Discharge Devices Having A Thermionic Or Emissive Cathode Patents (Class 313/310)
  • Publication number: 20110285271
    Abstract: A field emission device includes an insulative substrate, an electron pulling electrode, a secondary electron emission layer, a first dielectric layer, a cathode electrode, and an electron emission layer. The electron pulling electrode is located on a surface of the insulative substrate. The secondary electron emission layer is located on a surface of the electron pulling electrode. The cathode electrode is located apart from the electron pulling electrode by the first dielectric layer. The cathode electrode has a surface oriented to the electron pulling electrode and defines a first opening as an electron output portion. The electron emission layer is located on the surface of the cathode electrode and oriented to the electron pulling electrode.
    Type: Application
    Filed: December 3, 2010
    Publication date: November 24, 2011
    Applicants: HON HAI PRECISION INDUSTRY CO., LTD., TSINGHUA UNIVERSITY
    Inventors: PENG LIU, DUAN-LIANG ZHOU, PI-JIN CHEN, ZHAO-FU HU, CAI-LIN GUO, BING-CHU DU, SHOU-SHAN FAN
  • Patent number: 8058787
    Abstract: The present invention provides a field emitter electrode and a method for fabricating the same. The method comprises the steps of mixing a carbonizable polymer, carbon nanotubes and a solvent to prepare a carbon nanotube-containing polymer solution, electrospinning (or electrostatic spinning) the polymer solution to form a nanofiber web layer on a substrate, stabilizing the nanofiber web layer such that the polymer present in the nanofiber web layer is crosslinked, and carbonizing the nanofiber web layer such that the crosslinked polymer is converted to a carbon fiber.
    Type: Grant
    Filed: September 23, 2008
    Date of Patent: November 15, 2011
    Assignee: Samsung Electro-Mechanics Co., Ltd.
    Inventors: Seung Hyun Ra, Kay Hyeok An, Young Hee Lee, Jong Myeon Lee
  • Patent number: 8053967
    Abstract: An electron emission device includes a cathode electrode and a gate electrode, the gate electrode is separated and insulated from the cathode electrode, the gate electrode is a carbon nanotube layer, and the carbon nanotube layer includes a plurality of carbon nanotube wire-like structures. A display device that includes the electron emission device is also disclosed.
    Type: Grant
    Filed: December 31, 2008
    Date of Patent: November 8, 2011
    Assignees: Tsinghua University, Hon Hai Precision Industry Co., Ltd.
    Inventors: Lin Xiao, Liang Liu, Kai-Li Jiang, Shou-Shan Fan
  • Patent number: 8035293
    Abstract: A light emitting device has an enclosure with a face portion, a cold cathode within the enclosure, a phosphor layer disposed on an interior surface of the face portion, an extracting grid between the cold cathode and the phosphor layer and a defocusing grid between the extracting grid and the phosphor layer. Electrons emitted from the cold cathode are defocused by the defocusing grid and impact the phosphor layer when an electric field is created between the cold cathode and the phosphor layer due to applied voltages at the cold cathode, extracting grid, defocusing grid and phosphor layer. The phosphor layer emits light through the face portion in response to electrons incident thereon. Secondary electron emission may also occur resulting in increased electron impact upon the phosphor layer, thereby increasing light output. A mirror layer may be included to reflect light toward the face portion of the light emitting device.
    Type: Grant
    Filed: December 16, 2005
    Date of Patent: October 11, 2011
    Assignee: Vu1 Corporation
    Inventor: Stalimir Popovich
  • Publication number: 20110240855
    Abstract: To obtain a SEM capable of both providing high resolution at low acceleration voltage and allowing high-speed elemental distribution measurement, a SE electron source including Zr—O as a diffusion source is shaped so that the radius r of curvature of the tip is more than 0.5 ?m and less than 1 ?m, and the cone angle ? of a conical portion at a portion in the vicinity of the tip at a distance of 3r to 8r from the tip, is more than 5° and less than (8/r)°. Another SE electron source uses Ba—O and includes a barium diffusion supply means composed of a sintered metal and a barium diffusion source containing barium oxide.
    Type: Application
    Filed: December 4, 2009
    Publication date: October 6, 2011
    Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION
    Inventors: Takashi Ohshima, Satoshi Tomimatsu
  • Publication number: 20110241533
    Abstract: An electron-emitting device has at least a cathode electrode, an electron-emitting member which is electrically connected to the cathode electrode, and a resistive layer which is provided between the cathode electrode and the electron-emitting member. The resistive layer is composed of the same material as that of the electron-emitting member, and film density of the resistive layer is lower than film density of the electron-emitting member.
