Abstract: A reflective optical element for a microlithographic projection exposure apparatus, a mask inspection apparatus or the like. The reflective optical element has an optically effective surface, an element substrate (12, 32, 42, 52), a reflection layer system (14, 34, 44, 54) and at least one deformation reduction layer (15, 35, 45, 55, 58). When the optically effective surface (11, 31, 41, 51) is irradiated with electromagnetic radiation, a maximum deformation level of the reflection layer system is reduced in comparison with a deformation level of an analogously constructed reflective optical element without the deformation reduction layer.

Abstract: The invention provides a new dual-sided Moiré wafer analysis system that integrates wafer flatness measurement capability with wafer surface defect detection capability. The invention may be, but is not necessarily, embodied in methods and systems for simultaneously applying phase shifting reflective Moiré wafer analysis to the front and back sides of a silicon wafer and comparing or combining the front and back side height maps. This allows wafer surface height for each side of the wafer, thickness variation map, surface nanotopography, shape, flatness, and edge map to be determined with a dual-sided fringe acquisition process. The invention also improves the dynamic range of wafer analysis to measure wafers with large bows and extends the measurement area closer to the wafer edge.

Abstract: To prevent overlooking of a defect due to reduction in a defect signal, a defect inspection device is configured such that: light is irradiated onto an object to be inspected on which a pattern is formed; reflected, diffracted, and scattered light generated from the object by the irradiation of the light is collected, such that a first optical image resulting from the light passed through a first spatial filter having a first shading pattern is received by a first detector, whereby a first image is obtained; the reflected, diffracted, and scattered light generated from the object is collected, such that a second optical image resulting from the light passed through a second spatial filter having a second shading pattern is received by a second detector, whereby a second image is obtained; and the first and second images thus obtained are processed integrally to detect a defect candidate(s).

Abstract: A method and an inspection system that exhibiting speckle reduction characteristics includes a light source arranged to generate input light pulses, and diffuser-free speckle reduction optics that include a beam splitter, for splitting an input light pulse from the light source into multiple light pulses that are oriented at angles in relation to each other when exiting the beam splitter, and at least one optical element for directing the multiple light pulses to impinge on an inspected object at different angles.

Abstract: A method of automatic optical self-contained inspection for detection of macro defects of sub-pixel defect size in pattern wafers and non-pattern wafers is based on surface light scattering color-intensity computerized analysis. The method includes setting-up initial calibration and deriving correction data. A wafer image is acquired and rendered and compensated for lighting intensity and optical sensor sensitivity color spectra biases and spatial variances prior to displaying the inspection results.

Abstract: Metrology tool stage configurations and respective methods are provided, which comprise a pivoted connection arranged to receive a wafer and enable rotation thereof about a pivot; a radial axis arranged to radially move the rotatable pivoted connection attached thereto; and optics having a stationary part configured to generate a collimated illumination beam. For example, the optics may be stationary and the radial axis may be centrally rotated to enable stage operation without requiring additional space for guiding systems. In another example, a part of the optics may be rotatable, when configured to receive illumination via a mechanically decoupled or empty region, receive power and control wirelessly and deliver data wirelessly. The disclosed configurations provide more compact and more robust stages which efficiently handle large wafers. Stage configurations may be horizontal or vertical, the latter further minimizing the tool's footprint.

Abstract: The present invention discloses a pattern matching method, which is used in measurement process for line width measuring machine, comprising: reading a standard pattern used for matching on the at least one predetermined position of a measured sample; respectively comparing each standard pattern of the measured sample with prestored multiple designed original images corresponding to the standard pattern; determining that the pattern matching is successful if the standard pattern on the measured sample successfully compares with at least one designed original image, and proceeding with the subsequent line width measurement process; otherwise, determining that the pattern matching is failed. The present invention also discloses a corresponding pattern matching method and a line width measuring machine. According to the embodiment of the present invention, it can improve the accuracy and the success rate of the pattern matching when measuring the line width.

Abstract: According to one embodiment, a method of inspecting a mask substrate for defects, includes acquiring a defocus image of a partial region of a mask substrate using a dark-field optical system, acquiring a just-focus image of the partial region using the dark-field optical system, generating a set composed of first signals obtained from the defocus image and having signal intensities equal to or higher than a first threshold value, excluding, from the set, the first signals pertaining to parts in which signal intensities of signals obtained from the just-focus image are equal to or higher than a second threshold value, determining an inspection threshold value for signal intensities, on the basis of the first signals not excluded from, and remaining in, the sea.

