Abstract: A gas flow management system may comprise a first and second enclosing walls at least partially surrounding first and second respective spaces; a system generating plasma in the first space, the plasma emitting extreme ultraviolet light; an elongated body restricting flow from the first space to the second space, the body at least partially surrounding a passageway and having a first open end allowing EUV light to enter the passageway from the first space and a second open end allowing EUV light to exit the passageway into the second space, the body shaped to establish a location having a reduced cross-sectional area relative to the first and second ends; and a flow of gas exiting an aperture, the aperture positioned to introduce gas into the passageway at a position between the first end of the body and the location having a reduced cross-sectional area.

Abstract: A lithographic apparatus having an illumination system configured to provide a radiation beam; a support structure configured to support a patterning device, the patterning device being capable of imparting the radiation beam with a pattern in its cross-section, thus providing a patterned radiation beam; a substrate table configured to hold a substrate; a projection system arranged to project the patterned radiation beam onto a target portion of the substrate, and a projection system support configured to support the projection system on a reference frame. The lithographic apparatus further includes a thermal conditioning system configured to thermally condition the projection system support. The invention further relates to a thermal conditioning system constructed and arranged to thermally condition a projection system support. The invention further relates to a device manufacturing method and a method for manufacturing a device.

Abstract: The joint between the projection system element and its support comprises an inorganic layer or a direct bond and is thus liquid tight, which can prevent deformation by an immersion liquid. The joint can be made either warm or cold. Solders, glue, and glue protection can all be used in the formation of this joint. In an embodiment, the elements and its support are made of quartz.

Abstract: An optical element unit is provided comprising an optical element group; a housing receiving said optical element group and having an inner housing part and an exit end; and a purge unit connected to said housing and providing a purge medium to said inner housing part. The optical element group comprises an ultimate optical element. The ultimate optical element is located at the exit end of housing and separates the inner housing part from an environment external to the housing. The ultimate optical element and the housing define a sealing gap. The purge unit provides purge medium to the sealing gap to prevent intrusion of contaminants into the inner housing part.

Abstract: An optical sensor apparatus for use in an extreme ultraviolet lithographic system is disclosed. The apparatus includes an optical sensor comprising a sensor surface and a removal mechanism configured to remove debris from the sensor surface. Accordingly, dose and/or contamination measurements may be carried out conveniently for the lithographic system.

Abstract: A lithographic apparatus is disclosed. The apparatus includes a substrate table constructed to hold a substrate. The substrate table is moveable to transfer the substrate between a substrate measuring position and a substrate processing position. The apparatus also includes a measuring system configured to measure at least one aspect or characteristic of the substrate when the substrate table holds the substrate in the measuring position. The measuring system is configured to direct at least one measuring beam and/or field towards a surface of the substrate. A projection system is configured to project a patterned radiation beam onto a target portion of the substrate when the substrate table holds the substrate in the substrate processing position, and a conditioning system is configured to supply a conditioning fluid to at least part of a path of the measuring beam and/or field of the measuring system to condition the part of the path.

Abstract: An exposure apparatus includes a projection optical system for projecting a pattern of an original onto a substrate, a stage for holding the substrate, a cover for substantially surrounding an exposure light path, from an end portion of the projection optical system, at a side facing the stage, to the stage, a first supply port provided inside the cover, for supplying a purge gas into a space surrounded by the cover, and a first exhaust port provided in an end portion of the cover at a side facing the stage, for exhausting the gas.

Abstract: A lithography apparatus includes a fluid confinement plate which can completely submerge the imaging surface of a substrate. A gap, filled with immersion fluid, is provided between the imaging surface of the substrate and the last optical element of a projection optical system. The fluid confinement plate, which is positioned within the gap between the last optical element and the substrate, is sufficiently sized so that the imaging surface is completely submerged in the immersion fluid. The fluid confinement plate includes a first surface facing the gap and opposing the imaging surface of the substrate. The first surface includes a droplet control element to control the formation of droplets forming on the first surface.

Abstract: A uniformity controller is arranged to control a profile of a radiation intensity along the length of a target portion of a substrate so as to substantially compensate for irradiation-induced variation of the profile with respect to time. The uniformity controller includes a variable filter interposed between the illumination system and the target portion and arranged to control the relative values of the intensity applied at a series of positions within the target portion of the substrate so as to substantially compensate for variation of the profile with respect to time. In this manner the radiation intensity is controlled at a series of positions within the target portion so as to compensate for variation of the intensity profile with time.

