Abstract: A magnetic card internally includes a magnetic field generator, which includes a flexible substrate having pads, wires and a core material member arranged thereon. The pads are arrayed to form a first and a second zone. Every wire is extended in a first direction to connect to two pads that are separately located in the first and the second zone. The core material member is extended in a second direction oblique to the first direction. The substrate is in a bent state with the pads in the first zone correspondingly connected to the pads in the second zone and the core material member located in an encircling space defined by the connected pads and the wires. By changing the current amount supplied thereto, the magnetic field generator can generate variable magnetic field magnitude, enabling the magnetic card to change the transmitted data according to actual need in use.

Abstract: A thermally assisted magnetoresistive random access memory cell, a corresponding array, and a method for fabricating the array. An example cell includes a first metal layer, a second metal layer, an interlayer, a first magnetic stack, and a first non-magnetic via. The first metal layer includes a pad and a first metal line, with the pad not in direct contact with the first metal line. The second metal layer includes a second metal line and a metal strap. The second metal line is perpendicular to the first metal line and not in contact with the metal strap. The interlayer is located between the first and second metal layers. The first metal line is not in direct contact with the interlayer. The first magnetic stack is in direct contact with the interlayer and the metal strap. The first non-magnetic via is in direct contact with the pad and the metal strap.

Abstract: A cable exit trough is mountable to a lateral trough section either during initial assembly of the cable routing system, or at a later date. The exit trough includes a bracket portion mountable to the top edge of one of the sides of the lateral trough section. Two lead-ins are provided to lead the cable in an upward direction from the lateral trough section to the exit trough. The exit trough includes an exit trough portion extending from the bracket portion upwardly away from the lateral trough section. The exit trough portion includes a convexly curved bottom trough surface, and two convexly curved upstanding sides. The exit trough portion and the lead-ins define a cable pathway from the lateral trough section to an exit point of the exit trough portion which can either lead downwardly relative to the lateral trough section or horizontally.

Abstract: A three-dimensional array especially adapted for memory elements that reversibly change a level of electrical conductance in response to a voltage difference being applied across them. Memory elements are formed across a plurality of planes positioned different distances above a semiconductor substrate. A two-dimensional array of bit lines to which the memory elements of all planes are connected is oriented vertically from the substrate and through the plurality of planes. A single-sided word line architecture provides a word line exclusively for each row of memory elements instead of sharing one word line between two rows of memory elements thereby avoids linking the memory element across the array across the word lines. While the row of memory elements is also being accessed by a corresponding row of local bit lines, there is no extension of coupling between adjacent rows of local bit lines and therefore leakage currents beyond the word line.

Abstract: A three-dimensional array adapted for memory elements that reversibly change a level of electrical conductance in response to a voltage difference being applied across them. Memory elements are formed across a plurality of planes positioned different distances above a semiconductor substrate. Bit lines to which the memory elements of all planes are connected are oriented vertically from the substrate and through the plurality of planes.

Abstract: A three-dimensional array read/write (R/W) memory elements is formed across multiple layers of planes positioned at different distances above a semiconductor substrate. It is preferable to operate the R/W elements with low current and high resistive states. The resistance of these resistive states depends also on the dimension of the R/W elements and is predetermined by the process technology. A sheet electrode in series with the R/W element and a method of forming it provide another degree of freedom to adjust the resistance of the R/W memory element. The thickness of the sheet electrode is adjusted to obtain a reduced cross-sectional contact in the circuit path from the word line to the bit line. This allows the R/W memory element to have a much increased resistance and therefore to operate with much reduced currents. The sheet electrode is formed with little increase in cell size.

Abstract: A three-dimensional array adapted for memory elements that reversibly change a level of electrical conductance in response to a voltage difference being applied across them. Memory elements are formed across a plurality of planes positioned different distances above a semiconductor substrate. Bit lines to which the memory elements of all planes are connected are oriented vertically from the substrate and through the plurality of planes.

Abstract: A resistive sense memory apparatus includes a first semiconductor transistor having a first contact electrically connected to a first source line and a second contact electrically connected to a first resistive sense memory element and a second semiconductor transistor having a first contact electrically connected to a second source line and a second contact electrically connected to a second resistive sense memory element. A bit line is electrically connected to the first resistive sense memory element and the second resistive sense memory element.

Abstract: A three-dimensional array especially adapted for memory elements that reversibly change a level of electrical conductance in response to a voltage difference being applied across them. Memory elements are formed across a plurality of planes positioned different distances above a semiconductor substrate. Bit lines to which the memory elements of all planes are connected are oriented vertically from the substrate and through the plurality of planes.

Abstract: A fiber optic cable assembly including a mid-span access location, a cable having at least fiber therein, and a tether in optical communication with the at least one fiber of the cable. The access location and portions of the cables are substantially encapsulated within a flexible body having dimensions sufficient to accommodate the optical splitter therein. A method for making a fiber optic cable assembly including an access location, distribution cable, tether and optical splitter maintained within a flexible overmolded body while providing an assembly having a relatively small cross-sectional diameter.

Abstract: A chalcogenide material is formed to a first thickness over the first conductive electrode material. The chalcogenide material includes AxBy. A layer that includes a metal is formed to a second thickness over the chalcogenide material. The metal including layer defines some metal including layer transition thickness for the first thickness of the chalcogenide material such that when said transition thickness is met or exceeded, said metal including layer when diffused within said chalcogenide material transforms said chalcogenide material from an amorphous state to a crystalline state. The second thickness being less than but not within 10% of said transition thickness. The metal including layer is irradiated effective to break a chalcogenide bond of the chalcogenide material and diffuse at least some of the metal into the chalcogenide material.

Abstract: In a bistable magnetic element, a pulse current or a dc-biased high frequency current is supplied to a soft magnetic material which has a helical magnetic anisotropy. As a result, the magnitude of a voltage induced across the soft magnetic material abruptly changes with respect to variation in an external magnetic field.

Abstract: A nonvolatile analog magnetic memory includes a substrate comprised of saturable and desaturable magnetic domains at distinguishable fixed locations, a bi-directional drive circuit to selectively write data to the magnetic domains by first saturating a selected magnetic domain with current flowing in one direction, followed by desaturating the magnetic domain with current flowing in the reverse direction of the saturating current, lowering the magnetic flux density to a level corresponding to the magnitude of an analog input electrical signal within a range of magnetic flux density levels between a zero point and a full scale point, sensors and a sensor select circuit to select a magnetic domain and nondestructively respond to the magnitude of the magnetic flux for the chosen magnetic domain, producing an electrical output signal corresponding to the magnetic flux for the chosen magnetic domain.

Abstract: Method and means for coupling an elongated magnetic device such as a "Wiegand" wire to a magnetic circuit comprising the steps of shaping the ends of an elongated magnetic device to provide a high ratio of surface area to volume and a contact surface at each end, and connecting the contact surface of each end of said magnetic device to a conforming portion of a respective one of a pair of spaced ends of a flux conductive means to provide a magnetic path through said conductive means and magnetic device. The ends of the magnetic device are shaped by being compressed to provide flat surfaces on opposite sides and are connected by electric welding, clamping, soldering or adhering same with the flux conductive means. In one form the conductive means is provided with a shunt path for magnetic flux for reducing the reluctance of the coupling means, and controlling the proportion of magnetic flux passing through the elongated magnetic device.