Abstract: An appearance inspection apparatus analyzes a difference in detection characteristics of detection signals obtained by detectors to flexibly meet various inspection purposes without changing a circuit or software. The apparatus includes a signal synthesizing section that synthesizes detection signals from the detectors in accordance with a set condition. An input operating section sets a synthesizing condition of the detection signal by the signal synthesizing section, and an information display section displays a synthesizing map structured based on a synthesized signal which is synthesized by the signal synthesizing section in accordance with a condition set by the input operating section.

Abstract: Apparatus for monitoring a thickness of a silicon wafer with a highly-doped layer at least at a backside of the silicon wafer is provided. The apparatus has a source configured to emit coherent light of multiple, wavelengths. Moreover, the apparatus comprises a measuring head configured to be contactlessly positioned adjacent the silicon wafer and configured to illuminate at least a portion of the silicon wafer with the coherent light and to receive at least a portion of radiation reflected by the silicon wafer. Additionally, the apparatus comprises a spectrometer, a beam splitter and an evaluation device. The evaluation device is configured to determine a thickness of the silicon wafer by analyzing the radiation reflected by the silicon wafer by an optical coherence tomography process. The coherent light is emitted multiple wavelengths in a bandwidth b around a central wavelength wc.

Abstract: Inspection of EUV patterned masks, blank masks, and patterned wafers generated by EUV patterned masks requires high magnification and a large field of view at the image plane. An EUV inspection system can include a light source directed to an inspected surface, a detector for detecting light deflected from the inspected surface, and an optic configuration for directing the light from the inspected surface to the detector. In particular, the detector can include a plurality of sensor modules. Additionally, the optic configuration can include a plurality of mirrors that provide magnification of at least 100× within an optical path less than 5 meters long. In one embodiment, the optical path is approximately 2-3 meters long.

Abstract: A surface inspection apparatus and a surface inspection method aim to securely deal with finer repetition pitch without shortening the wavelength of illumination light. To this end, the apparatus includes a unit illuminating repetitive pattern(s) formed on the substrate surface to be inspected with linearly polarized light, a unit setting to an oblique angle an angle between the direction of an intersecting line of a vibration plane of the linearly polarized light on the substrate surface and the repetition direction of repetitive pattern(s), a unit extracting a polarized light component perpendicular to the vibration plane of the linearly polarized light, from light having been emitted from the repetitive pattern(s) in a specular direction, and a unit detecting a defect of the repetitive pattern(s) according to the light intensity of the polarized light component.

Abstract: An inspection apparatus includes a work stage part, an optical module, and an optical module moving part. The work stage part receives a board. The work stage part includes work stages disposed in parallel. The optical module includes a projecting part disposed over the board, an image capturing part disposed at a side portion of the projecting part to receive the grating pattern light and capture a reflection image, and an optical path changing part changing a path of the grating pattern light and guiding the grating pattern light to the image capturing part so that the grating pattern light is downwardly incident into the image capturing part. The optical module moving part is disposed over and coupled to the optical module to move the optical module. Thus, time may be reduced and a space may be secured, required for inspecting a board.

Abstract: A defect inspecting method is provided which comprises a pre-scan defect inspecting process including a pre-scan irradiating step for casting irradiation light onto the surface of a sample, a pre-scan detecting step for detecting the scattered lights, and a pre-scan defect information collecting step for obtaining information on preselected defects present on the sample surface on the basis of the scattered lights; a near-field defect inspecting process including a near-field irradiating step in which the distance between the sample surface and a near-field head is adjusted so that the sample surface is irradiated, a near-field detecting step for detecting near-field light response, and a near-field defect information collecting step for obtaining information on the preselected defects on the basis of the near-field light response; and a merging process for inspecting defects present on the sample surface by merging the pieces of information on the preselected defects.

Abstract: Systems, methods, and apparatus are provided for determining overlay of a pattern on a substrate with a mask pattern defined in a resist layer on top of the pattern on the substrate. A first grating is provided under a second grating, each having substantially identical pitch to the other, together forming a composite grating. A first illumination beam is provided under an angle of incidence along a first horizontal direction. The intensity of a diffracted beam from the composite grating is measured. A second illumination beam is provided under the angle of incidence along a second horizontal direction. The second horizontal direction is opposite to the first horizontal direction. The intensity of the diffracted beam from the composite grating is measured. The difference between the diffracted beam from the first illumination beam and the diffracted beam from the second illumination beam, linearly scaled, results in the overlay error.

