Abstract: According to one embodiment of the present invention, a circuit is disclosed. The circuit includes a plurality of driver slices, a portion of the plurality of the devices being used to provide a target impedance; a digital matching logic to select the portion of the plurality of the driver slices; and an analog matching circuit to produce a bias voltage to match pull-up and pull-down.

Abstract: A programmable device includes a plurality of programmable blocks each associated with a distributed memory block. The programmable blocks may be configured as logic or memory. The addressing circuitry for each distributed memory block may be shared with its associated programmable block or may be separate.

Abstract: A semiconductor integrated circuit wherein the circuit area can be minimized, and defects can be detected reliably during a standby status while maintaining the reliability of a gate oxide film. Switching circuit 20 is provided between logic circuit 10 and source voltage Vdd supply terminal. While in an operating status, 0 V voltage is applied to the gate of transistor MP0 of switching circuit 20, and bias voltage VB equal to or slightly lower than source voltage Vdd is applied to its channel region in order to reduce the threshold voltage of transistor MP0 and increase its current driving capability.

Abstract: A high voltage reset circuit with blooming control that increases the dynamic range of a CMOS image sensor and prevents blooming from occurring in output images. The circuit includes a high voltage supply circuit and a high voltage level shifter circuit. The high voltage supply circuit is configured to supply a voltage to the shifter circuit. The voltage has a voltage level higher than the absolute maximum voltage of the associated fabrication process. The shifter circuit is configured to output a high reset signal based on a reset signal generated to reset a pixel circuit of a pixel array. Instead of the reset signal, the high reset signal is coupled to a gate of the reset transistor in the pixel circuit. The high reset signal allows the reset transistor to maintain a gate to source potential less than the absolute maximum voltage even when the high reset signal is greater than the absolute maximum voltage.

Abstract: A value to better match a termination circuit to a characteristic impedance of a bus signal line is determined. A determination is also made as to when a bus, that includes the line and that is being used by a bus agent in its normal mode of operation, will be available for adjusting the termination circuit in a Quiet Cycle, based at least on knowledge of the bus protocol and tracking of certain bus protocol events. The termination circuit is adjusted according to the determined value, during the Quiet Cycle.

Abstract: Power dissipation of a semiconductor integrated circuit chip is reduced when it is operated at an operating voltage of 2.5 V or below. A switching element is provided in each circuit block within the chip. Constants of the switching element are set so that leakage current in each switching element in their off-state is smaller than the subthreshold current of MOS transistors within the corresponding circuit block. Active current is supplied to active circuit blocks, while switching elements of non-active circuit blocks are turned off. Thus, dissipation currents of non-active circuit blocks are limited to leakage current value of corresponding switching elements. Thus, the sum of dissipation currents of non-active circuit blocks is made smaller than the active current in the active circuit blocks. As a result, power dissipation in the semiconductor integrated circuit chip can be reduced even in the active state.

Abstract: An input buffer circuit includes front stage circuits and a succeeding stage circuit. Each of the front stage circuits has a logic threshold voltage different from each other. The succeeding stage circuit has a P type MOS transistor and an N type MOS transistor connected in series. The succeeding circuit includes inputs connected to the front stage circuit. A logic threshold voltage of the succeeding stage circuit is set to be between the respective logic threshold voltages of the front stage circuits.

Abstract: An apparatus and method for reducing leakage current of transistors used in an integrated circuit, which selectively switch a processor circuit in the integrated circuit to a standby state. A cooling device is included and selectively located in an area of the integrated circuit that is in close proximity to a transistor used to switch a processor circuit between active and standby states. The cooling device cools the transistor in order to improve both its leakage and active current states, thereby increasing efficiency of the transistor and reducing its leakage current.

Abstract: A system includes a bus and a circuit for precharging the bus. The circuit may be coupled to receive a clock signal associated with the bus, and may be configured to precharge a bus during an interval of the period of the clock signal, the interval being between a first edge (rising or falling) and the subsequent edge (falling or rising). A second interval within the period and excluding the interval may be used to perform a bus transfer. In this manner, both precharging and transfer may be performed in the same clock cycle. Bandwidth of the bus may be improved since transfers may occur each clock cycle, rather than having a non-transfer clock cycle for precharging.

