Abstract: Disclosed is a semiconductor memory apparatus, including: a memory cell array configured to include a plurality of memory cells; a switching unit configured to be coupled to data input and output pads and control a data transfer path of data applied to the data input and output pads in response to a test mode signal; a write driver configured to drive data transferred from the switching unit and write the data in the memory cell array at a normal mode; and a controller configured to transfer the data from the switching unit to the memory cell at a test mode.

Abstract: Some embodiments regard a method comprising: controlling a row of cells of a memory array with a first signal; controlling a column of cells of the memory array with a second signal; transferring data from a cell activated by both the first signal and the second signal to a pair of bit lines associated with the cell; and using the data from the pair of bit lines as read data and as data written back to the cell to ensure the cell stores valid data.

Abstract: In a memory cell array, a plurality of memory cells connected to word lines and bit lines are arranged in a matrix. A data storage circuit is connected to the bit lines and stores write data. The data storage circuit includes at least one static latch circuit and a plurality of dynamic latch circuits when setting 2k threshold voltages (k is a natural number equal to 3 or more) in each memory cell in the memory cell array. A control circuit refreshes data by moving the data in one of the plurality of dynamic latch circuits to the static latch circuit and further moving the data in the static latch circuit to one of the plurality of dynamic latch circuits.

Abstract: A module for controlling integrity properties of a data stream input into a device, such as a machine for manufacturing or a management system related to such machines. A plurality of control items are registered in a database. At least one activable control means executes a control of one integrity property according to one of several registered control items. A list is attached to the database with selectable links for activating at least one of the control means. Configuration means perform on at least one of the links a chronological selection according to a predefined management profile on integrity properties of the data stream in order to introduce a selectable relative time delay between activations of control items. Due to that configuration, the integrity control thus obtained is provided with high reliability as well as in a very flexible manner.

Abstract: In a low-power signaling system, an integrated circuit device includes an open loop-clock distribution circuit and a transmit circuit that cooperate to enable high-speed transmission of information-bearing symbols unaccompanied by source-synchronous timing references. The open-loop clock distribution circuit generates a transmit clock signal in response to an externally-supplied clock signal, and the transmit circuit outputs a sequence of symbols onto an external signal line in response to transitions of the transmit clock signal. Each of the symbols is valid at the output of the transmit circuit for a symbol time and a phase offset between the transmit clock signal and the externally-supplied clock signal is permitted to drift by at least the symbol time.

Abstract: A system includes a plurality of storage devices and a controller. The plurality of storage devices are bus-connected to one clock signal line and one data signal line connected to the controller. Each of the plurality of storage devices stores identification information in advance to distinguish the storage devices from each other. The controller transmits data using an identification information transmission period in which one storage device is selected from the plurality of storage devices by transmitting the identification information of the one storage device to the plurality of storage devices via the data signal line and a data transmission period in which the data is transmitted to the one selected storage device. A frequency of a clock signal during the identification information transmission period is set to be lower than a frequency of the clock signal during the data transmission period.

Abstract: A circuit for counting in an N-bit string a number of bits M, having a first binary value includes N latch circuits in a daisy chain where each latch circuit has a tag bit that controls each to be either in a no-pass or pass state. Initially the tag bits are set according to the bits of the N-bit string where the first binary value corresponds to a no-pass state. A clock signal having a pulse train is run through the daisy chain to “interrogate” any no-pass latch circuits. It races right through any pass latch circuit. However, for a no-pass latch circuit, a leading pulse while being blocked also resets after a pulse period the tag bit from “no-pass” to “pass” state to allow subsequent pulses to pass. After all no-pass latch circuits have been reset, M is given by the number of missing pulses from the pulse train.

Abstract: A composite, hybrid memory device including a first storage die having an array of volatile storage cells and a second storage die having an array of non-volatile storage cells disposed within an integrated circuit package. The hybrid memory device includes a shared interface circuit to receive memory access commands directed to the first storage die and the second storage die and to convey read and write data between an external data path and the first and second storage dice.

