Abstract: A thin film resistor with an insulating layer disposed between a substrate material and a resistor material is disclosed. Also, disclosed is a technique for fabricating this thin film resistor. In accordance with the preferred embodiment, the thin film resistor employs an insulating layer of silicon nitride with a thickness of 2000 .ANG.. The insulating layer prevents the resistor layer from diffusing into the substrate material which, in turn, significantly reduces variations in the resistor value during accelerated life testing. Compared to thin film resistors with a resistor layer evaporated directly upon a substrate material, reliability is increased from a few hundred hours up to thousands of hours. Also, the maximum current handling capability is increased by greater than one order of magnitude, which results in a thin film resistor which requires less surface area of a wafer.

Abstract: A submicron resistor having negligible parasitic capacitance includes an isolated released beam carried on a single crystal silicon wafer. The resistor is fabricated by defining a resistor region in the substrate, doping the region to produce the desired resistivity, and etching around the region to produce a resistive island. The island is then isolated from the substrate by oxidation, and is released by removing the oxide to produce an isolated, released resistor beam.

Abstract: This invention relates to a voltage pulse controlled variable resistor in which at least 2 leads are placed in direct contact with a material containing silica derived from hydrogen silsesquioxane. The resistor is formed by depositing a silica film derived from hydrogen silsesquioxane resin between at least two electrodes. The resistance of the component is varied by applying voltage pulses to the leads.

Abstract: A layer of ceramic material such as alumina is plasma-deposited on a sheet member such as molybdenum or a composite laminate of molybdenum and graphite or other material of low thermal expansion to form a circuit unit substrate having a thick, adherent, electrically-insulating coating on a light, rigid and thermally-conducting base. Thick and thin film materials are deposited and fired on the insulating coating to provide conductors, insulators or resistors or the like in a circuit unit. The materials of the sheet member and of the insulating coating are selected to have matching thermal expansion coefficients so that the substrate remains flat and free of bowing during the firing of the thick and thin film materials. The plasma-deposited electrically-insulating layer is sealed to prevent moisture absorption during use.

Abstract: A thick film resistive element superior in moisture resistance characteristic is provided, which includes a pair of film-like conductors formed on an insulating substrate, a film-like resistor formed on the substrate so as to be partially laminated on the electrode portions of the pair of conductors thereby covering the surfaces of the electrode portions, and a first covering member formed of a material containing a crystal glass as a main ingredient thereof which covers the other portions of the pair of conductors than said electrode portions. As a result, there does not exist such an area that is covered with a porous amorphous glass film only, so that even if a protection film of an organic resin is not provided, there is no possibility that the moisture in the application environment affects on the conductors to degrade the insulation resistance therebetween.

Abstract: Temperature sensors or temperature sensor arrangements made from glass ceramic and bonding film resistors, suitable especially for control and limitation of output in glass ceramic cooking areas, are distinguished in that thin- and/or thick-film resistors are baked on supports of glass ceramic, for example, in the area of the cooking zone of a glass ceramic cooking surface, and one or more glass ceramic resistances are delimited and bonded there, and the film resistors form parallel and/or iterative circuits with the glass ceramic resistances. By suitable selection of the dimensions as well as the surface resistances and temperature coefficients of the bonding film resistors and the type of sensor circuit (parallel and/or iterative circuit), the temperature resistance characteristic of a sensor circuit can be varied within wide limits, e.g., the temperature area of use of a glass ceramic sensor can be considerably expanded toward low temperatures.

Abstract: An apparatus and method by which a flat film-type resistor is intentionally caused to thermal-shock fracture in response to a predetermined high-voltage overload condition. A stressed spring wire is mounted on such film-type resistor and connected in circuit with it. A predetermined solder and temperature gradient are employed to hold the spring wire in bent condition until the solder melts, whereupon the spring flexes and the circuit breaks. Heatsink portions are provided in the circuit board for such resistor, and receive terminal pins thereof.

Abstract: A temperature sensor includes a ceramic layered product having a multilayer structure formed of a plurality of ceramic sheets, a plurality of resistive patterns, containing copper or nickel, formed on major surfaces of the plurality of ceramic sheets respectively, a conductive path passing through the ceramic sheets for series-connecting the plurality of resistive patterns with each other, and respective terminals connected to both ends of the series-connected plurality of resistive patterns. The ceramic sheets being formed of an unreducible ceramic material prepared from a TiO.sub.2.BaO.CaO.ZrO.sub.2 compound.

