Abstract: A heat sink has a first flat plate, a partition plate, and a second flat plate. The first flat plate has an upper surface in which a first recess is formed. The second flat plate has a lower surface in which a second recess is formed, and an upper surface on which a semiconductor laser element is mounted. These recesses form a part of a refrigerant channel. The partition plate has a lower surface covering the first recess, an upper surface covering the second recess, and at least one through hole having the first recess communicated with the second recess. The first flat plate and the second flat plate both have a first coefficient of thermal expansion. The partition plate has a second coefficient of thermal expansion lower than the first coefficient of thermal expansion.

Abstract: An optical communication system for performing data transmission with optical signals comprises a first optical transmitter and a first optical receiver. The first optical transmitter has a first surface-emitting laser including an active layer of a multiple quantum well structure having a quantum well layer of InxGa1-xAs (0.15?x?0.35), the first surface-emitting laser having an oscillation wavelength ranging from 1000 nm to 1100 nm inclusive. The first optical transmitter transmits an optical signal generated by the first surface-emitting laser. The first optical receiver is connected to the first optical transmitter by a first optical transfer path, and receives the optical signal transmitted from the first optical transmitter through the first optical transfer path.

Abstract: A laser system includes at least two sources configured to provide at least two spatially separated laser beams, and a mount configured to mount the at least two sources along an arc, the arc defining an angular coordinate and a radial coordinate, wherein an axial coordinate is orthogonal to the angular coordinate and the radial coordinate, and the spatially separated laser beams are separated in the axial coordinate. The mount is further configured to mount the at least two sources providing thereby an offset of the laser beams in the axial coordinate such that the laser beams interleave in the axial direction at a center region of the arc.

Abstract: A light source device includes a plurality of light emission sections disposed in parallel with an interval, wherein the interval for the light emission sections near each end portion in an array of the light emission sections is narrower than the interval near a center portion in the array.

Abstract: A laser arrangement has at least one laser diode apparatus with a side surface which laterally limits the laser diode apparatus. The laser arrangement has a plurality of active regions arranged laterally side by side and configured to generate radiation. The laser diode apparatus is arranged on a mount. The distance between the side surface and an edge which laterally limits the mount on the part of the side surface is shorter than the distance between the side surface and the active region closest to the side surface. Additionally or alternatively, the distance between the side surface and the edge is shorter than one of the distances between two adjacent active regions of the laser diode apparatus.

Abstract: Systems and methods for high brightness, improved phase characteristics laser diodes.

Abstract: A method and device for coherent addition of semiconductor laser emission, in particular for use in telecommunications. Individual emitters are coupled, each emitter to some extent experiencing some of the emission of all the others. Rather than all emitting independently of one another, the emitters are arranged in a common resonator. Using an optimization method, e.g., the simulated annealing method, the shape of the resonator mirror may be optimized until it optimally fulfils a preassigned set of mathematical requirements which constitute a set criterion. The individual emitters in the form of individual diodes, a diode matrix or a diode bar are arranged between two or more mirrors. At least one of these mirrors has a special, non-spherical surface that forms an internal correction element. Alternatively, the mirrors may be spherical-shaped with at least one non-spherical phase plate arranged in the resonator beam path.

Abstract: Various methods and apparatuses are described in which an array of optical gain mediums capable of lasing are contained in a single integral unit. The array may contain four or more optical gain mediums capable of lasing. Each optical gain medium capable of lasing supplies a separate optical signal containing a band of wavelengths different than the other optical gain mediums capable of lasing in the array to a first multiplexer/demultiplexer. A connection for an output fiber exists to route an optical signal to and from a passive optical network.

Abstract: A first semiconductor laser element is formed on a surface of the first substrate and including a first active layer. A second semiconductor laser element is bonded to the first semiconductor laser element with a first insulating film interposed therebetween. A first electrode is connected to the first semiconductor laser element. A second electrode is arranged on the surface of the first semiconductor laser element with the first insulating film interposed therebetween and connected to the second semiconductor laser element. The first semiconductor laser element has an optical waveguide formed in a region where the second semiconductor laser element is not bonded while the first electrode is arranged on the region, and the second electrode is formed to extend from between the second semiconductor laser element and first insulating film toward the region.