Abstract: Methods for sensing, memory devices, and memory systems are disclosed. In one such memory device, a local sense circuit provides sensing of an upper group of memory cells while a global sense circuit provides sensing of a lower group of memory cells. Data sensed by the local sense circuit is transferred to the global sense circuit over local data lines or a global transfer line that is multiplexed to the local data lines. An alternate embodiment uses the local sense circuit to sense both upper and lower groups of memory cells.

Abstract: A memory includes: memory devices that each store data of one bit; and a read unit that, by using one predetermined memory device of the memory devices that are included in a memory block having a predetermined unit number of the memory devices as an inversion flag device, reads out data of (the predetermined unit number ?1) bits that is written in the other memory devices with the bits being inverted in a case where the data of one bit written in the inversion flag device is a first value representing any one of “0” and “1” and directly reads out the data of (the predetermined unit number ?1) bits that is written in the other memory devices in a case where the data of one bit written in the inversion flag device is a second value other than the first value.

Abstract: Methods of reading data from memory cells. Such methods include subjecting an analog storage device to a voltage level indicative of a threshold voltage of a memory cell to store a charge to the analog storage device, and generating an analog voltage from the stored charge.

Abstract: According to one embodiment, a semiconductor memory device includes a memory cell array, a data bus, a transfer controller, column blocks, and a column selector. The data bus is divided into stages. The transfer controller serially transfers data such that the data are respectively allocated to the stages. The column blocks temporarily stores the data. The column selector selects a column block for each of the stages from the column blocks, and transfers the data parallel between the stages and the column blocks selected for the stages. The data bus extends from one end to the other in a direction in which the column blocks are arranged, and returns from the other end to the one end.

Abstract: A memory array contains a plurality of banks coupled to each other by a plurality of data lines. Each of the data lines is divided into a plurality of segments within the array. Respective bidirectional buffers couple read data from one of the segments to another in a first direction, and to couple write data from one of the segments to another in a second direction that is opposite the first direction. The data lines may be local data read/write lines that couple different banks of memory cells to each other and to respective data terminals, digit lines that couple memory cells in a respective column to respective sense amplifiers, word lines that activate memory cells in a respective row, or some other signal line within the array. The memory array also includes precharge circuits for precharging the segments of respective data lines to a precharge voltage.

Abstract: Methods, memory devices and systems are disclosed. In one embodiment, a non-volatile memory device receives command signals through the same input/output terminals that receive address signals and write data signals and transmit read data signals. The input/output terminals are connected to a multiplexer, which is responsive to a received mode control signal to couple the input/output terminals to either a command bus or an input/output bus. A latch in the memory device latches the command signals when the mode control signal causes the input/output terminals to be coupled to the input/output bus. As a result, the command signals continue to be applied to the command bus. When the mode control signal causes the input/output terminals to be coupled to the input/output bus, write data signals are clocked into the memory device and read data signals are clocked out of the memory device responsive to a received clock signal.

Abstract: A semiconductor device includes a plurality of semiconductor memories, a clock signal synchronization circuit, and a first circuit. The clock signal synchronization circuit is electrically coupled to the plurality of semiconductor memories. The first circuit is electrically coupled to the plurality of semiconductor memories. The first circuit changes a bit width of data. The data is transferred between the first circuit and the plurality of semiconductor memories.

Abstract: The data access apparatus comprises a phase locked loop (PLL) and a data receiving circuit. The PLL provides a plurality of internal clocks and selecting a strobe clock from the plurality of internal clocks according to a phase selection signal. The data receiving circuit comprises a latching module, for latching of the data signal according to trigger of the strobe clock and a calibrating circuit, for generating the phase selection signal for matching the data with a predetermined data according to the plurality of internal clocks in a training mode and finally determining the phase selection signal corresponding to a preferred clock used in a normal mode.

