Abstract: Inspection guided overlay metrology may include performing a pattern search in order to identify a predetermined pattern on a semiconductor wafer, generating a care area for all instances of the predetermined pattern on the semiconductor wafer, identifying defects within generated care areas by performing an inspection scan of each of the generated care areas, wherein the inspection scan includes a low-threshold or a high sensitivity inspection scan, identifying overlay sites of the predetermined pattern of the semiconductor wafer having a measured overlay error larger than a selected overlay specification utilizing a defect inspection technique, comparing location data of the identified defects of a generated care area to location data of the identified overlay sites within the generated care area in order to identify one or more locations wherein the defects are proximate to the identified overlay sites, and generating a metrology sampling plan based on the identified locations.

Abstract: An optical component includes a substrate and a fluorine-doped thin film formed on the substrate. This fluorine-doped thin film is dense, and thus very low absorbing and insensitive to various vacuum, temperature, and humidity conditions. This dense film has a high refractive index, which remains stable irrespective of environmental conditions. The fluorine-doped thin film can advantageously ensure low scattering, low reflectance, and high transmittance. Moreover, the fluorine-doped thin film is damage resistant to incident radiation density. The fluorine-doped thin film may be a fluorine-doped silicon oxide film having a thickness of approximately 1-10 nm and a fluorine concentration of 0.1% to 5%.

Abstract: A defect inspection device comprises an inspection optical system including a light source, a half mirror for reflecting illumination light emitted from the light source, a catadioptric objective lens for collecting reflected light from the sample by illumination light reflected by the half mirror, an imaging lens for focusing the reflected light transmitted through the catadioptric objective lens, a relay lens having a blocking member provided at a position at which specularly reflected light from the sample is focused by the imaging lens, and a detector for detecting specularly reflected light not blocked by the blocking member; and a computation processing unit for detecting defects of the sample on the basis of the signals detected by the detector.

Abstract: An optical collection system for use in a surface inspection system for inspecting a surface of a workpiece. The surface inspection system has an incident beam projected through a back quartersphere and toward a location on the surface of the workpiece to impinge on the surface. This forms a reflected beam that extends along a light channel axis in a front quartersphere, and forms scattered light having a haze scatter portion. The incident beam and the light channel axis form an incident plane. The optical collection system includes back collectors that are positioned in the back quartersphere for collecting the scattered light, where each of the back collectors is disposed in the back quartersphere outside the incident plane, and at a relative minimum in the Rayleigh scatter.

Abstract: An inspection apparatus and method includes a light source, an illuminating unit having a polarization controller and an object lens for illuminating a specimen with light emitted from the light source and passed through the polarization controller and the object lens, a detection unit having a sensor for detecting light from the specimen illuminated by the illuminating unit, a processor which processes a signal output from the sensor so as to detect a defect on the specimen, and a display which displays information output from the processor. The processor processes an image formed from the signal output from the sensor in which the image is reduced in speckle pattern.

Abstract: Calibration of an angularly resolved scatterometer is performed by measuring a target in two or more different arrangements. The different arrangements cause radiation being measured in an outgoing direction to be different combinations of radiation illuminating the target from ingoing directions. A reference mirror measurement may also be performed. The measurements and modeling of the difference between the first and second arrangements is used to estimate separately properties of the ingoing and outgoing optical systems. The modeling may account for symmetry of the respective periodic target. The modeling typically accounts for polarizing effects of the ingoing optical elements, the outgoing optical elements and the respective periodic target. The polarizing effects may be described in the modeling by Jones calculus or Mueller calculus. The modeling may include a parameterization in terms of basis functions such as Zernike polynomials.

Abstract: Apparatus and method for manufacturing a semiconductor device through a layer material dimension analysis increase productivity. The method includes performing a semiconductor manufacturing process of at least one reference substrate and at least one target substrate in a semiconductor process device, detecting a reference spectrum and a reference profile for the reference substrate, determining a relation function between the detected reference spectrum and reference profile, detecting a real-time spectrum of the target substrate, and determining in real time a real-time profile of the target substrate processed in the semiconductor process device by using the detected real-time spectrum as a variable in the determined relation function.