Abstract: Provided are an on-chip termination apparatus in a semiconductor integrated circuit, and a method for controlling the same. The on-chip termination apparatus is installed in a semiconductor integrated circuit that has an output driver for outputting data to the outside via a pad and a data input circuit for receiving data from the outside via the pad. The on-chip termination apparatus includes an on-chip terminator including at least one terminal resistor electrically connected to the pad; and a terminator control circuit for turning on or off the on-chip terminator in response to an output enable signal that enables or disables the data output circuit, wherein the terminator control circuit turns off the on-chip terminator in the event that the data output circuit is enabled. Therefore, the on-chip termination apparatus is controlled by an output enable signal, thereby reducing timing loss, thus enabling a system to operate at high speed.

Abstract: A semiconductor package contains at least one electrically isolated channel. The isolated channel is minimally susceptible to crosstalk from other channels in the package. Specifically, the level of crosstalk that may impinge on the isolated channel is below an acceptable threshold so as to permit the isolated channel to function correctly. The semiconductor package may be a FET switch assembly and the isolated channel may be used for a clock signal to prevent crosstalk contamination caused by the data signals.

Abstract: A method and circuit for mitigating gate leakage during a sleep state. An input pattern may be applied to one or more of a plurality of devices in a circuit, e.g., static circuit, dynamic circuit, during a sleep state. In response to the application of the input pattern, a majority of the devices in the circuit may have a substantially identical voltage at each of its terminals, i.e., the source, gate and drain terminal, thereby mitigating gate leakage.

Abstract: A logic circuit employs a shunt peaked technique to enhance the switching speed of the circuit without an increase in power dissipation. A differential logic gate implements a digital circuit function. The shunt peaked logic circuit includes two resistive and two inductive elements. For each differential output line, a resistive element is coupled in series to an inductive element so as to couple the circuit power supply voltage to a differential output line. Under this configuration, the bandwidth of the logic circuit is increased without an increase in power consumption. The logic circuit may be implemented using CML or ECL logic.

Abstract: An active termination circuit for clamping a signal on a transmission line in an electronic device is described. The active termination circuit is configured to clamp the signal on the transmission line to one of a first reference voltage level and a second reference voltage level. In one embodiment, the active termination circuit includes a bottom clamping transistor coupled to a first potential having a bottom clamping transistor control node arranged for clamping the signal at about a first reference voltage. The active termination circuit also includes a top clamping transistor coupled to a second potential having a top clamping transistor control node arranged for clamping the signal at about a second reference voltage as well as an inverter unit coupling the transmission line to stabilizing capacitors for stabilizing control node voltages.

Abstract: Various apparatuses and methods are described that include a variable-impedance matched termination pair coupled to differential signaling bus pair. In an embodiment, the differential signaling bus pair includes a first bus and a second bus. The variable-impedance matched termination pair includes a first variable-impedance component and a second variable-impedance component. The impedance value of each variable-impedance component depends on the voltage level sensed by that variable-impedance component. The first variable-impedance component couples to the first bus. The second variable-impedance component couples to the second bus. The first variable-impedance component is electrically isolated from the second variable-impedance resistor.

Abstract: An output buffer circuit comprises an input terminal, an output terminal first and second inverters, a pull up control circuit, a pull down control circuit and first and second output transistors. Each of the first and second inverters is connected to the input terminal for outputting a signal having a slow rise up and fall down characteristic. Both of the pull up and pull down control circuits are connected to the input terminal and the output terminal. The pull up control circuit pulls up an output voltage of the first inverter when the output signal of the first inverter has a level lower than a first threshold voltage level. The pull up control circuit stops the pull up operation when the level of the output signal of the first inverter exceeds the first threshold voltage level. The pull down control circuit pulls down an output voltage of the second inverter when the output signal of the second inverter has a level higher than a second threshold voltage level.

Abstract: The disclosure presents a device comprising a driver configured to transmit a signal on a bus line, including a driver element configured to pull against termination impedance. The impedance of the driver element is dynamically adjustable. The disclosure also presents a method of electronically adjusting the impedance of the driver element to regulate the swing voltage on the bus line.

