Abstract: An RF switch is provided. In the RF switch, a slot line is divided into a first slot line and a second slot line and an open-end circuit is provided at each end portion of the first and second slot lines. A first transmission line delivers signals from and to the first slot line, and a second transmission line delivers signals from and to the second slot line. A third transmission line delivers signals from and to the portion of the slot line that separates the first slot line from the second slot line. A variable sub open-end circuit portion includes at least one open-end circuit which is selectively switched to the first or second slot line according to an external switching control signal.

Abstract: A millimeter waveband switch which enables high isolation without increasing passing loss, includes a first switching element that is connected in series between input and output terminals through which a signal passes; and a first transmission line having an electrical length of ½ wavelength and which is connected in parallel with the first switching element. Alternatively, the millimeter waveband switch may include: a first switching element having a first end connected in parallel to input and output terminals through which a signal passes; a first transmission line having an electrical length of ½ wavelength which is connected in parallel with the first switching element; and a second transmission line having an electrical length of ½ wavelength and which is connected between ground and a second end of the first switching element.

Abstract: An antenna switch module between several radio-frequency transmit and/or receive paths including, between a common terminal on the antenna side and an access capacitor specific to each path, at least one diode, the number of diodes directly connected to the common terminal being odd and the number of diodes having their cathode on the common terminal side being equal, with a difference of one, to the number of diodes having their anode on the common terminal side.

Abstract: A millimeter-band switching circuit easily corrects a varied off capacitance of a switching element without shifting position of the switching element. The millimeter-band switching circuit includes: a coupling line having a line length that can be changed; a first input and output terminal; a second input and output terminal; a first transmission line connected between the first input and output terminal and a first end of the coupling line; a second transmission line connected between the input and output terminal and a second end of the coupling line; a first field effect transistor (FET) connected in parallel with the first transmission line; and a second FET connected in parallel with the second transmission line and turned ON/OFF simultaneously with turning ON/OFF of the first FET.

Abstract: An RF switch is provided. In the RF switch, a T-junction slot line has a horizontal slot line and a vertical slot line. An open-end circuit is provided at each end portion of the horizontal and vertical slot lines. A first transmission line delivers signals from and to one portion of the horizontal slot line, and a second transmission line delivers signals from and to the other portion of the horizontal slot line. A third transmission line delivers signals from and to the vertical slot line. A switching circuit selectively switches the signal path of the one or the other portion of the horizontal slot line to the vertical slot line according to an external switching control signal.

Abstract: Four SP4T switches (31-34) are grouped in twos to form two switch pairs. First conductive lines (411-414, 421-424) are arranged in fours between the SP4T switches (31, 34; 32, 33) constituting the switch pairs. Each of four second conductive lines (51-54) connects to a corresponding one of different conductive lines of the first conductive lines which connect to the respective switch pairs. The first and second conductive lines are arranged on a dielectric layer having a lower surface on which a ground conductor (6) is formed. The dielectric, layer has a two-layer structure. The first conductive lines are arranged on the first dielectric layer as a lower layer. The second conductive lines are arranged on the second dielectric layer as an upper layer. This arrangement makes it possible to attain a reduction in the size of a matrix switch and a reduction in loss and allow broadband operation.

Abstract: The filter has a switch function of selectively transmitting a transmission signal through one of first and second branch waveguides branching from a primary waveguide. The filter includes resonators disposed in the first and second branch waveguides. The resonator includes a space formed inside a metal cover, a central conductor disposed inside the space, and a short-circuiting plate. The central conductor has one end grounded to an outer conductor. The short-circuiting plate allows the neighborhood of an open end of the central conductor to be selectively conducted to the outer conductor. The filter performs a selection from the first and second branch waveguides by switching electrical conductivity in a region between the neighborhood of the open end of the central conductor and the outer conductor.

Abstract: A dual band digital multimedia broadcasting (DMB) receiver is provided. The dual band DMB receiver of the present invention includes a first and a second antenna for receiving first and second frequency band signals, respectively; a body for recovering the signals received by the first and second antennas; and a switch unit for selectively connecting the first and second antennas to the body. The dual band DMB receiver of the present invention is implemented with a single RF switch for measuring at least two frequency band signals, whereby it is possible to reduce the manufacturing costs of the DMB receiver and secure space for other components.