Abstract: Inspection of EUV patterned masks, blank masks, and patterned wafers generated by EUV patterned masks requires high magnification and a large field of view at the image plane. An EUV inspection system can include a light source directed to an inspected surface, a detector for detecting light deflected from the inspected surface, and an optic configuration for directing the light from the inspected surface to the detector. In particular, the detector can include a plurality of sensor modules. Additionally, the optic configuration can include a plurality of mirrors that provide magnification of at least 100× within an optical path less than 5 meters long. In one embodiment, the optical path is approximately 2-3 meters long.

Abstract: Test structures and methods for semiconductor devices, lithography systems, and lithography processes are disclosed. In one embodiment, a method of manufacturing a semiconductor device includes using a lithography system to expose a layer of photosensitive material of a workpiece to energy through a lithography mask, the lithography mask including a plurality of first test patterns having a first phase shift and at least one plurality of second test patterns having at least one second phase shift. The layer of photosensitive material of the workpiece is developed, and features formed on the layer of photosensitive material from the plurality of first test patterns and the at least one plurality of second test patterns are measured to determine a optimal focus level or optimal dose of the lithography system for exposing the layer of photosensitive material of the workpiece.

Abstract: The present invention provides a method and apparatus for inspecting a surface of a substrate. The apparatus includes: a rotatable stage on which a substrate to be inspected is placed; an inspection optical system having an illumination light source for emitting light to a substrate placed on the stage and a detector for detecting light from the substrate which is irradiated with the light from the illumination light source; an A/D converter for amplifying and A/D converting signals output from the detector in the inspection optical system; and a defect detector for detecting defects in a surface of the substrate by processing signals output from the detector and converted by the A/D converter and classifying the defected defects. The defect detector extracts micro defects in the surface of the substrate by processing the signals output from the detector, and detects linear defects existing discretely in a linear region.

Abstract: Disclosed is a final defect inspection system, which including a host device, a microscope, a bar code scanner, a support tool, a signal transceiver and an electromagnetic pen. The bar code scanner scans a bar code on a circuit board provided on the support plate. The host device selects data and a circuit layout diagram from the database corresponding to the bar code. The signal transceiver and the electromagnetic pen are electrically connected to the host device. The electromagnetic pen is used to make a mark on a scrap region of the circuit board where any defect is visually found through the microscope. The signal transceiver receives and transmits the positions of the mark to the host device such that the host device calculates the coordinate of a scrap region based on a relative position between an original point and the positions of the mark.

Abstract: The present invention is to provide an optical surface defect inspection apparatus or an optical surface defect inspection method that can improve a signal-to-noise ratio according to a multi-segmented cell method without performing autofocus operations, and can implement highly sensitive inspection. The present invention is an optical surface defect inspection apparatus or an optical surface defect inspection method in which an inspection beam is applied onto a test subject, an image of a scattered light from the surface of the test subject is formed on a photo-detector, and a defect on the surface of the test subject is inspected based on an output from the photo-detector. The photo-detector has an optical fiber bundle. One end thereof forms a circular light receiving surface to receive the scattered light. The other end thereof is connected to a plurality of light receiving devices.

Abstract: An apparatus for inspecting, measuring, or inspecting and measuring a reflective photomask may comprise a light illuminating part including a light source and beam shaping part; a stage configured to cause the light generated to be incident at an angle through the beam shaping part; and/or a light detector configured to receive optical image information of the photomask mounted on the stage. An apparatus for inspecting, measuring, or inspecting and measuring a reflective photomask may comprise a light illuminating part including a light source and configured to adjust a progress direction of light from the light source at an angle; a stage in a direction at which the light is irradiated from the light illuminating part at the angle and configured to mount the photomask; a slit plate between the light illuminating part and the stage; and/or a light detector configured to receive image information of the photomask.

