Abstract: A high-brightness laser module is configured with a beam-compression unit capable of reducing a diameter of parallel light beams which are emitted by respective spaced apart individual laser diodes. The module further has an objective lens configured to losslessly launch the light with the reduced diameter into a fiber.

Abstract: In a multi-beam semiconductor laser device, relative difference in shear strain applied to each of light-emitting portions of a laser chip mounted on a submount is suppressed, thereby reducing relative difference in polarization angle. A semiconductor laser element array mounted on a submount has a structure in which a semiconductor layer having two ridge portions is stacked on a substrate, and Au plating layers are formed on the surfaces of p type electrodes formed on the ridge portions. In each of the ridge portions, a central position of the Au plating layer in a width direction is intentionally displaced with respect to a central position of the underlying light-emitting portion in a width direction, so that shear strain is applied to each of the light-emitting portions at a stage before the semiconductor laser element array is mounted on the submount.

Abstract: A semiconductor laser element 10 according to the present invention comprises a waveguide 12 of a high mesa type. And then such the waveguide 12 comprises an oblique end face 17 as an emitting facet that is different from a cleaved end face 16. And hence it becomes possible to reduce a reflection factor at the end face by making of such the oblique end face 17, and it becomes possible to design a direction of an emitting beam 21, that is to be emitting from the oblique end face 17, to be independent of that for the cleaved end face 16 as well. Moreover, the emitting beam 21 is designed to be emitting as vertical to the cleaved end face 16. And then therefore in a case where an emitting beam from a semiconductor optical device is designed to be coupled with such as an optical fiber or another waveguide or the like, it is not necessary to device such as that the semiconductor laser element 10 is required to be arranged at a sub mount by being inclined to be oblique or the like.

Abstract: A diode laser having a beam-forming device and a method for producing it are described. The diode laser includes at least one diode laser bar, the diode laser bar having a multitude of emitters, the emitters being disposed next to each other in the direction of their longitudinal axes. The diode laser includes a beam-forming device assigned to the diode laser bar, for the laser beam emerging from the diode laser bar, the beam-forming device having a light-guide device having a plurality of fibers, into which the laser beam is coupled. The maximum thickness of the optical fibers at their end facing the diode laser bar is considerably smaller than their width.

Abstract: A blue-violet semiconductor laser device has a first p-electrode formed on its upper surface and a first n-electrode formed on its lower surface. A red semiconductor laser device has a second n-electrode formed on its upper surface and a second p-electrode formed on its lower surface. An infrared semiconductor laser device has a third n-electrode formed on its upper surface and a third p-electrode formed on its lower surface. Solder films are partially formed on the upper surface of the first p-electrode in the blue-violet semiconductor laser device. Two of the solder films are formed with a predetermined distance between them on the upper surface of the first p-electrode. This results in a portion of the first p-electrode being exposed. The first, second and third p-electrodes of the blue-violet semiconductor laser device, red semiconductor laser device, and infrared semiconductor laser device are common electrodes.

Abstract: A diode laser apparatus includes a plurality of laser bars, each laser bar having an emission direction and a beam path. The laser bars are disposed along an arc, the emission directions of the laser bars are directed toward an inside of the arc, and a slow-axis direction of each laser bar is oriented along the arc.

Abstract: A surface emitting laser element array comprises a plurality of surface emitting laser elements (15) on a same substrate (1) each comprising a mesa post formed of a laminated structure including an active layer (4) for reducing a crosstalk between the surface emitting laser elements constituting the surface emitting laser element array, and for improving a high speed response, wherein each of the surface emitting laser elements (15) comprises a first electrode (9), a second electrode (10) and a third electrode (11) that have a polarity different from that of the first electrode (9); the first electrode (9) is arranged on the mesa post; the second electrode (10) is arranged on one surface of the substrate (1) same as that of the first electrode (9); the third electrode (11) is arranged on the other surface of the substrate (1) opposite to that of the first electrode and the second electrode (9, 10) and is provided as a common electrode of the surface emitting laser elements (15); and an electric current is app

Abstract: A system to increase the brightness of, and control gaps in, the light from an external cavity, spectrally narrowed, stack of diode laser bars employing a stepped mirror and transparent plates in the external cavity.

