Abstract: A semiconductor apparatus includes a semiconductor device that performs signal processing, a driving control unit that controls drive of the semiconductor device, and a lifetime obtaining unit that obtains remaining lifetime information that represents a remaining lifetime of the semiconductor device. In a case where the remaining lifetime information represents a first length, the driving control unit drives the semiconductor device in a first condition. In a case where the remaining lifetime information represents a second length shorter than the first length, the driving control unit drives the semiconductor device in a second condition in which throughput of the signal processing is lower than that in a case where the semiconductor device is driven in the first condition, and the remaining lifetime of the semiconductor device is longer than that in the case where the semiconductor device is driven in the first condition.

Abstract: Analog power savings is achieved by pre-charging only those pixels of a sensor array that are needed as determined responsive to any one of a power configuration, image size, image position of interest, desired/selected frame rate, desired/selected resolution, etc. To that end, the solution presented herein selects one or more sensor segments, each comprising a subset of pixels of the sensor array, and only pre-charges the pixels in the selected segment(s). In so doing, the solution presented herein provides a power savings proportional to the number of uncharged pixel circuits.

Abstract: In some examples, an apparatus comprises: an array of pixel cells, each pixel cell of the array of pixel cells configured to output a voltage; first analog-to-digital converters (ADCs), each first ADC being associated with a pixel cell or a block of pixel cells; second ADCs, each second ADC being associated with a column of pixel cells of the array of pixel cells; and a controller configured to: in a first mode, enable at least a subset of the first ADCs to perform a quantization operation of the voltages output by at least a subset of the pixel cells in parallel to generate a first image frame; and in a second mode, enable at least a subset of the second ADCs to perform quantization operations sequentially of the voltages output by pixel cells within at least a subset of the columns of pixel cells to generate a second image frame.

Abstract: In an embodiment, a method of reducing resistance-capacitance delay along photodiode transfer lines of an image sensor includes forking a plurality of photodiode transfer lines each into a plurality of sublines coupled together and to a first decoder-driver at a first end of each subline; and distributing selection transistors of a plurality of multiple-photodiode cells among the plurality of sublines. In embodiments, the sublines may be recombined at a second end of the sublines and driven by a second decoder-driver at the second end.

Abstract: A color display device comprises an array of a plurality of sub-pixels including a red sub-pixel, a blue sub-pixel, a first green sub-pixel and a second green sub-pixel. The first green sub-pixel and the second green sub-pixel are smaller than that of the red sub-pixel or the blue sub-pixel. The two adjacent first green sub-pixels are arranged in a first direction, the two adjacent second green sub-pixels are arranged in the first direction. The blue sub-pixel is directly adjacent to the red sub-pixel in a second direction; the blue sub-pixel is directly adjacent to the two first green sub-pixels and the two second green sub-pixels.

Abstract: An image sensor and pixel circuit therefor includes a plurality of photoelectric conversion devices, a zero-biased multiplexer connected to the plurality of photoelectric conversion devices, an amplifier including a first input terminal connected to the zero-biased multiplexer, and an output terminal, a capacitor disposed between the first input terminal and the output terminal, and a reset switch disposed between the first input terminal and the output terminal in parallel with the capacitor, the reset switch including a body terminal connected to a common reference voltage.

Abstract: The fingerprint sensing device that includes a first analog front end (AFE) circuit, a compensation circuit, a correction circuit and an output circuit is introduced. The AFE circuit generates a first image signal according to the fingerprint data read from the plurality of rows of the fingerprint sensor. The correction circuit receives a first output digital code that is generated by reading a predetermined row among the plurality of rows of the fingerprint sensor, and calculates a brightness correction value and a relative illumination (RI) correction value according to the first output digital code. The compensation circuit modifies the first image signal according to the brightness correction value and the RI correction value to generate a second image signal. The output circuit is configured to generate a second output digital code according to the second image signal.