Abstract: Systems and methods for detecting defects on a wafer are provided. One method includes generating output for a wafer by scanning the wafer with an inspection system using first and second optical states of the inspection system. The first and second optical states are defined by different values for at least one optical parameter of the inspection system. The method also includes generating first image data for the wafer using the output generated using the first optical state and second image data for the wafer using the output generated using the second optical state. In addition, the method includes combining the first image data and the second image data corresponding to substantially the same locations on the wafer thereby creating additional image data for the wafer. The method further includes detecting defects on the wafer using the additional image data.

Abstract: Disclosed here is a macro inspection apparatus for a sample such as a semiconductor wafer having a pattern formed thereon, the apparatus being capable of detecting abnormalities in dimension and size with high sensitivity. The inspection apparatus for a sample having pattern formed thereon includes: an illumination optical system which illuminates the sample having the pattern formed thereon; a detection optical system which receives scattered light from the pattern; an imaging device which is disposed over a pupil plane of the detection optical system, the imaging device acquiring Fourier images of the pattern; and a processing unit which compares the Fourier images with the Fourier image of the normal pattern to detect an irregularity of the pattern.

Abstract: An appearance inspection apparatus analyzes a difference in detection characteristics of detection signals obtained by detectors to flexibly meet various inspection purposes without changing a circuit or software. The apparatus includes a signal synthesizing section that synthesizes detection signals from the detectors in accordance with a set condition. An input operating section sets a synthesizing condition of the detection signal by the signal synthesizing section, and an information display section displays a synthesizing map structured based on a synthesized signal which is synthesized by the signal synthesizing section in accordance with a condition set by the input operating section.

Abstract: According to one embodiment, a method of inspecting a mask substrate for defects, includes acquiring a defocus image of a partial region of a mask substrate using a dark-field optical system, acquiring a just-focus image of the partial region using the dark-field optical system, generating a set composed of first signals obtained from the defocus image and having signal intensities equal to or higher than a first threshold value, excluding, from the set, the first signals pertaining to parts in which signal intensities of signals obtained from the just-focus image are equal to or higher than a second threshold value, determining an inspection threshold value for signal intensities, on the basis of the first signals not excluded from, and remaining in, the sea.

Abstract: To prevent overlooking of a defect due to reduction in a defect signal, a defect inspection device is configured such that: light is irradiated onto an object to be inspected on which a pattern is formed; reflected, diffracted, and scattered light generated from the object by the irradiation of the light is collected, such that a first optical image resulting from the light passed through a first spatial filter having a first shading pattern is received by a first detector, whereby a first image is obtained; the reflected, diffracted, and scattered light generated from the object is collected, such that a second optical image resulting from the light passed through a second spatial filter having a second shading pattern is received by a second detector, whereby a second image is obtained; and the first and second images thus obtained are processed integrally to detect a defect candidate(s).

Abstract: Systems configured to inspect a wafer are provided. One system includes an illumination subsystem configured to illuminate a set of spots on a wafer and a collection subsystem configured to collect light from the set of spots. The collection subsystem separately images the light collected from each of the individual spots onto only a corresponding first detector of a first detection subsystem. The collection subsystem also images the light collected from at least some of the individual spots onto a number of second detectors of a second detection subsystem that is less than a number of spots in the set. Output produced by the first and second detectors can be used to detect defects on the wafer.

Abstract: A defect inspection method according to the present invention is a defect inspection method for inspecting a defect of a semiconductor wafer, including the steps of: (a) forming a mark on a semiconductor wafer that is an inspection object, the mark corresponding to the size of a device chip that will be obtained from the semiconductor wafer, the mark being formed with respect to a predetermined device chip on the semiconductor wafer; and (b) during a predetermined process included in a semiconductor wafer process or before the semiconductor wafer process, performing a defect inspection on the semiconductor wafer and recognizing defect information based on the mark as a reference.