Abstract: In an electronic circuit and/or component, such as a television, that requires a tri-state condition when the electronic circuit/component is powered up, a tri-state circuit may be employed. The present tri-state circuit includes a control circuit operably coupled to an enable input of a tri-state buffer. During power-up of the electronic circuit, the control circuitry is operable to prevent data from passing from an input of the tri-state buffer to an output of the tri-state buffer until a predetermined time period wherein the control circuitry is operable to allow data to pass from the input to the output of the tri-state buffer.

Abstract: An integrated circuit voltage regulator compensates for temperature variations by adjusting a gain of an amplifier. In one embodiment, the gain is controlled by a voltage divider circuit comprised of a first resistor having a first temperature coefficient, and a second resistor having a second temperature coefficient which is different from the first coefficient. In one embodiment, the first resistor is a p-channel transistor and the second resistance is fabricated from integrated circuit active area.

Abstract: An input termination circuit with high impedance at power off, which includes a first transistor coupled between a first terminal and a second terminal. The input termination circuit also includes a control circuit that monitors voltages on the first and second terminals and a first voltage source. During power off conditions, the control circuit couples the gate of the first transistor to a voltage that will keep the first transistor off. The first transistor remains off even when the voltage levels at the first and second terminals vary wildly.

Abstract: A transceiver driver for shaping an output signal includes one or more capacitive elements designed to manipulate the current applied to the control node of the driver's output transistor. The capacitive elements may be one or more capacitors coupled to an inverter branch that provides turn-on and turn-off potential to the gate of the output transistor. The capacitive elements act to charge or discharge the transistor's gate gradual in a highly programmable way so as to make the driver substantially independent of fabrication, supply voltage, and operating temperature vagaries.

Abstract: A semiconductor device including a plurality of logic circuits (G1 to G4) and an insulated gate field effect transistor (IGFET) (N2). The IGFET (N2) may have a current path connected between each of the logic circuits (G1 to G4) and a first reference supply node (VSS). Each logic circuit (G1 to G4) may have a logic output node (Q) that may be at a potential different than the first reference supply when IGFET (N2) is turned off. The IGFET (N2) may have a counter measure to reduce leakage caused by short channel effects when the IGFET is turned off. In this way, leakage current may be reduced.

Abstract: An integrated circuit having a CMOS circuit constituted by electrically connecting an n-type well 2, in which p-channel transistor Tp of the CMOS circuit is set, with a supply line Vdd through switching transistor Tps, and electrically connecting a p-type well 3, in which n-channel transistor Tn of the CMOS circuit is set, with supply line Vss through switching transistor Tns. Thermal runaway due to leakage current can be controlled by turning off switching transistors Tps and Tns and supplying potentials suitable for a test to the n-type well 2 and the p-type well 3 from an external unit when the integrated circuit is being tested. Fluctuations of the latch-up phenomenon and operation speed can be prevented by turning on switching transistors Tps and Tns and setting the n-type well 2 and the p-type well 3 to the voltages Vdd and Vss, respectively.

Abstract: A semiconductor integrated circuit of the present invention includes MOSFETs of at least one of N channel- and P channel-types where at least two MOSFETs included in a plurality of MOSFETs, which are provided in a channel between a high potential power line and a low potential power line, includes two serially-connected MOSFETs of the same channel-type in which their respective gates are connected to each other.

Abstract: Power dissipation of a semiconductor integrated circuit chip is reduced when it is operated at an operating voltage of 2.5 V or below. A switching element is provided in each circuit block within the chip. Constants of the switching element are set so that leakage current in each switching element in their off-state is smaller than the subthreshold current of MOS transistors within the corresponding circuit block. Active current is supplied to active circuit blocks, while switching elements of non-active circuit blocks are turned off. Thus, dissipation currents of non-active circuit blocks are limited to leakage current value of corresponding switching elements. Thus, the sum of dissipation currents of non-active circuit blocks is made smaller than the active current in the active circuit blocks. As a result, power dissipation in the semiconductor integrated circuit chip can be reduced even in the active state.

Abstract: A time delay circuit including a first transistor having a gate, a drain, a source, and a channel between the source and the drain. The input voltage is applied between the gate and drain and the output is taken between the source and drain. The output voltage follows the gate voltage, and the first transistor gate voltage is substantially constant. The time delay circuit also includes a delay element. The output voltage of the first transistor biases the delay element.