Abstract: Wafer inspection method to perform wafer inspection based on photo map information. The wafer inspection method may include: detecting a sample center location on a wafer; compensating the detected sample center location to a compensated center location based on photo map information; and detecting defective dies included in the wafer based on the compensated center location.

Abstract: Light that is scattered by a defect on a wafer is very weak, and a PMT and an MPPC are used as detection methods for measuring the weak light with high speed and sensitivity. The methods have a function of photoelectronically converting the weak light and multiplying an electron, but have a problem in that a signal light is lost and an S/N ratio is reduced because the quantum efficiency of the photoelectron conversion is as low as 50% or less. Direct light is amplified prior to the photoelectron conversion. The optical amplification is an amplification method in which the signal light and light of pump light are introduced into a rare-earth doped fiber, a stimulated emission is caused, and the signal light is amplified. In the present invention, the optical amplification is used. The amplification factor is changed according to various conditions.

Abstract: Systems and methods for determining one or more parameters of a wafer inspection process are provided. One method includes aligning optical image(s) of an alignment target to their corresponding electron beam images generated by an electron beam defect review system. The method also includes determining different local coordinate transformations for different subsets of alignment targets based on results of the aligning. In addition, the method includes determining positions of defects in wafer inspection system coordinates based on coordinates of the defects determined by the electron beam defect review system and the different local coordinate transformations corresponding to different groups of the defects into which the defects have been separated. The method further includes determining one or more parameters for an inspection process for the wafer based on defect images acquired at the determined positions by a wafer inspection system.

Abstract: A surface scanning wafer inspection system with independently adjustable scan pitch and associated methods of operation are presented. The scan pitch may be adjusted independently from an illumination area on the surface of a wafer. In some embodiments, scan pitch is adjusted while the illumination area remains constant. For example, defect sensitivity is adjusted by adjusting the rate of translation of a wafer relative to the rate of rotation of the wafer without additional optical adjustments. In some examples, the scan pitch is adjusted to achieve a desired defect sensitivity over an entire wafer. In other examples, the scan pitch is adjusted during wafer inspection to optimize defect sensitivity and throughput. In other examples, the scan pitch is adjusted to maximize defect sensitivity within the damage limit of a wafer under inspection.

Abstract: There is provided an inspection apparatus which inspects a substrate supporting portion configured to support a substrate during an exposure performed by an exposure apparatus. The apparatus includes: a irradiation unit configured to irradiate, with an illumination light beam, a surface of the substrate on which a pattern has been formed by an exposure by the exposure device; a detecting unit configured to detect reflected light from a pattern in the irradiated surface; a focusing state computation unit connected to the detection unit and configured to determine a focusing state of the pattern of the substrate, based on a detection result of the reflected light beam detected by the detection unit; and an inspection unit connected to the focusing state computation unit and configured to inspect the substrate supporting portion based on the focusing state determined by the focusing state computation unit.

Abstract: In order to enable inspections to be conducted at a sampling rate higher than the pulse oscillation frequency of a pulsed laser beam emitted from a laser light source, without damaging samples, a defect inspection method is disclosed, wherein: a single pulse of a pulsed laser beam emitted from the laser light source is split into a plurality of pulses; a sample is irradiated with this pulse-split pulsed laser beam; scattered light produced by the sample due to the irradiation is focused and detected; and defects on the sample are detected by using information obtained by focusing and detecting the scattered light from the sample. Said defect inspection method is configured such that the splitting a single pulse of the pulsed laser beam into a plurality of pulses is controlled in such a manner that the peak values of the split pulses are substantially uniform.

Abstract: Methods and systems for setting up a wafer inspection process using programmed defects are provided. One method includes altering a design for a dummy area of a production chip such that printing of the dummy area on a wafer results in printing of a variety of defects. Two or more of the defects have different types, one or more different characteristics, different contexts in the design, or a combination thereof. The dummy area printed on a wafer may then be scanned with two or more optical modes of an inspection system to determine which of the optical mode(s) are better for defect detection. Additional areas of the wafer may then be scanned with the optical mode(s) that are better for defect detection to determine noise information. The noise information may then be used to select one or more of the optical modes for use in a wafer inspection process.

Abstract: An inspection apparatus is capable for inspecting at least one light-emitting device. The inspection apparatus includes a working machine and an inspection light source. The inspection light source is disposed on the working machine and located above the light-emitting device. A dominant wavelength of the inspection light source is smaller than a dominant wavelength of the light-emitting device so as to excite the light-emitting device and get an optical property of the light-emitting device.