Abstract: An inspection apparatus includes a wafer stage for carrying a wafer, an illumination module which irradiates an inspection beam on the wafer carried on the wafer stage, a detection module which detects scattering rays or reflection rays from the wafer on the wafer stage and outputs an image signal, a coordinates control module which stores information about the arrangement of individual inspection areas on the wafer, and an imperfect area recognition module which recognizes, on the basis of the inspection area arrangement information stored in the coordinates control module, an imperfect inspection area interfering with a wafer edge.

Abstract: A printed circuit board including a substrate of electrically insulating material and a pattern of electrically conducting paths formed on at least one side of the substrate. One or more electronic components mounted to the substrate in connection with the electrically conductive paths. At least one of the components including a base solder connection between a base surface and a facing conducting surface of the component. The base solder connection is substantially obscured from view from the side of the substrate to which the component is attached and an opening is provided extending through the substrate beneath the base surface of the component so that the base solder connection is visible through the opening.

Abstract: Methods and systems for enhancing metrology sensitivity to particular parameters of interest are presented. Field enhancement elements (FEEs) are constructed as part of a specimen to enhance the measurement sensitivity of structures of interest present on the specimen. The design of the FEEs takes into account measurement goals and manufacturing design rules to make target fabrication compatible with the overall device fabrication process. Measurement of opaque materials, high-aspect ratio structures, structures with low-sensitivity, or mutually correlated parameters is enhanced by the addition of FEEs. Exemplary measurements include critical dimension, film thickness, film composition, and optical scatterometry overlay. In some examples, a target element includes different FEEs to improve the measurement of different structures of interest. In other examples, different target elements include different FEEs.

Abstract: A polarizing device may be used with sample inspection system having one or more collection systems that receive scattered radiation from a region on a sample surface and direct it to a detector. The polarizing device disposed between the collection system(s) and the detector. The polarizing device may include a plurality of polarizing sections. The sections may be characterized by different polarization characteristics. The polarizing device is configured to transmit scattered radiation from defects to the detector and to block noise from background sources that do not share characteristics with scattered radiation from the defects from reaching the detector while maximizing a capture rate for the defects the detector at a less than optimal signal-to-noise ratio.

Abstract: In an apparatus for measuring the dimensions of an object, an opto-electronic sensor system includes an illumination device which sends light towards the object and a receiving device which receives light reflected from the object. In particular, the apparatus includes means for optically splitting the field of view of the opto-electronic sensor system into a plurality of sectors. Each of these sectors covers at least a partial view of the object under inspection from a unique viewing point. The arrangement of the optical splitting means is selected so that based on the respective field of view and the location of the actual or virtual viewing point of each sector the area on the object surface which is visible from at least one of said viewing points is maximized. The apparatus uses only one opto-electronic sensor, but obtains multi-perspective imaging of the object.

Abstract: The disclosure provides apparatuses for videoconferencing and a method of operation thereof. In one embodiment, an apparatus includes: (1) a display substrate occupying less than an entirety of a viewing area, (2) an actuator configured to move the display substrate over the viewing area and (3) a camera having a field of view at least partially overlapping the viewing area and configured to capture a camera image through the viewing area.

Abstract: An illumination module that may include a LED driver; a strip cable comprising multiple conductors that have a high ratio form factor and a low impedance and a low inductance factor; the forms factor is a ratio between a width of the strip cable and a thickness of the strip cable; a group of light emitting diodes (LEDs) that comprises at least one LED; the group of LED is coupled to the LED driver via the strip cable; wherein the LED driver is arranged to activate the group of LEDs by driving a high current short duration driving signal via the strip cable; and wherein the group of LEDs is arranged to emit at least one light pulse in response to the high current short duration driving signal.

Abstract: A surface inspection apparatus (1) has a stage (5) for supporting a wafer (10) on which predetermined patterns have been formed by exposure using an exposure device (100); an illumination system (20) for irradiating an illuminating light on the surface of the wafer (10) supported by the stage (5); an imaging device (35) for detecting light from the surface of the wafer (10) on which illuminating light has been irradiated, and outputting a detection signal; and an image processing unit (40) for determining the focus state during exposure, on the basis of the detection signal sent from the imaging device (35).