    Type: Application
    Filed: April 10, 2009
    Publication date: October 6, 2011
    Applicant: CANON KABUSHIKI KAISHA
    Inventors: Norihiko Ochi, Kenichi Iwata
  • Publication number: 20110236072
    Abstract: The present invention provides an electron emitting element, comprising: a first electrode; an insulating fine particle layer formed on the first electrode; and comprising first insulating fine particles and second insulating fine particles larger than the first insulating fine particles, a surface of the insulating fine particle layer having a projection formed from the second insulating fine particles, and a second electrode formed on the insulating fine particle layer, wherein when a voltage is applied between the first electrode and the second electrode, electrons provided from the first electrode are accelerated in the insulating fine particle layer to be emitted from the second electrode via the projection.
    Type: Application
    Filed: March 23, 2011
    Publication date: September 29, 2011
    Inventors: Yasuo Imura, Hiroyuki Hirakawa, Ayae Nagaoka, Kanako Hirata, Tadashi Iwamatsu
  • Patent number: 8022609
    Abstract: A thermal field emission cathode which is employed in an electron microscope, a critical dimension examine tool, an electron beam lithograph machine, an electron beam tester and other electron beam related systems as an electron source is disclosed. Embodiments disclose changing coating shape, coating position and shorten emitter length to extend the lifetime of the field emission cathode.
    Type: Grant
    Filed: June 24, 2008
    Date of Patent: September 20, 2011
    Assignee: Hermes-Microvision, Inc.
    Inventors: Zhong-Wei Chen, Juying Dou
  • Patent number: 8022610
    Abstract: An electronic device including a pair of electrodes disposed on a substrate and carbon nanotubes electrically connecting the electrodes. A method for manufacturing this device in which the electrodes are disposed on the substrate and the nanotubes are prepared to electrically connect the electrodes.
    Type: Grant
    Filed: August 25, 2008
    Date of Patent: September 20, 2011
    Assignee: Canon Kabushiki Kaisha
    Inventors: Tohru Den, Tatsuya Iwasaki
  • Patent number: 8022608
    Abstract: By applying a drive voltage Vf [V] between first and second conductive films, when electrons are emitted by the first conductive film, an equipotential line of 0.5 Vf [V] is inclined toward the first conductive film, rather than toward the second conductive film, in the vicinity of the electron emitting portion of the first conductive film, in a cross section extending across the electron emitting portion and the portion of the second conductive film located nearest the electron emitting portion. The present invention improves electron emission efficiency.
    Type: Grant
    Filed: June 10, 2009
    Date of Patent: September 20, 2011
    Assignee: Canon Kabushiki Kaisha
    Inventors: Koki Nukanobu, Keisuke Yamamoto, Tamaki Kobayashi, Takuto Moriguchi
  • Patent number: 8013510
    Abstract: An electron emission device includes a cathode device and a gate electrode. The gate electrode is separated and insulted from the cathode device. The gate electrode includes a carbon nanotube layer having a plurality of spaces. A display device includes a cathode device, an anode device spaced from the cathode electrode and a gate electrode. The gate electrode is disposed between the cathode device and the anode device. The cathode device, the anode device and the gate electrode are separated and insulted from each other. The gate electrode comprises a carbon nanotube layer having a plurality of spaces.
    Type: Grant
    Filed: December 31, 2008
    Date of Patent: September 6, 2011
    Assignees: Tsinghua University, Hon Hai Precision Industry Co., Ltd.
    Inventors: Lin Xiao, Liang Liu, Kai-Li Jiang, Shou-Shan Fan
  • Patent number: 8013505
    Abstract: A field emission electron source includes a CNT needle and a conductive base. The CNT needle has an end portion and a broken end portion; the end portion is contacted with and electrically connected to a surface of the conductive base. The CNTs at the broken end portion form a taper-shape structure, wherein one CNT protrudes and is higher than the adjacent CNTs.
    Type: Grant
    Filed: November 26, 2008
    Date of Patent: September 6, 2011
    Assignees: Tsinghua University, Hon Hai Precision Industry Co., Ltd.
    Inventors: Yang Wei, Liang Liu, Shou-Shan Fan
  • Patent number: 8013511
    Abstract: An electron-emitting device has a pair of device electrodes formed on a substrate and an electroconductive film connected to the device electrodes. The electroconductive film has a first gap between the device electrodes and has a carbon film having a second gap at least in the first gap. The substrate is formed by stacking a nitrogen-contained activation suppressing layer and an activation accelerating layer having a nitrogen containing ratio smaller than that of the activation suppressing layer onto a base and has nitrogen containing ratio distribution in the activation suppressing layer in a film thickness direction. The nitrogen containing ratio of the activation suppressing layer at the activation accelerating layer side is smaller than that at the base side.
