Abstract: A push-pull pulse register circuit. The push-pull pulse register circuit includes a first logic inverter having first-inverter input and first-inverter output, a second logic inverter having second-inverter input and second-inverter output, a third logic inverter having third-inverter input and third-inverter output and configured to receive logic input data at the third-inverter input, a first logic gate having first-gate input, first-gate output, and first-gate control input, and a second logic gate having second-gate input, second-gate output, and second-gate control input.

Abstract: A booster circuit for reducing the nominal latency of a logic gate. The booster circuit includes a charge sharing mechanism to transfer a stored charge to the output of the logic gate in response to a logic state transition on the input of the logic gate. The transfer of stored charge also reduces the charge drawn from the supply during the output transition.

Abstract: A semiconductor integrated circuit device has a combinational logic circuit including one or plural logic cells connected in series.

Abstract: A data acceleration device may include a pull-up driver for driving a pull-up in response to the signal level on a first node, a pull-down driver for driving a pull-down in response to the signal level on the first node, a first pull-up circuit for pull-up driving a second node which is electrically coupled with the first node, in response to an output signal from the pull-up driver, a first pull-down circuit for pull-down driving the second node, in response to an output signal from the pull-down driver, a delay circuit for delaying a signal from the second node by a preset time to output a delayed signal, a first switch for switching an operation of the first pull-up circuit in response to an output signal from the delay circuit, and a second switch for switching an operation of the first pull-down circuit in response to the output signal from the delay circuit. Also, there is presented a data transmission apparatus including the data acceleration device.

Abstract: Since voltages of two input terminals of an output unit having an online download function are decided by voltages which are not correlative to each other, a value of an incoming current on the start-up becomes large. The present invention solves the problem of turning-on of a parasitic transistor due to a transitional minus potential even when the voltage of the output unit on a stationary state is set to 0 V in order to reduce the incoming current. In this invention, a switch is turned on and off by a download switching digital signal, and an input from a delay circuit for charging and discharging a condenser in the delay circuit whose one end is connected to a reference potential is input to one of the input terminals of the output terminal while the reference potential is applied to the other input terminal of the output unit. Thus, an input error in the output unit is reduced to prevent an excessive incoming current.

Abstract: A signal for the single-wire circuit is inputted and separated into two signals by the input separator circuit and the two signals are inputted in parallel into the two-wire transmitter circuit comprises at least one set of logic gates in which a P-channel CMOS transistor and a N-channel CMOS transistor whose size is different from that of the P-channel CMOS transistor are complementarily connected. The two-wire transmitter circuit outputs a first signal speeded up the rising transition time thereof from one of the logic gates and also outputs a second signal speeded up the falling transition time thereof from the other of the logic gates. The output converter circuit inputs in parallel the first signal and the second signal outputted from the two-wire transmitter circuit and converts them into a signal for the single-wire circuit.

Abstract: A high speed switch. The novel switch includes an input circuit having a transistor Q1 for receiving an input signal, a first mechanism for providing a path from an output of Q1 to an output terminal, and a second mechanism for receiving a control signal and in accordance therewith reducing the conductivity of the path during a mute mode. The first mechanism includes a first circuit for providing a first path from an output of Q1 to a first node, and a second circuit for providing a second path connecting the first node to the output terminal. The second mechanism is adapted to apply a signal to the first node during the mute mode such that the first and second circuits are off or partially conducting. The switch also includes a circuit for clamping the first node to a first predetermined voltage during the mute mode.

Abstract: A P channel MOS transistor and an N channel MOS transistor turned on/off in response to an input signal in an active state as well as an N channel MOS transistor connected between an output node and the N channel MOS transistor and turned on/off in response to a control signal are provided. The input signal is at the L level in a standby state. The control signal is at the L level in the standby state and at the H level in the active state. This suppresses the effect of hot carriers in the active state and decreases a subthreshold current in the standby state.

Abstract: A CMOS switching circuit that includes a charge reservoir and a multiplexer connected to the charge reservoir. The multiplexer receives control signals from a delay line and a control signal line, and it delivers a switching signal to an output terminal. A first set of signals delivered to the control terminals of the multiplexer causes the charge reservoir to deliver charge to the output terminal, and a second set of signals delivered to the control terminals causes charging of the charge reservoir. With the charge reservoir, charge from falling signals is conserved and used to help rising signals at the output, reducing the power required to provide an output switching signal.