Abstract: There is provided an exposure condition determining method for determining an exposure condition for an exposure-objective substrate having a plurality of semiconductor pattern features formed by predetermined exposure on a surface thereon, the method including, irradiating an illumination light onto a surface of a substrate, which has the pattern features, detecting a diffracted light from the plurality of semiconductor pattern features of the substrate irradiated with the illumination light, and determining the exposure condition based on a variation in brightness of the detected diffracted light.

Abstract: A defect detection method comprising, irradiating light from a light source in an optical system and obtaining a plurality of optical images of a sample having a repeated pattern of a size smaller than a resolution of the optical system; while changing the conditions of the optical system, performing correction processing for the optical images with the use of at least one of a noise filter and a convolution filter; shifting a position of the other optical images based on any of the plurality of optical images, obtaining a relationship between shift amounts of the other optical images and a change of correlation of a gray scale value between the plurality of optical images, and performing positional alignment of the optical images based on the shift amount obtained when the correlation is highest, performing defect detection of the sample with the use of the optical images after the positional alignment.

Abstract: An illumination module that may include a LED driver; a group of light emitting diodes (LEDs) that comprises at least one LED; the group of LED is coupled to the LED driver; wherein the LED driver is arranged to activate the group of LEDs by driving a high current short duration driving signal; and wherein the group of LEDs is arranged to emit at least one light pulse in response to the high current short duration driving signal.

Abstract: According to one embodiment, a pattern test apparatus includes a light source configured to apply test light to a test sample, a polarizing beam splitter which reflects or transmits the test light, an imaging device which receives light which has been reflected by the test sample and transmitted through or reflected by the polarizing beam splitter, an optical system which forms a Fourier transform plane of the test sample between the test sample and the polarizing beam splitter, and a polarizing controller disposed in the Fourier transform plane. The polarizing controller includes a first region which lets the test light through, and a second region which is greater than the first region and lets the light reflected by the test sample through, and the each regions have different retardation quantities.

Abstract: The invention relates to a device for inspecting the edge of semiconductor wafers, including a chromatic confocal microscope with a lighting pathway and an analysis pathway, the lighting pathway including a polychromatic light source, a slot and an axial chromatism objective lens comprising a lens at least made of a material having an Abbe number lower than 50, and the analysis pathway includes said objective lens, a chromatic filtering slot with a light intensity sensor in that order, the slot of the lighting pathway and the slot of the analysis pathway being provided at substantially the same optical distance from the edge of the wafer to be inspected.

Abstract: An apparatus and method for optically inspecting an object, comprising an object carrier for carrying the object, a pattern generating unit for illuminating the object with a measurement pattern, an image capture unit for capturing a number of images of the object, imaging optics for influencing a light beam path between the object and the image capture unit, and a data processing unit for determining at least one property of the object on the basis of the captured images. The apparatus can be set to at least a first operating distance and a second operating distance, and furthermore has a diffusing unit, which can be changed between an active state, in which the diffusing unit influences the light beam path in front of the pattern generating unit and an inactive state, in which the diffusing unit does not influence the light beam path in front of the pattern generating unit.

Abstract: In order to enable an evaluation for changing parameters without stopping the inspection of a magnetic disk in production lines, the surface inspecting apparatus illuminates a sample with light while rotating the sample and moving the same in a direction perpendicular to the axis of rotation, detects light reflected/scattered in a first direction from the sample illuminated with the light to obtain a first detection signal, detects light reflected/scattered in a second direction from the sample illuminated with the light to obtain a second detection signal, and a detection of a defect on the sample by processing the first detection signal and the second detection signal, based on a first inspection recipe and a detection of a defect on the sample by processing the first detection signal and the second detection signal, based on a second inspection recipe are performed to detect a defect on the sample.