Abstract: A semiconductor processing method of forming a resistor device includes, a) providing a layer of conductively doped polysilicon atop a substrate to a selected thickness, the layer of polysilicon having an upper surface and a base, the layer of polysilicon having grain boundaries therewithin which extend from the upper surface to the base and define polysilicon grains; b) oxidizing the polysilicon layer at a temperature from about 850.degree. C. to about 1050.degree. C. for a selected period of time to form SiO.sub.x within the polysilicon layer along the grain boundaries and down to the base to separate individual grains of polysilicon within the layer; and c) patterning the oxidized polysilicon layer to form a resistor device within an integrated circuit.

Abstract: A multilayer varistor has interleaved layers of ceramic material and electrode material. Each electrode layer is sandwiched between two ceramic layers. The ceramic material includes zinc oxide, ceramic structure influencing additives selected from the group consisting of bismuth oxide, boron oxide, chromium oxide, cobalt oxide, manganese oxide and tin oxide, and a grain growth influencing additive selected from the group consisting of antimony oxide, silicon dioxide and titanium dioxide.

Abstract: A thin-film thermistor element which has an electrically insulating substrate having first and second surfaces opposite to each other and also having a pair of through-holes defined therein so as to extend completely across the thickness thereof, and a pair of electrode films each including a body portion of large surface area and a generally comb-shaped portion continued outwardly from the body portion. The electrode films are formed by the use of a firing process on the first surface of the substrate with the respective comb-shaped portions thereof confronting with each other. First and second electroconductive films are also formed on respective surrounding wall faces defining the corresponding through-holes in the substrate in electrically connected relationship with the body portions of the associated electrode films. A temperature sensitive resistance film is formed by the use of a high frequency sputtering process on the first surface of the substrate so as to overlay the electrode films.

Abstract: An electrical external resistor with a plate-like, electrical insulating carrier element and a flat resistance element arranged on the upper side of the carrier element. The carrier element has several films forming a closed coating and varying in their electrical conductivity. The films arranged on the upper side and on the lower side of the carrier element consist of cermet, and the film covering the edge area of the carrier element consists of an electrically insulating material. By means of springs or a pressure distribution plate, the resistance element is pressed against the upper cermet film of the carrier element. The interior space of the housing is filled with a casting compound made of addition cross-linking two-component silicon caoutchouc (rubber). The electrical external resistance is discharge-free.

Abstract: A temperature sensor includes a ceramic layered product having a multilayer structure formed of a plurality of ceramic sheets containing an unreducible ceramic material, a plurality of resistive patterns, containing copper or nickel, formed on major surfaces of the plurality of ceramic sheets respectively, a conductive path passing through the ceramic sheets for series-connecting the plurality of resistive patterns with each other, and respective terminals connected to both ends of the series-connected plurality of resistive patterns.

Abstract: An end terminated high power chip resistor-printed circuit board assembly (9) suitable for use in applications requiring miniature surface mount resistors capable of high power dissipation. An end terminated high power chip resistor (8) is constructed by coating a portion of the bottom of an end terminated chip resistor with a conductive plate (12). The end terminated high power chip resistor (8) is mounted to a printed circuit board having at least one via (23) lined with metal (20) wherein the conductive plate (12) is positioned above the via (23) lined with metal (20). A heat sink (16) is mounted to the printed circuit board opposite to the side to which the end terminated high power chip resistor (8) is mounted and is in contact with the metal (20) lining via (23).

Abstract: Via resistor structures in a hybrid multilayer circuit having a plurality of insulating layers. One via resistor structure includes a plurality of resistive via fills in vias in respective adjacent insulating layers, a plurality of conductive elements for electrically contacting predetermined tops and bottoms of the resistive via fills, and conductive via fills for providing external electrical connection to selected ones of the conductive elements at locations on the outside the unitized multilayer circuit structure. A further via resistor structure includes a resistive via fill formed in a via in one of the insulating layers, and one or more thermally conductive via fills for thermally conducting heat from said resistive via fill to the outside of the unitized multilayer circuit structure.

