Abstract: A semiconductor integrated circuit which reduces and increase in the level of a harmonic signal of an RF transmission output signal at the time of supplying an RF transmission signal to a bias generation circuit of an antenna switch, including an antenna switch having a bias generation circuit, a transmitter switch, and a receiver switch. The on/off state of a transistor of the transmitter switch coupled between a transmitter port and an I/O port is controlled by a transmit control bias. The on/off state of the transistors of the receiver switch coupled between the I/O port and a receiver port is controlled by a receiver control bias. An RF signal input port of the bias generation circuit is coupled to the transmit port, and a negative DC output bias generated from a DC output port is supplied to a gate control port of transistors of the receiver switch.

Abstract: A high frequency switching circuit, including a high frequency switching element. The high frequency switching element including a first channel terminal and a second channel terminal, wherein the high frequency switching element is configured to switchably route a high frequency signal via a channel path between the first channel terminal and the second channel terminal. The high frequency switching circuit further includes a power detection circuit, wherein the power detection circuit is configured to obtain a first measurement signal from the first channel terminal and a second measurement signal from the second channel terminal, and to combine the first measurement signal and the second measurement signal to derive, in dependence on both the first measurement signal and the second measurement signal, a power signal describing a power value of the high frequency signal routed via the channel path of the high frequency switching element.

Abstract: There is provided a communication device including: a first node connected to an antenna; a transmission unit outputting a signal to the antenna via the first node; a reception unit having a signal input thereto from the antenna via the first node; a first switch provided between the first node and the transmission unit; and a second switch provided between the first node and the reception unit, and in which the second switch is alternately turned on and off repeatedly, and the reception unit includes an amplifier amplifying a signal that the transmission unit outputs via the first and second switches and a mixer mixing a signal amplified in the amplifier and a local signal.

Abstract: A radio-frequency switch circuit of the invention includes: n-stage through FETs (field effect transistors) connected in series between the antenna terminal and each of the radio-frequency terminals, where n is a natural number; a radio-frequency leakage prevention resistor connected to a gate of the through FETs; a control signal line commonly connected to the gates of the n-stage through FETs connected to the same radio-frequency terminal; and a resistor connected to each of at least two of the control signal lines and connected to the radio-frequency leakage prevention resistor in series The two control signal lines are capacitively coupled between the resistor and the through FETs.

Abstract: A switch circuit is provided that includes at least one main switching device and at least one shunt switching device. Each main switching device is connected in series with a conductor that carries an RF signal between an input circuit and an output circuit. Each shunt switching device is connected between a controlling terminal of the main switching device and a high frequency ground. The switch circuit can provide substantially improved OFF state isolation over other approaches.

Abstract: According to one embodiment, a semiconductor switch includes a voltage generator, a driver, a switch section, and a power supply controller. The voltage generator is configured to generate a first potential and a negative second potential. The first potential is higher than a power supply voltage supplied to a power supply terminal. The driver is connected to an output of the voltage generator and includes a first level shifter and a second level shifter. The first level shifter is configured to output the first potential in response to input of high level and to output low level in response to input of low level. The second level shifter is configured to output the first potential in response to input of the first potential an output of the first level shifter and to output the second potential in response to input of low level of the output of the first level shifter. The switch section is configured to switch connection between terminals in response to an output of the driver.

Abstract: A high-frequency switch module that significantly reduces deterioration of high-frequency characteristics and improves harmonic wave distortion characteristics includes a high-frequency switch and SAW filters mounted on a multilayer substrate. Low pass filters are provided within the multilayer substrate. The terminals of the high-frequency switch are located on the bottom surface of the semiconductor substrate. The high-frequency switch includes a high-frequency circuit ground terminal and a control circuit ground terminal, the multilayer substrate includes therein a ground electrode which is electrically connected to a top surface connection electrode to which the high-frequency circuit ground terminal is connected, and a wiring electrode electrically connected to a top surface connection electrode to which the control circuit ground terminal is connected is arranged so as to be insulated from the ground electrode.