Abstract: Scalable, thermally efficient pump diode systems. These systems may include a first substrate having a plurality of grooves in alignment with a second substrate having a plurality of grooves. A first single emitter diode laser (“emitter”) may be disposed between the first substrate and the second substrate and aligned between two of the plurality of such grooves. Additional emitters or spacers may be disposed adjacent the first emitter such that at least one groove separates the elements (emitters/spacers). The grooves, which may comprise shallow scribes, channels, and/or other isolation structures, provide electrical isolation between adjacent emitters and/or spacers. A conductive layer may be disposed between the emitter(s) and the substrate(s), in electrical contact with each emitter, to provide power for operation of the emitters.

Abstract: An edge-emitting multi-beam semiconductor laser includes juxtaposed stripe-shaped light-emitting portions the number of which is N (wherein N?2), wherein a separation groove that electrically separates the light-emitting portions from each other is provided between the light-emitting portions, a first recess that is partly discontinuous is provided outside a first light-emitting portion, a second recess that is partly discontinuous is provided outside an Nth light-emitting portion.

Abstract: A semiconductor laser device that can suppress size increase of a semiconductor laser element and increase in an interval between light emitting portions and can improve productivity is provided. This semiconductor laser device has a first semiconductor laser element, and a second semiconductor laser element which is a monolithic multi-wavelength semiconductor laser element. The second semiconductor laser element includes a semiconductor substrate, and, of side faces of the semiconductor substrate of the second semiconductor laser element, a side face arranged opposite the first semiconductor laser element is inclined with respect to the normal direction of a major face of the semiconductor substrate so that a distance from the first semiconductor laser element is increasingly large away from a mounting member.

Abstract: A semiconductor laser system includes a diode laser tile. The diode laser tile includes a mounting fixture having a first side and a second side opposing the first side and an array of semiconductor laser pumps coupled to the first side of the mounting fixture. The semiconductor laser system also includes an electrical pulse generator thermally coupled to the diode bar and a cooling member thermally coupled to the diode bar and the electrical pulse generator.

Abstract: In an active layer 15 of a semiconductor laser device 3, a refractive index type main waveguide 4 is formed by a ridge portion 9a of a p-type clad layer 17. Side surfaces 4g and 4h of the main waveguide 4 form a relative angle ?, based on a total reflection critical angle ?c at the side surfaces 4g and 4h, with respect to a light emitting surface 1a and a light reflecting surface 1b. The main waveguide 4 is separated by predetermined distances from the light emitting surface 1a and the light reflecting surface 1b, and optical path portions 8a and 8b, for making a laser light L1 pass through, are disposed between one end of the main waveguide 4 and the light emitting surface 1a and between the other end of the main waveguide 4 and the light reflecting surface 1b. The optical path portions 8a and 8b are gain type waveguides and emit light components L2 and L3, which, among the light passing through the optical path portions 8a and 8b, deviate from a direction of a predetermined axis A, to the exterior.

Abstract: Provided is a surface emitting laser element array of low cost and high reliability. The surface emitting laser element array has a substrate having a semiconductor of a first conduction type; and a plurality of surface emitting laser elements each having, above the substrate, an active layer sandwiched between a first conduction type semiconductor layer area and a second conduction type semiconductor layer area and disposed between a upper reflective mirror and a lower reflective mirror, the surface emitting laser elements being separated from each other by an electric separation structure formed having such a depth as to reach the substrate. The first conduction type semiconductor layer area is arranged between the substrate and the active layer.

Abstract: Laser modules using two-dimensional laser diode arrays are combined to provide an intense laser beam. The laser diodes in a two-dimensional array are formed into rows and columns, and an optical assembly images light generated by laser diodes in a column into an optical fiber. The laser light outputs of the laser modules are combined by a spectral combiner into an optical fiber to form an intense laser beam.