Abstract: A system for inspecting a depth relative to a layer using a sensor with a fixed focal plane. A focus sensor senses the surface of the substrate and outputs focus data. In setup mode the controller scans a first portion of the substrate, receives the focus data and XY data, and stores correlated XYZ data for the substrate. In inspection mode the controller scans a second portion of the substrate, receives the focus data and XY data, and subtracts the stored Z data from the focus data to produce virtual data. The controller feeds the virtual data plus an offset to the motor for moving the substrate up and down during the inspection, thereby holding the focal plane at a desired Z distance.

Abstract: The present invention provides an inspection method for inspecting defects of wafer surface. The method includes: encircling peripheral region of the wafer surface by a first light source set and a second light source set; using a control module to control the first light source set and the second light source set to irradiate the light alternately from different directions; using an image pick-up module to receive a scattered light image during each time when the first light source set or the second light source set irradiates the light on the wafer surface; and then using a process module to obtain an enhanced and clear defect image of wafer surface by processing each of the scattered light images.

Abstract: In the inspection of a defect in a fine concave-convex pattern, a spectral waveform of a detection area of an inspection object is detected, area determination as to which area section determined by a pattern type of the inspection object the detection area belongs to is performed, a feature calculation equation and a determination index value which correspond to a determined area section and vary according to defect type is selected, feature calculation on the spectral waveform data in accordance with the selected feature calculation equation is performed, and a calculated feature value and the selected determination index value are compared to perform determination processing according to defect type.

Abstract: A method of detecting a defect, including the steps of: illuminating step for illuminating a sample with a light; detecting step for detecting light from the specimen which is illuminated by the light and forming an image by processing the detected light; processing step for extracting a defect candidate by processing the image of the sample formed in the detecting step and determining an inspection condition by using images including the image of the sample acquired in the detecting step, a partial image including the extracted defect candidate and a reference image which corresponds to the partial image including the defect candidate.

Abstract: An inspection system and a method for defect detection, the method includes: generating a first beam that includes a near infrared spectral component and a visible light component; directing at least the near infrared spectral component towards a backside of an inspected object, the backside includes first elements made of a substantially transparent to near infrared radiation first material and second elements that are made of a second material arranged to reflect near infrared radiation; directing, towards a sensor, a near infrared spectral component of a second beam generated from the illuminating of the inspected object; wherein the sensor is sensitive to visible light radiation and to near infrared radiation; generating, by the sensor, detection signals that are responsive to the near infrared component of the second beam; and detecting at least one attribute of at least the second elements by processing the detection signals.

Abstract: In a method and apparatus for optically inspecting a magnetic disk, irradiating the surface of the sample with a light by rotating and moving the sample in the direction orthogonal to the center axis of the rotation, detecting the regular reflection light from the surface of the sample, detecting the scattered light in the vicinity of the regular reflection light from the surface of the sample by separating the scattered light from the regular reflection light, detecting the scattered light scattered in the direction at a higher angle with respect to the normal direction of the surface of the sample, and detecting the defects by processing the detection signal of the regular reflection light, the detection signal of the scattered light in the vicinity of the regular reflection light, and the detection signal of the scattered light in the high angle direction.

Abstract: An inspection system with selectable apodization includes an illumination source configured to illuminate a surface of a sample, a detector configured to detect at least a portion of light emanating from the surface of the sample, the illumination source and the detector being optically coupled via an optical pathway of an optical system, a selectably configurable apodization device disposed along the optical pathway, wherein the apodization device includes one or more apodization elements operatively coupled to one or more actuation stages configured to selectably actuate the one or more apodization elements along one or more directions, and a control system communicatively coupled to the one or more actuation and configured to selectably control apodization of illumination transmitted along the optical pathway by controlling an actuation state of the one or more apodization elements.

Abstract: Setting a spatial filter requires repeatedly confirming a scan image through visual inspection by an operator and adjusting the spatial filter. A setting state is also dependent on the operator. Therefore, in the present invention, a scattered light image (beam image) and a diffracted light image (Fourier image) are simultaneously observed, and an intensity profile of the scattered light image (beam image) and an intensity profile of the diffracted light image (Fourier image) are simultaneously monitored. A field of view of a diffracted light image is scanned with only one spatial filter, and a state change with respect to the intensity profiles in the absence of insertion of the spatial filter is detected. A setting condition for a spatial filter is determined on the basis of the detected state change.

