Abstract: A method of controlling a memory device can include: receiving, by an interface, a write command from a host; beginning execution of a write operation on a first array plane of a memory array in response to the write command, where the memory array includes a plurality of memory cells arranged in a plurality of array planes; receiving, by the interface, a read command from the host; reconfiguring the write operation in response to detection of the read command during execution of the write operation; beginning execution of a read operation on a second array plane in response to the read command; and restoring the configuration of the write operation after the read operation has at least partially been executed.

Abstract: Systems, apparatuses, and methods for performing efficient memory accesses for a computing system are disclosed. In various embodiments, a computing system includes a computing resource and a memory controller coupled to a memory device. The computing resource selectively generates a hint that includes a target address of a memory request generated by the processor. The hint is sent outside the primary communication fabric to the memory controller. The hint conditionally triggers a data access in the memory device. When no page in a bank targeted by the hint is open, the memory controller processes the hint by opening a target page of the hint without retrieving data. The memory controller drops the hint if there are other pending requests that target the same page or the target page is already open.

Abstract: A cache is presented. The cache comprises a tag array configured to store one or more tag addresses; a tag control buffer configured to store cache control information; a data array configured to store data acquired from a memory device; and a write buffer configured to store information related to a write request. The tag array is configured to be accessed independently from the tag control buffer, and the data array is configured to be accessed independently from the write buffer.

Abstract: A memory circuit according to an embodiment includes: a first inverter circuit including a first p-channel MOS transistor and a first n-channel MOS transistor; a second inverter circuit cross-coupled with the first inverter and including a second p-channel MOS transistor and a second n-channel MOS transistor; a third n-channel MOS transistor in which one of a source and drain terminals is connected to a first output terminal of the first inverter circuit, and a gate terminal is connected to a first wiring line; a fourth n-channel MOS transistor connected to the third n-channel MOS transistor; a fifth n-channel MOS transistor in which one of a source and drain terminals is connected to a second output terminal of the second inverter circuit; and a sixth n-channel MOS transistor connected to the fifth n-channel MOS transistor.

Abstract: A memory system includes a memory controller comprising n (where n>2) first data input/output terminals, a first semiconductor chip comprising n second data input/output terminals, each of the second data input/output terminals being connected to a respective one of the first data input/output terminals, and a second semiconductor chip comprising n third data input/output terminals, each of the third data input/output terminals being connected to a respective one of the first data input/output terminals. When a first request signal is output from the memory controller, status data of the first semiconductor chip is output from a first of the second data input/output terminals that is connected to a first of the first data input/output terminals, and status data of the second semiconductor chip is output from a second of the third data input/output terminals that is connected to a second of the first data input/output terminals.

Abstract: Apparatuses, systems, methods, and computer program products are disclosed for accessing non-volatile memory. An apparatus includes one or more memory die. A memory die includes an array of non-volatile memory cells, a set of ports, and an on-die controller. A set of ports includes a first port and a second port. A first port includes a first plurality of electrical contacts and a second port includes a second plurality of electrical contacts. An on-die controller communicates via a set of ports to receive command and address information and to transfer data for data operations on an array of non-volatile memory cells. An on-die controller uses a first port to receive command and address information and to transfer data. An on-die controller uses a second port to transfer data but not to receive command and address information.

Abstract: The independent claims of this patent signify a concise description of embodiments. Disclosed is technology for reducing write disturbance while writing data into a first SRAM cell and accessing a second SRAM cell in a row of SRAM cells. This Abstract is not intended to limit the scope of the claims.

Abstract: Apparatuses for executing row hammer refresh are described. An example apparatus includes: memory banks, each memory bank of the memory banks includes: a latch that stores a row address; and a time based sampling circuit. The time based sampling circuit includes: a sampling timing generator that provides a timing signal of sampling a row address; and a plurality of bank sampling circuits, wherein each bank sampling circuit of the bank sampling circuits is included in a corresponding memory bank of the memory banks and provides a sampling signal to the latch in the corresponding memory bank responsive to the timing signal of sampling the row address; and an interval measurement circuit that receives an oscillation signal, measures an interval of a row hammer refresh execution based on a cycle of the oscillation signal, and further provides a steal rate timing signal for adjusting a steal rate to the sampling timing generator.

