; at least one anode strip, disposed over the insulating layer, where the cathode strip and the anode strip are arranged into an m×n matrix and the at least one anode strip individually has an impacted surface corresponding to the emissive protrude; and a phosphor layer disposed over the impacted surface. Accordingly, the present invention can enhance light utilization efficiency of a field emission light source device.Type: GrantFiled: April 13, 2011Date of Patent: October 23, 2012Assignee: Tatung CompanyInventors: Tzung-Han Yang, Chi-Tsung Lo
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Patent number: 8278815Abstract: In accordance with the invention, there are field emission light emitting devices and methods of making them. The field emission light emitting device can include a plurality of spacers, each connecting a substantially transparent substrate to a backing substrate. The device can also include a plurality of pixels, wherein each of the plurality of pixels can include one or snore first electrodes disposed over the substantially transparent substrate, a light emitting layer disposed over each of the one or more first electrodes, and one or more second electrodes disposed over the backing substrate, wherein the one or more second electrodes and the one or more first electrode are disposed at a predetermined gap in a low pressure region. Each of the plurality of pixels can further include one or more nanocylinder electron emitter arrays disposed over each of the one or more second electrodes.Type: GrantFiled: July 22, 2011Date of Patent: October 2, 2012Assignee: Xerox CorporationInventors: David H. Pan, Fa-Gung Fan
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Patent number: 8272914Abstract: Provided are a field emission electrode, a method of manufacturing the field emission electrode, and a field emission device including the field emission electrode. The field emission electrode may include a substrate, carbon nanotubes formed on the substrate, and a conductive layer formed on at least a portion of the surface of the substrate. Conductive nanoparticles may be attached to the external walls of the carbon nanotubes.Type: GrantFiled: September 9, 2011Date of Patent: September 25, 2012Assignee: Samsung Electronics Co., Ltd.Inventors: Yo-sep Min, Eun-ju Bae, Wan-jun Park
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Patent number: 8274205Abstract: The system and method provided herein for limiting the effects of arcing in field-type electron emitter arrays improves the robustness of such arrays. Field-type electron emitter arrays generally have a substrate, an insulator, and a gating electrode. By including a resistive substance in the gate of the emitter array, arcing events may be isolated to a single emitter such that the remaining emitters of an array can continue electron emission and/or the short circuit current of the arc can be limited.Type: GrantFiled: December 5, 2006Date of Patent: September 25, 2012Assignee: General Electric CompanyInventors: Colin R. Wilson, Ji-Ung Lee
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Publication number: 20120212157Abstract: A planar filament comprising two bonding pads and a non-linear filament connected between the two bonding pads. The planar filament may be wider in the center to increase filament life. The planar filament can form a double spiral-serpentine shape. The planar filament may be mounted on a substrate for easier handling and placement. Voltage can be used to create an electrical current through the filament, and can result in the emission of electrons from the filament. The planar filament can be utilized in an x-ray tube.Type: ApplicationFiled: August 15, 2011Publication date: August 23, 2012Applicant: Moxtek, Inc.Inventors: Sterling W. Cornaby, Erik C. Bard
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Patent number: 8247971Abstract: A planar filament comprising two bonding pads and a non-linear filament connected between the two bonding pads. The planar filament may be wider in the center to increase filament life. The planar filament can form a double spiral-serpentine shape. The planar filament may be mounted on a substrate for easier handling and placement. Voltage can be used to create an electrical current through the filament, and can result in the emission of electrons from the filament. The planar filament can be utilized in an x-ray tube.Type: GrantFiled: August 15, 2011Date of Patent: August 21, 2012Assignee: Moxtek, Inc.Inventors: Erik C. Bard, Sterling W. Cornaby