Abstract: A method of forming a standard mask for an inspection system is provided, the method comprising providing a substrate within a chamber, and providing a tetraethylorthosilicate (TEOS) precursor within the chamber. The method further includes reacting the TEOS precursor with an electron beam to form silicon oxide particles of controlled size at one or more controlled locations on the substrate, the silicon oxide particles disposed as simulated contamination defects.

Abstract: In order to enable inspections to be conducted at a sampling rate higher than the pulse oscillation frequency of a pulsed laser beam emitted from a laser light source, without damaging samples, a defect inspection method is disclosed, wherein: a single pulse of a pulsed laser beam emitted from the laser light source is split into a plurality of pulses; a sample is irradiated with this pulse-split pulsed laser beam; scattered light produced by the sample due to the irradiation is focused and detected; and defects on the sample are detected by using information obtained by focusing and detecting the scattered light from the sample. Said defect inspection method is configured such that the splitting a single pulse of the pulsed laser beam into a plurality of pulses is controlled in such a manner that the peak values of the split pulses are substantially uniform.

Abstract: A surface inspecting apparatus rotates a semiconductor wafer 100 (inspection object) as a main scan while translating the semiconductor wafer 100 as an auxiliary scan, illuminates the surface of the semiconductor wafer 100 with illuminating light 21, thereby forms an illumination spot 3 as the illumination area of the illuminating light 21, detects scattered or diffracted or reflected light from the illumination spot, and detects a foreign object existing on the surface of the semiconductor wafer 100 or in a part of the semiconductor wafer 100 in the vicinity of the surface based on the result of the detection. In the surface inspecting apparatus, the translation speed of the auxiliary scan is controlled according to the distance from the rotation center of the semiconductor wafer 100 in the main scan to the illumination spot.

Abstract: Disclosed are systems and methods for time differential reticle inspection. Contamination is detected by, for example, determining a difference between a first signature of at least a portion of a reticle and a second signature, produced subsequent to the first signature, of the portion of the reticle.

Abstract: A method and an apparatus for inspecting a substrate are provided. The method includes irradiating light to a semiconductor device formed on a substrate and detecting light reflected from the semiconductor device in order to inspect a defect of the semiconductor device. An irradiation position of the light may gradually move from a semiconductor device formed at the center of the substrate to a semiconductor device formed on an edge of the substrate. at least one semiconductor device formed on a substrate, a light irradiating member which irradiates light onto the semiconductor surface formed on the substrate; a light detecting member which detects light reflected from the semiconductor device in order to inspect the semiconductor device for defects; and an irradiation position of the light gradually moves from a semiconductor device formed at the center of the substrate to a semiconductor device formed on an edge of the substrate.

Abstract: The present invention provides an inspection apparatus having a high throughput and high sensitivity with respect to a number of various manufacturing processes and defects of interest in inspection of a specimen such as a semiconductor wafer on which a pattern is formed. The apparatus illuminates with light the specimen having the pattern formed thereon, forms an image of the specimen on an image sensor through a reflective optics, and determines the existence/nonexistence of a defect. The reflective optics has a conjugate pair of Fourier transform optics. An aberration of the reflective optics is corrected off-axis. The reflective optics has a field of view in non-straight-line slit form on the specimen surface. Also, the optics is of a reflection type, includes a conjugate pair of Fourier transform optics and has a field of view in non-straight-line slit form. An optimum wavelength band is selected according to the specimen (FIG. 1).

Abstract: Disclosed are methods and apparatus for performing inspection or metrology of a semiconductor device. The apparatus includes a plurality of laser diode arrays that are configurable to provide an incident beam having different wavelength ranges. The apparatus also includes optics for directing the incident beam towards the sample, a detector for generating an output signal or image based on an output beam emanating from the sample in response to the incident beam, and optics for directing the output beam towards the detector. The apparatus further includes a controller for configuring the laser diode arrays to provide the incident beam at the different wavelength ranges and detecting defects or characterizing a feature of the sample based on the output signal or image.