Abstract: A semiconductor device includes a bidirectional first bus arranged in common for a plurality of memory array basic units transferring write data and read data, a second bus transferring address/command, a plurality of first buffer circuits receiving addresses/command transferred to the second bus, wherein a control delay for generating the address/command and preparing write data to the first bus for write access and an output delay for outputting read data are both set to a length greater than or equal to a selection time for writing or reading of data to a memory cell of a selected area.

Abstract: Disclosed herein is a device that comprises a SRAM cell, a pair of bit-lines coupled with the SRAM cell, a writing circuit producing at first and second output nodes thereof true and complementary data signals responsive to data to be written, a first pass transistor coupled between one of the pair of the bit-lines and the first output node of the writing circuit, a second pass transistor coupled between the other of the pair of bit lines and the second output node of the writing circuit; and a mask-write circuit configured to render both of the first and second pass transistors conductive in a write operation and render selected one or ones of first and second pass transistors non-conductive in a write-mask operation.

Abstract: A semiconductor memory device includes a security controller. When a one time programmable (OTP) device is programmed, the semiconductor memory device prohibits lock-status information pre-stored in an OTP lock register from being changed to an unlock status, such that it increases the stability of data stored in an OTP area. The semiconductor memory device includes an OTP device configured to determine whether or not data is changed according to a lock/unlock status when a program command is received, and an OTP controller configured to prohibit the lock status from being changed to the unlock status.

Abstract: A memory cell array is configured to have a plurality of memory cells arranged in a matrix, each of the memory cells being connected to a word line and a bit line and being capable of storing n values (n is a natural number equal to or larger than 3). A control circuit controls the potentials of the word line and bit line according to input data and writes data into a memory cell. The control circuit writes data into the memory cell to a k-valued threshold voltage (k<=n) in a write operation, precharges the bit line once, and then changes the potential of the word line an i number of times to verify whether the memory cell has reached an i-valued (i<=k) threshold voltage.

Abstract: According to one embodiment, a transfer circuit includes a first inverter, a second inverter, a first line, a second line, a first holder, and a second holder. The first inverter inverts data at a first node and transfers the inverted data to a second node. The second inverter inverts the data at the second node and transfers the inverted data to the first node. The first line connected to the first node. The second line connected to the second node. The first holder may output data to the first node. The second holder may output data to the second node. When the first holder outputs the data to the first line, the first and second inverters are turned off. When the second holder outputs the data to the first line through the second node, the first inverter is turned off.

Abstract: A burst read control circuit acts as an interface to allow a burst-read capable device to execute burst reads from a page-mode capable memory device. The burst read control circuit coordinates burst read requests from the burst-read capable device and subsequent responses from the page-mode capable memory device by accessing subsequent and contiguous memory locations of the page-mode capable memory device.

Abstract: An input-output line sense amplifier configured to drive input data signals over an input-output signal line to an output driver circuit, the input-output line sense amplifier having an output driver stage having a plurality of different programmable output drive capacities to tailor the output drive of the sense amplifier.

Abstract: Integrated circuits may include memory elements that are provided with voltage overstress protection. One suitable arrangement of a memory cell may include a latch with two cross-coupled inverters. Each of the two cross-coupled inverters may be coupled between first and second power supply lines and may include a transistor with a gate that is connected to a separate power supply line. Another suitable memory cell arrangement may include three cross-coupled circuits. Two of the three circuits may be powered by a first positive power supply line, while the remaining circuit may be powered by a second positive power supply line. These memory cells may be used to provide an elevated positive static control signal and a lowered ground static control signal to a corresponding pass gate. These memory cells may include access transistors and read buffer circuits that are used during read/write operations.

Abstract: A memory controller has a communication path which is coupled to an external, wired electrical path. The memory controller includes at least two alternative interface circuits to communicate with the external, wired electrical path using signals having one of two different formats. Each of the alternative interface circuits is electrically coupled to a corresponding signal connector, and only one of these signal connectors, in turn, is electrically coupled to the external path via an I/O pin or printed-circuit board connection (depending upon implementation). The remaining signal connector may be left electrically uncoupled from the external, wired electrical path, and, if desired, the corresponding remaining interface circuit may be left unused during operation of the memory controller.