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Patent number: 8242676Abstract: A field emission device, a field emission display device, and a method for manufacturing the same are disclosed. The field emission device includes: i) a substrate; ii) an electrode positioned on the substrate; iii) a mask layer positioned on the electrode and including one or more openings; and iv) a plurality of nanostructures positioned on the electrode via the openings and formed to extend radially. The plurality of nanostructures may be applied to emit an electron upon receiving a voltage from the electrode.Type: GrantFiled: June 23, 2009Date of Patent: August 14, 2012Assignee: LG Display Co., Ltd.Inventors: Yong-Jin Kim, Jin-Kyoung Yoo, Young-Joon Hong, Gyu-Chul Yi, Chul-Ho Lee
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Patent number: 8237347Abstract: A field emission device includes an insulative substrate, an electron pulling electrode, a secondary electron emission layer, a first dielectric layer, a cathode electrode, and an electron emission layer. The electron pulling electrode is located on a surface of the insulative substrate. The secondary electron emission layer is located on a surface of the electron pulling electrode. The cathode electrode is located apart from the electron pulling electrode by the first dielectric layer. The cathode electrode has a surface oriented to the electron pulling electrode and defines a first opening as an electron output portion. The electron emission layer is located on the surface of the cathode electrode and oriented to the electron pulling electrode.Type: GrantFiled: December 3, 2010Date of Patent: August 7, 2012Assignees: Tsinghua University, Hon Hai Precision Industry Co., Ltd.Inventors: Peng Liu, Duan-Liang Zhou, Pi-Jin Chen, Zhao-Fu Hu, Cai-Lin Guo, Bing-Chu Du, Shou-Shan Fan
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Patent number: 8232712Abstract: To provide a small electron gun capable of keeping a high vacuum pressure used for an electron microscope and an electron-beam drawing apparatus. An electron gun constituted by a nonevaporative getter pump, a heater, a filament, and an electron-source positioning mechanism is provided with an opening for rough exhausting and its automatically opening/closing valve, and means for ionizing and decomposing an inert gas or a compound gas for the nonevaporative getter pump. It is possible to keep a high vacuum pressure of 10?10 Torr without requiring an ion pump by using a small electron gun having a height and a width of approximately 15 cm while emitting electrons from the electron gun.Type: GrantFiled: August 4, 2009Date of Patent: July 31, 2012Assignee: Hitachi I High-Technologies CorporationInventors: Soichi Katagiri, Takashi Ohshima
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Patent number: 8232711Abstract: A surface emission type electron source including a first electrode having a planar form, a second electrode having a planar form facing the first electrode, an electron passage layer disposed between the first electrode and the second electrode, an insulator or semiconductor layer between the second electrode and the electron passage layer, and a power source part configured to apply a voltage to the second electrode and the first electrode. The electron passage layer includes plural quantum wires extending in a first direction from the first electrode to the second electrode. The quantum wires are made of silicon and spaced apart from each other at predetermined intervals, and electrons are emitted from a front surface of the second electrode. Protrusions protruding toward leading ends of the quantum wires are formed on a back surface of the second electrode at positions corresponding to the quantum wires.Type: GrantFiled: April 23, 2008Date of Patent: July 31, 2012Assignee: Crestec CorporationInventors: Akira Kojima, Hideyuki Ohyi
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Patent number: 8227970Abstract: A thermionic emission device, in particular for use in an x-ray tube, has an indirectly heated primary emitter that is fashioned as a flat emitter with an unstructured primary emission surface, and a heating emitter that is fashioned as a flat emitter with a structured heat emission surface. The primary emitter and the heating emitter each has at least two terminal lugs, and the primary emission surface and the heat emission surface are aligned essentially parallel to one another. The emission device provides an optimally high quality of the focal spot with a simple design and, given high thermal load, an unwanted widening or defocusing of the electron beam is avoided by the terminal lugs of the primary emitter being aligned essentially perpendicular to the primary emission surface and not protruding beyond the primary emission surface in the lateral direction.Type: GrantFiled: January 21, 2010Date of Patent: July 24, 2012Assignee: Siemens AktiengesellschaftInventor: Joerg Freudenberger
