Abstract: The invention provides a method for reading a first data storage of a memory cell. The method comprises sensing a first current of the memory cell by applying a first bit line voltage on the memory cell. When the first current is larger than a first reference current with respect to the first bit line voltage, the first data storage is determined to be at an un-programmed state. Otherwise, a second current of the memory cell is sensed by applying a second bit line voltage on the memory cell. When the difference between the first current and the second current is larger than the difference between the first reference current and the second reference current, the first data storage is determined to be at the un-programmed state. Otherwise, the first data storage is determined to be at a programmed state.

Abstract: The invention provides methods for programming a floating gate. A floating gate tunneling device is used with an analog comparing device in a circuit having a floating reference node and an offset-mitigating feedback loop for iteratively programming a floating gate, or multiple floating gates.

Abstract: A memory device includes a plurality of memory cells arranged in series in the semiconductor body, such as a NAND string, having a plurality of word lines. A selected memory cell is programmed by hot carrier injection. The program operation is based on metering a flow of carriers between a first semiconductor body region on a first side of the selected cell in the NAND string and a second semiconductor body region on a second side of the selected cell. A program potential higher than a hot carrier injection barrier level is applied to the selected cell, and then the drain to source voltage across the selected cell and the flow of carriers in the selected cell reach a level sufficient to support hot carrier injection, which is controlled by a switch cell adjacent the selected cell.

Abstract: Various aspects of a NAND memory include have multiple versions of a high threshold voltage distribution—a version with a reduced maximum, and another version. The version with a reduced maximum has a reduced word line pass voltage.

Abstract: An integrated circuit is disclosed. One embodiment provides a sense amplifier; a first bit line; a second bit line. A first switch is configured to connect/disconnect the first bit line to/from the sense amplifier. A second switch is configured to connect/disconnect the second bit line to/from the sense amplifier independently from the first switch.

Abstract: A memory cell structure for a memory device includes a read transistor having a floating gate node, a tunnelling capacitor, and a coupling capacitor stack. The tunnelling capacitor is connected to the floating gate node and has a first programming terminal, and the coupling capacitor stack is connected to the floating gate node and has a second programming terminal. The coupling capacitor stack includes at least two coupling capacitors arranged in series between the floating gate node and the second programming terminal, with the coupling capacitor stack having a larger capacitance than the tunnelling capacitor. Such a memory cell structure is efficient in terms of area, and can be manufactured using standard CMOS logic manufacturing processes, thereby avoiding some of the complexities involved in the production of conventional EEPROM and Flash memory devices.

Abstract: A semiconductor memory device includes memory cells, a source line, a word line, a bit line, and a driver circuit. The memory cells are formed on a semiconductor layer and have a charge accumulation layer and a control gate on the charge accumulation layer. The word line is connected to gate of the memory cell. The bit line is electrically connected to a drain of the memory cell. The source line is electrically connected to a source of the memory cell. The driver circuit varies potential of the semiconductor layer in conjunction with potential of the source line.

Abstract: A non-volatile memory system includes one or more non-volatile memory cells. Each non-volatile memory cell comprises a floating gate, a coupling device, a first floating gate transistor, and a second floating gate transistor. The coupling device is located in a first conductivity region. The first floating gate transistor is located in a second conductivity region, and supplies read current sensed during a read operation. The second floating gate transistor is located in a third conductivity region. Such non-volatile memory cell further comprises two transistors for injecting negative charge into the floating gate during a programming operation, and removing negative charge from the second floating gate transistor during an erase operation. The floating gate is shared by the first floating gate transistor, the coupling device, and the second floating gate transistor, and extends over active regions of the first floating gate transistor, the coupling device and the second floating gate transistor.

Abstract: A memory device includes a plurality of memory cells arranged in series in the semiconductor body, such as a NAND string, having a plurality of word lines. A selected memory cell is programmed by hot carrier injection using a boosted channel potential to establish the heating field. Boosted channel hot carrier injection can be based on blocking flow of carriers between a first side of a selected cell and a second side of the selected cell in the NAND string, boosting by capacitive coupling the first semiconductor body region to a boosted voltage level, biasing the second semiconductor body region to a reference voltage level, applying a program potential greater than a hot carrier injection barrier level to the selected cell and enabling flow of carriers from the second semiconductor body region to the selected cell to cause generation of hot carriers.