Abstract: A non-volatile memory device includes: first and second planes each comprising a plurality of non-volatile memory cells; first and second buffer corresponding to the first and second planes, respectively; an input/output control unit configured to selectively control input/output paths of data stored in the first and second page buffers; a flash interface connected to the input/output control unit; and a host connected to the flash interface.

Abstract: To include a power-down control circuit that suspends an operation of a predetermined internal circuit in response to a power-down command, and an external terminal to which a selection signal is input from outside simultaneously with issuance of a power-down command. The power-down control circuit suspends an operation of a DLL circuit when the selection signal is at a low level, and continues an operation of the DLL circuit when the selection signal is at a high level. According to the present invention, by using the selection signal input simultaneously with a power-down command, mode selection can be made on-the-fly.

Abstract: According to one embodiment, in a nonvolatile semiconductor memory device, a data latch circuit which is connected to a sense amplifier circuit controls a data writing operation and a data reading operation to and from a nonvolatile memory cell array through a data bus, and outputs the stored data to the data bus when the sense amplifier circuit performs the data writing operation. The data latch circuit is provided with two nodes respectively storing and outputting normal data and reverse data which are connected to the data bus.

Abstract: An integrated circuit can include an input/output (I/O) bank. The I/O bank can include a plurality of byte clock groups. Each byte clock group can include at least one phaser configured to clock circuit elements of the byte clock group at a frequency at which a source synchronous device coupled to the byte clock group communicates data.

Abstract: A synchronous data processing system includes a memory module to store data and a memory controller coupled to the memory module. The memory controller includes a clock inverter to receive an input clock signal and to transmit an inverted clock signal to the memory module. The inverted clock signal incurs a first propagation delay prior to reaching the memory module as a memory clock signal. A write data buffer is coupled to the memory module. The write data buffer transmits data to the memory module in response to the input clock signal. An asynchronous first-in-first-out (ASYNC FIFO) buffer is coupled to the memory module. The ASYNC FIFO buffer reads data from the memory module in response to a feedback signal generated by feeding back the memory clock signal to the ASYNC FIFO buffer.

Abstract: A flash storage device comprises: a memory module, for storing data; a control unit, electrically connected to the memory module, for accessing the data in the memory module; and a detecting unit, electrically connected to the control unit, for passing a temperature detecting result to the control unit, and the control unit determining whether a data protection operation is activated according to the temperature detecting result.

Abstract: A circuit includes a reference data line configured to receive a reference voltage value, a memory cell, a data line coupled to the memory cell and configured to have a data logic value associated with data stored in the memory cell, a first circuit coupled to the reference data line and to the data line, and an output node configured to selectively receive the data logic value from the data line or receive the data logic value through the first circuit, based on the reference voltage value and a trip point used to trigger the first circuit to provide the data logic value through the first circuit.

Abstract: Various embodiments include apparatus, systems, and methods having multiple dice arranged in a stack in which a defective cell may be replaced by a spare cell on the same die or a different die. Other embodiments are described.

Abstract: A static random access memory (SRAM) includes a data line for transferring data to and from the memory and at least one reset line, a plurality of storage cells, each cell including an asymmetric feedback loop; an access device for selectively providing a connection between the at data line and the cell's first access node; a reset device for selectively providing a connection between a reset line and the cell's second access node. The SRAM further includes data access control circuitry for generating control signals for independently controlling the access device and the reset device and to generate a data access control signal. The SRAM also generates a reset control signal to trigger the reset device to provide the connection between the at least one reset line and the second access node in response to a write request to write the complementary predetermined value to the storage cell.

