Abstract: A non-volatile semiconductor memory device includes a cell array including a plurality of memory cells arranged in a plurality of rows and columns. A page buffer circuit includes a plurality of page buffers corresponding to the plurality of columns, respectively, each page buffer including a first register that is configured to store programming data for a page memory cells and a second register that is configured to store contents of the first register and outside input data. A pass/fail check circuit is configured to generate a programming verification result for the pages of memory cells responsive to the contents of the first registers. A pass/fail check latch circuit is configured to store the programming verification result.

Abstract: Data read from memory cells of one page in a memory cell array that corresponds to a page address of a copy source is sensed and latched by a sense/latch circuit. The sense/latch circuit has a plurality of latch circuits, and the plurality of latch circuits is specified according to the column address. The latch circuit specified in accordance with the column address is supplied with the data to be rewritten. The latch circuit specified in accordance with its address latches the data to be rewritten, whereby rewriting of the data is performed. The data of one page after rewritten is written into the page in the memory cell array that corresponds to the page address of a copy destination.

Abstract: Source line bias is an error introduced by a non-zero resistance in the ground loop of the read/write circuits. During sensing the source of a memory cell is erroneously biased by a voltage drop across the resistance and results in errors in the applied control gate and drain voltages. This error is minimized when the applied control gate and drain voltages have their reference point located as close as possible to the sources of the memory cells. In one preferred embodiment, the reference point is located at a node where the source control signal is applied. When a memory array is organized in pages of memory cells that are sensed in parallel, with the sources in each page coupled to a page source line, the reference point is selected to be at the page source line of a selected page via a multiplexor.

Abstract: A semiconductor memory device is arranged so that its circuit area is made smaller and the stored data may be constantly outputted at fast speed. The semiconductor memory device includes a memory cell array and an auxiliary cell array concatenated with word lines on the increasing side of bit-line addresses in the memory cell array. The auxiliary cell array stores data of memory cells in the range from a first bit-line address on a next word-line address to a bit-line address located apart by a predetermined number of bits. A Y-address driver is also included in the semiconductor memory device. The Y-address driver reads data from the auxiliary cell array following the last bit-line address if the read of data pieces at a time ranges from the last bit-line address to the first bit-line address on the next word-line address in the memory cell array.

Abstract: The number of fusible links and other circuit components required to provide memory cell redundancy are reduced by sharing physical memory locations among address banks that store memory addresses. Non-trial and error algorithms and techniques determine the number of addresses and the number of identical least significant bit (LSB) values that can share the same physical memory location. By sharing physical locations for identical LSB values, circuit hardware on a memory device (including fusible links and compare circuitry) is reduced. Thus, less die area is needed to provide the same degree of redundancy.

Abstract: The number of fusible links and other circuit components required to provide memory cell redundancy are reduced by sharing physical memory locations among address banks that store memory addresses. Non-trial and error algorithms and techniques determine the number of addresses and the number of identical least significant bit (LSB) values that can share the same physical memory location. By sharing physical locations for identical LSB values, circuit hardware on a memory device (including fusible links and compare circuitry) is reduced. Thus, less die area is needed to provide the same degree of redundancy.

Abstract: The number of fusible links and other circuit components required to provide memory cell redundancy are reduced by sharing physical memory locations among address banks that store memory addresses. Non-trial and error algorithms and techniques determine the number of addresses and the number of identical least significant bit (LSB) values that can share the same physical memory location. By sharing physical locations for identical LSB values, circuit hardware on a memory device (including fusible links and compare circuitry) is reduced. Thus, less die area is needed to provide the same degree of redundancy.

Abstract: A flash memory device includes a memory cell array arranged in rows and columns; a pad configured to be supplied with a high voltage from the exterior during a stress test operation; a column decoder configured to select a part of the columns in response to column selection signals; and a column predecoder configured to generate the column selection signals in response to an all column selection signal and a column address. The column predecoder simultaneously drives the column selection signals with the high voltage from the pad when the all column selection signal is activated during the stress test operation.

Abstract: Conductive memory array having page mode and burst mode write capability. The conductive memory array includes two-terminal memory plugs and driver circuits configured to write information to the memory plugs in two cycles. The array also includes associated circuitry that allows it to carry out such two-cycle writes in either page mode or burst mode.

