Abstract: A CMOS analog switch is provided that can handle negative input polarity. The semiconductor substrate wherein the analog switch is formed has a substrate area of n-conductivity type. First and second p-channel transistors are formed in the n-conductivity substrate area and each have a gate, a source connected to the input terminal and a drain connected to the output terminal. The analog switch further has a comparator for comparing a voltage level at the input terminal with ground level, a switch driven by an output of the comparator to selectively connect the n-conductivity area with the signal input terminal for a positive input voltage level or to ground for a negative input voltage level, and control circuitry providing gate control signals for the first and second p-channel transistors. The inherent substrate diodes are effectively kept from becoming conductive.

Abstract: The pass-gate circuit with backgate pull-up includes: a pass-gate transistor coupled between a first port and a second port; a backgate pull-up transistor coupled between a back gate of the pass-gate transistor and a gate of the pass-gate transistor; a first MOS transistor coupled between a first port and the gate of the pass-gate transistor; and a second MOS transistor coupled between a second port and the gate of the pass-gate transistor.

Abstract: A dynamic priority multiplexer including a complementary pair of evaluation devices responsive to a clock signal defining evaluation periods, and multiple evaluation legs coupled in cascade between a top node and a bottom node and arranged in order of priority. The complementary pair includes a pull-up device that pre-charges the top node and a pull-down device that pulls the bottom node low during evaluation. Each higher priority evaluation leg receives a corresponding select signal and a corresponding data signal and includes a corresponding pass device. A select signal, when asserted, enables evaluation of a corresponding data signal and disables a corresponding pass device. The lowest priority evaluation leg includes a pull-down data device that receives a lowest priority data signal and which is coupled between a pass device of a higher priority evaluation leg and the bottom node.

Abstract: A switching circuit is disclosed for switching high voltages and high currents, if necessary, without causing snapback or breakdown. The disclosed high voltage, high current switching circuit comprises a first set of series-connected transistors that includes a plurality of transistors to switch a high voltage without inducing snapback or breakdown; and a second set of series-connected transistors that includes one or more transistors to switch a high current. The first and second sets of series-connected transistors are connected in parallel. The gates of the second set of series-connected transistors are enabled to cause conduction through the second set of series-connected transistors. In addition, a voltage detector is connected to an output of the first and second sets of series-connected transistors. The output of the voltage detector is coupled to the enabling means.

Abstract: Provided is a pass gate circuit capable of operating stably in a transition phase of an input signal, a self-refresh circuit including the pass gate circuit, and a method of controlling the pass gate circuit. The pass gate circuit according to the present invention includes a pass gate unit and a pass gate control unit. The pass gate unit delays an input signal for a fixed duration and outputs the delayed input signal as an output signal in response to a switching control signal. The pass gate control unit outputs the switching control signal, and in response to an internal control signal, determines the existence of a transition in the input signal, and enables or disables the switching control signal according to the determination. The pass gate circuit, the self-refresh circuit including the same, and the control method of the pass gate circuit are capable of operating stably in the transition phase of the input signal.

Abstract: A gradation selector circuit provided with a resistor string circuit in which resistive elements are connected in series between a high potential power source and a low potential power source and a selector circuit which is connected to the resistor string circuit, which selects one of plural analog voltages generated in the resistor string circuit according to a control signal and which outputs it to an output terminal is used. The selector circuit includes analog switching circuits that select analog voltage close to intermediate potential. The analog switching circuit includes a P-type MOS transistor to the source electrode and the back gate electrode of which the resistor string circuit is connected and a depletion type N-type MOS transistor to the source electrode of which the drain electrode of the P-type MOS transistor is connected and to the drain electrode of which an output terminal is connected.

Abstract: An analog switching circuit selects one of a first pair of differential outputs of a first circuit having a first common mode voltage and a second pair of differential outputs of a second circuit having a second common mode voltage. The analog switching circuit includes first and second switches having one of a source and drain that communicate with the first pair of differential outputs. Third and fourth switches have one of a source and drain that communicate with the second pair of differential outputs. An operational amplifier has a first input that communicates with the other of the source and drain of the first and third switches and a second input that communicates with the other of the source and drain of the second and fourth switches. A common mode feedback circuit communicates with the first and second inputs of the operational amplifier and maintains a common mode voltage input of the amplifier below the first and second common mode voltages.

