Abstract: A method is described for using computer aided design data for contact holes in a background, such as an opaque background or a phase shifting background, to generate computer aided design data for fabricating a mask an outrigger pattern. The outrigger pattern mask has contact holes surrounded by a first border of opaque material and the first border of opaque material surrounded by a third border of attenuating or 100% transmittance phase shifting material. The third border of attenuating or 100% transmittance phase shifting material is surrounded by opaque material. The design data for the contact hole pattern, a background pattern, a first correction pattern, and a second correction pattern are combined in a computer processor to generate final data. The final data is used to fabricate the mask.

Abstract: In one aspect, the invention encompasses a method of manufacturing a stencil mask comprising: a) defining a plurality of opening locations within a substrate; b) providing a dopant within the substrate, the dopant being provided in a pattern to form a plurality of first regions doped to a concentration with a dopant and one or more second regions not doped to the concentration with the dopant, individual first regions surrounding individual opening locations; c) forming a plurality of openings within the opening locations, the individual openings extending into the substrate; and d) forming a stencil mask from the substrate having the openings extending therein.

Abstract: A passivating layer (220) is formed overlying portions of a mask (200). The mask (200) is used to pattern a semiconductor device substrate (62). In accordance with one embodiment of the present invention, the passivating layer (220) is removed prior to patterning the semiconductor device substrate (62). In yet another embodiment, the passivating layer (220) is cleaned prior to patterning the semiconductor device substrate (62) and then left to remain overlying portions of the mask (200) during the patterning process.

Abstract: A gas (air) beating in a ceramic body is made using a separate restriction member to define the air restriction feature. The separate member may be a metal bushing in which an insert is fitted, the insert having an opening defining the actual restriction feature. Alternatively the separate member may be a ceramic plate with restriction features machined by laser or abrasion before or after attachment to the main body.

Abstract: The present invention is directed to the production of high quality semi-conductor devices created at speeds and in sizes that far exceed current x-ray lithography capabilities.

Abstract: An X-ray exposure apparatus comprises an X-ray mirror containing a material having an absorption edge only in at least either one of a wavelength region of less than 0.45 nm and a wavelength region exceeding 0.7 nm as to X-rays.

Abstract: An exposure method for printing a pattern onto a workpiece to be exposed, includes a first exposure step for forming, on the workpiece and by exposure, a transferred image of a first absorbing material pattern formed on a mask and having no periodic structure, and a second exposure step for printing, on the workpiece and by exposure, a diffraction pattern to be produced through Fresnel diffraction due to a second absorbing material pattern formed on the mask and having a periodic structure, the diffraction pattern having a period corresponding to 1/n of a period of the transferred image of the periodic structure pattern, where n is an integer not less than 2, and wherein the first and second exposure steps are performed simultaneously.

Abstract: An X-ray absorber is deposited on a membrane. A stress adjust step is applied so that the average film stress of the X-ray absorber is 0. After patterning the X-ray absorber, the position accuracy of the pattern is measured. Then, a stress adjust process is applied to the patterned X-ray mask. Accordingly, a stress adjustment method is used to acquire an X-ray mask that has no pattern position offset of the X-ray absorber.

Abstract: Parallelism of a pellicle membrane surface of a pellicle 11 and a mask surface is adjusted and secured during light exposure. A light exposure apparatus is characterized in that it is provided with a mask holding part 8 and a pellicle holding part 9 or a pellicle supporting part. As another means, in a pellicle for lithography utilizing a glass plate as a pellicle membrane, the glass plate is formed beforehand to have warpage and adhered on a pellicle frame so that a convex surface of the glass plate should become an upper surface. A pellicle in which a glass plate is adhered to a preliminarily deformed pellicle frame on which the glass plate is to be placed, so that the glass plate should be given tension by stress obtained by resilience of the pellicle frame, and a pellicle in which a space surrounded by a pellicle comprising a glass plate and a pellicle frame and a photomask is decompressed. According to the present invention, resolution of lithography utilizing a pellicle is improved.