Abstract: Memory device is described that utilizes a reduced number of sense amplifiers to sense the data bits of a selected column page. The sense amplifiers are multiplexed and the read data values latched, allowing the sense amplifiers to sense the next set of data lines from the selected column page before the currently latched values have been read out. A specialized decoder and a latch control circuit allows there to be no gaps or latencies while reading data from the memory due to reloading the read latches or in multiplexing the sense amplifiers. The design allows there to be no gaps or latencies while reading data from the memory due to reloading the read latches or multiplexing the sense amplifiers to sense a following set of data bit lines.

Abstract: A data storage device includes one or more non-volatile, blockwise erasable data storage media and a mechanism for sanitizing the media in response to a single external stimulus or in response to a predetermined physical or logical condition. Optionally, only part of the media is sanitized, at a granularity finer than the blocks of the medium. Setting a flag in an auxiliary nonvolatile memory enables an interrupted sanitize to be detected and restarted. Optionally, a “death certificate” verifying the sanitizing is issued. Preferably, the media are configured in a manner that allows atomic operations of the sanitizing to be effected in parallel.

Abstract: In a flash EEPROM system that is divided into separately erasable blocks of memory cells with multiple pages of user data being stored in each block, a count of the number of erase cycles that each block has endured is stored in one location within the block, such as in spare cells of only one page or distributed among header regions of multiple pages. The page or pages containing the block cycle count are initially read from each block that is being erased, the cycle count temporarily stored, the block erased and an updated cycle count is then written back into the block location. User data is then programmed into individual pages of the block as necessary. The user data is preferably stored in more than two states per memory cell storage element, in which case the cycle count can be stored in binary in a manner to speed up the erase process and reduce disturbing effects on the erased state that writing the updated cycle count can cause.

Abstract: With the objective of providing a semiconductor memory device which is made identical in usability to a static RAM by use of dynamic memory cells and realizes a high-speed memory cycle time, there is provided a pseudo static RAM having a time multiplex mode which, when instructions for a memory operation for reading memory information from each of memory cells each requiring a refresh operation for periodically holding the memory information, or writing the same therein is issued, carries out an addressing-based autonomous refresh operation different from the memory operation before or after the memory operation. The pseudo static RAM includes address signal transition detectors for a row and a column, and a page mode which independently performs a column address selecting operation according to an address signal transition detect signal of the second address signal transition detector.

Abstract: Method and apparatus for use with flash memory devices and systems are included among the embodiments. In exemplary systems, a pipelined burst read operation allows the device to support higher data transfer rates than are possible with prior art burst read flash memory devices. Preferably, the flash memory device supports both non-pipelined and pipelined read operations, with the read mode settable from a memory controller. Other embodiments are described and claimed.

Abstract: An integrated circuit memory device is designed to perform high speed data write cycles. An address strobe signal is used to latch a first address. During a burst access cycle the address is incremented internal to the device with additional address strobe transitions. A new memory address is only required at the beginning of each burst access. Read/Write commands are issued once per burst access eliminating the need to toggle the Read/Write control line at the device cycle frequency. A transition of the Read/Write control line during a burst access is used to terminate the burst access and initialize the device for another burst access. Write cycle times are maximized to allow for increases in burst mode operating frequencies. Local logic gates near array sense amplifiers are used to control write data drivers to provide for maximum write times without crossing current during input/output line equilibration periods.

Abstract: Techniques for quickly and reliably accessing a memory device (e.g., a NAND Flash memory) with adaptive interface timing are described. For memory access with adaptive interface timing, the NAND Flash memory is accessed at an initial memory access rate, which may be the rate predicted to achieve reliable memory access. Error correction coding (ECC), which is often employed for NAND Flash memory, is then used to ensure reliable access of the NAND Flash. For a read operation, one page of data is read at a time from the NAND Flash memory, and the ECC determines whether the page read from the NAND Flash memory contains any errors. If errors are encountered, then a slower memory access rate is selected, and the page with error is read again from the NAND Flash memory at the new rate. The techniques may be used to write data to the NAND Flash memory.