Abstract: A switch circuit 1 includes a unit circuit including capacitors 12, 14, an inductor 20, and a FET 30 (switching element). The capacitors 12, 14 are provided in a path P1 (first path) connecting I/O terminals 92, 94. The capacitors 12, 14 are serially connected to each other. To the path P1, a path P2 (second path) is connected. The path P2 includes the inductor 20 and the FET 30, which are serially connected to each other. To be more detailed, an end of the inductor 20 is connected to a connection point N, and the drain (or source) of the FET 30 is connected to the other end of the inductor 20. The source (or drain) of the FET 30 is grounded.

Abstract: The invention provides a phase shifter with flexible control voltage that is useful with all RF systems that phase shift a RF signal. The phase shifter according to the present invention may comprise transistors used as switching elements. In one aspect, the phase shifter provides the option of controlling a phase shifter with either a positive or a negative voltage control signal. For example, the dc ground of the transistors included in the phase shifter may be floated i.e. fixed or adjusted. The RF grounding of the transistors may be achieved by in-band resonant capacitors. Thus, the control voltage provided to the transistors is flexible in that it may be connected to a positive or negative control voltage, or it may be connected to ground, or it may swing from a positive control voltage to a negative control voltage or vice versa.

Abstract: A microwave switch array includes a plurality of microwave slotlines, each of which is controlled by a semiconductor switch including a first PIN junction formed by a primary P-type electrode and a primary N-type electrode separated by the slotline. The switches inject a plasma into the slotline in response to a potential applied across the first PIN junction. Each of the switches includes a second PIN junction between the primary P-type electrode and a secondary N-type electrode, and a third PIN junction between the primary N-type electrode and a secondary P-type electrode. Metal contacts connect the primary P-type electrode and the secondary N-type electrode across second PIN junction, and the primary N-type electrode and the secondary P-type electrode across the third PIN junction. The secondary electrodes extract plasma that diffuses away from the first PIN junction, thereby minimizing the performance degrading effects of plasma diffusion.

Abstract: A linear antenna switch arm comprising a field effect transistor comprising a source, a drain and a plurality of gates; a signal line connected between source and drain, the signal line comprising at least one signal line resistor; at least one gate being connected to the signal line by a connection line, the join between connection line and signal line comprising a node; the at least one gate being selected from the plurality of gates such that the adjacent gates on each side of the connected gates are not connected to the signal line.

Abstract: An antenna switch module includes a filter which reduces transmission loss so as to achieve high attenuation in a wide band at harmonic frequencies. This antenna switch module includes the filter, an antenna switch circuit and an adjustment line. The filter passes fundamental frequencies and has an attenuation pole. The antenna switch circuit switches antennas. The adjustment line is connected between the filter and the antenna switch circuit. The adjustment line adjusts its length, and when the filter and the antenna switch circuit are directly connected with each other at a connection point, prevents the impedance when the filter is seen from the connection point and the impedance when the antenna switch circuit is seen from the connection point from becoming complex conjugates of each other at the harmonic frequencies.

Abstract: A small-sized, low-cost radio frequency switch circuit, which has good characteristics of isolation between a transmission circuit and a reception circuit, includes a multi-layered substrate; a transmission line provided on the top surface of, or within, the multi-layered substrate; a first diode and a second diode connected respectively to both ends of the transmission line; a resistor, connected to the first diode, to apply a current to the first diode and the second diode; a first capacitor whose one end is connected to the resistor and whose other end is grounded; and a second capacitor connected in parallel to the transmission line.

Abstract: The invention is directed to a multi-band switch having a transmitter switching section with a plurality of transmission ports, and a receiver switching section with a plurality of receiver ports, each having associated switching topologies to switch one of the ports to an antenna port. The switching topologies may use a plurality of series-connected FETs, such as insulated gate n-channel FETs, where the transmitter port switching elements may have larger switching transistors than the receiver port switching elements. The main signal path transistors of the transmitter and receiver switching elements be interdigitated FETs, in which source region fingers and drain region fingers alternate within the transistor area. These interdigitated source and drain regions may be spaced apart from each other by a sinuous channel region, over which is a gate metallization.

Abstract: Provided is a switching apparatus connecting a transmission line designated among transmission lines, between input and output terminals, and preventing a signal at the terminal from leaking to a control wiring, becoming a noise, and being superposed onto a signal at the other end. The switching apparatus includes: a plurality of input series switches switching the connection state between one end of the transmission lines and the input terminal according to a control signal; a plurality of output series switches switching the connection state between the other end of the transmission lines and the output terminal according to a control signal; a plurality of control wirings that supply a control signal to the input series switch and the output series switch; and a noise removal section that is provided between the input series switch and the output series switch and that reduces a noise propagated via a control wiring.

