Abstract: A transmitter device may communicate with a receiver device via one or more data links. Data transmitted over the data links may be conveyed in accordance with a communications protocol that requires a deterministic latency for all data lanes in each of the data links. The receiver device may include a deterministic latency controller configured to store a worst-case latency value acquired upon initial startup and a predetermined link reinitialization latency compensation value. During normal operation, the deterministic latency controller may sum together the worst-case latency value and the predetermined link reinitialization latency compensation value to obtain a total compensated deterministic latency that is applied to all data links for simultaneous data release.

Abstract: A dynamic gain cell memory cell capable of storing multiple values is described herein. In one example, a memory cell may include an input, such as a first transistor. The memory cell may further include a capacitive element coupled to the input, where the capacitive element stores one or more values corresponding to one of multiple voltage levels. A sense transistor configured to operate in source-follower mode may be coupled to the capacitive element, where the charge on the capacitive element controls operation of the sense transistor, such as through a gate of the sense transistor. The memory cell may further include an output connected to the drain of the sense transistor, where current flows through the transistor when the output is activated to access the one or more values stored in capacitive element.

Abstract: The semiconductor memory device including a data strobe signal input buffer configured to receive a data strobe signal and generate an input data strobe signal, a data input buffer configured to receive data delayed by a first delay time compared to the data strobe signal and generate input data, a latency control signal generator configured to generate and activate a first on-die termination control signal during a first period in which the data strobe signal is applied in response to receiving a write command, a first on-die termination control circuit configured to vary a first variable resistance code in response to the first on-die termination control signal, and a data strobe signal termination circuit configured to terminate the data strobe signal and including a first on-die termination resistor, a resistance value of which varies in response to the first variable resistance code may be provided.

Abstract: Methods and apparatuses of providing word line voltages are disclosed. An example method includes: activating and deactivating a word line. Activating the word line includes: rendering the first, second and third transistors conductive, non-conductive and non-conductive, respectively, wherein the first transistor is rendered conductive by supplying a gate of the first transistor with a first voltage; and supplying the first node with an active voltage. Deactivating the word line includes: changing a voltage of the first node from the active voltage to an inactive voltage; changing a voltage of the gate of the first transistor from the first voltage to a second voltage, wherein the first transistor is kept conductive by the second voltage; rendering the third transistor conductive during the gate of the first transistor being at the second voltage; and rendering the first and second transistors non-conductive and conductive, respectively, after the third transistor has been rendered conductive.

Abstract: Devices and methods are provided for word line pulse width control for a static random access memory (SRAM) devices. An inverter within a pre-decoder circuit receives a first input of a clocked address. The inverter determines an output based on the clocked address. An electrical load of a decoder driver circuit of the SRAM device is modified based on the output. Current to a transistor coupled at a common node is provided. The transistor is configured to electrically couple a plurality of transistors of the decoder driver circuit within the SRAM device.

Abstract: A driver for transmitting multi-level signals on a multi-wire bus is described that includes at least one current source connected to a transmission line, each current source selectively enabled to source current to the transmission line to drive a line voltage above a termination voltage of a termination voltage source connected to the transmission line via a termination impedance element, wherein each of the at least one current sources has an output impedance different than a characteristic impedance of the transmission line, and at least one current sink connected to the transmission line, each current sink selectively enabled to sink current from the transmission line to drive a line voltage below the termination voltage, each of the at least one current sinks having an output impedance different than the characteristic impedance of the transmission line.

Abstract: A method for a dynamic decode circuit to decode a plurality of input signals, the dynamic decode circuit comprises a decoder that decodes the plurality of input signals to produce a result at a first node, the result is propagated to a second node while an evaluation clock is active by a pair of serially connected transistors consisting of a transistor receiving an evaluation clock at its gate and a transistor receiving the first node at its gate, the interconnection of the pair of serially connected transistors is precharged when the evaluation clock is inactive.

Abstract: A one-chip igniter is formed by a convenient manufacturing process and at a low cost. A device to switch a power semiconductor switch is provided, the device comprising a first semiconductor switch which is turned on or turned off in response to a first control signal input to a gate and, if turned on, provides a high voltage to a gate of the power semiconductor switch, and a voltage boosting circuit which boosts a voltage of the first control signal that turns the first semiconductor switch on. As one example, the voltage boosting circuit boosts a voltage of the first control signal which turns the first semiconductor switch on to a higher voltage than a high voltage.