Abstract: A nonvolatile ferroelectric memory immediately outputs data stored in a page buffer without performing a cell access operation when a page buffer is accessed. Since a block page address region and a column page address region are arranged in less significant bit region, and a row address region is arranged in more significant bit region, the cell operation is not performed in the access of the page address buffer, thereby improving reliability of the cell and reducing power consumption.

Abstract: The present invention provides a non-synchronous semiconductor memory device configured as a pseudo-SRAM and capable of relaxing the limitation to address skew and improving the read rate. A data latch circuit 110 holds data having been read out of memory cells in a memory cell array 106 designated by a tow address included in an address ADD in a read mode. Upon transitions of column addresses A0, A1 included in the address, a multiplexer 111 sequentially and non-synchronously feeds out the data held in the data latch circuit 110 based on the column addresses A0, A1.

Abstract: An apparatus for address selection including a first storage element and a second storage element coupled to an input bus. The first storage element stores a first address segment and the second storage element stores a second address segment upon the receipt of respective complementary clock signals. An internal address bus propagates the address segments together.

Abstract: A sorting circuit (140) transfers data between a first group of at least four lines (134) on which the data items are arranged based on their addresses, and a second group of lines (138, WD0R, WD0F, WD1R, WD1F) on which the data items are arranged based on the order in which they are read or written in a burst operation. Six signals (SORT) and their complements are sufficient to control the sorting circuit for both the read and the write operations, and provide both the DDR and the DDR2 functionality.

Abstract: A data storage device includes one or more non-volatile, blockwise erasable data storage media and a mechanism for sanitizing the media in response to a single external stimulus or in response to a predetermined physical or logical condition. Optionally, only part of the media is sanitized, at a granularity finer than the blocks of the medium. Setting a flag in an auxiliary nonvolatile memory enables an interrupted sanitize to be detected and restarted. Optionally, a “death certificate” verifying the sanitizing is issued. Preferably, the media are configured in a manner that allows atomic operations of the sanitizing to be effected in parallel.

Abstract: A semiconductor memory device having a data latch circuit has plural bit lines to which a reprogrammable memory cell is connected, a data bus on which data is transferred, a latch circuit latching the data transferred on the data bus, a read out circuit connected to the data bus, and a data transfer circuit group to directly transfer the data latched in the latch circuit to the read out circuit without transferring it to the memory cell.

Abstract: A synchronous flash memory has been described that includes an array of non-volatile memory cells. The memory device has a package configuration that is compatible with an SDRAM. The synchronous flash memory device includes an array of non-volatile memory cells arranged in a plurality of rows and columns. During a read operation, a row of the memory array can be accessed and data read from a group of columns during a burst operation. The burst columns are generated using an internal counter and an externally provided start address. The memory generates the burst column addresses by modifying the least significant column address signals only. For a burst length of two, only the least significant address bit is modified. For a burst length of four, only the two least significant address bits are modified. Finally, only the three least significant address bits are modified for a burst length of two. In one embodiment, the burst addresses rotate through the defined column group in a cyclical manner.

Abstract: The present invention relates to a composite memory device comprising first through third memory devices, a memory bus, and first through third memory controllers. The first memory device is an asynchronous memory device, the second memory device is a synchronous memory device configured to operate in a page mode, and the third memory device is a synchronous memory device configured to operate in a burst mode. The first through the third memory controllers are configured to control data transfer operation between the memory bus and the first through the third memory devices, respectively. The first through the third memory devices are controlled by an external memory controller to exchange data with an external system bus, and when one of the first through the third memory devices exchanges data with the external system bus, the rest two memory devices are allowed to exchange data via the memory bus.

Abstract: A method for operating a memory cell array, the method comprising assigning word lines of a memory cell array as addresses for writing sets of data thereto from a cache memory, and scrambling addresses of the sets of data by writing a first chunk of the particular set of data from the cache memory to a first word line of the array, and writing a second chunk of the particular set of data from the cache memory to a second word line of the array, the first chunk comprising a first subset of the particular set of data and the second chunk comprising a second subset of the particular set of data.