Abstract: A ferroelectric gate device which comprises a ferroelectric capacitor (1), a switching element (2) serving as a resistor or a capacitor depending on the voltage applied, and a field-effect transistor (6) having a source, a drain and a gate, said ferroelectric capacitor (1) having an input terminal (IN) at one end, the other end of said ferroelectric capacitor (1) being connected to one end of said switching element (2), the other end of said switching element (2) being connected to the gate of said field-effect transistor (6), by applying a voltage to said input terminal, said switching element (2) serving as a resistor when a voltage higher than the coercive voltage (Vc) of a ferroelectric substance which said ferroelectric capacitor (1) comprises is applied to said ferroelectric capacitor (1), and by applying a voltage to said input terminal, said switching element (2) serving as a capacitor when a voltage lower than the coercive voltage (Vc) of said ferroelectric substance is applied to said ferroelectric

Abstract: A power switch, and a method, for use with a power switch having a field-effect transistor (FET) including source, drain and gate terminals. The power switch includes a first field-effect transistor (FET) having a first drain coupled to the drain terminal, a first source coupled to the source terminal, and a first gate; and, a second FET having a second drain coupled to the drain terminal, a second source coupled to the source terminal, and a second gate. The second FET has a gate length (LG) that is greater than or less than an LG of the first FET and has a length of a drain (LD) that is greater than or less than an LD of the first FET. The power switch further includes a control circuit coupled to the gate terminal, the first gate, and the second gate.

Abstract: A switch circuit selectively provides a reference voltage, needed in some I/O standards, to a logic device. The circuit receives a dedicated power supply that is different from the device's I/O supply. It may also include a level shifting circuit for converting a master control signal having a logic level determined by a first supply to a first control signal having a logic level determined by the dedicated supply. The switch circuit also includes a transmission switch that passes the reference voltage to an output in response to at least the first control signal. The transmission switch may be a CMOS transmission gate with at least one NMOS transistor controlled by the first control signal in parallel with at least one PMOS transistor controlled by a second control signal, complementary to the first. The second control signal may be generated by another level shifting circuit and have a logic level determined by the I/O supply.

Abstract: Disclosed is a method of the present invention relates to a high voltage transfer circuit. The high voltage transfer circuit includes a first high voltage switch for transferring a high voltage generated within a chip to the outside of the chip according to a clock signal and a first control signal, and a second high voltage switch for transferring the high voltage generated outside the chip to the inside of the chip according to the clock signal and a second control signal. Therefore, it is possible to easily analyze fail of an initial product without manufacturing additional PMOS transistor that withstands a high voltage.

Abstract: The present invention comprises methods and circuits for mirroring input current in multiple stages to improve the accuracy of the mirrored output current over a wide dynamic range of input current. The current mirror circuit of the present invention automatically (1) detects an increasing magnitude of input current and (2) adapts the current mirror circuit to accommodate the increasing magnitude.

Abstract: A switching device receives two pairs of balanced signals and outputs one of the two pairs of the signals. The device is composed of two SPDT switches which share two control signals provided to the gates of the FET of the SPDT switches. The package of the device has eight external electrodes on the back side of the package. The eight external electrodes are configured so that they are aligned symmetrically with respect to the center line of the package. The device requires only a small package space and is suitable for mobile communication application such as cell phone accommodating CDMA and GPS signals.

Abstract: The present invention provides an energy recovering driver that includes a pull-up control, a pull-down control and a transmission gate. The pull up control is responsive to a pull-up control signal and a clock signal to turn the transmission gate ON and OFF and predetermined positions of the clock signal. The pull-down control is responsive to a pull-down control signal and the clock signal to turn the transmission gate ON and OFF at other predetermined locations of the clock signal. The transmission gate transmits the clock signal when at an ON condition and does not transmit the clock signal when in an OFF condition.