Abstract: Radio-frequency (RF) switch circuits are disclosed providing improved switching performance. An RF switch system includes at least one field-effect transistor (FET) disposed between a first node and a second node, each having a respective source, drain, gate, and body. The system includes a coupling circuit including a first path and a second path, the first path being between the respective source or the respective drain and the respective gate of the at least one FET, the second path being between the respective source or the respective drain and the respective body of the at least one FET. The coupling circuit may be configured to allow discharge of interface charge from either or both of the coupled gate and body.

Abstract: A semiconductor device includes a 2-input NOR decoder and an inverter that have six MOS transistors arranged in a line. The MOS transistors of the decoder are formed in a planar silicon layer disposed on a substrate and each have a structure in which a drain, a gate, and a source are arranged vertically and the gate surrounds a silicon pillar. The planar silicon layer includes a first active region having a first conductivity type and a second active region having a second conductivity type. The first and second active regions are connected to each other via a silicon layer on a surface of the planar silicon layer.

Abstract: A memory apparatus and a memory accessing method are provided. The memory accessing method includes: calculating an accessed times of each of a plurality of word line addresses; setting each of the corresponding word line addresses as an aggressor word line address by comparing the accessed times of the each of the word line addresses and a threshold accessed times; and setting a backup word line address, and replacing memory cells of the aggressor word line address by memory cells of the backup word line address.

Abstract: A driving circuit includes an activating end, an operation switch, a voltage control end, and an output switch. The activating end selectively outputs a first voltage control signal and a second voltage control signal. The operation switch is turned off according to the first voltage control signal to generate a low voltage control signal or is turned on according to the second voltage control signal to generate a high voltage control signal. The voltage control end generates a low voltage according to the low voltage control signal or generates a bias voltage according to the high voltage control signal. The output switch is turned off according to the low voltage to determine that an output voltage is the same as the low voltage, or is turned on according to the bias voltage to determine that the output voltage is the same as the high voltage.

Abstract: An SRAM array having multiple cell cores to store and retrieve data. A cell core includes a plurality of SRAM cells, and at least two corresponding cell cores build a cell core row. A word decoder is configured to decode incoming address signals. The word decoder includes a cell core select unit configured to generate a cell core row select signal from a combination of a first part of the incoming address signals and a received clock signal.

Abstract: The described apparatus and methods may include a first shifting stage configured to receive a signal having an upper power rail at a first voltage level and a lower power rail at a second voltage level, the first shifting stage configured to shift the upper power rail from the first voltage level to a third voltage level while maintaining the lower power rail at the second voltage level. The apparatus and methods may also include a second shifting stage coupled to the first shifting stage and configured to shift the lower power rail from the second voltage level to a fourth voltage level while maintaining the upper power rail at the third voltage level, the second shifting stage further configured to transmit the signal having the upper power rail at the third voltage level and the lower power rail at the fourth voltage level.

Abstract: A semiconductor device includes: a first level shifter suitable for shifting a level of a region identification signal identifying first and second regions to a preset voltage; a plurality of second level shifters suitable for shifting levels of a plurality of internal control signals to the preset voltage; and a plurality of logic operators suitable for generating a plurality of first internal assignment signals assigned to the first region and a plurality of second internal assignment signals assigned to the second region in response to a common shifting signal output from the first level shifter and a plurality of individual shifting signals output from the plurality of second level shifters.

Abstract: A decoder for decoding an address having a plurality of bits ranging from a first address bit a1 to a last address bit aN, each address bit being either true or false is provided that includes a pre-charge circuit adapted to pre-charge a dynamic NOR node and a dynamic OR node and then allow the pre-charged dynamic NOR node and pre-charged dynamic OR node to float; a plurality of switches coupled between the dynamic NOR node and ground, each switch corresponding uniquely to the address bits such that the switches range from a first switch corresponding to a1 to an nth switch corresponding to aN, wherein any switch corresponding to a true address bit is configured to turn on only if its corresponding address bit is false, and wherein any switch corresponding to a false address bit is configured to turn on only if its corresponding address bit is true.

Abstract: A selector circuit includes a plurality of first selection circuits each configured to select one of plural input signals on the basis of a first selection control signal and to output a first output signal and a second selection circuit configured to select one of the first output signals on the basis of a second selection control signal. Each of the first selection circuits includes a charging circuit configured to charge a first node by electrically connecting the first node to a first voltage in a first period, and a discharge control circuit configured to control, on the basis of the first selection control signal, the input signals and the second selection control signal, whether to discharge the charged first node by electrically connecting the first node to a second voltage source having a potential lower than the first voltage source in a second period following the first period.