Abstract: A non-reflective SPNT switching device comprises one pole, at least three throws, a plurality of main switches, and a plurality of bridge switches. The bridge switches enable all throws to be non-reflective. Each main switch is coupled between the pole and one of the throws. One main switch has a first (eg ON) state, the one main switch being coupled to an active throw in a conducting signal path, and each other main switch has a second (eg OFF) state. Each throw is operably coupled to first and second adjacent throws through first and second adjacent bridge switches. For the active throw, the first and second bridge switches have the second state. For each non-active throw, one of the adjacent bridge switches has the first (eg ON) state and one of the adjacent bridge switches has the second state.

Abstract: A common terminal 500 is connected to drains of FETs 101 and 102 via a capacitor 400. FETs 111 to 114 are serially connected, and inserted between a source of the FET 101 and a terminal 501 via a capacitor 401. Similarly, each of: FETs 121 to 124; FETs 131 to 133; FETs 141 to 143; FETs 151 to 153; and FETs 161 to 163 is inserted between the source of the FET 101 or an FET 102 and a corresponding one of terminals 502 to 506. This configuration allows a stray capacitance value of a transmission/reception path to be reduced at the time of transmission/reception, thereby obtaining a favorable radio-frequency characteristic.

Abstract: Disclosed is a switch circuit capable of reducing distortion caused by harmonics and preventing an increase in insertion loss even if the number of ports increases. The switching circuit includes one common output port, M first switches having one set of ends connected in common to a first node (M?2 where M is a constant), N second switches having one set of ends connected in common to the common output port (N?1 where N is a constant), a third switch having one end connected to the common output port and the other end connected to the first node, M first input ports respectively connected to the other set of ends of the first switches, and N second input ports respectively connected to the other set of ends of the second switches. One selected among the first input ports and the second input ports is connected to the common output port, and if one of the first input ports is selected, the third switch is closed.

Abstract: A switch circuit including: a plurality of MEMS switches connected in parallel or in series, which have different drive voltages; and a single voltage supply for driving the plurality of MEMS switches by the plurality of drive voltages, is used for a microwave circuit or an antenna circuit, to vary a configuration of the microwave circuit or the antenna circuit based on the drive voltage value. That is, the configuration of the microwave circuit or the antenna circuit can be varied based on the drive voltage value by using the switch circuit including the MEMS switches having the different drive voltages for the microwave circuit or the antenna circuit.

Abstract: A traveling-wave switch includes a FET-integrated Coplanar Waveguide (CPW) line structure. The FET-integrated CPW line structure incorporates a transistor, a signal line, and the ground, that can be used to eliminate the limitations imposed by the parasitic inductance of the prior art on the operation frequency of the switch. The signal line is connected directly to the drain of the transistor, eliminating the parasitic inductance caused by the connection wire between the signal line and the transistor. The source of the transistor is coupled directly to the ground of the coplanar waveguide line, thus eliminating the parasitic inductance between the transistor and ground, and raising the operation frequency of the switch.

Abstract: A method to improve characteristics of PIN diode switches, attenuators, and limiters via the control of nodal signal voltages by local impedance control.

Abstract: According to one exemplary embodiment, a switching device with phase selection terminals to select between at least two phase shifting modes to reduce intermodulation distortion in the switching device includes a first phase selection terminal to select a first phase shifting mode of the switching device by enabling a first phase shifter in a first phase shifting switching branch coupled to an input of the switching device. The switching device further includes a second phase selection terminal to select a second phase shifting mode of the switching device by enabling a second phase shifting switching branch coupled to the switching device input. The intermodulation distortion in the switching device is reduced by selecting one of the first and second phase shifting modes. The switching device may further include a number of FETs coupled in series between an output of the switching device and the first and second phase shifting switching branches.

Abstract: According to one exemplary embodiment, a switching device with phase selection terminals to select between at least two phase shifting modes to reduce intermodulation distortion in the switching device includes a first phase selection terminal to select a first phase shifting mode of the switching device by enabling a first transmission line in a first phase shifting switching branch coupled to an input of the switching device. The switching device further includes a second phase selection terminal to select a second phase shifting mode of the switching device by enabling a second phase shifting switching branch coupled to the switching device input. The intermodulation distortion in the switching device is reduced by selecting one of the first and second phase shifting modes. The first transmission line is enabled by enabling a FET coupled in series with the first transmission line in the first phase shifting switching branch.