Abstract: Methods and systems for limiting power supply and ground bounce enables control of the output current drive dependent on the changes in supply (VDD and GND) levels. This is made possible by making the gate drive of the output driver PMOS and NMOS dependent on the VDD and GND swings. When the VDD or GND increases above normal operating levels, the gate drive of the output driver PMOS is reduced and when the GND or VDD reduces below normal operating levels, the gate drive of the output driver NMOS is reduced. This leads to reduced current flow between the supplies and the pad thereby reducing the VDD and GND bounce problem.

Abstract: An analog switch circuit with superior breakdown voltage characteristics that can operate at a high speed at a low power supply voltage. The analog switch circuit includes a comparator circuit for inputting and comparing an analog input signal input to an analog switch section and a reference signal. If the input potential of the analog input signal is lower than the reference potential of the reference signal, a voltage boost circuit sets a potential of a gate of an n MOS transistor included in the analog switch section to a potential of positive power supply voltage. If the input potential of the analog input signal is higher than the reference potential of the reference signal, the voltage boost circuit boosts the potential of the gate to a potential higher than the potential of power supply voltage.

Abstract: An analog switch circuit includes: an analog switch composed of a first P-channel MOS transistor and a first N-channel transistor, a gate of which receives a control signal; a comparison circuit comparing potentials of a first input-output-terminal and a second input-output terminal, and conveying a higher potential to a well where the first P-channel MOS transistor is formed; a first potential conveying circuit conveying a potential of the well where the first P-channel MOS transistor is formed to a gate of the first P-channel MOS transistor when the analog switch is in the OFF state; a second potential conveying circuit operating on the basis of a control signal to convey the potential of the well where the first P-channel MOS transistor is formed to the gate of the first P-channel MOS transistor to turn off the first P-channel MOS transistor; and a third potential conveying section operating on the basis of the control signal to turn on the first P-channel MOS transistor.

Abstract: A circuit is arranged to enable bi-directional trimming of a reference voltage. A trim current is generated by mirroring a bias current using one or more selectable current source circuits. The selectable current source circuits may each contain transistors that are sized differently from corresponding transistors of the other selectable current source circuits. The sizing may be arranged in a binary chain such that a range of currents may be generated for the trim current while allowing for selection of the level of adjustment for the reference voltage. The current selected for the trim current depends on which of the selectable current sources is enabled. The node corresponding to the trim current is selectively coupled to a load to either increase the voltage across the load or decrease the voltage across the load, providing bi-directional trimming of the reference voltage measured across the load.

Abstract: In a current switching circuit, a complementary circuit switches, in response to an input signal, a pair of current mirror circuits between a first state, enabling the first of the current mirror circuits, through a first current mirror current and disabling the second of the current mirror circuits, and a second state, disabling the first of the current mirror circuits and enabling the second of the current mirror circuits, through a second current, mirror current such that at least one of the first and second current mirror currents flows through a level shift circuit as a level shift current.

Abstract: An apparatus and a method for compensating the drain current degradation in pMOS transistors are disclosed. The pMOS transistor receiving drain current compensation is a primary pMOS transistor. The apparatus comprises of a plurality of pMOS transistors subject to drain current degradation correlating to drain current degradation of the primary pMOS transistor, at least one compensation pMOS transistor coupled in parallel with the primary pMOS transistor, and an output voltage decoder to activate one or more of the compensation pMOS transistors to compensate for the drain current degradation of the primary pMOS transistor based on monitored drain current degradation of the plurality of pMOS transistors.

Abstract: A circuit configuration for controlling a load with reduced noise emission is proposed. The circuit contains a switching device that is connected in series with the load between two supply potential terminals. A control device controls the switching device. The switching device contains a first and at least one second semiconductor switch, whose load paths are connected in parallel fashion with the first semiconductor switch. The threshold voltage of the first semiconductor switch is higher than that of the second semiconductor switch.

Abstract: A voltage generator circuit generates a voltage supplied to an internal circuit. The voltage generator circuit includes first, second, and third switching elements each having first and second terminals. The first terminal of each of the switching elements is connected to the power source terminal supplied with a power source voltage. First, second, and third transistors each have a current path which has first and second ends. The first ends of the first, second, and third transistors are respectively connected to the second terminals of the first, second, and third switching elements. The first, second, and third transistors have respectively first, second, and third driving capabilities. The first, second, and third driving capabilities are different from each other. The second ends of the current paths of the first, second, and third transistors are connected to an output terminal which outputs the voltage supplied to the internal circuit.