Abstract: The method for powering down a circuit for a data retention mode includes: changing a supply voltage node from an active power voltage level to an inactive power level; coupling a source of a P channel device to the supply voltage node; providing a retaining power supply voltage level to a back gate of the P channel device; changing a drain voltage of the P channel device to a reference voltage level, wherein the reference voltage level is different from the retaining power supply voltage level; and changing a gate voltage of the P channel device to the reference voltage level.

Abstract: A multi-threshold integrated circuit (IC) with reduced subthreshold leakage and method of reducing leakage. Selectable supply switching devices (NFETs and/or PFETs) between a logic circuit and supply connections (Vdd and Ground) for the circuit have higher thresholds than normal circuit devices. Some devices may have thresholds lowered when the supply switching devices are on. Header/footer devices with further higher threshold voltages and widths may be used to further increase off resistance and maintain/reduce on resistance. Alternatively, high threshold devices may be stacked to further reduce leakage to a point achieved for an even higher threshold. Intermediate supply connects at the devices may have decoupling capacitance and devices may be tapered for optimum stack height and an optimum taper ratio to minimize circuit leakage and circuit delay.

Abstract: The invention includes digital logic devices with extremely skewed trip points and reset circuitry for rapidly propagating signal edges. Embodiments of skewed logic devices in accordance with the present invention include inverters, buffers, NOR gates and NAND gates for rapidly propagating a selected “fast” edge of an input signal. Additional embodiments include pulse stretchers, memory devices, substrates, computer systems and methods incorporating the skewed logic devices of the present invention. Each embodiment of a skewed logic device of the present invention is configured to propagate either a fast rising edge or fast falling edge of an output signal, i.e., the “fast” edge, at rates comparable to those of domino logic. An advantage of the skewed logic devices of the present invention over conventional CMOS logic devices is rapid edge propagation. Additionally, virtually all of the input gate loading is devoted to the fast edge being propagated.

Abstract: An integrated circuit is disclosed that includes one or more blocks of switching logic (comprised of transistors) connected between a power supply and a common node. A control transistor connects the common node to ground. The control transistor has a higher threshold voltage level than the voltage threshold level(s) of the transistors that comprise the switching logic blocks. A bias generator provides a positive bias to the body of the control transistor when the control transistor is “on.” Further disclosed is an integrated circuit comprising a first plurality of serially connected transistors establishing a first current path from a voltage source to ground and a second plurality of serially connected transistors establishing a second current path from the voltage source to ground. The first and second plurality of transistors each includes at least one high-threshold transistor.

Abstract: A technique for reducing leakage current in static CMOS devices by adding additional transistors in series between selected inverters or logic gates and ground or power. NMOS and PMOS transistors are added to selected buffers comprised of two inverters in series. The PMOS transistor is connected between the first inverter and power and the NMOS transistor is connected between the second inverter and ground. The added transistors are controlled by a memory cell to be on when the buffer is being used and off when the buffer is unused. Alternatively, no PMOS transistor is added and an existing PMOS transistor of the first inverter is manufactured to sit in a Vgg well. The same techniques are employed with selected buffer pairs and logic gates.

Abstract: A P channel MOS transistor and an N channel MOS transistor turned on/off in response to an input signal in an active state as well as an N channel MOS transistor connected between an output node and the N channel MOS transistor and turned on/off in response to a control signal are provided. The input signal is at the L level in a standby state. The control signal is at the L level in the standby state and at the H level in the active state. This suppresses the effect of hot carriers in the active state and decreases a subthreshold current in the standby state.

Abstract: According to one exemplary embodiment, a buffer circuit is configured to receive a supply voltage and an input reference voltage, the buffer circuit has a first FET operating in saturation region where the source of the first FET is coupled to the output reference voltage. The first FET can be configured, for example, as an open-loop voltage follower and, by way of example, a first resistor can be used to couple the source of the first FET to the output reference voltage. A tracking circuit is connected to the buffer circuit. The tracking circuit comprises a second FET also operating in saturation region where the drain of the second FET is coupled to the output reference voltage. Both the first and second FETs can be, for example, depletion mode transistors.

