Abstract: A thin film magnetic memory device includes an antenna section transmitting and receiving a radio wave to an from an outside of the thin film magnetic memory device. An inductance wiring constituting the antenna section has a metal wiring, and a magnetic film formed to correspond to a lower surface portion of the metal wiring or lower surface and side surface portions of the metal wiring. The magnetic film is formed in an original manufacturing step of the thin film magnetic memory device without providing a dedicated manufacturing step.

Abstract: An apparatus includes a low magnetic-coercivity layer of material (LMC layer) having a majority electron-spin-polarization (M-ESP), an energy-gap coupled with the LMC layer, wherein a flow of spin-polarized electrons having an electron-spin-polarization anti-parallel to the LMC layer are injected via the energy-gap, to change the M-ESP of the LMC layer. A non-magnetic material is in electrical communication with the LMC layer and provides a spin-balanced source of current to the LMC layer, responsive to the injection of spin-polarized electrons into the LMC layer.

Abstract: The present disclosure relates to an information storage device. The storage device comprises a connector for interfacing the storage device with a host computing device and at least one solid-state memory device contained within the storage device, the memory device holding personal information of a user of the storage device. In a preferred arrangement, the storage device is small in size yet has a large storage capacity such that the user can carry with him or her a large volume of personal information.

Abstract: A magnetic storage cell includes an active layer and a reference layer which is structured to minimize disruptions to magnetization in its active layer. The reference layer is structured so that a pair of its opposing edges overlap a pair of corresponding edges of the active layer. This may be used minimize the effects of demagnetization fields on the active layer. In addition, the reference layer may be thinned at its opposing edges to control the effects of coupling fields on the active layer and balance the demagnetization field.

Abstract: A nonvolatile analog magnetic memory includes a substrate comprised of saturable and desaturable magnetic domains at distinguishable fixed locations, a bi-directional drive circuit to selectively write data to the magnetic domains by first saturating a selected magnetic domain with current flowing in one direction, followed by desaturating the magnetic domain with current flowing in the reverse direction of the saturating current, lowering the magnetic flux density to a level corresponding to the magnitude of an analog input electrical signal within a range of magnetic flux density levels between a zero point and a full scale point, sensors and a sensor select circuit to select a magnetic domain and nondestructively respond to the magnitude of the magnetic flux for the chosen magnetic domain, producing an electrical output signal corresponding to the magnetic flux for the chosen magnetic domain.

Abstract: A random access memory element utilizes giant magnetoresistance. The element includes at least one pair of ferromagnetic layers sandwiching a nonmagnetic conductive layer. At least one of the two ferromagnetic layers has a magnetic moment oriented within its own plane. The magnetic moment of at least the first ferromagnetic layer of the pair has its magnetic moment oriented within its own plane and is typically fixed in direction during use. The second ferromagnetic layer of the pair has a magnetic moment which has at least two preferred directions of orientation. These preferred directions of orientation may or may not reside within the plane of the second ferromagnetic layer. The bit of the memory element may be set by applying to the element a magnetic field which orients the magnetic moment of the second ferromagnetic layer in one or the other of these preferred orientations.

Abstract: This invention provides an integrated, non-volatile, high-speed random access memory. A magnetically switchable ferromagnetic or ferrimagnetic layer is sandwiched between an electrical conductor which provides the ability to magnetize the magnetically switchable layer and a magnetoresistive or Hall effect material which allows sensing the magnetic field which emanates from the magnetization of the magnetically switchable layer. By using this integrated three-layer form, the writing process, which is controlled by the conductor, is separated from the storage medium in the magnetic layer and from the readback process which is controlled by the magnetoresistive layer. A circuit for implementing the memory in CMOS or the like is disclosed.