Abstract: A production control apparatus includes a workpiece position detection unit, an ID generation unit, an ID notification unit, a data receiving unit, and a storage unit. The data receiving unit receives the unique IDs generated by the ID generation unit and the traceability data (actual production information) when the workpieces for which the unique IDs have been generated are processed, from the manufacturing machines to which the unique IDs have been notified by the ID notification unit. The storage unit records the unique IDs and the traceability data received by the data receiving unit in association with each other.

Abstract: A system comprising a memory controller coupled to a memory device is described. The memory device is coupled to, and is external to, the memory controller. The memory device includes a storage array having dual configurability to support both synchronous and asynchronous modes of operation.

Abstract: Transpose static random access memory (SRAM) bit cells configured for horizontal and vertical read operations are disclosed. In one aspect, a transpose SRAM bit cell includes cross-coupled inverters and horizontal and vertical read access transistors. A word line in first metal layer having an axis in a first direction is electrically coupled to a gate node of the horizontal read access transistor, and a bit line in second metal layer having an axis disposed in a second direction substantially orthogonal to the first direction is electrically coupled to the horizontal read access transistor. A transpose word line in third metal layer having an axis disposed in the second direction is electrically coupled to a gate node of the vertical read access transistor, and a transpose bit line in fourth metal layer having an axis disposed in the first direction is electrically coupled to the vertical read access transistor.

Abstract: An apparatus and method for timestamping data packets are provided. The apparatus includes an input bit counter responsive to input bits entering a physical layer (PHY) device and an output bit counter responsive to output bits transmitted by the PHY device. A timestamp for an incoming bit is calculated based on a number of bits awaiting transmission by the PHY device at the time of arrival of the incoming bit. The number of bits awaiting transmission by the PHY device is determined based on the first count and the second count.

Abstract: In an approach to activating at least one memory core circuit of a plurality of memory core circuits in an integrated circuit, one or more computer processors activate a clock signal of a currently selected memory core circuit. The one or more computer processors activate the clock signal of a previously selected memory core circuit to allow the previously selected memory core circuit to be set to a deselected operating mode. The one or more computer processors forward an output bit generated by a memory core circuit selected from a plurality of memory core circuits to a multiplexed bit line.

Abstract: Provided is a semiconductor device capable of reducing its area, operating at a high speed, or reducing its power consumption. A circuit 50 is used as a memory circuit with a function of performing an arithmetic operation. One of a circuit 80 and a circuit 90 has a region overlapping with at least part of the other of the circuit 80 and the circuit 90. Accordingly, the circuit 50 can perform the arithmetic operation that is essentially performed in the circuit 60; thus, a burden of the arithmetic operation on the circuit 60 can be reduced. Moreover, the number of times of data transmission and reception between the circuits 50 and 60 can be reduced. Furthermore, the circuit 50 functioning as a memory circuit can have a function of performing an arithmetic operation while the increase in the area of the circuit 50 is suppressed.

Abstract: A storage device includes a connector including a plurality of connection terminals connectable to an external device and a nonvolatile memory including a secure area and a normal area. The secure area is accessible when the secure signal indicates the secure mode, and the normal area is accessible when the secure signal indicates the non-secure mode. One of the plurality of connection terminals corresponds to a secure signal terminal for receiving a secure signal that indicates a secure mode or a non-secure mode.

Abstract: A tri-state circuit that includes a control circuit coupled to a driver circuit. The driver circuit includes a first type of transistor connected in series with a second type of transistor. The control circuit receives an input data signal at an input data rate and a plurality of clock signals, and supplies a first signal and a second signal to the first type of transistor and the second type of transistor in response to the receipt of the input data signal. The control circuit further controls a tri-state switching operation of the first type of transistor and the second type of transistor such that the input data signal is selected and an output data signal is generated at an output data rate. The tri-state circuit is further utilized in other digital circuits, such as latch circuits, latch-based memory circuits or parallel-to-serial converter circuits to reduce inter symbol interference.

