Binary Compound (e.g., Boride, Etc.) Patents (Class 423/289)
  • Publication number: 20100157437
    Abstract: Embodiments of the invention described herein include metamaterials that exhibit negative permittivity and negative permeability at optical frequencies, methods for preparing such materials, and devices prepared from same.
    Type: Application
    Filed: November 25, 2009
    Publication date: June 24, 2010
    Applicant: TRITON SYSTEMS, INC.
    Inventors: Keith A. Higginson, Alkim Akyurtlu, Adil-Gerai Kussow
  • Patent number: 7668578
    Abstract: A solid structure includes a substrate and a layer located on a surface of the substrate. The layer includes crystalline or polycrystalline MgB2.
    Type: Grant
    Filed: December 2, 2004
    Date of Patent: February 23, 2010
    Assignee: Alcatel-Lucent USA Inc.
    Inventors: Sang-Wook Cheong, Namjung Hur
  • Patent number: 7645308
    Abstract: Osmium, when combined with boron alone, or in combination with rhenium, ruthenium or iron, produces compounds that are ultra-hard and incompressible. These osmium diboride compounds are useful as a substitute to for other super or ultra-hard materials that are used in cutting tools and as abrasives. The osmium diboride compounds have the formula OsxM1-xB2 where M is rhenium, ruthenium or iron and x is from 0.01 to 1, except when x is not 1 and M is rhenium, x is from 0.01 to 0.3.
    Type: Grant
    Filed: May 10, 2005
    Date of Patent: January 12, 2010
    Assignee: The Regents of the University of California
    Inventors: Richard B. Kaner, John J. Gilman
  • Publication number: 20090274897
    Abstract: Described herein are rhenium boride compounds having desirable characteristics for a variety of applications, ranging from abrasives and cutting tools to protective coatings.
    Type: Application
    Filed: April 15, 2009
    Publication date: November 5, 2009
    Inventors: Richard B. Kaner, Sarah H. Tolbert, Abby Kavner, Jenn-Ming Yang, Michelle B. Weinberger, Robert W. Cumberland, John J. Gilman, Hsiu-Ying Chung, Jonathan B. Levine
  • Patent number: 7541013
    Abstract: The present invention relates to a method for manufacturing a transition metal boride powder. The method for manufacturing a transition metal boride powder includes: i) manufacturing a mixed powder by mixing a transition metal halogenide powder and an alkali metal borohydride powder; ii) charging the mixed powder and a plurality of balls into a reaction vessel; iii) charging an inert gas into the reaction vessel and sealing the reaction vessel; iv) high energy ball milling the mixed powder and manufacturing a composite powder containing a transition metal boride and an alkali metal halogenide; v) washing the composite powder in water, dissolving the alkali metal halogenide in the water and filtering the transition metal borides; and vi) drying the filtered transition metal boride and collecting the transition metal boride powder.
    Type: Grant
    Filed: March 21, 2008
    Date of Patent: June 2, 2009
    Assignee: Korea Institute of Science and Technology
    Inventors: Jae-Hyeok Shim, Ji-Woo Kim, Young-Whan Cho
  • Patent number: 7540892
    Abstract: A system for generating hydrogen gas utilizes a volume exchange housing for the storage of a fuel material that reacts to generate hydrogen gas and a hydrogen separation chamber. The system includes a gas permeable membrane or membranes that allow hydrogen gas to pass through the membrane while preventing aqueous solutions from passing therethrough. The system is orientation independent. A throttle valve is also used to self regulate the reaction generating the hydrogen gas.
    Type: Grant
    Filed: June 21, 2006
    Date of Patent: June 2, 2009
    Assignee: Millennium Cell Inc.
    Inventors: Michael Strizki, Richard M. Mohring
  • Patent number: 7482298
    Abstract: The composition of compounds containing a multiplicity of different elements are optimized in general by full or partial substitutions of one or more of the atoms in such compounds so as to effect an Ne/? value which represents a peak or near peak value in ? (the electron-phonon coupling constant) so as to maximize Tc for such compositions of matter.