Abstract: A reduction objective, a projection exposure apparatus with a reduction objective, and a method of use thereof are disclosed. The reduction objective comprises four (primary, secondary, tertiary, and quaternary) mirrors in centered arrangement with respect to an optical axis. The primary mirror is a convex mirror and the second mirror has a positive angular magnification. The reduction objective has an obscuration-free light path and is suitable for annular field scanning operation, such as is used in soft X-ray, i.e. and EUV and UV, lithography.

Abstract: Generally known conventional X-ray tubes include a window opening which is covered by an X-ray transparent X-ray window which is usually made of beryllium. A significant absorption of X-rays of comparatively long wavelength, for example of the order of magnitude of from 1 nm to 10 nm, occurs in such windows. According to the invention, a bundle of X-ray conducting capillary tubes (46) is connected to the window opening of the X-ray tube, the other end (48) of the bundle being provided with a very thin X-ray window (50) which seals the interior of the capillary tubes (46), being in vacuum contact with the vacuum space of the X-ray tube, from the environment in a vacuum tight manner.

Abstract: A chuck for holding a reflective reticle where the chuck has an insulator block with a non-planer surface contoured to cause distortion correction of EUV radiation is provided. Upon being placed on the chuck, a thin, pliable reflective reticle will conform to the contour of the chuck's non-planer surface. When employed in a scanning photolithography system, distortion in the scanned direction is corrected.

Abstract: A photolithography system that employs a condenser that includes a series of aspheric mirrors on one side of a small, incoherent source of radiation producing a series of beams is provided. Each aspheric mirror images the quasi point source into a curved line segment. A relatively small arc of the ring image is needed by the camera; all of the beams are so manipulated that they all fall onto this same arc needed by the camera. Also, all of the beams are aimed through the camera's virtual entrance pupil. The condenser includes a correcting mirror for reshaping a beam segment which improves the overall system efficiency. The condenser efficiently fills the larger radius ringfield created by today's advanced camera designs. The system further includes (i) means for adjusting the intensity profile at the camera's entrance pupil or (ii) means for partially shielding the illumination imaging onto the mask or wafer.

Abstract: An X-ray optical system includes an X-ray illumination system having at least two mirrors, a driving system for moving the at least two mirrors, a detecting system having at least one sensor, for detecting at least one of tilt and incidence position of X-rays in the X-ray illumination system, and a control system for controlling movements of the at least two mirrors by the driving system on the basis of detection by the detecting system.

Abstract: Condenser system for use with a ringfield camera in projection lithography where the condenser includes a series of segments of a parent aspheric mirror having one foci at a quasi-point source of radiation and the other foci at the radius of a ringfield have all but one or all of their beams translated and rotated by sets of mirrors such that all of the beams pass through the real entrance pupil of a ringfield camera about one of the beams and fall onto the ringfield radius as a coincident image as an arc of the ringfield. The condenser has a set of correcting mirrors with one of the correcting mirrors of each set, or a mirror that is common to said sets of mirrors, from which the radiation emanates, is a concave mirror that is positioned to shape a beam segment having a chord angle of about 25 to 85 degrees into a second beam segment having a chord angle of about 0 to 60 degrees.

Abstract: An X-ray mask which is provided with an alignment mark and a transfer circuit pattern having a high position accuracy can be manufactured through a simplified manufacturing process. A membrane allowing passage of X-rays is formed on a substrate. A X-ray absorber intercepting transmission of X-rays is formed on the membrane. The substrate includes a window exposing the membrane. The X-ray absorber includes a transfer circuit pattern and an alignment mark formed in a region not overlapping with the window in a plan view.

Abstract: An X-ray mask including (a) an X-ray permeable membrane and (b) an X-ray absorber formed in a pattern on the X-ray permeable membrane. The X-ray absorber is composed of an alloy having one of the following groups: (a) tantalum (Ta), ruthenium (Ru), and germanium (Ge); (b) tantalum (Ta), ruthenium (Ru), and silicon (Si); (c) rhenium (Re) and germanium (Ge); and (d) tungsten (W) and germanium (Ge). The X-ray mask provides advantageous features, such as having high ability for absorbing X-ray therein, possible reproduction of a thin film having low stress and having a densified crystal structure.