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Patent number: 8217366Abstract: Provided are a carbon ion generating device and a tumor treatment apparatus using the same. The carbon ion generating device includes a carbon nanostructure, a carbon emitting structure, an ionizing structure, and an accelerator. The carbon emitting structure is configured to induce an emission of carbon atoms from one end of the carbon nanostructure. The ionizing structure is configured to ionize the emitted carbon atoms. The accelerator is configured to accelerate the ionized carbon atoms.Type: GrantFiled: July 29, 2010Date of Patent: July 10, 2012Assignee: Electronics and Telecommunications Research InstituteInventors: Moon-Youn Jung, Nam Soo Myung, Hyun Woo Song, Hyeon-Bong Pyo
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Publication number: 20120169209Abstract: The present disclosure provides a field emission device. The field emission device includes an insulating substrate having a first surface, a first electrode, a second electrode, at least one cathode emitter and a secondary electron emitter. The first electrode and the second electrode are spaced from each other and are located on the first surface of the insulating substrate. The cathode emitter is electrically connected to the first electrode and spaced from the second electrode. A secondary electron emitter is spaced from the cathode emitter. The secondary electron emitter has an electron emitting surface exposed to the cathode emitter. A secondary electron emitter is spaced from the cathode emitter. The cathode emitter is oriented toward the secondary electron emitter.Type: ApplicationFiled: June 2, 2011Publication date: July 5, 2012Applicants: HON HAI PRECISION INDUSTRY CO., LTD., TSINGHUA UNIVERSITYInventors: PENG LIU, DUAN-LIANG ZHOU, PI-JIN CHEN, SHOU-SHAN FAN
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Publication number: 20120169222Abstract: A field emission device includes an insulating substrate, a number of first electrode down-leads, a number of second electrode down-leads, and a number of electron emission units. The first electrode down-leads are set an angle relative to the second electrode down-leads to define a number of cells. Each electron emission unit is located in each cell and includes a first electrode, a second electrode, and a plurality of electron emitters. The second electrode extends surrounding the first electrode. The plurality of electron emitters located on and electrically connected to at least one of the first electrode and the second electrode. A field emission display is also provided.Type: ApplicationFiled: June 9, 2011Publication date: July 5, 2012Applicants: HON HAI PRECISION INDUSTRY CO., LTD., TSINGHUA UNIVERSITYInventors: PENG LIU, SHOU-SHAN FAN
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Publication number: 20120169210Abstract: An electron source is provided that operates at lower temperature and has a low work function and a narrower energy width. The electron source includes a porcelain insulator, two conductive terminals connected to the porcelain insulator, a filament formed between the conductive terminals, and a <100> orientation single crystal rod of at least one metal selected from the group consisting of tungsten, molybdenum, tantalum and rhenium connected to the filament. The rod has an electron-emitting face formed in at its tip region with its {100} crystal face exposed. The rod further includes a diffusion source in its central region that is made of a composite oxide formed from barium oxide and scandium oxide wherein the proportion of barium oxide being 50 mol % or more of BaO and the proportion of scandium oxide being 10 to 50 mol % as Sc2O3 when the mixed oxide is prepared.Type: ApplicationFiled: September 24, 2010Publication date: July 5, 2012Applicant: DENKI KAGAKU KOGYO KABUSHIKI KAISHAInventor: Toshiyuki Morishita
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Publication number: 20120153819Abstract: In an electrode having a structure in which a coil is wound around an electrode rod, an ignition performance is ensured while preventing abnormal discharge and sputtering, an appropriate electrode temperature is obtained during drive, and having this operation maintained even if the lamp is repeatedly turned on and off. A discharge lamp electrode (30) having an electrode rod (10) and a coil (20) wound around a discharge portion (11) of the electrode rod includes a first welding portion (41) in which a front end of the coil is welded to the discharge portion, a second welding portion (42) in which a rear end of the coil is welded to the discharge portion, and a weld-joining portion (50) in which at least a pair of adjacent coil portions in windings of the coil are welded to each other.Type: ApplicationFiled: September 1, 2010Publication date: June 21, 2012Applicant: IWASAKI ELECTRIC CO., LTD.Inventors: Yasuhisa Matsumoto, Kouji Komata