Abstract: Second and third p-side pad electrodes are formed on an insulating film of a blue-violet semiconductor laser device on both sides of a first p-side pad electrode. The second p-side pad electrode and the third p-side pad electrode are formed separately from each other. Solder films are formed on the upper surfaces of the second and third p-side pad electrodes respectively. A fourth p-side pad electrode of a red semiconductor laser device is bonded onto the second p-side pad electrode with the corresponding solder film sandwiched therebetween. A fifth p-side pad electrode of an infrared semiconductor laser device is bonded onto the third p-side pad electrode with the corresponding solder film sandwiched therebetween. The second and third p-side pad electrodes are formed separately from each other, so that the fourth and fifth p-side pad electrodes are electrically isolated from each other.

Abstract: A diode laser structure includes multiple stripe emitters disposed next to each other, in which each of the stripe emitters is configured to emit, during operation, a laser beam having a corresponding beam parameter product with respect to a slow axis (BPPSA), where the stripe emitters are arranged such that the corresponding BPPSA of the laser beams successively decrease from a center of the diode laser structure towards a first edge of the diode laser structure and from the center of the diode laser structure towards a second edge of the diode laser structure, the second edge being opposite the first edge. The stripe emitters are oriented in a direction of the slow axis and are offset from one another in the direction of the slow axis.

Abstract: A surface emitting laser having a photonic crystal layer 130 on a substrate 105 with an active layer therebetween, in which the photonic crystal layer includes at least a first periodic structure for resonating in an in-plane direction and a second periodic structure for modulating a light intensity distribution in an in-plane direction. The light intensity in the photonic crystal layer is periodically distributed to a region having high light intensity and a region having low light intensity by the second periodic structure. Further, a conductive film 170 for performing current injection into the active layer is selectively provided just above the region having low light intensity. The surface emitting laser provides suppression of light absorption and highly efficient current injection into an active layer to attain a high power.

Abstract: A laser diode illuminator device and a method for optically conditioning the output beam radiated from such a device, so that highly-demanding illumination application requirements that call for high output powers within a specified field of illumination can be addressed. At the heart of the device is a two-dimensional stack of laser diode bars wherein the linear array of beamlets radiated by each laser diode bar is optically conditioned through its passage in a refractive-type micro-optics device followed by a cylindrical microlens. The micro-optics device performs collimation of the linear array of beamlets along the fast axis of the bars, and it also acts as a beam symmetrization device by interchanging the divergences of the laser beamlets along the fast and slow axes. The cylindrical microlens is for collimation of the beamlets along the slow axis.

Abstract: A semiconductor integrated device includes a plurality of wavelength tunable lasers, provided on a semiconductor substrate, and having oscillation wavelength ranges different from each other. Each of the wavelength tunable lasers includes an optical waveguide including, alternately in an optical axis direction, a gain waveguide portion and a wavelength controlling waveguide portion, and a diffraction grating provided over both the gain waveguide portion and the wavelength controlling waveguide portion. A value obtained by dividing a width of the wavelength controlling waveguide portion by a width of the gain waveguide portion in one of the plurality of wavelength tunable lasers is larger than a value obtained by dividing a width of the wavelength controlling waveguide portion by a width of the gain waveguide portion in a different one of the wavelength tunable lasers, which oscillates on a shorter wavelength side with respect to an oscillation wavelength range of the one wavelength tunable laser.

Abstract: A surface emitting laser includes a plurality of light-emitting portions for emitting laser light beams in different linearly polarized light directions. The light-emitting portions are formed on the substrate and located close to each other. The light-emitting portions include metal opening arrays through which light beams in different linearly polarized light directions respectively pass.