Abstract: In a standard cell, rise time when an output transitions from a low-level voltage to a high-level voltage and fall time when an output transitions from the high-level voltage to the low-level voltage differ from each other. A flip-flop outputs a first input signal, which is input in a cycle immediately before a clock in synchronization with one of rise and fall of the clock, to the standard cell and then fixes an output the signal at one of a high-level voltage and a low-level voltage. Before a second input signal, which is output from the flip-flop after the first input signal, reaches the standard cell, an output of the standard cell is set at one of a high-level voltage and a low-level voltage, which corresponds to a signal whose transition speed is slow, by one of the high-level voltage and the low-level voltage that is output from the flip-flop.

Abstract: The invention is related to methods and apparatus for driving transistors. One embodiment includes a driver circuit that can drive power transistors at relatively high switching speeds, which can advantageously decrease the size of associated electronics systems that use the driver circuit and power transistors. Embodiments of the invention can drive a switching device that needs a negative voltage bias in order to be shut off. For example, the switching device can correspond to a junction field effect transistor (JFET). Advantageously, one embodiment of the invention can drive such switching devices on and off from a single positive voltage supply.

Abstract: A CMOS line driver is made up of p- and nMOS transistors. A pMOS varactor is interposed between the source of the pMOS transistor and a power supply, while an nMOS varactor is interposed between the source of the nMOS transistor and ground. The sizes of each of these MOS varactors may be the same as those of the p- or nMOS transistor. Alternatively, each of these MOS varactors may have a channel area twice greater than that of the p- or nMOS transistor. The inverted version of a signal input to the line driver is supplied to the gates of the MOS varactors. In this manner, the MOS transistors, making up the line driver, can switch at a high speed.

Abstract: An MOS-type semiconductor integrated circuit has two MOS transistors of the opposite conductivity channel types connected in series between a high-voltage potential terminal and a ground potential terminal. Those two MOS transistors constitute an inverter and their gates are connected together to an input node. As output nodes, first and second nodes are provided with a current path in between which includes transistors whose gates are connected to the high-voltage potential terminal. A current path including the first transistor which constitutes a switch is inserted between the first node and the output node, and a current path including the second transistor and a barrier transistor is inserted between the second node and the output node. The gates of the first and second transistors are respectively connected with complementary clock signals. The bate of the barrier transistor is connected to the high-voltage potential terminal.

Abstract: An MOS-type semiconductor integrated circuit has two MOS transistors of the opposite conductivity channel types connected in series between a high-voltage potential terminal and a ground potential terminal. Those two MOS transistors constitute an inverter and their gates are connected together to an input node. As output nodes, first and second nodes are provided with a current path in between which includes transistors whose gates are connected to the high-voltage potential terminal. A current path including the first transistor which constitutes a switch is inserted between the first node and the output node, and a current path including the second transistor and a barrier transistor is inserted between the second node and the output node. The gates of the first and second transistors are respectively connected with complementary clock signals. The bate of the barrier transistor is connected to the high-voltage potential terminal.

Abstract: A semiconductor integrated circuit that is well-balanced between increased operating speed and decreased power consumption caused by a leakage current. The gate cells of the circuit comprised of low threshold voltage MOSs are used for logic gates provided with three or more inputs, and gate cells comprised of high threshold voltage MOSs are generally used for logic gates provided with one or two inputs, sometimes on a case-by-case basis.

Abstract: A logic circuit and associated method are provided to improve the switching performance of integrated circuit devices. The logic circuit includes a pass transistor logic circuit, a CMOS transistor pair connected as an inverter and having an input coupled to the output of the pass transistor logic circuit, a clocking transistor coupled between the inverter and a potential terminal to selectively enable the inverter according to a first clocking signal, and a precharge transistor coupled between the inverter output and a potential terminal to precharge the inverter output low according to a second clocking signal.

Abstract: A technique for reducing the power consumed by a clock driver circuit involves selecting between a first power supply path and a second power supply path in response to a power reduction signal. A driver circuit drives an output clock signal from the selected one of the first power supply path and the second power supply path. By reducing the voltage on one of the first power supply path and the second power supply path, the power consumed by the clock driver circuit may be selectively reduced.

