Abstract: For accomplishing increase in S/N ratios, improvement in operability, and decrease of cost, a photoelectric conversion device comprises: a photoelectric conversion portion comprising a plurality of photoelectric conversion pixels arranged in row and column directions, a plurality of signal wires wired in the column direction, each of the signal wires connecting outputs of photoelectric conversion pixels arranged in the same column, and a plurality of control lines wired in the row direction, each of the control lines connecting control terminals for controlling signal output operation of photoelectric conversion pixels arranged in the same row; a plurality of analog memory means for storing analog voltages obtained from analog voltage conversion means for converting information charges based on the photoelectric conversion pixels to the analog voltages and for maintaining the analog voltages as outputs, each of the analog memory means being connected to each of the signal wires; and a plurality of A/D convers

Abstract: An image sensor comprising a matrix of solid-state light sensor elements each representing a unit pixel, which is capable of reading out sensor signals from respective pixels in a time series by sequentially selecting pixels on a line-by-line basis and sequentially selecting pixels in a selected line, wherein each pixel line is divided into a plurality of blocks with each block composed of the same specified number of pixels and a first scanning means sequentially reads pixel sensor signals on the block-by-block basis starting from the first block and a second scanning means reads pixel sensor signals of the readout block. The image sensor thus constructed can achieve high speed scanning of respective pixels with a minimal increase in power consumption.

Abstract: An image sensing apparatus which reduces noise generated by shift operation and power consumption is disclosed. The shift register of a horizontal scanning circuit is divided into a plurality of partial shift registers. Shift clock control circuits control supply of a shift clock to the partial shift registers individually for each partial shift register.

Abstract: The present invention is directed to an analog delay line for a color CMOS image sensor which is compatible with MOS fabrication technology. The invention allows for the simultaneous reading of pixel signals from two rows of pixels so that combinations of signals from pixels in different rows may be obtained. The delay line includes a set of storage capacitors on which the pixel signals are stored, and a means for writing the signals from the pixels onto the capacitors in sequence. The stored analog pixel signals may then be read out from the delay line at the appropriate time so that they may be combined with pixel signals from adjacent pixels in different rows. In one embodiment, two delay lines are used, so that pixel signals from a current row can be written into one delay line, while the pixel signals from a previous row are being read out from the other delay line. In another embodiment, a single delay line is used in combination with a single pixel delay circuit.

Abstract: In a photoelectric conversion device having a plurality of pixel cells each of which includes a photoelectric conversion element, a field effect transistor having the gate area for storing signal charge generated by the photoelectric conversion element and the source-drain path for outputting a signal corresponding to the signal charge stored in the gate, a first power supply line for supplying electric power to the field effect transistor, and a first switch connected between the field effect transistor and the first power supply line, when a reset voltage for resetting the gate of the field effect transistor is Vsig0, a threshold voltage of the field effect transistor is Vth, current flowing through the field effect transistor is Ia, a voltage applied via the first power supply line is Vc1, and a series resistance of the first switch is Ron, each pixel cell is configured to satisfy a condition determined by Vc1−Ron×Ia>Vsig0−Vth.

Abstract: In a shooting operation of a digital camera including a MOS-type solid-state image pickup device to produce a still picture, a predetermined electronic shutter operation is interrupted to conduct a reset operation for all photoelectric converter elements at a time, a strobe device is operated after the reset operation, a light shielding device is then operated for a predetermined period of time, and an image signal readout operation is conducted during the operation of the light shielding device to obtain still picture data. Even if a shooting object is moving at a high speed, a still picture undergone backlight correction can be obtained without any blur.

Abstract: A one-piece cable support including an integral box-shaped mounting assembly. The box-shaped mounting assembly extends over a cable tray portion of the cable support and includes several optional mounting apertures. Once secured to a building structure through the box-shaped mounting assembly, the weight of a suspended bundle of cables is distributed evenly below the assembly, thereby permitting the load to be balanced evenly below the assembly and reducing the bending moment and therefore the stress on the wall portion connecting the cable tray and mounting assembly portions of the support. An integral bracket assembly is provided on the bottom of the cable support to allow easy ganging of multiple cable supports without the need for specialized brackets.

