Abstract: The present invention relates to a photographing apparatus having lens adjustment parts, comprising: a housing in which an object to be photographed is located; a camera located inside the housing to photograph the object; a lens unit having at least one lens knob; at least one link part located inside the housing and coupled to the lens knobs to rotate the lens knobs; a fixing part hingedly coupled to the link parts; and the lens adjustment parts coupled to one end of the link parts in such a manner as to be linearly moved according to a user's adjustment.

Abstract: Projection objectives, such as projection objectives of lithography projection exposure apparatuses, as well as related systems, components and methods, such as methods of revising and/or repairing such objectives, are disclosed.

Abstract: An apparatus forming an area of minimum light intensity enclosed by high light intensity includes two objectives focusing light of opposite directions into a common focal area. Light intensities of a first pair of light beams extinguish each other in a first partial area of the focal area. Beam paths of the first pair of beams pass through the objectives in a first pair of partial areas of the pupils of the objectives. Light intensities of a second pair of light beams extinguish each other in a second partial area of the focal area. Beam paths of the second pair of light beams pass through the objectives in a second pair of partial areas which are offset with regard to the first pair of partial areas of the pupils; and the light of the second pair does not interfere with the light of the first pair of light beams.

Abstract: Disclosed herein are a maskless exposure apparatus configured to perform exposure by tilting a beam spot array with respect to a scan direction (Y-axis direction) thus preventing stitching stripes and a stitching method using the same. A step distance, in which exposure dose uniformity in a stitching area is within a tolerance range, is calculated using actual position data of beam spots constituting the beam spot array on an exposure plane, and if necessary, using beam power data and/or beam size data. As exposure is performed based on image data conforming to the step distance, the stitching area has a uniform exposure dose, enabling exposure without stitching stripes.

Abstract: A projection exposure system (10) for microlithography which includes: a mask holding device (14) holding a mask (18) with mask structures (20) disposed on the mask, a substrate holding device (36) holding a substrate (30), projection optics (26) imaging the mask structures (20) onto the substrate (30) during an exposure process, and a measurement structure (48) disposed in a defined position with respect to a reference element (16) of the projection exposure system (10), which defined position is mechanically uncoupled from the position of the mask holding device (14). The projection exposure system (10) also includes a detector (52) arranged to record an image of the measurement structure (48) imaged by the projection optics (26). The projection exposure system (10) is configured such that during operation of the projection exposure system (10) the imaging of the mask structures (20) and the imaging of the measurement structure (48) take place at the same time by the projection optics (26.

Abstract: The technology disclosed relates to improved acousto-optic deflectors (AODs). In particular, it relates to compensation for subtle effects not previously addressed by AOD designers. A shifting center of gravity is described and addressed using advanced power equalization strategies. Denser writing brushes are provided by using a two-dimensional array of beams with corrections for factors such as angle of incidence at the AOD interface.

Abstract: An EUV (extreme ultraviolet) lithography apparatus (1) including: a housing (1a) enclosing an interior (15), at least one reflective optical element (5, 6, 8, 9, 10, 14.1 to 14.6) arranged in the interior (15), a vacuum generating unit (1b) generating a residual gas atmosphere in the interior (15), and a residual gas analyzer (18a, 18b) detecting at least one contaminating substance (17a) in the residual gas atmosphere. The residual gas analyzer (18a) has a storage device (21) having an ion trap for storing the contaminating substance (17a). Additionally, a method for detecting at least one contaminating substance by residual gas analysis of a residual gas atmosphere of an EUV lithography apparatus (1) having a housing (1a) having an interior (15), in which at least one reflective optical element (5, 6, 8, 9, 10, 14.1 to 14.6), is arranged, wherein the contaminating substance (17a) is stored in a storage device (21) in order to carry out the residual gas analysis.

Abstract: A device manufacturing method includes conditioning a beam of radiation using an illumination system. The conditioning includes controlling an array of individually controllable elements and associated optical components of the illumination system to convert the radiation beam into a desired illumination mode, the controlling including allocating different individually controllable elements to different parts of the illumination mode in accordance with an allocation scheme, the allocation scheme selected to provide a desired modification of one or more properties of the illumination mode, the radiation beam or both. The method also includes patterning the radiation beam with a pattern in its cross-section to form a patterned beam of radiation, and projecting the patterned radiation beam onto a target portion of a substrate.