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Publication number: 20120153802Abstract: A field emission cathode device includes a cathode substrate, a gate electrode, a first dielectric layer, a cathode electrode, and an electron emission layer. The gate electrode is located on a surface of the cathode substrate. The first dielectric layer is located on a surface of the gate electrode and defines a first opening to expose part of the gate electrode. The cathode electrode is spaced from the gate electrode through the first dielectric layer defining a second opening in alignment with the first opening. A field emission display using the field emission cathode device is also related.Type: ApplicationFiled: April 6, 2011Publication date: June 21, 2012Applicants: HON HAI PRECISION INDUSTRY CO., LTD., TSINGHUA UNIVERSITYInventors: JIE TANG, BING-CHU DU, SHOU-SHAN FAN
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Patent number: 8198794Abstract: A method comprising patterning a substrate to form exposed regions of the substrate sized to deter entangled growth of carbon nanotubes thereon and growing vertically aligned nanotubes on the exposed regions of the substrate.Type: GrantFiled: July 22, 2010Date of Patent: June 12, 2012Assignee: Indian Institute of Technology BombayInventors: Devi Shanker Misra, Kiran Shankar Hazra
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Patent number: 8188645Abstract: A hot cathode includes: a hollow external conductor; a hollow internal conductor which is placed coaxially inside the external conductor; and a connection conductor which electrically connects tip end portions of the conductors. A heating current is folded back through the connection conductor to flow in opposite directions in the external conductor and the internal conductor.Type: GrantFiled: July 29, 2009Date of Patent: May 29, 2012Assignee: Nissin Ion Equipment Co., Ltd.Inventor: Naoki Miyamoto
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Patent number: 8183756Abstract: A thermionic electron emitter (1) is proposed comprising an emitter part (2) with a substantially flat electron emission surface (3) and a bordering surface (5) adjacent thereto. In order to better absorb main stress loads (L) induced by external forces, the emitter part is provided with an anisotropic polycrystalline material having a crystal grain structure of elongated interlocked grains the longitudinal direction (G) of which is oriented substantially perpendicular to the direction (L) of the main stress loads occurring under normal operating conditions.Type: GrantFiled: July 18, 2008Date of Patent: May 22, 2012Assignee: Koninklijke Philips Electronics NVInventors: Zoryana Terletska, Stefan Hauttmann
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Patent number: 8172634Abstract: To provide a manufacturing method of a field emission cathode, which method exerts no adverse effect on element characteristics at the time when etching is performed with an ion beam. A sacrificial layer 4 made of a thermosetting resin is formed on a gate electrode layer 3. An opening section 5 is formed in the sacrificial layer 4 and the gate electrode layer 3 by irradiating a focused ion beam, and a hole section 6 is formed by etching the insulating layer 2 by using the sacrificial layer 4 and the gate electrode layer 3 as a mask. An emitter electrode 8 is formed in the hole section 6, and the emitter material 7 on the sacrificial layer 4 is removed together with the sacrificial layer 4 on the gate electrode layer 3.Type: GrantFiled: December 2, 2010Date of Patent: May 8, 2012Assignee: Honda Motor Co., Ltd.Inventors: Mitsutaka Nishijima, Kenichi Toya, Takashi Iwasa
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Publication number: 20120091881Abstract: The present invention provides an electron emitting device that includes a cathode, and a gate onto which electrons field-emitted from the cathode are irradiated. The gate includes at least a layer containing molybdenum and oxygen provided at a portion onto which the electrons field-emitted from the cathode are irradiated. The layer has peaks in a range of 397 eV through 401 eV, a range of 414 eV through 418 eV, a range of 534 eV through 538 eV, and a range of 540 eV through 547 eV, respectively, in a spectrum measured by electron energy loss spectroscopy using a transmission electron microscope.Type: ApplicationFiled: October 3, 2011Publication date: April 19, 2012Applicant: CANON KABUSHIKI KAISHAInventors: Eiji Ozaki, Taiko Motoi, Ryoji Fujiwara, Akiko Kitao