    Type: Grant
    Filed: November 27, 2006
    Date of Patent: January 27, 2009
    Inventor: Daniel A. Nepela
  • Publication number: 20080293558
    Abstract: A hard phase material is provided for increasing the hardness of a matrix material and improving the wear resistance thereof. The hard phase material is an aluminum boride material having the structure AlB8-16. The aluminum boride hard phase may be incorporated into a matrix material by mixing particulate aluminum boride with the matrix material and through precipitation of aluminum boride from the matrix material. Materials including the aluminum boride hard phase may be used in coating applications to provide a hard and wear resistant coating. Aluminum boride hard phase may also be incorporated into metallurgical products to improve the hardness and wear resistance of the metallurgical products.
    Type: Application
    Filed: March 9, 2007
    Publication date: November 27, 2008
    Applicant: THE NANOSTEEL CO.
    Inventors: Daniel James Branagan, Brian Meacham
  • Publication number: 20080233032
    Abstract: The present invention relates to a method for manufacturing a transition metal boride powder. The method for manufacturing a transition metal boride powder includes: i) manufacturing a mixed powder by mixing a transition metal halogenide powder and an alkali metal borohydride powder; ii) charging the mixed powder and a plurality of balls into a reaction vessel; iii) charging an inert gas into the reaction vessel and sealing the reaction vessel; iv) high energy ball milling the mixed powder and manufacturing a composite powder containing a transition metal boride and an alkali metal halogenide; v) washing the composite powder in water, dissolving the alkali metal halogenide in the water and filtering the transition metal borides; and vi) drying the filtered transition metal boride and collecting the transition metal boride powder.
    Type: Application
    Filed: March 21, 2008
    Publication date: September 25, 2008
    Applicant: Korea Institute of Science and Technology
    Inventors: Jae-Hyeok SHIM, Ji-Woo Kim, Young-Whan Cho
  • Patent number: 7397048
    Abstract: A technique for boron implantation is disclosed. In one particular exemplary embodiment, the technique may be realized by an apparatus for boron implantation. The apparatus may comprise a reaction chamber. The apparatus may also comprise a source of pentaborane coupled to the reaction chamber, wherein the source is capable of supplying a substantially pure form of pentaborane into the reaction chamber. The apparatus may further comprise a power supply that is configured to energize the pentaborane in the reaction chamber sufficiently to produce a plasma discharge having boron-bearing ions.
    Type: Grant
    Filed: September 16, 2005
    Date of Patent: July 8, 2008
    Assignee: Varian Semiconductor Equipment Associates, Inc.
    Inventors: Vikram Singh, Edmund J. Winder, Harold M. Persing, Timothy Jerome Miller, Ziwei Fang, Atul Gupta
  • Patent number: 7378376
    Abstract: The invention provides a superconductor comprising particles made of a superconductive material, and a conductive material. The conductive material is selected to be driven to a superconductive state when in proximity to the superconductive material, and preferably at least includes gallium. An unbroken length of the conductive material is located sufficiently close to a plurality of the particles to be driven to a superconductive state by the superconductive material.
    Type: Grant
    Filed: October 29, 2003
    Date of Patent: May 27, 2008
    Assignee: Nove' Technologies, Inc.
    Inventor: Matthew J. Holcomb
  • Publication number: 20080113102
    Abstract: Agents for surface treatment which can impart excellent corrosion resistance to zinc or zinc alloy products at low cost. The agents for the surface treatment of zinc or zinc alloy products of this invention include at least one water-soluble compound which contains antimony, bismuth, tellurium or tin. Ideally, a nickel salt and/or a manganese salt is also included, and most desirably tannins and/or thioureas are also included. Ideally, the zinc or zinc alloy products which have been immersed and treated in an aqueous solution which contains these agents for surface treatment are immersed in an aqueous solution which includes a sealing treatment agent selected according to the colour of the zinc or zinc alloy product to seal pinholes.
    Type: Application
    Filed: November 13, 2006
    Publication date: May 15, 2008
    Inventors: Takashi Arai, Ro Bo Shin, Takahisa Yamamoto
  • Publication number: 20080093584
    Abstract: This invention relates to an inhibitor of lead-induced stress corrosion cracking including nickel boride in the secondary side of steam generator tubes in nuclear power plants and an inhibition method using the same, and more particularly, to an inhibitor of lead-induced stress corrosion cracking, in which nickel boride is added to secondary side cooling water of the steam generator in an amount of 0.2˜6 g/l, and to an inhibition method using the same. According to this invention, when the inhibitor of lead-induced stress corrosion cracking is added to the secondary side of the steam generator tube in nuclear power plants, stress corrosion cracking of the tubes, which occurs in the lead-containing neutral or caustic solution, and a crack growth rate are decreased, thus increasing elongation. Further, a stress corrosion cracking ratio is decreased, and therefore the stress corrosion cracking resistance of metal or alloy can be improved.