Abstract: The present invention describes a uniform program method and a uniform erase method of a charge trapping memory by employing a substrate transient hot electron technique for programming, and a substrate transient hot hole technique for erasing, which emulate an FN tunneling method for NAND memory operation. The methods of the present invention are applicable to a wide variety of charge trapping memories including n-channel or p-channel SONOS types of memories and floating gate (FG) type memories. the programming of the charge trapping memory is conducted using a substrate transient hot electron injection in which a body bias voltage Vb has a short pulse width and a gate bias voltage Vg has a pulse width that is sufficient to move electrons from a channel region to a charge trapping structure.

Abstract: The present invention describes systems and methods to for providing stable and programmable voltage and current reference devices. An exemplary embodiment of the present invention provides a voltage reference device having a first floating-gate transistor with a first source, a first drain, and a first gate. The first gate is provided coupled to a first programming capacitor and a first input capacitor. Furthermore, the voltage reference device includes a second floating-gate transistor having a second source, a second drain, and a second gate. The second gate is provided coupled to a second programming capacitor and a second input capacitor. Additionally, the charge difference between the first floating-gate transistor and the second floating-gate transistor is a reference voltage.

Abstract: A semiconductor memory device simultaneously selects an object cell and a counter cell which connect with a common bit line, simultaneously activates sub-word lines of the object cell and the counter cell after predetermined levels are written in the object cell and the counter cell, simultaneously read data of the object cell and the counter cell from the common bit line, and hence, determines whether the object cell is normal or defective, based on a voltage level of the common bit line. Thereby, the defective cell in the semiconductor memory device can be reliably detected.

Abstract: In a split gate MONOS memory which carries out rewrite by hot carrier injection, retention characteristics are improved. A select gate electrode of a memory cell is connected to a select gate line, and a memory gate electrode is connected to a memory gate line. A drain region is connected to a bit line, and a source region is connected to a source line. Furthermore, a well line is connected to a p type well region in which the memory cell is formed. When write to the memory cell is to be carried out, write by a source side injection method is carried out while applying a negative voltage to the p type well region via the well line.

Abstract: It is an object of the present invention to provide an involatile memory device, in which additional writing of data is possible other than in manufacturing steps and forgery and the like due to rewriting can be prevented, and a semiconductor device having the memory device. It is also an object of the present invention to provide an inexpensive involatile memory device and a semiconductor device having high reliability. According to the present invention, a memory device includes a first conductive layer, a second conductive layer, and an insulating layer interposed between the first conductive layer and the second conductive layer, where the first conductive layer has a convex portion.

Abstract: A flash memory using hot carrier injection and a method of operating the same are provided. A plurality of strings constituting a page are formed on a single p-well and share the p-well. During a program operation, a string selection transistor is turned off, and electrons are accumulated in a source or drain region in response to a bias voltage applied to the p-well. Thereafter, the accumulated electrons are trapped in a charge trap layer of a memory cell in response to a program voltage applied through a word line. Also, during an erase operation, holes accumulated in response to a bias voltage applied to the p-well are trapped in the charge trap layer in response to an erase voltage. The flash memory performs NAND-type program and erase operations using hot carrier injection.

Abstract: A method for operating a memory device is provided. In accordance with the method, the charges are stored in a source storage region, a drain storage region, and a channel storage region of a charge storage layer which respectively correspond to a source, a drain, and a channel of a SONOS transistor, thereby achieving 3-bit information storage in one cell. The channel storage region is programmed and erased by FN tunneling. Both of the source storage region and the drain storage region are programmed by channel hot electrons and erased by source-side or drain-side FN tunneling. The present invention can store three-bit data per cell, such that the storage density of the memory device can be substantially increased.

Abstract: A programmable two terminal non-volatile device uses a floating gate that can be programmed by a hot electron injection induced by a potential between a source and drain. The floating gate layer can also function as a FET gate for other circuits in an integrated circuit containing an array of the devices. The invention can be used in environments such as data encryption, reference trimming, manufacturing ID, security ID, and many other applications.

Abstract: Non-volatile memory is programmed using source side hot electron injection. To generate a high voltage bit line for programming, the bit line corresponding to a selected memory cell is charged to a first level using a first low voltage. A second low voltage is applied to unselected bit lines adjacent to the selected bit line after charging. Because of capacitive coupling between the adjacent bit lines and the selected bit line, the selected bit line is boosted above the first voltage level by application of the second low voltage to the unselected bit lines. The column control circuitry for such a memory array does not directly apply the high voltage and thus, can be designed to withstand lower operating voltages, permitting low operating voltage circuitry to be used.