Abstract: Provided is a solid-state imaging device including a pixel array in which a plurality of pixels is two-dimensionally arrayed in a row direction and a column direction, and a control unit that sets a range to output pixel signals of the plurality of pixels in the pixel array to each of the row direction and the column direction. The solid-state imaging device further includes a vertical scanning unit that outputs the pixel signals of the plurality of pixels in the range in the column direction set by the control unit, for each row and in the column direction, and a column A/D converter that converts the pixel signals of the plurality of pixels in the range in the row direction set by the control unit from analog signals into digital signals, for each column and in the row direction.

Abstract: A color display device comprises an array of a plurality of sub-pixels including a red sub-pixel, a blue sub-pixel, a first green sub-pixel and a second green sub-pixel. The first green sub-pixel and the second green sub-pixel are smaller than that of the red sub-pixel or the blue sub-pixel. The two adjacent first green sub-pixels are arranged in a first direction, the two adjacent second green sub-pixels are arranged in the first direction. The blue sub-pixel is directly adjacent to the red sub-pixel in a second direction; the blue sub-pixel is directly adjacent to the two first green sub-pixels and the two second green sub-pixels.

Abstract: Disclosed is a solid-state imaging device including a plurality of pixels and a plurality of on-chip lenses. The plurality of pixels are arranged in a matrix pattern. Each of the pixels has a photoelectric conversion portion configured to photoelectrically convert light incident from a rear surface side of a semiconductor substrate. The plurality of on-chip lenses are arranged for every other pixel. The on-chip lenses are larger in size than the pixels. Each of color filters at the pixels where the on-chip lenses are present has a cross-sectional shape whose upper side close to the on-chip lens is the same in width as the on-chip lens and whose lower side close to the photoelectric conversion portion is shorter than the upper side.

Abstract: Provided is a processing apparatus including a processing unit that is connectable to a data bus, and performs output control on respective images captured by a plurality of image sensors connected to the data bus during a predetermined period of time. A timing of output of the image performed by each of the plurality of image sensors is changed by the output control.

Abstract: A sensor chip includes: a pixel array unit that has a rectangular-shaped area in which a plurality of sensor elements are arranged in an array pattern; and a global control circuit, in which driving elements simultaneously driving the sensor elements are arranged in one direction, and each of the driving elements is connected to a control line disposed for each one column of the sensor elements, that is arranged to have a longitudinal direction to be along a long side of the pixel array unit. For example, the present technology can be applied to ToF sensor.

Abstract: Presence or absence of a photon is accurately detected in an image sensor with a simple configuration. A pixel circuit generates as an input voltage a signal voltage by photoelectrically converting light when the light is incident, and generates as the input voltage a predetermined reset voltage when light is not incident. A capacitor retains the predetermined reset voltage as a retained voltage. An amplification comparator amplifies a voltage difference between the input voltage and the retained voltage. A detection comparator outputs a result of determining whether or not the amplified voltage difference is higher than a predetermined value, as a detection signal indicating detected presence or absence of light incidence.

Abstract: Embodiments of the present disclosure describe removing seams and voids in metal interconnects and associated techniques and configurations. In one embodiment, a method includes conformally depositing a metal into a recess disposed in a dielectric material to form an interconnect, wherein conformally depositing the metal creates a seam or void in the deposited metal within or directly adjacent to the recess and heating the metal in the presence of a reactive gas to remove the seam or void, wherein the metal has a melting point that is greater than a melting point of copper. Other embodiments may be described and/or claimed.

Abstract: In some embodiments, a method includes receiving at a plurality of digital image sensor arrays a plurality of respective portions of visible incoming light arriving at a camera module. In some embodiments, the method further includes calculating positions of a plurality of corresponding apparent features in each of the respective portions of visible light. In some embodiments, the method further includes identifying misalignments of the plurality of digital image sensor arrays based on comparison of respective positions of ones of the corresponding apparent features in each of the respective portions of visible light. In some embodiments, the method further includes calculating respective contributions of the respective portions to the combined image data structure based at least in part on the misalignments. In some embodiments, the method further includes generating a combined image data structure from the plurality of respective portions.