Abstract: Provided is an SPDT switch having improved isolation characteristics in an RF band. The SPDT switch includes a serial switching unit, a current sink unit, a switching isolation unit, and a DC blocking unit. The serial switching unit includes first and second HBTs. The current sink unit sinks a current flowing from a common input terminal to each of first and second output terminals of the serial switching unit. The switching isolation unit causes an unselected output terminal of the first and second output terminals to be electrically isolated from the common input terminal when the serial switching unit operates. The DC blocking unit blocks a DC between the first HBT and the first output terminal and a DC between the second HBT and the second output terminal. Accordingly, it is possible to provide better insertion-loss and isolation characteristics in higher frequency bands than typical switches.

Abstract: One high-frequency switch Qm supplied with transmit and receive signals to ON, and another high-frequency switch Qn supplied with a signal of another system to OFF are controlled. In the other high-frequency switch Qn, to set V-I characteristics of near-I/O gate resistances Rg1n-Rg3n of a near-I/O FET Qn1 near to a common input/output terminal I/O connected with an antenna are set to be higher in linearity than V-I characteristics of middle-portion gate resistances Rg3n and Rg4n of middle-portion FETs Qn3 and Qn4. Thus, even in case that an uneven RF leak signal is supplied to near-I/O gate resistances Rg1n-Rg3n, and middle-portion gate resistances Rg3n and Rg4n, the distortion of current flowing through the near-I/O gate resistances Rg1n-Rg3n near to the input/output terminal I/O can be reduced.

Abstract: A switched capacitor circuit for use at at least one operating frequency is provided. The switched capacitor may include an inductive element having a first terminal coupled to a switching voltage and a second terminal. The switched capacitor circuit may further include a hetero-junction bipolar transistor (HBT) having a base terminal coupled to the second terminal of the inductive element, a first conducting terminal, and a second conducting terminal coupled to a voltage supply terminal.

Abstract: There is provided a high frequency switching circuit having good characteristics of high-order harmonics that has little variation. A high frequency switching circuit according to an aspect of the invention may include: a high frequency switch having one end connected to an input terminal receiving a high frequency signal and the other end connected to an output terminal of the high frequency signal, the high frequency switch turned on or off by a control signal; and a capacitor having a predetermined capacitance, and having one end connected the output terminal and the other end connected to a ground by a bonding wire.

Abstract: In a transmission/reception selection switch, a first diode is arranged in series with a transmission signal line and a second diode is arranged in shunt with a reception signal line. A first current route where a direct current passes through the first diode is connected in parallel to a second current route where a direct current passes through the second diode. When a predetermined positive voltage is applied to a control terminal, the diodes are turned ON and a direct current flows through, in order, the control terminal, a resistor, an inductor, the diode, a strip line, and an inductor), and a direct current flows through, in order, the control terminal, the resistor, the second diode, and the inductor.

Abstract: A switch element includes a switch device having a drain, a source and a plurality of gates, and at least one additional interconnect located between the plurality of gates, the additional interconnect operative to establish a constant potential between the at least two gates.

Abstract: A radio-frequency switch circuit of the invention includes: n-stage through FETs (field effect transistors) connected in series between the antenna terminal and each of the radio-frequency terminals, where n is a natural number; a radio-frequency leakage prevention resistor connected to a gate of the through FETs; a control signal line commonly connected to the gates of the n-stage through FETs connected to the same radio-frequency terminal; and a resistor connected to each of at least two of the control signal lines and connected to the radio-frequency leakage prevention resistor in series The two control signal lines are capacitively coupled between the resistor and the through FETs.

Abstract: A high frequency switch circuit according to the present invention includes a control-voltage-generating circuit. The control-voltage-generating circuit includes a depletion type field-effect transistor, an external-control-signal-input terminal, an internal-control-voltage-output terminal, and a power-receiving terminal of the control-voltage-generating circuit. The field-effect transistor has a grounded gate, a source connected to the external-control-signal-input terminal, and a drain connected to the power-receiving terminal. The internal-control-voltage-output terminal is connected to an electrical connection path between the drain of the field-effect transistor and the power-receiving terminal.