Abstract: An apparatus and method for detecting extreme ultraviolet (EUV) radiation is disclosed. The apparatus includes a detector having a top surface, a layer of scintillation material on the top surface of the detector, a layer of spacer material on the layer of scintillation material, and a spectral purity filter layer on the layer of spacer material. The method includes directing the EUV radiation through the spectral purity filter layer and through the spacer material layer. The spacer material layer may be disposed between the spectral purity filter layer and a layer of scintillation material. The method further includes detecting scintillation radiation emitted by the scintillation material using the detector.

Abstract: A vacuum system for extracting a stream of a multi-phase fluid from a photo-lithography tool comprises a pumping arrangement for drawing the fluid from the tool, and an extraction tank located upstream from the pumping arrangement for separating the fluid drawn from the tool into gas and liquid phases. The pumping arrangement comprises a first pump for extracting gas from the tank, and a second pump for extracting liquid from the tank. In order to minimize any pressure fluctuations transmitted from the vacuum system back to the fluid within the tool, a pressure control system maintains a substantially constant pressure in the tank by regulating the amounts of liquid and gas within the tank.

Abstract: An actuator system is disclosed having a first actuator (XP1) and a second actuator (XP2) configured to control a relative position of optical components of a lithographic apparatus. The first actuator (XP1) is configured to provide a displacement, parallel to an actuation direction, between a mounting point of a first component of the lithographic apparatus and a second component of the lithographic apparatus. The second actuator (XP2) is configured to provide a displacement parallel to the actuation direction between a reference mass (M1) associated with the second actuator (XP2) and the mounting point of the first component of the lithographic apparatus. The second actuator (XP2) may be driven such that the displacement between the second actuator (XP2) and the reference mass (M1) increases the apparent stiffness of the first actuator (XP1).

Abstract: The invention relates to an optical system, in particular of a microlithographic projection exposure apparatus, with a polarization-influencing optical arrangement. In accordance with one aspect of the invention, this polarization-influencing optical arrangement comprises: at least one polarization-influencing optical element, which consists of an optically active material with an optical crystal axis and has a thickness profile that varies in the direction of this optical crystal axis, at least one lambda/2 plate; at least one rotator, which causes a rotation of the polarization direction of light incident on the rotator about a constant polarization rotation angle, and an actuator apparatus, by which the lambda/2 plate and the rotator can be moved independently of one another between a position within the optical beam path and a position outside of the optical beam path.

Abstract: The invention relates to a lens comprising several optical elements that are disposed in a lens housing. At least one sensor array encompassing at least one capacitive sensor unit and/or at least one inductive sensor unit is provided for determining the relative position between a first optical element and a second optical element or between a load-bearing structural element of the lens and a second optical element.

Abstract: An apparatus for mounting a pellicle onto a mask is provided. In one embodiment, the apparatus comprises a base provided with a track; a dummy plate holder coupled to the base, the dummy plate holder for receiving a dummy plate having an elevated portion on one side thereof; a mask holder for receiving a mask, the mask holder slidably coupled to the base; a pellicle holder for receiving a pellicle frame, the pellicle holder slidably coupled to the base; and drive means being adapted to drive the pellicle holder along the track towards the dummy plate holder, wherein during operation when the pellicle frame is mounted onto the mask causing the mask to contact the dummy plate, the mounting pressure in the mask is distributed by way of the elevated portion in the dummy plate, thus reducing distortion in the mask.

Abstract: This invention relates to an improved micro lithographic writer that sweeps a modulated pattern across the surface of a workpiece. The SLM disclosed works in a diffractive mode with a continuous or quasi-continuous radiation source. It uses a long and narrow SLM and takes advantage of diffractive effects along the narrow axis of the SLM to improve writing characteristics along that axis.

Abstract: A microlithographic projection exposure apparatus has a mirror array having a base body and a plurality of mirror units. Each mirror unit includes a mirror and a solid-state articulation, which has at least one articulation part that connects the mirror to the base body. A control device makes it possible to modify the alignment of the respective mirror relative to the base body. Mutually opposing surfaces of the mirror and of the base body, or of a mirror support body connected to it, are designed as corresponding glide surfaces of a sliding bearing.

Abstract: An illuminator configured to create a radiation beam for the metrology of a substrate surface includes an arc lamp, a parabolic reflector (150), a double cone (160) and a fly's eye integrator (110) in order to create a homogenized beam with a parabolic distribution.

