Abstract: The present invention is made to provide an extreme ultraviolet light source target or an X-ray source target having a good operationality. An extreme ultraviolet light source target in accordance with an aspect of the present invention is obtained by including a heavy metal such as tin into a matrix made of a polymeric material such as hydroxylpropylcellulose (HPC). The target can be manufactured by mixing the heavy metal and the polymeric material with a solvent, and evaporating the solvent. Since the target uses the polymeric material as a matrix, the target can be easily deformed to have a desired shape. For this reason, the target can be easily attached to a target holder irrespective of the shape of the holder, resulting in a good operationality of the target. Furthermore, an emission efficiency can be improved by including the heavy metal at a low density.

Abstract: An EUV light source apparatus capable of preventing deterioration and/or breakage of a filter for filtering EUV light. The EUV light source apparatus includes an EUV generation chamber in which EUV light is generated; a target material supply unit for supplying a target material into the EUV light generation chamber; a laser source for applying a laser beam to the target material supplied into the EUV light generation chamber to generate plasma; collection optics for collecting EUV light radiated from the plasma; a filter for filtering the EUV light collected by the collection optics; and a filter protecting member provided between the plasma and the filter, for protecting the filter by blocking flying matter flying from the plasma toward the filter.

Abstract: A method of manufacturing a mask includes designing a first mask data pattern, designing a second mask data pattern for forming the first mask data pattern, acquiring a first emulation pattern, which is predicted from the second mask data pattern, using layout-based Self-Aligning Double Patterning (SADP) emulation, comparing the first emulation pattern with the first mask data pattern, and modifying the second mask data pattern according to results of the comparison. The method further includes performing Optical Proximity Correction (OPC) on the modified second mask data pattern, acquiring second emulation patterns, which are predicted from the second mask data pattern on which the OPC has been performed, using image-based SADP emulation, and comparing the second emulation patterns and the first mask data pattern and manufacturing a first mask layer, which corresponds to the second mask data pattern on which the OPC has been performed, according to the results of the comparison.

Abstract: A near-field exposure apparatus includes a near-field exposure mask and a mechanism places a substrate, to be exposed, opposed to the near-field exposure mask. A mechanism performs relative alignment of the near-field exposure mask and the substrate to be exposed. A mechanism closely contacts the near-field exposure mask and the substrate to be exposed, with each other. A mechanism projects exposure light to the near-field exposure mask, and a soft X-ray irradiating device removes static electricity charged in at least one of the near-field exposure mask and the substrate to be exposed. The soft X-ray irradiating device is disposed such that the near-field exposure mask is located between the soft X-ray irradiating device and the substrate to be exposed.

Abstract: A source configured to generate radiation for a lithographic apparatus is disclosed. The source includes an anode, and a cathode. The cathode and the anode are configured to create a discharge in a fuel in a discharge space between the anode and the cathode so as to generate a plasma, the cathode and the anode positioned relative to each other so that, in use, current lines extending between the anode and the cathode are substantially curved so as to create a force that substantially radially compresses the plasma only in a region proximate an upper surface of the cathode or of the anode.

Abstract: Devices are disclosed herein which may comprise an EUV reflective optic having a surface of revolution that defines a rotation axis and a circular periphery. The optic may be positioned to incline the axis at a nonzero angle relative to a horizontal plane, and to establish a vertical projection of the periphery in the horizontal plane with the periphery projection bounding a region in the horizontal plane. The device may further comprise a system delivering target material, the system having a target material release point that is located in the horizontal plane and outside the region, bounded by the periphery projection and a system generating a laser beam for irradiating the target material to generate an EUV emission.

Abstract: An optical sensor apparatus for use in an extreme ultraviolet lithographic system is disclosed. The apparatus includes an optical sensor comprising a sensor surface and a removal mechanism configured to remove debris from the sensor surface. Accordingly, dose and/or contamination measurements may be carried out conveniently for the lithographic system.