Abstract: A Random Access Memory (RAM) and method of using the same are disclosed. The RAM includes a plurality of memory cells arranged in columns and in rows with each memory cell coupled to at least one word line and at least one bit line. The RAM includes a plurality of switches with at least one of the switches coupled between two of the memory cells to allow data to be copied from one of the two memory cells to the other of the two memory cells. In another aspect, the two memory cells can be considered a dual bit cell that contains a copying mechanism. There are two interleaved memory planes, assembled from bit cells that contain two bits of information. One bit is the primary bit that corresponds to the normal RAM bit. The second bit is able to receive a copy and hold the primary value. When the copying mechanism is over, the two memory planes may act as two completely independent structures.

Abstract: A data transfer circuit includes a first driver configured to drive a first line with data, a pattern alteration unit configured to change a pattern of the data transferred through the first line and produce a pattern-changed data, a second driver configured to drive a second line with the pattern-changed data; and a pattern restoration unit configured to receive the pattern-changed data transferred through the second line and restore the pattern of the data before the pattern change.

Abstract: A semiconductor memory apparatus includes a first data input/output line configured to transmit data from a first memory bank; a second data input/output line configured to transmit the data from the first memory bank; a first data output section configured to align and output data transmitted through the first data input/output line based on an input/output mode; and a second data output section configured to align and output either data transmitted through the first input/output line or the second data input/output line based on the input/output mode and an address signal.

Abstract: A semiconductor memory device includes a first memory cell array having a first plane which is composed of a plurality of blocks each having a plurality of memory cells, a sense circuit which reads data the memory cells, a sequencer which receives control signals from outside, a first address register, and a second address register which receives an output address from the first address register and outputs an address signal in response to an address control signal from the sequencer. In reading from the memory cells, the sequencer reads a page n in accordance with the address stored in the second address register, then transfers an address stored in the first address register to the second address register concurrently with outputting data read from the page n to outside and reads data from an arbitrary page m in accordance with the address transferred to the second address register.

Abstract: The present invention discloses a multi-chip module with master-slave analog signal transmission function. The multi-chip module comprises: a master chip having a first setting input pin for receiving an analog setting signal to generate an analog setting in the master chip, and the master chip duplicating the analog setting to output a first analog output; and a first slave chip for receiving the first analog output from the master chip to generate an internal setting of the first slave chip.

Abstract: Various embodiments include apparatus, systems, and methods having multiple dice arranged in a stack in which a defective cell may be replaced by a spare cell on the same die or a different die. Other embodiments are described.

Abstract: A memory array includes: at least one differential local bit line pair; at least one differential global bit line pair; at least a column selection signal, for charging the differential local bit line pair to a predetermined voltage; at least an enable signal for coupling the differential local bit line pair to the differential global bit line pair when a voltage of the differential local bit line pair reaches a specific value; and a local sense accelerator, coupled to the differential local bit line pair, for determining a voltage of the differential local bit line pair, and enabling an accelerator signal for latching one of the differential local bit line pair and pulling the other low when the voltage reaches the specific value.

Abstract: According to one embodiment, a differential circuit receives, as differential inputs, a readout signal read out from a semiconductor storage element and a reference voltage. An equalizing circuit controls, taking into account a state of a past input signal output from the differential circuit, the potential of the present differential signal output from the differential circuit. A sense amplifier detects a state of the differential signal output from the equalizing circuit. A state holding circuit holds a past state of the differential signal detected by the sense amplifier and supplies the state to the equalizing circuit.

Abstract: A semiconductor device including a plurality of memory cells arranged in a matrix pattern, a write amplifier which writes write data to the memory cell in synchronization with a clock, a sense amplifier which reads out the write data written in the memory cell in synchronization with the clock, a plurality of column select switches which connect the plurality of the memory cells with the sense amplifier and the write amplifier, a column address decoder which makes the column select switch corresponding to one column among the plurality of the memory cells a conductive state based on a column address, a row address decoder which activates the memory cell of one row based on a row address, and a test write circuit which writes data corresponding to a logical level of a test signal to the memory cell based on a test mode signal.