    Type: Grant
    Filed: May 11, 2009
    Date of Patent: September 6, 2011
    Assignee: Canon Kabushiki Kaisha
    Inventors: Eiji Takeuchi, Takeo Tsukamoto
  • Patent number: 8013509
    Abstract: A base body includes a first part and a second part. The second part has a lower thermal conductivity than the first part and is arranged adjacently to the first part. A first conductive film is formed on the first part and a second conductive film is formed on the second part. At least part of a gap is located above a boundary between the first part and the second part.
    Type: Grant
    Filed: June 29, 2007
    Date of Patent: September 6, 2011
    Assignee: Canon Kabushiki Kaisha
    Inventors: Takuto Moriguchi, Koki Nukanobu, Takahiro Sato, Takeo Tsukamoto
  • Patent number: 8007333
    Abstract: In accordance with the invention, there are field emission light emitting devices and methods of making them. The field emission light emitting device can include a plurality of spacers, each connecting a substantially transparent substrate to a backing substrate. The device can also include a plurality of pixels, wherein each of the plurality of pixels can include one or more first electrodes disposed over the substantially transparent substrate, a light emitting layer disposed over each of the one or more first electrodes, and one or more second electrodes disposed over the backing substrate, wherein the one or more second electrodes and the one or more first electrode are disposed at a predetermined gap in a low pressure region. Each of the plurality of pixels can further include one or more nanocylinder electron emitter arrays disposed over each of the one or more second electrodes.
    Type: Grant
    Filed: June 6, 2008
    Date of Patent: August 30, 2011
    Assignee: Xerox Corporation
    Inventors: David H. Pan, Fa-Gung Fan
  • Patent number: 8000449
    Abstract: It is described an emitter (26, 40) for X-ray tubes comprising: a flat foil with an emitting section (30, 46); and at least two electrically conductive fixing sections (31-34; 41-44); wherein the emitting section (30, 46) is unstructured.
    Type: Grant
    Filed: October 10, 2007
    Date of Patent: August 16, 2011
    Assignee: Koninklijke Philips Electronics N.V.
    Inventors: Stefan Hauttmann, Wolfram Maring
  • Publication number: 20110186735
    Abstract: An electron source is implemented which has a lower work function of an electron emission surface, yields emitted electrons of a narrower energy bandwidth and higher current density, and lasts longer than existing Zr/O/W electron sources. Further, an electron microscope which yields an image of higher-resolution in a shorter time and an electron beam lithography device which yields higher throughput are also provided. The electron source comprises a needle-shaped electrode made of metal having its tip in a needle shape, a heating body which heats up the needle-shaped electrode, and a diffusion source capable of being heated up by the heating body and made of a mixture of barium composite containing oxygen and carbon particles.
    Type: Application
    Filed: February 3, 2011
    Publication date: August 4, 2011
    Inventors: Tadashi FUJIEDA, Makoto Okai, Takashi Ohshima, Boklae Cho
  • Patent number: 7982382
    Abstract: A thermionic electron source includes a substrate, at least two electrodes, and a thermionic emitter. The electrodes are electrically connected to the thermionic emitter. The thermionic emitter has a film structure. Wherein there a space is defined between the thermionic emitter and the substrate.
    Type: Grant
    Filed: October 23, 2008
    Date of Patent: July 19, 2011
    Assignees: Tsinghua University, Hon Hai Precision Industry Co., Ltd.
    Inventors: Peng Liu, Liang Liu, Kai-Li Jiang, Shou-Shan Fan
  • Patent number: 7982381
    Abstract: An electron source including: a plurality of electron-emitting devices connected to a matrix wiring of scan lines and modulation lines on a substrate, wherein each of the electron-emitting devices includes a cathode electrode connected to the scan line, a gate electrode connected to the modulation line and a plurality of electron-emitting members, the cathode electrode is configured in a first comb-like structure for applying an electric potential of the cathode to the plurality of electron-emitting members, the gate electrode is configured in a second comb-like structure for applying an electric potential of the gate to the plurality of electron-emitting members, and each of the first and second comb-like structures is provided with a plurality of comb-teeth, and a connecting electrode electrically connected to the plurality of teeth in at least one of the first and second comb-like structures.
