Abstract: A resistor has a resistor body of polycrystalline silicon and electric contact regions arranged on and/or in the resistor body, so that a resistor part is formed between the contact regions, which gives the resistor its resistance. The material in the resistor body is doped with for example boron to define its resistance. To give the resistor a good long term stability the resistor part is protected by one or more oxide based blocking layers produced from transition metals. These blocking layers can prevent movable kinds of atoms such as hydrogen from reaching the unsaturated bonds in the polysilicon. Such movable kinds of atoms can for example exist in passivation layers located outermost in an integrated electronic circuit in which the resistor is included. The blocking layers can be produced from layers having 30% titanium and 70% tungsten, which are oxidized using hydrogen peroxide.

Abstract: In thin layer resistors comprising a patch of a layer of resistive material on an insulating substrate and means at spaced apart locations on the patch, the resistive material is formed of 95 to 99.5 wt % of a zero valence metal and between 5 and 0.5 wt % of a dielectric material.

Abstract: A ceramic heater that is used in a toner-fixing system comprising a ceramic heater and a heat-resistant film, that reduces the degree of deformation of the heat-resistant film, that lightens the load applied to the film at the time of revolution, that prevents the fracture of the film, and that enables fixing at a high rate exceeding 24 ppm. A ceramic base material 11 of the ceramic heater attached to a heating cylinder comprises aluminum nitride or silicon nitride. A heating element 12 and current-feeding electrodes are made of silver or silver alloy and are formed on the ceramic base material. In the ceramic heater, at least one part of the face (the fixing face) that contacts the heat-resistant film is curved when viewed from a direction perpendicular to the feeding direction of a copying sheet.

Abstract: A ceramic heater that is used in a toner-fixing system comprising a ceramic heater and a heat-resistant film, that reduces the degree of deformation of the heat-resistant film, that lightens the load applied to the film at the time of revolution, that prevents the fracture of the film, and that enables fixing at a high rate exceeding 24 ppm. A ceramic base material 11 of the ceramic heater attached to a heating cylinder comprises aluminum nitride or silicon nitride. A heating element 12 and current-feeding electrodes are made of heat-resistant metal such as tungsten and molybdenum or heat resistant alloy and are formed on the ceramic base material. In the ceramic heater, at least one part of the face (the fixing face) that contacts the heat-resistant film is curved when viewed from a direction perpendicular to the feeding direction of a copying sheet.

Abstract: A resistor foil, comprised of a copper layer having a first side and a second side. A tiecoat metal layer having a thickness of between 5 Å and 70 Å is disposed on the first side of the copper layer. A first layer of a first resistor metal having a thickness of between 100 Å and 500 Å is disposed on the tiecoat metal layer, and a second layer of a second resistor metal having a thickness of between 100 Å and 500 Å is disposed on the first layer of the first resistor metal. The first resistor metal has a resistance different from the second resistor metal.

Abstract: An electrical-resistant via hole structure used in a carrier is disclosed. The electrical-resistant via hole includes a via hole and electrical-resistant material. The via hole is in the carrier and extends along a first direction. The electrical-resistant material is placed into the via hole and contacts with first and second conductors. The assembly consisting of a first conductor, electrical-resistant material, and second conductor composes a resistor. The electrical-resistant via hole of the invention needs less area and reduces the size of PCBs.

Abstract: A tubular thin film resistance heater including a substrate (10) having an electrically non-conductive surface on which is deposited a thin film electrical conductor (12), such as tin oxide. A pair of electrical terminals (14, 16), preferably bus bars, are electrically connected at spaced apart locations on the conductor (12), such as at longitudinal spaced opposed ends or at circumferentially spaced opposed edges of the conductor (12). The thin film conductor (12) is molecularly bonded to the substrate (10) for durability and efficient heat transfer. A method of forming a tubular thin film resistance heater also is disclosed.

Abstract: There is provided a varistor having high surge resisting capability in spite of its small size and a method of manufacturing the same. The varistor is mainly composed of zinc oxide and contains a composite oxide expressed by the chemical formula Zn2SnO4. It is manufactured using a method wherein zinc oxide and tin oxide are mixed; the mixture is subjected to a thermal process thereafter to obtain a composite oxide expressed by the chemical formula Zn2SnO4; and the composite oxide is combined with the zinc oxide which is the main component and a thermal process is performed to obtain a raw material for the varistor.

Abstract: A thin film resistor (302) for use in inkjet printer heads that has high resistant and low absolute value of TCR.