Abstract: A gantry apparatus includes a structure to couple and support an optical system has enhanced rigidity, which minimizes deformation of the structure even if a plurality of optical systems is coupled to the structure. The gantry apparatus includes an optical system, a drive device to drive the optical system, and a structure to couple and support the drive device. The structure includes a plurality of first plates arranged parallel to one another, and a plurality of second plates intersecting the plurality of first plates to define receptive corridors, each of which receives the drive device.

Abstract: Wafer breakage is a serious problem in the photovoltaic industry because a large fraction of wafers (between 5 and 10%) break during solar cell/module fabrication. The major cause of this excessive wafer breakage is that these wafers have residual microcracks—microcracks that were not completely etched. Additional propensity for breakage is caused by texture etching and incomplete edge grinding. To eliminate the cost of processing the wafers that break, it is best to remove them prior to cell fabrication. Some attempts have been made to develop optical techniques to detect microcracks. Unfortunately, it is very difficult to detect microcracks that are embedded within the roughness/texture of the wafers. Furthermore, even if such detection is successful, it is not straightforward to relate them to wafer breakage. We believe that the best way to isolate the wafers with fatal microcracks is to apply a stress to wafers—a stress that mimics the highest stress during cell/module processing.

Abstract: The present invention suppresses reductions in inspection precision caused by reflected and scattered light produced by wafer holders. In a wafer holder (10) that has protruding support parts (11) that contact and support a wafer and groove parts (12) that are separated from the wafer, the protruding support parts (11) are extended continuously from a part that supports one edge of the wafer to a part that supports the other edge of the wafer. Connecting parts (13) that connect adjacent protruding support parts (11) are provided in each of the vicinity of the parts supporting the one edge and the vicinity of the parts supporting the other edge.

Abstract: There is provide an inspection apparatus configured to detect a change in shape of a pattern in the depth direction o the pattern, the apparatus including: an illumination section 20 which illuminates a wafer 5 having a periodic pattern with an illumination light having transmittance with respect to the wafer 5; a reflected diffraction light detecting section 30 which outputs a first detection signal by receiving a reflected diffraction light generated by the pattern on a surface, of the wafer, on an illumination side illuminated with the illumination light; a transmitted diffraction light detecting section 40 which outputs a second detection signal by receiving a transmitted diffraction light generated by the pattern to a back surface, of the wafer, opposite to the illumination side; and a signal processing section 51 which detects a state of the pattern based on at least one of the first and second detection signals.

Abstract: In an inspection apparatus that inspects both surfaces of a patterned media disk, to perform inspection while maintaining a high level of throughput, a patterned media disk inspection apparatus of the present invention includes an optical inspection unit, a table unit that includes plural substrate rotation drive units on which a substrate is mounted and rotated and rotates and conveys the substrates mounted on the substrate rotation drive units between a position at which the substrate is inspected by the optical inspection unit and a position at which the substrate is taken out and supplied, a substrate reversing unit, a cassette unit that accommodates substrates, and a substrate handling unit that takes out an uninspected substrate from the cassette unit and supplies the uninspected substrate to the table unit, and further stores a substrate, both surfaces of which have already been inspected, in the cassette unit.

Abstract: Reliability of a semiconductor device is improved. In a flatness inspection of BGA (semiconductor device), there is formed a flatness standard where a permissible range in the direction of (+) of flatness at normal temperature is smaller than a permissible range in the direction of (?). With use of the above flatness standard, a flatness inspection of the semiconductor device at normal temperature is performed to determine whether the mounted item is non-defective or defective. With the above process, defective mounting caused by a package warp when heated during reflow soldering etc. is reduced and reliability of BGA is improved. At the same time, flatness management of a substrate-type semiconductor device with better consideration of a mounting state can be performed.

