Abstract: A chip-package-antenna integrated structure based on an SIW multi-feed network. A plurality of output terminals of the chip are connected to the SIW multi-feed network through the impedance matching network, to achieve the impedance matching between the chip and the SIW multi-feed network. The output terminal of the SIW multi-feed network is directly connected to the antenna terminals, and two or more input signals experience power combining in the substrate integrated waveguide are combined for power combining. Then the combined millimeter-wave signal is radiated by the antenna, finally realizing the power combining in the chip-package-antenna integrated structure. At the same time, the SIW multi-feed network is composed of a SIW structure, in which a plurality of via holes are arranged spaced apart to form a cavity structure.

Abstract: Embodiments described herein include radio frequency (RF) switches that may provide increased power handling capability. In general, the embodiments described herein can provide this increased power handling by equalizing the voltages across transistors when the RF switch is open. Specifically, the embodiments described herein can be implemented to equalize the source-drain voltages across each field effect transistor (FET) in a FET stack that occurs when the RF switch is open and not conducting current. This equalization can be provided by using one or more compensation circuits to couple one or more gates and transistor bodies in the FET stack in a way that at least partially compensates for the effects of parasitic leakage currents in the FET stack. In addition, multiple FET stacks are implemented in parallel in at least some switch branches to improve settling time for the branch.

Abstract: Embodiments described herein include radio frequency (RF) switches that may provide increased power handling capability. In general, the embodiments described herein can provide this increased power handling by equalizing the voltages across transistors when the RF switch is open. Specifically, the embodiments described herein can be implemented to equalize the source-drain voltages across each field effect transistor (FET) in a FET stack that occurs when the RF switch is open and not conducting current. This equalization can be provided by using one or more compensation circuits to couple one or more gates and transistor bodies in the FET stack in a way that at least partially compensates for the effects of parasitic leakage currents in the FET stack.

Abstract: Semiconductor chips are made increasingly smaller, thanks to improved design techniques and process scaling. Sometimes the bottleneck is not the chip itself but the package size due to many necessary pins. To help reduce the number of package pins, the chip should use less pins by sharing or reusing pins if possible. Therefore, single-ended RF input/output is used for transceiver, and the same pin is shared between RX and TX. A receiver (RX)-transmitter (TX) impedance co-matching method uses multiple bondwires for transceivers sharing one input/output (I/O) pin between RX and TX. The RX input impedance and TX output impedance are transformed closer to each other or even to the same impedance, which makes it possible to get the best RX and TX performance with just one matching network. The chip area is also saved without using on-chip inductors.

Abstract: A pressure sensor assembly and pressure sensing method include a first receive antenna array configured to receive a first signal at a first frequency, a second receive antenna array configured to receive a second signal at a second frequency that differs from the first frequency, and a diode coupled to the first receive antenna array and the second receive antenna array. The diode is configured to receive the first signal at the first frequency and the second signal at the second frequency and output a third signal at a third frequency that is a difference between the first frequency and the second frequency. A transmit antenna array is coupled to the diode. The transmit antenna array is configured to receive the third signal at the third frequency and output the third signal at the third frequency.

Abstract: An antenna apparatus includes: a feed via; a patch antenna pattern electrically connected to one end of the feed via; a ground layer disposed in a position vertically lower than a position of the patch antenna pattern, and having a through-hole through which the feed via passes; a first conductive ring pattern laterally spaced apart from the patch antenna pattern, and having a first through region laterally surrounding the patch antenna pattern; and a second conductive ring pattern disposed in a position vertically higher than a position of the first conductive ring pattern, and having a second through region laterally surrounding the patch antenna pattern, wherein an area of the second through region is greater than an area of the first through region.

Abstract: A multi-band multi-path receiving and transmitting device and method, and a base station system are provided. The multi-band multi-path receiving and transmitting device includes a broadband antenna, at least two multi-frequency couplers, a multi-band transceiver, and a signal processing module. The multi-band transceiver is adopted to decrease the number of the transceivers, thereby reducing the material cost and the mounting cost of the base station system.