Abstract: A reflector structure suitable for extreme ultraviolet lithography (EUVL) is provided. The structure comprises a substrate having a multi-layer reflector. A capping layer is formed over the multi-layer reflector to prevent oxidation. In an embodiment, the capping layer is formed of an inert oxide, such as Al2O3, HfO2, ZrO2, Ta2O5, Y2O3-stabilized ZrO2, or the like. The capping layer may be formed by reactive sputtering in an oxygen environment, by non-reactive sputtering wherein the materials are sputtered directly from the respective oxide targets, by non-reactive sputtering of the metallic layer followed by full or partial oxidation (e.g., by natural oxidation, by oxidation in oxygen-containing plasmas, by oxidation in ozone (O3), or the like), by atomic level deposition (e.g., ALCVD), or the like.

Abstract: Disclosed is a method for ablating hyaluronan-based hydrogels with X-rays, the method comprising the steps of: (a) preparing hyaluronan-based hydrogels; and (b) performing X-ray irradiation to the hyaluronan-based hydrogels to induce a degradation of the hyaluronan-based hydrogels by a gel-to-sol transition during the X-ray irradiation. Disclosed is also a method for fabricating three-dimensional microchannels of hyaluronan hydrogels with a finely tunable X-ray ablation technique.

Abstract: Grazing incidence collectors (GICs) for extreme ultraviolet (EUV) and X-ray radiation sources, such as laser produced plasma (LPP) sources, are disclosed. Source-collector systems comprising GICs and LPP sources are also disclosed. A laser beam is directed along the collector axis to a fuel target to form the LPP source, and the collector is arranged to collect the radiation and reflect it to an intermediate focus. The collector may include one or more grazing-incidence mirrors, and these mirrors may be electroformed. lithography systems that employ the source-collector systems as disclosed herein.

Abstract: The present invention relates a probe forming lithography system for generating a pattern on to a target surface such as a wafer, using a black and white writing strategy, i.e. writing or not writing a grid cell, thereby dividing said pattern over a grid comprising grid cells, said pattern comprising features of a size larger than that of a grid cell, in each of which cells said probe is switched “on” or “off, wherein a probe on said target covers a significantly larger surface area than a grid cell, and wherein within a feature a position dependent distribution of black and white writings is effected within the range of the probe size as well as to a method upon which such system may be based.

Abstract: A zone-optimized mirror (MZ) for reflecting extreme ultraviolet (EUV) or X-ray radiation (18) includes a reflective surface (S) having two or more substantially discrete zones (Z1, Z2, . . . Zn) that include respective coatings (C1, C2, . . . Cn). Each coating is configured to optimally reflect a select range of incident angles of the radiation incident thereon.

Abstract: An apparatus for measuring an image of a pattern to be formed on a semiconductor by scanning the pattern using a scanner, the apparatus including an EUV mask including the pattern, a zoneplate lens on a first side of the EUV mask and adapted to focus EUV light on a portion of the EUV mask at a same angle as an angle at which the scanner will be disposed with respect to a normal line of the EUV mask, and a detector arranged on another side of the EUV mask and adapted to sense energy of the EUV light from the EUV mask, wherein NAzoneplate=NAscanner/n and NAdetector=NAscanner/n*?, where NAzoneplate denotes a NA of the zoneplate lens, NAdetector denotes a NA of the detector, and NAscanner denotes a NA of the scanner, ? denotes an off-axis degree of the scanner, and n denotes a reduction magnification of the scanner.

Abstract: An imaging optical system has a plurality of mirrors. These image an object field in an object plane into an image field in an image plane. In the imaging optical system, the ratio of a maximum angle of incidence of imaging light) on reflection surfaces of the mirrors and an image-side numerical aperture of the imaging optical system is less than 33.8°. This can result in an imaging optical system which offers good conditions for a reflective coating of the mirror, with which a low reflection loss can be achieved for imaging light when passing through the imaging optical system, in particular even at wavelengths in the EUV range of less than 10 nm.