Abstract: A physical quantity distribution sensor is disclosed. The sensor comprises: a plurality of sensor/storage sections each having a sensor element for sensing a received physical quantity and a storage element for storing the information of physical quantity sensed by the sensor element; a selector for selecting at least one of the sensor/storage sections; and a plurality of buffers each capable of detecting and supplying the information stored in at least one selected sensor/storage section. This sensor further comprises at least one selection signal transfer line for transferring an output of the selector. Power supply input portions of the buffers are connected to the selection signal transfer line, and the buffers are operated using, as a power voltage, an output of the selector entered into the buffers through the selection signal transfer line.

Abstract: A solid-state image pickup device is provided which comprises a plurality of pixels arranged two-dimensionally. Each pixel comprises a reset section for resetting an electric charge accumulation voltage generated by photoelectric conversion, and an amplification section for outputting a signal voltage corresponding to the electronic charge accumulation voltage, a voltage switch section for switching a voltage to be supplied to the reset section between a reset voltage and a second reference voltage, the second reference voltage being lower than the reset voltage; and a voltage fix section for fixing the electronic charge accumulation voltage to a predetermined value.

Abstract: A system of reducing power consumption in and active pixels sensor. The sensor is broken into different blocks, and each of the blocks is individually optimized. The optimization may include minimizing the parasitic capacitance on the readout bus, turning off biases when not in use, and operating in a way that minimizes static power consumption of different elements such as A/D converters.

Abstract: An image reading device ready to operate at higher speed is built as an IC chip having a plurality of processing sections, of which each has a plurality of image reading photoelectric conversion elements, a plurality of transistors for reading a photoelectric conversion signal from the image reading photoelectric conversion elements, a signal selection circuit for sequentially selecting the plurality of transistors, and a signal output line by way of which the photoelectric conversion signal is transmitted.

Abstract: A color display having horizontal sub-pizel arrangements and layouts is disclosed. The display can include a plurality of a sub-pixel group. The sub-pixel group can have a plurality of sub-pixels wherein each sub-pixel has a height along a vertical axis and a width along a horizontal axis. The width of each sub-pixel is greater in length than its height in the sub-pixel group. The display also includes a column driver coupled to each sub-pixel in a column and a row driver coupled to each sub-pixel in a row of the sub-pixel group. Each sub-pixel in the sub-pixel group is coupled to the row driver along the width of the sub-pixel.

Abstract: A method and system using a sensor array includes a programmable analog/multi-level memory array for modifying individual outputs from elements in the sensor array in order to obtain a desired sensor array output. The memory array can be programmed with data corresponding to desired modifications, such as low and high offset voltage correction, low gain correction, and gamma correction. Consequently, by utilizing arithmetic circuits, the adverse effects of corrupted elements in a sensor can be corrected by re-programming the memory array with different modification data as the need arises.

Abstract: If image data of a prior frame and image data of a current frame are compared with each other, a resulting image appears doubled because the distance of travel of an object within one frame becomes long when the object moves quickly.

Abstract: In a solid-state image pickup apparatus including a pixel section having a plurality of arrayed pixels and a scanning circuit for scanning the pixel section, the scanning circuit is constructed as having: a shift register section consisting of cascaded shift register units; a signal select section consisting of a plurality of signal select units arranged in a manner corresponding to the shift register units; and a scan control section for generating scan control signal for controlling the signal select unit. Outputs of the shift register units are selectively provided as scanning signal through the signal select units which are controlled by the scan control signal. Thereby, pixel signals corresponding to a full angle of view can be read out at a rapid frame rate even in the high-definition solid-state image pickup apparatus where the number of pixels is very large.

Abstract: A storage pixel sensor disposed on a semiconductor substrate comprises a photosensor. At least one nonlinear capacitive element is coupled to the photosensor. At least one nonlinear capacitive element is arranged to have a compressive photocharge-to-voltage gain function. An amplifier has an input coupled to the nonlinear capacitor and an output. Other, non-capacitive elements may be employed to produce a compressive photo-charge-to-voltage gain having at least one breakpoint.

Abstract: An image sensing apparatus includes a sensor which generates the image signal of an object, an operation unit which, when the signals of a plurality of frames of the object are read out from the sensor at the first resolution and the second resolution higher than the first resolution, operates the sensor so as to set intervals between read-out starts of image signals of the plurality of frames to be constant, and a controller which performs control so as to execute at least one of exposure adjustment and focus adjustment on the basis of an image signal read out from the sensor at the first resolution, and to execute image processing on the basis of an image signal read out from the sensor at the second resolution under adjusted conditions.