Abstract: An immersion lithographic projection apparatus is disclosed in which liquid is provided between a projection system of the apparatus and a substrate. The use of both liquidphobic and liquidphilic layers on various elements of the apparatus is provided to help prevent formation of bubbles in the liquid and to help reduce residue on the elements after being in contact with the liquid.

Abstract: A radiation source comprises an anode and a cathode that are configured and arranged to create a discharge in a gas or vapor in a space between anode and cathode and to form a plasma pinch so as to generate electromagnetic radiation. The gas or vapor may comprise xenon, indium, lithium and/or tin. The radiation source may comprise a plurality of discharge elements, each of which is only used for short intervals, after which another discharge element is selected. The radiation source may also comprise a triggering device, which device can facilitate improving the exact timing of the pinch formation and thus the pulse of EUV radiation. The radiation source may also be constructed to have a low inductance, and operated in a self-triggering regime.

Abstract: A lithographic apparatus is disclosed that includes an optical arrangement having an array of optical elements arranged in a plane perpendicular to the radiation beam. Each optical element comprises an electrical heating device to change an optical path length of the radiation beam. By selectively actuating the electrical heating devices, a position dependent change in optical path length can be achieved in order to correct for irradiation-induced optical path length errors.

Abstract: A rotatable contamination barrier for use with an extreme ultraviolet radiation system includes a blade structure configured to trap contaminant material coming from a radiation source, and an eccentric mass element displaced relative to a central axis of rotation to balance the blade structure when the blade structure is rotated about the central axis.

Abstract: In a liquid-immersion exposure method and a liquid-immersion exposure apparatus, on the basis of a liquid repellency distribution at a surface which an immersion liquid contacts as a result of a movement of a stage, a path where a movement time of the stage becomes the shortest is calculated, so that the stage is moved along this path.

Abstract: The present invention relates to a lithographic apparatus including an illumination system configured to condition a radiation beam; a support constructed to support a first and a second patterning device, each patterning device being capable of imparting the radiation beam with a pattern in its cross-section to form a patterned radiation beam; a substrate table constructed to hold a substrate; and a projection system configured to project the patterned radiation beam onto a target portion of the substrate, wherein the illumination system includes a radiation beam path adaptation device, wherein the adaptation device is configured to adapt a radiation beam path to allow subsequent projections of a pattern of the first patterning device and a pattern of the second patterning device during a single scanning movement of the patterning device support.

Abstract: A lithography system in which a performance criterion of the lithography system is predicted, based on one or more operating conditions of the lithography system, and compared to measurements of that performance criterion. The lithography system may determine from a difference between the measured and predicted performance criterion which, if any, sub-system of the lithography system is not performing as expected.

Abstract: A projection objective provides a light path for a light bundle from an object field in an object plane to an image field in an image plane. The projection objective includes a first mirror (S1), a second mirror (S2), a third mirror (S3), a fourth mirror (S4), a fifth mirror (S5), a sixth mirror (S6), a seventh mirror (S7), and an eighth mirror (S8). The light bundles includes light with a wavelength in a range of 10-30 nm. The light is provided via the eight mirrors, and in the light path exactly one intermediate image of the object field is provided.

Abstract: A lithographic apparatus includes a patterning device for patterning a beam of radiation, a projection system for projecting the patterned beam of radiation onto a substrate, a gas purged sealing aperture extending between different zones of the apparatus, and a gas supply arrangement for supplying a mixture of at least argon and hydrogen to the sealing aperture.

Abstract: When exposing a substrate by projecting a pattern image onto the substrate via a projection optical system (PL) and liquid (1), an exposure method includes a determination of a liquid immersion condition to be performed to the substrate, such as a liquid type, depending on a film (SP) formed as a liquid contact surface of the substrate. The liquid type is selected by switching between a first liquid supply section (11) and a third liquid supply section (21). It is possible to smoothly perform immersion exposure for the substrate (P) on which a different photo-resist layer is provided.

Abstract: An arrangement device including: a photography section, which photographs a first mark and a second mark in a state in which a semiconductor integrated circuit to which the first mark is applied and a member to which the second mark is applied, which member is to be used in combination with the semiconductor integrated circuit, overlap; and a movement section, which relatively moves at least one of the semiconductor integrated circuit and the member with respect to the other thereof on the basis of positions of the first mark and the second mark which have been photographed by the photography section.