Abstract: An inspection apparatus is capable of inspecting a light-emitting diode (LED). The inspection apparatus includes a reflecting cover, a base plate, a light-collecting unit and at least one inspection light source. An enclosed space is defined by the base plate and the reflecting cover having an opening. The LED is disposed on the base plate and located in the enclosed space. The light-collecting unit is disposed above the LED and in the enclosed space. A vertical distance from the light-collecting unit to the LED is H, a width of the opening of the reflecting cover is W, and H/W=0.05 to 10. The inspection light source is in the enclosed space. An inspection light emitted from the inspection light source is reflected by the reflecting cover and then emitted into the LED. A dominant wavelength of the inspection light source is smaller than that of the LED.

Abstract: Disclosed are methods and apparatus for detecting defects in a semiconductor sample having a plurality of identically designed areas. An inspection tool is used to construct an initial focus trajectory for a first swath of the sample. The inspection tool is then used to scan the first swath by following the initial focus trajectory for the first swath while collecting autofocus data. A z offset measurement vector for each identically designed area in the first swath is generated based on the autofocus data. A corrected z offset vector is constructed for inspection of the first swath with the inspection tool. Constructing the corrected z offset vector is based on combining the z offset measurement vectors for two or more of the identically designed areas in the first swath so that the corrected z offset vector specifies a same z offset for each set of same positions in the two or more identically designed areas.

Abstract: A semiconductor inspection apparatus (100) is an apparatus for inspecting a semiconductor device. The semiconductor inspection apparatus (100) includes a pulsed laser light source (14) for emitting pulsed laser light (2) toward a substrate (1) with a semiconductor device formed thereon, an electromagnetic wave pulse application part (18) for applying a reverses-biasing electromagnetic wave pulse (4) for applying a reverse bias to an application position (10) which receives the pulsed laser light (2), and a detection part (17) for detecting an electromagnetic wave pulse (3) emitted from the application position (10) in response to the application of the pulsed laser light (2).

Abstract: A marker which is a reference of a coordinate position defining a region of a chip that is manufactured in a semiconductor substrate is formed. A crystal defect on the semiconductor substrate is detected. The coordinate position of the detected crystal defect is detected on the basis of the marker. Therefore, it is possible to detect the position of a semiconductor chip including the crystal defect among the semiconductor chips manufactured on the semiconductor substrate. As a result, it is possible to easily detect the position of the semiconductor device including the position of the crystal defect on the semiconductor substrate.

Abstract: A surface defect inspection apparatus and method for irradiating a beam multiple times to a same region on a surface of an inspection sample, detecting each scattered light from the same region by detection optical systems individually to produce plural signals, and wherein irradiating the beam includes performing a line illumination of the beam on a line illumination region of the sample surface. The line illumination region is moved in a longitudinal direction at a pitch shorter than a length of the line illumination region in the longitudinal direction.

Abstract: A defect inspection method includes: illuminating an area on surface of a specimen as a test object under a specified illumination condition; scanning a specimen to translate and rotate the specimen; detecting scattering lights to separate each of scattering lights scattered in different directions from the illuminated area on the specimen into pixels to be detected according to a scan direction at the scanning a specimen and a direction approximately orthogonal to the scan direction; and processing to perform an addition process on each of scattering lights that are detected at the step and scatter approximately in the same direction from approximately the same area of the specimen, determine presence or absence of a defect based on scattering light treated by the addition process, and compute a size of the determined defect using at least one of the scattering lights corresponding to the determined defect.

Abstract: In conventional technologies in surface measurement and defect inspection, considerations are not made for the following points: (1) coarseness of resolution of spatial frequency; (2) variation of detection signal resulting from anisotropy of microroughness; and (3) variation of background signal resulting from anisotropy of microroughness. The present invention is characterized by acquiring a feature quantity about the anisotropy of the microroughness of the substrate surface. Further, the present invention is characterized by acquiring a surface state in consideration of the anisotropy of the microroughness of the substrate surface. Further the present invention is characterized by detecting a defect over the substrate in consideration of the anisotropy of the microroughness of the substrate surface.

Abstract: Methods and systems for reconfiguring an aperture of an optical inspection system are presented. A programmable aperture system includes a two dimensional array of mechanical pixels that selectively block light passing through the aperture. An array of linear guiding elements is aligned parallel to one another, and each row of mechanical pixels is supported by a corresponding linear guiding element. Each mechanical pixel is configured to slide along the corresponding linear guiding element when pushed by an actuator subsystem. The actuator subsystem repositions one or more of the mechanical pixel elements to change the shape of the aperture. The actuator subsystem is configured to selectively engage one or more mechanical pixel elements and translate the one or more mechanical pixel elements along corresponding linear guiding elements to a new position.