Abstract: Determination of one or more optical characteristics of a structure of a semiconductor wafer includes measuring one or more optical signals from one or more structures of a sample, determining a background optical field associated with a reference structure having a selected set of nominal characteristics based on the one or more structures, determining a correction optical field suitable for at least partially correcting the background field, wherein a difference between the measured one or more optical signals and a signal associated with a sum of the correction optical field and the background optical field is below a selected tolerance level, and extracting one or more characteristics associated with the one or more structures utilizing the correction optical field.

Abstract: In order to maximize the effect of signal addition during inspection of foreign substances in wafers, a device structure including line sensors arranged in plural directions is effective. Low-angle detection optical systems that detect light beams in plural azimuth directions, the light beams being scattered in low angle directions among those scattered from a linear area on a sample illuminated by illuminating means, each include a combination of a first imaging lens group (330) and a diffraction grating (340) and a combination of a second imaging lens group (333) and an image detector (350) having a plurality of light receiving surfaces. A signal processing unit processes signals from the image detectors of the low-angle detection optical systems by adding the signals from the light receiving surfaces corresponding between the image detectors.

Abstract: A method for verifying the internal microstructure of interconnects in flip-chip applications includes providing a microelectronic assembly comprising the following: a substrate hosting an array of flip-chip attach pads and one or more process control pads; a flip chip having an array of solder bumps in contact with the array of flip-chip attach pads; and one or more representative solder bumps contacting the one or more process control pads. The representative solder bumps have a substantially similar or identical chemical composition as the array of solder bumps. A reflow cycle is then applied to the microelectronic assembly to melt and solidify the array of solder bumps on the flip-chip attach pads and melt and solidify the representative solder bumps on the process control pads. The surface texture of the representative solder bumps is then optically inspected to determine an internal microstructure of the array of solder bumps.

Abstract: An optical equipment for inspecting and addressing a specimen is disclosed. The optical equipment comprises an optical device and a processing module. The optical device comprises a light source, a sample inspecting device and an address detecting device. The sample inspecting device comprises a first objective lens and a first detector. A beam is focused on a sample placed in an inspected site of a specimen by the first objective lens. The address detecting device comprises a second objective lens and a second detector. A beam is focused on the address coding site by the second objective lens. The processing module controls the beam to be focused on the sampling points of the inspected site to generate first optical signals, and simultaneously controls the beam of the light source to be focused on the corresponding address codes of the address coding site to generate second optical signals.

Abstract: Various embodiments for extended defect sizing range for wafer inspection are provided.

Abstract: A surface defect inspection apparatus and method for irradiating a beam multiple times to a same region on a surface of an inspection sample, detecting each scattered light from the same region by detection optical systems individually to produce plural signals, and wherein irradiating the beam includes performing a line illumination of the beam on a line illumination region of the sample surface. The line illumination region is moved in a longitudinal direction at a pitch shorter than a length of the line illumination region in the longitudinal direction.

Abstract: The defect inspecting apparatus is capable of easily performing adjustment with a change of an elevation angle of illumination to a substrate to be inspected, while being low in cost. A plane parallel plate and a cylindrical lens supported by a lens holder are symmetrically disposed at the same tilt angle ? with respect to a horizontal plane. A shift in optical axis at a focal position of light (101) with the rotation of the cylindrical lens can be prevented from occurring. The light can be rotated with a motor and a belt by a rotating mechanism, while allowing the optical axes of the light to match each other at the same focal position. The lens holder and the rotating mechanism are connected to a vertically moving mechanism and moved along a guide of the vertically moving mechanism to thereby adjust the focal position of the cylindrical lens.

Abstract: In a conventional art, vibrations of compositions (for example, a Z-stage, a ?-stage, a wafer chuck, and a detection optical system mounted above a stage linear scale) within a device are not precisely fed back to a coordinate value.