Abstract: A printed circuit board includes both high and low resistive value thick film resistors interconnected by a copper film. To lower the contact resistance to the thick film resistors of high value, each is provided at its ends with a termination of a composition similar to that used for the low value resistors. This provides a relatively low resistance contact region which overcomes the difficulty that a copper thick film conductor has in making electrical connections to compositions generally used for making high value thick film resistors. The composition of high and low resistivities are adapted to permit firing of both compositions in a single firing step.

Abstract: An artificial resistive card which prevents scattering due to diffraction, and which forms impedance transitions from ground planes to antenna apertures or to free spaces, incorporates resistive and conductive layers formed on a substrate. The conductive layer is etched away, either partially or entirely, using integrated circuit technology in order to vary the resistivity of the resistive card. Portions of the resistive layer may also be etched away to expose the underlaying substrate and increase the resistivity of the resistive card. The size and dimension of the resistive and conductive pattern left after etching determines the value of the resistivity and is easily and accurately reproduced.

Abstract: A resistor film formed by applying onto a substrate a homogeneous mixture solution of metal organic compounds including metals selected from the element group of silicon (Si), bismuth (Bi), lead (Pb), aluminum (Al), zirconium (Zr), calcium (Ca), tin (Sn), boron (B), titanium (Ti), barium (Ba), and the like, and a metal selected from the group of iridium (Ir) and ruthenium (Ru) and burning the homogeneous mixture solution. The homogeneous mixture solution is burned at a temperature of 700.degree. C. or more in an atmosphere of oxygen.

Abstract: A high temperature low density operating element includes a porous high temperature operating element film formed into a predetermined configuration and disposed on one surface of an insulating member with good heat conductivity, a resistive film with a high melting point and good heat conductivity having a higher density than the high temperature operating element film, formed into a predetermined configuration on a second surface of the insulating member with good heat conductivity, a lead wire connected to the resistive film, an insulating protective film disposed on the insulating member covering the resistive film.

Abstract: A liquid jet head comprises, an electrothermal transducer having a heat-generating resistor formed using an amorphous alloy containing at least one selected from the group consisting of Ti, Zn, Hf, Nb, Ta and W as well as Fe, Ni and Cr, and a pair of electrodes connected electrically to said heat-generating resistor, a support for supporting said electrothermal transducer and a liquid path formed on said support corresponding to the heat generating portion of said electrothermal transducer formed between said pair of electrodes and communicated to a discharge opening for discharging ink.

Abstract: A resistor device includes a thick-film resistor which includes a mixture of electrical conductive material and glass, and which has the electrical conductive material at a surface portion exposed; and electrodes which are deposited on the thick-film resistor to be connected to the exposed electrical conductive material.

Abstract: A high-precision and high-stability resistor element, which exhibits zero, or close to zero, resistance deviation during time and in given temperature and power ranges, includes a bonded sandwich of several substrates of inorganic insulating material having a substantially zero coefficient of thermal expansion with one or more R (Resistance) and TCR (Temperature Coefficient of Resistance) trimmed resistive metal foil patterns which can be retrimmed in two directions during periodic verifications.

Abstract: A dual function circuit board substrate has a layer or sheet of ultrathin metal of relatively high electrical resistivity having a selected sheet resistivity characteristic bonded to a thin layer or sheet of metal of relatively high electrical conductivity. The layer of high electrical resistivity material is adhered to one side of a layer of organic electrically insulating material, and a heat-sink metal layer is adhered to an opposite side of the organic insulating layer to withdraw heat from the layer of high electrical resistivity material. The thin layers of high electrical resisivity and conductivity materials are selectively etched from the organic layer material to form a select circuit, and the layer of high electrical conductivity material is selectively etched from portions of the circuit to form one or more resistor elements having selected electrical resistances in the circuit.

Abstract: A low-resistance nickel-chromium-based thin film resistor and method for forming same. A nickel-chromium alloy film is coated on at least one side with a layer of gold, the resulting gold-coated alloy film is heated at a temperature and for a time effective to cause diffusion of sufficient gold into the nickel-chromium film to lower its resistance to a desired value, and the gold layer is then removed, to leave a nickel-chromium-gold composite film resistor.