Abstract: An image sensor includes a plurality of unit cells, each adapted to generate charge in response to photons incident thereon and array elements adapted to sum charge from one or more unit cells at a focal plane of the image sensor. Alternatively, the array elements may be adapted to change a resolution of the output of the image sensor at its focal plane. The invention includes the method performed by the image sensor.

Abstract: An image sensor with sampling control system including a sensor unit 1 having a number of pixel circuits arranged in matrix, a memory unit 2 having a number of memory circuits 12 arranged in matrix, each memory circuits being corresponding to respective pixel circuits, a first horizontal shift register 9 writing a pixel read-out pattern into said memory circuits in accordance with an externally supplied sample selection signal, a first vertical shift register 8 for generating signals for writing and reading said pixel read-out pattern into and out of said memory circuits, a second vertical shift register 7 driven in synchronism with said first vertical shift register 8 for supplying a pixel value read-out signal to said pixels circuits, a second horizontal shift register 3 for outputting pixel values selected in accordance with the pixel read-out pattern, a third horizontal shift register 4 for outputting all pixel values, and a switch unit 6 for selectively reading the pixel values out of any one of said sec

Abstract: In order to realize a photoelectric conversion apparatus capable of easily switching a mode requiring a wide dynamic range in obtaining a motion image and a mode requiring a reduction in noise in obtaining a still image, a mode switching means is used, when a refresh operation is performed for each photoelectric conversion element, to switch between a mode of setting the potential of one electrode of the photoelectric conversion element to be higher than the potential of the other electrode, and a mode of setting the potential of one electrode of the photoelectric conversion element to be lower than the potential of the other electrode, thereby arbitrarily changing the refresh voltage. With this operation, desired photoelectric conversion signals for a motion image and a still image can be obtained.

Abstract: A pixel column amplifier architecture creates a reduced noise differential image signal from an pixel sensor array. The pixel column amplifier architecture comprises a first double sampling (DS) circuit and a second DS circuit that has the same configuration as the first DS circuit. An image signal containing a combination of noise components created on a substrate is coupled to the first DS circuit. A reference image signal, held in a reset state, represents the noise component of the image signal and is coupled to the second DS circuit. Further, a reference voltage source is coupled to a reference input of both the first DS and the second DS circuits. The first DS circuit provides the first side of the differential image signal, and the second DS circuit provides the second side of the differential image signal.

Abstract: An MOS-type solid-state imaging apparatus includes an imaging region formed by two-dimensionally arranging unit cells serving as photoelectric conversion portions on a semiconductor substrate, a plurality of vertical address lines arranged in a row direction of the imaging region to select a row of unit cells to be addressed, a plurality of vertical signal lines arranged in a column direction of the imaging region to read out signals from the unit cells in each column, a plurality of load transistors each connected to one end of each of the vertical signal lines, and a plurality of horizontal selection transistors each connected to the other end of each of the vertical signal lines.

Abstract: A data conversion/output apparatus includes a large number of sensors, voltage-time conversion circuits, and sensed data generation circuits. The voltage-time conversion circuits are arranged adjacent to the respective sensors, and change output levels upon the lapse of times corresponding to output voltage values from the sensors after a conversion operation start point in order to convert the voltage outputs of the sensors into times. The sensed data generation circuits output, as digital data, lapse times until the output levels of the voltage-time conversion circuits change after a substantial conversion start point.

Abstract: An image sensor including a plurality of data lines and a plurality of pixels arranged in a two-dimensional form, each pixel having both a horizontal address and a vertical address allocated and including a light receiving element and a switching element for drivingly connecting the light receiving element to one of the data lines which is connected to the same pixel. A reading block is interposed between each of the data lines and an output line and has a predetermined low input impedance with respect to a connection of an input end thereof to each of the data lines.

Abstract: The consumed power of a MOS type sensor including a floating diffusion (FD) amplifier in each pixel is reduced. For this purpose, drain regions (regions for supplying a pulse voltage to FD portions through reset transistors) of unit pixels are connected to different drain lines row by row, so as to selectively supply a power pulse to each row. The power pulse is set to a HIGH level potential at least during a period when signal charge stored in the FD portion is reset and a period when the signal charge stored in the FD portion is detected.

Abstract: In a photosensitive device wherein voltages are read sequentially from a dark, or dummy, photosensor and a plurality of active photosensors with each of a series of scans, a circuit downstream of the photosensors resets the offset value of the voltage signals, based on successive voltage readings from the dark photosensor. An RC averaging circuit maintains a running average of readings from the dark photosensor over a large number of scans. Signals from the dark photosensors are read a first time into the averaging circuit, and then signals from the dark photosensors are read directly to downstream video circuitry. This double readout of dark-photosensor signals enables precise calibration of both on-chip circuitry and downstream video circuitry.