Abstract: An object is to reduce the effect of a film thickness variation on the substrate surface of a thin film and improve the measuring accuracy. Provided are a light source that radiates single-wavelength light to an inspection-target substrate (W), which is formed by forming a thin film on a glass substrate from the glass substrate side; a light receiving element that is disposed such that the light receiving axis intersects with the optical axis of illumination light emitted from the light source at a predetermined inclination angle and that receives diffused transmitted light that has been transmitted through the inspection-target substrate W; and a computer (7) that obtains a haze ratio of the thin film on the basis of the intensity of the light received by the light receiving element.

Abstract: The invention provides a new dual-sided Moiré wafer analysis system that integrates wafer flatness measurement capability with wafer surface defect detection capability. The invention may be, but is not necessarily, embodied in methods and systems for simultaneously applying phase shifting reflective Moiré wafer analysis to the front and back sides of a silicon wafer and comparing or combining the front and back side height maps. This allows wafer surface height for each side of the wafer, thickness variation map, surface nanotopography, shape, flatness, and edge map to be determined with a dual-sided fringe acquisition process. The invention also improves the dynamic range of wafer analysis to measure wafers with large bows and extends the measurement area closer to the wafer edge.

Abstract: Computer-implemented methods, computer-readable media, and systems for determining one or more characteristics of a wafer are provided.

Abstract: In one embodiment, a method for detecting design defects is provided. The method includes receiving design data of an integrated circuit (IC) on a wafer, measuring wafer topography across the wafer to obtain topography data, calculating a scanner moving average from the topography data and the design data to provide a scanner defocus map across the wafer, and determining a hotspot design defect from the scanner defocus map. A computer readable storage medium, and a system for detecting design defects are also provided.

Abstract: The present invention includes an interposer disposed on a surface of a substrate, a light sensing array sensor disposed on the interposer, the light sensing array sensor being back-thinned and configured for back illumination, the light sensing array sensor including columns of pixels, one or more amplification circuitry elements configured to amplify an output of the light sensing array sensor, the amplification circuits being operatively connected to the interposer, one or more analog-to-digital conversion circuitry elements configured to convert an output of the light sensing array sensor to a digital signal, the ADC circuitry elements being operatively connected to the interposer, one or more driver circuitry elements configured to drive a clock or control signal of the array sensor, the interposer configured to electrically couple at least two of the light sensing array sensor, the amplification circuits, the conversion circuits, the driver circuits, or one or more additional circuits.

Abstract: A method and apparatus of inspecting a defect of a surface of a sample in which a laser beam is irradiated on a sample surface so that at least a part of an illumination field of the laser beam illuminates a first area of the sample surface, a plurality of scattered light rays from the first area caused by the irradiation is detected with a plurality of detectors, detection errors of inclination of an illumination apparatus and a sensor for the plurality of scattered light rays detected by the plurality of detectors are corrected, at least one of adding and averaging the corrected plurality of scattered light rays, and a defect on the sample surface is determined based on the plurality of scattered light rays in accordance with the correction of errors of inclination of the illumination apparatus and the sensor.

Abstract: A defect inspection apparatus for inspecting a surface of a sample includes a stage for holding the sample, an illumination optical system that irradiates a laser beam to form a linear illuminated area on the surface of the sample, a detection optical system, and a signal processing system. The detection optical system includes a detector device having a plurality of pixels for detecting light scattered from the linear illuminated area of the surface of the sample, and that outputs in parallel a plurality of detection signals having mutually different sensitivities acquired from the plurality of pixels of the detector device. The signal processing system selects an unsaturated detection signal from the plurality of detection signals and detects a defect in accordance with the selected detection signal.

Abstract: A method of inspecting a bonded wafer 3 arrangement comprises: directing measuring radiation through the bonded wafer arrangement 3; imaging at least a portion of the bonded wafer arrangement onto a detector 19 using the measuring radiation having traversed the bonded wafer arrangement, wherein an object side numerical aperture ? of the imaging 16, 18 is less than 0.05; and simultaneously detecting, using the detector 19, at least a portion of the measuring radiation having traversed the bonded wafer arrangement at a multitude of different spaced apart locations 23 within the field of view; wherein the detected radiation has an intensity spectrum such that an intensity of the detected radiation having wavelengths less than 700 nm is less than 10% of a total intensity of the detected radiation and an intensity of the detected radiation having wavelengths greater than 1200 nm is less than 10% of the total intensity of the detected radiation.