Abstract: A gas flow management system may comprise a first and second enclosing walls at least partially surrounding first and second respective spaces; a system generating plasma in the first space, the plasma emitting extreme ultraviolet light; an elongated body restricting flow from the first space to the second space, the body at least partially surrounding a passageway and having a first open end allowing EUV light to enter the passageway from the first space and a second open end allowing EUV light to exit the passageway into the second space, the body shaped to establish a location having a reduced cross-sectional area relative to the first and second ends; and a flow of gas exiting an aperture, the aperture positioned to introduce gas into the passageway at a position between the first end of the body and the location having a reduced cross-sectional area.

Abstract: The present invention relates to an alignment film printing mask, and more particularly, to a jig for an alignment film printing mask. A jig according to the present invention includes a plurality of supporting members each having at least one bent portion, arranged at regular intervals along a width direction of the alignment film printing mask for supporting the alignment film printing mask, at l one connection member for connecting the supporting members, and fastening units for securing the alignment film printing mask supported by the supporting members.

Abstract: Projection-optical systems are disclosed that reduce OoB radiation doses on the wafer while reducing deterioration of optical properties of the systems. An exemplary system includes a first reflector having a reflectance for light of a second predetermined wavelength, different from light of a first predetermined wavelength, that is less than a predetermined reflectance. The system also includes a second reflector having a reflectance for light of the second wavelength which is greater than the predetermined reflectance. When the reflectors in the system are classified as reflectors having a high percentage of overlap for the reflecting regions corresponding to two different points on the wafer, and reflectors having a low percentage of overlap for the reflecting regions, then, among the reflectors having a lower percentage of overlap for the reflecting regions, the most upstream reflector in the light path of the system is the second reflector.

Abstract: The present invention presents an exposure device, which includes an object stage on which the object is to be set, at least one aperture member for splitting a light beam from an optical source into first and second light beams, first and second spatial light modulators for spatially modulating the first and second light beams, respectively, first and second projection optical systems for irradiating the object with the first and second light beams, at least one first optical sensor for detecting intensity of the light beam from the optical source, one or more second optical sensors for detecting intensities of the first and second light beams from the first and second projection optical systems, respectively, and a decision section for diagnosing status of a route between the aperture member and the object, based on the results of the first and second sensors.

Abstract: The present invention presents an exposure device, which includes an optical source for emitting a UV ray, a lighting system for shaping the UV ray into a collimated light beam, an aperture member for producing rectangular first and second light beams based on the light beam from lighting system by using the first and second rectangular windows, first and second spatial light modulators for spatially modulating the first and second light beams, respectively, and first and second projection lighting systems for guiding the modulated first and second light beams to the object.

Abstract: A debris mitigation system for trapping debris coming from a tin debris-generating radiation source is provided. The debris mitigating system includes a debris barrier comprising a plurality of foils, and a cleaning system constructed and arranged to clean the foils. The cleaning system includes a supply unit to provide a liquid alloy to the foils to dissolve and flush trapped debris from the foils. The alloy includes gallium, indium, tin, or any combination thereof.

Abstract: Apparatus and methods for compensating for the movement of a substrate in a lithographic apparatus during a pulse of radiation include providing a pivotable mirror configured to move a patterned radiation beam incident on the substrate in substantial synchronism with the substrate.

Abstract: A reflective optical system, in which radiation from a radiation source is directed to an image focus or intermediate focus, including one or more mirrors (symmetric about the optical axis). Each mirror has at least first and second reflective surfaces, whereby radiation from the source undergoes successive grazing incidence reflections in an optical path at first and second reflective surfaces. The first and second reflective surfaces are formed such that the angles of incidence of the successive grazing incidence reflections at the first and second reflective surfaces are substantially equal. Each mirror may be formed as an electroformed monolithic component, wherein the first and second reflective surfaces are each provided on a respective one of two contiguous sections of the mirror. The reflective optical system may be embodied in a collector optical system for EUV lithography, or in an EUV or X-ray telescope or imaging optical system.