    Type: Grant
    Filed: April 9, 2009
    Date of Patent: July 19, 2011
    Assignee: Canon Kabushiki Kaisha
    Inventor: Nobumasa Suzuki
  • Patent number: 7977859
    Abstract: Degradation of an electron emission element by irradiation of the positive ion generated inside a panel is suppressed. A deflection electrode is periodically disposed, and the electron emission region of an electron emission element is disposed so as not to include a center line between adjacent deflection electrodes, so that an electron beam trajectory is deflected and bombardment or irradiation of the generated positive ion to the electron emission region is prevented.
    Type: Grant
    Filed: June 3, 2008
    Date of Patent: July 12, 2011
    Assignee: Hitachi, Ltd.
    Inventors: Mutsumi Suzuki, Toshiaki Kusunoki
  • Patent number: 7973460
    Abstract: A composition for forming an electron emitter, an electron emitter formed using the composition, and a backlight unit including the electron emitter, where dispersion of the electron emission material in the composition is increased, and the composition includes an electron emission material, a vehicle, and carbon-based filler particles.
    Type: Grant
    Filed: April 25, 2007
    Date of Patent: July 5, 2011
    Assignee: Samsung SDI Co., Ltd.
    Inventors: Yoon-Jin Kim, Jae-Myung Kim, Hee-Sung Moon
  • Patent number: 7973463
    Abstract: There are provided a stable electron-emitting device with less fluctuation in electron-emitting properties and a method of fabricating the electron-emitting device. The electron-emitting device has a substrate; a plurality of columnar first regions respectively orientated substantially perpendicular to the surface of the substrate; a second region provided between the respective first regions higher than the first regions in resistance; and an electron emission layer covering the columnar first regions and the second region.
    Type: Grant
    Filed: April 9, 2007
    Date of Patent: July 5, 2011
    Assignee: Canon Kabushiki Kaisha
    Inventor: Shunsuke Murakami
  • Patent number: 7973461
    Abstract: A light emitting device and a display device using the same. The light emitting device includes: a substrate provided with recesses formed in a stripe pattern; first electrodes disposed inside the recesses in a stripe pattern aligned parallel to the recesses; electron emission regions disposed on the first electrodes; second electrodes disposed in a stripe pattern aligned in a direction crossing the first electrodes and closely fixed to the substrate; and an adhesive member for fixing the second electrodes to the substrate. The second electrodes include mesh portions spaced apart from tops of the electron emission regions in crossing of the first electrodes and the second electrodes, supports surrounding the mesh portions and connected with the substrate, and combining grooves formed at edges of the supports facing the substrate. The adhesive members are disposed in the combining grooves of the second electrodes to connect the second electrodes with the substrate.
    Type: Grant
    Filed: December 21, 2009
    Date of Patent: July 5, 2011
    Assignee: Samsung SDI Co., Ltd.
    Inventor: Kyung-Sun Ryu
  • Patent number: 7973464
    Abstract: A given field emission element includes a carbon nanotube field emission wire and at least one supporting protective layer coating an outer surface of the carbon nanotube field emission wire. The carbon nanotube field emission wire is selected from a group consisting of a carbon nanotube yarn, a wire-shaped CNT-polymer composite, and a wire-shaped CNT-glass composite. A method for manufacturing the described field emission element includes the steps of: (a) providing one carbon nanotube field emission wire; (b) forming one supporting protective layer on an outer surface of the carbon nanotube field emission wire; and (c) cutting the carbon nanotube field emission wire to a predetermined length and treating the carbon nanotube emission wire to form the field emission element.
    Type: Grant
    Filed: June 22, 2007
    Date of Patent: July 5, 2011
    Assignees: Tsinghua University, Hon Hai Precision Industry Co., Ltd.
    Inventors: Liang Liu, Kai-Li Jiang, Shou-Shan Fan, Caesar Chen, Hsi-Fu Lee, Ga-Lane Chen
  • Patent number: 7969080
    Abstract: The present invention provides an electron source that can produce a stable electron beam even if an apparatus employing the electron source receives vibration from the outside. An electron source comprising an insulator, a pair of conductive terminals attached to the insulator, a filament tensed between the pair of conductive terminals, a rod-shaped cathode having a sharp end portion performing as an electron emitting portion and joined with the filament, wherein the cathode has another end portion different from the electron emitting portion, fixed to the insulator. It is preferred that said another end portion of the cathode other than the electron emitting portion, is fixed to the insulator via a metal pin brazed with the insulator.