Abstract: An imaging optical system of the far pupil type, which is applicable to an exposure apparatus, is provided with six reflecting mirrors and forms an image of a first plane on a second plane. An incident pupil of the imaging optical system is positioned on a side opposite to the imaging optical system with the first plane intervening therebetween. A condition of ?14.3<(PD/TT)/R?8.3 is fulfilled by a distance PD which is provided along an optical axis between the incident pupil and the first plane, a distance TT which is provided along the optical axis between the first plane and the second plane, and an angle of incidence R (rad) of a main light beam which comes into the first plane.

Abstract: An optical device includes a wavelength separation filter configured to separate incident light into light having a first wavelength and light having a second wavelength, the wavelength separation filter including a blazed grating whose cross-sectional shape is a saw-tooth shape formed by one-dimensionally arranging a plurality of grating elements, wherein the blazed grating is configured to exert a first power on the light having the first wavelength, of the light having the first wavelength and the light having the second wavelength, by gradually changing angles surfaces of the plurality of grating elements make with a base plane, and to exert a second power on the light having the second wavelength, of the light having the first wavelength and the light having the second wavelength, by gradually changing lengths of the plurality of grating elements along a direction in which the plurality of grating elements are arranged.

Abstract: An optical raster element for an illumination system of a microlithographic projection exposure apparatus includes an array of refractive optical elements extending on a planar or curved surface. At least two of the optical elements are arranged side by side along a reference direction with a pitch of less than 2 mm. They have a height perpendicular to the surface of less than 50 ?m and a surface profile along the reference direction which includes a central section, two transition sections adjacent the central section and two end sections adjacent the transition sections. The curvatures in the two transition sections are greater than the curvatures in the central section and the end sections. The optical raster element is intended for being used as a first channel plate in an optical integrator (honeycomb condenser) and can reduce the maximum light intensities occurring in or behind the second channel plate.

Abstract: A semiconductor laser driver includes a light detection circuit to detect a quantity of light as a detected light emission intensity and output the detected light emission intensity to the control circuit, and a control circuit to control a light emission intensity for the semiconductor laser based on the detected light emission intensity and on a predetermined light emission intensity setting value. The light detection circuit includes a photoelectric conversion element to convert the quantity of light emitted from the semiconductor laser into an electrical current and output the converted electrical current, a current magnification setting circuit to amplify the electrical current output from the photoelectric conversion element to a predetermined amplified current at one of multiple different predetermined magnifications, a detection resistor to convert the amplified current output from the current magnification setting circuit into a voltage and output the voltage as the detected light emission intensity.

Abstract: The invention relates to a lens comprising several optical elements that are disposed in a lens housing. At least one sensor array encompassing at least one capacitive sensor unit and/or at least one inductive sensor unit is provided for determining the relative position between a first optical element and a second optical element or between a load-bearing structural element of the lens and a second optical element.

Abstract: The measurement of two separately polarized beams (Ix, Iy) upon diffraction from a substrate (W) in order to determine properties of the substrate is disclosed. Circularly or elliptically polarized radiation is passed via a variable phase retarder in order to change the phase of one of two orthogonally polarized radiation beams with respect to the other of the two beams. The phase change is dependent on the wavelength of the polarized beam. The relative phases of the two radiation beams and other features of the beams as measured in a detector gives rise to properties of the substrate surface.

Abstract: System and method for applying mask data patterns to substrate in a lithography manufacturing process are disclosed. In one embodiment, the method includes providing a parallel imaging writer system which has a plurality of spatial light modulator (SLM) imaging units arranged in one or more parallel arrays; receiving a mask data pattern to be written to a substrate, processing the mask data pattern to form a plurality of partitioned mask data patterns corresponding to different areas of the substrate, assigning one or more SLM imaging units to handle each of the partitioned mask data pattern, controlling the plurality of SLM imaging units to write the plurality of partitioned mask data patterns to the substrate in parallel, controlling movement of the plurality of SLM imaging units to cover the different areas of the substrate, and controlling movement of the substrate to be in synchronization with continuous writing of the plurality of partitioned mask data patterns.

Abstract: A projection optical system for forming an image of a first surface on a second surface has a first imaging optical system and a second imaging optical system, and a folding member for guiding light from the first imaging optical system to the second imaging optical system. Every optical element having a power in the second imaging optical system is a refractive element.