Abstract: To provide a surface emitting laser having a structure that can suppress the oscillation of a high-order transverse mode. In the surface emitting laser, a plurality of semiconductor layers including a lower DBR, an upper DBR, an active layer interposed therebetween, and a current confinement layer for confining a current injected to the active layer are stacked on a substrate, and a barrier structure limits the migration of a majority carrier, that has passed through a current unconfining portion, in an electric field application direction; the barrier structure is provided between the current confinement layer and the active layer so that an oscillation of a high-order transverse mode is suppressed by the barrier structure promoting the diffusion of the majority carrier in an in-plane direction of the barrier structure.

Abstract: The present invention provides a semiconductor laser device including: a plurality of light emitting sections arranged in strip shapes in parallel; a plurality of first electrodes arranged along top faces of the light emitting sections, respectively; an insulating film covering a whole surface of the plurality of first electrodes, and including contact apertures corresponding to the first electrodes, respectively; a plurality of second electrodes arranged in positions different from those of the plurality of light emitting sections, correspondingly to the first electrodes; a plurality of wiring layers arranged on the insulating layer, and electrically connecting the second electrodes and the corresponding first electrodes through the contact apertures, respectively; and a plurality of window regions arranged for the light emitting sections in the insulating film so as to expose the first electrodes, respectively, and including at least two window regions having areas different from each other.

Abstract: A laser light source device is disclosed, which reduces the coherence of the laser light and inexpensively achieves a visually recognizable level of speckle reduction without use of a mechanical driving means. The laser light source device includes: laser modules, each including a laser light source, an intensity modulation unit to apply intensity modulation to laser light emitted from the laser light source, and a first waveguide to receive the intensity-modulated laser light from the laser light source and output the laser light from an output end thereof; and a second waveguide including an input end optically connected to a light outputting area of the first waveguides to receive the laser light outputted from the first waveguides, the first waveguides being closely bundled in the vicinity of output ends thereof, wherein a core of the second waveguide at the input end is larger than the light outputting area.

Abstract: A method of manufacturing a semiconductor laser device includes steps of forming a third oblong substrate by bonding a first oblong substrate and a second oblong substrate, and dividing the third oblong substrate so that first side surfaces of the first semiconductor laser devices protrude sideward from positions formed with third side surfaces of the second semiconductor laser devices while the fourth side surfaces of the second semiconductor laser devices protrude sideward from positions formed with the second side surfaces of the first semiconductor laser devices, and the first electrodes are located on protruding regions of the first semiconductor laser devices.

Abstract: A semiconductor laser is a distributed feedback semiconductor laser in which the lasing wavelength can be changed, and includes a semiconductor substrate and a semiconductor layer portion provided on the substrate and including first and second active layers and an intermediate layer that optically couples the first active layer and the second active layer. The first active layer, the intermediate layer, and the second active layer are arranged in that order in a predetermined axis direction. The semiconductor laser further includes a diffraction grating that is optically coupled with the first and second active layers of the semiconductor layer portion, a first electrode and a second electrode for injecting carriers into the first active layer and the second active layer, respectively, and a third electrode for supplying the intermediate layer with a current. The grating extends in the predetermined axis direction and has a period that is uniform in the predetermined axis direction.

Abstract: On a first region that is a part of one main face of a semiconductor substrate 1, a first semiconductor laser structure 10 is formed so as to have a first lower cladding layer 3, a first active layer 4 with a first quantum well structure and first upper cladding layers 5, 7, which are layered in this order from the semiconductor substrate side, thereby forming a first resonator. On a second region that is different from the first region, a second semiconductor laser structure 20 is formed so as to have a second lower cladding layer 13, a second active layer 14 with a second quantum well structure and a second upper cladding layer 15, 17, which are layered in this order, thereby forming a second resonator. End face coating films 31, 32 are formed on facets of the first and the second resonators, and a nitrogen-containing layer 30 is formed between the facets of the first and the second resonators and the facet coating film.