Abstract: The present invention relates to a static pressure slider including a stationary member 2, and a movable member 3 configured to be movable relative to the stationary member 2 under a condition that a static pressure fluid layer is provided between the stationary member 2 and the movable member 3. The static pressure slider further includes a first conductive layer 25 (26-28), and a second conductive layer 31A (32A-34A) with a distance at least in a portion relative to the first conductive layer 25 (26-28) configured to be changeable by an electrostatic force imposed between the first and second conductive layers 25 (26-28) and 31A (32A-34A). The present invention further relates to a transferring device and a processing device both provided with the static pressure slider.

Abstract: A radiation system for generating a beam of radiation that defines an optical axis is provided. The radiation system includes a plasma produced discharge source for generating EUV radiation. The discharge source includes a pair of electrodes constructed and arranged to be provided with a voltage difference, and a system for producing a plasma between the pair of electrodes so as to provide a discharge in the plasma between the electrodes. The radiation system also includes a debris catching shield for catching debris from the electrodes. The debris catching shield is constructed and arranged to shield the electrodes from a line of sight provided in a predetermined spherical angle relative the optical axis, and to provide an aperture to a central area between the electrodes in the line of sight.

Abstract: A debris prevention system is constructed and arranged to prevent debris that emanates from a radiation source from propagating with radiation from the radiation source into or within a lithographic apparatus. The debris prevention system includes an aperture that defines a maximum emission angle of the radiation coming from the radiation source, and a first debris barrier having a radiation transmittance. The first debris barrier includes a rotatable foil trap. The debris prevention system also includes a second debris barrier that has a radiation transmittance. The first debris barrier is configured to cover a part of the emission angle and the second debris barrier is configured to cover another part of the emission angle.

Abstract: A wafer chuck for use in a lithographic apparatus, which includes a low-thermal expansion glass ceramic substrate, a silicon silicon carbide layer, and a bonding layer comprising silicate having a strength of at least about 5 megapascals, the bonding layer attaching the silicon silicon carbide layer to the substrate is described. Also, a method of forming a wafer chuck for use in a lithographic apparatus, which includes coating a portion of one or both of a low-thermal expansion glass ceramic substrate and a silicon silicon carbide layer with a bonding solution, and contacting the substrate and the silicon silicon carbide layer to bond the substrate and the silicon silicon carbide layer together is described.

Abstract: A vertically standing IPMC includes a substrate, a first electrode positioned substantially vertical with respect to an upper surface of the substrate, a second electrode positioned substantially vertical with respect to the upper surface of the substrate and disposed opposite to the first electrode, and an ionic polymer film interposed between the first electrode and the second electrode and standing substantially vertical with respect to the upper surface of the substrate.

Abstract: According to one exemplary embodiment, an extreme ultraviolet (EUV) source collector module for use in a lithographic tool comprises an EUV debris mitigation filter. The EUV debris mitigation filter can be in the form of an aerogel film, and can be used in combination with an EUV debris mitigation module comprising a combination of conventional debris mitigation techniques. The EUV debris mitigation filter protects collector optics from contamination by undesirable debris produced during EUV light emission, while advantageously providing a high level of EUV light transmittance. One disclosed embodiment comprises implementation of an EUV debris mitigation filter in an EUV source collector module utilizing a discharge-produced plasma (DPP) light source. One disclosed embodiment comprises implementation of an EUV debris mitigation filter in an EUV source collector module utilizing a laser-produced plasma (LPP) light source.

Abstract: A processing method uses a processing system which includes an atmosphere replacing chamber having first and second gate valves, and a container that has an inside maintained in a reduced pressure or vacuum atmosphere and provides a predetermined process to an object, wherein the atmosphere replacing chamber is connected to the container through the first gate valve and a space different from the container through the second gate valve. The processing method includes the steps of exhausting the atmosphere replacing chamber while introducing first gas below predetermined humidity to the atmosphere replacing chamber, and vacuum-pumping the atmosphere replacing chamber after said exhausting step, by reducing an amount of the first gas to be introduced into the atmosphere replacing chamber.