Abstract: In one embodiment, a semiconductor target for detecting overlay error between two or more successive layers of a substrate or between two or more separately generated patterns on a single layer of a substrate is disclosed. The target comprises at least a plurality of a plurality of first grating structures having a course pitch that is resolvable by an inspection tool and a plurality of second grating structures positioned relative to the first grating structures. The second grating structures have a fine pitch that is smaller than the course pitch, and the first and second grating structures are both formed in two or more successive layers of a substrate or between two or more separately generated patterns on a single layer of a substrate. The first and second gratings have feature dimensions that all comply with a predefined design rules specification.

Abstract: When the intensity of scattering light from a defect on a sample becomes very low according to the diameter of the defect, the dark noise from a sensor device itself accounts which a large proportion of the detected signal outputted from the sensor and thus it is difficult to detect minute defects. Furthermore, since a laser light source is pulsed into oscillation, pulse components from the laser light source are superimposed on the detected signal outputted from the sensor, and therefore it is difficult to detect defects with high accuracy.

Abstract: Disclosed is a defect inspection device comprising: an illumination optical portion which illuminates an object to be inspected with illuminating light; a detection optical portion system illuminated by the illumination optical portion and provided with a plurality of detectors which respectively detects components of scattering light which scatter from the inspected object each in a different direction of azimuthal angle or in a different direction of angle of elevation with respect to a surface of the inspected object; and a signal processing portion which makes gain adjustments and defect decisions in parallel on plural signals based on the components of the scattering light from the inspected object detected by the detectors, respectively, the defect decisions being based on a threshold value decision, and which extracts defects based on results of the gain adjustments and of the defect decisions.

Abstract: Disclosed are methods and apparatus for optimizing a mode of an inspection tool. A first image or signal for each of a plurality of first apertures of the inspection tool is obtained, and each first image or signal pertains to a defect area. For each of a plurality of combinations of the first apertures and their first images or signals, a composite image or signal is obtained. Each composite image or signal is analyzed to determine an optimum one of the combinations of the first apertures based on a defect detection characteristic of each composite image.

Abstract: Provided herein is an apparatus, including a photon emitting means configured to emit photons onto a surface of an article at a number of azimuthal angles; and a processing means configured to process photon-detector-array signals corresponding to photons scattered from surface features of the article and generate one or more surface features maps for the article from the photon-detector-array signals corresponding to the photons scattered from the surface features of the article.

Abstract: In order to inspect a board, first, an inspection area including a solder joint is provided with a first light having a first color, a second light having a second color and a third light having a third color at a first inclination angle, a second inclination angle smaller than the first inclination angle and a third inclination angle smaller than the second inclination angle with respect to the board, respectively. Then, a color image of the inspection area is acquired according to the first light, the second light and the third light provided to the inspection area. Thereafter, it is inspected whether the solder joint is good or bad by using a color distribution in the color image. Then, the inspection result is verified by using pre-measured height information of the solder joint. Thus, an inspection error may be prevented.

Abstract: Disclosed are methods and apparatus for performing inspection or metrology of a semiconductor device. The apparatus includes a plurality of laser diode arrays that are configurable to provide an incident beam having different wavelength ranges. The apparatus also includes optics for directing the incident beam towards the sample, a detector for generating an output signal or image based on an output beam emanating from the sample in response to the incident beam, and optics for directing the output beam towards the detector. The apparatus further includes a controller for configuring the laser diode arrays to provide the incident beam at the different wavelength ranges and detecting defects or characterizing a feature of the sample based on the output signal or image.

Abstract: Detection of periodically repeating nanovoids is indicative of levels of substrate contamination and may aid in reduction of contaminants on substrates. Systems and methods for detecting nanovoids, in addition to, systems and methods for cleaning and/or maintaining cleanliness of substrates are described.

Abstract: Systems and methods for inspecting a wafer are provided. One system includes an illumination subsystem configured to illuminate the wafer; a collection subsystem configured to collect light scattered from the wafer and to preserve the polarization of the scattered light; an optical element configured to separate the scattered light collected in different segments of the collection numerical aperture of the collection subsystem, where the optical element is positioned at a Fourier plane or a conjugate of the Fourier plane of the collection subsystem; a polarizing element configured to separate the scattered light in one of the different segments into different portions of the scattered light based on polarization; and a detector configured to detect one of the different portions of the scattered light and to generate output responsive to the detected light, which is used to detect defects on the wafer.