Abstract: A high voltage switching device includes a switching circuit for switching a high voltage to an output line and for providing a control signal. The high voltage switching device also includes a switching transistor connected to the switching circuit for switching a low voltage to the output line based upon the control signal. The output signal is controlled by a control circuit that sets up a control loop between the drop in the gate voltage level of the switching transistor and the voltage level of the output line that is controlled by the switching circuit.

Abstract: A semiconductor integrated circuit having an active mode and a standby mode includes a node at which an internal circuit is connected to a latch circuit, the latch circuit storing a data signal output from the internal circuit. A level determination unit determines a logic level of the node in response to a control signal indicating the standby mode.

Abstract: A repeater circuit for detecting and accelerating the transitioning edge of a signal on a bi-directional bus. The repeater includes rising and falling edge detectors for detecting a change in the potential level of the bi-directional bus and does not require logic for determining the direction of propagation of the signal. The edge detectors subsequently activate a drive circuit for accelerating the potential level transition of the signal on the bi-directional bus. A buffer circuit can be placed between the edge detectors and the bi-directional bus to ensure that any transition on the bi-directional bus is an intended signal transition and not a voltage spike.

Abstract: An output buffer having one or more of the following advantages: (1) faster slew rate, (2) reduced switching noise during signal transitions, and (3) improved switching time. The output buffer includes a pair of output transistors. At least one of the output transistors is designed with dynamically adjustable beta that allows for robust control of the output buffer operating characteristics. The beta can be adjusted by changing the size of the output transistor. Transistor size can be changed, in turn, by enabling and disabling additional output transistor(s).

Abstract: A sensor signal processing apparatus includes a sensor section, power supply section, switching section, and CPU. The characteristics of the sensor section change in accordance with a change in physical quantity to be measured. The power supply section supplies powers of two systems having different polarities to the sensor section. The switching section is connected between the power supply section and the sensor section to switch combinations of powers of the two systems from the power supply section while preventing mixing of powers of the two systems. The CPU obtains the ratio between the differences between a plurality of signals output from the sensor section for every switching operation of the switching section.

Abstract: A level converting apparatus for converting an original voltage level to a wanted voltage level is disclosed. The level converter includes a converting part for outputting a level-converting signal having a different level from that of an input signal in response to an input signal; a delay part for delaying the level-converted signal of the converting part by a predetermined time; and a self-reset part for generating a reset signal in response to the delayed level-converted signal of the delay part to output it to the converting part so that a pulse width of the level-converted signal as output is set as much as the sum of a predetermined delay time and an internal operation delay time.

Abstract: Provided is a semiconductor device including an input/output buffer or an output buffer with a buffer transistor. The device can control the switching speed of the buffer transistor into a proper value even when there is an change in process conditions and/or temperature. The device includes a control circuit for changing the size of the buffer transistor. The control circuit changes the size of the buffer transistor based on the switching speed of the buffer transistor or a detection transistor, which speed changes in accordance with process conditions and/or temperature.

Abstract: An amplifier includes differential input transistors, first switches arranged between each gates and source of the differential input transistors, a second switch arranged to turn on/off a current source that gives the bias of the differential input transistors, and a drive circuit arranged to turn off the second switch and turns on the first switches when the current of the current source is not supplied to the differential input transistors.

Abstract: A balanced switching circuit comprises a plurality of transfer gates, each transfer gate having an input terminal, an output terminal, and at least one control terminal adapted to receive a control signal. Each transfer gate, which may be comprised of pass transistors such as n- and p-channel metal oxide semiconductor (MOS) transistors, is operable to couple the input terminal to the output terminal in response to the control signal. The plurality of transfer gates are arranged in N rows and N columns with the input and output terminals of the N transfer gates in each row connected in series between a first signal terminal and a second signal terminal. Each transfer gate has its control terminal connected to one of N clock terminals adapted to receive respective clock signals. Each clock terminal is coupled to the control terminal of only one transfer gate in each row and only one transfer gate in each column.

Abstract: A memory device including a balanced switching circuit and methods for controlling an array of transfer gates. The balanced switching circuit comprises a plurality of transfer gates. The plurality of transfer gates are arranged in N rows and N columns with the N transfer gates in each row connected in series between a first signal terminal and a second signal terminal. Each one of N clock terminals is coupled to a respective control terminal of only one transfer gate in each row and only one transfer gate in each column. The transfer gates are selectively clocked or activated in response to clock signals to couple the first signal terminal to the second signal terminal such that the switching speed is independent of the order in which the individual series connected pass transistors or transfer gates are activated.