Abstract: A semiconductor mask correcting device is provided with an image acquiring unit acquiring a mask image, an extraction unit extracting only a main pattern from the mask data, an inspection unit inspecting a defective portion by comparing the extracted main pattern with a main pattern which is obtained from the mask image after a drawing by matching to each other, and a correction unit correcting the defective portion specified by the inspection unit, wherein the extraction unit includes a recognition section recognizing the main pattern and the assist pattern as a figure, a specification section specifying the assist pattern from figures which is recognized on the basis of a predetermined condition, and a main pattern extracting section extracting as the main pattern a figure other than the assist pattern.

Abstract: In general, in one aspect, the invention features a system that includes an illumination system of a microlithography tool, the illumination system including a first component having a plurality of elements. During operation of the system, the elements direct radiation from a source along an optical path to an arc-shaped object field at an object plane of a projection objective, and at least one of the elements has a curved shape that is different from the arc-shape of the object field.

Abstract: An optical sensor apparatus for use in an extreme ultraviolet lithographic system is disclosed. The apparatus includes an optical sensor comprising a sensor surface and a removal mechanism configured to remove debris from the sensor surface. Accordingly, dose and/or contamination measurements may be carried out conveniently for the lithographic system.

Abstract: Disclosed are a mirror unit and a method of producing the same. In one preferred embodiment, the mirror unit includes a mirror with a multilayered film formed on a substrate, the multilayered film having two materials periodically laminated in layers on the substrate, and a substrate deforming device for producing deformation of a shape of the substrate of the mirror, wherein, in the multilayered film, the number of laminated layers in a predetermined region of the substrate differs from that in another region of the substrate. A mirror unit producing method according to another preferred embodiment includes forming a multilayered film on a substrate, the multilayered film having two materials periodically laminated in layers on the substrate, providing substrate deforming means in association with the substrate, the deforming means having a function for producing deformation of the shape of the substrate, and partially removing the multilayered film.

Abstract: A lithographic apparatus configured to project a patterned beam of radiation onto a target portion of a substrate is disclosed. The apparatus includes a first radiation dose detector and a second radiation dose detector, each detector comprising a secondary electron emission surface configured to receive a radiation flux and to emit secondary electrons due to the receipt of the radiation flux, the first radiation dose detector located upstream with respect to the second radiation dose detector viewed with respect to a direction of radiation transmission, and a meter, connected to each detector, to detect a current or voltage resulting from the secondary electron emission from the respective electron emission surface.

Abstract: X-rays are irradiated at the board 5 from the X-ray generator 11, the image of the standard marks 50, 51 are projected on the fluorescence screen 12, the resulted image is photographed simultaneously by one shot of the visible light CCD camera 13 and finally processed by the control device 9 to simultaneously determine the position of the standard marks 50 and 51. the alignment marks depicted on the photo masks 24 and 25 are imprinted on the dry film resist layers 55 respectively based on the positions of the standard marks 50 and 51 by irradiating X-rays through the sets of mirrors 22, 23 on the dry film resist layers 55.

Abstract: General purpose methods for the fabrication of integrated circuits from flexible membranes formed of very thin low stress dielectric materials, such as silicon dioxide or silicon nitride, and semiconductor layers. Semiconductor devices are formed in a semiconductor layer of the membrane. The semiconductor membrane layer is initially formed from a substrate of standard thickness, and all but a thin surface layer of the substrate is then etched or polished away. In another version, the flexible membrane is used as support and electrical interconnect for conventional integrated circuit die bonded thereto, with the interconnect formed in multiple layers in the membrane. Multiple die can be connected to one such membrane, which is then packaged as a multi-chip module. Other applications are based on (circuit) membrane processing for bipolar and MOSFET transistor fabrication, low impedance conductor interconnecting fabrication, flat panel displays, maskless (direct write) lithography, and 3D IC fabrication.