Abstract: A nonvolatile ferroelectric memory device features a wide page buffering function. The nonvolatile ferroelectric memory device comprises a single cell array block, a word line driving unit, a plate line driving unit, a wide page buffer unit and a column selecting unit. All cell arrays in the memory device are included in a single cell array block. In a read mode, the wide page buffer unit simultaneously senses and buffers voltages of all main bit lines in the single cell array block and outputs the buffered data to a data buffer unit by a predetermined data width unit. In a write mode, the wide page buffer unit receives write data in a predetermined data width, buffers the write data until the write data corresponding to the all main bit lines are applied, and simultaneously writes the buffered data in the cells. As a result, the cell efficiency is increased, and the data processing speed is improved.

Abstract: A memory device includes 4 memory banks each of which includes first and second arrays of memory cells. A mode register is programmed with a bit that selects a high-power, large-page operating mode or a low-power, small-page operating mode. In the high-power mode, a row decoder is coupled to the row lines in both the first and second arrays. In the low-power mode, the row decoder is coupled to the row lines in only one of the arrays as determined by the state of an array select signal. The array select signal corresponds to the most significant bit of the column address, but it is applied to the memory device at the time the row address is applied to the memory device. Sense amplifiers coupled to the first and second arrays may also be selectively enabled when the row lines for the corresponding array are coupled to the row decoder.

Abstract: A decoding structure for a memory device with a control code is used in a memory including a matrix of memory cells grouped into pages to each of which a block of control information is associated, and a plurality of reading elements for reading a plurality of pages in parallel. The decoding structure selectively connects each reading element to a plurality of memory cells, and selectively connects each memory cell to a plurality of reading elements.

Abstract: An SDRAM access control section activates a row of an SDRAM when a request is made to access the row in the continuous access mode. The SDRAM access control section outputs a read command or a write command to the SDRAM 300 when a request is made to access the SDRAM 300, without deactivating the accessed row, until a detection signal that detects the last column is asserted. The SDRAM access control section deactivates the accessed row when the detection signal is asserted.

Abstract: In a flash EEPROM system that is divided into separately erasable blocks of memory cells with multiple pages of user data being stored in each block, a count of the number of erase cycles that each block has endured is stored in one location within the block, such as in spare cells of only one page or distributed among header regions of multiple pages. The page or pages containing the block cycle count are initially read from each block that is being erased, the cycle count temporarily stored, the block erased and an updated cycle count is then written back into the block location. User data is then programmed into individual pages of the block as necessary. The user data is preferably stored in more than two states per memory cell storage element, in which case the cycle count can be stored in binary in a manner to speed up the erase process and reduce disturbing effects on the erased state that writing the updated cycle count can cause.

Abstract: The Disclosed is a method of reading a memory device in a page mode. The method includes the steps of inputting a row address for selecting the word line, enabling a corresponding word line by the row address, and reading/restoring the level of the cell node connected to the enabled word line, and disabling the enabled word line and sequentially enabling bit line sense amplifiers connected to the disabled word line to perform a read operation, wherein the disabling of the selected word line is performed after a lapse of a certain time period as much as data of a first cell node can be restored. Therefore, it is possible to reduce current consumption in a read operation of a page mode.

Abstract: In an information processing device, a first address adder generates a first address representing a target for write of data or a storage location of data to be read. A second address adder generates a second address by adding 8 to the first address. First to seventh selectors appropriately select either the first address or the second address, and supply the selected address to first to seventh memory areas, respectively. An eighth memory area is supplied with the first address.

Abstract: With the objective of providing a semiconductor memory device which is made identical in usability to a static RAM by use of dynamic memory cells and realizes a high-speed memory cycle time, there is provided a pseudo static RAM having a time multiplex mode which, when instructions for a memory operation for reading memory in formation from each of memory cells each requiring a refresh operation for periodically holding the memory information, or writing the same therein is issued, carries out an addressing-based autonomous refresh operation different from the memory operation before or after the memory operation. The pseudo static RAM includes address signal transition detectors for a row and a column, and a page mode which independently performs a column address selecting operation according to an address signal transition detect signal of the second address signal transition detector.