Abstract: Techniques relating to buffer circuits. In one embodiment, a circuit includes a first transistor configured as a source follower and a feed-forward path coupled to the gate terminal of the first transistor and the drain terminal of the first transistor. In this embodiment, the feed-forward path includes circuitry configured to decouple the feed-forward path from a DC component of an input signal to the gate terminal of the first transistor. In this embodiment, the circuitry is configured to reduce a drain-source voltage of the first transistor based on the input signal. In some embodiment, the feed-forward path includes a second transistor configured as a source follower and the source terminal of the second transistor is coupled to the drain terminal of the first transistor. In various embodiments, reducing the drain-source voltage may improve linearity of the first transistor.

Abstract: It is disclosed that, as an embodiment, a test circuit includes a test signal supply unit configured to supply a test signal via a signal line to signal receiving units provided in a plurality of columns, wherein the test signal supply unit is a voltage buffer or a current buffer, and the test circuit has a plurality of test signal supply units and a plurality of signal lines, and wherein at least one test signal supply unit is electrically connected to one signal line different from a signal line to which another test signal supply unit is electrically connected.

Abstract: An output impedance of a drive unit configured to drive a drive line is set to be varied during a period in which a drive pulse for setting each transfer transistor to be in a conductive state is supplied and during a period in which a drive pulse for setting each transfer transistor to be in a non-conductive state is supplied.

Abstract: The present invention provides a photoelectric conversion apparatus capable of preventing dark current noise due to a leakage current of a transistor and improving the signal-to-noise ratio. A photoelectric conversion apparatus includes a pixel which in turn includes a photoelectric conversion element adapted to convert light into an electric charge, buffers whose input terminals are connected to an output terminal of the photoelectric conversion element and which buffer a voltage corresponding to the electric charge of the photoelectric conversion element, a capacitor whose first electrode is connected to an output terminal of the photoelectric conversion element, a first switch connected between a second electrode of the capacitor and output terminals of the buffers, and a second switch connected between the second electrode of the capacitor and a fixed voltage node.

Abstract: A system for correcting a column line failure in an imager includes a pixel selection circuit configured to receive three adjacent pixel output signals, P(n?1), P(n) and P(n+1), respectively, from three adjacent column lines, (n?1)th column line, nth column line and (n+1)th column line. The (n?1)th column line is disposed left of an nth column line, and the (n+1)th column line is disposed right of the nth column line. A generator for generating a bit pattern is also included for indicating a column line failure in the three adjacent column lines. The pixel selection circuit is configured to provide a pixel output signal from one of the three adjacent column lines, based on the bit pattern.

Abstract: According to one embodiment, a solid-state imaging device includes an imaging area, a vertical line drive circuit, and a control circuit. The imaging area is provided with a plurality of unit pixels arrayed like a two-dimensional matrix. Each unit pixel includes a photoelectric conversion element, a read transistor, an amplifier transistor, and a reset transistor. The vertical line drive circuit is configured to select and drive the unit pixels at a unit of row, and to set a signal storage time of the photoelectric conversion element of each driven unit pixel. The control circuit connected to the vertical line drive circuit, is configured to execute a variable control of the signal storage time at a unit of row of the unit pixel.

Abstract: Reset noise in pixels is removed. A solid-state imaging device includes pixels arranged in row and column directions, in which each of the pixels includes a charge-voltage conversion terminal for voltage-converting signal charges transferred from a photoelectric conversion element by a transfer means, and a first reset means for resetting a voltage at the charge-voltage conversion terminal; signal lines, each of which is connected to the pixels in each column; a scanning means for selecting one row among others; and constant current circuit elements for supplying constant current to the signal lines. In the device, within each selected row, each reset voltage at each charge-voltage conversion terminal and a converted voltage from transferred signal charges are read out to and stored in each signal line supplied with constant current by each constant current circuit element, and then output.

Abstract: An image pickup sensor that can properly carry out correction processing on noise components at high speed without bringing about an increase in cost. In an effective pixel region, pixels for obtaining image pickup signals used as a picked-up image are arranged. A plurality of reference pixel regions in which pixels for obtaining reference signals for the image pickup signals are arranged are disposed adjacent to opposing sides of the effective pixel region. A holding unit holds the image pickup signals obtained from the effective pixel region and the reference signals obtained from the plurality of reference pixel regions, the image pickup signals and the reference signals vertically scanned on a row-by-row basis. A horizontal scanning unit that horizontally scans the image pickup signals and the reference signals held by the holding unit horizontally scans the reference signals held by the holding unit before the image pickup signals.