    Type: Grant
    Filed: August 31, 2007
    Date of Patent: June 28, 2011
    Assignee: Denki Kagaku Kogyo Kabushiki Kaisha
    Inventors: Yoshinori Terui, Seiichi Sakawa
  • Publication number: 20110148281
    Abstract: An electron-emitting device includes an electron-emitting film containing molybdenum. A spectrum obtained by measuring a surface of the electron-emitting film by X-ray photoelectron spectroscopy has a first peak having a peak top in the range of 229±0.5 eV and a sub peak having a peak top in the range of 228.1±0.3 eV.
    Type: Application
    Filed: December 16, 2010
    Publication date: June 23, 2011
    Applicant: CANON KABUSHIKI KAISHA
    Inventors: Taiko Motoi, Eiji Ozaki, Ryoji Fujiwara, Akiko Kitao
  • Publication number: 20110141392
    Abstract: A light emitting device includes a vacuum vessel, a recess portion, a cathode electrode, an electron emission region, a gate electrode, and a gate terminal portion. The vacuum vessel includes a first substrate, a second substrate facing the first substrate, and a sealing member disposed between the first substrate and the second substrate. The recess portion is formed to be depressed along a direction on a surface of the first substrate facing the second substrate, and the cathode electrode is formed in the recess portion and extending along the one direction. The electron emission region is formed on the cathode electrode within the recess portion. The gate electrode includes a metal plate on the surface of the first substrate along a direction crossing the cathode electrode at an inner side of the sealing member.
    Type: Application
    Filed: July 1, 2010
    Publication date: June 16, 2011
    Applicant: Samsung SDI Co., Ltd.
    Inventor: Ki-Hyun Noh
  • Patent number: 7960905
    Abstract: The present invention provides a diamond electron source exerting stable and excellent electron emission characteristics, which can be used for a cold cathode surface structure operable with low voltage and a method for producing the diamond electron source. Specifically, the diamond electron source having a carbon-terminated structure has a structure composed of an electrode and a diamond film and emits electrons or electron beams from the diamond film when voltage is applied to the electrode. The diamond film is made of diamond having a carbon-terminated structure. The method for producing the diamond electron source is also provided herein.
    Type: Grant
    Filed: June 21, 2006
    Date of Patent: June 14, 2011
    Assignee: National Institute of Advanced Industrial Science and Technology
    Inventors: Takatoshi Yamada, Christoph Nebel, Shinichi Shikata
  • Patent number: 7960903
    Abstract: An electron emission source-forming composition includes a carbon-based material; a vehicle composed of a resin component and a solvent component; and at least one metal oxide with an average particle diameter in a range of 100 to 1,000 nm selected from Al2O3, TiO2, and SiO2. The electron emission source-forming composition is sintered under an air atmosphere during electron emission source formation. Therefore, carbon deposits after sintering and degradation of Carbon Nano-Tubes (CNTs) upon sintering can be remarkably reduced. As a result, the electron emission source formed using the composition has a high current density and the electron emission device using the electron emission source exhibits enhanced reliability.
    Type: Grant
    Filed: February 27, 2006
    Date of Patent: June 14, 2011
    Assignee: Samsung SDI Co., Ltd.
    Inventors: Mee-Ae Ryu, Jong-Hwan Park, Jae-Sang Ha, Jeong-Hee Lee
  • Patent number: 7960906
    Abstract: Electron emission devices include first electrodes on a substrate extending in a first direction and spaced apart from each other. Second electrodes are on the substrate alternating between the first electrodes and extending in a second direction opposing the first direction. First electron emitters and second electron emitters are on side surfaces of the first electrodes and the second electrodes, respectively. Gaps are formed between the first electron emitters and second electron emitters.
    Type: Grant
    Filed: June 25, 2008
    Date of Patent: June 14, 2011
    Assignee: Samsung SDI Co., Ltd.
    Inventors: So-Ra Lee, Jae-Myung Kim, Yoon-Jin Kim, Hee-Sung Moon, Kyu-Nam Joo, Hyun-Ki Park, Young-Suk Cho
  • Patent number: 7956525
    Abstract: A flexible electronic device is made up of nanostructures. Specifically, the device includes a flexible substrate, a film of nanostructures in contact with the flexible substrate, a first conducting element in contact with the film of nanostructures, and a second conducting element in contact with the film of nanostructures. The nanostructures may comprise nanotubes, such as carbon nanotubes disposed along the flexible substrate, such as an organic or polymer substrate. The first and second conductive elements may serve as electrical terminals, or as a source and drain. In addition, the electronic device may include a gate electrode that is in proximity to the nanotubes and not in electrical contact with the nanotubes. In this configuration, the device can operate as a transistor or a FET. The device may also be operated in a resistive mode as a chemical sensor (e.g., for sensing NH3).