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Patent number: 8159118Abstract: An electron gun includes the following: a primary thermionic electron source, a secondary thermionic electron source and a focusing electrode disposed within a first housing that includes one or more reference members adjustably attached to a housing support connected to a first platform; an anode and one or more focusing coils disposed within a second housing comprising one or more insulating members adjustably connected to the first platform; and one or more deflection coils disposed within a third housing connected to the second housing and located opposite said first housing.Type: GrantFiled: November 2, 2005Date of Patent: April 17, 2012Assignee: United Technologies CorporationInventors: Viktor A. Tymashov, Oleg L. Zhdanov, Sergiy I. Ryabenko, Andriy A. Tsepkalov, Steven M. Burns
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Patent number: 8154185Abstract: Provided are electron emitters based upon diamondoid monolayers, preferably self-assembled higher diamondoid monolayers. High intensity electron emission has been demonstrated employing such diamondoid monolayers, particularly when the monolayers are comprised of higher diamondoids. The application of such diamondoid monolayers can alter the band structure of substrates, as well as emit monochromatic electrons, and the high intensity electron emissions can also greatly improve the efficiency of field-effect electron emitters as applied to industrial and commercial applications.Type: GrantFiled: February 12, 2007Date of Patent: April 10, 2012Assignees: The Board of Trustees of the Leland Stanford Junior University, The Regents of the University of CaliforniaInventors: Wanli Yang, Jason D. Fabbri, Nicholas A. Melosh, Zahid Hussain, Zhi-Xun Shen
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Publication number: 20120074874Abstract: The present invention provides an electron emitting element, comprising: a first electrode; an insulating fine particle layer formed on the first electrode and composed of insulating fine particles; and a second electrode formed on the insulating fine particle layer, wherein the insulating fine particle layer is provided with recesses formed in a surface thereof, the surface facing the second electrode, the recesses each having a depth smaller than a thickness of the insulating fine particle layer, and when a voltage is applied between the first electrode and the second electrode, electrons provided from the first electrode are accelerated in the insulating fine particle layer to be emitted though the second electrode.Type: ApplicationFiled: February 23, 2011Publication date: March 29, 2012Inventors: Kanako HIRATA, Hiroyuki HIRAKAWA, Ayae NAGAOKA, Yasuo IMURA, Tadashi IWAMATSU
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Patent number: 8143776Abstract: An image display apparatus includes a rear plate including an electron-emitting device; and a luminescent screen including a plurality of light-emitting members, a plurality of anode electrodes positioned so as to overlap the light-emitting members, a partition wall member positioned between the light-emitting members adjacent to each other, a stripe-shaped resistance member electrically connecting the anode electrodes adjacent to each other and being positioned on the partition wall member, and a feeding electrode electrically connecting the resistance member to a power supply, wherein the feeding electrode is, on a mesh-shaped base adjacent to the partition wall member, in contact with the resistance member and a terminal of the power supply circuit.Type: GrantFiled: August 4, 2010Date of Patent: March 27, 2012Assignee: Canon Kabushiki KaishaInventor: Ginjirou Toyoguchi
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Publication number: 20120062100Abstract: A thermionic electron emission device includes an insulating substrate and one or more lattices located on the insulating substrate. Each lattice includes a first, second, third and fourth electrode down-leads located on the insulating substrate to define an area. A thermionic electron emission unit is located in the area. The thermionic electron emission unit includes a first electrode, a second electrode, and a thermionic electron emitter. The thermionic electron emitter includes a carbon nanotube film structure. The carbon nanotube film structure includes a carbon nanotube film. The carbon nanotube film includes a number of carbon nanotubes joined end to end along axial directions of the carbon nanotubes by contacting with each other directly.Type: ApplicationFiled: November 21, 2011Publication date: March 15, 2012Applicants: HON HAI PRECISION INDUSTRY CO., LTD., TSINGHUA UNIVERSITYInventors: PENG LIU, LIANG LIU, KAI-LI JIANG, SHOU-SHAN FAN
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Patent number: 8125131Abstract: Provided are a nano filament structure and a method of forming the nano filament structure. The nano filament structure includes a first layer disposed on a substrate, a second layer having a gap of nanometer size disposed on the first layer, a catalyst layer interposed between the first layer and the second layer, and a nano filament. One end of the nano filament is in contact with the catalyst layer and grows by penetrating the gap of the second layer.Type: GrantFiled: June 18, 2009Date of Patent: February 28, 2012Assignee: Samsung Electronics Co., Ltd.Inventors: Subramanya Mayya Kolake, In-Seok Yeo, Xiao Feng Wang