Abstract: A resistor located above the semiconductive substrate of an integrated circuit chip can be made smaller than prior art resistors because no area is allocated for resistor contacts. During manufacture, a resistive strip having the width of the intended resistor is formed. A photoresist mask protects the top and sides of the resistive strip where the resistor is located, and etching exposes the ends but not the top and sides of the resistor. Contact to the resistor occurs at the upwardly extending (usually near vertical) end surfaces of the resistor.

Abstract: A microwave attenuator is constructed on an insulative substrate which supports a resistive region, input/output electrodes and shunt electrodes. The shunt electrodes are preferably constructed using trapezoidally shaped portions on the face of the insulative substrate, on which the resistive region is formed, to increase the width of the electrodes. The shunt electrodes extend down to a ground plane on the face of the insulative substrate opposite the face on which the resistive region is formed. In one embodiment, the shunt electrodes form a wide strip on the outside of a rectangular substrate. In another embodiment, the shunt electrodes extend from the resistive region through holes positioned close to the resistive region.

Abstract: A resistor (10) includes a resistive filling (28) formed within a trench (12) and separated therefrom by an insulating layer (26). Resistive filling (28) is of the same type of semiconductor material as that of second layer (22), but of an opposite extreme of dopant concentration. A head region (32) may be formed below interface (30) within second layer (22) to more clearly delineate the edge of resistive filling (28) from second layer (22). Where resistive filling (28) is of a low dopant concentration, low resistance contact region (34) is formed of a high dopant concentration in order to provide a minimum resistance contact to resistive filling (28).

Abstract: The marginal adhesion of platinum to silicon nitride is a serious issue in the fabrication of microbridge mass air flow sensors. High temperature stabilization anneals (500.degree.-1000.degree. C.) are necessary to develop the properties and stability necessary for effective device operation. However, the annealing process results in a significant reduction in the already poor platinum/silicon nitride adhesion. Annealing at relatively high temperatures leads to the development of numerous structural defects and the production of non-uniform and variable sensor resistance values. The use of a thin metal oxide adhesion Layvr, approximately 20 To 100 angstromw in thickness is very effective in maintaining platinum adhesion to silicon nitride, and through the high temperature anneal sequence.

Abstract: A material which exhibits different electrical resistivity in mutually perpendicular directions is formed by providing a base member of one metal and covering a surface of the base member with a second metal of a different composition. Thereafter, multiple passes are made with a high energy beam over the surface of the second metal to form a plurality of alloyed zones in the base metal with the resistivity of the alloyed zones being different than that of the adjacent base metal.A rotor for a dynamoelectric machine fabricated by such methods imparts a preferred direction to current flow to thereby eliminate large undesirable eddy currents and by tailoring the pattern of the higher resistivity zones, a machine may be provided which produces a self-compensating flux to minimize undesirable flux leakage common in such machines.

Abstract: A chip resistor comprising a cuboid resistor body of a ceramic material and solderable, metal, current-supply strips at a first pair of opposing side faces of the resistor body, can readily and accurately be manufactured in that a second pair of opposing side faces of the resistor body is covered completely with electrically insulating layers and in that the metal strips around the edges of the resistor body in such a way that the electrically insulating layers are partly covered by the metal strips.

Abstract: An electrical heater including a semi-conductor pattern (e.g., colloidal graphite ink) printed on a substrate. A conductive ink (e.g., a silver ink) is deposited on the semi-conductor pattern. The conductive ink migrates into the semi-conductor material, provides a superior electrical contact between the conductor (e.g., the silver ink) and the underlying semi-conductor material (e.g., the semi-conductor graphite ink), and essentially eliminates interface resistance. In some embodiments, the semi-conductor pattern is printed on one side of a woven cloth substrate and the conductive ink is printed on the other side.

Abstract: A heat-generating resistor having a functional thin film comprising an amorphous material containing halogen atoms in a matrix of carbon atoms formed on a substrate.

Abstract: A new and improved thermal ink jet printhead and fabrication process therefor are described. In one embodiment of this invention, heater resistors are formed on one area of an insulating substrate and relative large area electrical contacts are formed on an adjacent area of the insulating substrate. A barrier layer is formed over the conductive trace pattern defining the heater resistors on the one area, and a small via in this layer provides an electrical path between the large area electrical contacts and the conductive trace pattern, and thus provides a current drive path for the heater resistors. The small via provides minimum exposure of the barrier sidewall area and area of the conductive trace pattern and thus improves device reliability and fabrication yields and also improves electrical contact to the printhead.