Abstract: A lithographic apparatus includes a radiation system including a radiation source for the production of a radiation beam, and a contaminant trap arranged in a path of the radiation beam. The contaminant trap includes a plurality of foils or plates defining channels that are arranged substantially parallel to the direction of propagation of said radiation beam. The foils or plates can be oriented substantially radially with respect to an optical axis of the radiation beam. The contaminant trap can be provided with a gas injector which is configured to inject gas at least at two different positions directly into at least one of the channels of the contaminant trap.

Abstract: A method of contact lithography includes predicting distortions likely to occur in transferring a pattern from a mold to a substrate during a contact lithography process; and modifying the mold to compensate for the distortions. A contact lithography system includes a design subsystem configured to generate data describing a lithography pattern; an analysis subsystem configured to identify one or more distortions likely to occur when using a mold created from the data; and a mold modification subsystem configured to modify the data to compensate for the one or more distortions identified by the analysis subsystem.

Abstract: The present invention is directed to the use of vitreous carbon as a substrate material for providing masks for X-ray lithography. The new substrate also enables a small thickness of the mask absorber used to pattern the resist, and this enables improved mask accuracy. An alternative embodiment comprised the use of vitreous carbon as a LIGA substrate wherein the VC wafer blank is etched in a reactive ion plasma after which an X-ray resist is bonded. This surface treatment provides a surface enabling good adhesion of the X-ray photoresist and subsequent nucleation and adhesion of the electrodeposited metal for LIGA mold-making while the VC substrate practically eliminates secondary radiation effects that lead to delamination of the X-ray resist form the substrate, the loss of isolated resist features, and the formation of a resist layer adjacent to the substrate that is insoluble in the developer.

Abstract: A mask used for a Lithographie, Galvanofomung, and Abformung (LIGA) process, a method for manufacturing the mask, and a method for manufacturing a microstructure using a LIGA process.

Abstract: An electrode-less discharge source of extreme ultraviolet (EUV) radiation (10) efficiently assembles a hot, dense, uniform, axially stable plasma column (5) with magnetic pressure and inductive current drive. It employs theta-pinch-type magnetic compression of plasma confined in a magnetic mirror. Plasma, confined in a magnetic mirror, is made to radiate by resonant magnetic compression. The device comprises a radiation-source gas input nozzle (1), an optional buffer-gas input flow (2), mirror-field coils (9a, 9b), theta-pinch coils (8a, 8b), a plasma and debris dump (11), and an evacuation port (7). The circular currents yield an axially stable plasma-magnetic-field geometry, and a reproducible, stable, highly symmetrical EUV source.

Abstract: A method is provided wherein a lithographic projection apparatus is used to print a series of test patterns on a test substrate to measure printed critical dimension as function of exposure dose setting and focus setting. A full-substrate analysis of measured critical dimension data is modeled by a response model of critical dimension. The response model includes an additive term which expresses a spatial variability of the response with respect to the surface of the test substrate. The method further includes fitting the model by fitting model parameters using measured critical dimension data, and controlling critical dimension using the fitted model.

Abstract: An illumination system is used to illuminate a specified illumination field of an object surface with EUV radiation. The illumination system has an EUV source and a collector to concentrate the EUV radiation in the direction of an optical axis. A first optical element is provided to generate secondary light sources, and a second optical element is provided at the location of these secondary light sources, the second optical element being part of an optical device which includes further optical elements, and which images the first optical element into an image plane into the illumination field. Between the collector and the illumination field, a maximum of five reflecting optical elements are arranged. These optical elements reflect the main beam either grazingly or steeply. The optical axis, projected onto an illumination main plane, is deflected by more than 30° between a source axis portion and a field axis portion.

Abstract: There is provided a multi-mirror-system for an illumination system, especially for lithography with wavelengths ?193 nm. The system includes light rays traveling along a light oath from an object plane to an image plane, and an arc-shaped field in the image plane, whereby a radial direction in the middle of the arc-shaped field defines a scanning direction. The first mirror and the second mirror are arranged in the light path in such a position and having such a shape, that the edge sharpness of the arc-shaped field in the image plane is smaller than 5 mm in the scanning direction. Furthermore, the light rays are impinging on the first mirror and the second mirror with incidence angles ?30° or ?60° relative to a surface normal of the first and second mirror.