Abstract: The systems, apparatus, methods, and computer program products described herein provide the capability for an entity to identify and autonomously contract via a blockchain database with an unknown and anonymous host device for access rights to a high volume raw data stream generated by a sensor of the host device. The systems, apparatus, methods, and computer program products further provide the capability for the entity to push or upload a software module to the host device to allow the entity to process the high volume raw data stream into a low volume data stream directly on the host device, i.e., at the source of the high volume raw data stream.

Abstract: A data storage device includes a first nonvolatile memory device including first LSB, CSB and MSB pages; a second nonvolatile memory device including second LSB, CSB and MSB pages; a data cache memory is configured to store data write-requested from a host device; and a control unit suitable for configuring the first and second LSB pages as an LSB super page, configuring the first and second CSB pages as a CSB super page, and configuring the first and second MSB pages as an MSB super page, wherein the control unit is configured to one-shot programs the data stored in the data cache memory in the first LSB, CSB and MSB pages when determination is made as a data stability mode, and is configured to one-shot programs data stored in the data cache memory in the LSB, CSB and MSB super pages in a performance-improving mode.

Abstract: An integrated circuit includes a first plurality of flip flops; a first bank of resistive memory cells, wherein each flip flop of the first plurality of flip flops uniquely corresponds to a resistive memory cell of the first bank of resistive memory cells; write circuitry configured to store data from the first plurality of flip flops to the first bank of resistive memory cells; and read circuitry configured to read data from the first bank of resistive memory cells and provide the data from the first bank for storage into the first plurality of flip flops.

Abstract: Memories with symmetric read current profiles are provided. A memory includes a first memory array formed by a plurality of memory cells, a second memory array formed by a plurality of memory cells, and a read circuit. The read circuit includes a first decoder coupled to the first memory array, a second decoder coupled to the second memory array, and an output buffer. The first decoder obtains first data from the first memory array according a first address signal. The second decoder obtains second data from the second memory array according the first address signal. The output buffer selectively provides the first data or the second data as an output according to a control signal. The first data is complementary to the second data.

Abstract: The present disclosure provides a dynamic random access memory (DRAM) and a method of operating the same. The DRAM includes a memory array, a refresh device and an access device. The refresh device is configured to perform a self-refresh operation on the memory array, wherein the self-refresh operation is interrupted in response to an access command. The access device is configured to access the memory array in response to the access command and the interruption of the self-refresh operation.

Abstract: A device includes a memory array including a first sub-bank, a second sub-bank, a first strap cell and a data line. The first strap cell is arranged between the first sub-bank and the second sub-bank. The data line includes a first portion and a second portion. The first portion is arranged across the first sub-bank. The second portion is arranged across the second sub-bank, and is coupled to the first portion via the first strap cell.

Abstract: A memory device may include a data output controller for generating a first clock signal and a second clock signal in response to a read enable clock signal, a page buffer for storing data, and outputting the data to the data output controller in synchronization with the first clock signal, and a data output buffer for receiving the data from the page buffer and outputting the received data to the external device in synchronization with the second clock signal. The first clock signal is generated in response to a data output delay control signal, the second clock signal is generated irrespective of the data output delay control signal.

Abstract: An integrated circuit device includes a first memory cell that stores data representative of configuration data when operating in a first mode, wherein the first memory cell stores data representative of user-accessible data when operating in a second mode. The integrated circuit device also includes a second memory cell that stores a value indicating whether the first memory cell is operating in the first mode or is operating in the second mode. The integrated circuit device further includes a switch coupled to the first memory cell and controlled by the second memory cell, wherein the switch provides a defined value to be read in place of the stored data of the first memory cell when the second memory cell stores the value indicating that the first memory cell is operating in the second mode.