Abstract: The present invention is directed to reduce increase in the level of a harmonic signal of an RF (transmission) Tx output signal at the time of supplying an RF Tx signal to a bias generation circuit of an antenna switch. A semiconductor integrated circuit includes an antenna switch having a bias generation circuit, a Tx switch, and an antenna switch having a bias generation circuit, a transmitter switch, and a receiver (Rx) switch. The on/off state of a transistor of a Tx switch coupled between a Tx port and an I/O port is controlled by a Tx control bias. The on/off state of the transistors of the Rx switch coupled between the I/O port and a receiver (Rx) port is controlled by an RX control bias. A radio frequency (RF) signal input port of the bias generation circuit is coupled to the Tx port, and a negative DC output bias generated from a DC output port can be supplied to a gate control port of transistors of the Rx switch.

Abstract: The present invention relates to A radio frequency (RF) switch and an apparatus including the RF switch. In an aspect of the present invention, an RF switch includes a transmission line having one end connected to an input terminal or an output terminal and the other end connected to a signal line and configured to transfer an RF signal, and a diode disposed between the input terminal and the transmission line or between the output terminal and the transmission line, the diode being configured to control whether or not to transmit the RF signal. In another aspect, an RF switch includes a transmission line having one end connected to an input terminal and the other end connected to an output terminal, and a diode disposed between the input terminal and the transmission line or between the output terminal and the transmission line, the diode being configured to control whether or not to transmit the RF signal. Here, a CRLH (Composite Right/Left-Handed) transmission line is employed as the transmission line.

Abstract: According to one embodiment, a semiconductor device includes a body and a semiconductor element. The body includes a semiconductor mount, a first conductor and a second conductor provided on a periphery of the semiconductor mount. The semiconductor element is disposed on the semiconductor mount and includes a first through switching element, a first shunt switching element, a second through switching element, and a second shunt switching element. The first through switching element is connected between a common terminal and a first radio frequency terminal. A first radio frequency current is flowing through the first through switching element via the first conductor. The first shunt switching element is connected to the first radio frequency terminal. The second through switching element is connected between the common terminal and a second radio frequency terminal. The second shunt switching element has one terminal connected to the second radio frequency terminal and another terminal.

Abstract: A high-frequency circuit comprising a high-frequency switch circuit for switching the three-way connection of an antenna to a transmitting circuit for the first communications system, a receiving circuit for a first communications system, and a transmitting/receiving circuit for a second communications system; a first bandpass filter disposed between the antenna and the high-frequency switch circuit; and a balanced-unbalanced conversion circuit disposed between the receiving circuit of the first communications system and the high-frequency switch circuit.

Abstract: A monolithic high power radio frequency switch includes a substrate, and first and second gallium nitride high electron mobility transistors on the substrate. Each of the first and second gallium nitride high electron mobility transistors includes a respective source, drain and gate terminal. The source terminal of the first gallium nitride high electron mobility transistor is coupled to the drain terminal of the second gallium nitride high electron mobility transistor, and the source terminal of the second gallium nitride high electron mobility transistor is coupled to ground. An RF input pad is coupled to the drain terminal of the first second gallium nitride high electron mobility transistor, an RF output pad is coupled to the source terminal of the first gallium nitride high electron mobility transistor and the drain terminal of the second gallium nitride high electron mobility transistor, and a control pad is coupled to the gate of the first gallium nitride high electron mobility transistor.

Abstract: At very high frequencies, generally above 100 GHz, the performance of traditional radio frequency (RF) circuitry begins to significantly limit performance. An example is the hybrid coupler, which can have a relatively narrow 90° bandwidth in these frequency ranges. Here, however, a branch-line hybrid coupler (which has been integrated into a quadrature downconversion mixer) has been modified. Namely, an adjustable impedance network has been coupled to isolation port (which has traditionally been terminated) to substantially increase the tuning range and expand the bandwidth of the quadrature mixer within these very high frequency ranges.