Abstract: A laser light source device includes a laser light source that emits a laser beam as a fundamental wave and an optical wavelength conversion element that converts the fundamental wave into a second harmonic. An optical lens system including a first surface having positive power and a second surface having negative power is arranged between the laser light source and the optical wavelength conversion element. The first surface and the second surface are arranged in order from the laser light source side.

Abstract: A laser system. The laser system includes a first laser device configured to emit a first laser beam, a second laser device configured to emit a second laser beam, and a third laser device configured to emit a third laser beam. The laser system also includes a laser combiner configured to receive the first, second, and third laser beams and output the first, second, and third laser beams with less separation downstream of the laser combiner than upstream of the laser combiner.

Abstract: A powerful high-brightness laser pump modules is configured with a plurality of spaced laser diodes each generating a light beam at a pump wavelength, and respective groups of optical components guiding the light beams along parallel light paths. The groups of the optical components each include a lens assembly and a bending mirror configured to couple the beam light into an output fiber which is common to all groups of the optical component. At least one optical component of each group is provided with a dielectric layer capable of preventing propagation of a backreflected light toward laser diodes at a wavelength different from the pump wavelength.

Abstract: It is demonstrated that substantial operating-parameter-dependent temperature-differences can exist between diode-laser bars in pulsed operation of a stack of such bars arranged to provide a two-dimensional array of diode-laser emitters. These differences can produce distortion of the aggregate output spectrum of the stack. By selecting particular nominal emitting wavelengths of the diode-laser bars for specific positions in the stack, the aggregate emission-spectrum can be tailored to a desired shape for one or more sets of operating parameters of the stack.

Abstract: A device including a semiconductor laser device having a semiconductor laser chip, and a molded resin having a light diffusion capability. The semiconductor laser chip is covered with the molded resin.

Abstract: A fabrication method of a surface-emitting laser element includes a step of preparing a conductive GaN multiple-region substrate including a high dislocation density high conductance region, a low dislocation density high conductance region and a low dislocation density low conductance region, as a conductive GaN substrate; a semiconductor layer stack formation step of forming a plurality of group III-V compound semiconductor layer stack including an emission layer on the substrate; and an electrode formation step of forming a semiconductor side electrode and a substrate side electrode. The semiconductor layer and electrodes are formed such that an emission region into which carriers flow in the emission layer is located above and within the span of the low dislocation density high conductance region. Thus, a surface-emitting laser element having uniform light emission at the emission region can be obtained with favorable yield.

Abstract: Array comprising high power laser diode comprising laser light emitters, each defining, in a direction perpendicular to direction of propagation of an output laser beam, a fast axis and a slow axis; fast axis collimating means for collimating output laser beams in fast axis direction; and slow axis beam shaping means for collimating or focussing output laser beams in slow axis direction, said slow axis beam shaping means disposed external to said high power laser diode; wherein said laser light emitters are displaced relative to each other in fast axis direction or in fast and slow axis direction by equidistant spacings, respectively; and including optical means for forming output laser beam profile in far field of all laser light emitters consisting of said fast and slow axis collimated or focussed output laser beams arranged adjacently in seamless manner in one or two dimensions with optical fill factor of about 100%.

Abstract: A new class of light emitting and laser diodes is disclosed wherein ballistic (without collisions) electron propagation along the nanotubes, grown normally to the substrate plane on the common metal electrode, provides conditions for the light emission from the nanotubes. The electrons, tunneling from the input contact into high energy states in the nanotubes, emit light via electron energy relaxation between the quantum energy levels existing in the nanotubes due to quantum size effect. In the disclosed devices, planar layer deposition technology is used to form a diode structure with two electrodes attached to the nanotubes ends.

Abstract: In a laser device, a crystal array includes a laser gain crystal and an optically non-linear frequency conversion crystal. A pump source couples at least two mutually spatially separated pump beams into the crystal array. Between two pump beams, a saw kerf of the crystal array extends parallel to the pump beams.