Abstract: An illumination source or condenser used to project the image of a reticle onto a photosensitive substrate used in photolithography having a first reflective fly's eye, faceted mirror, or mirror array with predeterminedly positioned facets or elements and a second reflective fly's eye, faceted mirror, or mirror array having predeterminedly positioned facets or elements for creating a desired radiant intensity, pupil fill, or angular distribution. A source of extreme ultraviolet electromagnetic radiation is provided to a first fly's eye or mirror array with arcuate shaped facets or elements. The arcuate shaped facets or elements are positioned to create an image of the source at corresponding facet in a second reflective fly's eye or mirror array. A desired shape and irradiance together with a desired radiant intensity, pupil fill, or angular distribution is obtained. An arcuate illumination field or image is formed with high efficiency in a compact package.

Abstract: In the invention a pellicle mounting structural principle is provided whereby a membrane for protection of an X-ray mask is interchangeably positioned with proper spacing between the X-ray mask and the resist on the wafer in which the pattern produced by the X-ray exposure is to be formed. The mounting principle employs a combined assembly of, a membrane and spacer member subassembly together with a means for seectably separable retention to the supporting structural portion of the mask The principle accommodates membrane materials that may not be flexible and provides an ability to remove the membrane for cleaning or replacement and to removal and reassembly with ease in reestablishing the spacing with respect to the mask. The means for the selectably separable retention to the supporting structural portion of the mask involves the use of springs and elastomers, securing to the sides of the supporting structural mask ring and the bonding of the spacer member directly to the mask.

Abstract: An X-ray mask including a transfer pattern having high accuracy is obtained. In a method of manufacturing the X-ray mask, an X-ray absorber film preventing transmission of an X-ray is formed on a substrate. A resist film is formed on the X-ray absorber film. The substrate is placed on a movable member. Steps of moving the movable member and irradiating the resist film with an energy beam are repeated for carrying out a drawing step of drawing a pattern on the resist film. Between the step of placing the substrate on the movable member and the drawing step, a step of holding a mask member including the resist film, the X-ray absorber film and the substrate to be in a state substantially identical to thermal equilibrium in the drawing step is carried out.

Abstract: A method of extracting data of at least one aperture mask pattern from design data which includes write-required patterns and repeating units, so that boundary lines of the at least one aperture mask pattern are different from boundary lines of the repeating unit on the design data and so that the at least one aperture mask pattern completely includes at least one of the write-required patterns without partially or incompletely including the write-required pattern.

Abstract: A method for integrating correction features onto selected design features of an integrated circuit mask. The method includes identifying a minimum dimension in the integrated circuit mask. The minimum dimension is configured to define transistor gate electrode features or any critical feature geometry. The method then includes removing feature geometries that are dimensionally larger than the minimum dimension. After the removing operation, correction features are integrated with selected ends of the transistor electrode features that have the minimum dimension to produce corrected transistor gate electrode features. Then, the method includes the operation of adding the corrected transistor gate electrode features to the removed feature geometries that are dimensionally larger than the minimum dimension to produce a corrected integrated circuit mask.

Abstract: A reflective lithography mask (12) including a substrate (40); a reflective coating (42); a plurality of absorbing blocks (44) covering certain regions of the reflective coating (42) in a manner corresponding to a desired circuit pattern; and a plurality of buffer blocks (46) situated between the covered regions of the reflective coating and the absorbing blocks. The buffer blocks (46) are made of an electrically conducting material, such as carbon in graphite form; tin oxide (and materials based on this compound) and/or indium oxide (and materials based on this compound). Since the buffer material is electrically conducting, rather than insulating, the risk of electrostatic discharge damage is reduced.

Abstract: A method for manufacturing a semiconductor device includes the steps of preparing an exposure mask in which repeat pattern portions obtained by repeatedly arranging the same pattern and non-repeat pattern portions are separately formed in a plurality of regions of one exposure mask and phase shifters for changing a phase of illumination light are provided in at least part of the repeat pattern portions, preparing a semiconductor wafer having a plurality of chip areas, aligning a pattern of one of the plurality of regions of the exposure mask with each of the plurality of chip areas on the semiconductor wafer, effecting an exposing process in an illuminating condition corresponding to the pattern of the above one region, aligning the pattern of a different one of the plurality of regions on the exposure mask with each of the plurality of chip areas on the semiconductor wafer, and effecting an exposing process in an illuminating condition corresponding to the pattern of the different one region, wherein the ste

Abstract: A shading film of chrome is formed entirely on one surface of a circular substrate of quartz. The substrate is rotated and resist is applied to the shading film. Since the substrate is shaped in a circle, the resist spreads uniformly on the entire surface of the shading film by the centrifugal force. Therefore, the resist has a substantially uniform film thickness over almost the entire surface of the shading film. This resist is patterned to form a resist pattern. By etching the shading film with the resist pattern used as a mask, a pattern preferable in accuracy of dimensions can be formed.