    Type: Grant
    Filed: May 14, 2004
    Date of Patent: June 7, 2011
    Assignees: Nanomix, Inc., The Regents of the University of California
    Inventors: N. Peter Armitage, Keith Bradley, Jean-Christophe P. Gabriel, George Grüner
  • Patent number: 7956523
    Abstract: A carbon film is coated over the surface of a spacer. The carbon film has the following three features when the binding state of carbon is analyzed by X-ray photoelectron spectroscopy: (a) an integral area of a region of 284.5 eV or below is 27% or less of an integral area attributed to carbon, (b) an integral area of a region of 286.0 eV-287.0 eV is 18% or less thereof, and (c) an integral area of a region of 287.0 eV or above is 9% or more thereof.
    Type: Grant
    Filed: May 1, 2008
    Date of Patent: June 7, 2011
    Assignee: Canon Kabushiki Kaisha
    Inventors: Kazuo Kuroda, Nobuhiro Ito
  • Patent number: 7952265
    Abstract: An electron-emitting device, comprising: a pair of device electrodes formed on an insulating substrate; and a conductive film formed to connect the device electrodes and having an electron-emitting portion, wherein the conductive film has a thickness of 3 nm to 50 nm and is made of precious metal and oxide of base metal, a percentage of the base metal among metals contained in the conductive film is 30 mol % or more, and the conductive film has a concentration gradient of the oxide of the base metal in a thickness direction.
    Type: Grant
    Filed: August 1, 2008
    Date of Patent: May 31, 2011
    Assignee: Canon Kabushiki Kaisha
    Inventors: Takashi Iwaki, Tsuyoshi Ibe, Masahiro Terada
  • Publication number: 20110115363
    Abstract: An electron emitter includes a guard electrode 13 on the outer circumferential side of a carbon film structure 10 which is formed on a substrate 7 by plasma CVD method. This guard electrode 13 includes a curved surface portion (a curved surface portion that curves from top toward a side opposite to the film-forming direction) 13a convex in a film-forming direction of the carbon film structure 10. A curvature radius R1 of an outer-circumferential-side portion of the curved surface portion 13a is larger than or equal to a curvature radius R2 of a carbon-film-structure-side portion of the curved surface portion 13a.
    Type: Application
    Filed: July 30, 2009
    Publication date: May 19, 2011
    Inventors: Yoshihisa Ishiguro, Masanori Haba, Ryouichi Suzuki
  • Patent number: 7944136
    Abstract: The invention aims to improve, in a light emitter substrate having a resistor for connecting row-direction adjacent electrodes, withstand discharge performance of the resistor. The light emitter substrate comprises a substrate, plural light emitting members positioned in matrix on the substrate, plural electrodes positioned in matrix and each covering at least one of the light emitting members, and a row-direction striped resistor positioned between the column-direction adjacent electrodes and connecting the row/column-direction adjacent electrodes.
    Type: Grant
    Filed: June 4, 2009
    Date of Patent: May 17, 2011
    Assignee: Canon Kabushiki Kaisha
    Inventor: Yukihiro Inoue
  • Publication number: 20110101845
    Abstract: A field emission cathode device includes an insulative substrate, a plurality of cathode electrodes, and a plurality of electron emission units. The insulative substrate has a top surface and a bottom surface. The insulative substrate defines a plurality of openings. The cathode electrodes are located on the bottom surface. Each of the electron emission units has a first portion secured between the insulative substrate and one corresponding cathode electrode and a second portion received in one corresponding opening.
    Type: Application
    Filed: April 30, 2010
    Publication date: May 5, 2011
    Applicants: TSINGHUA UNIVERSITY, HON HAI PRECISION INDUSTRY CO., LTD.
    Inventors: HAI-YAN HAO, PENG LIU, JIE TANG, YANG WEI, LIANG LIU, KAI-LI JIANG, SHOU-SHAN FAN
  • Patent number: 7936118
    Abstract: A light source apparatus applicable to a backlight module includes a cathode structure, an anode structure, a fluorescent layer, a secondary electron generation layer, and a low-pressure gas layer. The fluorescent layer is located between the cathode structure and the anode structure. The low-pressure gas layer is filled between the cathode structure and the anode structure. The secondary electron generation layer is disposed on the cathode structure and can generate additional secondary electrons to hit the fluorescent layer for improving the luminous efficiency.