Abstract: The disclosure provides an optical system and a method of characterising an optical system, such as in a microlithographic projection exposure apparatus. According to an aspect, an optical system having an optical axis (OA) includes a first element which is partially translucent for light of a working wavelength of the optical system. The first element has at least one partially reflecting first surface arranged rotated about a first axis of rotation in relation to a plane perpendicular to the optical axis (OA). The optical system also includes a second element in succession to the first element along the optical axis (OA). The second element is partially translucent for light of the working wavelength and has at least one partially reflecting second surface which is arranged rotated about a second axis of rotation in relation to a plane perpendicular to the optical axis (OA).

Abstract: A pulse stretcher includes a beam splitter configured to split an input light beam into first and second beams, a con-focal resonator including first and second con-focal mirrors, and a fold mirror. The beam splitter, con-focal resonator, and fold mirror are optically arranged such that at least a portion of the first beam is recombined with the second beam into a modified beam after an optical delay of the first beam caused by the optical arrangement. The apparatus further includes one or more optical elements in an optical path of the input light beam prior to the beam splitter such that a focal point of the first beam is formed at a distance away from the fold mirror preventing energy density-related damage to the fold mirror. The apparatus can further include one or more additional optical elements to provide re-conditioning of the modified beam. A related method is also disclosed.

Abstract: Exposure apparatus exposes a substrate by irradiating the substrate with exposure light via a projection optical system and a liquid. The exposure apparatus is provided with a liquid immersion mechanism for supplying the liquid and recovering the liquid. The liquid immersion mechanism has an inclined surface, which is opposite to a surface of the substrate and is inclined with respect to the surface of the substrate, and a liquid recovering port of the liquid immersion mechanism is formed in the inclined surface. A flat portion is provided between the substrate and the projection optical system. A liquid immersion area can be maintained to be small.

Abstract: An optical element includes first regions which reflect or transmit the light falling on the optical element. The optical element also includes second regions which are in each instance separated by a distance from a first region and which at least partially surround a first region. The second regions are designed to be at least in part electrically conductive and are electrically insulated from the first regions. The optical element includes a carrier element and at least two first regions in the form of mirror facets which are arranged on the carrier element. The second regions are arranged with a separation from the mirror facets on the carrier element and are electrically insulated against the carrier element as well as against the mirror facet. At least one mirror facet is surrounded by an electrically conductive second region.

Abstract: An optical imaging device, in particular for microlithography, including an imaging unit adapted to image an object point on an image point and a measurement device. The imaging unit has a first optical element group having at least one first optical element. The imaging device is adapted to participate in the imaging of the object point on the image point, and the measurement unit is adapted to determine at least one image defect occurring on the image point when the object point is imaged. The measuring device includes at least one measurement light source, one second optical element group and at least one detection unit. The measurement light source transmits at least one measurement light bundle. The second optical element group includes at least one optical reference element and one second optical element, the elements adapted to direct the at least one measurement light bundle to the at least one detection unit, to produce at least one detection signal.

Abstract: A projection exposure tool (10) for microlithography with a measuring apparatus (36) disposed in an optical path (28) of the projection exposure tool (10) for the locally and angularly resolved measurement of an irradiation strength distribution. The measuring apparatus (36) includes a measuring field with an arrangement (56) of focusing optical elements (42) disposed at respective individual points of the measuring field (41), a common image plane (44) for the focusing optical elements (42), a locally resolving radiation detector (46) with a recording surface (48) for the locally resolved recording of a radiation intensity, the recording surface (48) being disposed in the common image plane (44), and the radiation detector outputting radiation intensity signals for a plurality of angle values indicative of a respective angularly resolved irradiation strength distribution for at least one of the individual measuring field points.

Abstract: The invention provides a level sensor configured to determine a height level of a surface of a substrate, comprising a detection unit arranged to receive a measurement beam after reflection on the substrate, wherein the detection unit comprises an array of detection elements, wherein each detection element is arranged to receive a part of the measurement beam reflected on a measurement subarea of the measurement area, and is configured to provide a measurement signal based on the part of the measurement beam received by the respective detection element, and wherein the processing unit is configured to calculate, in dependence of a selected resolution at the measurement subarea, a height level of the measurement subarea, or to calculate a height level of a combination of multiple measurement subareas.