Abstract: Apparatuses, methods, and systems for an antenna element are disclosed. For an embodiment, the antenna element includes a feed line layer, a first substrate adjacent to the feed line layer, a ground layer adjacent to the first substrate, a second substrate adjacent to the ground layer, and a third layer adjacent to the second substrate. The feed line layer includes a conductive fork-shape that includes a conductive handle adapted to be electrically connected to a center conductor of a coaxial line, a conductive cross-section that crosses an end portion of the conductive handle, and a plurality of conductive fingers. For an embodiment, a rectangular slot is formed in the ground layer, wherein a length of the rectangular slot is perpendicular to the conductive handle. For an embodiment, the third layer includes four parasitic elements, wherein each parasitic element is electrically connected to the ground layer through a shorting via.

Abstract: A discrete capacitance switching circuit includes a DC decoupling capacitor connected between a power node that receives an AC signal and a first node, a diode connected between the first node and a second node, a unit capacitor connected between the second node and a reference node that receives a ground voltage, and a bias circuit. The bias circuit is configured to apply a first DC voltage to the first node and apply a second DC voltage to the second node. The applied first and second DC voltages control a switching operation of the diode.

Abstract: A passive phase shifter includes a reference line and a half-wavelength transmission line, where the half-wavelength transmission line is loaded with a perpendicular quarter wavelength rectangular stub and a quarter wavelength radial stub structure connected in series.

Abstract: A micro-electro-mechanical system (MEMS) transfer switch is disclosed. The transfer switch comprises a single-pole, N-throw switch section having N selectable switches. Each selectable switch of the N selectable switches has an input, a control terminal and an output. An electrically conductive line is coupled to each of the selectable switches of the N selectable switches. The transfer switch includes a single-pole, M-throw switch section having M selectable switches coupled to the conductive line, each selectable switch of the M selectable switches having an output, a control terminal and an input. The single-pole, N-throw switch section and the single-pole, M-throw switch section are packaged in a single micro-electro-mechanical system (MEMS) die. The N and M are numbers between two and eight and the N selectable switches and the M selectable switches are different switches.

Abstract: A sensor package including a fixed frame, a moveable platform, elastic restoring members and a sensor chip is provided. The moveable platform is moved with respect to the fixed frame, and used to carry the sensor chip. The elastic restoring members are connected between the fixed frame and the moveable platform, and used to restore the moved moveable platform to an original position. The sensor chip is arranged on the elastic restoring members to send detected data via the elastic restoring members.

Abstract: Systems for providing isolation of a bias signal relative to a radio frequency (RF) signal in an integrated circuit, and related circuits, modules, and methods, are disclosed herein. In one example embodiment, a system includes an inductor, a bypass capacitor, and a transmission line segment, which includes first and second ends and extends between the first and second ends. The first end is at least indirectly coupled to the bypass capacitor, the second end is at least indirectly coupled to a first additional end of the inductor, and a second additional end of the inductor is configured to be coupled at least indirectly to a device through which the RF signal is being communicated. The transmission line segment is configured to impart a non-negligible phase shift to a signal communicated between the first and second ends, or is configured to have a non-negligible effective inductance.

Abstract: A power divider capable of implementation in a compact multilayer surface mount component to perform power division/combining with low insertion loss, wide bandwidth, design flexibility and high power handling capabilities. The power divider has a first pair of coupled transmission lines interconnecting the input to the outputs, a second pair of coupled transmission lines interconnecting the output ports to grounded isolation resistors, and a single transmission line interconnecting the second pair of coupled transmission lines. The surface mount implementation is by a first layer supporting the ports, a second layer providing edge coupled lines, a third layer having ground plane, a fourth layer and a fifth layer each supporting one of a pair of broadside coupled lines, a sixth layer with another ground plane, and a seventh layer including a single line interconnecting the broadside coupled lines.

Abstract: According to some aspects, a quantum mechanical system is provided, comprising a resonator having a plurality of superconducting surfaces and configured to support at least one electromagnetic oscillation mode within a three-dimensional region, wherein the plurality of superconducting surfaces include a first superconducting surface that defines a first plane, and a physical qubit comprising at least one planar component that is planar within the first plane and borders the three-dimensional region.

Abstract: A high-frequency switch module (10) includes a switch element (20) and LC parallel resonant circuits (31 and 32). The switch element (20) includes selection target terminals (P14 and P21) used to transmit communication signals using different frequencies. The LC parallel resonant circuits (31 and 32) are connected between a connection conductor (901) connected to the selection target terminal (P14) and a connection conductor (902) connected to the selection target terminal (P21). The LC parallel resonant circuits (31 and 32) are connected in series between the connection conductors (901 and 902). The LC parallel resonant circuits (31 and 32) have different attenuation pole frequencies.