Abstract: In a mask holder for supporting a transfer mask which includes a thin-film portion having an aperture pattern forming region and a supporting frame portion for supporting the thin-film portion, the mask holder contacts with the thin-film portion except for the aperture pattern forming region.

Abstract: In electron beam lithography, a lithography system uses multiple microcolumns in an array to increase throughput for direct writing of semiconductor wafers. The mismatch between the microcolumn array and the semiconductor die periodicity is resolved by using only one microcolumn to scan each individual die. This is accomplished by assuring that the stage carrying the semiconductor wafer moves a total distance in each of the X and Y directions which is greater than the pitch between adjacent die. Hence each die is scanned by only a single microcolumn although at possibly different times during the total stage motion.

Abstract: An exposure method including the steps of providing a wafer and a mask having a membrane and a pattern formed thereon, arranging the mask and the wafer opposite to each other, obtaining information corresponding to deformation of the membrane of the mask, reducing the influence of the deformation of the membrane, and transferring the pattern of the mask to the wafer by exposing the mask to radiant energy. Also disclosed is an exposure device for performing this exposure method.

Abstract: A surface of a silicon carbide film which is an x-ray membrane 12 is made so that the surface roughness thereof may be 1.0 nm or less in terms of Ra (center-line average roughness) and the surface may have no scratch of 0.25 .mu.m or more in width. The surface of the silicon carbide film, which is the x-ray membrane 12 is polished a diamond particle, of a predetermined particle diameter, and colloidal silica dispersed in a solution containing hydrogen peroxide as an abrasive material, so that the surface is highly precise.

Abstract: An X-ray mask blank makes it possible to manufacture an X-ray mask which has an extremely low stress, thus providing an extremely high positional accuracy. In the X-ray mask blank, an X-ray transparent film is formed on a substrate, and an X-ray absorber film is formed on the X-ray transparent film. The top and/or the bottom of the X-ray absorber film is provided with a film in which the product of the film stress and the film thickness thereof lies in the range of 0 to .+-.1.times.10.sup.4 dyn/cm.

Abstract: A reflective element for extreme ultraviolet semiconductor lithography systems substantially minimizes the phase transitions of reflected extreme ultraviolet light by a reflective multilayer coating on an extremely planar surface which is parallel to a family of (111) crystallographic planes of a single crystal silicon wafer. The extremely planar surface is made by using three of the families of (111) crystallographic planes of the single crystal silicon as etch barriers for anisotropic etchants.

Abstract: An X-ray mask includes a holding frame, a membrane held by the holding frame, a pattern formed on a surface of the membrane by an X-ray absorptive material, the surface being disposed opposed to a workpiece to which the pattern is to be transferred when the mask is mounted in an exposure apparatus, a member for reinforcing the holding frame and having a portion placed closer to the workpiece than to the membrane and a pellicle provided at a side where the pattern is formed, the pellicle being attached to the portion of the member so that the pellicle is placed at the workpiece side of the membrane.

Abstract: A mask holding system includes a chucking mechanism for holding a mask structure including a frame and a mask substrate having a rectangular window with a mask pattern, and a load mechanism for applying, at a position along an extension of a diagonal of the rectangular window, a load to the frame in a direction along the plane of the mask, whereby the mask pattern can be distorted isotropically with the application of the load along the mask plane.

Abstract: On a support frame of Si, an X-ray transmissive layer of SiC or so forth is formed. On the X-ray transmissive film, a predetermined pattern of X-ray absorber of an oxide, such as TaO or so forth is formed.