Abstract: An inverter and an antenna circuit. The inverter that receives control signals including a first control signal, a second control signal, and a third control signal, inverts the first control signal, and outputs the inverted first control signal, includes: a first MOS transistor having a gate to which the first control signal is applied and a source that is grounded; a second MOS transistor having a gate to which the third control signal is applied and a source to which the second control signal is applied; and a third MOS transistor having a gate to which the second control signal is applied and a source to which the third control signal is applied, wherein drains of the first MOS transistor, the second MOS transistor, and the third MOS transistor are connected to an output terminal.

Abstract: A standard cell used for the logic synthesis and the routing of layout is configured by a logic circuit on an output side and a logic circuit on an input side, and a driving capacity of the logic circuit on the output side is made large while gate input capacitance of the logic circuit on the input side is made small.

Abstract: A multiplex gate driving circuit includes plural driving modules. In comparison with the prior art, each driving stage of the driving module has less number of transistors. From the first to the seventh example, each driving stage is implemented by only four transistors. In the eighth example and the ninth example, each driving stage is implemented by only two transistors. In other words, the driving stage of the multiplex gate driving circuit has less number of transistors, thereby reducing the layout area of the invisible zone of the LCD panel.

Abstract: A decoding circuit withstanding high voltage via a low-voltage MOS transistor, where negative high voltage that can be withstood can be as high as double what the transistor itself can withstand via two-stage CMOS inverters connected serially. When the negative high voltage is withstood, the source of a PMOS transistor in the CMOS inverter is switched to high resistance, and the substrate to the ground; the source of an NMOS transistor in the first CMOS inverter is connected with a half negative high voltage, and the source of an NMOS transistor in the second CMOS inverter with a negative high voltage; the first CMOS inverter, whose output is the half negative high voltage, is grounded at its input terminal, and output of the second CMOS inverter is the negative high voltage.

Abstract: Quad-state logic elements and quad-state memory elements are used to reduce the wiring density of integrated circuits. The resulting reduction in wiring interconnects between memories and logic elements results in higher speed, higher density, and lower power integrated circuit designs.

Abstract: A threshold voltage of a transistor is fluctuated because of fluctuation in film thickness of a gate insulating film or in gate length and gate width caused by differences of used substrates or manufacturing steps. In order to solve the problem, according to the present invention, there is provided a clocked inverter including a first transistor and a second transistor connected in series, and a compensation circuit including a third transistor and a fourth transistor connected in series.

Abstract: A normally operable decoder circuit is obtained without entailing a delay in decoding operation, an increase in circuit area, and an increase in circuit design cost. An NMOS transistor in a high-voltage circuit portion is inserted between the output of a NAND gate and a node, and receives an input signal at the gate electrode thereof. A load current generating portion in the high-voltage circuit portion includes PMOS transistors coupled in series between a high power supply voltage and the node. One of the PMOS transistor receives a control signal at the gate electrode thereof. The other PMOS transistor receives a control signal at the gate electrode thereof. An inverter receives a signal obtained from the node as an input signal, and outputs the inverted signal thereof as an output signal.

Abstract: A decoding circuit withstanding high voltage via a low-voltage MOS transistor, where negative high voltage that can be withstood can be as high as double what the transistor itself can withstand via two-stage CMOS inverters connected serially. When the negative high voltage is withstood, the source of a PMOS transistor in the CMOS inverter is switched to high resistance, and the substrate to the ground; the source of an NMOS transistor in the first CMOS inverter is connected with a half negative high voltage, and the source of an NMOS transistor in the second CMOS inverter with a negative high voltage; the first CMOS inverter, whose output is the half negative high voltage, is grounded at its input terminal, and output of the second CMOS inverter is the negative high voltage.

Abstract: The present invention discloses a decoding circuit withstanding high voltage via a low-voltage MOS transistor, where negative high voltage that can be withstood can be as high as double what the transistor itself can withstand via two-stage CMOS inverters connected serially. When the negative high voltage is withstood, the source of a PMOS transistor in the CMOS inverter is switched to high resistance, and the substrate to the ground; the source of an NMOS transistor in the first CMOS inverter is connected with a half negative high voltage, and the source of an NMOS transistor in the second CMOS inverter with a negative high voltage; the first CMOS inverter, whose output is the half negative high voltage, is grounded at its input terminal, and output of the second CMOS inverter is the negative high voltage. The present invention further discloses a method of implementing the decoding circuit and a memory circuit using the decoding circuit.