Abstract: A thin-film resistor that enables a pattern to be simply formed by means of wet etching, that has an excellent resistance temperature characteristic, and that can be easily manufactured, and a method for manufacturing this thin-film resistor, as well as a wiring substrate with this thin-film resistor formed therein. A thin resistor film according to this invention has a structure in which crystal grains deposit in the matrix of amorphous titanium nitride. The thin resistor film is formed on a substrate. The crystal grains includes at least one of crystal titanium nitride and crystal titanium. The thin resistor film can be manufactured using a simple process and can provide a wide range of resistance values with a small tolerance and a temperature coefficient of resistance close to zero.

Abstract: A built-in resistor for cathode-ray tube which comprises an insulating substrate, a resistance layer formed on one main surface of the insulating substrate, a plurality of terminal electrodes mounted on the resistance layer, and a plurality of terminals connected respectively with the terminal electrodes, wherein the plurality of terminals are individually constituted by a base body made of a non-magnetic alloy, and by a surface layer which is formed on the surface of the base body and made of an oxide of the non-magnetic alloy, the plurality of terminals have a relative permeability of not more than 1.005, and the surface layer of each of the terminals is partially provided with an insulating covering layer. The nonmagnetic alloy is a Ni—Cr-based alloy, and the surface layer is formed through an oxidation treatment under a condition where the formation of NiO can be suppressed.

Abstract: A resistive element includes a resistive film disposed on an insulating film, a current collector disposed apart from the resistive film at a given space, and an electrode conductive to the resistive film and the collector respectively. The insulating board is punched to form slits which split the electrode. The slits allow the resistive element to maintain creepage distances between the electrode. The resistive element accommodates downsizing requirement while restraining silver migration for eliminating shorts between the electrodes. As a result, a highly reliable resistive element is obtainable.

Abstract: There is disclosed an electrostatic holding apparatus in which a voltage is applied to an conductive electrode covered with an insulating dielectric layer in order to cause the insulating dielectric layer to electrostatically attract an object. The main component of the insulating dielectric layer is ceramic containing 0.1-30 wt. % of an atomic metal, and the volume resistivity of the metal-containing ceramic at 20° C. is 108-1013 &OHgr;·cm. The metallic element is Mo or W. In the electrostatic holding apparatus, since the volume resistivity of an insulating dielectric layer of an electrostatic attraction portion is decreased, a strong electrostatic force can be generated. Also, there can be maintained the capability of allowing removal of an object at the time of stopping application of voltage. Further, since neither fine cracks nor pores remain in the insulating dielectric layer after sintering, the withstand voltage is high.

Abstract: A component for use in forming a multi-layer printed circuit comprised of a film substrate formed of a first polymeric material. At least one layer of a flash metal is applied to a first side of the film substrate, and at least one layer of copper is applied on the layer of flash metal. A discrete area of an organic molecular semiconductor material is disposed on a second side of the film substrate.

Abstract: The invention relates to a power module with a circuit arrangement provided with active semiconductor components and passive components and with a circuit substrate, whereby at least a portion of the active semiconductor components are soldered onto a DCB substrate and at least a portion of the passive components are printed in thick film technology on at least one ceramic substrate. The upper side of the DCB substrate is structured to form track conductors and connecting surfaces for receiving the active semiconductor components and passive components of the circuit arrangement. On the ceramic substrate, for each passive component, a first print layer is printed in thick film technology and at least one contact surface as additional print layer laterally adjoining the first print layer.

Abstract: A toaster having a base and at least two substantially vertical heating elements defining a cooking space that is open at least at the upper part of the toaster, the heating elements being in the form of transparent glass walls composed of a glass substrate covered, on one of its faces, with a layer of metal oxide or oxides, the layer being connected to an electric supply circuit for supplying heating current. At least two of the glass walls have an upper rim, or lip, the rim or lip being made of a transparent material.

Abstract: A ceramic heater that is used in a toner-fixing system comprising a ceramic heater and a heat-resistant film, that reduces the degree of deformation of the heat-resistant film, that lightens the load applied to the film at the time of revolution, that prevents the fracture of the film, and that enables fixing at a high rate exceeding 24 ppm. A ceramic base material 11 of the ceramic heater attached to a heating cylinder comprises aluminum nitride or silicon nitride. A heating element 12 and current-feeding electrodes are made of silver or silver alloy and are formed on the ceramic base material. In the ceramic heater, at least one part of the face (the fixing face) that contacts the heat-resistant film is curved when viewed from a direction perpendicular to the feeding direction of a copying sheet.