Abstract: A sensor package including a fixed frame, a moveable platform, elastic restoring members and a sensor chip is provided. The moveable platform is moved with respect to the fixed frame, and used to carry the sensor chip. The elastic restoring members are connected between the fixed frame and the moveable platform, and used to restore the moved moveable platform to an original position. The sensor chip is arranged on the elastic restoring members to send detected data via the elastic restoring members.

Abstract: A high throw-count multiple-pole FET-based RF switch architecture that provides good RF performance in terms of insertion loss, return loss, isolation, linearity, and power handling. A common port RFC is coupled along a common path to multiple ports RFn. Embodiments introduce additional common RF path branch isolation switches which are controlled by state dependent logic. The branch isolation switches help to isolate the unused branch ports RFn and the unused portion of the common path from the active portion of the common path, and thereby reduce the reactive load attributable to such branches that degrades RF performance of the ports RFn “closer” to the common port RFC. The branch isolation switches can also be used to reconfigure the switch architecture for a multiplex function as well as separate switch path banks for re-configurability of purpose, tuning, or varying switch throw counts and packaging options.

Abstract: Apparatus and arrangements for reducing crossover coupling of two or more RF signals are described. In one case, a crossover structure is described where RF signals are routed through coplanar waveguides having a specific characteristic impedance and crossing at a central point of the crossover structure by way of a bridge. Further described is a multi-port rotary RF switch fitted with the crossover structure which allows substantially balanced electrical performance across all the operational states of the rotary RF switch at RF signal frequencies up to 50 GHz and beyond. A controller unit coupled to the RF switch can support a control interface to configure the rotary switch according to all possible distinct states of the rotary switch, or a subset thereof.

Abstract: Semiconductor switches in portable transceivers switch between outgoing and incoming radio frequency signal paths. The isolation can be limited by the capacitive coupling between the switch input and the switch output. Ultra-high isolation can be achieved by adding a coupled transmission line to the semiconductor switch. The coupled transmission line introduces inductive coupling, which cancels at least a part of the capacitive coupling between the switch input and the switch output.

Abstract: A high throw-count multiple-pole FET-based RF switch architecture that provides good RF performance in terms of insertion loss, return loss, isolation, linearity, and power handling. A common port RFC is coupled along a common path to multiple ports RFn. Embodiments introduce additional common RF path branch isolation switches which are controlled by state dependent logic. The branch isolation switches help to isolate the unused branch ports RFn and the unused portion of the common path from the active portion of the common path, and thereby reduce the reactive load attributable to such branches that degrades RF performance of the ports RFn “closer” to the common port RFC. The branch isolation switches can also be used to reconfigure the switch architecture for a multiplex function as well as separate switch path banks for re-configurability of purpose, tuning, or varying switch throw counts and packaging options.

Abstract: An RF matrix switch has a first set of card slots at selected locations on the chassis and a second set of card slots at different selected locations on the chassis as well as input cards and output cards. The input cards, the output cards, the first set of card slots and the second set of card slots are all configured so that the input cards and the output cards fit into all of these slots. Reroute cards can be provided for any unused card slots. The RF matrix switch also may have an active power management system in which there is a power control switch connected to each amplifier that turns the amplifier off when the amplifier is not being used.

Abstract: A radio frequency switch circuit may include a first switch circuit unit connected between a signal port and an antenna port, a second switch circuit unit connected between the signal port and a ground, and a third switch circuit unit connected between the antenna port and the ground. An operation reference voltage of the third switch circuit unit is lower than an operation reference voltage of the first switch circuit unit.

Abstract: Techniques for improving performance of a transformer shared amongst a plurality of operating modes. In an aspect, first and second primary windings of a transformer are coupled to an AC ground voltage. Primary windings are mutually coupled to a secondary winding of the transformer. To render the second primary winding inactive, e.g., when operating in a first mode, a switch coupling the second primary winding to the common reference voltage is opened. Similarly, when it is desired to render the first primary winding inactive, e.g., when operating in a second mode, a switch coupling the first primary winding to the common reference voltage is opened. In this manner, the inactive primary winding advantageously does not load the secondary winding. Further aspects provide for, e.g., extending the techniques to more than two modes, and alternative techniques to mutually couple the signal from the primary to the secondary winding.