Abstract: An apparatus and method for forming a digital image are disclosed. The apparatus includes a plurality of pixel sensors and a controller. Each sensor includes a photodiode, a floating diffusion node that can be selectively connected to said photodiode or a reset voltage, and an analog-to-digital converter (ADC) connected to the floating diffusion node, the ADC converting a voltage on the floating diffusion node to a digital value. Each pixel sensor also includes an output circuit that connects the ADC to a bus. The apparatus also includes a controller that causes the ADCs to operate in parallel to convert the voltages on the floating diffusion nodes to the digital values in a time that is less than the time needed for the floating diffusion node to acquire ten electron equivalents of noise. The optional apparatus includes circuitry that allows correlated double sampling to be performed in each sensor.

Abstract: An imaging apparatus includes a control unit and a detector that includes multiple pixels and that performs an image capturing operation to output image data corresponding to radiation or light that is emitted. The image capturing operation includes a first image capturing operation in a first scanning area corresponding to part of the multiple pixels to output image data in the first scanning area and a second image capturing operation in a second scanning area larger than the first scanning area to output image data in the second scanning area. The control unit causes the detector to perform an accumulation operation in the second image capturing operation in a time determined so that an image artifact caused by the scanning area is lower than a predetermined allowable value on the basis of information about the amount of integration of accumulation times in the first image capturing operation.

Abstract: The present disclosure provides a solid-state image pickup element, including, a pixel portion in which plural pixels each carrying out photoelectric conversion are disposed in a matrix, and a pixel signal reading portion having a function of reading out pixel signals from the pixel portion to signal lines, and sampling reset levels and signal levels of the pixels, wherein the pixel signal reading portion includes column processing units converting analog signals read out into digital signals in correspondence to a column disposition of the pixels, respectively, and each of the column processing units carries out the sampling for the reset level of the pixel plural times, and averages a result of the sampling after the result of the sampling is integrated in a digital integrating circuit within each of the column processing units.

Abstract: An image sensing apparatus capable of reducing degradation of a signal-to-noise ratio property occurring when a driving frequency of an image sensing element is high, depending on a state of an operation mode. An information table is stored in a memory section, which includes information on a timing of a horizontal transfer driving signal for performing charge transfer in the horizontal direction in an image sensing element, information on a timing of a reset gate signal for performing charge sweep per pixel, and information on a timing of a feed-through sample-hold signal for sample-holding a feed-through section of the output signal of the image sensing element which becomes a black reference per pixel, in association with an operation mode of an image sensing apparatus. The information table associated with the set operation mode is selected from the memory section, and the element is driven based on the information table.

Abstract: An image sensing apparatus includes a pixel array including an optical black region and effective pixel region, and a scanning unit which scans the pixel array. The scanning unit includes a first shift register which scans the optical black region by a shift operation, and a second shift register which scans the effective pixel region by a shift operation. The second shift register starts the shift operation during a first period when the first shift register scans the optical black region, and scans a readout region serving as a partial region of the effective pixel region during a second period following the first period.

Abstract: Each optical sensor element includes an upper electrode, a lower electrode, and a light dependent variable resistance element formed of amorphous silicon. Each optical sensor pixel includes: a capacitive element between the lower electrode and a reference voltage line; a first transistor inputting a first power source voltage to a second electrode, connecting a first electrode to the lower electrode, and inputting a second clock to a control electrode; a second transistor inputting a second power source voltage to a second electrode, and connecting a control electrode to the lower electrode; and a third transistor connecting a second electrode to a first electrode of the second transistor, connecting a first electrode to the output line, and inputting a first clock to a control electrode.

Abstract: An analog-digital converter includes n comparators arranged in a first direction with a predetermined cell pitch and corresponding respectively to n input voltages, each comparator comparing a voltage value of a reference signal whose voltage value increases or decreases over time with an input voltage corresponding to the comparator. Each of the n comparators includes differential transistors to which the reference signal and the input voltage are given respectively. A differential transistor is formed by p unit transistors connected in series whose gates are given the reference signal, and another differential transistor is formed by p unit transistors connected in series whose gates are given the input voltage.