Abstract: A memory structure includes a first memory cell and a second memory cell located at an identical bit line and adjacent to the first memory cell. Each memory cell includes a substrate, a source, a drain, a charge storage device, and a gate. A method for programming the memory structure includes respectively providing a first gate biasing voltage and a second gate biasing voltage to the gates of the first memory cell and the second memory cell, boosting an absolute value of a channel voltage of the first memory cell to generate electron and hole pairs at the drain of the second memory cell through gate-induced drain leakage or band-to-band tunneling, and injecting the hole of the generated electron and hole pairs into the charge storage device of the first memory cell to program the first memory cell.

Abstract: The present invention describes a uniform program method and a uniform erase method of a charge trapping memory by employing a substrate transient hot electron technique for programming, and a substrate transient hot hole technique for erasing, which emulate an FN tunneling method for NAND memory operation. The methods of the present invention are applicable to a wide variety of charge trapping memories including n-channel or p-channel SONOS types of memories and floating gate (FG) type memories. the programming of the charge trapping memory is conducted using a substrate transient hot electron injection in which a body bias voltage Vb has a short pulse width and a gate bias voltage Vg has a pulse width that is sufficient to move electrons from a channel region to a charge trapping structure.

Abstract: A nonvolatile random access memory that can be mounted on a substrate during a standard CMOS process. A memory cell comprises: a first MIS transistor including a first semiconductor layer of a first conductivity type in an electrically floating state, first drain and source regions of a second conductivity type formed on the first semiconductor layer, and a first gate electrode formed over the first semiconductor layer via a first gate insulating film; and a second MIS transistor including a second semiconductor layer of the first conductivity type isolated from the first semiconductor layer, second drain and source regions of the second conductivity type formed on the second semiconductor layer, a second gate electrode formed over the second semiconductor layer via a second gate insulating film. The first and second gate electrodes are electrically connected to each other so as to form a floating gate in an electrically floating state.

Abstract: A nonvolatile semiconductor memory device includes: a memory unit; and a control unit. The memory unit includes: a multilayer structure including electrode films and interelectrode insulating films alternately stacked; a semiconductor pillar piercing the multilayer structure; insulating films and a memory layer provided between the electrode films and the semiconductor pillar; and a wiring connected to the semiconductor pillar. In an erase operation, the control unit performs: a first operation setting the wiring at a first potential and the electrode film at a second potential lower than the first potential during a first period; and a second operation setting the wiring at a third potential and the electrode film at a fourth potential lower than the third potential during a second period after the first operation. A length of the second period is shorter than the first period, and/or a difference between the third and fourth potentials is smaller than a difference between the first and second potentials.

Abstract: A semiconductor memory device includes a memory cell array of NAND cell units. The NAND cell unit includes a plurality of electrically erasable programmable nonvolatile memory cells connected serially, and a first and a second selection transistor provided to connect both ends of the memory cells to a bit line and a source line, respectively. The semiconductor memory device also includes dummy cells inserted in the NAND cell unit adjacent to the first and second selection transistors, respectively. The dummy cells in the NAND cell unit are erased simultaneously with the memory cells under a weaker erase potential condition than that for the memory cells and set in a higher threshold distribution than an erased state of the memory cells.

Abstract: Memories with low power consumption and methods for suppressing current leakage of a memory. The memory cell of the memory has a storage element and a transistor coupled in series. The invention sets a voltage across the transistor approaching to zero when the memory is not been accessed.

Abstract: The present invention describes a uniform program method and a uniform erase method of a charge trapping memory by employing a substrate transient hot electron technique for programming, and a substrate transient hot hole technique for erasing, which emulate an FN tunneling method for NAND memory operation. The methods of the present invention are applicable to a wide variety of charge trapping memories including n-channel or p-channel SONOS types of memories and floating gate (FG) type memories. the programming of the charge trapping memory is conducted using a substrate transient hot electron injection in which a body bias voltage Vb has a short pulse width and a gate bias voltage Vg has a pulse width that is sufficient to move electrons from a channel region to a charge trapping structure.