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Patent number: 8125132Abstract: A display apparatus comprises: a rear plate which has an electron-emitting device; a face plate which has an anode electrode and a potential defining electrode; and a plate spacer which is opposite to the anode electrode and the potential defining electrode, between the rear plate and the face plate. An insulative base member of the spacer has a recessed portion which opposes to the anode electrode, the potential defining electrode, and a portion of the face plate between the anode electrode and the potential defining electrode. Thus, electric discharges between the spacer and the anode electrode and between the spacer and the potential defining electrode can be suppressed.Type: GrantFiled: August 18, 2010Date of Patent: February 28, 2012Assignee: Canon Kabushiki KaishaInventors: Akira Hayama, Koichi Tsunoda
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Publication number: 20120046597Abstract: The invention relates to an electrode arrangement (1) for generating a non-thermal plasma, comprising: a layer-shaped first electrode (2) made of an electrically conductive material, a layer-shaped second electrode (4) made of an electrically conductive material, wherein the second electrode (4) is electrically insulated from the first electrode (2), and a dielectric barrier (3) being arranged between the first electrode (2) and the second electrode (4), so that the non-thermal plasma is generated by a dielectric barrier discharge. The inventive electrode arrangement is characterized in that at least one of the first electrode (2) and the second electrode (4) comprises several perforations which are distributed over the electrode.Type: ApplicationFiled: March 13, 2009Publication date: February 23, 2012Applicant: Max-Planck-Gesellschaft Zur Forderung der Wissenschaften e.VInventors: Gregor Eugen Morfill, Bernd Steffes, Tetsuji Shimizu
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Publication number: 20120032576Abstract: An electron source includes a back contact surface having a means for attaching a power source to the back contact surface. The electron source also includes a layer comprising platinum in direct contact with the back contact surface, a composite layer of single-walled carbon nanotubes embedded in platinum in direct contact with the layer comprising platinum. The electron source also includes a nanocrystalline diamond layer in direct contact with the composite layer. The nanocrystalline diamond layer is doped with boron. A portion of the back contact surface is removed to reveal the underlying platinum. The electron source is contained in an evacuable container.Type: ApplicationFiled: August 5, 2011Publication date: February 9, 2012Applicant: LOS ALAMOS NATIONAL SECURITY, LLC.Inventors: Roger Philips Shurter, David James Devlin, Nathan Andrew Moody, Jose Martin Taccetti, Steven John Russell
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Publication number: 20120019122Abstract: A method comprising patterning a substrate to form exposed regions of the substrate sized to deter entangled growth of carbon nanotubes thereon and growing vertically aligned nanotubes on the exposed regions of the substrate.Type: ApplicationFiled: July 22, 2010Publication date: January 26, 2012Inventors: Devi Shankar MISRA, Kiran Shankar Hazra
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Patent number: 8102108Abstract: A method of fabricating an electron source having a self-aligned gate aperture is disclosed. A substrate is deposited on a first conductive layer. Over the first conductive layer an emitter layer is deposited. The emitter layer includes one or a plurality of spaced-apart nano-structures and a solid surface with nano-structures protruding above the surface. An insulator is conformally deposited over the emitter layer surface and forms a post from each protruding nano-structure. A second conductive layer is deposited over the insulator and the second conductive layer and the insulator are removed from the nano-structures such that apertures are formed in the second conductive layer and at least the ends of the nano-structures are exposed at the centers of said apertures.Type: GrantFiled: October 30, 2007Date of Patent: January 24, 2012Inventor: Zhidan Li Tolt
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Patent number: 8089205Abstract: A wiring board has a substrate having a groove on its surface, a first wiring placed in the groove, a plurality of bonding members located at mutually separated positions and each of which bonds the first wiring and the substrate. A gap is located between the first wiring and the surface of the groove.Type: GrantFiled: May 31, 2007Date of Patent: January 3, 2012Assignee: Canon Kabushiki KaishaInventors: Yoshio Suzuki, Kazuya Ishiwata