Abstract: A defect inspection method includes an illumination light adjustment step of adjusting light emitted from a light source, an illumination intensity distribution control step of forming light flux obtained in the illumination light adjustment step into desired illumination intensity distribution, a sample scanning step of displacing a sample in a direction substantially perpendicular to a longitudinal direction of the illumination intensity distribution, a scattered light detection step of counting the number of photons of scattered light emitted from plural small areas in an area irradiated with illumination light to produce plural scattered light detection signals corresponding to the plural small areas, a defect judgment step of processing the plural scattered light detection signals to judge presence of a defect, a defect dimension judgment step of judging dimensions of the defect in each place in which the defect is judged to be present and a display step of displaying a position on sample surface and the

Abstract: The disclosure is directed to a system and method for inspecting a sample by illuminating the sample at a plurality of different angles and independently processing the resulting image streams. Illumination is directed through a plurality of pupil apertures to a plurality of respective field apertures so that the sample is imaged by portions of illumination directed at different angles. The corresponding portions of light reflected, scattered, or radiated from the surface of the sample are independently processed. Information associated with the independently processed portions of illumination is utilized to determine a location of at least one defect of the sample. Independently processing multiple image streams associated with different illumination angles allows for retention of frequency content that would otherwise be lost by averaging information from multiple imaging angles.

Abstract: A defect inspection method wherein illumination light having a substantially uniform illumination intensity distribution in a certain direction on the surface of a specimen is radiated onto the surface of the specimen; wherein multiple components of those scattered light beams from the surface of the specimen which are emitted mutually different directions are detected, thereby obtaining corresponding multiple scattered light beam detection signals; wherein the multiple scattered light beam detection signals is subjected to processing, thereby determining the presence of defects; wherein the corresponding multiple scattered light detecting signals is processed with respect to all of the spots determined to be defective by the processing, thereby determining the sizes of defects; and wherein the defect locations on the specimen and the defect sizes are displayed with respect to all of the spots determined to be defective by the processing.

Abstract: When examination at a scan speed equal to or higher than the line rate of the sensor such as a TDI sensor is carried out, the line rate of the TDI sensor is asynchronous with the scan speed, and the image is blurred. Therefore, a TDI sensor cannot be used at a scan speed equal to or higher than the line rate of the TDI sensor. This problem has not been considered. To solve the problem, high-speed examination irrespective of the line rate of the TDI sensor is enabled. To control the line rate of the TDI sensor and stage scan speed asynchronously and to solve the problem of the image addition variation due to the charge accumulation of the TDI sensor, the object to be examined is irradiated with thin-line illumination, and only a given pixel line of the TDI sensor is made to receive light scattered by the object to be examined. The aspect ratio of the detection pixel size can be controlled by the speed ratio between the line rate of the TDI sensor and the stage scan speed.

Abstract: A defect inspection method includes: illuminating an area on surface of a specimen as a test object under a specified illumination condition; scanning a specimen to translate and rotate the specimen; detecting scattering lights to separate each of scattering lights scattered in different directions from the illuminated area on the specimen into pixels to be detected according to a scan direction at the scanning a specimen and a direction approximately orthogonal to the scan direction; and processing to perform an addition process on each of scattering lights that are detected at the step and scatter approximately in the same direction from approximately the same area of the specimen, determine presence or absence of a defect based on scattering light treated by the addition process, and compute a size of the determined defect using at least one of the scattering lights corresponding to the determined defect.

Abstract: In semiconductor surface inspection apparatus, foreign matter that sticks to the wafer can reduce the quality of the wafer. The present invention is directed to improving the internal cleanliness of the apparatus. Specifically, during rotation of a semiconductor wafer, foreign matter suspended in an atmosphere surrounding the wafer is attracted to a central section of the wafer, and that while heading from the central section of the wafer, towards an outer edge thereof, the foreign matter is most likely to stick to the wafer. In conventional techniques, sufficient consideration is not given to such likelihood of foreign matter sticking This invention supplies a medium from two directions to an inner circumferential section of a substrate. In accordance with the invention, foreign matter that sticks to a wafer can be reduced more significantly than in the conventional techniques.

Abstract: In a defect inspection method and an apparatus of the same, for enabling to conduct an inspection of fine defects without applying thermal damages on a sample, the following steps are conducted: mounting a sample on a rotatable table to rotate; irradiating a pulse laser emitting from a laser light source upon the sample rotating; detecting a reflected light from the sample, upon which the pulse laser is irradiated; detecting the reflected light from the sample detected; and detecting a defect on the sample through processing of a signal obtained through the detection, wherein irradiation of the pulse laser emitting from the laser light source upon the sample rotating is conducted by dividing the one pulse emitted from the laser light source into plural numbers of pulses, and irradiating each of the divided pulse lasers upon each of separate positions on the sample, respectively.