Abstract: A buffer with an adjustable slew rate, including a current driver having an input terminal and an enable circuit connected to the input terminal to selectively enables the current driver. In one embodiment, the current driver includes an input terminal and the enable circuit includes a memory element, the state of which is used to activate the enable signal, a read circuit which reads the state of the memory element, a latch which latches the signal from the read circuit, and an output circuit connected to the input terminal of the current driver which provides a signal which selectively enables the current driver to adjust the slew rate.

Abstract: A logic cell capable of realizing a high speed logic operation without using a pipeline register and capable of realizing a simplification of the circuit structure and a lowering of the power consumption, and a logic circuit using the same, wherein an input register converts an input data to a two-wire code synchronous to a clock signal and supplies the same to a logic cell array, each logic cell of the logic cell array performs a predetermined logic operation, when an output code of a monitor cell changes to a valid logic code, an early completion detection signal output from a NOR gate becomes “L”, the input register is reset in accordance with this, and the output becomes a blank code, the blank code is propagated by the logic cell array, and when the output of the monitor cell changes to the blank code, the output of the NOR gate becomes “H”, the reset is released, and the input register supplies the input data to the logic cell array.

Abstract: A low voltage 485-driver circuit that meets the standard leakage and 1.5 voltage differential output requirements of the TIA/EIA-485 specification while operating from a 3V supply. The circuit avoids the voltage drop across the series Schottky diodes in the output driver of a conventional 485-driver by moving the Schottky blocking diodes from the output stage signal path to the pre-driver stage so that the output stage is restricted to back-gate biasing only. In addition, the circuit uses stacked NMOS transistors to maintain lower voltage across each NMOS transistor in order to prevent hot-carrier injection. This allows lower voltage rated output NMOS transistors to be used, resulting in higher speed operation. The circuit will withstand excessive common mode voltages in the range of +12V to −7V applied to the output while in either signaling ON state or the disabled OFF state.

Abstract: An MOS-type semiconductor integrated circuit has two MOS transistors of the opposite conductivity channel types connected in series between a high-voltage potential terminal and a ground potential terminal. Those two MOS transistors constitute an inverter and their gates are connected together to an input node. As output nodes, first and second nodes are provided with a current path in between which includes transistors whose gates are connected to the high-voltage potential terminal. A current path including the first transistor which constitutes a switch is inserted between the first node and the output node, and a current path including the second transistor and a barrier transistor is inserted between the second node and the output node. The gates of the first and second transistors are respectively connected with complementary clock signals. The bate of the barrier transistor is connected to the high-voltage potential terminal.

Abstract: A buffer having first and second input terminals and an output terminal. The buffer also includes a fast edge driver having an input terminal and an output terminal, with the input terminal connected to the first input terminal of the buffer, and the output terminal connected to the output terminal of the buffer. A shielding circuit is provided having an input terminal and an output terminal, with the input terminal connected to the second input terminal of the buffer. The buffer further includes a recovery circuit having an input terminal and an output terminal, with the input terminal connected to the output terminal of the shielding circuit, and the output terminal connected to the output terminal of the buffer.

Abstract: A low power consuming circuit is provided which is capable of reducing power consumption by using a Vt (threshold voltage) characteristic of a MIS (Metal Insulator Semiconductor) transistor for generating a source voltage. N-channel transistors making up an inverter is configured by being stacked vertically. An N-channel transistor source voltage control circuit controls voltages so that a gate voltage of an N-channel transistor source voltage bias transistor existing in a lower state is transferred to a drain voltage terminal of the N-channel transistor source voltage bias transistor or to a supply voltage terminal.

Abstract: A translator includes an initial circuit device configured to charge a translator output to a first voltage level in response to a change in an input signal. The translator further includes a sensing device configured to detect the output's potential approaching the first voltage level and smoothly shift charging functions over to a secondary circuit device, which will continue to charge the output up to a second voltage level.

Abstract: A translator includes an initial circuit device configured to charge a translator output to a first voltage level in response to a change in an input signal. The translator further includes a sensing device configured to detect the output's potential approaching the first voltage level and smoothly shift charging functions over to a secondary circuit device, which will continue to charge the output up to a second voltage level.