Abstract: A compact solid-state laser array for nonlinear intracavity frequency conversion into desired wavelengths using periodically poled nonlinear crystals. The crystals contain dopants such as MgO and/or have a specified stoichiometry. A preferred embodiment comprises a microchip laser cavity that includes a solid-state gain chip, such as Nd:YVO4, which also provides polarization control of the laser; and a periodically poled nonlinear crystal chip such as PPMgOLN, for efficient frequency doubling of a infrared laser pump beam into the visible wavelength range. The described designs are especially advantageous for obtaining low-cost green and blue laser sources. The use of such high-efficiency pumps and nonlinear materials allows scaling of a compact, low-cost architecture to provide high output power levels in the blue/green wavelength range.

Abstract: A two-beam semiconductor laser device 10 includes: a two-beam semiconductor element LDC having a first and a second semiconductor laser elements LD1 and LD2 that can be driven independently and that are formed integrally on a substrate; and a submount 63 having, mounted on a front part thereof, the two-beam semiconductor laser element LDC with the light-emitting face thereof directed forward and having a first and a second electrode pads 64 and 65 connected to electrodes 61 and 62 of the first and second semiconductor laser element LD1 and LD2 by being kept in contact therewith. The first and second electrode pads 64 and 65 are formed to extend farther behind the two-beam semiconductor laser element LDC, and wires 14 and 16 are wire-bonded behind the two-beam semiconductor laser element LDC.

Abstract: A laser system includes at least two sources configured to provide at least two spatially separated laser beams, and a mount configured to mount the at least two sources along an arc, the arc defining an angular coordinate and a radial coordinate, wherein an axial coordinate is orthogonal to the angular coordinate and the radial coordinate, and the spatially separated laser beams are separated in the axial coordinate. The mount is further configured to mount the at least two sources providing thereby an offset of the laser beams in the axial coordinate such that the laser beams interleave in the axial direction at a center region of the arc.

Abstract: A laser diode array having a plurality of diode bars bonded by a hard solder to expansion matched spacers and mounted on a gas or liquid cooled heatsink. The spacers are formed of a material such as copper/diamond composite material having a thermal expansion that closely matches that of the laser bars.

Abstract: Arrangements for combination and fast-axis alignment of fast-axes of diode-laser beams are disclosed. Alignment arrangements include providing each diode-laser with a corresponding alignable fast-axis collimating lens, providing individually alignable mirrors for steering an re-orienting beams from each diode-laser, and providing single diode-laser slab-modules in which the diode-laser beams can be pre-aligned to a common propagation-axis direction, and in which edges and surfaces of the slabs can be used to align the fast and slow-axes of the beams. Beam combination methods include combination by dichroic elements, polarization-sensitive elements, and optical fiber bundles.

Abstract: In a monolithic dual wavelength laser device in which an infrared laser part 100 and a red laser part 130 are built on one n-type GaAs substrate 101, a p-type first cladding layer 105 of the infrared laser part 100 and a p-type first cladding layer 135 of the red laser part 130 are made of the same material and have different impurity concentrations.

Abstract: A vertical cavity surface emitting laser array is disclosed which allows wires for individually driving devices arrayed at a small pitch to be provided on the laser array with ease and with a high degree of freedom is provided. The vertical cavity surface emitting laser array includes a first substrate including a plurality of vertical cavity surface emitting laser devices each having an active layer disposed between reflection mirrors constituting a resonator, and a second substrate including wires for providing electrical contact with the surface emitting laser devices and having a configuration which permits transmission of light emitted from the surface emitting laser devices. In the vertical cavity surface emitting laser array, the second substrate is bonded to the first substrate on the laser emitting side of the first substrate.

Abstract: An array of light beam emitter sections comprises: a substrate having a surface divided into an array of sections; and a grouping of light emitters disposed at each surface section and configured to emit light beams at different emission angles with respect to the surface. Also disclosed is apparatus for establishing optical communication channels between the array of light beam emitter sections and an array of light detectors. Further disclosed is a method of establishing optical communication channels between the array of light emitter sections and the array of light detectors by mapping at least one light emitter of each grouping with a light detector of the detector array to establish optical communication channels between the arrays based on the mappings.