Abstract: A semiconductor memory device includes a memory cell array divided into a plurality of subarrays arranged in matrix form, the plurality of subarrays making up a plurality of subarray columns, an address pad column formed outside the memory cell array, the address pad column comprising a plurality of address pads that are arranged to be substantially parallel to the subarray columns, a data I/O pad column formed in a middle section of the memory cell array, the data I/O pad column comprising data I/O pads that are arranged to be substantially parallel to the subarray columns, an address input circuit arranged in the middle section of the memory cell array, and a pad input address line formed in a direction substantially perpendicular to the subarray columns on the memory cell array, the pad input address line directly connecting the address pad and the address input circuit.

Abstract: A controller uses N dedicated ports to receive N signals from N non-volatile memories independent of each other, and uses a bus in a time shared manner to transfer data to and from the N non-volatile memories. The controller receives from a processor, multiple operations to perform data transfers, and stores the operations along with a valid bit set active by the processor. When a signal from a non-volatile memory is active indicating its readiness and when a corresponding operation has a valid bit active, the controller starts performance of the operation. When the readiness signal becomes inactive, the controller internally suspends the operation and starts performing another operation on another non-volatile memory whose readiness signal is active and for which an operation is valid. A suspended operation may be resumed any time after the corresponding readiness signal becomes active and on operation completion the valid bit is set inactive.

Abstract: A semiconductor memory device includes a first plane and a second plane each configured to include a plurality of memory cells, and a data transfer circuit configured to transfer first data, stored in the memory cells of the first plane, to the second plane and transfer second data, stored in the memory cells of the second plane, to the first plane when a copyback operation is performed and to transfer the first data or the second data to an I/O circuit when a read operation is performed.

Abstract: A semiconductor device comprises a plurality of terminals, a plurality of drive units corresponding to the plurality of terminals, and a data control unit. The data control unit outputs parallel data applied to the plurality of terminals to the plurality of drive unit in a normal operation mode, and converts serial data applied to a particular terminal, which is one of the plurality of terminals, to parallel data, and outputs the parallel data to which the serial data applied to the particular terminal is converted to the plurality of drive units in a test mode.

Abstract: Consistent with the present disclosure, a plurality of FIFO buffers, for example, are provided in a switch, which also includes a switch fabric. Each of the plurality of FIFOs is pre-filled with data for a duration based on a skew or time difference between the time that a data unit group is supplied to its corresponding FIFO and a reference time. The reference time is the time, for example, after a delay period has lapsed following the leading edge of a synch signal, the timing of which is a known system parameter and is used to trigger switching in the switch fabric. Typically, the delay period may be equal to the latency (often, another known system parameter) or length of time required for the data unit to propagate from an input circuit, such as a line card of the switch or another switch, to the FIFO that receives the data unit. At the reference time, temporally aligned data unit groups may be read or output from each FIFO and supplied to the switch fabric.

Abstract: A semiconductor memory device includes: a data transferrer configured to transfer data; a main driver configured to apply the data to the data transferrer in response to a control signal; and a pre-driver configured to decrease a voltage level of the data transferrer when the voltage level of the data transferrer is higher than a logic threshold voltage, and to increase the voltage level of the data transferrer when the voltage level of the data transferrer is lower than the logic threshold voltage prior to activation of the control signal.

Abstract: Disclosed is a semiconductor device including: a first switch controlling connection between a first data line pair a second data line pair; a first amplifier connected to the first data line pair; a second switch controlling the connection between the second data line pair and a third data line pair; a second amplifier amplifying data on the second data line pair and delivering the amplified data to the third data line pair; a third amplifier connected to the third data line pair; and a switch control circuit controlling the second switch. Based upon a first control signal that controls precharging and equalization of the first data line pair, the switch control circuit renders the second switch conductive when precharging and equalization of the first data line pair is not carried out, and renders the second switch non-conductive when precharging and equalization of the first data line pair is carried out.