Abstract: The invention relates to a method for reading out the image points of a two-dimensional electronic image sensor, the image being subdivided into at least two different regions (2, 3) and the region of greater interest ROI (2) being read at a scanning rate which is higher than that used for the other region (3). Consequently, the region of interest (2) can be reproduced with a higher temporal resolution while making optimum use of the limited processing capacities. Preferably, the sensitivity of the reading unit is adapted in conformity with the scanning rate of a relevant image point so as to take into account the fact that image points that are read out less frequently collect a light intensity over a prolonged period of time and hence may reach high signal strengths. Regions that are less frequently read out can also be irradiated with a lower radiation intensity by applying appropriate masking. The method is very suitable for the imaging of time-critical processes in medical X-ray applications.

Abstract: A radiation image pick-up apparatus includes a conversion element, accumulation element, read element, detection element, driving circuit, and controller. The conversion element converts radiation into an electrical signal. The accumulation unit accumulates the electrical signal converted by the conversion element. The read unit reads out the electrical signal accumulated in the accumulation unit. The detection element detects the start and end of irradiation of the radiation. The driving circuit accumulates the electrical signal in the accumulation element responsive to the detection of start of irradiation of the radiation, and drives the read element responsive to the detection of the end of irradiation of the radiation, based on the detection result of the detection element. The controller controls the driving circuit. A radiation image pick-up system is also disclosed.

Abstract: An image sensor device comprising a silicon substrate having a plurality of CMOS circuit formed thereon, including a pixel array having a plurality of rows and a plurality of columns, a row addressing circuit operatively connected to each the pixel array and the timing control circuit, the row addressing circuit having a row bus that provides address lines to each row in the pixel array, a column addressing circuit, a pixel timing circuit, a timing control logic block, a signal processing circuit, and an interface circuit coupled to external computational means for provision of address and control signals to the sensor device, the interface circuit being operatively coupled the timing control logic, the pixel timing circuit, the row addressing circuit and the column addressing circuit.

Abstract: A correlated double sampling unit within a CMOS imager employs an image sensor having a plurality of photodetectors arranged in a series of rows and columns with a row addressing circuit, a column addressing circuit, a first sample and hold circuit allocated for each of the columns, a transfer circuit operatively connecting each of the columns to the first sample and hold circuit for each of the columns, and a plurality of second sample and hold circuits, each of the second sample and hold circuits being operatively connected to a subset of the first sample and hold circuits.

Abstract: The pixels of an image sensor array can be readout (84, 85) in m×n blocks (m, n) that are compatible with the operation of a desired image compression algorithm (14), thereby reducing the amount of memory required by the image compression algorithm.

Abstract: A photosensor system performs a sensitivity-adjusting reading operation with respect to a subject image, while simultaneously changing the image reading sensitivity stepwise for each of rows of a photosensor array or for specific rows thereof. The dynamic ranges of the lightness data on the read subject image are checked to see how they are distributed in relation to the image reading sensitivities. On the basis of this distribution, an image reading sensitivity that contributes to an optimal image reading state is extracted as an optimal image reading sensitivity.

Abstract: An image pickup apparatus is provided, which comprises a plurality of image pickup areas formed on a same semiconductor chip and arranged in the horizontal and the vertical directions, each image pickup area having a plurality of pixels arranged in the horizontal and the vertical directions, a plurality of vertical scanning circuits which sequentially scan pixels in the vertical direction to scan a plurality of image pickup areas in the vertical direction independently from each other, a plurality of lenses, at least one of which is provided in each of the plurality of image pickup areas and which focuses light to form an image on the image pickup areas, and a driving circuit which drives the plurality of vertical scanning circuits so that at least a part of a scanning period of each of the plurality of vertical scanning circuits overlaps with each other.

Abstract: To implement a solid-state image pickup element in which the peripheral circuit is downsized, there is provided a solid-state image pickup element including a plurality of pixel blocks each having a plurality of photoelectric conversion elements, a plurality of transfer switches each having one terminal connected to a corresponding photoelectric conversion element, a signal input portion commonly connected to the other terminal of each of the plurality of transfer switches, and an amplifier connected to the signal input portion, and a scanning circuit for outputting a scanning clock for each pixel block.