Abstract: A ceramic heater that is used in a toner-fixing system comprising a ceramic heater and a heat-resistant film, that reduces the degree of deformation of the heat-resistant film, that lightens the load applied to the film at the time of revolution, that prevents the fracture of the film, and that enables fixing at a high rate exceeding 24 ppm. A ceramic base material 11 of the ceramic heater attached to a heating cylinder comprises aluminum nitride or silicon nitride. A heating element 12 and current-feeding electrodes are made of heat-resistant metal such as tungsten and molybdenum or heat resistant alloy and are formed on the ceramic base material. In the ceramic heater, at least one part of the face (the fixing face) that contacts the heat-resistant film is curved when viewed from a direction perpendicular to the feeding direction of a copying sheet.

Abstract: A thin-film resistor that enables a pattern to be simply formed by means of wet etching, that has an excellent resistance temperature characteristic, and that can be easily manufactured, and a method for manufacturing this thin-film resistor, as well as a wiring substrate with this thin-film resistor formed therein. A thin resistor film according to this invention has a structure in which crystal grains deposit in the matrix of amorphous titanium nitride. The thin resistor film is formed on a substrate. The crystal grains includes at least one of crystal titanium nitride and crystal titanium. The thin resistor film can be manufactured using a simple process and can provide a wide range of resistance values with a small tolerance and a temperature coefficient of resistance close to zero.

Abstract: A wiring board having an insulating substrate of aluminum oxide ceramics and a surface wiring layer formed on the surface of said insulating substrate, wherein the aluminum oxide ceramics constituting said insulating substrate contains a manganese compound in an amount of from 2.0 to 10.0% by weight in terms of MnO2, and has a relative density of not smaller than 95%, and said surface wiring layer contains copper in an amount of from 10 to 70% by volume and at least one high-melting metal selected from the group consisting of tungsten and molybdenum in an amount of from 30 to 90% by volume, and further contains copper as a matrix, said copper matrix having a diffusion structure in which are diffused the particles of said high-melting metal having an average particle diameter of from 1 to 10 &mgr;m.

Abstract: A method is provided for forming a patterned layer of resistive material in electrical contact with a layer of electrically conducting material. A three-layer structure is formed which comprises a metal conductive layer, an intermediate layer formed of material which is degradable by a chemical etchant, and a layer of resistive material of sufficient porosity such that the chemical etchant for said intermediate layer may seep through the resistive material and chemically degrade said intermediate layer so that the resistive material may be ablated from said conductive layer wherever the intermediate layer is chemically degraded. A patterned photoresist layer is formed on the resistive material layer. The resistive material layer is exposed to the chemical etchant for said intermediate layer so that the etchant seeps through the porous resistive material layer and degrades the intermediate layer. Then, portions of the resistive material layer are ablated away wherever the intermediate layer has been degraded.

Abstract: A tubular thin film resistance heater including a substrate (10) having an electrically non-conductive surface on which is deposited a thin film electrical conductor (12), such as tin oxide. A pair of electrical terminals (14, 16), preferably bus bars, are electrically connected at spaced apart locations on the conductor (12), such as at longitudinal spaced opposed ends or at circumferentially spaced opposed edges of the conductor (12). The thin film conductor (12) is molecularly bonded to the substrate (10) for durability and efficient heat transfer. A method of forming a tubular thin film resistance heater also is disclosed.

Abstract: The invention relates to a chip resistor which is used as a circuit part for various electric apparatuses. The object of the invention is to realize a low resistance and a low TCR, and also high accuracy and high reliability. In order to achieve the object, a chip resistor is configured so as to have: a substrate; a resistance layer which is formed on at least one face of the substrate and which is made of a copper nickel alloy; upper-face electrode layers which make surface contact with the upper faces of both the end portions of the resistance layer; and end-face electrodes which are formed so as to cover the upper-face electrode layers. Since the bonding between the resistance layer and the upper-face electrode layers is conducted by metal-to-metal bonding, particularly, impurities which may affect the Properties do not exist in the interface. As a result, it is possible to realize a chip resistor which is excellent in heat resistance, and which has a low resistance and a low TCR.