Abstract: The invention provides a low cost and high performance functional circuit by reducing time required for the repetition of logic synthesis and routing of layout in a functional circuit design. A standard cell used for the logic synthesis and the routing of layout is configured by a logic circuit on an output side and a logic circuit on an input side and a driving capacity of the logic circuit on the output side is made large while gate input capacitance of the logic circuit on the input side is made small. By forming the standard cell in this manner, a ratio that the gate delay occupies in the delay time of a functional circuit can be relatively increased. Therefore, even when wiring capacitance after the routing of layout is not estimated at high precision in advance, an operating frequency can be obtained at high precision in the logic synthesis as long as a gate delay of each standard cell can be estimated at high precision.

Abstract: A semiconductor integrated circuit includes an n-channel spin FET including one of a magnetic tunnel junction and a magneto-semiconductor junction, the n-channel spin FET including a gate terminal to receive an input signal, a source terminal to receive a first power supply potential, and a drain terminal connected to an output terminal, a p-channel FET including a gate terminal to receive a clock signal, a source terminal to receive a second power supply potential, and a drain terminal connected to the output terminal, a subsequent circuit connected to the output terminal, and a control circuit which turns on the p-channel FET to start charging the output terminal, then turns off the p-channel FET to end the charging, and supplies the input signal to the gate terminal of the n-channel spin FET.

Abstract: A normally operable decoder circuit is obtained without entailing a delay in decoding operation, an increase in circuit area, and an increase in circuit design cost. An NMOS transistor in a high-voltage circuit portion is inserted between the output of a NAND gate and a node, and receives an input signal at the gate electrode thereof. A load current generating portion in the high-voltage circuit portion includes PMOS transistors coupled in series between a high power supply voltage and the node. One of the PMOS transistor receives a control signal at the gate electrode thereof. The other PMOS transistor receives a control signal at the gate electrode thereof. An inverter receives a signal obtained from the node as an input signal, and outputs the inverted signal thereof as an output signal.

Abstract: A decoder circuit that can prevent the delay of decoder output includes a switch that is put into an ON state when a node A of an NMOS region is not an output channel of a selected gradation voltage. The switch is connected to the node A. Thus, a voltage raised by electric charges accumulated by a coupling capacity C1 caused in the node A when the gradation voltage is outputted from an output terminal of the decoder output can be discharged by the switch in the ON state.

Abstract: A matrix decoder is provided, which includes a plurality of first level shifters, a plurality of second level shifters, and a demultiplexer. The first level shifters and the second level shifters boost the voltages of inputted signals to the voltages required by high voltage components and output the boosted signals. One of the first level shifters receives a first logic state and outputs a fifth logic state. Each of the other first level shifters receives a second logic state and outputs a sixth logic state. One of the second level shifters receives a third logic state and outputs a seventh logic state. Each of the other second level shifters receives a fourth logic state and outputs an eighth logic state. The demultiplexer outputs a ninth logic state and a plurality of tenth logic states according to the logic states outputted by the first level shifters and the second level shifters.

Abstract: A normally operable decoder circuit is obtained without entailing a delay in decoding operation, an increase in circuit area, and an increase in circuit design cost. An NMOS transistor in a high-voltage circuit portion is inserted between the output of a NAND gate and a node, and receives an input signal at the gate electrode thereof. A load current generating portion in the high-voltage circuit portion includes PMOS transistors coupled in series between a high power supply voltage and the node. One of the PMOS transistor receives a control signal at the gate electrode thereof. The other PMOS transistor receives a control signal at the gate electrode thereof. An inverter receives a signal obtained from the node as an input signal, and outputs the inverted signal thereof as an output signal.

Abstract: The present invention provides a decoder circuit that can prevent the delay of decoder output. Namely, a switch that is put into an ON state when a node A of an NMOS region is not an output channel of a selected gradation voltage, is connected to the node A. Thus, a voltage raised by electric charges being accumulating by a coupling capacity C1 caused in the node A when the gradation voltage is outputted from an output terminal of the decoder output can be discharged by the switch in the ON state.