Abstract: The present invention provides a method of delivering solid material at a position far enough from any surrounding solid with high enough target density without scattering debris to the environment. In the present invention, radiation is generated from plasma produced by laser irradiation on a material. This material is a cluster of particles that is composed of many fine particles bound together with a binder that vaporizes at temperature lower than melting point of fine particles. Density of particles in a particle-cluster 8 is increased by vaporizing a solvent 7 by heating a droplet 5 with the irradiation of laser 6. Solvent of a droplet occupies large fraction of the droplet in order to stabilize droplet generation. This solvent is vaporized prior to delivery to a vacuum chamber 9 for plasma generation. This vaporization helps to avoid degradation of vacuum of the chamber 9. The diameter of a particle-cluster thus condensed is several tens ?m.

Abstract: When a stage on which a wafer is mounted is driven in an X-axis direction by a liner motor, a reaction force of the drive force is generated at a stator and acts on a counterweight via the stator, and thereby the counterweight moves in a direction opposite to the stage in accordance with movement of the stage in the X-axis direction. Accordingly, the reaction force generated by the drive of the stage can substantially be canceled by the movement of the counterweight. Further, since the counterweight has a first section that is connected to the stator, and a second section that is separated from the first section in the X-axis direction and connected to the first section via a connection section, a partition wall of a chamber can be placed using the connected portion as a boundary, and the second section of the counterweight can be located outside the partition wall. Thus, a stage housing space can be set to smaller.

Abstract: Blind devices and related methods for lithography systems are described. An exemplary system has a vacuum chamber with first and second chamber portions. In a member between the chambers is defined an exposure aperture, relative to which a reticle stage in the first chamber portion moves a reticle. A gas enters the first chamber portion and establishes a thermophoretic condition relative to the reticle or portion thereof. A fixed-blind-aperture assembly, movable relative to the exposure aperture and the reticle to exposure and non-exposure positions, defines an illumination aperture through which light from the second chamber portion and gas from the first chamber portion pass when the fixed-blind-aperture assembly is in the exposure position. A gas-passage aperture in the member conducts the gas, passing through the illumination aperture, from the first chamber portion to the second chamber portion when the fixed-blind-aperture assembly is in the non-exposure position.

Abstract: A radiation source includes an anode and a cathode for creating a discharge in a vapor in a space between anode and cathode and to form a plasma of a working vapor so as to generate electromagnetic radiation. The cathode defines a hollow cavity in communication with the discharge region through an aperture that has a substantially annular configuration around a central axis of said radiation source so as to initiate said discharge. A driver vapor is supplied to the cathode cavity and the working vapor is supplied in a region around the central axis in between anode and cathode.

Abstract: There is provided an illumination system for microlithography with wavelengths?193 nm that includes a primary light source, a first optical component, a second optical component, an image plane, and an exit pupil. The first optical component transforms the primary light source into a plurality of secondary light sources that are imaged by the second optical component in the exit pupil. The first optical element and the second optical element are reflective. The first optical component includes a first optical element having a plurality of first raster elements that are imaged into the image plane, producing a plurality of images being superimposed, at least partially, on a field in the image plane. The first optical component includes a collector unit and a second optical element having a plurality of second raster elements.

Abstract: There is provided an illumination system for microlithography with wavelengths ?193 nm. The illumination system includes a primary light source, a first optical component, a second optical component, an image plane, and an exit pupil. The first optical component transforms the primary light source into a plurality of secondary light sources that are imaged by the second optical component in the exit pupil. The first optical component includes a first optical element having a plurality of first raster elements that are imaged into the image plane, producing a plurality of images being superimposed at least partially on a field in the image plane. The second optical component comprises a first optical system that includes at least a third field mirror with positive optical power and a second optical system that includes at least a second field mirror with positive optical power.