Abstract: A resistor has a resistor body of polycrystalline silicon and electric terminals arranged on and/or in the resistor body. A resistor portion is thus formed between the terminals, which gives the resistor its resistance. The material in the resistor body is doped with for example boron. In order to block unsaturated silicon bonds in grain boundaries to a sufficient extent and thereby give the resistor a good long-time stability, fluorine atoms are added to the material. They are added in such a high concentration that all of the otherwise unsaturated bonds are coupled to fluorine atoms. Further, it is provided in the manufacture of the resistor that the concentration is maintained at the originally high value. When ion implanting dopants and fluorine atoms it can be accomplished by performing an annealing after implanting dopants at a high temperature and then a further annealing operation at a low temperature after the subsequent implantation of fluorine.

Abstract: The invention provides a production method capable of forming a thin film resistance element having a thickness and a shape controlled in a high accuracy in a printed circuit board (core material). The production method of a thin film resistance element formed on a printed circuit board, has the steps of forming a thin film resistance layer having a predetermined thickness on the printed circuit board through an insulation layer by a dry process used in producing a semiconductor, forming an electrically conductive layer on the thin resistance layer, and etching the electrically conductive layer selectively so as to make, at least, a pair of electrically conductive pads, resulting in the thin film resistance element having a predetermined value of resistivity between the pair of electrically conductive pads. Thereby, it is possible to form the thin film resistance element having a thickness and a shape controlled in a high accuracy on the printed circuit board (core material).

Abstract: A thin-film resistor that enables a pattern to be simply formed by means of wet etching, that has an excellent resistance temperature characteristic, and that can be easily manufactured, and a method for manufacturing this thin-film resistor, as well as a wiring substrate with this thin-film resistor formed therein. A thin resistor film according to this invention has a structure in which crystal grains deposit in the matrix of amorphous titanium nitride. The thin resistor film is formed on a substrate. The crystal grains includes at least one of crystal titanium nitride and crystal titanium. The thin resistor film can be manufactured using a simple process and can provide a wide range of resistance values with a small tolerance and a temperature coefficient of resistance close to zero.

Abstract: A method for manufacturing varistor by which a varistor having a high plating resistance and a high moisture resistance is manufactured by selectively forming a compact high-resistance layer having a uniform thickness on the surface of a varistor element. In the method, the varistor element (1) is first formed by alternately laminating ceramic sheets (1a) mainly of a zinc oxide and internal electrodes (2) upon one another, and then, Ag electrode paste which becomes external electrodes (3) is applied to both end faces of the element (1). Then, after the element (1) is sintered through heat treatment, the element (1) is buried in SiO2 or a mixture (5) containing SiO2 and the element (1) is heat-treated for 5-10 minutes at 600-950° C. in the air or in an oxygen atmosphere.

Abstract: With a sensor and method, it is possible for platinum resistor elements to be used advantageously as heating elements, temperature sensors, printed circuit traces, or as chemically resistant electron beam sensitive layers. To ensure a long-lasting adhesion of the platinum resistance layer to a dielectric substrate, even during exposure to temperatures which are elevated over ambient temperature and under dry and most atmospheric conditions, a thin adhesion layer of platinum silicide, for example, is deposited between the platinum resistance layer and the dielectric substrate. Resistor elements patterned from the platinum layer can advantageously be used in temperature sensors, mass flow sensors, chemical sensors, gas sensors, or humidity sensors.

Abstract: An electrically heated backlite assembly and method of making same includes a glass panel and an opaque, electrically nonconductive coating bonded to the glass panel. The electrically nonconductive coating has an outer surface with a plurality of first undulations at selected locations. The electrically heated backlite assembly also includes an electrically conductive coating overlying and bonded to the electrically nonconductive coating. The electrically conductive coating has a generally smooth outer surface and an inner surface with a plurality of second undulations complementary to the first undulations at the selected locations. The electrically heated backlite assembly includes a conductor strip attached to the electrically conductive coating at the selected locations and for connection to a source of power to provide power to the electrically conductive coating to heat the glass panel to de-ice and defog the glass panel.

Abstract: A fault current fusing resistor, comprising a substrate on which there is a line of resistive film formed of metal and glass in a conductive film, which line is closely confined by containing and sealing substances to prevent venting of vapor from the line during the fusing caused by an electrical fault condition.

Abstract: A method for manufacturing resistors comprising the steps of forming a top electrode layer on a top face of a substrate, a resistance pattern connected to the top electrode layer, a protective layer covering the resistance pattern, a thin metal film side electrode layer on a side face of the substrate which is electrically connected to the top electrode layer, and a concavity by removing a part of the side electrode layer and substrate.