Abstract: In order to provide a photoelectric conversion apparatus, which is an apparatus excellent in reading speed, high S/N, high tone level, and low cost, the photoelectric conversion apparatus has a photoelectric conversion circuit section comprising a plurality of photoelectric conversion elements, switching elements, matrix signal wires, and gate drive wires arranged on a same substrate in order to output parallel signals, a driving circuit section for applying a driving signal to the gate drive wire, and a reading circuit section for converting the parallel signals transferred through the matrix signal wires to serial signals to output them, wherein the reading circuit section comprises at least one analog operational amplifier connected with each of the matrix signal wires, transfer switches for transferring output signals from the respective matrix signal wires, output through each amplifier, reading capacitors, and reading switches for successively reading the signals out of the reading capacitors in the for

Abstract: An image pickup apparatus includes a pixel unit divided into at least two regions which generates pixel signals, driving controllers which controls reading of the pixel signals from the regions, a storage unit storing pixel signals for one screen, a timing controller controlling a timing when the pixel signals are read from the storage unit based on a setting value of an input frame rate, and a timing generator which generates a driving signal for performing the reading processes of the pixel signals the regions in parallel in terms of time when the frame rate is larger than a predetermined threshold value and generates a driving signal for performing the reading processes of the pixel signals from the regions in series in terms of time when the frame rate is not larger than the predetermined threshold value, and which supplies the generated driving signal to the driving controllers.

Abstract: A method, of selectively reading less than all information from an image sensor for which member-pixels of a subset of the entire set of pixels are individually addressable, may include: sampling information from a targeted member-pixel of the subset without having to read information from the entire set of pixels; and adaptively reading information from another one or more but fewer than all member pixels of the entire set based upon the sampling information without having to read all pixels on the image sensor. A related digital camera may include features similar to elements of the method.

Abstract: An imaging apparatus includes a control unit and a detector that includes multiple pixels and that performs an image capturing operation to output image data corresponding to radiation or light that is emitted. The image capturing operation includes a first image capturing operation in a first scanning area corresponding to part of the multiple pixels to output image data in the first scanning area and a second image capturing operation in a second scanning area larger than the first scanning area to output image data in the second scanning area. The control unit causes the detector to perform an accumulation operation in the second image capturing operation in a time determined so that an image artifact caused by the scanning area is lower than a predetermined allowable value on the basis of information about the amount of integration of accumulation times in the first image capturing operation.

Abstract: A photoelectric conversion device includes a photoelectric conversion unit which is arranged in a semiconductor substrate, a charge holding portion which is arranged in the semiconductor substrate and temporarily holds a charge generated by the photoelectric conversion unit, a first transfer electrode which is arranged at a position above the semiconductor substrate to transfer a charge generated by the photoelectric conversion unit to the charge holding portion, a charge-voltage converter which is arranged in the semiconductor substrate and converts a charge into a voltage, and a second transfer electrode which is arranged at a position above the semiconductor substrate to transfer a charge held by the charge holding portion to the charge-voltage converter, and the first transfer electrode is arranged to cover the charge holding portion, and not to overlap the second transfer electrode when viewed from a direction perpendicular to the upper surface of the semiconductor substrate.

Abstract: A solid state imaging device with an electron multiplying function includes an imaging region VR formed of a plurality of vertical shift registers, a horizontal shift register HR that transfers electrons from the imaging region VR, a multiplication register EM that multiplies the electrons from the horizontal shift register HR, and an electron injecting electrode 11A provided at an end portion of a starting side of the imaging region VR in an electron transfer direction. A specific vertical shift register (channel CH1) into which the electrons are injected by the electron injecting electrode 11A is disposed in a thick part of a semiconductor substrate, and is set in such a way as to be blocked from incident light.