Abstract: A liquid jet recording head such as an ink jet recording head has liquid passages having liquid outlets through which a recording liquid is discharged in the form of jet of droplet, and electro-thermal transducers for generating heat which produce energy for discharging the liquid in response to inputted electric signals. The electro-thermal transducer has a heat-generating resistance layer which is made of an amorphous material containing halogen atoms and hydrogen atoms in a matrix of carbon atoms. Disclosed also is a recording system incorporating this recording head. The amorphous material can further contain silicon atoms and/or germanium atoms.

Abstract: In a liquid injection recording system wherein an electrical signal is input to an electro-thermal conversion element to cause it to generate heat and produce bubbles in liquid and the liquid is injected by the action of the bubbles, a substance whose electrical resistance is varied by phase transition is used for a portion of the electro-thermal conversion element and harmonious recording is effected by the utilization of the phase transition characteristic of the substance.

Abstract: A standard thin film circuit containing Ta.sub.2 N (100 ohms/square) resirs is fabricated by depositing on a dielectric substrate successive layers of Ta.sub.2 N, Ti and Pd, with a gold layer to provide conductors. The addition of a few simple photoprocessing steps to the standeard TFN manufacturing process enables the formation of Ta.sub.2 N+Ti (10 ohms/square) and Ta.sub.2 N+Ti+Pd (1 ohm/square) resistors in the same otherwise standard thin film circuit structure.

Abstract: A technique is disclosed for trimming resistors and other passive circuit components buried in hybrid multilayer circuit structures. For example, resistors (13) are formed between two dielectric layers (11, 19) of a hybrid multilayer circuit structure (10). The multilayer circuit structure with the buried resistors is appropriately processed to provide a fired multilayer circuit structure. Trimming of the buried resistors is accomplished with a laser beam that cuts through dielectric material of the fired circuit structure to selectively remove part of the resistive material of the buried resistors. The values of the buried resistors may be tested with conductive elements (15, 17) that are conductively coupled to the buried resistors. The disclosed technique also contemplates the trimming of other buried passive circuit components such as capacitors, and further contemplates the use of other trimming methods such as abrasive, air jet, or water jet trimming.

Abstract: The disclosure relates to integrated circuit resistors and matched resistor pairs wherein each resistor is split into plural segments, each segment having a separate field plate thereover, each segment having the field plate associated therewith connected to the non-common node thereof. In the case of the matched resistor pair, the interconnections between the segment of each resistor overlap. The segments are preferably substantially rectangular in shape with the major axes of all segments parallel to each other.

Abstract: A heat generating resistor having a functional thin film comprising an amorphous material containing halogen atoms and hydrogen atoms non-uniformly distributed in a matrix of carbon atoms formed on a substrate. Optionally, the thin film also contains silicon and/or germanium, and a substance for controlling the electroconductivity of the thin film. The optional ingredients are also non-uniformly distributed within the thin film.

Abstract: A chip resistor having a value ranging from 10 Ohm to 100 kOhm and having a low temperature coefficient a low noise level and a high stability. The resistor is manufactured by means of the thin-fil technique. For this purpose, an NiCrAl-resistance layer is applied to one side of a flat ceramic support, and contact strips of Ni or an Ni-alloy, possibly preceded by an intermediate layer, are provided at two ends of the said support. An insulating lacquer layer is then applied to the resistance layer and partly overlaps the contact strips. The solderable supply strips are provided on the exposed metal portions.

Abstract: A resistive element is formed on a printed circuit board using only printed circuit board fabrication techniques. A substrate having a bi-metallic cladding on one side of the substrate and a conductive metallic cladding on an opposing side of the substrate is used. A predetermined trace pattern is formed in the metallic cladding. Resistive elements are formed in the bi-metallic cladding opposing their desired locations in the trace pattern. The bi-metallic cladding consists of a resistive layer between the substrate and a second conductive layer. Tabs are etched in the second conductive layer, then resistors, which couple various tabs together, are etched in the resistive layer. Plated holes connect the tabs to desired locations in the trace pattern located on the opposing side of the substrate.