Abstract: Resistors are formed by selective etching from layered thin film material comprising an insulating substrate, a resistive material which is a mixture of a zero valence metal and a dielectric material, and a layer of conductive material.

Abstract: In thin layer resistors comprising a patch of a layer of resistive material on an insulating substrate and means at spaced apart locations on the patch, the resistive material is formed of 95 to 99.5 wt % of a zero valence metal and between 5 and 0.5 wt % of a dielectric material.

Abstract: A variable resistor uses a carbon fiber-base resistor with a specific distribution of carbon particle sizes. Because the particle size distribution of carbon fiber is approximately equal to the normal distribution and 80% by volume or more carbon fiber is included in the particle size range from 1 to 20 &mgr;m, high conductivity in the fiber length direction of carbon fiber that is served as structural material for improving the wear resistance does not affect the micro-linearity.

Abstract: A conductive polymer device has three or more conductive polymer layers sandwiched between two external electrodes and two or more internal electrodes. The electrodes are staggered to create a first set of electrodes, in contact with a first terminal, alternating with a second set of electrodes in contact with a second terminal.

Abstract: A resistance wiring board having a cavity disposed on an insulated substrate, a resistance disposed in the cavity, a protective film disposed on a top face of the resistance, and electrodes electrically connected at near both ends of the resistance, wherein surfaces of the electrodes and a surface of the protective film are the same level as or lower than a surface of the wiring board. A method for manufacturing a resistance wiring board comprising the steps of forming a green sheet, forming an electrode pattern on the green sheet, forming a dented pattern on the green sheet, firing the green sheet, forming a resistance by filling a resistance material in the dent of the green sheet, and forming a protective film on a top face of the resistance.

Abstract: Thin films of Ti--Cr--Al--O are used as a resistor material. The films are rf sputter deposited from ceramic targets using a reactive working gas mixture of Ar and O.sub.2. Resistivity values from 10.sup.4 to 10.sup.10 Ohm-cm have been measured for Ti--Cr--Al--O film <1 .mu.m thick. The film resistivity can be discretely selected through control of the target composition and the deposition parameters. The application of Ti--Cr--Al--O as a thin film resistor has been found to be thermodynamically stable, unlike other metal-oxide films. The Ti--Cr--Al--O film can be used as a vertical or lateral resistor, for example, as a layer beneath a field emission cathode in a flat panel display; or used to control surface emissivity, for example, as a coating on an insulating material such as vertical wall supports in flat panel displays.

Abstract: A resistive temperature sensor is constituted by an insulating body mainly composed of alumina; and a temperature sensing resistor mainly composed of a conductive material containing a metal silicide. The insulating body and the temperature sensing resistor are laminated and sintered to form a lamination sintered body in which a resistance circuit is formed.

Abstract: A resistor has a resistor body of polycrystalline silicon and electric terminals arranged on and/or in the resistor body. A resistor portion is thus formed between the terminals, which gives the resistor its resistance. The material in the resistor body is doped with for example boron. In order to block unsaturated silicon bonds in grain boundaries to a sufficient extent and thereby give the resistor a good long-time stability, fluorine atoms are added to the material. They are added in such a high concentration that all of the otherwise unsaturated bonds are coupled to fluorine atoms. Further, it is provided in the manufacture of the resistor that the concentration is maintained at the originally high value. When ion implanting dopants and fluorine atoms it can be accomplished by performing an annealing after implanting dopants at a high temperature and then a further annealing operation at a low temperature after the subsequent implantation of fluorine.

Abstract: A substrate for a recording head includes a heat generating resistor for generating thermal energy to eject liquid, and a pair of opposed electrodes which are electrically connected to the heat generating resistor to supply electric signal to that heat generating resistor. A portion of the heat generating resistor interposed between the electrodes constitutes a heat generating portion, and the electrodes have respective ends adjacent to the heat generating resistor, each of which ends has a smooth convex shape. The width of a pattern constituting the heat generating resistor is greater than a width of a pattern constituting the electrodes.

Abstract: A heat-generating resistor comprised essentially of Ru and Ta at the following composition ratios:22 atom percent .ltoreq.Ru.ltoreq.66 atom percent and34 atom percent .ltoreq.Ta.ltoreq.78 atom percent,and an ink jet head which includes said heat-generating resistor are provided.