    Type: Grant
    Filed: February 29, 2008
    Date of Patent: May 3, 2011
    Assignee: Industrial Technology Research Institute
    Inventors: Yi-Ping Lin, Jung-Yu Li, Shih-Pu Chen, Wei-Chih Lin, Lian-Yi Cho
  • Patent number: 7927652
    Abstract: A method for manufacturing a field emission electron source, the method comprising the steps of: preparing a substrate, a carbon nanotubes slurry, and a conductive slurry; applying a conductive slurry layer onto the substrate; applying a layer of carbon nanotubes slurry onto the conductive slurry layer; and solidifying the substrate under a temperature of 300 to 600 degrees centigrade so as to form the field emission electron source.
    Type: Grant
    Filed: October 5, 2007
    Date of Patent: April 19, 2011
    Assignees: Tsinghua University, Hon Hai Precision Industry Co., Ltd.
    Inventors: Yang Wei, Lin Xiao, Feng Zhu, Jie Tang, Liang Liu, Shou-Shan Fan
  • Publication number: 20110084590
    Abstract: An electron-emitting device according to the present invention, comprises: an insulating member having a top face, a side face and a recess portion formed between the top face and the side face; a cathode electrode which is disposed on the side face and has an electron emitting portion located in a boundary portion between the side face and the recess portion; and a gate electrode which is disposed on the top face and of which an edge faces the electron emitting portion, wherein the boundary portion in which the electron emitting portion is located has concavity and convexity in a direction parallel to the top face.
    Type: Application
    Filed: October 4, 2010
    Publication date: April 14, 2011
    Applicant: CANON KABUSHIKI KAISHA
    Inventors: Hideyasu Tashiro, Yohei Hashizume, Taro Hiroike, Fumikazu Kobayashi
  • Publication number: 20110084597
    Abstract: There is provided a new electron beam apparatus which improves the instability of an electron emission characteristic and provides a high efficient electron emission characteristic. The electron beam apparatus includes: an insulating member having a recess on its surface; a cathode having a protruding portion extending over the outer surface of the insulating member and the inner surface of the recess; a gate positioned at the outer surface of the insulating member in opposition to the protruding portion; and an anode positioned in opposition to the protruding portion through the gate.
    Type: Application
    Filed: October 13, 2010
    Publication date: April 14, 2011
    Applicant: CANON KABUSHIKI KAISHA
    Inventors: Takeo Tsukamoto, Ouichi Kubota
  • Publication number: 20110084591
    Abstract: A thermal field emission cathode which is employed in an electron microscope, a critical dimension examine tool, an electron beam lithograph machine, an electron beam tester and other electron beam related systems as an electron source is disclosed. Embodiments disclose changing coating shape, coating position and shorten emitter length to extend the lifetime of the field emission cathode.
    Type: Application
    Filed: December 17, 2010
    Publication date: April 14, 2011
    Applicant: HERMES-MICROVISION, INC.
    Inventors: Zhong-Wei CHEN, Juying Dou
  • Publication number: 20110074744
    Abstract: Provided is an electron-emitting device including an insulating member and a gate stacked on a substrate. A cathode is disposed on a side surface of the insulating member. The cathode has a plurality of protrusions provided along a corner of the insulating member. The gate has a plurality of protrusions extending toward the cathode.
    Type: Application
    Filed: September 24, 2010
    Publication date: March 31, 2011
    Applicant: CANON KABUSHIKI KAISHA
    Inventors: Satoru Nitobe, Takashi Shiozawa, Takanori Suwa, Shigeyuki Takagi, Toshiharu Sumiya
  • Patent number: 7915798
    Abstract: A thermionic emission device includes an insulating substrate, and one or more grids located thereon. Each grid includes a first, second, third and fourth electrode down-leads located on the periphery thereof, and a thermionic electron emission unit therein. The first and second electrode down-leads are parallel to each other. The third and fourth electrode down-leads are parallel to each other. The first and second electrode down-leads are insulated from the third and fourth electrode down-leads. The thermionic electron emission unit includes a first electrode, a second electrode, and a thermionic electron emitter. The first electrode and the second electrode are separately located and electrically connected to the first electrode down-lead and the third electrode down-lead respectively. The thermionic electron emitter includes at least one carbon nanotube wire.
    Type: Grant
    Filed: October 23, 2008
    Date of Patent: March 29, 2011
    Assignees: Tsinghua University, Hon Hai Precision Industry Co., Ltd.
    Inventors: Peng Liu, Liang Liu, Kai-Li Jiang, Shou-Shan Fan
  • Patent number: 7915800
    Abstract: Field emission devices (FEDs) are provided. In one embodiment, an FED includes an electron emitter, a tube spaced apart from the electron emitter and having a first opening and a second opening, and a gate electrode disposed on an outer surface of the tube. The first opening is disposed at one end of the tube adjacent to the electron emitter, and the second opening is disposed at the other end of the tube. The FED further includes an anode that is spaced apart from the second opening and collects secondary electrons emitted from the second opening.