Abstract: The disclosure relates to an illumination system for EUV lithography, as well as related elements, systems and methods. In some embodiments, an illumination system includes a first optical element and a second optical element. The first optical element can include a plurality of first facet elements configured so that, when impinged by respective partial beams of radiation, the plurality of first facet elements produce secondary light sources. The second optical element can include a second optical element including a plurality of second facet elements. Each of the plurality of second facet elements can be assigned to at least one of the plurality of first facet elements. The plurality of second facet elements can be configured to be impinged by the radiation via the first optical element.

Abstract: A lithographic apparatus includes an illumination system configured to condition a radiation beam, a projection system configured to project the radiation beam onto a substrate, and a filter system for filtering debris particles out of the radiation beam. The filter system includes a plurality of foils for trapping the debris particles, a support for holding the plurality of foils, and a cooling system having a surface that is arranged to be cooled. The cooling system and the support are positioned with respect to each other such that a gap is formed between the surface of the cooling system and the support. The cooling system is further arranged to inject gas into the gap.

Abstract: In exposing substrate by projecting an image of a pattern onto substrate via projection optical system and liquid, side surface and underside surface of substrate are applied with liquid-repellent treatment. By such a configuration, an exposure method by which when exposing edge areas of the substrate, the exposure can be performed in a condition that a liquid immersion region is formed well and that flowing out of the liquid to the outside of the substrate stage are prevented is provided.

Abstract: Apparatus and methods are disclosed for forming plasma generated EUV light source optical elements, e.g., reflectors comprising MLM stacks employing various binary layer materials and capping layer(s) including single and binary capping layers for utilization in plasma generated EUV light source chambers, particularly where the plasma source material is reactive with one or more of the MLM materials.

Abstract: A soft X-ray microscope includes a table (10); a housing (20) installed to the upper side of the table (10) and having a partition (22); a light source chamber (30) installed lower than the partition (22) of the housing (20) to project a light to liquid jetted under a high pressure to generate plasma; a mirror chamber (40), installed above the partition (22) of the housing (20), in which first and second mirror (410 and 430) are respectively installed to upper and lower sides of a holder (420) for storing a living sample, the soft X-ray generated by the plasma generated in the light source chamber (30) illuminates the living sample, and the soft X-ray penetrated the living sample is amplified to obtain an image in an image capturing chamber; and an image capturing chamber (50) installed to the upper side of the housing (20) to amplify a light image signal amplified through the mirror chamber (40) and to capture the light image on an external screen to allow distinguishing the light image from exterior.

Abstract: This exposure system projects a pattern image onto a substrate via a projection optical system and a liquid to expose the substrate, with a space between the projection optical system and the substrate filled with the liquid. The exposure system is provided with a vaporization preventing unit for preventing the vaporization of the liquid.

Abstract: Projection-optical systems are disclosed that have a large image-side NA of, e.g., ?0.45, and that allow inspection for surface-shape errors of reflecting surfaces with prescribed precision. A first reflective image-forming optical system forms an intermediate image of a first surface. A second reflective image-forming optical system forms a reduced image, on a second surface, of the intermediate image. The first reflective image-forming optical system has a first concave mirror, a second convex mirror, a third mirror, and a fourth concave mirror. The second reflective image-forming optical system has a fifth concave mirror, a sixth mirror, a seventh convex mirror, and an eighth concave mirror. If the absolute value of the center radius of curvature of the reflective surface of the second mirror is RM2, and the maximum object height on the first surface is H0, then the condition 1<RM2/H0<6 is satisfied.

Abstract: An exposure apparatus includes an illumination optical system that includes an optical integrator for forming a secondary light source from the light, and a variable stop arranged at or near a position where the secondary light source is formed, the diameter variable stop that defines a NA of the illumination optical system, a projection optical system that includes an aperture stop arranged at a position substantially optically conjugate with the variable stop, the aperture stop defining a numerical aperture of the projection optical system, and a controller for controlling the aperture diameter of the variable stop as the aperture diameter varies so that an image of the secondary light source can fall within the aperture diameter of the aperture stop.

Abstract: Provided are a method and system for determining states of spatial light modulator (SLM) pixels in a lithography system configured to print a desired pattern. The method includes determining diffraction orders associated with an ideal mask of a pattern to be printed by the lithography system, and then configuring the states of the SLM pixels to match all the diffraction orders that are relevant in the image formation.

