Abstract: The present invention provides systems and methods that utilize inductive current steering to improve logic circuit performance by mitigating propagation delays associated with conventional transistor current steering. The system and methods employ RF transformers, wherein energizing primary windings induce current in associated secondary windings. In one aspect, a single clock bus is employed to induce the current, which is routed via respective ends of the secondary winding to emitter leads of the transistors. This current and voltage is 180 degrees out-of-phase such that one transistor is “on” while the other is “off,” which generates a differential output. In another aspect, a differential clock signal is employed to induce the current in secondary windings and associated transistor emitters.

Abstract: Provided is related to a NAND flash memory device and method of reading the same, in which during a read operation, a ground voltage is applied to string and ground selection transistors of deselected cell blocks so as to increase resistance of a string line to prevent leakage currents due to a back-bias effect. A reduced bitline leakage current increases an ON/OFF current ratio between programmed and erased cells to reduce a sensing time therein, which makes a read trip range so as to prevent variation of threshold voltages due to data retention and reading disturbance. Voltages can be independently applied to source selection lines by electrically isolating source selection transistors between the cell blocks. It is available to reduce the number of source discharge transistors by electrically connecting the source selection transistors between adjacent cell blocks.

Abstract: In the first and second regions data not concurrently transferred is transferred by using data lines having the respective different wiring layers. The vertical positions of the data lines are reversed between the first and second regions. In the switching regions the data lines are exchanged between the first and second regions. The parasitic capacitances associated with the two data lines are practically equal to each other so that the delay times of signals transferred along the data lines are equal to each other. This can prevent a circuit malfunction due to a parasitic capacitance difference. In the semiconductor integrated circuit where memory cell arrays and sense amplifier arrays are alternately wired, forming the first and second regions over the memory cell arrays and the switching regions over the sense amplifier arrays makes it easier to exchange the vertical positions of the data lines in the switching regions.

Abstract: A magnetic bubble memory device comprises minor loops for the storage of information and a major loop operably associated with the minor loops through gates, the minor loops being defined by an ion-implanted pattern and the gate portions of the major line being defined by patterns of magnetically soft material. This construction makes it possible to provide a high storage density and superior gate operating margins.

Abstract: A magnetic bubble device in which a first propagation path having a cyclic shape formed by selectively implanting ions into a magnetic film capable of holding magnetic bubbles and a second propagation path including soft magnetic material elements are arranged on the same chip. A soft magnetic material element having a length in the direction perpendicular to the direction of bubble propagation in the first propagation path which is not less than 2.5 times the period of the first propagation path is included in the junction between the first and second propagation paths.

Abstract: A magnetic bubble memory device is disclosed in which a magnetic bubble propagation circuit for forming a minor loop is formed by ion implantation, and at least part of a major line or major loop and at least part of connecting portions between the minor loop and the major line or major loop are formed of a film of a soft magnetic material.

Abstract: Disclosed is a magnetic bubble memory device having a first bubble propagation path formed in an ion-implanted pattern and a second bubble propagation path formed of permalloy elements, both paths being spaced out from each other by a distance larger than or equal to the diameter of the magnetic bubble, and a propagation path connecting structure in which a hairpin-shaped conductor for connecting both propagation paths is disposed between them.

Abstract: A magnetic bubble memory device comprises: a magnetic layer which has a first region having the easy axis of magnetization extending in a certain direction and a second region surrounding said first region and having the easy axis of magnetization substantially perpendicular to that of the first region, said first region defining at least one major loop pattern for propagation of information bubbles and a plurality of minor loop patterns for storage of information bubbles; and an electrical conductor pattern deposited on said magnetic layer in a region in which the major loop pattern and the minor loop patterns are opposed to each other, thereby constructing a transfer gate. The major loop pattern is provided, at the portions thereof substantially opposed to the ends of the minor loop patterns in the transfer gate, with gaps through which the bubbles are transferred between the major loop pattern and the minor loop patterns. The transfer gate is driven by means of a convex-shaped pulse of transfer current.