Abstract: In a computer system in which a peripheral device is connected to a host computer through two busses each of which has a power supply, a power switching network turns first and second solid state switching devices (FET's) on and off to supply power to the drive. The body diodes of the FET's isolate one power supply from the other and supply power to a controller which turns the FET's on and off. A time constant circuit turns an FET on gradually and a resistor connected between the gate and source of each FET provide enough voltage to turn the FET off if the bus carries a sleep mode signal.

Abstract: A compensated driver for maintaining constant impedance during data transfer from an integrated circuit comprises an output portion having an output device to transfer data from the integrated circuit and a mimic circuit portion having a sample output device scaled to a fraction of the output device adapted to accept a reference current and generate a sample voltage. A mimic circuit portion has a sample output device scaled to a fraction of the output device adapted to accept a reference current and generate a sample voltage. A differential amplifier portion is adapted to generate a control voltage in response to a reference voltage and the sample voltage. A predrive portion applies either a ground or the predetermined control voltage from the differential amplifier portion to the output stage portion in response to an input, the control voltage regulating the output device in the output stage portion to achieve a more constant impedance.

Abstract: An adaptive impedance matching arrangement has an adaptive impedance circuit and a control circuit. The adaptive impedance circuit matches the impedance of a bus and is controlled according to control bits supplied by the control circuit. The control bits are updated according to a signal indicating the state of a queue maintaining transactions for the bus.

Abstract: A transceiver driver for shaping an output signal includes one or more capacitive elements designed to manipulate the current applied to the control node of the driver's output transistor. The capacitive elements may be one or more capacitors coupled to an inverter branch that provides turn-on and turn-off potential to the gate of the output transistor. The capacitive elements act to charge or discharge the transistor's gate gradual in a highly programmable way so as to make the driver substantially independent of fabrication, supply voltage, and operating temperature vagaries.

Abstract: A pad calibration circuit with on-chip resistor. An integrated circuit with an impedance terminated output terminal is disclosed. A source is provided for sourcing current to the output terminal of the integrated circuit, which output terminal interfaces with a load having a finite impedance associated therewith. An on-chip source impedance is disposed internal to the integrated circuit and between the source and the output terminal to define the input impedance of the output terminal.

Abstract: A multiple voltage supply switch is disclosed. The multiple voltage supply switch includes a plurality of switching device pairs. Each switching device pair is connectable between an associated one of a plurality of voltage supplies and an output of the switch. Each switching device pair includes a first switching device connected to the associated one of the plurality of voltage supplies and a second switching device connected in series between the first switching device and the output of the switch. Both the first and second switching devices are activated to connect the associated one of the voltage supplies to the output of the switch and at least one of the first or the second switching devices of each of the other switching device pairs are inactivated to disconnect the voltage supply associated with the other switching device pairs from the output of the switch.

Abstract: An active termination circuit for clamping a signal on a transmission line in an electronic device is described. The active termination circuit is configured to clamp the signal on the transmission line to one of a first reference voltage level and a second reference voltage level. In one embodiment, the active termination circuit includes a bottom clamping transistor coupled to a first potential having a bottom clamping transistor control node arranged for clamping the signal at about a first reference voltage. The active termination circuit also includes a top clamping transistor coupled to a second potential having a top clamping transistor control node arranged for clamping the signal at about a second reference voltage as well as an inverter unit coupling the transmission line to stabilizing capacitors for stabilizing control node voltages.

Abstract: An impedance adjustment circuit achieves impedance matching between a terminal resistor in a reception-side semiconductor device and a transmission line. A reference resistor has a first resistance proportional to characteristic impedance of the transmission line. This reference resistor is external to the reception-side semiconductor device. Furthermore, the terminal resistor includes a resistor having a second resistance and an ON resistance of an MOS transistor. The resistance of the terminal resistor is adjusted by referring to the reference resistor.

Abstract: An impedance controller comprises impedance control logic outputting an adjustable impedance and a comparator comparing the adjustable impedance with a reference voltage. The impedance control logic recalibrates said adjustable impedance only when said comparator indicates a change in impedance.