Abstract: The laser device (22) is formed by a stack of laser diodes (4) arranged on plates (6) formed of a material that is electrically conductive and a good heat conductor. In order to obtain a high level of heat evacuation efficiency towards the cooling body (10) and to prevent electric short-circuiting problems, each plate has at the bottom end (24) thereof, an electrically insulating layer deposited on the surface thereof prior to being fixed to the cooling body by a securing material (26) that is preferably a good heat conductor, formed in particular by a braze layer. According to the invention, the insulating layer covers the end face of each plate and also goes up along the lateral faces of the latter over a certain height. The securing material is arranged under the end of the plate and also partially covers the insulating layer along the lateral faces of the plate.

Abstract: In an element wherein a plurality of ridges (16, 36) are arranged in parallel, supports (17, 37) are formed to sandwich each of the ridges (16, 36). More specifically, on an outer side of the ridge (16) in the element, the first support (17a) is formed, and on an inner side in the element, the second support (17b) is formed. On an outer side of the ridge (36) in the element, the first support (37a) is formed, and on an inner side in the element, the second support (37b) is formed. Thus, even when a resist is applied on an element surface and spin-coating is performed at the time of manufacturing the element, the resist on the inner side than the ridges (16, 36) in the element can be prevented from flowing into a groove between the ridges to a certain extent by means of the second supports (17b, 37b), and a resist film thickness on the inner sides of the ridges (16, 36) in the element can be prevented from being considerably small compared with that on the outer sides in the element.

Abstract: A semiconductor laser device has a red laser element and an infrared laser element on a substrate. The red laser element has a double hetero structure in which an InGaP-based or AlGaInP-based active layer is interposed between a first conductivity type cladding layer and a second conductivity type cladding layer having a ridge. The infrared laser element has a double hetero structure in which a GaAs-based or AlGaAs-based active layer is interposed between a first conductivity type cladding layer and a second conductivity type cladding layer having a ridge. Provided that a first electrode formed over the second conductivity type cladding layer has a width W1 in a direction perpendicular to a cavity length direction and a second electrode formed over the second conductivity type cladding layer has a width W2 in a direction perpendicular to a cavity length direction, the relations of W1>W2 and 80 ?m?W2?60 ?m are satisfied.

Abstract: Laser equipment for outputting output lights having different wavelengths includes: a substrate; an excitation light generation element for emitting excitation lights including surface emitting laser elements and disposed on the substrate; and a light converter having a pair of second reflection layers and a solid laser medium layer, both of which provide a resonator. The solid laser medium layer is capable of generating lights having different peak wavelengths by receiving the excitation lights. The light converter is disposed on an output surface of the excitation light generation element.

Abstract: A semiconductor laser device capable of flexibly coping even with a case where a large output power difference is required between a plurality of laser elements having different lasing wavelengths when reproducing white light is obtained. This semiconductor laser device (100) includes a red semiconductor laser element (10) having one or a plurality of laser beam emitting portions, a green semiconductor laser element (30) having one or a plurality of laser beam emitting portions, and a blue semiconductor laser element (50) having one or a plurality of laser beam emitting portions.

Abstract: An array of optically coupled cavities (called micro-cavities) of a semiconductor laser are defined by either an etch and/or by a native oxide of an aluminum-bearing III-V semiconductor material and are arranged serially end-to-end along the longitudinal direction. An etch and/or native oxide defines a refractive index change for the longitudinal optical mode and confines the optical field within the micro-cavities, resulting in reflection and optical feedback distributed periodically along the laser stripe in the form of an optically coupled micro-cavity. The wavelength of emission of the laser is controlled by a combination of the length of the optical micro-cavities and the spacing between adjacent optical micro-cavities. Single-longitudinal-mode operation is exhibited over an extended drive current range. In one embodiment, two or more linear arrays of end-coupled micro-cavities are arranged in the longitudinal axis of the laser cavity to obtain a tunable laser.

Abstract: Apparatuses for fabricating micro patterns using a laser diode array and methods for fabricating micro patterns are presented. The apparatus includes a laser diode array having at least one laser diode wherein light emitted from each laser diode is focused by a convex lens onto a second material layer attached to a first material layer. At least one driving shaft drives motion of the first and the second material layers. An adjustment means is used for adjusting the gap and pitch between adjacent laser diodes.