Abstract: A single pole N throw (SPNT) switch arrangement including: a pole, one or more throw nodes and a switch mechanism arranged to connect the pole and a first throw node in response to a first signal and to disconnect the pole and the first throw node in response to a second signal; an interconnect, for providing the first signal, arranged for connection to the pole when providing the first signal; and a dc power source arranged to control a dc bias applied to the interconnect to provide the first signal

Abstract: A high-frequency switch circuit common to a plurality of frequency bands includes a first high-frequency switch adapted to pass transmission signals and block received signals; and a demultiplexer. The high-frequency switch circuit passes one of the received signals of first and second frequency bands and blocks the other.

Abstract: A semiconductor device comprises a semiconductor switching element having a first electrode, a second electrode and a third electrode, and permitting a high-frequency signal to pass through between the first electrode and the second electrode, depending upon the potential of the third electrode, bias voltages at the first and second electrodes being substantially equal; and an inductor element and a capacitor element which are connected in parallel with respect to the semiconductor switching element at the first and second electrodes and are connected in series to each other.

Abstract: A high-frequency switching module in which a high-frequency switch including a diode, which functions as a switching device, and a high-frequency filter including inductors and a capacitor are integrated with each other. The inductor defining a ?-type high-frequency filter is connected directly and in series to the diode. By inserting the inductor, the cut-off frequency of a Chebyshev-type low-pass filter circuit produced when the diode is turned ON can be shifted to a lower frequency side, and also, the ripple can be suppressed to a small level.

Abstract: The present invention is a wide dynamic range antenna switch that, when disabled, has a stable input impedance over a wide power range. The wide dynamic range antenna switch includes multiple transistors, which are coupled in series, to provide a main signal path between an antenna connection and a radio connection. Direct current (DC) bias signals are provided to each of the transistors to ensure than when the antenna switch is disabled, the input impedance is stable. A control input, which may operate with low voltage control signals, enables or disables the antenna switch. The antenna switch may be coupled with other antenna switches in a communications system with multiple transceivers sharing a common antenna, and with a wide range of transmitter output power levels. Different embodiments of the present invention provide different DC bias circuit architectures.

Abstract: An RF switch is provided. In the RF switch, a T-junction slot line has a horizontal slot line and a vertical slot line. An open-end circuit is provided at each end portion of the horizontal and vertical slot lines. A first transmission line delivers signals from and to one portion of the horizontal slot line, and a second transmission line delivers signals from and to the other portion of the horizontal slot line. A third transmission line delivers signals from and to the vertical slot line. A switching circuit selectively switches the signal path of the one or the other portion of the horizontal slot line to the vertical slot line according to an external switching control signal.

Abstract: An RF switch is provided. In the RF switch, a slot line is divided into a first slot line and a second slot line and an open-end circuit is provided at each end portion of the first and second slot lines. A first transmission line delivers signals from and to the first slot line, and a second transmission line delivers signals from and to the second slot line. A third transmission line delivers signals from and to the portion of the slot line that separates the first slot line from the second slot line. A variable sub open-end circuit portion includes at least one open-end circuit which is selectively switched to the first or second slot line according to an external switching control signal.

Abstract: A high frequency switch includes electrically connected switching elements, such as a first diode, a second diode, inductors, capacitors, and a resistor. A diode having a smaller charge capacity in the ON state is used as the first diode, while a diode having a larger charge capacity in the ON state is used as the second diode. That is, the first and second diodes utilize different part number diodes. A diode part number having a smaller charge capacity is used as the first diode, while a diode part number having a larger charge capacity is used as the second diode. Alternatively, the charge capacity of diodes that belong to the same lot may be measured and classified, so that a smaller charge capacity diode is used as the first diode, while a larger charge capacity diode is used as the second diode.

Abstract: A millimeter-band switching circuit easily corrects a varied off capacitance of a switching element without shifting position of the switching element. The millimeter-band switching circuit includes: a coupling line having a line length that can be changed; a first input and output terminal; a second input and output terminal; a first transmission line connected between the first input and output terminal and a first end of the coupling line; a second transmission line connected between the input and output terminal and a second end of the coupling line; a first field effect transistor (FET) connected in parallel with the first transmission line; and a second FET connected in parallel with the second transmission line and turned ON/OFF simultaneously with turning ON/OFF of the first FET.