Abstract: In one embodiment, a decoder for decoding an address having a plurality of bits ranging from a first address bit a1 to a last address bit aN, each address bit being either true or false is provided that includes: a pre-charge circuit adapted to pre-charge a dynamic NOR node and a dynamic OR node and then allow the pre-charged dynamic NOR node and pre-charged dynamic OR node to float; a plurality of switches coupled between the dynamic NOR node and ground, each switch corresponding uniquely to the address bits such that the switches range from a first switch corresponding to a1 to an nth switch corresponding to aN, wherein any switch corresponding to a true address bit is configured to turn on only if its corresponding address bit is false, and wherein any switch corresponding to a false address bit is configured to turn on only if its corresponding address bit is true; a (n+1)th switch coupling the dynamic OR node to ground, the (n+1)th switch being controlled such that it turns on if the dynamic OR node is c

Abstract: Disclosed are a multi-functional integrated circuit and a source driver having the same. The integrated circuit (IC) chip includes: a first high-voltage transistor configured to precharge a storage node in response to a first control signal; a decoding unit configured to decode a plurality of input signals to output the decoded signal to the storage node; and a second high-voltage transistor configured to transfer an output of the decoding unit to the storage node in response to a second control signal.

Abstract: The decoder circuit includes: a power supply control circuit for supplying a first voltage; first and second transistors connected in series between the power supply control circuit and a first reference node; and third and fourth transistors connected between a connection node between the first and second transistors and a second reference node. The first transistor receives a first signal at its gate, and the second transistor receives a second signal corresponding to the first signal at its gate. The third transistor receives a third signal at its gate, and the fourth transistor receives a fourth signal corresponding to the third signal at its gate. The potential difference between the first voltage and the first reference node is smaller than the potential difference between the first reference node and the second reference node.

Abstract: The present invention discloses a decoding circuit withstanding high voltage via a low-voltage MOS transistor, where negative high voltage that can be withstood can be as high as double what the transistor itself can withstand via two-stage CMOS inverters connected serially. When the negative high voltage is withstood, the source of a PMOS transistor in the CMOS inverter is switched to high resistance, and the substrate to the ground; the source of an NMOS transistor in the first CMOS inverter is connected with a half negative high voltage, and the source of an NMOS transistor in the second CMOS inverter with a negative high voltage; the first CMOS inverter, whose output is the half negative high voltage, is grounded at its input terminal, and output of the second CMOS inverter is the negative high voltage. The present invention further discloses a method of implementing the decoding circuit and a memory circuit using the decoding circuit.

Abstract: The present invention relates to a circuit arrangement for processing a dual-rail signal, comprising data inputs for feeding at least one dual-rail data input signal, and respective data outputs for outputting a dual-rail data output signal using the at least one dual-rail data input signal. The circuit arrangement is designed in such a way that a dual-rail output signal with physical values corresponding to the physical values of the data input of the dual-rail data input signal is output at the data outputs when the dual-rail data input signal is fed to the data inputs with the same physical values for at least one signal pair.

Abstract: A novel methodology for the construction and operation of logical circuits and gates that makes use of and contact to a fourth (4th) terminal (substrates/bodies) of MOSFET devices is implemented by the present invention to realize a novel decode personalization. The novel construction and operation of the decode personalization provides for maintaining body-contacted MOSFET devices at a lower threshold voltage (VTh) when actively on (to increase overdrive and performance), and at a higher relative threshold voltage when off (to reduce leakage power). Because the threshold potential of a transistor moves inversely to its body potential, the body of each device is tied to the inverse of the device's drain voltage to achieve such a desirable threshold potential modulation effect for improved device, circuit, gate, decode personalization and logical family operation.

Abstract: There is provided a semiconductor device including an output buffer circuit which reduces an area occupied by a circuit for impedance adjustment and allows high-speed impedance adjustment. In an impedance measuring circuit, the impedance values of reference transistors having the same sizes as those of a plurality of transistors composing the output buffer circuit which are equal in size are measured. An impedance code generating circuit outputs impedance codes corresponding to the impedance values of the reference transistors to an output buffer code generating circuit based on the result of the measurement from the impedance measuring circuit. The output buffer code generating circuit generates output buffer codes for adjusting the impedance of the output buffer circuit by performing an arithmetic operation process to provide an objective impedance based on the impedance codes.