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Patent number: 8083393Abstract: Disclosed are LED lamp assemblies that are substantially inseparable. The LED lamp assemblies use discrete components that are individually manufactured and then assembled in a manner that substantially prevents disassembly or disengagement of components. An interference fit can be used to substantially secure components of the LED lamp assemblies. Bonding techniques can also be used, including adhesive and solvent bonds, as well as thermal bonds, including sonic bonds.Type: GrantFiled: December 14, 2007Date of Patent: December 27, 2011Assignee: 1 Energy Solutions, Inc.Inventor: Jing Jing Yu
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Patent number: 8084927Abstract: A thermal electron emitter includes at least one carbon nanotube twisted wire and a plurality of electron emission particles mixed with the twisted wire. The carbon nanotube twisted wire comprises a plurality of carbon nanotubes. A work function of the electron emission particles is lower than the work function of the carbon nanotubes. A thermal electron emission device using the thermal electron emitter is also related.Type: GrantFiled: March 12, 2009Date of Patent: December 27, 2011Assignees: Tsinghua University, Hon Hai Precision Industry Co., Ltd.Inventors: Lin Xiao, Liang Liu, Chang-Hong Liu, Shou-Shan Fan
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Publication number: 20110309737Abstract: The electron-emitting device is configured such that an inclination angle ?2 of a lower portion from a height-direction intermediate portion to the lower end is larger than the inclination angle ?1 of an upper portion from a lower edge of the concave portion to a height-direction intermediate portion. And, an electric resistance of a lower cathode portion which is a portion of the lower portion of the cathode is larger than that of an upper cathode portion which is a portion of the upper portion of the cathode.Type: ApplicationFiled: May 24, 2011Publication date: December 22, 2011Applicant: CANON KABUSHIKI KAISHAInventors: Satoshi Tsutsui, Toshiharu Sumiya, Takahiro Hachisu
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Publication number: 20110310611Abstract: A backlight unit includes a first substrate including an anode electrode; and a second substrate including a cathode electrode and an electron emission element, wherein the cathode electrode includes a terminal portion and at least one electrode strip extending from the terminal portion, and the electrode strip includes an electron emission portion on which the electron emission element is mounted and a junction portion which is disposed between the terminal portion and the electron emission portion, and wherein the closer the junction portion is to the terminal portion the greater the width of the junction portion is.Type: ApplicationFiled: June 8, 2011Publication date: December 22, 2011Applicant: SAMSUNG ELECTRONICS CO., LTD.Inventors: Yu-jeong CHO, Hun-su KIM, Bok-chun YUN
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Patent number: 8080929Abstract: A method of fabricating a composite field emission source is provided. A first stage of film-forming process is performed by using RF magnetron sputtering, so as to form a nano structure film on a substrate, in which the nano structure film is a petal-like structure composed of a plurality of nano graphite walls. Afterward, a second stage of film-forming process is performed for increasing carbon accumulation amount on the nano structure film. Therefore, the composite field emission source with high strength and nano coral-like structures can be obtained, whereby improving the effect and life of electric field emission.Type: GrantFiled: May 27, 2008Date of Patent: December 20, 2011Assignees: Tatung Company, Tatung UniversityInventors: Jian-Min Jeng, Jyi-Tsong Lo, Wen-Ching Shih, Wei-Lung Tasi
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Patent number: 8080928Abstract: A convex portion 2 having a specific sectional shape is formed on a substrate 1 between electrodes 3 and 4, and a gap 6 is formed on a conductive film 5, connecting the electrodes 3 and 4, on the convex portion 2, whereby the distance from the center of the gap 6 serving as a electron-emitting portion to the stagnation point is reduced so as to enhance an electron emission efficiency.Type: GrantFiled: September 12, 2008Date of Patent: December 20, 2011Assignee: Canon Kabushiki KaishaInventors: Tamayo Hiroki, Hisanobu Azuma, Jun Iba