Abstract: A memory structure includes a first memory cell and a second memory cell located at an identical bit line and adjacent to the first memory cell. Each memory cell includes a substrate, a source, a drain, a charge storage device, and a gate. A method for programming the memory structure includes respectively providing a first gate biasing voltage and a second gate biasing voltage to the first memory cell and the second memory cell, boosting the absolute value of a channel voltage of the first memory cell to generate electron and hole pairs at the drain of the second memory cell through gate-induced drain leakage or band-to-band tunneling, and injecting the electron of the generated electron and hole pairs into the charge storage device of the first memory cell to program the first memory cell.

Abstract: A memory system includes memory cells arranged in sectors. A decoder corresponding to a sector disables memory cells having a defective top gate. The decoder may include a low voltage or high voltage latch for the disabling. A top gate handling algorithm is included. The memory system may include dynamic top gate coupling. A programming algorithm and waveforms with top gate handling is included.

Abstract: An injection method for non-volatile memory cells with a Schottky source and drain is described. Carrier injection efficiency is controlled by an interface characteristic of silicide and silicon. A Schottky barrier is modified by controlling an overlap of a gate and a source/drain and by controlling implantation, activation and/or gate processes.

Abstract: Disclosed is a semiconductor storage device comprising a semiconductor substrate, a first and a second impurity diffusion layer formed in the semiconductor substrate, a gate insulating film formed on the semiconductor substrate, and a first gate electrode formed on the semiconductor substrate via the gate insulating film. The gate insulating film has a nitrogen-containing silicon oxide film inside, and a silicon oxide film is so arranged on both sides of the nitrogen-containing silicon oxide film as to sandwich the nitrogen-containing silicon oxide film. In addition, the nitrogen composition in the nitrogen-containing silicon oxide film is increased from the semiconductor substrate side to the first gate electrode side.

Abstract: A nonvolatile trap charge storage cell selects a logic interconnect transistor uses in programmable logic applications, such as FPGA. The nonvolatile trap charge element is an insulator located under a control gate and above an oxide on the surface of a semiconductor substrate. The preferred embodiment is an integrated device comprising a word gate portion sandwiched between two nonvolatile trap charge storage portions, wherein the integrated device is connected between a high bias, a low bias and an output. The output is formed by a diffusion connecting to the channel directly under the word gate portion. The program state of the two storage portions determines whether the high bias or the low bias is coupled to a logic interconnect transistor connected to the output diffusion.

Abstract: An erase method of a nonvolatile semiconductor memory device including a semiconductor substrate with diffusion regions spaced from each other, a first insulating layer formed on the semiconductor substrate, a first gate electrode formed in a first area on the first insulating layer, a charge accumulation layer formed in a second area on the first insulating layer, a second insulating layer formed on the charge accumulation layer and a second gate electrode formed on the second insulating layer includes a step of injecting hot holes into the charge accumulation layer from the diffusion region and a step of injecting channel hot electrons into a part of the charge accumulation layer close to the first gate electrode side.

Abstract: A nonvolatile trap charge storage cell selects a logic interconnect transistor uses in programmable logic applications, such as FPGA. The nonvolatile trap charge element is an insulator located under a control gate and above an oxide on the surface of a semiconductor substrate. The preferred embodiment is an integrated device comprising a word gate portion sandwiched between two nonvolatile trap charge storage portions, wherein the integrated device is connected between a high bias, a low bias and an output. The output is formed by a diffusion connecting to the channel directly under the word gate portion. The program state of the two storage portions determines whether the high bias or the low bias is coupled to a logic interconnect transistor connected to the output diffusion.

Abstract: The present invention describes systems and methods to for providing stable and programmable voltage and current reference devices. An exemplary embodiment of the present invention provides a voltage reference device having a first floating-gate transistor with a first source, a first drain, and a first gate. The first gate is provided coupled to a first programming capacitor and a first input capacitor. Furthermore, the voltage reference device includes a second floating-gate transistor having a second source, a second drain, and a second gate. The second gate is provided coupled to a second programming capacitor and a second input capacitor. Additionally, the charge difference between the first floating-gate transistor and the second floating-gate transistor is a reference voltage.

Abstract: A nonvolatile semiconductor memory device capable of preventing the disturb phenomenon that could become a serious problem as the nonvolatile memory having a virtual grounding bit line is miniaturized includes a program row voltage application circuit for applying a predetermined program row voltage to the selected word line in programming in the selected memory cell, a program column voltage application circuit for applying a ground voltage to one of a pair of selected bit lines and applying a predetermined program column voltage to the other of the selected bit lines in programming; and a counter voltage application circuit for applying a counter voltage of an intermediate voltage between the ground voltage and program column voltage, to an adjacent unselected bit line not connected to the selected memory cell in the first and second bit lines and adjacent to the selected bit line to which the program column voltage is applied.