Abstract: A positioning system adjusts a position of an optical element within an optical device, such as a variable-zoom lens system. A frame supports the optical element, and an elongated surface of each of one or more elongated support structures supports the frame. The frame also supports one or more piezoelectric actuators that, respectively, engage one of the elongated support structures. A controller supplies a control signal to activate each of the one or more actuator modules. Upon activation, a piezoelectric element of each of the activated actuator modules applies a combination of a first force and a second force to an elongated surface of the respective elongated support structures to position the frame along the elongated surface. The combination of forces applied by the piezoelectric element advances the piezoelectric actuator module along the elongated support structure.

Abstract: A drive system determines a combination of basic patterns (type of basic patterns to be generated and the number of pulses of each basic pattern) based on design data of patterns and pattern combination information stored in a memory. Then, based on the determined result, each micro mirror of a variable molding mask is individually controlled such that a plurality of basic patterns are sequentially generated according to each of the number of pulses, and each basic pattern generated by the variable molding mask is sequentially image-formed on a plate via a projection optical system. Thus, a pattern with a desired line width corresponding to the design data is formed at a desired position on the object with a good accuracy.

Abstract: The disclosure relates to a projection exposure apparatus and an optical system, such as a projection objective or an illumination system in a projection exposure apparatus for microlithography, that includes at least one optical element and at least one manipulator having a drive device for the optical element. The drive device can have at least one movable partial element and at least one stationary partial element movable relative to one another in at least one direction of movement.

Abstract: An exposure apparatus irradiates an exposure light beam EL in a state that a space KS, between predetermined optical elements LS1 and LS2 among a plurality of optical elements included in a projection optical system, is filled with a liquid LQ. When the exposure light beam EL is not irradiated during, for example, the maintenance or the like, the liquid LQ in the space KS is substituted by a functional fluid LK different from the liquid LQ. This makes it possible to reduce any influence exerted by the liquid LQ on the exposure apparatus.

Abstract: An exposure apparatus including a projection optical system that projects an image of a mask onto a substrate held by a stage, and an atmosphere forming mechanism for forming a specific gas atmosphere between the projection optical system and the stage, wherein the atmosphere forming mechanism has a cushioning part that softens the force caused by the stage or the substrate making contact with the atmosphere forming mechanism, and that suppresses the transmission of that force to the projection optical system.

Abstract: A monitoring system for an lithographic system that may be utilized in an extreme ultraviolet lithographic system is disclosed. In a monitoring system according to the present invention, a plurality of detectors are positioned to receive radiation from a pattern of positions on a mirror that is part of the lithographic system. In some embodiments, the plurality of detectors may be positioned on the mirror. In some embodiments, the plurality of detectors may be positioned behind the mirror and receive radiation through holes formed in the mirror. In some embodiments, radiation from the pattern of positions may be reflected by facets into the detectors.

Abstract: The measurement of two separately polarized beams (Ix, Iy) upon diffraction from a substrate (W) in order to determine properties of the substrate is disclosed. Circularly or elliptically polarized radiation is passed via a variable phase retarder in order to change the phase of one of two orthogonally polarized radiation beams with respect to the other of the two beams. The phase change is dependent on the wavelength of the polarized beam. The relative phases of the two radiation beams and other features of the beams as measured in a detector gives rise to properties of the substrate surface.

Abstract: A system and method utilize a dynamically controllable optical element that receives an electrical field, which changes an index of refraction in at least one direction within the optical element. The change in index of refraction imparts a change to a beam of radiation passing through the optical element. The electric field is controlled by a feedback/control signal from a feedback system that includes a detector positioned proximate an image plane in the system. The optical element can be positioned in various places within the system depending on what light characteristics need to be adjusted, for example after an illumination system or after a light patterning system. In this manner, the optical element, under control of the dynamic electric field, can dynamically change its propagation characteristics to dynamically change either a beam of illumination from the illumination system or a patterned beam of radiation from the patterning system, such that they exhibit desired light characteristics.

Abstract: A method and system for inspecting a semiconductor wafer. The method includes providing an illumination flux through a pattern plate and a lens to a surface of a specimen to project a pattern onto the surface of the specimen. The pattern is associated with the pattern plate. Additionally, the method includes detecting the illumination flux reflected from the surface of the specimen with a detector, processing information associated with the detected illumination flux, and generating a first image based on at least information associated with the detected illumination flux. The first image includes a first image part for the pattern and a second image part for the specimen. Moreover, the method includes adjusting the lens to a state in order to achieve a first predetermined quality for the first image part, and moving the specimen to a first position.