Abstract: In a first aspect, an RF switch includes a main transistor and a gate-to-source shorting circuit. When the RF switch is turned off, the gate-to-source shorting circuit is turned on to short the source and gate of the main transistor together, thereby preventing a Vgs from developing that would cause the main transistor to leak. When the RF switch is turned on, the gate-to-source shorting circuit is turned off to decouple the source from the gate. The gate is supplied with a digital logic high voltage to turn on the main transistor. In a second aspect, an RF switch includes a main transistor that has a bulk terminal. When the RF switch is turned off, the bulk is connected to ground through a high resistance. When the RF switch is turned on, the source and bulk are shorted together thereby reducing the threshold voltage of the main transistor.

Abstract: A CMOS monolithic transmit/receive switch comprises a single pole double throw switch (SPDT) module operable to selectively connect an antenna port to either a transmit port or to a receive port. A transmit matching network comprising a first transmission line matches the impedance of the transmit port of the SPDT module to a transmit impedance, and a first shunt transistor is operable to selectively ground a transmitter end of the first transmission line. A receive matching network comprising a second transmission line matches the impedance of the receive port of the SPDT module to a receive impedance, and a second shunt transistor is operable to selectively ground a receiver end of the second transmission line.

Abstract: The present invention provides an RF switch, including a diode adapted to operate as a switch when a control current is applied thereto, a first CRLH transmission line of a ? degree phase, which provides one signal transfer path from a terminal 1 to a terminal 2 when the diode is shorted due to application of a control current, and a second CRLH transmission line of a ?-180 degree phase, which has a 180 degree phase difference from that of the first CRLH transmission line and provides the other signal transfer path from the terminal 1 to the terminal 2. The present invention provides an RF switch having a broad-band characteristic by employing a CRLH transmission line. More specifically, the present invention provides a ring-shaped RF switch, which has a broad-band characteristic and can also be miniaturized at a low frequency band, by employing a CRLH transmission line having a 180 degree phase difference in a broad band.

Abstract: Switch circuits are disclosed, for providing a single-ended and a differentially switched high-voltage output signals by switching a high supply voltage in response to at least one logic-level control signal. The switch that provides the single-ended switched high-voltage output signal includes a chain of at least three serially coupled field effect transistors (FETs). The chain receives the high supply voltage and switches it to output the high-voltage output signal. The switch that provides the differentially switched high-voltage output signal includes two differentially coupled chains, each having at least three serially coupled FETs. The chains receive the high supply voltage and switch it to output the differential high-voltage output signal. A control/bias circuit provides a control voltage to at least one of the FETs in the chains, responsive to the control signal.

Abstract: A system and method are provided for biasing transistor switches in a semiconductor based high power switch. Off-state Vgsd biasing for the off transistor switches is based upon acceptable levels of spurious harmonic emissions and linearity.

Abstract: A semiconductor switch for switching a signal according to input power and maintaining performance of a receiver system with a simple configuration. The semiconductor switch comprises: a first FET connected between a first input/output terminal and a second input/output terminal; a first transmission line connected between the first input/output terminal and a third input/output terminal; a second transmission line parallel to the first transmission line; and a detector circuit connected to one end of the second transmission line, for outputting a DC voltage corresponding to power level of the high frequency signal, branched by the second transmission line. The first FET is controlled and switched according to an output from the detector circuit to switch between a route from the first input/output terminal to the second input/output terminal and a route from the first input/output terminal to the third input/output terminal.

Abstract: An RF switching circuit adapted to cancel selected harmonic signals. An unwanted harmonic signal Sh1 at a selected harmonic frequency Fsh of an operating frequency Fo exists in a signal Si conducted by the switching circuit, possibly produced by the switching circuit due to conduction through a first nonlinear impedance Znl(1). A compensating harmonic signal Sh2 is therefore generated by conduction via a nonlinear impedance Znl(2). Znl(1) may be due to parasitic conduction by “off” switching elements, while Znl(2) may be due to conduction by an “on” FET. The amplitude and/or phasing of Sh2 may be adjusted by selecting components for a network coupling Znl(2) to the conducted signal Si, such that Sh2 substantially cancels Sh1 across a target range of input power.