Abstract: Method and apparatus for detection and characterization of defects, and working order assessment of fab processing operation.

Abstract: The invention provides an optical surface defect inspection apparatus and an optical surface defect inspection method that reduces an influence from a dead zone of a sensor array and that reduces the influence from reduction of a detected light amount in a case of extending over light receiving elements, thereby enabling a defect inspection with high sensitivity. According to the invention, a subject is irradiated with an inspection light, an image is formed on the sensor array including the light receiving elements separated by the dead zone insensitive to light scattered by a surface of the subject and arranged in a plurality of lines, outputs from two adjacent light receiving elements are added, and a defect on the surface of the subject is inspected for based on the result of the addition.

Abstract: When the intensity of scattering light from a defect on a sample becomes very low according to the diameter of the defect, the dark noise from a sensor device itself accounts which a large proportion of the detected signal outputted from the sensor and thus it is difficult to detect minute defects. Furthermore, since a laser light source is pulsed into oscillation, pulse components from the laser light source are superimposed on the detected signal outputted from the sensor, and therefore it is difficult to detect defects with high accuracy.

Abstract: A vision system is provided to determine a positional relationship between a semiconductor wafer on a platen and an element on a processing machine, such as a printing screen, on a remote side of the semiconductor wafer from the platen. A source directs infrared light through an aperture in the platen to illuminate the semiconductor wafer and cast a shadow onto the element adjacent an edge of the semiconductor wafer. A video camera produces an image using light received from the platen aperture, wherein some of that received light was reflected by the wafer. The edge of the semiconductor wafer in the image is well defined by a dark/light transition.

Abstract: A detecting method for a substrate includes the following steps: positioning the substrate; optically scanning the substrate and determining whether there is any defect on the substrate, if there is at least one defect on the substrate, determining the position of the at least one defect; obtaining a plurality of size images of a plurality of measuring areas of the substrate and transferring the size images; and calculating a width of each line on the substrate, and simultaneously obtaining a defection image of the at least one defect. The present disclosure further provides a detecting device for the substrate. With the detecting method and device, the defect detecting and measurement of the width of each line can be carried out simultaneously, which reduces the manufacturing time of the substrate and improves the manufacturing efficiency thereof.

Abstract: Surface states have traditionally been measured with apparatuses such as an atomic force microscope (AFM), and these measurements have been high in resolution but low in speed. In conventional apparatuses for inspecting the foreign matter sticking to a wafer surface, and for inspecting defects present on the wafer surface, the inspection has had a tendency to be restricted in a region of the highest noise level arising from the roughness of the surface, the surface state, and/or crystal orientations, and thereby to reduce detection sensitivity in a region of lower noise levels. In these conventional techniques, signal processing of the light scattered from the object to be inspected has been based only upon the intensity of the light. This invention acquires three-dimensional data by, during such signal processing, adding detection intervals and the frequency of detection, as well as the intensity of light.

Abstract: The defect inspecting apparatus is capable of easily performing adjustment with a change of an elevation angle of illumination to a substrate to be inspected, while being low in cost. A plane parallel plate and a cylindrical lens supported by a lens holder are symmetrically disposed at the same tilt angle ? with respect to a horizontal plane. A shift in optical axis at a focal position of light (101) with the rotation of the cylindrical lens can be prevented from occurring. The light can be rotated with a motor and a belt by a rotating mechanism, while allowing the optical axes of the light to match each other at the same focal position. The lens holder and the rotating mechanism are connected to a vertically moving mechanism and moved along a guide of the vertically moving mechanism to thereby adjust the focal position of the cylindrical lens.

Abstract: A method and apparatus of inspecting a sample, in which the sample is inspected under a plurality of inspection conditions, and inspection data obtained by inspecting the sample under each of the plurality of inspection conditions and position information on the sample of the inspection date in correspondence with the respective inspection conditions, are stored. The inspection data for each of the plurality of inspection conditions is against each other by the use of the position information on the sample to determine a position to be inspected in detail, and an image of the sample at a position to be inspected in detail is obtained. The obtained image is classified, the inspection condition of the sample by the use of information of classification of the image is determined.