Abstract: An electronic component includes a capacitor having a desired capacitance value and a laminate including a plurality of laminated insulating material layers. Land electrodes are provided on a bottom surface of the laminate. Internal conductors face the land electrodes, respectively, across the insulating material layer within the laminate, have areas larger than those of the land electrodes, respectively, and contain the land electrodes, respectively, when seen in a planar view from a z-axis direction. A capacitor conductor is provided on the positive direction side of the capacitor conductors in the z-axis direction and faces the capacitor conductors.

Abstract: A fast response time, self-activating, adjustable threshold limiter including a limiting element LE, a first coupling element CE1 electrically connected from a signal node of LE to a control input of LE, and a second coupling element CE2 electrically connected from the control input of LE to a nominal node of LE. An initial bias (control) voltage is also supplied to the control input of LE to dynamically control the limiting threshold for the limiter. Embodiments include usage of self-activating adjustable power limiters in combination with series switch components in a switch circuit in lieu of conventional shunt switches.

Abstract: A second conductor (200) is opposite to a first conductor (100), and is repeatedly arranged. A plurality of vias (400) are provided to each of a plurality of second conductors (200), and provide an inductance component between the first conductor (100) and the second conductor (200). A third conductor (300) is connected to a first one of the second conductors (200) through a via (500), and is opposite to a second one of the second conductors (200) located next to the first one of the second conductors (200), to thereby form a transmission line between the first one of the second conductors and the second one of the second conductors (200). That is, the third conductor (300) functions as a stub together with the second one of the second conductors (200).

Abstract: A multichannel RF switching device of an embodiment has a connector in which all or some of a plurality of terminals are configured to be connected to a plurality of coil elements, a matrix switch having a plurality of input ports arranged in a line and a plurality of output ports arranged in a line, and a wiring portion connecting the respective terminals configured to be connected to the plural coil elements with a plurality of input ports in use included in the plural input ports one-on-one, the input ports in use amounting to fewer than the total number of the input ports, wherein the wiring portion connects the respective terminals with the input ports in use one-on-one in such a way that a separation between adjacent two of all or some of the input ports in use is larger than a separation between adjacent two of the input ports.

Abstract: A transmission-line network may include a transmission-line sub-network. The sub-network may include at least first and second transmission lines having respective first ends connected electrically in series relative to a first circuit node and respective second ends connected electrically in parallel relative to a second circuit node. A third transmission line may have a first end directly connected to the second circuit node and a second end electrically connected to the second end of the first transmission line. A fourth transmission line may have a first end directly connected to the second circuit node and a second end electrically connected to the second end of the second transmission line. The transmission-line network may further include an impedance assembly disposed relative to the third and fourth transmission lines configured to produce resistance between the second end of the third transmission line and the second end of the fourth transmission line.

Abstract: A method for filtering a data signal includes transmitting the data signal from a transmitter to a receiver across a conductor disposed in an interposer, which interconnects the receiver and the transmitter. The data signal is low-passed with a filter, which includes a passive resistive element disposed within the interposer and coupled in series electrically with a passive inductive element. In relation thereto, the interposer is disposed in a position within the interposer, or upon a surface thereof. The filter is coupled to the conductor in a shunt configuration with respect to ground.

Abstract: A passive coaxial signal power splitter apparatus includes an input port, an input coaxial waveguide section coupled to the input port, a guided wave structure coupled to the input coaxial waveguide section, a plurality of antenna elements arranged in the guided wave structure, and an output port coupled to each of the antenna elements. A passive coaxial signal power combiner includes a plurality of input ports, a guided wave structure coupled to the plurality of input ports, a plurality of antenna elements in the guided wave structure, wherein each antenna element is coupled to one or more of the input ports, a coaxial waveguide section coupled to the guided wave structure, and an output port coupled to the coaxial waveguide section.

Abstract: A semiconductor device includes a switching unit that is provided on a substrate and controls selection of a high-frequency signal, a low-frequency circuit that is provided on the substrate and processes signals having a frequency lower than that of the switching unit, a first ground portion connected to a ground node of the low-frequency circuit, a ground conductor provided on the substrate, connected to the first ground portion at a first connection position, and connected to the ground node of the switching unit at a second connection position, and a second ground portion connected to the ground conductor, the second ground portion being closer to the second connection position than the first connection position.