Abstract: A column buffer for use with a pixel cell array includes an amplifier coupled to three read-out circuits in parallel providing a signal corresponding to accumulated photon-generated charge in a pixel cell plus noise, a reset level plus noise, and a pedestal level, respectively. These three signals are used to generate an ultra-low noise signal Di=Si?Pi-1?G*(Ri?Ri-1), wherein S is the sampled signal, P is the pedestal level, R is the reset level, and G is a gain associated with a pixel cell, and wherein i is a frame number greater than 0. The three signals can be read-out simultaneously. In another embodiment, the three signals are obtained from a column buffer having only one output. In this case, the signals are read-out sequentially.

Abstract: The solid image pickup device of the present invention comprises a photoelectric conversion part, a charge-voltage conversion part for converting electric charges from the photoelectric conversion part to voltage signals, a signal amplifier for amplifying the voltage signals generated in the charge-voltage conversion part, charge transfer means for transferring photo-electric charges from the photoelectric conversion part to the charge-voltage conversion part, and means for applying a certain voltage to a charge-voltage conversion part, wherein at least two readout operations for reading out the photo-electric charges accumulated during a period of accumulating photo-electric charges in the photoelectric conversion part via a signal amplifier.

Abstract: A solid-state imaging device includes a pixel array section having unit pixels arranged two-dimensionally in a matrix form. Each of the unit pixels includes a charge generation section configured to generate a signal charge, charge transfer sections configured to transfer the signal charge generated by the charge generation section, and a signal output section configured to generate and output a target signal commensurate with the charge of the signal generated by the charge generation section. The plurality of charge transfer sections are provided for each of the charge generation sections. The plurality of charge transfer sections are connected, on the side opposite to the charge generation section, to the signal output sections in different rows.

Abstract: The disclosed subject matter is directed to solid state cameras and sensor systems that include a pickup surface thereof with both a distance detecting area for measuring a distance from a moving object and a movement detecting area for detecting the object's movement. The device can also include an optical communication area for communicating with an outside communication device. Therefore, the device enables a single pickup surface to include at least the following three functions: distance measurement; movement detection; and optical communication. The above-described sensor systems can output a control signal for collision avoidance with stationary or moving obstacle(s) by using the solid state camera. Because the sensor system can be integrated as a single chip IC with a small size, the system is useful as a sensor device in a vehicle, a robot, and the like.

Abstract: A imaging-device driving unit, comprising a signal generator, a detector, and a controller, is provided. The imaging-device driving unit drives an imaging device that has a charge-transfer channel. The charge-transfer channel transfers the signal charges at a speed according to a frequency of a channel-driving signal. The signal generator generates one among a normal transfer signal, and a first and second discharge signals. The first discharge signal is the channel-driving signal whose frequency is determined for discharging an electrical charge remaining in the charge-transfer channel and greater than that of the normal transfer signal. The detector detects a remaining power. The controller orders the signal generator to generate the first discharge signal if the electrical charges remaining in the charge-transfer channel should be discharged and the remaining power is less than a threshold.

Abstract: A CMOS image sensor in which each column of pixels is connected to a signal line that is coupled to a current source, and each pixel includes a charge amplifier having a common source configuration arranged such that a charge generated by its photodiode is amplified by the charge amplifier and transmitted to readout circuitry by way of the signal line. In one embodiment the charge amplifier utilizes an NMOS transistor to couple the photodiode charge in an inverted manner to the signal line while converting the charge to a voltage through a capacitor coupled between the signal line and photodiode (i.e., forming a feedback of the NMOS amplifier transistor).

Abstract: A method of manufacturing a solid-state imaging device. Light-receiving sensor portions each constituting a pixel in the form of a matrix is arranged. The matrix has columns aligned in a vertical direction and rows aligned in a horizontal direction. Charge-transfer portions are formed on either side of the columns of said pixels. Transfer electrodes in said charge-transfer portions are formed to include a first transfer electrode formed of a first electrode layer and a second transfer electrode formed by electrically connecting the first electrode layer and a second electrode layer through a contact. The second transfer electrode being disposed in the vertical direction above the charge-transfer portion in a vicinity of the contact to decrease the width of the charge-transfer portions in the horizontal direction and increase the light receiving sensor portions in the vertical direction.