Abstract: Disclosed is a polarized light emitting diode (LED) capable of emitting polarized light in the front direction thereof by forming a first grating layer on a quantum well layer and forming a second grating layer on a substrate. The polarized LED includes a nitride thin film formed on a substrate, a quantum well layer formed on the nitride thin film, a first grating layer formed on the quantum well layer to allow a part of light generated from the quantum well layer to pass through the first grating layer and to reflect remaining light, and a second grating layer formed on the substrate to rotate the light reflected from the first grating layer such that the reflected light passes through the first grating layer.

Abstract: A method for producing high optical power density. Laser beams emitted from a plurality of laser bars are combined by spatial multiplexing to become substantially parallel with an optical axis. Each single laser bar includes one or more diode lasers. The slow axes of adjacent diode lasers of the single laser bar are substantially parallel with each other and the adjacent diode lasers emitting substantially to the same direction. The laser bars are arranged in two or more sectors around the optical axis. The width of the effective light-emitting near-field of at least one of the laser bars is less than 2.5 millimeters in the direction of the slow axis of the diode lasers of the at least one laser bar.

Abstract: A manufacturing method for manufacturing a laser light source device, includes: providing a first laser element having a first emitter, a second laser element having a second emitter, and a reflection member; adjusting a relative angle between the first laser element and the reflection member; adjusting a relative angle of the second laser element relative to the first laser element by using the reflection member; and adjusting a relative rotation angle between the first laser element and the second laser element and a relative position between the first laser element and the second laser element, so that the light emitted from the first emitter is incident into the second emitter and so that the light emitted from the second emitter is incident into the first emitter.

Abstract: A one-chip semiconductor laser device for use in a semiconductor laser apparatus has a structure in which a red semiconductor laser device and an infrared semiconductor laser device are stacked on a blue-violet semiconductor laser device. The blue-violet semiconductor laser device is manufactured by forming semiconductor layers on a GaN substrate. Each of the red semiconductor laser device and the infrared semiconductor laser device is manufactured by forming semiconductor layers on a GaAs substrate. The modulus of elasticity of GaAs is smaller than the modulus of elasticity of GaN. The length of each of the red semiconductor laser device and the infrared semiconductor laser device is longer than the length of the blue-violet semiconductor laser device.

Abstract: A heat sink is made of a material excellent in thermal conductivity and is mounted on a stem; a sub-mount substrate is made of a material excellent in insulation property and is mounted on the heat sink; a first lead frame made of a material excellent in electric conductivity and thermal conductivity and having a linear expansion coefficient similar to that of a semiconductor laser array, is mounted on the sub-mount substrate, having the semiconductor laser array mounted thereon, and composing a power feeding path of the semiconductor laser array; a second lead frame made of a material excellent in electric conductivity and thermal conductivity, is arranged on the sub-mount substrate side by side with the first lead frame, and composing the power feeding path of the semiconductor laser array; and a wire electrically bonds the semiconductor laser array and the second lead frame.

Abstract: Within a semiconductor laser device, mounting a semiconductor laser element array of multi-beam structure on a sub-mount, the semiconductor laser element array of multi-beam structure comprises one piece of a semiconductor substrate 11; a common electrode 1, which is formed on a first surface of the semiconductor substrate; a semiconductor layer 2, which is formed on the other surface of the semiconductor substrate, and has a plural number of light emitting portions 7 within an inside thereof; a plural number of anode electrodes 3 of a second conductivity type, which are formed above the plural number of light emitting portions, respectively; and a supporting portion 25, which is provided outside a region of forming the light emitting portions, wherein on one surface of the sub-mount is connected an electrode 3 of the semiconductor laser element array through a solder 4, and that solder 4 is formed to cover a supporting portion and an electrode neighboring thereto, and further on the electrode 3 is formed a g

Abstract: A laser array circuit decreases the size of a circuit pattern. A laser-diode (LD) driving switching element with a low on resistance is used in common with and switches conduction and non-conduction of a large current to each of a plurality of charge capacitors and charge switching elements that accumulate charge in the charge capacitors in respective drive circuits. An LD array and the LD driving switching element are closely located on a light-emitting board. By laying out the LD array and charge capacitors considering only the positional relationship therebetween, the size of a circuit pattern including LDs and the charge capacitors can be decreased.