Abstract: Apparatuses for executing row hammer refresh are described. An example apparatus includes: memory banks, each memory bank of the memory banks includes: a latch that stores a row address; and a time based sampling circuit. The time based sampling circuit includes: a sampling timing generator that provides a timing signal of sampling a row address; and a plurality of bank sampling circuits, wherein each bank sampling circuit of the bank sampling circuits is included in a corresponding memory bank of the memory banks and provides a sampling signal to the latch in the corresponding memory bank responsive to the timing signal of sampling the row address; and an interval measurement circuit that receives an oscillation signal, measures an interval of a row hammer refresh execution based on a cycle of the oscillation signal, and further provides a steal rate timing signal for adjusting a steal rate to the sampling timing generator.

Abstract: P-type Field-effect Transistor (PFET)-based sense amplifiers for reading PFET pass-gate memory bit cells (“bit cells”). Related methods and systems are also disclosed. Sense amplifiers are provided in a memory system to sense bit line voltage(s) of the bit cells for reading the data stored in the bit cells. It has been observed that as node technology is scaled down in size, PFET drive current (i.e., drive strength) exceeds N-type Field-effect Transistor (NFET) drive current due for like-dimensioned FETs. In this regard, in one aspect, PFET-based sense amplifiers are provided in a memory system to increase memory read times to the bit cells, and thus improve memory read performance.

Abstract: A display may have an array of pixels controlled by display driver circuitry. Gate driver circuitry supplies gate line signals to rows of the pixels. The gate driver circuitry may include gate driver integrated circuits. Each gate driver integrated circuit may have a shift register that supplies the gate line signals to the rows of pixels. The display driver circuitry supplies a clock signal to the gate driver integrated circuits. Each gate driver integrated circuit may have one or more clock trees that are selectively enable and disabled. Each gate driver integrated circuit may have a controller and a buffer that is controlled by a control signal from the controller. The buffer may be adjusted to supply or to not supply the clock signal to an associated clock tree in that gate driver integrated circuit.

Abstract: A memory device can include: a memory array comprising a plurality of memory cells; an interface configured to receive a suspend command and first and second write commands from a host, where the second write command is of higher priority and follows the first write command; a status register configured to store an automatic resume enable bit; a memory controller configured to suspend, in response to the suspend command, a first write operation that is executing the first write command on the memory array; the memory controller being configured to execute a second write operation on the memory array in response to the second write command; and the memory controller being configured to resume the first write operation upon completion of the second write operation in response to the automatic resume enable bit being set.

Abstract: In an aspect of the disclosure, an apparatus is provided. In one aspect, the apparatus is a memory apparatus. The memory apparatus includes a memory. The memory includes first and second bitcell arrays. The memory apparatus also includes a sense amplifier. The sense amplifier is shared by the first and the second bitcell arrays. Additionally, the sense amplifier is configured to amplify data stored in the memory during a read operation. The memory apparatus also includes a write circuit. The write circuit is configured to write data to the memory during a write operation. The memory apparatus also includes a controller. The controller is configured to disable the write circuit during the read operation.

Abstract: Unlike prior RAM-based shift register circuits, the presently-disclosed shift register circuit does not require control circuits to generate write and read address signals. Instead, the presently-disclosed shift register circuit utilizes a portion of RAM to store and provide the write and read address signals. The write and read addresses are output from the data output port of the RAM, and received by the write and read address ports of the RAM. Advantageously, the presently-disclosed shift register circuit requires less area to implement because the need for write and read control circuits is eliminated.

Abstract: Electronic devices and memory management methods thereof are provided. Memory management methods may include setting page data of a nonvolatile memory as a read/write mode, copying the page data of the nonvolatile memory to a dynamic random access memory (DRAM) and setting the page data of the DRAM copied from the nonvolatile memory as a read only mode.

Abstract: The present disclosure relates to a dynamic random access memory (DRAM) array, which comprises a plurality of bit lines connectable, respectively, to at least two row buffers of the DRAM array. The two row buffers are respectively connectable to data input/output (I/O) lines and are configured to electrically connect the two row buffers to the bit lines and data I/O lines in a mutually exclusive manner.