Abstract: An input buffer having a stable trip point over at least process skew and supply voltage variations includes a first inverter stage; a second inverter stage; and an arrangement for compensating for process skew and supply voltage variations. The compensating arrangement is disposed both in the pull-up and pull-down paths, and increases the conductivity of the pull-up path and decreases the conductivity of the pull-down path when the DC trip point of the input buffer falls below nominal. The compensating arrangement also decreases the conductivity of the pull-up path and increases the conductivity of the pull-down path when the DC trip point rises above nominal. The compensating arrangement may include at least one device disposed in each of the pull-up and pull-down paths. The conductivity of these devices may then be controlled by a reference signal that swings about the DC trip point responsive to at least process skew corners and variations in supply voltage.

Abstract: An integrated circuit voltage regulator compensates for temperature variations by adjusting a gain of an amplifier. In one embodiment, the gain is controlled by a voltage divider circuit comprised of a first resistor having a first temperature coefficient, and a second resistor having a second temperature coefficient which is different from the first coefficient. In one embodiment, the first resistor is a p-channel transistor and the second resistance is fabricated from integrated circuit active area.

Abstract: A logic circuit has two internal voltage lines and includes additional upper and lower MOS transistors for coupling the external voltage supplies to the internal voltage nodes instead of using a single diode or transistor. These additional devices serve to clamp the internal voltages to a level that minimizes leakage current and maintains the data in the logic circuits.

Abstract: A low-voltage differential dual receiver for a SCSI bus uses a symmetrical driver by doing without a termination bias voltage. The data phase and protocol phase of SCSI communication are separated by using two receivers and optimizing each receiver for its particular function. A high-speed receiver is used when transmitting data at high-speeds, and a lower performance, low-speed receiver is used for other SCSI phases. A built-in offset allows the low-speed receiver to operate correctly during bus arbitration. The built-in offset in the low-speed receiver takes the place of the termination bias voltage in a traditional SCSI bus and is implemented in a variety of ways.

Abstract: In a semiconductor integrated circuit device, for realizing high speed, as well as superior product yield rate and usability, while reducing circuit scale and improving on product yield rate and reliability thereof, a main circuit, constructed with CMOS elements, is coupled to a speed monitor circuit for forming a speed signal corresponding to an operating speed thereof and to a substrate bias controller for supplying corresponding substrate bias voltages to the main circuit in response to the speed monitor circuit.

Abstract: Power dissipation of a semiconductor integrated circuit chip is reduced when it is operated at an operating voltage of 2.5 V or below. A switching element is provided in each circuit block within the chip. Constants of the switching element are set so that leakage current in each switching element in their off-state is smaller than the subthreshold current of MOS transistors within the corresponding circuit block. Active current is supplied to active circuit blocks, while switching elements of non-active circuit blocks are turned off. Thus, dissipation currents of non-active circuit blocks are limited to leakage current value of corresponding switching elements. Thus, the sum of dissipation currents of non-active circuit blocks is made smaller than the active current in the active circuit blocks. As a result, power dissipation in the semiconductor integrated circuit chip can be reduced even in the active state.

Abstract: A low-voltage transmitter and receiver adapted for differential signaling via transmission lines between integrated circuits enables operation at very-high data exchange rates. Such data transmission is achieved in a manner that minimizes reflected energy and minimizes crosstalk between signals propagating over neighboring transmission lines. In achieving optimal transmission characteristics, a bridge circuit is employed to drive the signal. The bridge circuit is connected in series between a pull-up and pull-down resistance, their respective resistance values being programmable to maintain optimal communication rates and quality. The pull-up and pull-down resistors preferably comprise a bank of transistors having source-to-drain resistance values that are binary multiples of each other. The transistors are preferably coupled in parallel with each other and in parallel with a resistor, such that the transistors can be selectively activated by a binary voltage control data word.

Abstract: An apparatus comprising a pullup circuit, a pulldown circuit, and a control circuit. The pullup circuit may be configured to receive a first and second control signal. The pulldown circuit may be configured to receive a third and fourth control signal. The control circuit may be configured to generate the first, second, third and fourth control signals. The control circuit may comprise (i) a first and second control device coupled between the first and second control signals and a supply and (ii) a third and fourth control device coupled between the third and fourth control signals and the supply.