Abstract: A magnetic bubble domain swap gate circuit (28) for use with a magnetic bubble element having an information transmission line along which magnetic bubble domains are transferred and an information storage loop in which magnetic bubble domains are stored, wherein a magnetic bubble domain in the information transmission line can be transmitted to the information storage loop and a magnetic bubble domain in the information storage loop can be simultaneously transmitted to the information transmission line. The repetition period of the magnetic substance patterns which form the information transmission line, is greater than the period of the magnetic substance patterns forming the information storage loop.

Abstract: An improved non-data reversing one-way bubble transfer switch for contiguous disks is disclosed. The switch has a conductor arrangement in which one edge of the conductor is substantially concentric with and overlapping with the major loop which is in the form of a plurality of scallops. The major loop extends in a direction substantially transversely to one of the three primary crystallographic axes in the bubble material so as to have a propagation track with a high margin on one side and a low propagation margin on the other side. The tip of a minor loop end portion is aligned substantially concentric with the scalloped concave portion of the major loop. This switch has a maximum bias field margin and a maximum phase margin.

Abstract: An improved layout for single level, block access, magnetic bubble domain chips is provided. In the improved layout, single level devices and conductors are provided. The improvement resides primarily in utilizing conductors which are arranged in a straight-line configuration with the magnetic bubble domain propagation paths arranged in a meandering configuration. This arrangment is contrary to existing techniques and permits enhanced operation of the magnetic bubble domain system.

Abstract: A magnetic bubble memory device having a bubble generator which generates a magnetic bubble by conducting a pulse current on its hairpin-shaped conductor loop and a major propagation circuit for propagating the magnetic bubble to a transfer-in gate circuit which transfers the magnetic bubble to a memory storage region, wherein the device further comprises a gate means provided between the bubble generator and the major propagation circuit for transferring a magnetic bubble carrying information "1" onto the major propagation circuit at a first predetermined timing and preventing a spurious bubble to be transferred to the major propagation circuit at a second predetermined timing.

Abstract: A magnetic bubble domain device including a segmented stretcher detector. The detector is formed from a propagation path for magnetic bubble domains, and a first replicator disposed adjacent the propagation path. The first replicator functions to replicate one of the propagating bubble domains into a pair of magnetic bubble domains, and to transfer one of the bubble domains into a first secondary track extending in a direction different from the direction of the propagation path. A second replicator is disposed along the propagation path and functions to replicate the one bubble domain into a pair of magnetic bubble domains and to transfer one of the bubble domains into a second secondary track extending generally in the first direction. Finally, the detector is disposed along the first direction and functions to detect the plurality of magnetic bubble domains.

Abstract: A conductorless transfer is provided for a large-gap tolerant Permalloy pattern for moving magnetic bubbles. The transfer capitalizes on the symmetry of the elements for enabling a field reversal to achieve transfer.

Abstract: A magnetic bubble domain circuit which permits the information in two separate propagation paths to crossover each other without deleterious effects. The crossover junction includes at least two definable propagation paths, a merge device for joining the paths, and an active transfer junction between the two paths. The information on the two paths is arranged to become interleaved or intermixed at the merge and to be separated at the active transfer switch arrangements are made for crossing over a plurality of propagation paths by using information properly timed or spaced, or, in the alternative, using a multiple junction arrangement.

Abstract: A permalloy-first bubble switch has two curved propagation elements positioned on a layer of bubble domain supporting material. A curved conductor is superimposed on top of the propagation elements so that a current passing through the conductor element permits a bubble to be moved from one curved propagation element to the second curved propagation element.