Abstract: The present invention makes the use of measurement of a diffraction spectrum in or near an image plane in order to determine a property of an exposed substrate. In particular, the positive and negative first diffraction orders are separated or diverged, detected and their intensity measured to determine overlay (or other properties) of exposed layers on the substrate.

Abstract: When it is tried to detect a microscopic defect, it is desired that the width of the above-mentioned illuminated region in the minor axis direction should be short. In the related art, although an illuminated region is formed by converging light by some means, it is not easy to form an illuminated region with a narrower width. This is because various aberrations possessed by optical elements themselves used for convergence, aberrations possessed by other optical elements disposed on optical paths, assembly errors, and the like have undesired influence on the formation of linear illumination. In the related art, sufficient consideration has not been paid to the above points. The present invention is characterized in that it includes a system for changing the wavefront of light.

Abstract: A surface scanning wafer inspection system with independently adjustable scan pitch and associated methods of operation are presented. The scan pitch may be adjusted independently from an illumination area on the surface of a wafer. In some embodiments, scan pitch is adjusted while the illumination area remains constant. For example, defect sensitivity is adjusted by adjusting the rate of translation of a wafer relative to the rate of rotation of the wafer without additional optical adjustments. In some examples, the scan pitch is adjusted to achieve a desired defect sensitivity over an entire wafer. In other examples, the scan pitch is adjusted during wafer inspection to optimize defect sensitivity and throughput. In other examples, the scan pitch is adjusted to maximize defect sensitivity within the damage limit of a wafer under inspection.

Abstract: An optical probe system for probing an electronic device includes a sample plate that can hold a target device comprising an integrated circuit, an optical objective system that can collect reflected or emitted light from the integrated circuit in the target device, and a temperature control chamber that can hold a fluid to control the temperature of the target device.

Abstract: An inspection apparatus comprising, a Rochon prism configured to branch the light transmitted through a half-wave plate, a first sensor and a second sensor for acquiring an optical image of a pattern of the sample, the branched light being incident to the first sensor and the second sensor, a light quantity acquisition unit configured to acquire a light quantity ratio (1:A) of the second sensor to the first sensor using the optical image, and to obtain an angle ? of the half-wave plate such that the light quantity ratio becomes A:1, an angle controller configured to receive information on the angle ? from the light quantity acquisition unit to control an angle of the half-wave plate, a light source controller configured to control a light quantity of the light source such that each of the light quantity values becomes a target value.

Abstract: The passivation of a nonlinear optical crystal for use in an inspection tool includes growing a nonlinear optical crystal in the presence of at least one of fluorine, a fluoride ion and a fluoride-containing compound, mechanically preparing the nonlinear optical crystal, performing an annealing process on the nonlinear optical crystal and exposing the nonlinear optical crystal to a hydrogen-containing or deuterium-containing passivating gas.

Abstract: A nanotopographic measuring device comprises an input arranged to receive sets of measurement data relating to a semi-conductor wafer (20) and memory organised into first and second working tables and a results table. A calculation function is capable of establishing a current surface equation from localised gradient values. The equation is established in such a way as to generally minimise a deviation amount between the gradient values calculated from the current surface equation and the localised gradient values. A reconstruction function calculates localised gradient values from a set of measurement data corresponding to an area of the wafer, and completes the working tables with these values. It repeatedly calls the calculation function, each time with a part of the values of the first working table and the second working table corresponding to a portion of the area of the wafer to determine, each time, a current surface equation.

Abstract: A beam deflection device including an aluminum disc containing a plurality of lasers, each laser projecting a laser beam substantially along one of the ‘X’, ‘Y’, and ‘Z’ axes of a structural beam to which the device is attached. Wiring is attached to each of the plurality of lasers to provide power and transmit data. Passageways are provided in the solid disc to route the wiring to the exterior. A suction cup on a surface of the device allows it to be attached to the beam by pressing the device against a flat surface area of the beam.

Abstract: A method of determining a parameter of a wafer is disclosed. Light is propagated through a waveguide disposed in the wafer. A first measurement of optical power is obtained at a first optical tap coupled to the waveguide and a second measurement of optical power is obtained at a second optical tap coupled to the waveguide using a photodetector placed at a selected location with respect to the wafer. A difference in optical power is determined between the first optical tap and the second optical tap from the first measurement and the second measurement. The parameter of the wafer is determined from the determined difference in optical power.