Abstract: A logic circuit and associated method are provided to improve the switching performance of integrated circuit devices. The logic circuit includes a pass transistor logic circuit, a CMOS transistor pair connected as an inverter and having an input coupled to the output of the pass transistor logic circuit, a clocking transistor coupled between the inverter and a potential terminal to selectively enable the inverter according to a first clocking signal, and a precharge transistor coupled between the inverter output and a potential terminal to precharge the inverter output low according to a second clocking signal.

Abstract: An electric current switch circuit in accordance with the present invention is arranged so that an output of an IIL logic circuit is connected with the base of the first transistor of NPN type that switches ON or OFF the electric current. The first constant current source and the second transistor cause the first transistor to switch ON during a period when the output of the IIL logic circuit is in an OFF state, to switch OFF during a period when the output of the IIL logic circuit is in an ON state. Thus, only a voltage of 0.9V to 1.1V (the sum of a drop voltage across the first resistor and the base-emitter voltage) is applied to the base of the first transistor. Accordingly, a voltage less than the withstand voltage of the IIL logic circuit is applied to the base of the first transistor.

Abstract: A receiver circuit includes a first circuit having two modes of operation controlled by a feedback loop. The feedback loop is connected to an output of the first circuit, and the modes of operation include a first mode having a quicker response to an input falling signal edge than a second mode and a second mode with a quicker response to an input rising signal edge than the first mode. A driver stage is integrated into the first circuit to favor the rising edge or the falling edge in accordance with a control signal provided by the feedback loop.

Abstract: A circuit and method for providing a fast transitioning output buffer that may be configured to operate using either a 3 volt or 5 volt supply voltage. The pullup behaves similarly to a MOS diode, but the circuit lowers the gate voltage on a pullup while the output is being pulled up. The circuit does not affect the final pullup voltage. As a result, a single PMOS device may be used as a pullup device that does not generally require an increased size to support a high operating voltage.

Abstract: Provided is a semiconductor device including an input/output buffer or an output buffer with a buffer transistor. The device can control the switching speed of the buffer transistor into a proper value even when there is an change in process conditions and/or temperature. The device includes a control circuit for changing the size of the buffer transistor. The control circuit changes the size of the buffer transistor based on the switching speed of the buffer transistor or a detection transistor, which speed changes in accordance with process conditions and/or temperature.

Abstract: Disclosed is a system for reducing propagation delays caused by capacitive coupling of RC interconnects. The system comprises a first interconnect utilized for propagating signals, a second interconnect also utilized for propagating signals but which propagates signals at a faster rate than the first interconnect, and a charge dumping circuit with an input coupled to a point on the second interconnect and an output coupled to a corresponding point on the first interconnect. The charge dumping circuit includes a pulse generation circuit and a select-signal generation circuit, both of which are utilized to enable charge to be dumped from the second interconnect to the first interconnect to increase switching times of the signals propagating on the first interconnect and improve overall propagation speed.

Abstract: A semiconductor integrated circuit device is composed of logic gates each provided with at least two MOS transistors. The logic gates are connected to a first potential point and a second potential point. The semiconductor integrated circuit device includes a current control device connected between the logic gate and the first potential point and/or between the logic gate and the second potential point for controlling a value of a current flowing in the logic gate depending on an operating state of the logic gate. The circuit can be used in devices that cycle in operation between high and low power consumption modes, such as microprocessors that have both an operation mode and a low power back-up or sleep mode used for power reduction.

Abstract: An array of multiple off chip drivers on an integrated circuit (IC) chip has reduced synchronous switching output timing error (TSSO) at high speeds of operation. The array includes a pair of low resistance buses to provide charge and discharge paths for the outputs, a plurality of terminals connecting the respective drivers between the buses, the resistance of each terminal being substantially greater than the resistance of either bus, and a plurality of capacitors connected internally of the respective drivers. Each driver has an input for receiving binary data from a memory unit and an output terminal which is switched in accordance with the binary input data to a higher or lower voltage level. There are a plurality of transistor switches within each driver which selectively couple a capacitor to the output terminal when it is driven high and at the same time couple another capacitor to one of the buses, and vice versa when the output terminal is driven low.