Abstract: In a semiconductor memory incorporating therein a circuit for relieving a defective memory cell, a memory cell array constituted of a number of main memory cells MC00 to MCij is added with one column of redundant memory cells MC0j+1 to MCij+1 and one word line of substitution information storing memory cells MCRA0 to MCRAj+1. In only a first cycle after the power supply is turned on, the substitution information DR0 to DRj is read out from the substitution information storing memory cells by use of a writing/reading circuit associated with the main memory cells, and is transferred to and held in a control circuit. In a second and succeeding cycles, the control circuit generates Y selection circuit control signals CS0 to CSj on the basis of the substitution information held in the control circuit, and a Y selection circuit is controlled by the control signals CS0 to CSj so as to selectively connect the columns other than a defective column to an input/output line.

Abstract: A semiconductor memory device having an architecture that allows a user to change a page length of the semiconductor device. Circuits and methods for changing a page length of a semiconductor device enable selective activation of one or more corresponding wordlines (having the same row address) of memory cell array blocks of a memory cell array to thereby change the page length according to a specified operational mode.

Abstract: A method for quickly detecting the state of a nonvolatile storage medium having a plurality of blocks therein is proposed. When the system stores data in any page of a blank block, the first page thereof is simultaneously marked. When there already is data in a block to be written in, because the first page of the block is already marked, it is not necessary to mark again. Therefore, it is only necessary to directly read the first page in each block when searching the block states in the nonvolatile storage medium. The state of the nonvolatile storage medium can be quickly detected based on the existence of a mark, hence effectively enhancing the performance of data access.

Abstract: An integrated circuit memory includes a FLASH memory including a circuit for recording a word presented on its input without the possibility of recording simultaneously several words in parallel. The integrated circuit memory may include a buffer memory with a sufficient capacity to store a plurality of words, the output of which is coupled to the input of the FLASH memory. A circuit is also included for recording into the buffer memory a series of words to be recorded into the FLASH memory and recording into the FLASH memory the words first recorded into the buffer memory.

Abstract: A single flash memory device has selectable read modes for either a segment mode or a page mode. The desired mode is selected by writing a control word to a mode control register. Selecting the segment mode causes the device to output selected memory segments. Selecting the page mode causes the device to output selected memory pages.

Abstract: The present invention provides a semiconductor memory cell repairing apparatus and method that can effectively repair memory cells although a various type of failures in memory cells are generated when a rule in the failure is detected. There is provided a memory cell repairing apparatus includes state fixing parts operable to fix a specific external input address signal out of external input addresses as a constant state, address input receivers operable to receive output signals of the state selecting part and external input signals, address code selecting part operable to receive output address signals of the address input receiver and to convert output address signal path through a control signal which selects address code change to output a changed address signal, and address input buffers operable to receive the changed address signal outputted from the address code selecting part to output a new internal address.

Abstract: A semiconductor memory device having a data latch circuit has plural bit lines to which a reprogrammable memory cell is connected, a data bus on which data is transferred, a latch circuit latching the data transferred on the data bus, a read out circuit connected to the data bus, and a data transfer circuit group to directly transfer the data latched in the latch circuit to the read out circuit without transferring it to the memory cell.

Abstract: A semiconductor memory device having a partial activation framework, which provides an efficient page mode operation while operating in a partial activation mode. Control circuits and methods are provided to enable a page mode operation (for read and write data accesses) in a semiconductor memory device (such as a DRAM, FCRAM) having a partial activation framework, resulting in an improved data access speed when data is written/read from memory locations having the same wordline address.

Abstract: In a semiconductor memory incorporating therein a circuit for relieving a defective memory cell, a memory cell array constituted of a number of main memory cells MC00 to MCij is added with one column of redundant memory cells MC0j+1 to MCij+1 and one word line of substitution information storing memory cells MCRA0 to MCRAj+1. In only a first cycle after the power supply is turned on, the substitution information DR0 to DRj is read out from the substitution information storing memory cells by use of a writing/reading circuit associated with the main memory cells, and is transferred to and held in a control circuit. In a second and succeeding cycles, the control circuit generates Y selection circuit control signals CS0 to CSj on the basis of the substitution information held in the control circuit, and a Y selection circuit is controlled by the control signals CS0 to CSj so as to selectively connect the columns other than a defective column to an input/output line.