Abstract: This current switch driving circuitry, particularly for, but not necessarily limited to, inductive device current switching, comprises a pair of output transistors constituting a driving transistor for turning ON a subsequent switching transistor and a current sinking transistor for turning OFF that switching transistor with circuit provisions for maintaining the two transistors in a low power consuming standby state. A pair of receiver circuits are arranged for applying ON and OFF logical signals individually to the two transistors by way of intermediate circuitry having current multiplying circuitry for deriving the necessary driving power with a minimum of power consumed.

Abstract: A magnetic bubble detector stretches a single magnetic bubble domain across two isolated magneto-resistive sensors so that only one of the sensors needs to be functional in order to detect the presence of a magnetic bubble. The magnetic bubble domain can be striped actively by a local field created by a current loop. Alternatively, if the magnetic bubble domain is stretched passively by propagation along a progressively widening pattern of magnetic elements, the pattern can be separated into two isolated patterns, one associated with each sensor, so that only one of the pattern/sensor pairs needs to be functional in order to detect the presence of a magnetic bubble.An active bubble switch can be used as an alternative to the passive stretch array. The bubble switch is coupled to receive the activating current provided to one the sensors for directing magnetic bubble domains to that sensor in response to the application of an activating current to that sensor.

Abstract: An active replicate/transfer magnetic bubble domain switch which is especially compatible with gap tolerant structures is provided. The switch includes a broadfaced corner element of relatively massive structure which retains the bubble domain for more than one field cycle. The switch characteristics are superior to those of existing switches both at the 8 .mu.m and 16 .mu.m periods. The switch offers the advantages of good bias and phase margins, ease of fabrication and reduced drive field requirements. In the 8 .mu.m, version the device requires a substantially lower drive field than the pickax design by virtue of reduced bubble-bubble interaction in the minor loops.

Abstract: A magnetic bubble domain storage device comprising a plurality of storage shift registers and at least one major shift register, which serves to provide bubble domains to the storage register and to receive bubble domains from the storage registers. A novel transfer switch, or gate, is located between each of the storage registers and the major register, which is typically configured in the conventional major/minor loop type of storage organization. This transfer switch can be made using single level masking or multiple level masking and is characterized in that the locus of bubble domain propagation paths through the switch element generally defines the letter "Y". These propagation paths are from one arm of the Y to the other arm, from one arm of the Y to the stem or base portion, or the reverse where a bubble domain travels from the stem (base) of the Y to one of the arms of the Y.

Abstract: A magnetic bubble memory device which comprises special minor loops for storing address information regarding spare minor loops corresponding to defective regular minor loops. The structure of the bubble transfer or reproducing gates corresponding to said special minor loops is different from that corresponding to ordinary minor loops.

Abstract: Replicate/swap gating circuitry comprising separate gates oriented to be responsive to different phases of an in-plane magnetic field for transferring data to and from an adjacent storage loop in a bubble memory, said gate being formed of magnetic domain propagate elements arranged in propagation paths to perform several independently operable gating functions by a single current conductor on application of current pulses at selected phases of the rotating in-plane magnetic field.

Abstract: In a magnetic bubble (domain) memory chip, transfer gating circuits of propagate elements oriented to be responsive to different phases of in-plane rotating magnetic field are operated by a single conductor which is subjected to current pulses during a specific phase of the rotating field cycle to transfer bubbles onto different bubble paths. The transfer gates perform their gating function only when a control current pulse occurs during a specific phase of the rotating field cycle and are unresponsive to the current pulses at other phase times on the same conductor which actuate other gates.

Abstract: An on-chip magnetic bubble decoder comprising a plurality of sequentially operated gates oriented to be responsive to different phases of the rotating in-plane magnetic field and connected to a conductor which is pulsed at the selected phase of the cycle to transfer bubbles from one track onto different tracks to be propagated therefrom. In its simplest form, one gate oriented to be operated during the phase 2 time of the cycle and a second gate oriented to be responsive to the phase 1 time of the cycle, all operable by a single conductor, thus form a four output decoder with two gates and a single conductor. A second conductor controls a third gate which modulates the bubble stream to control the data being decoded.Further embodiments of the invention include 8 output decoder (2 data bits decoded into 1 of 4 paths) with only two conductors for activating the gates and a 1 of 16 output decoder with 2 conductors for decoding and a third for data control.