Abstract: A lithographic apparatus includes a collector configured to collect radiation from a radiation source, the collector including a plurality of shells forming separate compartments, and a cleaning arrangement including a gas inlet and a gas outlet, the cleaning arrangement being configured to clean surfaces of the plurality of shells by guiding a gas flow from the inlet through the compartments to the outlet. The cleaning arrangement includes a distribution system configured to divide the gas flow into several sub flows, each of the sub flows corresponding to one or more of the compartments, and a control system configured to control the relative amount of the sub flows.

Abstract: A lithographic apparatus, comprising a collector being constructed to receive radiation from a radiation source and transmit radiation to an illumination system, wherein the collector is provided with at least one fluid duct, the apparatus including a temperature conditioner to thermally condition the collector utilizing the fluid duct of the collector, the temperature conditioner being configured to feed a first fluid to the fluid duct during a first period, and to feed a second fluid to the fluid duct during at least a second period.

Abstract: The invention relates to a method for preventing contamination on the surfaces of optical elements comprising a multi-layer system, during the exposure thereof to radiation at signal wave lengths in an evacuated closed system comprising a residual gas atmosphere, whereby the photocurrent generated by means of photo emission from the radiated surface of the multi-layer system is measured. The photocurrent is used to regulate the gas composition of the residual gas. The gas composition is altered according to at least one lower and one upper threshold value of the photocurrent. The invention also relates to a device for regulating the contamination on the surface of at least one optical element during exposure and an EUV-lithographic device and a method for cleaning the surfaces of the optical elements contaminated by carbon.

Abstract: The invention relates to microlithography and can be used, for instance for producing integrated circuits or structures having a sub-micron resolution. An image is produced with the aid of the stepped displacement, including continuous displacement of the radiator matrix(es) and/or a material sensitive to a used radiation at a step which is less than d. The diameter of the radiation flux at the output of each radiator is less than 100 nm. The sizes of the radiator matrixes can be equal to or greater than an image size. The displacements are carried out at distances which are equal or less than a maximum center-to-center distance of two adjacent radiators. A matrix of waveguides which are connected to at least one radiation source and made of fibre-optic waveguides having thinned ends or embodied in the form of microcones made of a material which is transparent for the used radiation is used as the radiator matrix. An emissive emitter matrix can also be used in the form of said radiator matrix.

Abstract: There is provided a collector. The collector includes a first mirror shell positioned inside a second mirror shell that has a chamfered end.

Abstract: A method of optimizing adjustable settings of adjustable elements of a projection system in a lithographic apparatus is disclosed that includes determining an object spectrum for a pattern and an illumination arrangement, determining a symmetry of the object spectrum, constructing a merit function for a wavefront in a pupil plane of the projection system with the settings of the adjustable elements as variables with reference to the symmetry, and optimizing the merit function.

Abstract: Systems and methods for controlling ambient pressure during processing of microfeature workpieces, including during immersion lithography, are disclosed. A system in accordance with one embodiment includes a support configured to carry a microfeature workpiece with a surface of the microfeature workpiece at a support location, and a liquid supply device positioned proximate to the support to dispense liquid at the surface location. The system can further include a generally gas-tight enclosure disposed around at least a portion of the surface location. The enclosure can be coupleable to a vacuum source and can be configured to withstand an internal pressure less than atmospheric pressure. This arrangement can be used in the context of an immersion photolithography system, or other systems for which a liquid is disposed on the surface of the microfeature workpiece.

Abstract: An EUV exposure apparatus is configured to maintain the reflective index of the optical element as high as possible and to minimize the maintenance frequency of the optical element by restraining attachments of released gas particles by degasifying to the optical element. An exposure apparatus is configured to expose a pattern of an original on a substrate by using extreme ultraviolet light. The exposure apparatus includes an optical element configured to receive the extreme ultraviolet light, a barrel configured to support the optical element, a chamber configured to store the barrel, and a partition wall configured outside and around an optical path of the extreme ultraviolet light in the barrel.

Abstract: A rotatable contamination barrier is disclosed that has a plurality of closely packed blades configured to trap contaminant material coming from a radiation source. The blades are radially oriented relative to a central rotation axis of the contamination barrier. The blades comprise a metal compound having crystals oriented generally radially relative to the central rotation axis.