Abstract: A protection circuit for a transmission gate having a PMOS transmission gate transistor and an NMOS transmission gate transistor coupled between a core circuit and an I/O pad. Biasing transistors are coupled to gates of the NMOS and PMOS transmission gate transistors to turn them on during normal operation. A protection circuit will turn off the NMOS and PMOS transmission gate transistors when the voltage at the pad exceeds the supply voltage by more than a threshold amount. This protection circuit includes a first protection transistor coupled between the gates of the biasing transistors and the pad to turn the biasing transistors off when the voltage on the pad exceeds the supply voltage by more than the threshold amount.

Abstract: A transistor causes fluctuation in the threshold and mobility due to the factor such as fluctuation of the gate length, the gate width, and the gate insulating film thickness generated by the difference of the manufacturing steps and the substrate to be used. As a result, there is caused fluctuation in the current value supplied to the pixel due to the influence of the characteristic fluctuation of the transistor, resulting in generating streaks in the display image. A light emitting device is provided which reduces influence of characteristics of transistors in a current source circuit constituting a signal line driving circuit until the transistor characteristics do not affect the device and which can display a clear image with no irregularities. A signal line driving circuit of the present invention can prevent streaks in a displayed image and uneven luminance.

Abstract: An integrated circuit has first and second logic circuits having common input terminals and the same complementary logic function. The first logic circuit has a p-type FET circuit block and an n-type FET circuit block each with a high threshold value, while the second logic circuit has a p-type FET circuit block and an n-type FET circuit block each with a low threshold value. An output switch circuit intervenes between the p-type FET and n-type FET circuit blocks in each logic circuit and controls the power supply connection to each logic circuit. In operation, the output of the second logic circuit is connected to the output terminal to realize a low power consumption. In the standby state, the output of the first logic circuit is connected to the output terminal to realize a low leakage current.

Abstract: A novel gate driver apparatus in which an energy recovery circuitry is incorporated in a square-wave gate driver. The energy recovery circuitry has a first loop circuit for discharging the energy from the gate capacitor to an inductor when the gate driver is turned off, and a second loop circuit for discharging the energy from the inductor to the power supply. Thus, the energy of the gate capacitor is transferred to the power source when the gate driver is turned off, and the gate driver apparatus still maintains its operating flexibility as the square-wave driver and is independent of switching frequency.

Abstract: Techniques for on-chip impedance termination are provided that substantially reduce the number of external resistors that are need to provide impedance termination at a plurality of pairs of differential input/output (I/O) pins. On-chip impedance termination circuits of the present invention may include an amplifier, a feedback loop, and an impedance termination circuit. A reference voltage is provided to a first input terminal of the amplifier. A feedback loop is coupled between an output terminal of the amplifier and a second input terminal of the amplifier. The amplifier drives its output voltage so that the voltage at the second input terminal matches the voltage at the first input terminal. The output voltage of the amplifier determines the resistance of the impedance termination circuit. The impedance termination circuit is coupled between differential I/O pins.

Abstract: An integrated device includes a redundant bond pad for accessing internal circuitry in the event that the main bond pad for that circuitry is difficult to access with testing equipment. Signals from the redundant bond pad are biased to ground during normal operations of the integrated device. In order to test the relevant internal circuitry, a voltage is applied to a Test Mode Enable bond pad, overcoming the bias that grounds the redundant bond pad. In addition, the signal from the Test Mode Enable bon pad serves to ground any transmission from the main bond pad. As a result, the bond pad may be used to test the relevant internal circuitry given its accessible location in relation to the testing equipment.

Abstract: A bi-directional buffer includes the capability to turn the current mirror off when the bi-directional buffer is in the receive mode and quickly turn the current mirror on when the bi-directional buffer goes into the transmit mode. This is accomplished in part by a pair of switches included in the current mirror, which are controlled by enable signals. The switches are configured such that the output transistor of the current mirror is turned on when the bi-directional buffer is in the transmit mode, and turned off when the bi-directional buffer is in the receive mode. Further, a pull up circuit may be added to the current mirror to more quickly bring the gate of the output transistor of the current mirror to its conduction threshold voltage.