Abstract: A memory device can include: a memory array comprising a plurality of memory cells; an interface configured to receive a suspend command and first and second write commands from a host, where the second write command is of higher priority and follows the first write command; a status register configured to store an automatic resume enable bit; a memory controller configured to suspend, in response to the suspend command, a first write operation that is executing the first write command on the memory array; the memory controller being configured to execute a second write operation on the memory array in response to the second write command; and the memory controller being configured to resume the first write operation upon completion of the second write operation in response to the automatic resume enable bit being set.

Abstract: A technique is presented for performing a physical unclonable function (PUF) using an array of SRAM cells. The technique can be viewed as an attempt to read multiple cells in a column at the same time, creating contention that is resolved according to process variation. An authentication challenge is issued to the array of SRAM cells by activating two or more wordlines concurrently. The response is simply the value that the SRAM produces from a read operation when the challenge condition is applied. The number of challenges that can be applied the array of SRAM cells grows exponentially with the number of SRAM rows and these challenges can be applied at any time without power cycling.

Abstract: A semiconductor device includes a stacked plurality of memory chips. The memory chips each include a plurality of memory banks, a plurality of read/write buses that are assigned to the respective memory banks, and a plurality of penetration electrodes that are assigned to the respective read/write buses and arranged through the memory chip. Penetration electrodes arranged in the same positions as seen in a stacking direction are connected in common between the chips. In response to an access request, the memory chips activate the memory banks that are arranged in respective different positions as seen in the stacking direction, whereby data is simultaneously input/output via the penetration electrodes that lie in different planar positions.

Abstract: A semiconductor device according to an aspect of the present invention has: a plurality of memory cells MC; a plurality of word lines WL each coupled to a corresponding one of the plurality of memory cells MC; and a control circuit that intermittently monitors accesses to the plurality of word lines WL, stores/erases some captured row-addresses in a first number of registers, and detects, by comparison with stored addresses, in response to a first number of accesses to one of the word lines WL in a first period of time. According to the present invention, access histories can be precisely analyzed by a small-scale circuit configuration, and measures against, for example, the Row Hammer problem, etc. can be taken.

Abstract: A semiconductor device may include an inversion control signal generation circuit, a pattern control signal generation circuit, and a data input/output (I/O) circuit. The inversion control signal generation circuit may generate an inversion control signal according to a logic level combination of bit patterns included in at least one of a first address and a second address. The pattern control signal generation circuit may generate a pattern control signal from a pre-control signal in response to the inversion control signal. In response to the pattern control signal, the data input/output (I/O) circuit may generate data signals that will be output to an internal I/O line based on data signals loaded on a local I/O line.

Abstract: In a multi-port memory, a first pulse signal generator circuit generates a first pulse signal following input of a clock signal. A first latch circuit sets a first start signal to a first state in response to generation of the first pulse signal, and resets the first start signal to a second state in response to a first delayed signal obtained by delaying the first start signal by a delay circuit. A second pulse signal generator circuit generates a second pulse signal following input of the first delayed signal. A first latch circuit sets a second start signal to the first state and holds this state in response to generation of the second pulse signal, and resets the second start signal to the second state in response to a second delayed signal obtained by delaying the second start signal by the delay circuit. The memory operates based on start signals.

Abstract: Systems and methods are disclosed for processing data access requests received from a direct access storage (DAS) interface and/or a network access storage (NAS) interface. The data access requests may be received from the DAS interface and the NAS interface substantially simultaneously. The data access requests may be scheduled based on priorities for the data access requests.

Abstract: Embodiments described include systems, apparatuses, and methods using sectored dynamic random access memory (DRAM) cache. An exemplary apparatus may include at least one hardware processor core and a sectored dynamic random access (DRAM) cache coupled to the at least one hardware processor core.

Abstract: A gain cell includes a write bit line input, a read bit line output, a write trigger input and a read trigger input. The write element writes a data level from the write bit line input to the gain cell when triggered by the write trigger input. The retention element buffers between an internal buffer node and an internal storage node during data retention. The retention element also connects or disconnects the buffer node to a first constant voltage according to the data level being retained in the gain cell. The read element decouples the storage node from the read bit line output during data read. The read element also connects and disconnects the read bit line output to a second constant voltage according to the data level being read from the gain cell.