Abstract: The charged particle beams is provided, which can analyze contamination of the inner wall of the system without being disassembled and supply information on appropriate maintenance timing. The contamination level of the inner wall of the system is identified by measuring the spectrum of the X-rays emitted from the inner wall due to irradiation of a charged particle beam or a recoil electron.

Abstract: A projection lens for imaging a pattern arranged in an object plane onto an image plane using electromagnetic radiation from the extreme-ultraviolet (EUV) spectral region has several imaging mirrors between its object plane and image plane that define an optical axis of the projection lens and have reflective coatings. At least one of those mirrors has a graded reflective coating that has a film-thickness gradient that is rotationally symmetric with respect to a coating axis, where that coating axis is acentrically arranged with respect to the optical axis of the projection lens. Providing at least one acentric, graded, reflective coating allows designing projection lenses that allow highly uniform field illumination, combined with high total transmittance.

Abstract: There is provided an illumination system. the illumination system includes (a) a source of light having a wavelength of less than or equal to 193 nm, and (b) an optical element in a path of the light, having a first raster element, a second raster element, a third raster element and a fourth raster element situated thereon. The second raster element is adjacent to the first raster element, and located a first distance from the first raster element. The fourth raster element is adjacent to the third raster element, and located a second distance from the third raster element. The second distance is different from the first distance.

Abstract: A lithographic system combining an interference exposure unit and a lithography unit. The lithography unit can comprise an array of individually controllable elements. The lithography system can be arranged such that a pitch of the lines exposed by the interference exposure unit is an integer multiple of a size of an exposure area of the lithography unit corresponding to a single individually controllable element.

Abstract: An immersion lithography apparatus includes a liquid supply system configured to supply a liquid to a space through which a beam of radiation passes, the liquid having an optical property that can be tuned by a tuner. The space may be located between the projection system and the substrate. The tuner is arranged to adjust one or more properties of the liquid such as the shape, composition, refractive index and/or absorptivity as a function of space and/or time in order to change the imaging performance of the lithography apparatus.

Abstract: A method to measure the height-direction position of a mask M in an exposure device having a function to irradiate the mask M with light emitted from a light source and transfer a pattern formed on the mask M onto a photosensitive substrate such as a wafer by a projection optical system, a mask surface height-direction position measurement method characterized by moving, before measuring the height-direction position of the mask M, an exposure area defining member 1 which is arranged between the mask M and the projection optical system and defines an exposure area at the time of exposure.

Abstract: An exposure apparatus projects a pattern image onto a substrate via a projection optical system and a liquid, and the projection optical system has an optical member that comes into contact with the liquid and an optical group arranged between the optical member and a reticle. A holding mechanism that holds the optical member and the optical group holds the optical member so that it is movable relative to the optical group.

Abstract: An X-ray generator for generating plasma and X-ray emitted from the plasma includes a unit for generating the plasma, and plural reflection optical systems for introducing the X-ray through different optical paths.

Abstract: A method of manufacturing a projection objective (22) of a microlithographic projection exposure apparatus (10). The projection objective (22) comprises at least one mirror (M1 to M6) that each have a mirror support (241 to 246) and a reflective coating (26) applied thereon. First imaging aberrations of a pre-assembled projection objective are measured. Before the coating (26) is applied, the mirror supports (241 to 246) are provided with a desired surface deformation (34). If the mirrors (M1 to M6) are not reflective for projection light without the coating (26), measuring light is used that has another wavelength. Alternatively, two identical mirror supports (246) may be provided. One support having a reflective coating is part of the pre-assembled projection objective whose imaging aberrations are measured. The other support is provided with surface deformations before coating and mounting the support into the objective.

Abstract: Provided is a radiation distribution system for distributing the radiation from an illumination system to two or more patterning means, each for patterning beams of radiation, which are subsequently projected onto a substrate.

Abstract: There is provided an optical component. The optical component includes a material having a surface that heats to a maximum temperature (Tmax) when subjected to radiation. The material has a temperature-dependent coefficient of thermal expansion (?(T)) of about zero at a temperature T0 that is approximately equal to Tmax. The optical component is suitable for use in any of an illumination system, a projection objective or a projection exposure system, as employed, for example, for EUV microlithography.

Abstract: Titania-containing silica glass bodies and extreme ultraviolet elements having low levels of striae are disclosed. Methods and apparatus for manufacturing and measuring striae in glass elements and extreme ultraviolet elements are also disclosed.