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Publication number: 20110305314Abstract: A field emission type electron emitting device includes a cathode including a mixture of a lanthanum oxide and a molybdenum oxide.Type: ApplicationFiled: June 8, 2011Publication date: December 15, 2011Applicant: CANON KABUSHIKI KAISHAInventors: Shin Kitamura, Naofumi Aoki, Yoichi Murakami, Kota Aoki, Takeo Tsukamoto
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Patent number: 8076832Abstract: A method of forming an electron emitter structure for use in a field emission display, or as a field emission backlight for an LCD display is provided. The electron emitter structure is formed by depositing mask elements onto an laminar Al substrate, and etching the Al substrate chemically through gaps between the mask elements, such that a spikes are formed on the substrate. These spikes are then covered with an electron emitter material. The spikes can be formed with a desired pitch/height ratio.Type: GrantFiled: May 16, 2008Date of Patent: December 13, 2011Assignee: Sony CorporationInventor: Hiroyuki Okita
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Patent number: 8072126Abstract: An exemplary method for manufacturing a field electron emission source includes: providing a substrate (102); depositing a cathode layer (104) on a surface of the substrate; providing a carbon nanotube paste, coating the carbon nanotube paste on the cathode layer; calcining the carbon nanotube paste to form a carbon nanotube composite layer (110); and, irradiating the carbon nanotube composite layer with a laser beam of a certain power density, thereby achieving a field electron emission source.Type: GrantFiled: July 24, 2008Date of Patent: December 6, 2011Assignees: Tsinghua University, Hon Hai Precision Industry Co., Ltd.Inventors: Zhuo Chen, Feng Zhu, Kai-Li Jiang, Liang Liu, Shou-Shan Fan
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Patent number: 8072127Abstract: A thermionic electron emission device includes an insulating substrate, and one or more grids located thereon. The one or more grids include(s) a first, second, third and fourth electrode down-leads located on the periphery thereof, and a thermionic electron emission unit therein. The first and second electrode down-leads are parallel to each other. The third and fourth electrode down-leads are parallel to each other. The first and second electrode down-leads are insulated from the third and fourth electrode down-leads. The thermionic electron emission unit includes a first electrode, a second electrode, and a thermionic electron emitter. The first electrode and the second electrode are separately located and electrically connected to the first electrode down-lead and the third electrode down-lead respectively. Wherein the thermionic electron emitter includes a carbon nanotube film structure.Type: GrantFiled: October 23, 2008Date of Patent: December 6, 2011Assignees: Tsinghua University, Hon Hai Precision Industry Co., Ltd.Inventors: Peng Liu, Liang Liu, Kai-Li Jiang, Shou-Shan Fan
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Patent number: 8070548Abstract: A method for making the thermal electron emitter includes following steps. Providing a carbon nanotube film including a plurality of carbon nanotubes. Treating the carbon nanotube film with a solution comprising of a solvent and compound or a precursor of a compound, wherein the compound and the compound that is the basis of the precursor of a compound has a work function that is lower than the carbon nanotubes. Twisting the treated carbon nanotube film to form a carbon nanotube twisted wire. Drying the carbon nanotube twisted wire. Activating the carbon nanotube twisted wire.Type: GrantFiled: March 12, 2009Date of Patent: December 6, 2011Assignees: Tsinghua University, Hon Hai Precision Industry Co., Ltd.Inventors: Lin Xiao, Liang Liu, Chang-Hong Liu, Shou-Shan Fan
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Patent number: 8067892Abstract: A method is provided for forming a corona-producing emitter electrode by depositing substantially pure silicon carbide by CVD and forming a corona-producing emitter electrode with the deposited silicon carbide. In addition, a method of forming a corona-producing gas ionizer is provided by providing a corona electrode formed from CVD silicon carbide, electrically coupling the corona electrode to a high voltage power supply, and providing an AC or DC voltage from the high voltage power supply to the corona electrode. Furthermore, a method of ionizing gas in an environment is provided by providing a corona-producing ionizer emitter electrode formed substantially of CVD silicon carbide, electrically coupling the electrode to a high voltage power supply, and providing an AC or DC voltage from the high voltage power supply to the electrode.Type: GrantFiled: February 26, 2009Date of Patent: November 29, 2011Assignee: Illinois Tool Works Inc.Inventors: James R. Curtis, John A. Gorczyca