Abstract: In an image capture system having a sensor with a first node and a second node, a method of capturing image data is disclosed. The first node is reset. The second node is reset. An image is collected on the first node. A first pixel value is then transferred from the first node to the second node after a first predetermined time period. The first pixel value and a second pixel value is then provided after a second predetermined time period. An arithmetic operation is performed on the first pixel value and the second pixel value. A system for performing the method is also disclosed.

Abstract: A digital camera includes an image pick-up element that can read out pixel data in a nondestructive manner, specifying means for specifying addresses of a plurality of pixels thinned out among all pixels of the image pick-up element, and data read-out means for reading out pixel data of the specified plurality of pixels in a destructive manner before a main exposure and pixel data of the specified plurality of pixels in a nondestructive manner during said main exposure.

Abstract: An imaging apparatus that is configurable to operate in at least two modes. One mode is particularly suitable for still image capture, whereas the second mode is suitable for video image capture and other rapid frame rate applications. The image data in the second mode is smaller (lower resolution) than the image data obtained in the first mode. The reduction is accomplished by either digital scaling, cropping, or by a combination of optical scaling and selective readout of sensor signals. The simple digital scaling provides a fixed angular field of view for both modes of operation, while cropping alone gives a smaller field of view. Using the combination of optical scaling and selective sensor signal readout, however, provides a wider field of view for the second mode of operation while at the same time providing lower resolution images, thus improving frame rate in the second mode of operation.

Abstract: In a radiation detector, an active matrix board is formed of switching elements of polycrystalline silicon thin film transistors produced by a poly-silicon (poly-Si) process, charge storage capacitances, insulating layers, electrodes, gate lines and data lines, on which a converting layer is formed by polycrystalline, such as CdTe and CdZnTe, having a high sensitivity with respect to light and radiation at a film-forming temperature higher than 300° C. A gate driving circuit and a signal reading-out circuit are provided on the active matrix board, and signals of the respective images are scanned to take out to the outside. Thus, by using the high heat resistant matrix process board, the radiation detector having a wide dynamic range and a high signal to noise (S/N) ratio can be obtained.

Abstract: When a still image is picked up with an electronic camera utilizing a MOS type solid-state image pickup device, a flashing device is operated under the condition that both an image signal read operation and an electronic shutter operation are not performed, and the MOS type solid-state image pickup device is controlled so that the same exposure time is set to each photoelectric conversion element. Backlight correction can be achieved.

Abstract: Disclosed is an image pickup apparatus, which comprises a two-dimensional image pickup area, a vertical line selector for selecting a reading row in said image pickup area, a plurality of vertical signal lines arranged in columnar direction, for reading a detection signal emitted by a photodiode located in a selected row, and a horizontal selection transistor for continuously reading detection signals carried by the vertical signal lines and writing the signals to a horizontal signal line arranged like a row in a matrix, wherein a noise canceling circuit that employs a capacitor to suppress noise that appears on the vertical signal lines is provided between the vertical signal lines and the horizontal selection transistor, wherein an impedance conversion unit is provided between the vertical signal lines and the capacitor of the noise canceling circuit, and wherein a constant current element for supplying a bias current and a switch for changing the output current of a constant current element are provided to

Abstract: There is provided an image pickup apparatus comprising a plurality of pixels each including a photoelectric conversion unit which converts incident light into an electrical signal and accumulates the electrical signal, an amplifier transistor which amplifies and outputs the signal from the photoelectric conversion unit, a transfer transistor which transfers the electrical signal accumulated in the photoelectric conversion unit to the amplifier transistor, and a processing transistor which performs predetermined processing, and a control circuit which sets the signal level supplied to the control electrode of the transfer transistor in order to turn off the transfer transistor to be lower than the signal level supplied to the control electrode of the processing transistor in order to turn off the processing transistor.

Abstract: A signal transfer gain is prevented from being lowered by parasitic capacitance. A signal processing apparatus is provided which includes switches provided for a plurality of signal sources, a common line to which signals from the plurality of signal sources are sequentially transferred, and a parasitic capacitance control circuit for controlling parasitic capacitance of the common line in accordance with the level of the signal on the common line.

Abstract: Improved circuitry for active matrix image arrays which, in one application reduces the number of source or gate lines for a given number of pixels, and in another application extends the dynamic range of the imaging array without reducing the number of source or gate lines. Each circuit includes multiple electrodes per pixel and multiple thin film transistors for switching charge from the pixel electrodes to the data line.