Abstract: A high isolation electronic multiple pole multiple throw (MPNT) switching device is formed as a ring circuit that includes plural poles, plural throws, plural series switches and plural means for shunting. Each series switch receives a control signal, and each means for shunting receives shunt control signals. In one aspect, the shunt control signals include control signals received by distant series switches. In another aspect, the shunt control signals include control signals received by adjacent series switches. In another aspect, the shunt control signals include signals complementary to signals received by adjacent series switches. In another aspect, the shunt control signals include pole DC potentials or throw DC potentials. In another aspect, a switching device may operate in multiple transmission mode or multiple input multiple output (MIMO) mode. The MPNT switching device provides low insertion loss and high isolation at a wide range of frequencies.

Abstract: A method for inspecting a semiconductor device includes establishing a first circuit state in which electrical conduction through at least one of branch transmission line portions is established and electrical conduction through at least one other branch transmission line portion is prevented. Then, electrical signal reflection characteristics of the transmission line are measured. The method also includes establishing a second circuit state in which electrical conduction through the at least one of the branch transmission line portions is prevented and electrical conduction through the at least one other branch transmission line portions is established. Then, the electrical signal reflection characteristics of the transmission line are measured. The second circuit state is a mirror image of the first circuit state with respect to the primary transmission line. The measured values are compared.

Abstract: A single pole single throw switch for controlling propagation of a high frequency signal between an input terminal (11a) and an output terminal (11b). First FET switches (14a, 14b) in which drains and sources of FETs (12a, 12b) are connected in parallel with inductors (13a, 13b) are connected in parallel. Each FET (12a, 12b) is switched between on state and off state by a voltage being applied to the gate thereof. At the frequency of the high frequency signal, each inductor (13a, 13b) connected with off capacitor of each FET (12a, 12b) resonates in parallel.

Abstract: An object of the present invention is to provide an antenna switch circuit that effectively reduces signal leakages at a cross point even at higher operating frequencies and a high frequency module containing said antenna switch module. The antenna switch circuit comprises: a high frequency signal line to transmit a transmitting signal to be input to transmitting terminals to an antenna terminal and also to transmit a receiving signal to be input to the antenna terminal to receiving terminals; switches that are connected in the middle of the high frequency signal line between transmitting terminal and antenna terminal; switches that are connected in the middle of the high frequency signal line between receiving terminal and antenna terminal; and signal lines to transmit control signals for controlling turning on and off of the switches.

Abstract: A low voltage data transmitting circuit (LVDTC) may be connected to a first transmission line that transmits a first voltage signal to a receiver and a second transmission line that transmits a second voltage signal to the receiver. The LVDTC includes a first resistor coupled to the first transmission line, a second resistor coupled to the second transmission line, and a control unit coupled to the first transmission line and the second transmission line, the control unit being configured to control voltage levels of the first and second voltage signals such that the voltage levels of the first and second voltage signals are higher than a ground voltage level of the receiver, wherein the first and second voltage signals may constitute a differential pair.

Abstract: A high-frequency switching apparatus is composed of a transfer circuit unit including a plurality of FETs, and a shunt circuit unit including a plurality of FETs, as well. An electromagnetic wave absorption material element is connected to an end of the shunt circuit unit. To a connection point between the shunt circuit unit and the electromagnetic wave absorption material element, an external voltage terminal for fixing a potential at the point is connected. By this, a high-frequency switching apparatus is obtained which is excellent in isolation characteristics and is hard to break down even when a signal of a high voltage, such as an electrostatic surge, flows into the apparatus.

Abstract: The present invention relates to a phase shifter device arranged for altering the electrical length of a signal path between at least two different values, which device is adapted for guiding a signal through at least one of at least a first signal path, having a first phase and amplitude filter characteristics for varying frequency of the signal, and a second signal path, having a second phase and amplitude filter characteristics for varying frequency of the signal. At least one of said first and second phase and amplitude filter characteristics is realized by means of an all-pass filter. The present invention relates to a phase shifter device having two bandwidth modes.

Abstract: Upon application of an on-state voltage to a control terminal, an antenna switch provided between an antenna terminal and a transmission terminal is turned on, and a transmission signal of a PCS/DCS system passes from the transmission terminal through the antenna terminal. At this time, a booster circuit, to which a part of the transmission signal is supplied, generates at an output terminal a boost voltage higher than a control voltage output from a controller due to the rectification of diodes, and applies the same to the gate of a transistor circuit of the antenna switch. Since in the booster circuit a resistor is coupled to the output terminal, the passage through resistors of an input transmission power in an RF signal path is only the passage through one resistor, thus reducing the attenuation of the transmission signal and providing an excellent insertion loss characteristic.