Abstract: Apparatuses and methods for directional coupling are disclosed. In one embodiment, an apparatus includes a directional coupler, a termination impedance, a switch, and a control block. The directional coupler includes a power input terminal, a power output terminal, a couple terminal and a terminate terminal. The power input terminal can receive a radio frequency signal from a power amplifier, and the power output terminal can be electrically connected to a load. The switch has an ON state and an OFF state, and includes an input electrically connected to the terminate terminal and an output electrically connected to the termination impedance. The switch is configured to provide a relatively low impedance path between the input and the output when in the ON state and to provide a relatively high impedance path between the input and the output when in the OFF state. The control block can set the state of the switch.

Abstract: An electrical component includes a first signal path and a second signal path electrically connected to a common signal path. The electrical component also includes a first filter in the first signal path and a second filter in the second signal path. The electrical component also includes a first matching circuit comprising a shunt arm to ground. The first matching circuit is electrically connected to the first signal path, the second signal path, and the common signal path.

Abstract: The present invention provides a space saving and simply implementable planar integrated switching device comprising at least two CPW-slotline transition units each including an access for inputting and/or outputting a transmission signal, a slotline connecting said at least two CPW-slotline transition units, and a switching element arranged on said slotline between said at least two CPW-slotline transition units for switching the transmission signal over said slotline on and off under control of a switch control signal.

Abstract: Switches with improved biasing and having better isolation and reliability are described. In an exemplary design, a switch is implemented with a set of transistors, a set of resistors, and an additional resistor. The set of transistors is coupled in a stacked configuration, receives an input signal, and provides an output signal. The set of resistors is coupled to the gates of the set of transistors. The additional resistor is coupled to the set of resistors and receives a control signal for the set of transistors. The resistors reduce signal loss through parasitic capacitances of the transistors when they are turned on. The resistors also help split the signal swing of the input signal approximately evenly across the transistors when they are turned off, which may improve reliability of the transistors. The switch may be used in a switchplexer, a power amplifier (PA) module, etc.

Abstract: An analog switch includes a transistor whose source connected to a signal input and whose drain is connected to a signal output. An output of a gate control circuit is connected to the transistor gate. A first input of the gate control circuit is connected to the source of the transistor. The gate control circuit responds to a logic transition of an enable signal received at a second input by pre-charging a substantially constant gate-to-source voltage across the transistor. This voltage is stored by a gate-to-source connected capacitor. In one steady-state logic condition of the enable signal, the gate control circuit operates to turn off the transistor. In another steady-state logic condition of the enable signal, the gate control circuit permits the signal received at the signal input to drive the gate of the transistor with a voltage offset by the substantially constant gate-to-source voltage stored on the capacitor.

Abstract: A switch circuit for passing or blocking a high-frequency signal includes a correction circuit for correcting an impedance component that exists in the switch circuit and that changes asymmetrically with the direct-current potential as a reference such that impedance as seen from either high-frequency terminal changes symmetrically with the direct-current potential as a reference in response to positive and negative changes that take the direct-current potential of the high-frequency signal as a reference.

Abstract: In an improved T/R switch configuration of a radio transceiver, the sizes of active switches coupled in series between the receive port and the common port are tapered such that the voltage referenced to ground across the active devices of the T/R switch is more evenly distributed among the switches which increases the power handling capability of that path. According to one embodiment of the present invention, an RF switch includes a plurality of first switches coupled in series between a transmit port and a common port for transmitting an RF signal, and a plurality of second switches coupled in series between a receive port and the common port. At least two of the plurality of second switches have different sizes such that the at least two of the second switches have substantially the same nodal impedance with respect to a frequency of the RF signal and an RF ground.