Abstract: The present disclosure provides a method of repairing a mask. The method includes inspecting the mask using a mask inspection tool to identify a defect on a circuit pattern of the mask; repairing the defect using a mask repair tool to form a repaired pattern; forming a first group of diffraction images of the repaired pattern and a second group of diffraction images of a reference feature; and validating the mask by comparing the first group of diffraction images with the second group of diffraction images.

Abstract: The invention relates to a dark-field semi-conductor wafer inspection device including, in the following order, a light source for emitting an incident beam to a wafer along a first axis, a concentrator (7) that is symmetrical in relation to a plane passing through the first and second axes and is provided with a mirror that is elliptically cut along a plane perpendicular to an axis perpendicular to the first axis and has a generator parallel to the first axis, parallel first and second slits (13, 14) being set up side-ways in first and second portions (9, 10) of the concentrator at the points for concentrating the light that is scattered by the wafer and reflected by the second and first portions of the concentrator, respectively, and a photomultiplier using a slit.

Abstract: The disclosure is directed to a system and method for inspecting a spinning sample by substantially simultaneously scanning multiple spots on a surface of the sample utilizing a plurality of illumination beams. Portions of illumination reflected, scattered, or radiated from respective spots on the surface of the sample are collected by at least one detector array. Information associated with at least one defect of the sample is determined by at least one computing system in communication with the detector array. According to various embodiments, at least one of scan pitch, spot size, spot separation, and spin rate is controlled to compensate pitch error due to tangential spot separation.

Abstract: Disclosed is a method of final defect inspection, including preparing a final defect inspection apparatus which includes a host device, a microscope, a bar code scanner, a support tool and a signal transceiver, using the host device to calibrate an original point in an outline of the circuit board based on a plurality of original mark positions generated by an electromagnetic pen, using the electromagnetic pen to mark each defect position on the inspection region on the circuit board where any defect is found through the microscope, using the signal transceiver to receive and transmit each defect position to the host device, and using the host device to calculate the coordinate of a scrap region based on a relative position between the original point and each defect position so as to generate a shipment file.

Abstract: In defect scanning carried out in a process of manufacturing a semiconductor or the like, a light detection optical system comprising a plurality of photosensors is used for detecting scattered light reflected from a sample. The photosensors used for detecting the quantity of weak background scattered light include a photon counting type photosensor having few pixels whereas the photosensors used for detecting the quantity of strong background scattered light include a photon counting type photosensor having many pixels or an analog photosensor. In addition, nonlinearity caused by the use of the photon counting type photosensor as nonlinearity of detection strength of defect scattered light is corrected in order to correct a detection signal of the defect scattered light.

Abstract: The disclosure is directed to a system and method for reviewing a curved edge of a sample. A line scan detector is actuated along an actuation path defined by the edge of the sample to scan a plurality of locations along the sample edge. The scan data is assembled to generate at least one review image of at least a portion of the edge of the sample. In some embodiments a substantially normal angle of incidence is maintained between the sample edge and the scanning illumination. In some embodiments, brightfield and darkfield images may be collected utilizing a common objective with separately operable illumination sources directing illumination along a first and second illumination path to the sample edge for review.

Abstract: An inspecting device includes: an irradiation part for dividing pulsed light emitted from a femtosecond laser into measurement pump light and measurement probe light, to irradiate a solar cell; a detection part for detecting an electromagnetic wave emitted from the solar cell in accordance with the irradiation with the measurement probe light; and a measurement delay part for delaying the time of arrival of the measurement probe light at the solar cell relatively to the measurement pump light. The irradiation part is provided with a galvano mirror for scanning with the measurement probe light a wide range which is wider than an irradiated range (pump light spot) being irradiated with the measurement pump light in a solar cell.

Abstract: A system and method for determining measurement results of a dark-field inspection apparatus up to a microscopic area. A dark-field inspection apparatus is calibrated using a reference wafer having microroughness of an irregular asperity pattern accurately formed on a surface, and the microroughness of the surface having an ensured microroughness degree. This microroughness is measured by using an AFM, and an expected haze value is obtained based on the measured value. Then, haze of the surface of the reference wafer is measured by the dark-field inspection apparatus to be inspected to obtain an actually-measured haze value, and a difference between the expected haze value and the actually-measured haze value is obtained. Based on this difference, a haze measurement parameter of the dark-field inspection apparatus is adjusted so that the actually-measured haze value and the expected haze value match each other.