Abstract: Methods and devices for coupling the output light energy of one or more stacked laser emitter bar arrays using a beam interleaver and beam combiner to achieve high brightness and coupling efficiency. Some embodiments may include wavelength control devices and methods such as VIGs and the like.

Abstract: A semiconductor laser device and an image display device that efficiently release a heat from stripe active regions, and operated at a low-consumption current and a low-consumption electric power. A semiconductor laser element includes stripe active regions for emitting laser beams. On a base block, there are formed wirings electrically connected to stripe laser electrodes of the semiconductor laser element, respectively. The stripe laser electrodes corresponding to the stripe active regions are formed in proximity to a first surface of the semiconductor laser element, close to the active regions. An electric current is supplied to the active regions from connecting portions between each of the laser electrodes and the wirings.

Abstract: First and second semiconductor lasers interelement-separated from each other are formed. Total thickness of a fourth upper cladding layer and a second contact layer of the second semiconductor laser is smaller than total thickness of a second upper cladding layer and the first contact layer of the first semiconductor laser. First and second ridges are formed in the first and second semiconductor lasers by dry etching, using a resist as a mask, and the dry etching is stopped when a second etching stopper layer is exposed at the second ridge. The second upper cladding layer remaining on a first etching stopper layer at the first ridge is selectively removed by wet etching, using the resist as a mask.

Abstract: A laser assembly comprises a substrate and two or more lasers. The substrate has a substantially planar surface region and a raised feature. The raised feature comprises two or more reflective surfaces. Each of the two or more lasers is mounted to the substantially planar surface region and is configured to emit a laser beam directed towards the raised feature at a nonzero tilt angle in relation to the substantially planar surface region.

Abstract: A manufacturing method for manufacturing a laser light source device, includes: providing a first laser element having a first emitter, a second laser element having a second emitter, and a reflection member; adjusting a relative angle between the first laser element and the reflection member; adjusting a relative angle of the second laser element relative to the first laser element by using the reflection member; and adjusting a relative rotation angle between the first laser element and the second laser element and a relative position between the first laser element and the second laser element, so that the light emitted from the first emitter is incident into the second emitter and so that the light emitted from the second emitter is incident into the first emitter.

Abstract: An optical coupling device for coupling light with an optical waveguide comprises a mirror formed within an optical waveguide. The mirror comprises a first material, a first reflective end, and a second reflective end. The first material is light conducting and has a first refractive index. The first and second reflective ends reflect and transmit light. The mirror has an axis line. The optical coupling device is useful for extracting light from a waveguide and providing a backlight for a liquid crystal display.

Abstract: A surface-emitting semiconductor array device includes a substrate, a plurality of light-emitting portions, an electrode pad portion formed on the substrate and disposed through the plurality of light-emitting portions and a dividing groove, and having a plurality of electrode pads formed on an insulating film, and a plurality of metal wirings for connecting each of the plurality of light-emitting portions to a corresponding electrode pad through the dividing groove, the dividing groove has a wave-shaped side wall formed on the substrate.

Abstract: An apparatus that includes a first diode laser and a silicon-based support structure is provided. The first diode laser is configured to emit a first laser beam when powered. The support structure includes a silicon-based support plate, a silicon-based first fin structure, and a silicon-based second fin structure. The support plate has a first primary surface and a second primary surface opposite the first primary surface. The first fin structure has a first primary surface, a second primary surface opposite the first primary surface, and a plurality of edges between the first and the second primary surfaces including a first edge and a second edge opposite the first edge. The first fin structure is physically coupled to the support plate with the first edge of the first fin structure attached to the first primary surface of the support plate.

Abstract: According to an aspect of the present invention, there is provided a laser diode array including: a laser array chip including: a substrate; and at least three of laser diodes that are formed on the substrate; first electrodes that are formed on each of the laser diodes so as to be isolated from one another; a sub-mount; and second electrodes that are formed on the sub-mount so as to correspond to the first electrodes and so as to be isolated from one another, wherein the laser array chip is mounted on the sub-mount through the first electrodes and the second electrodes, and wherein, among contacting surfaces between each of the first electrodes and a corresponding one of the second electrodes, a contacting area of a central one of the contacting surfaces is larger than that of an end one of the contacting surfaces.