Abstract: According to the preferred embodiment, a method is provided for automatically coloring VLSI design elements for the purpose of assigning binary properties to the elements. The preferred method is particularly applicable for use generating phase shift mask designs from VLSI CAD datasets. The preferred method uses net coloring to automatically generate a data set of colored elements. The preferred method is not dependent on the order in which the elements are operated upon. The preferred method has the additional advantage of being able to automatically detect conflicts that prevent the VLSI design from being optimally colored. The preferred method is equally applicable to hierarchical VLSI databases with nested components and traditional flat databases. When applied the hierarchical databases, the preferred method provides element coloring with minimal data flattening required.

Abstract: An X-ray reduction exposure apparatus which provides a preferable image forming system in an entire mask surface area of a reflection type mask, can reduce curvature of the field and astigmatism of the transfer image even in scan exposure and, therefore, can obtain high transfer precision, and the apparatus contributes to the manufacture of a semiconductor element having high reliability. The X-ray reduction exposure apparatus has, as a characteristic feature, a drive mechanism for driving a mask scan stage substantially along the curvature surface of the mask. This drive mechanism is constituted by a main drive section (linear motor or the like) linearly driven in a direction corresponding to the moving direction of a mask scan stage and a sub-drive section (actuator or the like) driven perpendicularly to the drive direction, otherwise, constituted by a main drive section and a guide having a shape which is the same as the curvature surface shape of the mask.

Abstract: A method of fabricating an X-ray mask including forming a membrane layer on a wafer and forming a layer of X-ray absorbing material on the membrane layer. A pattern is defined on the absorbing layer with positions that are predistorted in accordance with the following equations, and their extensions if desired:.DELTA.Y=M.sub.y Y+.delta.Y.DELTA.X=M.sub.x X+.delta.Xwhere:M.sub.y and M.sub.x are the X and Y magnification errors;.delta.Y includes the terms .alpha.X.sup.4 +.beta.X.sup.2 +.gamma. where,.alpha. includes the terms a.sub.1 Y.sup.3 +a.sub.2 Y.beta. includes the terms a.sub.3 Y.sup.3 +a.sub.4 Y.gamma. includes the terms a.sub.5 Y.sup.3 +a.sub.6 Y;and with corresponding equations for .delta.X. The pattern is then formed in the absorbing layer to form an X-ray mask.

Abstract: A fabrication process for a mask used in exposure processes using x-rays, which includes first forming and patterning an absorber, and then forming a membrane over it. The fabrication process can avoid the use of a selective etching process on the absorber and the membrane. The mask, according to the invention, can prevent transferred pattern misalignment or displacement or misplacement, and exposure to secondary electrons as well.

Abstract: Inspection of objects such as X-ray lithography masks is carried out by passing X-rays or extreme ultraviolet light through an object which absorbs in a pattern to provide a patterned X-ray or ultraviolet image which is then directed to a converter. The converter converts the image incident upon it to an image formed by electrons emitted from the converter. The emitted electrons are magnified in an electron microscope and the magnified electron image is displayed by the electron microscope. The visible image may be further digitized and processed by a computer, including long-term storage or display on a computer monitor. X-ray lithography masks may be inspected by passing X-rays through masks of the same type that will be used for lithography so that the magnified image of the X-rays passed through the masks corresponds to the pattern of X-rays that will be incident on a photoresist, allowing accurate inspection of X-ray masks before use.

Abstract: An X-ray mask blank and a manufacturing method for an X-ray mask make it possible to manufacture an X-ray mask which has an extremely low stress, thus providing an extremely high positional accuracy. In the X-ray mask blank, an X-ray transparent film is formed on a substrate, and an X-ray absorber film is formed on the X-ray transparent film. An etching mask layer composed of a material containing chromium and carbon, and/or nitrogen is provided on the X-ray absorber film.

Abstract: A scanning exposure method includes steps of relatively scanning a mask and a wafer relative to exposure light of a slit beam, to transfer a pattern of the mask onto the wafer and applying a relative speed between the mask and the wafer in a scan direction, during the scan exposure in one shot area, wherein the relative speed is changed in accordance with thermal distortion of the mask pattern caused during the scan exposure.