Abstract: The invention relates to a memory aggregation device for storing a set of input data streams and retrieving data to a set of output data streams, the memory aggregation device comprising: a set of first-in first-out (FIFO) memories each comprising an input and an output; an input interconnector configured to interconnect each one of the set of input data streams to each input of the set of FIFO memories according to an input interconnection matrix; an output interconnector configured to interconnect each output of the set of FIFO memories to each one of the set of output data streams according to an output interconnection matrix; an input selector; an output selector; and a memory controller.

Abstract: Disclosed are various embodiments for customizing component configurations used in utility computing. A selection of a subset of a set of hardware components is received from a customer. A request is received from the customer to allocate a machine instance on a customized computing device within a networked plurality of computing devices. The customized computing device includes the subset of the set of hardware components. A deployment of the machine instance on the customized computing device is initiated in response to the request.

Abstract: In a method of operating a semiconductor memory device, a program command is received, and a program operation is performed to increase threshold voltages of memory cells to be programmed by applying a program pulse to a word line. Page data is read from the selected memory cells by applying a verification voltage to the word line, and it is determined whether the number of memory cells corresponding to a program pass is greater than a determined number, based on the page data. A status fail signal is output based on the determination result.

Abstract: Examples of the present disclosure provide apparatuses and methods for vertical bit vector shift in a memory. An example method comprises storing a vertical bit vector of data in a memory array, wherein the vertical bit vector is stored in memory cells coupled to a sense line and a plurality of access lines and the vertical bit vector is separated by at least one sense line from a neighboring vertical bit vector; and performing, using sensing circuitry, a vertical bit vector shift of a number of elements of the vertical bit vector.

Abstract: A non-volatile semiconductor memory device is provided. A determination circuit 200 used to determine the suspected qualification is connected with a plurality of page buffer/sensing circuits 170 via wirings PB_UP, PB_MG, PB_DIS. The page buffer/sensing circuit 170 includes a transistor Q2 in which a reference current Iref flows through a transistor Q1 when the programming verification is unqualified. The determination circuit 200 includes a comparator CMP, a voltage of the wiring PB_UP is supplied to one of input terminals of the comparator CMP, and a reference voltage Vref is supplied to another one of the input terminals. The reference voltage Vref is generated by a reference current (Iref*N) whose amount is corresponding to an unqualified bit number (N) which is determined to be suspectedly qualified.

Abstract: A host write is received which includes a write address and write data. It is determined if the write address is already stored in at least one of a plurality of open blocks. If so, a collision open block is determined at least the write data is stored in the collision open block. In the event it is determined that the write address is not already stored in at least one of the plurality of open blocks, a temperature for the host write is determined and at least the write data is stored in an open block associated with the temperature.

Abstract: A memory access command, column address and plurality of write data values are received within an integrated-circuit memory chip via external signaling links. In response to the memory access command, the integrated-circuit memory chip (i) decodes the column address to select address-specified sense amplifiers from among a plurality of sense amplifiers that constitute a sense amplifier bank, (ii) reads first data, constituted by a plurality of read data values, out of the address-specified sense amplifiers, and (iii) overwrites the first data within the address-specified sense amplifiers with second data constituted by one or more of the write data values and by one or more of the read data values.

Abstract: An integrated circuit (IC) having a clock switch that switches the system clock between an internal clock and an external clock based on whether or not the IC has finished downloading device configuration at boot and on whether or not the internal clock is functional. Further restrictions on the use of the external clock are imposed by the clock switch based on a life-cycle state of the IC. The use of the clock switch makes it significantly more difficult for the clock to be tampered with, thereby protecting the security settings of the IC and/or preventing unauthorized access to secure data stored on the IC using an external-clock-based security attack.

Abstract: In some examples, a memory device is configured to receive a precharge command and an activate command. The memory device performs a first series of events related to the precharge command in response to receiving the precharge command and a second series of events related to the activate command in response to receiving the activate command. The memory device delays the start of the second series of events until the first series of events completes.