Abstract: RF switches are known from the art for selecting an RF signal from a multiple of inputs. For instance a TV-tuner and TV-Front-end can have two or more antenna inputs but are implemented with a relative bad cost performance. The present invention relates to an RF selection switch circuit (200). The switch comprises a first switch (202), a second switch (204) with both an RF input port and a common RF output port a control signal circuitry (206). In a preferred embodiment the switches comprise pin-diodes. The RF output port comprises two transistors (T1, T2), one of which at a time can put the non-selected switch to a low-impedance level in order to minimize signal leakage the common output port.

Abstract: A high-frequency switch operating in a millimeter wave band that includes a signal path having a ?/4 transmission path, for part of two or more branch signal paths that branch from an input connection path via a branch point; an FET, which is shunt-connected between a grounding end and the branch signal paths that are positioned between the ?/4 transmission path and a terminal end, as viewed from the branch point, and used to connect or disconnect the branch signal paths and the grounding end; an output matching circuit, which is positioned on the branch signal paths that are positioned between a terminal end and a connection point for the FET as viewed from the branch point, and includes a shunt-connected stub; and a matching FET, which is connected between the stub and the grounding end and used to connect or disconnect the stub and the grounding end in accordance with the FET's connection/disconnection.

Abstract: A phase shifter includes a first signal path in which a first unit is disposed to advance a phase of a signal; a second signal path in which a second unit with no shunt capacitor is disposed to change the phase of the signal such that the changed phase is delayed than the advanced phase by the first unit; and a switch section configured to switch between the first signal path and said second signal path. The first unit comprises a filter, and the second unit is a transmission line.

Abstract: A transmit-receive switch architecture comprises a first switch coupled to transmit circuitry and to an antenna, a second switch coupled to receive circuitry and to ground, wherein the second switch is configured to couple the receive circuitry to ground during a time period in which a power source associated with the transmit circuitry is enabled.

Abstract: Switch sections composed of a plurality of FETs 111 to 118 and 121 to 128 connected in series are provided between input/output terminals 161 and 162 and ground terminals 181 and 182, and between the input/output terminals 161 to 163. A plurality of gate bias resistors 131 to 138, 141 to 148 are also provided. One terminal of each gate bias resistor is connected to a gate electrode of a corresponding one of the FETs 111 to 118 and 121 to 128, while a control voltage 171 and 172 for switching an ON state and an OFF state of the switch section is applied to the other terminal. Among the FETs included in each switch section, concerning the FETs 114, 115, 124, and 125 to which signal power is applied when the switch section is in the OFF state, the gate bias resistors 134, 135, 144, and 145 connected to the gate electrodes are set to have a highest resistance value.

Abstract: An SPNT switch has at least two operating states and comprises N circuit branches. Each circuit branch comprises a first input/output port connected to a second input/output port via a series active device, and a phase shifting component connected in series with a shunt active device. When the shunt active device is in an on state, the reflection co-efficient due to a path to ground from the series active device via the phase shifting component and the shunt active device is +1. At least one DC terminal controls the state of the active devices, whereby in one of the operating states of the switch, both active devices are in the on state simultaneously, and in another of the operating states, both active devices are in an off state simultaneously.

Abstract: A non-directional coupler including a semiconductor junction in series with a capacitor, the semiconductor junction being formed so that the threshold frequency short of which it behaves as a rectifier is smaller than the coupler's operating frequency.

Abstract: In a circuit for connection of at least two signal sources with at least one signal output, the signal sources are connected with a control unit. The control unit activates or deactivates the signal sources by transmission of control signals. Each signal source is connected with a blocking unit. Each blocking unit is connected with the control unit. The blocking unit can block or enable a connection between the signal source and the signal output, with the connection being automatically enabled when the signal source is activated.

Abstract: A front end module comprises a diplexer, a first duplexer, and a second duplexer. The first duplexer is connected to the diplexer through a first high frequency switch and separates transmission signals and reception signals of the N-CDMA from each other. The second duplexer is connected to the diplexer through a second high frequency switch and separates transmission signals and reception signals of the W-CDMA from each other. Each of the duplexers includes acoustic wave elements. A single multi-layer substrate for integration is used to integrate the components of the front end module. The diplexer is made up of a conductor layer located inside or on the surface of the multi-layer substrate.