Abstract: The logic gate has at least one input terminal in which a digital input signal is applied having two possible logical signal values and at least one output terminal to output an output signal having a logical signal values. Two different logical voltage levels are allocated to both possible logical signal values of the output signal and a logic circuit is provided between the input and the output terminals. The logic circuit has several switching elements, especially switching transistors, working or produced according to the logical voltage level. The logic circuit is supplied with a supply potential that exceeds the logic voltage level. The logic circuit has at least two switching elements, especially switching transistors, in the output path allocated to the output terminal.

Abstract: Power dissipation of a semiconductor integrated circuit chip is reduced when it is operated at an operating voltage of 2.5 V or below. A switching element is provided in each circuit block within the chip. Constants of the switching element are set so that leakage current in each switching element in their off-state is smaller than the subthreshold current of MOS transistors within the corresponding circuit block. Active current is supplied to active circuit blocks, while switching elements of non-active circuit blocks are turned off. Thus, dissipation currents of non-active circuit blocks are limited to leakage current value of corresponding switching elements. Thus, the sum of dissipation currents of non-active circuit blocks is made smaller than the active current in the active circuit blocks. As a result, power dissipation in the semiconductor integrated circuit chip can be reduced even in the active state.

Abstract: Power dissipation of a semiconductor integrated circuit chip is reduced when it is operated at an operating voltage of 2.5 V or below. A switching element is provided in each circuit block within the chip. Constants of the switching element are set so that leakage current in each switching element in their off-state is smaller than the subthreshold current of MOS transistors within the corresponding circuit block. Active current is supplied to active circuit blocks, while switching elements of non-active circuit blocks are turned off. Thus, dissipation currents of non-active circuit blocks are limited to leakage current value of corresponding switching elements. Thus, the sum of dissipation currents of non-active circuit blocks is made smaller than the active current in the active circuit blocks. As a result, power dissipation in the semiconductor integrated circuit chip can be reduced even in the active state.

Abstract: A semiconductor device includes a PMOS transistor and an NMOS transistor. In a standby state, a potential of Vcc level is applied to the substrate of the PMOS transistor and a potential of Vss level is applied to the substrate of the NMOS transistor. Therefore, the voltage between the source and substrate of the P and NMOS transistors becomes 0 V. In an active state, potentials that render the voltage between the source and substrate lower than the built-in potential are applied to respective substrates of the P and NMOS transistors. Therefore, the threshold voltage of the transistor is lowered in an active state than in a standby state, and almost no leakage current flows between the source and substrate.

Abstract: A method and apparatus are provided for tri-state dynamic body charge modulation for sensing devices in silicon-on-insulator (SOI) complementary metal oxide semiconductor (CMOS) applications. A sense amplifier includes a silicon-on-insulator (SOI) field effect transistor. A tri-state body charge modulation circuit is coupled to a body of the silicon-on-insulator (SOI) field effect transistor. The body charge modulation circuit provides a high body bias preparatory state; a floating body state and a low body bias stand-by state enabling high performance operation, good matching characteristics, and low stand-by leakage suitable for low-power applications. The tri-state body charge modulation circuit includes a P-channel field effect transistor (PFET) and an N-channel field effect transistor (NFET) connected between a high voltage potential and ground.

Abstract: An integrated circuit has a first control unit for controlling the threshold potential of the transistors of a first conductivity type. In addition, it has a second control unit for controlling the threshold potentials of the transistors of a second conductivity type. The required value input of the second control unit is supplied with a required value for the threshold potential of the transistors of the second conductivity type, which is proportional to the actual value of the threshold potential of the transistors of the first conductivity type. Due to the dependence of the second control unit on the control by the first control unit, improved switching characteristics of the integrated circuit are achieved.

Abstract: A control circuit, a chipset and a method capable of saving the terminal resistors on a motherboard. Through the determination of connection of a pull-up enable line to a first voltage source Vdd via a resistor, an equivalent resistance is set between the source terminal and the drain terminal of a field effect transistor. The equivalent resistance is almost identical to the terminal resistor and hence can replace the resistor on the motherboard. When the pull-up enable line is connected to the first voltage source Vdd via a resistor, an equivalent resistance of about 45-60 &OHgr; is established between the source and drain terminal of the field effect transistor. The equivalent resistance is connected in parallel with an input/output pad and a second voltage source Vtt to replace the original externally connected terminal resistor rt2 at the other end of the bus.