Abstract: The invention relates to two methods for reading and two methods for storing data, and also to an apparatus for compressing data and decompressing data which are provided for storage by a computer system 51 on a bulk memory 60 of the random access type, which computer system provides the data for storage on a bulk memory on the basis of the rules of a file system, where the data are organized in data blocks, where the data blocks contain organization information for managing the data blocks and contain the user information which is to be stored, where cohesive user information areas can be distributed over a plurality of data blocks which are then concatenated to one another using their organization information.

Abstract: The disclosure is a NAND flash memory including a data loading circuit providing a program data bit into a page buffer having first and second latches. During a data loading operation for programming, the data loading circuit puts a pass data bit into a page buffer corresponding to a defective column, instead of a program data bit that is assigned to the defective column, responding to information of a column address involved in the defective column. It is available to provide a pass/fail check circuit for program-verifying without employing a fuse arrangement, making data of the defective column not affect a program-verifying result.

Abstract: Program code for a Processor is stored in a non-volatile memory (for example, flash memory). An individual data bit stored in a memory cell of the non-volatile memory can be changed from an unprogrammed state to a programmed state using a write cycle. An individual bit stored in the memory cannot, however, be changed from the programmed state back to the unprogrammed state without performing an erase cycle on all the bits of a page of memory cells. The processor has an instruction set that includes a multi-bit breakpoint instruction, all the bits of which are the programmed state. Because all the bits of the breakpoint instruction are the programmed state of the memory, the breakpoint instruction can be written over any other instruction that is stored in the memory without having to perform an erase cycle or erase an entire page of program code.

Abstract: An apparatus comprising a memory device and one or more control circuits. The memory device may be configured to store and retrieve data. The one or more control circuits may be configured to control access to the memory device. Each of the control circuits may be configured to provide a readback of an internal address value when in a first state and a readback of a mask value when in a second state.

Abstract: A memory device is comprised of a plurality of arrays of memory cells and peripheral devices for reading and writing information to the memory cells. The peripheral devices include a decode circuit responsive to a first portion of address information for identifying an address and is further responsive to a second portion of the address information for identifying an order. The address may be a read address or a write address, and the order may be the order for reading data or writing data, respectively. The peripheral devices may also include a read sequencer circuit or both a write sequencer circuit and a read sequencer circuit for reordering bits to be read or written in response to another portion of the address information. Methods of operating such a memory device including outputting or reading a word from a memory array in two prefetch steps or operations are also disclosed.

Abstract: A method for quickly detecting the state of a nonvolatile storage medium having a plurality of blocks therein is proposed. When the system stores data in any page of a blank block, the first page thereof is simultaneously marked. When there already is data in a block to be written in, because the first page of the block is already marked, it is not necessary to mark again. Therefore, it is only necessary to directly read the first page in each block when searching the block states in the nonvolatile storage medium. The state of the nonvolatile storage medium can be quickly detected based on the existence of a mark, hence effectively enhancing the performance of data access.

Abstract: A synchronous flash memory has been described that includes an array of non-volatile memory cells. The memory device has a package configuration that is compatible with an SDRAM. The synchronous flash memory device includes an array of non-volatile memory cells arranged in a plurality of rows and columns. During a read operation, a row of the memory array can be accessed and data read from a group of columns during a burst operation. The burst columns are generated using an internal counter and an externally provided start address. The memory generates the burst column addresses by modifying the least significant column address signals only. For a burst length of two, only the least significant address bit is modified. For a burst length of four, only the two least significant address bits are modified. Finally, only the three least significant address bits are modified for a burst length of two. In one embodiment, the burst addresses rotate through the defined column group in a cyclical manner.

Abstract: The present invention relates to a composite memory device comprising first through third memory devices, a memory bus, and first through third memory controllers. The first memory device is an asynchronous memory device, the second memory device is a synchronous memory device configured to operate in a page mode, and the third memory device is a synchronous memory device configured to operate in a burst mode. The first through the third memory controllers are configured to control data transfer operation between the memory bus and the first through the third memory devices, respectively. The first through the third memory devices are controlled by an external memory controller to exchange data with an external system bus, and when one of the first through the third memory devices exchanges data with the external system bus, the rest two memory devices are allowed to exchange data via the memory bus.