Abstract: An analog switch circuit includes: an analog switch composed of a first P-channel MOS transistor and a first N-channel transistor, a gate of which receives a control signal; a comparison circuit comparing potentials of a first input-output-terminal and a second input-output terminal, and conveying a higher potential to a well where the first P-channel MOS transistor is formed; a first potential conveying circuit conveying a potential of the well where the first P-channel MOS transistor is formed to a gate of the first P-channel MOS transistor when the analog switch is in the OFF state; a second potential conveying circuit operating on the basis of a control signal to convey the potential of the well where the first P-channel MOS transistor is formed to the gate of the first P-channel MOS transistor to turn off the first P-channel MOS transistor; and a third potential conveying section operating on the basis of the control signal to turn on the first P-channel MOS transistor.

Abstract: A balanced switching circuit comprises a plurality of transfer gates, each transfer gate having an input terminal, an output terminal, and at least one control terminal adapted to receive a control signal. Each transfer gate, which may be comprised of pass transistors such as n- and p-channel metal oxide semiconductor (MOS) transistors, is operable to couple the input terminal to the output terminal in response to the control signal. The plurality of transfer gates are arranged in N rows and N columns with the input and output terminals of the N transfer gates in each row connected in series between a first signal terminal and a second signal terminal. Each transfer gate has its control terminal connected to one of N clock terminals adapted to receive respective clock signals. Each clock terminal is coupled to the control terminal of only one transfer gate in each row and only one transfer gate in each column.

Abstract: A memory device including a balanced switching circuit and methods for controlling an array of transfer gates. The balanced switching circuit comprises a plurality of transfer gates. The plurality of transfer gates are arranged in N rows and N columns with the N transfer gates in each row connected in series between a first signal terminal and a second signal terminal. Each one of N clock terminals is coupled to a respective control terminal of only one transfer gate in each row and only one transfer gate in each column. The transfer gates are selectively clocked or activated in response to clock signals to couple the first signal terminal to the second signal terminal such that the switching speed is independent of the order in which the individual series connected pass transistors or transfer gates are activated.

Abstract: A simultaneous bidirectional data port circuit includes a current mode output driver for driving an output node and a current mode return driver for driving a differential receiver. The current mode return driver is scalable to reduce current requirements. Each driver is divided into driver segments. Some driver segments are driven by outbound data, and other driver segments are driven by pre-equalization data. Variable pre-equalization is provided by a pre-driver that selects the number of driver segments to be driven with pre-equalization data and the number of driver segments to be driven by outbound data.

Abstract: Disclosed is a low-power data transfer circuit having a high data transfer rate. This data transfer circuit of the invention includes a first selection circuit for selecting two signal lines out of three signal lines and precharging the remaining signal line to a first potential; and a second selection circuit for selecting and connecting the two data signal lines selected by the first selection circuit to a reception side circuit. With the configuration, a period of precharging a signal line is included in a data transfer period. Thus, there is no need to provide a specific precharge period after data transfer, and data can be transferred effectively.

Abstract: A low voltage analog switch having low leakage off-current and including a first transmission gate having a first N-channel transistor and a first P-channel transistor, each first and second transistor having respective drain and source terminals coupled together to form switch drain and source terminals, and a second transmission gate having a second N-channel transistor coupled in series to a second P-channel transistor coupled in series to a third N-channel transistor, the second transmission gate being coupled in parallel to the first transmission gate, the gates of the second and third N-channel transistors being coupled to the gate of the first N-channel transistor and a gate of the second P-channel transistor being coupled to the gate of the first P-channel transistor.

Abstract: A digital electronic circuit having first and second sections. The first section is adapted to transmit one of N input signals. The second section is adapted to receive the signal transmitted by the first section and one or more control signals. The second section is configured to output either an inverse of the signal transmitted by the first section or a logical 0, or to output either an inverse of the signal transmitted by the first section or a logical 1. The second section also may be selectively configurable.