Abstract: The variable resistance speed control switch for a power tool has a wiper which slides over a resistor which has a non-linear resistance curve matched to the motor. The resistor is made by thick film technology and has a ceramic substrate covered by 950.degree. C. glass and fired to give the substate a glass smooth surface. Then a 100K ohm ink is applied in a pattern designed to give a non-linear resistance curve tailored to the performance of the motor. A resistive termination is provided to diffuse the power concentation under the stationary contact. A 1 meg ohm ink covers the 100K layer and part of the terminaton. The 1 meg ink contains a lot a glass which fuses and flows out when fired. The 1 meg ink will flow out to the same glass smooth condition as the glass bottom layer. The wipers are not subject to much abrasion or wear.

Abstract: An integrated circuit device having a lower layer electrode and an upper layer electrode disposed by way of an inter-layer insulation layer on an insulation substrate, wherein the pattern for disposing the lower layer electrode and the pattern for disposing the upper layer electrode are partially or entirely made substantially identical with each other. A method of manufacturing a thermal head for use in heat-sensitive recording wherein a glaze layer is disposed on an insulation substrate, a lower layer electrode of a common electrode is deposited thereover, over the lower layer electrode an insulation layer made of silicon nitride and/or silicon oxide is coated by way of plasma reaction coating and a heat generating layer and an upper layer electrode faced with a gap to individual electrodes are deposited.

Abstract: A compositionally modulated multilayer thin film material system for use as a resistive material in metal film resistors wherein at least two different metallic compositions having good resistive properties are deposited alternately in thin film layers on a substrate, the resulting film having improved TCR & TCR Slope characteristics.

Abstract: A resistor is provided which comprises an insulation substrate, a resistive layer prepared from inorganic materials and printed on the insulation substrate, and an insulation layer prepared from borosilicate lead glass and overcoated on the resistive layer. The insulation layer contains an oxide of at least one transition metal selected from the group consisting of iron, nickel, chromium, cobalt, zinc, copper, zirconium, and cadmium. In the course of operation, the resistor of the present invention exhibits no changes in its resistance, irrespective of the length of time it may be operated.

Abstract: A first layer of titanium or tin is vapor deposited upon opposing major surfaces on the ceramic sensor. A second layer consisting of platinum, palladium or ruthenium is deposited over the first layer. The structure is then preferably annealed in air in order to crystallize the external layer to roughen the exterior surface and enhance adhesion. Lead wires, preferably made of Nichrome, are attached to the opposing surfaces by applying a conductive paste to the wire and surface functions, and firing the structure. The conductive paste provides a relatively low resistance, strong, mechanical bond between the lead wires and the roughened external surfaces of the structure. The first layer facilitates bonding of the second layer to the ceramic. The first and second layers cooperate to protect the ceramic from the potentially harmful glass frit contained in the conductive paste.

Abstract: An electrical resistor having a resistance layer 4 of a cermet material applied to a support 1 as well as contact layers 5 associated with said resistance layer 4, the resistor being subjected to heat treatment. A metallic, electrically non-conductive layer 3 is arranged between support 1 and resistance layer 4.

Abstract: A temperature detector having a semiconductor layer which is a p-type or n-type semiconductor doped by addition of an impurity. The semi- semiconductor is completely amorphous, or substantially amorphous with the inclusion of microcrystals. The temperature detector has good sensitivity at a temperature of not more than 100 K, and has good linearity of the change of resistivity to the change of temperature over a wide range of temperature.

Abstract: An electrical heating device comprises a substrate, a pair of parallel, spaced apart elongated conductors extending longitudinally of the substrate, and a semi-conductor pattern carried on the substrate and electrically connected to and extending between the conductors. The semi-conductor pattern produces a thermal image for an infrared target. In some embodiments, the thermal image is irregular or circular in shape and the semi-conductor pattern includes a plurality of transversely-spaced bars having relatively wide portions outside, and relatively thin portions within, the area producing the thermal image.

Abstract: A variable resistor for use in vehicles and electric apparatus having a resistive body whose resistance value is hardly affected by abrasion. The resistive body is composed of a lower resistive layer formed on the surface of a substrate and an upper resistive layer formed on said lower resistive layer, wherein said upper resistive layer has 2 to 500 times greater value of volume resistivity compared with said lower resistive layer.