Abstract: A multibeam laser apparatus and an image forming device using the same. The multibeam laser beam apparatus includes a common electrode unit, a plurality of light source units to emit light using the common electrode unit, and an isolating unit to interconnect the common electrode unit and the plurality of light source units. With such configuration for example, the laser apparatus can reduce distances between the respective light source units and the number of the electrodes, and thus reduce the number of wires and legs to produce a compact chip.

Abstract: A light source device includes a plurality of first laser emission units and a plurality of second laser emission units for emitting light. The plurality of first laser emission units and the plurality of second laser emission units are disposed on a flat surface. The first laser emission units and the second laser emission units are composed so that a drive for light emission is sequentially switched. Each of the second laser emission units is disposed between the adjoining first laser emission units.

Abstract: A semiconductor surface emitting optical amplifier chip utilizes a zigzag optical path within an optical amplifier chip. The zigzag optical path couples two or more gain elements. Each individual gain element has a circular aperture and includes a gain region and at least one distributed Bragg reflector. In one implementation the optical amplifier chip includes at least two gain elements that are spaced apart and have a fill factor no greater than 0.5. As a result the total optical gain may be increased. The optical amplifier chip may be operated as a superluminescent LED. Alternately, the optical amplifier chip may be used with external optical elements to form an extended cavity laser. Individual gain elements may be operated in a reverse biased mode to support gain-switching or mode-locking.

Abstract: A laser radiation source which is scalable with respect to output is designed in such a way that laser diode elements can be arranged on a carrier so as to be stacked equidistantly and with low stress at a low manufacturing cost. The laser radiation source comprises a vertical stack of laser diode elements contacted on both sides via electrically conductive substrate layers, and at least one multi-layer carrier comprising a first and a second metallic layer which are separated by at least one electrically insulating layer of nonmetallic material. At least one of the metallic layers is divided into metallic layer regions which are arranged adjacent to one another and at a distance from one another. Oppositely polarized substrate layers of adjacent laser diode elements are arranged on common layer regions of a metallic layer. Collimating lenses serve to collimate the radiation emitted by the laser diode elements.

Abstract: A structure has a photonic crystal layer comprising a first member made of a material having a first refractive index; and a second member made of a material having a second refractive index, wherein the first member has a plurality of holes periodically arranged, and the second member is placed in each of the holes so that a center of the second member is staggered from a center of the hole on a plane of the photonic crystal layer.

Abstract: A semiconductor laser diode capable of further improving temperature characteristics while sufficiently preventing a laser beam emission end surface portion from thermal destruction through a window structure is obtained. This semiconductor laser diode comprises an active layer having a window structure on a laser beam emission end surface portion and a p-type layer, formed on the surface of the active layer, containing Mg and Zn as impurities. The impurity concentration of Zn contained in the p-type layer is larger than the impurity concentration of Mg contained in the p-type layer.

Abstract: A high-brightness laser module is configured with a beam-compression unit capable of reducing a diameter of parallel light beams which are emitted by respective spaced apart individual laser diodes. The module further has an objective lens configured to losslessly launch the light with the reduced diameter into a fiber.

Abstract: A lock in pinned photodiode photodetector includes a plurality of output ports which are sequentially enabled. Each time when the output port is enabled is considered to be a different bin of time. A specified pattern is sent, and the output bins are investigated to look for that pattern. The time when the pattern is received indicates the time of flight. A CMOS active pixel image sensor includes a plurality of pinned photodiode photodetectors that use a common output transistor. In one configuration, the charge from two or more pinned photodiodes may be binned together and applied to the gate of an output transistor.