    Type: Grant
    Filed: September 19, 2008
    Date of Patent: March 29, 2011
    Assignee: SNU R&DB Foundation
    Inventors: Yong Hyup Kim, Wal Jun Kim
  • Patent number: 7915797
    Abstract: A thermionic electron source includes a substrate, two electrodes, and a thermionic emitter. The thermionic emitter is electrically connected to the two electrodes. The substrate has a recess formed on a surface thereof, and the thermionic emitter is located on the surface of the substrate corresponding to the recess.
    Type: Grant
    Filed: October 23, 2008
    Date of Patent: March 29, 2011
    Assignees: Tsinghua University, Hon Hai Precision Industry Co., Ltd.
    Inventors: Peng Liu, Liang Liu, Kai-Li Jiang, Shou-Shan Fan
  • Publication number: 20110057555
    Abstract: A matrix-type cold-cathode electron source device includes: an emitter array (3b) in which a plurality of emitters are arranged, and a gate electrode (5) opposed to the emitter array (3b). The gate electrode (5) includes: an emitter area gate electrode (5c) opposed to the emitter array (3b); a gate address electrode (5a) connecting the emitter area gate electrode (5c) to a gate signal wire (8a); and a high-resistance area (5b) disposed between the gate address electrode (5a) and the emitter area gate electrode (5c).
    Type: Application
    Filed: April 27, 2009
    Publication date: March 10, 2011
    Applicant: PANASONIC CORPORATION
    Inventors: Makoto Yamamoto, Keisuke Koga
  • Patent number: 7902737
    Abstract: A light emission device and a display having the light emission device are provided. The light emission device includes first and second substrates arranged opposite to each other, an electron emission unit provided on the first substrate, a light emission unit provided on the second substrate, and spacers that are supportably disposed between the first and second substrates. The spacers are formed in a pillar configuration and each side of the spacers is arranged at an acute angle with respect to an edge of driving electrodes of the electron emission unit.
    Type: Grant
    Filed: May 2, 2008
    Date of Patent: March 8, 2011
    Assignee: Samsung SDI Co., Ltd.
    Inventor: Byong-Gon Lee
  • Publication number: 20110050078
    Abstract: An image display apparatus according to the present invention comprises a rear plate having electron emitting devices, a face plate having an anode electrode arranged in opposition to the electron emitting devices, and a plate-shaped spacer arranged between the rear plate and the face plate, wherein the spacer has a recess at its side of the face plate, the anode electrode has an edge located in opposition to the recess, the recess has the shape of a circular arc having a radius r, and when it is assumed that the recess has a maximum depth of d, a relation of r/d?1 is satisfied.
    Type: Application
    Filed: August 18, 2010
    Publication date: March 3, 2011
    Applicant: CANON KABUSHIKI KAISHA
    Inventors: Akira Hayama, Takayuki Ogawara
  • Publication number: 20110050079
    Abstract: A display apparatus comprises: a rear plate which has an electron-emitting device; a face plate which has an anode electrode and a potential defining electrode; and a plate spacer which is opposite to the anode electrode and the potential defining electrode, between the rear plate and the face plate. An insulative base member of the spacer has a recessed portion which opposes to the anode electrode, the potential defining electrode, and a portion of the face plate between the anode electrode and the potential defining electrode. Thus, electric discharges between the spacer and the anode electrode and between the spacer and the potential defining electrode can be suppressed.
    Type: Application
    Filed: August 18, 2010
    Publication date: March 3, 2011
    Applicant: CANON KABUSHIKI KAISHA
    Inventors: Akira Hayama, Koichi Tsunoda
  • Publication number: 20110050080
    Abstract: According to the embodiment, an electron emission element includes a conductive substrate, a first diamond layer of a first conductivity type formed on the conductive substrate, and a second diamond layer of the first conductivity type formed on the first diamond layer. Thereby, it becomes possible to provide the electron emission element having a high electron emission amount and a high current density even in a low electric field at low temperature and the electron emission apparatus using this electron emission element.
    Type: Application
    Filed: September 23, 2010
    Publication date: March 3, 2011
    Applicant: KABUSHIKI KAISHA TOSHIBA
    Inventors: Mariko Suzuki, Tadashi Sakai, Naoshi Sakuma, Masayuki Katagiri, Yuichi Yamazaki