Abstract: There is provided a front end module, including an amplification circuit unit amplifying signal, a multistage matching circuit unit connected to an output terminal of the amplification circuit unit, and a switch circuit unit connected to the multistage matching circuit unit, wherein the switch circuit unit includes a series switch circuit and a parallel switch circuit, the parallel switch circuit being connected to a node between a plurality of matching circuits included in the multistage matching circuit unit.

Abstract: A multi-frequency, noise optimized active antenna capable of transmit and receive operation consisting of one or several actively tuned antennas optimized over incremental bandwidths and capable of tuning over a large total bandwidth. One or several switches are integrated and provide the capability of operation of an active antenna for both transmit and receive functions. One or multiple impedance transformers are connected to the antennas at an optimal location, with the transformers acting to reduce the impedance for optimal coupling to a transceiver/receiver. Active components can be incorporated into the antenna structures to provide yet additional extension of the bandwidth along with increased optimization of antenna performance over the frequency range of the antenna. The radiating elements can be co-located with a ferrite material and/or active components coupled to the element to tune across a wide frequency range.

Abstract: The present invention provides a space saving and simply implementable planar integrated switching device comprising at least two CPW-slotline transition units each including an access for inputting and/or outputting a transmission signal, a slotline connecting said at least two CPW-slotline transition units, and a switching element arranged on said slotline between said at least two CPW-slotline transition units for switching the transmission signal over said slotline on and off under control of a switch control signal.

Abstract: A method for controlling a switch based on transistors is disclosed. A switching circuit for switching a signal from an input port to an output port thereof is provided. A shunting circuit for switchably shunting the signal from the input port to ground is also provided. A control signal is generated for biasing a control port of the shunting circuit and an approximately complimentary control signal is generated for biasing of the switching circuit to either shunt a signal received at the input port or to switch the signal to the output port. A further bias signal for biasing a port within the switching circuit along the signal path between the input port and the output port is also provided.

Abstract: Provided is a high frequency switch wherein first switch circuits, each of which includes a first PIN diode, are connected in parallel to one or more first ?/4 signal transmitting paths which transmit transmitting signals, and second switch circuits, each of which includes a second PIN diode, are connected in parallel to one or more second ?/4 signal transmitting paths which transmit receiving signals to a receiving terminal. A first control voltage is applied to the cathode of the first PIN diode, and a second control voltage is applied to the cathode of the second PIN diode. Furthermore, a biasing circuit which applies a constant bias voltage is connected to each anode of the first PIN diode and the second PIN diode.

Abstract: Provided is a RF switch for switching a path of a RF signal using a semiconductor transistor such as a field effect transistor (FET). The RF switch includes a plurality of resonators connected to a RF transmission line, and at least one of switching elements connected in shunt or in series between the plural of resonators. The plurality of resonators resonate by interacting with the switching elements when the switching elements are shorted or open.

Abstract: A circuit includes an amplifier having an input and an output; and at least one transistor comprising at least one terminal and at least one isolated well. The input of the amplifier is electrically connected to the at least one terminal of the transistor; and the output of the amplifier is electrically connected to the at least one isolated well of the at least one transistor.

Abstract: A method for controlling a switch based on transistors is disclosed. A switching circuit for switching a signal from an input port to an output port thereof is provided. A shunting circuit for switchably shunting the signal from the input port to ground is also provided. A control signal is generated for biasing a control port of the shunting circuit and an approximately complementary control signal is generated for biasing of the switching circuit to either shunt a signal received at the input port or to switch the signal to the output port. A further bias signal for biasing a port within the switching circuit along the signal path between the input port and the output.

Abstract: Techniques, apparatus and systems for a multiple pole multiple throw (MPMT) RF switch device based on composite left and right handed (CRLH) metamaterial structures.

Abstract: Disclosed is a high frequency switch wherein a first switch circuit is connected in series to a first ?/4 signal transmission path connected between an antenna connecting terminal and a transmission terminal. In the first switch circuit, a first ?/4 transmission path and a first parallel resonant circuit, which includes one first PIN diode, are connected in series. In a first inductor of the first parallel resonant circuit, a constant is set so that a resonance frequency of the first parallel resonant circuit and the center frequency of a first antenna switch are the same when the first PIN diode is turned off.