Abstract: The present invention relates to a duty cycle adaptive data output buffer of a semiconductor device in which the current driving power of the output buffer is adaptively varied with a duty cycle, to effectively improve noise margin at slow duty cycle. The duty cycle adaptive data output buffer disclosed includes first and second pull-up transistors connected between a power supply voltage and an output terminal; first and second pull-down transistors connected to the output terminal and a ground; duty cycle detector for receiving a duty clock signal, to generate a first control signal at faster duty cycle, and to generate a second control signal at slower duty cycle; a first output driver for driving the first pull-up and pull-down transistors using first and second data signals in response to the first control signal; and a second output driver for driving the second pull-up and pull-down transistors using the first and second data signals in response to the second control signal.

Abstract: Two terminals of each of transistors (P1, N1) are connected between two terminals (A, B). A body effect compensation circuit (COMP-P1) for the transistor (P1) and a body effect compensation circuit (COMP-N1) for the transistor (N1) are arranged. The back gates of transistors (P1P, P2P) in the circuit (COMP-P1) and transistors (P1N, P2N) in the circuit (COMP-N1) are commonly connected to the back gate of the transistor (P1). The back gates of transistors (N1N, N2N) in the circuit (COMP-N1) and transistors (N1P, N2P) in the circuit (COMP-P1) are commonly connected to the back gate of the transistor(N1). With this structure, in transferring a signal from one terminal (A or B) to the other terminal (B or A) or vice verse, the signal potential is transferred to the back gates of the transistors (P1, N1) at a high speed to increase the signal transfer speed.

Abstract: A current output circuit with two output nodes connectable to a load and providing a plurality of discretely selectable current output magnitudes is provided. The circuit consists of a current driver attached across the output nodes supplying a particular current and one or more bypass resistors connected in parallel with the output nodes that can be switched between a non-conducting state and a resistive conducting state. When a load is connected across said output nodes, the particular magnitude of current sourced through the load can be selected by switching the state of the bypass resistors. The magnitude of the bypass resistors is preselected to provide several discretely selectable states of output current of substantial equal steps. The current driver can be combined with a current switch to increase the number of output states. Several current drivers with current switches may be provided and the bypass resistors integrated into the current switch itself.

Abstract: A multiplexor circuit for performing time-division-multiplexing comprises two or more input signal pairs comprising individual signal lines for providing timed data input into the multiplexor circuit, the pairs alternately selectable for operation, two or more select lines for selecting alternate ones of the input signal pairs during operation, one or more output lines comprising signal output of the circuit and two or more resistive output loads and associated electronic gates. When a specific input pair is not selected for output, the not-selected input pair is not directly connected to the output lines of the circuit but is instead connected to individual ones of the resistive output loads enabled by the associated gates.

Abstract: A logic circuit comprises a dual rail drive circuit having a first rail and a second rail. The logic circuit further comprises a logic block having a first input coupled to receive an input signal from the first rail of the dual rail driver, and a second input coupled to receive an input signal from the second rail of the dual rail driver. In one embodiment, the input signal from the first rail of the dual rail driver can swing to a voltage level sufficient to turn on a p-channel transistor, and the input signal from the second rail of the dual rail driver can swing to a voltage level sufficient to turn on an n-channel transistor. For example, for a 0.18 micron process the input signal from the first rail may have a voltage swing from VDD to VDD-400 MV, and the input signal from the second rail may a voltage swing from GROUND to 400 MV.

Abstract: A bus driver circuit includes a plurality of first MOS transistors connected in series between a data input terminal and a data output terminal, and a plurality of second controlling MOS transistors. Sources of said plurality of first MOS transistors are connected to drains of said plurality of second controlling MOS transistors. Also, gates of said plurality of second controlling MOS transistors to control signal source means for selectively turning ON and OFF said plurality of second controlling MOS transistors. The bus driver circuit thus constructed permits selection of optimal rise-up and fall-down transition period for achieving high speed and efficient data transmission.

Abstract: An electronic device for controlling oscillation of an output voltage about a final value includes a semiconductor substrate, and at least one output stage on the semiconductor substrate. The at least one output stage includes at least one output transistor for providing an output voltage to an external load connected thereto. The output transistor includes a plurality of transistor legs connected in parallel and having different channel lengths. Each transistor leg is individually turned on and at different times for controlling oscillation of the output voltage about the final value.