Abstract: A non-volatile memory device may include a plurality of stacked semiconductor layers, a plurality of NAND strings, a common bit line, a common source line, and/or a plurality of string selection lines. The plurality of NAND strings may be on the plurality of semiconductor layers. Each of the plurality of NAND strings may include a plurality of memory cells and/or at least one string selection transistor arranged in a NAND-cell array. The common bit line may be commonly connected to each of the NAND strings at a first end of the memory cells. The common source line may be commonly connected to each of the NAND strings at a second end of the memory cells. The plurality of string selection lines may be coupled to the at least one string selection transistor included in each of the NAND strings such that a signal applied to the common bit line is selectively applied to the NAND strings.

Abstract: A semiconductor memory device includes memory cells, a source line, a word line, a bit line, and a driver circuit. The memory cells are formed on a semiconductor layer and have a charge accumulation layer and a control gate on the charge accumulation layer. The word line is connected to gate of the memory cell. The bit line is electrically connected to a drain of the memory cell. The source line is electrically connected to a source of the memory cell. The driver circuit varies potential of the semiconductor layer in conjunction with potential of the source line.

Abstract: A memory system includes memory cells arranged in sectors. A decoder corresponding to a sector disables memory cells having a defective top gate. The decoder may include a low voltage or high voltage latch for the disabling. A top gate handling algorithm is included. The memory system may include dynamic top gate coupling. A programming algorithm and waveforms with top gate handling is included.

Abstract: The degree of integration and the number of rewriting of a semiconductor device having a nonvolatile memory element are improved. A first MONOS nonvolatile-memory-element and a second MONOS nonvolatile-memory-element having a large gate width compared with the first MONOS nonvolatile-memory-element are mounted together on the same substrate, and the first MONOS nonvolatile-memory-element is used for storing program data which is scarcely rewritten, and the second MONOS nonvolatile-memory-element is used for storing processed data which is frequently rewritten.

Abstract: Systems and methods that facilitate improved programming memory cells in a nonvolatile memory (e.g., flash memory) are presented. An optimized voltage component can facilitate supplying respective voltages to a source, drain, and gate associated with a memory cell during operations, such as programming operations. The optimized voltage component can facilitate supplying a predetermined source bitline voltage to a memory cell during programming of the cell to facilitate reducing leakage currents associated with the bitlines, which can improve programming of the memory cell, and to facilitate reducing the programming current, which can result in power efficient programming and improved programming speed.

Abstract: A non-volatile memory (NVM) cell and array includes a control capacitor, tunneling capacitor, CMOS inverter and output circuit. The CMOS inverter includes PMOS and NMOS inverter transistors. The control capacitor, tunneling capacitor and PMOS and NMOS inverter transistors share a common floating gate, which is programmed/erased by Fowler-Nordheim tunneling. The output circuit includes PMOS and NMOS select transistors. The PMOS inverter and select transistors share a common source/drain region. Similarly, the NMOS inverter and select transistors share a common source/drain region. This configuration minimizes the required layout area of the non-volatile memory cell and allows design of arrays with smaller footprints. Alternately, the tunneling capacitor may be excluded, further reducing the required layout area of the NVM cell.

Abstract: A method is provided for programming a memory cell. The memory cell is fabricated on a substrate and comprises a source region, a drain region, a floating gate, and a control gate. The memory cell has a threshold voltage selectively configurable into one of at least three programming states. The method includes generating a drain current between the drain region and the source region by applying a drain-to-source bias voltage between the drain region and the source region. The method further includes injecting hot electrons from the drain current to the floating gate by applying a gate voltage to the control gate. A selected threshold voltage for the memory cell corresponding to a selected one of the programming states is generated by applying a different selected gate voltage.

Abstract: A semiconductor memory device includes a memory cell array of NAND cell units. The NAND cell unit includes a plurality of electrically erasable programmable nonvolatile memory cells connected serially, and a first and a second selection transistor provided to connect both ends of the memory cells to a bit line and a source line, respectively. The semiconductor memory device also includes dummy cells inserted in the NAND cell unit adjacent to the first and second selection transistors, respectively. The dummy cells in the NAND cell unit are erased simultaneously with the memory cells under a weaker erase potential condition than that for the memory cells and set in a higher threshold distribution than an erased state of the memory cells.