Abstract: A resistance element, a capacitor and an intermediate electrode are formed on a substrate. The capacitor and the resistance element are connected with the intermediate electrode interposed. Two terminal electrode portions are connected to each other through the intermediate electrode.

Abstract: A description is given of a precision resistor. The resistor comprises a substrate having two connections which are electrically interconnected via a resistance path, said resistance path comprising a first path portion having a positive TCR and a second path portion having a negative TCR. The resistor is characterized in that the resistance material of both path portions is selected so that the resistance values and the absolute TCRs of both path portions are comparable and in that both path portions are trimmed so that the resistor has desired resistance and TCR values. Preferably, the resistance materials used for the path portions consist of an alloy of substantially the same composition on the basis of CuNi or NiCrAl. The invention makes it possible to very accurately and reproducibly mass-produce precision resistors.

Abstract: A resistor comprising a substrate, a pair of first top electrode layers disposed at least on the top face of the substrate, a resistance layer disposed so as to electrically connect with the first top electrode layers, a protective layer disposed so as to cover at least the resistance layer, and a pair of second top electrode layers disposed at least on the top faces of the pair of first top electrode layers. At least one of the pairs of first top electrode layers or second top electrode layers partially extends to the substrate side faces.

Abstract: A thermal head producing method in which dispersion of resistance values of heating resistors in each thermal head and dispersion of the resistance values of the heating resistors per dot unit are made uniform to improve printing quality. A glaze layer is formed on a substrate and a heating resistor composed of a thin film resistor material of a mixed composition of a high melting point metal and an insulating material is formed on the glaze layer. First and second pattern conductors for providing common and separate electrodes are formed on the heating resistor and, after a protective film is formed to cover the first and second pattern conductors and the heating resistor, the heating resistor is heated so as to be a higher temperature than a dot temperature required for a printing operation.

Abstract: In a CRT inner resistor, it is intended to prevent the potential of an electrode from being varied owing to leak current that is caused by electric field concentration on the circumferential portion of the electrode because an insulating substrate is charged with stray electrons. An insulating substrate, and electrodes and a resistive body that are connected to each other are provided. An insulating glass layer is provided on the insulating substrate so as to cover the resistive body. Shield members made of insulating glass are provided along the circumferences of the respective electrodes so as to cover the peripheries of the respective electrodes and the portions outside the peripheries of the respective electrodes.

Abstract: A chip-like network resistor is disclosed which is reduced in variation in resistance of terminal electrodes. A substrate (1) is formed on both ends (3, 5) with a plurality of recesses (7), at each of which a terminal electrode (17) connected to a thick-film electrode (9) is arranged. The terminal electrodes (17) each are constituted of a thin metal film electrode layer (19) and two plated layers (21, 23). The thin metal film electrode layer (19) includes a front surface electrode section (19a) formed on a front surface (1a) of the substrate (1) so as to overlap with the thick-film electrode (9), a side surface electrode section (19b) connected to the front surface electrode section (19a) and arranged so as to entirely cover an inner surface of the recess (7) and a rear surface electrode section (19c) formed on a rear surface (1b) of the substrate (1) and connected to the side surface electrode section (19b).

Abstract: A metal alloy having an intrinsically low TCR, and which preferably comprises a metal oxide and forms part of the resistance material in a quantity of 15-60 vol. %. The best results are achieved with a resistance material which comprises an alloy of CuNi as the metal alloy and SiO.sub.2 as the high-ohmic component. The resistors exhibit a relatively high resistance value as well as a relatively low TCR value.

Abstract: There is provided an ink jet head which includes an electrothermal converting body disposed along a pathway of ink, said electrothermal converting body being provided with a heat generating resistor capable of generating, upon energization, heat energy to be directly applied to ink on a heat acting face whereby discharging said ink, characterized in that said heat generating resistor is composed of a material containing at least Ir and other one specific element at the specific respective composition rates or a material containing at least Ir and other two specific elements at the specific respective composition rates, said heat generating resistor constituted by any of said materials being capable of exhibiting a sufficient durability even in the case of driving the ink jet head with a relatively long drive pulse duration.

Abstract: A laminated chip varistor has a varistor element including at least one varistor layer and at least two inner electrodes which are laminated alternatively, and outer most layers comprising the same material as the varistor layer; and terminal electrodes electrically connected to the inner electrodes each formed at each of the both edge portions of the varistor element; wherein a surface roughness (R) of the varistor element is in the range of 0.60 to 0.90 .mu.m.