Abstract: Disclosed is a method comprising the step of checking a defect on a surface of a thin film formed by a step or steps of forming the thin film to be an x-ray membrane 12, wherein the thin film is formed by the thin film forming step or steps so that the thin film checked by the defect checking step may have a surface roughness of 1.0 nm or less in terms of Ra (center-line average roughness).

Abstract: A reflective element for extreme ultraviolet semiconductor lithography systems substantially minimizes the phase transitions of reflected extreme ultraviolet light by a reflective multilayer coating on an extremely planar surface which is parallel to a family of (111) crystallographic planes of a single crystal silicon wafer. The extremely planar surface is made by using three of the families of (111) crystallographic planes of the single crystal silicon as etch barriers for anisotropic etchants.

Abstract: Disclosed are X-ray masks exhibiting improved stability and reliability of the X-ray masks, and methods of making these masks. The X-ray masks include a membrane, an X-ray absorber pattern on the membrane, which is formed on a top side of a substrate, or an oxide layer between the membrane and the X-ray absorber pattern.

Abstract: A universal mask for use in making Integrated Circuits. The individual size masks are produced on a wafer having standardized, large size membrane area. A combined X-ray blocking and membrane stiffening layer is applied on at least one side of the wafer. This stiffening/blocking layer includes an X-ray transparent region having a size commensurate with the desired exposure field and aligned therewith.

Abstract: X-ray absorber in an X-ray mask and a method for manufacturing the same which includes a first layer of crystalline phase formed on a predetermined portion of the surface of a membrane and a second layer of amorphous phase formed on the first layer.

Abstract: Integrated circuit designs are continually shrinking in size. Lithographic processes are used to transfer these designs to a semiconductor substrate. These processes typically require that the exposure wavelength of light be shorter than the smallest dimension of the elements within the circuit design. When this is not the case, exposure energy such as light behaves more like a wave than a particle. Additionally, mask manufacturing, photoresist chemical diffusion, and etch effects cause pattern transfer distortions. The result is that circuit elements do not print as designed. To counter this effect the circuit designs themselves can be altered so that the final printed results better matches the initial desired design. The process of altering designs in this way is called Lithographic Proximity Correction (LPC). Square (142), cross (162), octagon (172), and hammerhead (202) serifs are added to integrated circuit designs by shape manipulation functions to perform two dimensional (2-D) LPC.

Abstract: Methods for manufacturing mask substrates usable to make masks for use with charged particle beam or X-ray microlithography. Such masks have supports that are formed to have a minimum required width. The method involves forming a planar laminate of a membrane layer (destined to be the membrane of the mask), an etch-stopper layer, and a support-forming silicon layer. An etch-resistant layer is applied to the silicon layer, and a support-defining pattern is imposed on the etch-resistant layer by, e.g., a microlithographic technique. The resulting exposed portions of the silicon layer are removed by anisotropic dry etching (preferably plasma-enhanced dry etching at extremely low temperature or in the presence of a side-wall protective gas). The dry etching continues until the etch-stopper layer is reached. The resulting mask substrate has well defined supports with side walls perpendicular to the plane of the membrane.

Abstract: A mask for a semiconductor device includes a frame having an opening therein, a membrane film formed on the frame, and a patterned light shield formed on the membrane via an interlayer. To form the mask, an interlayer is formed on a first silicon layer, and a second silicon layer is formed on the interlayer. The second silicon layer is selectively etched to thereby form a plurality of openings therethrough, and a light shield is formed in a corresponding one of the openings. The remaining second silicon layer is removed, and a predetermined region of the first silicon layer is etched to expose the interlayer therethrough. A membrane film is formed on an entire lower surface of the resultant structure, and a predetermined region of the interlayer is etched to expose a predetermined region of the membrane film.

Abstract: A reflection type X-ray mask structure includes an X-ray absorptive material pattern, an X-ray reflective multilayered film for reflecting X-rays, and a supporting substrate for supporting the X-ray reflective multilayered film, wherein an X-ray reflectivity of a portion other than a pattern region is lower than that of the pattern region. With this reflection type X-ray mask structure, step-and-repeat exposure or step-and-scan exposure with a semiconductor exposure apparatus does not cause undesirable multiple exposure at a boundary portion between juxtaposed exposure regions on a wafer.