Abstract: A high-frequency switch module includes an ESD device, a switch IC, and a SAW filter element that are mounted on the surface of a multilayer substrate. A ground-side land for the ESD device is connected to an external-connection ground electrode for the ESD device by via holes and plane electrode patterns. A ground connection land for the switch IC and a ground connection land for the SAW filter element are connected to a common inner ground electrode by via holes, and are connected to a common external-connection ground electrode by via holes and another common inner ground electrode.

Abstract: A circuit includes an amplifier having an input and an output; and at least one transistor comprising at least one terminal and at least one isolated well. The input of the amplifier is electrically connected to the at least one terminal of the transistor; and the output of the amplifier is electrically connected to the at least one isolated well of the at least one transistor.

Abstract: A CMOS monolithic transmit/receive switch comprises a single pole double throw switch (SPDT) module operable to selectively connect an antenna port to either a transmit port or to a receive port. A transmit matching network comprising a first transmission line matches the impedance of the transmit port of the SPDT module to a transmit impedance, and a first shunt transistor is operable to selectively ground a transmitter end of the first transmission line. A receive matching network comprising a second transmission line matches the impedance of the receive port of the SPDT module to a receive impedance, and a second shunt transistor is operable to selectively ground a receiver end of the second transmission line.

Abstract: The present invention provides an RF switch, including a diode adapted to operate as a switch when a control current is applied thereto, a first CRLH transmission line of a ? degree phase, which provides one signal transfer path from a terminal 1 to a terminal 2 when the diode is shorted due to application of a control current, and a second CRLH transmission line of a ?-180 degree phase, which has a 180 degree phase difference from that of the first CRLH transmission line and provides the other signal transfer path from the terminal 1 to the terminal 2. The present invention provides an RF switch having a broad-band characteristic by employing a CRLH transmission line. More specifically, the present invention provides a ring-shaped RF switch, which has a broad-band characteristic and can also be miniaturized at a low frequency band, by employing a CRLH transmission line having a 180 degree phase difference in a broad band.

Abstract: The invention relates to an electronic switching device for high-frequency signals. The invention is of particular use in the connection between a microwave frequency antenna and an electronic circuit. This circuit comprises one or two access points designed to be connected to the antenna forming a third access point. In the case of a switch between one access point and the antenna (called an SPST switch), it comprises two switching diodes, one, called a serial diode, being connected in series between the access points and the other, called a shunt diode, between one of the access points and an earth of the device.

Abstract: Provided is an in-millimeter-wave dielectric transmission device. The in-millimeter-wave dielectric transmission device includes a semiconductor chip provided on one interposer substrate and capable of in-millimeter-wave dielectric transmission, an antenna structure connected to the semiconductor chip, two semiconductor packages including a molded resin configured to cover the semiconductor chip and the antenna structure, and a dielectric transmission path provided between the two semiconductor packages to transmit a millimeter wave signal. The semiconductor packages are mounted such that the antenna structures thereof are arranged with the dielectric transmission path interposed therebetween.

Abstract: Disclosed is a transmit/receive circuit arrangement wherein a transceiver circuit including a transmit/receive switch is fabricated on an integrated circuit chip. A matching network is wholly disposed off-chip relative to the integrated circuit chip. In embodiments, at least a portion of the matching network is formed off-chip and a portion of the matching network is formed on-chip.

Abstract: A single pole multiple-throw switch for switching an RF signal to one of a plurality of outputs includes coupling the signal to a throw junction, said junction having connected thereto a plurality of switch legs, each leg includes a high voltage shunt diode spaced one quarter-wavelength from the throw junction; each diode mounted at its cathode end to a capacitor and adapted to receive a bias; wherein a controller applies a first DC bias to a selected one of the diodes to cause the selected diode to operate in reverse bias mode, such that the selected diode mounted on the corresponding capacitor provides a low insertion loss to pass the RF signal from the transmission line through the selected leg and to one of the outputs; and applies a second DC bias to the other diodes to cause the other diodes to operate in forward bias mode such that the other diodes mounted onto the corresponding capacitor provides a high insertion loss for blocking the RF signal to the remaining outputs.