Abstract: A bubble memory organization with a plurality of storage loops in-plane folds allows the selective spacing of transfer and other functional elements from each other eliminating crowded conditions at loop ends. This permits the selective placement of the functional elements for the maximization of operating margins. This can also lead to reduced current requirements because passive replicate elements may be used, to reduced transfer line impedances, to reduced number of conductor lines and to a reduced number of transfer points per memory array. For the designs where passive replication is chosen, reliability is improved due to the reduction in current density to levels further below the conductor electromigration thresholds.

Abstract: SLM field access bubble devices which include at least one conductor crossing a bubble propagation path have severely limited operating margins (especially for small bubbles) for the bubble in the vicinity of the conductor. Apparatus and method for operating such a bubble device is disclosed which improves the device operation in this region. The improved apparatus and method provides an additional field source with a sense and magnitude to support the bubble when it reaches the conductor region. Such a field source, as disclosed, includes a current pulse in the conductor.

Abstract: An acoustic surface wave bubble switch in which a magnetic bubble domain traveling in a thin film magnetic platelet can be guided in alternate directions by application of an acoustic wave. An array of longitudinal magnetic elements in the form of single bars and bars combined to form a T configuration together with a rotating in-plane magnetic field causes the magnetic bubble to propagate across the magnetic platelet. One of the configurations of the magnetic element is a T with a second horizontal bar and the bubble will have equal attraction for either of the horizontal bars. At the proper time an acoustic wave can direct the bubble to propagate in the direction of a chosen horizontal bar thereby effecting a switching action.

Abstract: A switch device which is disposed between adjacent magnetic bubble domain propagation paths to permit selective, substantially concurrent, exchange of information (i.e. magnetic bubble domains) from one path to the other. The switch is a unique arrangement of substantially conventional components which are selectively activated by application of a current through a control conductor. In one condition, the magnetic bubble domains propagate through the respective paths in the normal manner. In another condition, as a function of the control current supplied to the conductor, the bubbles are exchanged (simultaneously transferred) between the respective paths. In yet another condition, the bubbles in one path are replicated and supplied to another path.

Abstract: There is described an improved switching device for use in magnetic bubble domain systems. In this device, chevron propagation paths are utilized. A pair of substantially parallel conductors are interconnected at appropriate locations via the chevrons in the respective propagation paths. The pair of conductors permits reduced amplitude requirements in the control current signal. In addition, a return path for the current signal is provided to simplify interconnection in major/minor loop chip configurations. The chevrons are arranged such that the apex of one chevron group is contained between the pair of conductor lines. The ends of adjacent chevron groups in another propagation path are disposed between the pair of conductor lines. Consequently, the magnetic bubble domain "sits" on the chevron ends longer whereby wider phase margins during a transfer operation are achieved. Annihilation of magnetic bubble domains can be achieved by reversing the current direction.

Abstract: A block oriented random access memory (BORAM) magnetic bubble domain system which provides increased throughput of information and reduced access or read time for the same information as compared to existing major-minor or decoder accessed chip organizations which it is designed to replace.

Abstract: This invention relates to the reduction of gaps in the flow of data accessed in a synchronous serial storage serial communicating data processing memory by the provision of access storage capability at each storage location. The problem to which the invention is directed is the fact that in a synchronously driven array of the type having a number of data storage locations that are accessed by a communicating channel linking all the storage locations in series, the information flow in the communication channel will be limited by the time required for the proper point to be moved around each storage location and the resulting gaps in the data will effect the speed of response. The invention takes the bits to be transferred as they are synchronously propagated around one loop and holds them as the data is synchronously propagated around the other loop until the insertion point arrives.