Abstract: A single pole multiple-throw switch for switching an RF signal to one of a plurality of outputs includes coupling the signal to a throw junction, said junction having connected thereto a plurality of switch legs, each leg includes a high voltage shunt diode spaced one quarter-wavelength from the throw junction; each diode mounted at its cathode end to a capacitor and adapted to receive a bias; wherein a controller applies a first DC bias to a selected one of the diodes to cause the selected diode to operate in reverse bias mode, such that the selected diode mounted on the corresponding capacitor provides a low insertion loss to pass the RF signal from the transmission line through the selected leg and to one of the outputs; and applies a second DC bias to the other diodes to cause the other diodes to operate in forward bias mode such that the other diodes mounted onto the corresponding capacitor provides a high insertion loss for blocking the RF signal to the remaining outputs.

Abstract: A high-frequency circuit for use in a multiband wireless apparatus for switching the connection between an antenna and transmission/reception circuits depending on signals for pluralities of communications systems, comprising a single-pole, multi-throw switch circuit comprising FET switch circuits between a common port connected to an antenna-side circuit and pluralities of single ports connected to the transmission/reception circuits, and a first matching circuit connected to the common port; the first matching circuit comprising a first inductance element connected in series to a signal path between the antenna and the common port, and a first capacitance element connected to the first inductance element on the antenna side and grounded; the first inductance element making the impedance of the single-pole, multi-throw switch circuit inductive when the single port is viewed from the antenna side; and the first capacitance element adjusting impedance matching between the antenna-side circuit and the transmiss

Abstract: A SPDT or SPMT switch may include a transformer having a primary winding and a secondary winding, where a first end of the secondary winding is connected to a single pole port, where a first end of the primary winding is connected to a first throw port; a first switch having a first end and a second end, where the first end is connected to ground; and a second switch, where a second end of the secondary winding is connected to both a second end of the first switch and a first end of the second switch, where a second end of the second switch is connected to a second throw port, where the first switch controls a first communication path between the single pole port and the first throw port, and where the second switch controls a second communication path between the second throw port and the single pole port.

Abstract: An exemplary embodiment of the present invention described and shown in the specification and drawings is a transceiver with a receiver, a transmitter, a local oscillator (LO) generator, a controller, and a self-testing unit. All of these components can be packaged for integration into a single IC including components such as filters and inductors. The controller for adaptive programming and calibration of the receiver, transmitter and LO generator. The self-testing unit generates is used to determine the gain, frequency characteristics, selectivity, noise floor, and distortion behavior of the receiver, transmitter and LO generator. It is emphasized that this abstract is provided to comply with the rules requiring an abstract which will allow a searcher or other reader to quickly ascertain the subject matter of the technical disclosure. It is submitted with the understanding that it will not be used to interpret or limit the scope or the meaning of the claims.

Abstract: A front-end circuit of the wireless transceiver is disclosed to reduce the number of the pin count of the chip, and achieve the impedance matching. The circuit comprises an antenna unit, a receiver, and a transmitting block, all of which are connected together, wherein there is no switch provided between the receiver and the antenna unit, such that the loss of switch can be avoided for reducing the noise figure and improve the sensitivity of the receiving path accordingly.

Abstract: Circuitry includes a voltage-controlled switch having a transmitter input, a receiver input, and an output that connects to one of the transmitter input and the receiver input. Passive components form a low-pass filter that is electrically connected to the transmitter input. The passive components are part of a multilayer ceramic passive module that includes a base body made of superimposed dielectric layers and electrically conductive layers. The voltage-controlled switch is on an upper portion or a lower portion of the base body.

Abstract: A radio frequency (RF) switch circuit is disclosed to restrict an input signal input to the RF switch from being transferred to a switch controller when a floating resistor is connected to an NMOS FET and a PMOS FET of the RF switch and the switch controller formed through a standard CMOS (Complementary Metal Oxide Semiconductor) process.