Abstract: A pattern defect inspection apparatus capable of detecting minute defects on a sample with high sensitivity without generating speckle noise in signals is realized. Substantially the same region on a surface of a wafer is detected by using two detectors at mutually different timings. Output signals from the two detectors are summed and averaged to eliminate noise. Since a large number of rays of illumination light are not simultaneously irradiated to the same region on the wafer, a pattern defect inspection apparatus capable of suppressing noise resulting from interference of a large number of rays, eliminating noise owing to other causes and detecting with high sensitivity minute defects on the sample without the occurrence of speckle noise in the signal can be accomplished.

Abstract: A lens shape measuring apparatus measures a peripheral shape of a lens in order to measure the peripheral shape of the lens accurately according to a non-contact technique. The lens shape measuring apparatus includes: a lens holding mechanism section for holding the lens with the holding axis from the side of a lens surface; and a laser displacement meter for measuring a lens peripheral shape by irradiating a laser beam to the periphery of the lens and receiving a reflected light thereof. The laser displacement meter is installed such that a light projecting section for projecting a laser beam and a light receiving section for receiving a laser beam are aligned in a direction perpendicular to an axis line of the holding axis.

Abstract: An optical inspection system for inspecting a patterned sample located in an inspection plane includes an illumination unit defining an illumination channel of a predetermined numerical aperture and first predetermined angular orientation with respect to the inspection plane, and a light collection unit defining a collection channel of second predetermined angular orientation with respect to the inspection plane. The illumination unit comprises an illumination mask located in a first spectral plane with respect to the inspection plane and defining an illumination pupil comprising a first pattern formed by at least one elongated light transmitting region having a physical dimension along one axis larger than along a perpendicular axis. The light collection unit comprises a collection mask located in a second spectral plane with respect to the inspection plane being conjugate to the first spectral plane, the collection mask comprising a second predetermined pattern of spaced-apart light blocking regions.

Abstract: An optical inspection system for inspecting a patterned sample located in an inspection plane includes an illumination unit defining an illumination path, and a light collection unit defining a collection path, each path having a certain angular orientation with respect to the inspection plane. The illumination unit comprises an illumination mask located in a first spectral plane with respect to the inspection plane and the light collection unit comprises a collection mask located in a second spectral plane with respect to the inspection plane being conjugate to the first spectral plane. Arrangements of features of the first and second patterns are selected in accordance with a diffraction response from said patterned sample along a collection channel defined by the angular orientation of the illumination and collection paths.

Abstract: Setting a spatial filter requires repeatedly confirming a scan image through visual inspection by an operator and adjusting the spatial filter. A setting state is also dependent on the operator. Therefore, in the present invention, a scattered light image (beam image) and a diffracted light image (Fourier image) are simultaneously observed, and an intensity profile of the scattered light image (beam image) and an intensity profile of the diffracted light image (Fourier image) are simultaneously monitored. A field of view of a diffracted light image is scanned with only one spatial filter, and a state change with respect to the intensity profiles in the absence of insertion of the spatial filter is detected. A setting condition for a spatial filter is determined on the basis of the detected state change.

Abstract: The present disclosure relates to laser processing and a laser processing apparatus for processing materials using laser. Processing performed after loading a wafer on a work stage and a laser processing apparatus for implementing such processing, among others, are disclosed. The laser processing includes loading a wafer on a work stage; determining the number of chips formed on the wafer loaded on the work stage, performing chip defect inspection and aligning the wafer while moving the work stage; measuring a height of a surface of the wafer loaded on the work stage using a displacement sensor; monitoring output power of a processing laser using a power meter; and shifting the work stage while irradiating a laser beam on the wafer to process the wafer.