Abstract: A solid-state imaging device comprising an imaging area having unit cells, a vertical driving circuit, signal processing circuits, a horizontal driving circuit, and an output circuit. Each of the unit cells including first and second photoelectric conversion/storage sections, first and second charge readout circuits, a potential detecting circuit, a reset circuit, and an address circuit. The solid-state imaging device has a first operation mode in which the first and second charge readout circuits are driven at substantially the same timing by the vertical driving circuit, the charges stored in the first and second photoelectric conversion/storage sections are transferred to and added together in the charge detecting section, and the potential detecting circuit detects the added charges, generates and transmits a potential corresponding to an amount of detected charges to the vertical signal line, and outputs the potential from the output circuit via the signal processing circuits.

Abstract: A number of photoelectric conversion elements are disposed in a plurality of rows and columns in a pixel shift layout, and an analog/digital conversion unit is provided per two photoelectric conversion element columns to form a MOS type solid-state image pickup device. It is possible to suppress an increase in the manufacture cost of MOS type solid state image pickup devices with built-in A/D conversion units and improve the integration degree of photoelectric conversion elements.

Abstract: An MOS-type solid-state imaging apparatus includes an imaging region formed by two-dimensionally arranging unit cells serving as photoelectric conversion portions on a semiconductor substrate, a plurality of vertical address lines arranged in a row direction of the imaging region to select a row of unit cells to be addressed, a plurality of vertical signal lines arranged in a column direction of the imaging region to read out signals from the unit cells in each column, a plurality of load transistors each connected to one end of each of the vertical signal lines, and a plurality of horizontal selection transistors each connected to the other end of each of the vertical signal lines.

Abstract: In order to provide a photoelectric conversion apparatus, which is an apparatus excellent in reading speed, high S/N, high tone level, and low cost, the photoelectric conversion apparatus has a photoelectric conversion circuit section comprising a plurality of photoelectric conversion elements, switching elements, matrix signal wires, and gate drive wires arranged on a same substrate in order to output parallel signals, a driving circuit section for applying a driving signal to the gate drive wire, and a reading circuit section for converting the parallel signals transferred through the matrix signal wires to serial signals to output them, wherein the reading circuit section comprises at least one analog operational amplifier connected with each of the matrix signal wires, transfer switches for transferring output signals from the respective matrix signal wires, output through each amplifier, reading capacitors, and reading switches for successively reading the signals out of the reading capacitors in the for

Abstract: An image pick-up apparatus including an image sensor with a matrix of radiation-sensitive elements, notably a CCD image sensor, is provided with a control circuit for selecting gate electrodes as collecting gate electrodes or as isolating gate electrodes by application of an electric potential of suitable polarity. Groups of collecting gate electrodes are separated from one another by isolating gate electrodes. The surface area of such a group of collecting gate electrodes co-determines the modulation transfer function and hence the spatial resolution of the image sensor; this surface area, and hence the spatial resolution, can be adjusted by adjustment of the electric potentials. Notably the spatial resolution can be rendered dependent on the different modes of operation of the image pick-up apparatus, for example when the image pick-up apparatus forms part of an X-ray examination apparatus which is suitable for fluoroscopy as well as for making X-ray images.

Abstract: A solid-state imaging device includes unit cells, arranged in a matrix of rows and columns, each having a photodiode for photoelectrically converting incident light to store signal charges, a readout transistor Td for reading out the signal charges and amplifying transistor Tb for amplifying signals readout at a detection node, a plurality of vertical shift registers for generating signal charge readout pulses ESi, DRi, ROi and a voltage switching circuit for setting a voltage VDR of the readout pulse DRi for dynamic range control lower than voltages of both a readout pulse ESi for an electronic shutter and a usual readout pulse ROi. The solid-state imaging device provides excellent images without clipping from a small signal region to large signal region.

Abstract: An image sensor and a pixel reading method used this image sensor, in which the accuracy of a black level can be increased by that an optical black region being the black level reference of signals is read every horizontal line at a local or random access mode, are provided. And also the structure of a camera system used this image sensor can be simplified is provided. The image sensor is a MOS type image sensor composed of a pixel array region and an optical black region disposed at the one end in the pixel array region. And the MOS type image sensor provides a mode selector that selects the local access or random access mode or a frame access mode. When the local access or random access mode is activated, the image sensor decides a pixel reading region in the pixel array region. The image sensor reads information of one or more pixels having a designated horizontal line address in the pixel reading region every horizontal line address.