Abstract: A semiconductor package having an impedance matching device is disclosed, which is especially applicable to conventional system-in-package structures and system packaging design with high-density I/O design. The impedance matching device achieves impedance matching between a semiconductor chip and a signal transmission wiring on the substrate or between different systems integrated in the semiconductor package by employment of a vertical conductive line or combination of a vertical conductive line and a stub transmission line. The vertical conductive line is electrically connected with the signal transmission wiring on the substrate at one end thereof, and the stub transmission line may be further connected to the other end of the vertical conductive line. This impedance matching device helps to effectively reduce the wiring area of an impedance matching network of the semiconductor package and enhance the flexibility and interchangeability in layout of the wiring.

Abstract: A transmit-receive switch has a transmit port, an antenna port, and a receive port. A first switch couples the transmit port to the antenna port when a signal TxON is asserted. A LOW_BAND signal indicates the selection of a lower band of frequencies. A tuning structure is formed by a second and third switch in series which couple the antenna port to ground through a first capacitor when TxON and LOW_BAND are both asserted, and LOW_BAND may be provided to one or more such tuning structures for multi-band frequency operation. A second capacitor couples the antenna port to ground when a fourth switch is enabled. An inductor couples the antenna port to the receive port. A third capacitor is placed across the receive port and ground. A fifth switch is closed when TxON is asserted. The first through fifth switches can be a CMOS FET with an isolated substrate coupled to ground through an associated resistor.

Abstract: An RF switch for an RF splitter is disclosed, in which the bias voltage for the RF switching elements can be supplied, by means of an RF to DC translator, from the RF signal on the input side to the switch. By means of a native NMOS switch, routing of the RF signal is thus enabled without the necessity for an external power supply.

Abstract: A switch circuit in which the cut-off characteristic is improved over a wide range of frequencies in the microwave band includes a first field-effect transistor functioning as a switch element, a second field-effect transistor and an inductor. A serially connected circuit composed of the inductor and second field-effect transistor is connected in parallel with the first field-effect transistor across the source and drain thereof. The second field-effect transistor is turned on when the first field-effect transistor operates normally and is turned off when the first field-effect transistor is inspected.

Abstract: Disclosed is a DPDT RF switch. The DPDT RF switch includes: first to fourth transmission lines for forming first to fourth ports, respectively; and first to fourth slot line pattern sections. The first slot line pattern section includes: a first slot line; and a first switching device for blocking signal transfer by short-circuiting a gap of a slot line. The third slot line pattern section includes: a third slot line; and a third switching device for blocking signal transfer by short-circuiting a gap of a slot line. The second slot line pattern section includes: a first loop-shaped slot line; a second slot line; and a second switching device for blocking signal transfer by short-circuiting a gap of a slot line. The fourth slot line pattern section includes: a second loop-shaped slot line; a fourth slot line; and a fourth switching device for blocking signal transfer by short-circuiting a gap of a slot line.

Abstract: A high-frequency switch circuit includes: a switch section comprised of a field effect transistor having a plurality of bias circuits and a potential generating circuit for generating bias voltages from a control signal and supplying them to the bias circuits. The field effect transistor forms the passage route of a high-frequency signal by turning on and off in accordance with the control signal. The bias circuits are provided to produce a potential difference between the drain terminal and the source terminal of the field effect transistor and to apply bias voltages lower than the voltage of the control signal to the drain terminal, and the source terminal.

Abstract: For example, in a conventional high frequency switch used for a mobile phone and so on, high frequency distortion is caused by a diode which is turned off upon transmission. A high frequency switch includes a switch circuit for switching transmission and reception performed via a transmitting terminal and receiving terminals, said switch circuit having a diode turned off upon transmission, and a low-pass filter for suppressing high frequency distortion caused by the diode upon transmission.

Abstract: The present invention relates to a switching arrangement and method of manufacturing such an arrangement, wherein first and second series-shunt diode structures (D1/D2, D3/D4) are connected to each other in a mirrored configuration to obtain a basic switching cell. This basic switching cell can be used to build a SPDT switch which in turn can be used to build a DPDT switch or switches of higher complexity. Thereby, high isolation and low power consumption can be achieved with the additional advantage of modularity.