Abstract: A first semiconductor laser element is formed on a surface of the first substrate and including a first active layer. A second semiconductor laser element is bonded to the first semiconductor laser element with a first insulating film interposed therebetween. A first electrode is connected to the first semiconductor laser element. A second electrode is arranged on the surface of the first semiconductor laser element with the first insulating film interposed therebetween and connected to the second semiconductor laser element. The first semiconductor laser element has an optical waveguide formed in a region where the second semiconductor laser element is not bonded while the first electrode is arranged on the region, and the second electrode is formed to extend from between the second semiconductor laser element and first insulating film toward the region.

Abstract: An improved, dual diode convergence module which focuses the light energy of at least two separate diode chip laser wavelengths of into a single beam and, thus, which derives the benefit of both wavelengths.

Abstract: According to an aspect of the present invention, there is provided a semiconductor laser apparatus including: a laser device including: a semiconductor substrate, first and second resonators formed on the semiconductor substrate, and first and second electrodes that are respectively connected with the first and the second resonators and extend away from each other; and a submount including: third and fourth electrodes respectively adhered with the first and the second electrodes; wherein each of the first and the second electrodes includes: an energizing portion covering the corresponding resonator, an adhering portion being disposed separately from the energizing portion and having a height larger than that of the energizing portion, and a stress-absorbing portion formed in the adhering portion.

Abstract: A multibeam semiconductor laser diode having: an n-type semiconductor substrate; an n-type clad layer, an active layer, a p-type clad layer and a contact layer; a plurality of partitioning grooves extending from one end to the other end of the substrate and formed from the contact layer to a predetermined depth of the p-type clad layer; a stripe-shaped ridge sandwiched between two separation grooves; an insulating layer covering an area from each side wall of the contact layer of each ridge to an end of the partitioning region via the separation groove; a first electrode formed on a second plane of the substrate; and a second electrode formed in each partitioning region covering an area above the ridge, separation grooves and multilayer semiconductor layers outside the separation grooves, the second electrode being constituted of a lower second electrode layer and an upper second plated layer.

Abstract: A red laser portion and an infrared laser portion are integrated on an n-type GaAs substrate. A p-type cladding layer made of p-type AlGaInP in the red laser portion and a p-type cladding layer made of p-type AlGaInP in the infrared laser portion have a ridge stripe portion having a light emitting point. A current block layer made of SiNx is formed on both sides of each ridge stripe portion, and a strain relaxing layer made of ZrO2 is selectively formed on an outer side of each ridge stripe region on the current block layer. Provided that Tc is a thermal expansion coefficient of the p-type cladding layers, Tb is a thermal expansion coefficient of the current block layer, and Ts is a thermal expansion coefficient of the strain relaxing layer, the relation of Tb<Tc<Ts is satisfied.

Abstract: An optical assembly, such as a multiple output diode laser pump source for EDFAs, is formed by pressing an optical array emitter chip against a standoff structure protruding from a submount such that the emitter chip deforms to match the curvature of the standoff structure. An IO chip is also juxtaposed against the standoff structure such that its optical receivers can receive optical energy from the emitter chip. The IO chip can provide various optical functions, and then provide an optical array output for coupling into an optical fiber array. The standoff structure preferably contacts the emitter chip over an aggregate contact area much smaller than the area by which the emitter chip overlaps the submount. The materials used for bonding the emitter chip and the IO chip to the submount are disposed in the recesses between standoffs and not on the contact surfaces of the standoff structure.

Abstract: An array of light beam emitter sections comprises: a substrate having a surface divided into an array of sections; and a grouping of light emitters disposed at each surface section and configured to emit light beams at different emission angles with respect to the surface. Also disclosed is apparatus for establishing optical communication channels between the array of light beam emitter sections and an array of light detectors. The apparatus comprises a controller coupled to the arrays of emitter sections and detectors for mapping at least one light emitter of each grouping with a light detector of the detector array to establish optical communication channels between the arrays based on the mappings.