Abstract: A threshold voltage of a transistor is fluctuated because of fluctuation in film thickness of a gate insulating film or in gate length and gate width caused by differences of used substrates or manufacturing steps. In order to solve the problem, according to the present invention, there is provided a clocked inverter including a first transistor and a second transistor connected in series, and a compensation circuit including a third transistor and a fourth transistor connected in series.

Abstract: The decoder circuit includes: a power supply control circuit for supplying a first voltage; first and second transistors connected in series between the power supply control circuit and a first reference node; and third and fourth transistors connected between a connection node between the first and second transistors and a second reference node. The first transistor receives a first signal at its gate, and the second transistor receives a second signal corresponding to the first signal at its gate. The third transistor receives a third signal at its gate, and the fourth transistor receives a fourth signal corresponding to the third signal at its gate. The potential difference between the first voltage and the first reference node is smaller than the potential difference between the first reference node and the second reference node.

Abstract: The invention provides a low cost and high performance functional circuit by reducing time required for the repetition of logic synthesis and routing of layout in a functional circuit design. A standard cell used for the logic synthesis and the routing of layout is configured by a logic circuit on an output side and a logic circuit on an input side and a driving capacity of the logic circuit on the output side is made large while gate input capacitance of the logic circuit on the input side is made small. By forming the standard cell in this manner, a ratio that the gate delay occupies in the delay time of a functional circuit can be relatively increased. Therefore, even when wiring capacitance after the routing of layout is not estimated at high precision in advance, an operating frequency can be obtained at high precision in the logic synthesis as long as a gate delay of each standard cell can be estimated at high precision.

Abstract: Techniques are provided for calibrating on-chip termination impedances on integrated circuits. An on-chip termination (OCT) calibration circuit generates calibration codes that selectively control the conductive states of a set of transistors coupled in parallel. The OCT calibration circuit selects a calibration code that causes the impedance of the transistors to be near a matching impedance. The selected calibration code controls an on-chip termination impedance at a pin. According to some embodiments, the OCT calibration circuit compares a signal from the transistors to two or more reference signals to improve the tolerance range of the calibrated on-chip termination impedance. According to other embodiments, the OCT calibration circuit selects a calibration code based on a signal from the transistors after an extra transistor is turned on by a control signal. The control signal is not used to control the on-chip termination impedance.

Abstract: Systems and methods are disclosed herein for decoder applications. For example, in accordance with an embodiment of the present invention, an integrated circuit includes a decoder that receives a plurality of input signals and partially decodes the input signals based on their true and complement values to provide a plurality of decoded signals. The decoded signals, for example, may be utilized to control a multiplexer.

Abstract: An XOR circuit designed in dual rail includes four shunt transistors, wherein the shunt transistors are disposed to couple an input potential at a first input or a second input with an output.

Abstract: A threshold voltage of a transistor is fluctuated because of fluctuation in film thickness of a gate insulating film or in gate length and gate width caused by differences of used substrates or manufacturing steps. In order to solve the problem, according to the present invention, there is provided a clocked inverter including a first transistor and a second transistor connected in series, and a compensation circuit including a third transistor and a fourth transistor connected in series.

Abstract: A logic basic cell, a logic basic cell arrangement, and a logic device. A logic basic cell is provided for forming a logic combination of two data signals in accordance with a logic function that can be selected by means of a plurality of logic selection elements, having four data signal inputs, to which two data signals and the logically complementary data signals thereof can be applied, and having six logic selection elements between the data signal inputs. At a data signal output, the logic combination of the two data signals in accordance with the logic function selected by means of the logic selection elements can be provided as output signal.

Abstract: A capacitance type humidity sensor includes: a detection substrate including a detection portion on a first side of the detection substrate; and a circuit board including a circuit portion. The detection portion detects humidity on the basis of capacitance change of the detection portion. The circuit portion processes the capacitance change as an electric signal. The detection substrate further includes a sensor pad on a second side of the detection substrate. The sensor pad is electrically connected to the detection portion through a conductor in a through hole of the detection substrate.

Abstract: A system for reducing a transition short circuit current in an inverter circuit includes a first inverter and a variable resistor set. The first inverter includes a first output node, a first PMOS device, and a first NMOS device. The variable resistor set biases the first inverter such that the first PMOS device is switched at a first time and the first NMOS device is switched at a second time, thereby substantially reducing the transition short circuit current. A method for reducing the transition short circuit current and a buffer circuit also are described.