Abstract: In order to provide a photoelectric conversion apparatus, which is an apparatus excellent in reading speed, high S/N, high tone level, and low cost, the photoelectric conversion apparatus has a photoelectric conversion circuit section comprising a plurality of photoelectric conversion elements, switching elements, matrix signal wires, and gate drive wires arranged on a same substrate in order to output parallel signals, a driving circuit section for applying a driving signal to the gate drive wire, and a reading circuit section for converting the parallel signals transferred through the matrix signal wires to serial signals to output them, wherein the reading circuit section comprises at least one analog operational amplifier connected with each of the matrix signal wires, transfer switches for transferring output signals from the respective matrix signal wires, output through each amplifier, reading capacitors, and reading switches for successively reading the signals out of the reading capacitors in the for

Abstract: A solid-state imaging device capable of securing sufficient sensitivity and obtaining favorable characteristics is provided. The solid-state imaging device includes a charge-transfer portion 2 provided on one side of each column of light-receiving sensor portions 1, each forming a pixel, arranged in the form of a matrix and a transfer electrode of the charge-transfer portion 2 including a first transfer electrode formed of first electrode layers 3A and 3C and a second transfer electrode formed by electrically connecting first electrode layers 3B and 3D and a second electrode layer 4; the first electrode layers 3B and 3D in the second transfer electrode are independently formed in each of the charge-transfer portion 2; and the first transfer electrodes 3A and 3C and the second electrode layer 4 are laminated in a portion between pixels adjacent to each other in the direction of the charge-transfer portions 2.

Abstract: A solid-state image device including a pixel-array section forming an image pick-up region and a wiring layer including wiring lines and contact units. In one embodiment, each of the contact units and wiring lines is provided for a respective pixel in the pixel-array section, and the image-pickup region is divided into a first region and a second region with respect to a central portion of the image-pickup region. Further, positions of contact units and wiring lines arranged in the first region are opposite to positions of corresponding contact units and wiring lines arranged in the second region.

Abstract: A signal reading method successively outputs a read signal by scanning a voltage value of an integrating capacitor in an image sensor in which a plurality of sensor parts are arranged in a two-dimensional array made up of rows and columns and each sensor part includes the integrating capacitor accumulating a charge obtained by integrating a photocurrent output from a sensor. A first integration of the photocurrent using the integrating capacitor and a first sampling and holding using a sample and hold capacitor are performed in a first time interval, during a time of one frame made up of the first through third time intervals. A second integration of the photocurrent using the integrating capacitor is performed in the second time interval, and processes in the first and second time intervals are performed in common with respect to all of the sensor parts simultaneously. A vertical scan is started by selecting the row in an order starting from a first row.

Abstract: A solid-state imaging apparatus including: an imaging section having pixels arranged into a matrix; a conversion section for digitizing pixel signals; a block memory section formed of a first line memory corresponding to at least N lines (N being an integral number of 2 or more) for retaining the pixel signals; and a drive control section for controlling so as to read out and cause to be retained at the block memory section pixel signals corresponding to M lines (M being an integral number between 2 and N inclusive) in a period shorter than period necessary for an external circuit to process pixel signals corresponding to 1 line, and then controlling so as to bring into halt condition at least one of imaging section and conversion section in a remaining period in the period necessary for external circuit to process pixel signals corresponding to M lines.

Abstract: A method and associated architecture for dividing column readout circuitry in an active pixel sensor in a manner which reduces the parasitic capacitance on the readout line. In a preferred implementation, column readout circuits are grouped in blocks and provided with block signaling. Accordingly, only column output circuits in a selected block significantly impart a parasitic capacitance effect on shared column readout lines. Block signaling allows increasing pixel readout rate while maintaining a constant frame rate for utility in large format high-speed imaging applications.

Abstract: A method and associated architecture for dividing column readout circuitry in an active pixel sensor in a manner which reduces the parasitic capacitance on the readout line. In a preferred implementation, column readout circuits are grouped in blocks and provided with block signaling. Accordingly, only column output circuits in a selected block significantly impart a parasitic capacitance effect on shared column readout lines. Block signaling allows increasing pixel readout rate while maintaining a constant frame rate for utility in large format high-speed imaging applications.