Abstract: A non-volatile semiconductor memory device with good write/erase characteristics is provided. A selection gate is formed on a p-type well of a semiconductor substrate via a gate insulator, and a memory gate is formed on the p-type well via a laminated film composed of a silicon oxide film, a silicon nitride film, and a silicon oxide film. The memory gate is adjacent to the selection gate via the laminated film. In the regions on both sides of the selection gate and the memory gate in the p-type well, n-type impurity diffusion layers serving as the source and drain are formed. The region controlled by the selection gate and the region controlled by the memory gate located in the channel region between said impurity diffusion layers have the different charge densities of the impurity from each other.

Abstract: An apparatus, system, and computer-implemented method for controlling data transfer between a plurality of serial data link interfaces and a plurality of memory banks in a semiconductor memory is disclosed. In one example, a flash memory device with multiple links and memory banks, where the links are independent of the banks, is disclosed. The flash memory devices may be cascaded in a daisy-chain configuration using echo signal lines to serially communicate between memory devices. In addition, a virtual multiple link configuration is described wherein a single link is used to emulate multiple links.

Abstract: Flash memory systems and methodologies are provided herein for facilitating a single logical cell erasure and dynamic erase state. The single logical cell erasure can be accomplished on a basis of a single program and erase entity which is a combination of neighboring drain/source regions of two adjacent physical memory cells. The dynamic erase state can involve an indicator bit that indicates an erase direction of a low voltage state or a high voltage state. The single logical cell erasure can be performed by changing a voltage state of a single program and erase entity according to the indicated erase direction. By employing the indicator bit with the single program and erase entity decoding scheme, the methods and systems can reduce erase time and/or a number of cycles, thereby increasing system reliability, efficiency, and/or durability.

Abstract: A method of fabricating a semiconductor device and a flash memory device are provided. The method of fabricating the semiconductor device includes: forming a nitride film on a semiconductor substrate; forming a sacrificial vertical structure on the nitride film; forming sacrificial spacers on lateral surfaces of the sacrificial vertical structure; performing an initial patterning of the nitride film using the sacrificial vertical structure and the sacrificial spacers as etch masks; removing the sacrificial spacers after the initial patterning of the nitride film and forming gate electrodes on the lateral surfaces of the sacrificial vertical structure; and removing the sacrificial vertical structure from between the gate electrodes and performing a secondary patterning of the nitride film using the gate electrodes as etch masks.

Abstract: Flash memory systems and methodologies are provided herein for using a high voltage state as an erase condition in a flash device. Logical cell mapping is changed from using a single physical memory cell to using two adjacent physical cells as a single logical cell, thereby creating a single program and erase entity. Logical cell erase, program, and/or read can be accomplished by using two channel regions in union. This combination can allow for single logical cell erasure in a flash device and the use of a high voltage state as an erased state. A default erased state can be a high voltage state. As a result, program operations can be performed by changing a voltage state of the single program and erase entity to a low voltage state, and erase operations can be performed by changing a voltage state of the single program and erase entity to a high voltage state.

Abstract: Flash memory systems and methodologies are provided herein for providing byte alterability in a flash device. Logical cell mapping is changed from using a single physical memory cell to using two adjacent physical cells as a logical cell for emulating byte alterability. By mapping two adjacent physical cells as a single logical cell, the logical cell is a combination of neighboring drain/source regions, thereby creating a single program and erase entity. The single program and erase entities can allow for logical cell erase and program in either direction of a low voltage state or a high voltage state on a single bit or variable bit length basis. By employing the single program and erase entity, the subject innovation can provide a cost-effective approach to emulating electrically EEPROM in a flash device.

Abstract: Systems and methods are disclosed including memory cells arranged in sectors. In one exemplary implementation, each memory cell may include a top gate, a source, a top gate line coupling memory cells in a sector, and a word line coupling memory cells together. Moreover, the top gate line may be dynamically coupled to the word line. Other exemplary implementations may relate to drivers for driving the word line and/or top gate line, multilevel memory cell, and/or floating gate line features.

Abstract: A memory system includes memory cells arranged in sectors. A decoder corresponding to a sector disables memory cells having a defective top gate. The decoder may include a low voltage or high voltage latch for the disabling. A top gate handling algorithm is included. The memory system may include dynamic top gate coupling. A programming algorithm and waveforms with top gate handling is included.