Abstract: An apparatus which projects a pattern of an original onto a substrate by a projection optical system within a chamber to expose the substrate, comprises a measurement unit which performs measurement to calculate a deformation amount of the original, and a controller which calculates a predicted deformation amount of the original and corrects a projection magnification of the projection optical system so as to correct the predicted deformation amount, based on information representing a relationship between the deformation amount with reference to a shape of the original at a certain temperature and a time for which the original receives exposure light, a deformation amount of the original before exposure determined based on a measurement value obtained by measuring, by the measurement unit, the deformation amount of the original loaded into the chamber and unused for exposure, and the time for which the original receives the exposure light.

Abstract: A method for exposing a resist layer on a substrate to an image of a pattern on a mask is disclosed whereby, after starting exposure and before completing exposure, a controlled amount of contrast loss is introduced by a controller in the image at the resist layer by changing during exposure the position of the substrate holder. The contrast loss affects the pitch dependency of the resolution of a lithographic projection apparatus, and its control is used to match pitch dependency of resolution between different lithographic projection apparatus.

Abstract: A lithographic apparatus has an assembly to exchange optical elements in a pupil plane of its projection system. The optical elements may be pupil filters and may conform to the physical dimensions specified for a reticle standard, e.g. having sides substantially equal to 5, 6 or 9 inches.

Abstract: A lithographic apparatus includes a phase adjuster to adjust a phase of an optical wave traversing an optical element of the phase adjuster during exposure of a pattern on a substrate. In an embodiment, the optical element is a heat controllable optical element in a projection system of the lithographic apparatus. In use, the pattern is illuminated with an illumination mode including an off-axis radiation beam. This beam is diffracted into zeroth-order and first-order diffracted beams oppositely and asymmetrically inclined with respect to an optical axis. An area is identified where the first-order diffracted beam traverses the optical element. An image characteristic of an image of the pattern is optimized by calculating a desired optical phase of the first-order diffracted beam in relation to the optical phase of the zeroth-order diffracted beam. The phase adjuster is controlled to apply the desired optical phase to the first order diffracted beam.

Abstract: A detector detects liquid in the path of a projection beam or alignment beam. A controller then determines which one or more of a plurality of compensating optical elements may be provided in the optical path of the projection beam or alignment beam in order to focus the projection beam or alignment beam on the surface of the substrate. The appropriate optical element may be placed in the path of the projection beam or alignment beam directly as a final element of the projection system or alignment system respectively.

Abstract: A driving device includes a plurality of laminated units formed by alternately stacking piezoelectric element layers and electrode layers, a failure detecting unit configured to detect failure of the laminated units, a plurality of switches provided corresponding to the laminated units and configured to enable and disable current supply to the laminated units, and a driving circuit configured to supply a current for driving to a normal laminated unit of the laminated units, on the basis of an output from the failure detecting unit.

Abstract: In some embodiments, the disclosure provides a system that includes an optical element group including a plurality of optical elements configured to project a pattern of an object in an object plane to an image plane. The system also includes a unit configured to detect an image selected from an image of at least part of the projection the pattern of the object, and an image of a measurement element arranged in the area of the object. The image is created via at least some of the optical elements in the optical element group. The unit is configured to determine an imaging error in the projection of the pattern of the object from the object plane to the image plane. The device is configured to be used in microlithography.

Abstract: A method is disclosed for improving an optical imaging property, for example spherical aberration or the focal length, of a projection objective of a microlithographic projection exposure apparatus. Firsts an immersion liquid is introduced into an interspace between a photosensitive surface and an end face of the projection objective. Then an imaging property of the projection objective is determined, for example using an interferometer or a CCD sensor arranged in an image plane of the projection objective. This imaging property is compared with a target imaging property. Finally, the temperature of the immersion liquid is changed until the determined imaging property is as close as possible to the target imaging property.

Abstract: A novel arrangement and method for depositing evaporation control agents so as to coat immersion lithographic solutions which are employed on the surface of semiconductor wafers in connection with the etching of the surfaces of the wafer through the intermediary of an immersion lithographic process.