Abstract: Various methods and apparatuses are described in which an array of optical gain mediums capable of lasing are contained in a single integral unit. The array may contain four or more optical gain mediums capable of lasing. Each optical gain medium capable of lasing supplies a separate optical signal containing a band of wavelengths different than the other optical gain mediums capable of lasing in the array to a first multiplexer/demultiplexer. A connection for an output fiber exists to route an optical signal to and from a passive optical network.

Abstract: A high-brightness laser module is configured with a beam-compression unit capable of reducing a diameter of parallel light beams which are emitted by respective spaced apart individual laser diodes. The module further has an objective lens configured to losslessly launch the light with the reduced diameter into a fiber.

Abstract: A pumping system for a laser source includes a pump diode that emits a pump beam having a central wavelength that varies with temperature. A selective mirror having a plurality of spectral reflectivity peaks, corresponding to a plurality of predetermined wavelengths, locks the operation of the pump diode onto one of the predetermined wavelengths in accordance with temperature.

Abstract: A manufacturing method of an active matrix organic light emitting diode (AMOLED) display and an apparatus for manufacturing the AMOLED display, where the display has improved surface flatness and thickness uniformity as well as an improved image quality at edge regions of a pattern. According to the exemplary embodiment of the present invention, an anode electrode is formed on a lower structure of a substrate, an organic layer is formed on the anode electrode by imaging a complex laser beam on a donor film disposed on the substrate having light emitting materials, the complex laser beam having energy distribution inclination over 2%/?m at a threshold energy. The donor film is removed, and a cathode electrode is formed on the organic layer.

Abstract: A light source module for use in display systems is provided herein. According to one exemplary embodiment, the light source module includes a plurality of coherent light sources, and a diffraction grating in optical communication with the coherent light source, the diffraction grating being configured to provide feedback to the coherent light source to produce a plurality of spectra over a broad spectrum.

Abstract: There is provided a rotary disk laser module including disk comprised of at least one lasing material. The lasing material may be excited by a laser excitation source, such as an optical pump beam directed onto the disk. The laser gain region contains excited lasing material and extends between the first and second surfaces of the disk. A laser generator is formed when the gain region is brought into optical communication with a laser generator. A laser generator may be a laser oscillator or a laser amplifier. The disk may move in order to enable various lasing functionality to the laser module. For instance, the disk may rotate, translate, or tilt to rotate the gain region, provide various quantum effects, or to enable heat transfer with a heat sink. A high-power laser generator may be formed by using a number of disks containing lasing material, exciting the lasing material using at least one laser excitation source, and bringing them into optical communication with a laser generator.

Abstract: A carrier substrate (100) with laser sources includes a transparent center substrate (20), an upper substrate (30) adhered to the center substrate having openings (40) formed therein to expose the center substrate on a first side, and a lower substrate (32) adhered to the center substrate on a second side opposite the first side and having openings (42) formed therein to expose the center substrate on the second side, the openings on the lower substrate corresponding to positions of the openings in the upper substrate. Frequency conversion elements (60) are disposed on the center substrate within the openings of the lower substrate. Laser dies (70) are aligned to the frequency conversion elements and coupled to the lower substrate to provide light though the frequency conversion elements and the center substrate during operation. Methods for fabrication are also disclosed.

Abstract: A semiconductor laser diode array is provided. The semiconductor laser diode array includes: a lower semiconductor laser diode chip having a dual structure including a lower substrate, a first laser generating region disposed on the lower substrate, and a second laser generating region disposed on the lower substrate and separated from the first laser generating region; an upper semiconductor laser diode chip having a dual structure including an upper substrate, a third laser generating region disposed on the upper substrate, and a fourth laser generating region disposed on the upper substrate and separated from the third laser generating region; and an electrode unit electrically connecting the first through fourth laser generating regions to the outside.

Abstract: The present application is directed at providing a new lasing device having increased production yields over other single mode laser devices. In particular, a semiconductor lasing device is provided having at least two lasing devices formed on a common substrate. The lasing device is arranged so that in use a preferred lasing device is operational and remaining lasing devices are redundant. This redundancy improves the production yield since only one of the lasing devices needs to function correctly as the others are unused.