Abstract: A synchronizing stage for synchronizing asynchronous signals provides for a signal stage to be connected in parallel with a clocked input stage and a holding stage that is clocked in anti-phase. The signal stage is clocked in anti-phase with the input stage. An output stage is connected downstream of the parallel circuit. The synchronizing stage reduces the probability of a metastable state in the event of overlapping and non-overlapping clock signals and ensures the reliable transfer of an input datum to the output of the synchronizing stage.

Abstract: Two terminals of each of transistors (P1, N1) are connected between two terminals (A, B). A body effect compensation circuit (COMP-P1) for the transistor (P1) and a body effect compensation circuit (COMP-N1) for the transistor (N1) are arranged. The back gates of transistors (P1P, P2P) in the circuit (COMP-P1) and transistors (P1N, P2N) in the circuit (COMP-N1) are commonly connected to the back gate of the transistor (P1). The back gates of transistors (N1N, N2N) in the circuit (COMP-N1) and transistors (N1P, N2P) in the circuit (COMP-P1) are commonly connected to the back gate of the transistor (N1). With this structure, in transferring a signal from one terminal (A or B) to the other terminal (B or A) or vice verse, the signal potential is transferred to the back gates of the transistors (P1, N1) at a high speed to increase the signal transfer speed.

Abstract: Embodiments of the invention include an integrated circuit output buffer, with a pre-drive stage and an output driver stage, that provides linear performance independent of the load impedance. The output driver stage includes a pull-up resistor arrangement having a plurality of branches connected in parallel and, alternatively at least one pull-down resistor arrangement having a plurality of branches connected in parallel. The branches of the pull-up resistor arrangement include at least one resistor and at least one transistor serially connected between a supply voltage and the output buffer output terminal connectable to the PAD external to the output buffer. The transistor in the pull-up arrangement is connected to both the data terminals from the pre-drive stage and the control bit terminals.

Abstract: A current output circuit with two output nodes connectable to a load and providing a plurality of discretely selectable current output magnitudes is provided. The circuit consists of a current driver attached across the output nodes supplying a particular current and one or more bypass resistors connected in parallel with the output nodes that can be switched between a non-conducting state and a resistive conducting state. When a load is connected across said output nodes, the particular magnitude of current sourced through the load can be selected by switching the state of the bypass resistors. The magnitude of the bypass resistors is preselected to provide several discretely selectable states of output current of substantial equal steps. The current driver can be combined with a current switch to increase the number of output states. Several current drivers with current switches may be provided and the bypass resistors integrated into the current switch itself.

Abstract: An IC comprises a pair of circuit nodes, a current mirror that includes dual-function transistor, and a controller for switching the transistor between a pair of states. In a first state, the transistor provides current gain and also provides a relatively high impedance between the nodes, and in a second state, it provides no current gain and a relatively lower impedance between the nodes.

Abstract: The circuits and methods of the present invention provide rail-to-rail output stages that cancel the non-linear components of the transconductances of transistors used in the output stages, that allow the idling current in the output stages to be controlled by external current sources and device size ratios, and that enable the idling current in the output stages to be maintained independently of manufacturing processes, temperature, and power supply voltages. The output stages generally comprise a complementary subcircuit, a current mirror and an output driver. The output stages receive an input signal and a bias voltage from an external source and responsively produce a push current that feeds current into a load and a pull current that pulls current from the load. When the push current matches the pull current, the output stages are said to be “idling.” The bias voltage controls the idling current.

Abstract: Two terminals of each of transistors (P1, N1) are connected between two terminals (A, B). A body effect compensation circuit (COMP-P1) for the transistor (P1) and a body effect compensation circuit (COMP-N1) for the transistor (N1) are arranged. The back gates of transistors (P1P, P2P) in the circuit (COMP-P1) and transistors (P1N, P2N) in the circuit (COMP-N1) are commonly connected to the back gate of the transistor (P1). The back gates of transistors (N1N, N2N) in the circuit (COMP-N1) and transistors (N1P, N2P) in the circuit (COMP-P1) are commonly connected to the back gate of the transistor (N1). With this structure, in transferring a signal from one terminal (A or B) to the other terminal (B or A) or vice verse, the signal potential is transferred to the back gates of the transistors (P1, N1) at a high speed to increase the signal transfer speed.