    Type: Application
    Filed: March 23, 2007
    Publication date: April 24, 2008
    Inventors: Oh-Chul Kwon, Yong-Sun Yi, Hong-Pyo Kim, Joung-Soo Kim
  • Patent number: 7338921
    Abstract: An electrode is steeped in a solution of Mg and B and a negative voltage is applied to the electrode so as to precipitate superconductive MgB2 on the electrode. Superconductive MgB2 is easily manufactured in various forms and at low costs without any special device.
    Type: Grant
    Filed: April 26, 2002
    Date of Patent: March 4, 2008
    Assignee: National Institute for Materials Science
    Inventors: Hideki Abe, Hideaki Kitazawa, Akiyuki Matsushita
  • Patent number: 7294606
    Abstract: A chemically doped boron coating is applied by chemical vapor deposition to a silicon carbide fiber and the coated fiber then is exposed to magnesium vapor to convert the doped boron to doped magnesium diboride and a resultant superconductor.
    Type: Grant
    Filed: November 17, 2004
    Date of Patent: November 13, 2007
    Assignees: Specialty Materials, Inc., Iowa State University Research Foundation, Inc.
    Inventors: Raymond J. Suplinskas, Douglas Finnemore, Serquei Bud′ko, Paul Canfield
  • Patent number: 7244376
    Abstract: In hexaboride particles having particles of a hexaboride of at least one element (X) selected from Y, La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, Sr and Ca, or a dispersion of such particles, the surfaces of the hexaboride particles have physically been coated with a surface treatment agent containing silicon, selected from a silazane type treatment agent, a chlorosilane type treatment agent, an inorganic treatment agent having at least one alkoxyl group in the molecular structure, and an organic treatment agent having at least one alkoxyl group at a molecular terminal or in the side chain, or have been coated with the surface treatment agent, having chemically combined with hexaboride particles on the surfaces of the hexaboride particles.
    Type: Grant
    Filed: January 26, 2004
    Date of Patent: July 17, 2007
    Assignee: Sumitomo Metal Mining Co., Ltd.
    Inventor: Hiromitsu Takeda
  • Patent number: 7226894
    Abstract: Disclosed herein is method for making a wire comprising contacting a first end of a first superconducting wire with a second end of a second superconducting wire, wherein the superconducting wire comprises a superconducting filament having a superconducting composition comprising magnesium diboride; heating the first end of the first superconducting wire with the second end of the second superconducting wire at a point to form a joint, wherein the superconducting filament having the superconducting composition is in continuous electrical contact with any other part of the superconducting filament after the formation of the joint.
    Type: Grant
    Filed: October 22, 2003
    Date of Patent: June 5, 2007
    Assignee: General Electric Company
    Inventors: Thomas Robert Raber, Judson Sloan Marte, Evangelos Trifon Laskaris, Sergio Martins Loureiro, Robert John Zabala, Bruce Alan Knudsen, Kathleen Melanie Amm, Bruce Campbell Amm, James William Bray
  • Patent number: 7138098
    Abstract: A method of manufacturing a nanocrystallite from a M-containing salt forms a nanocrystallite. The nanocrystallite can be a member of a population of nanocrystallites having a narrow size distribution and can include one or more semiconductor materials. Semiconducting nanocrystallites can photoluminesce and can have high emission quantum efficiencies.
    Type: Grant
    Filed: October 8, 2004
    Date of Patent: November 21, 2006
    Assignee: Massachusetts Institute of Technology
    Inventors: Moungi Bawendi, Nathan E. Stott
  • Patent number: 7105033
    Abstract: A system for generating hydrogen gas utilizes a volume exchange housing for the storage of a fuel material that reacts to generate hydrogen gas and a hydrogen separation chamber. The system includes a gas permeable membrane or membranes that allow hydrogen gas to pass through the membrane while preventing aqueous solutions from passing therethrough. The system is orientation independent. A throttle valve is also used to self regulate the reaction generating the hydrogen gas.
    Type: Grant
    Filed: February 5, 2003
    Date of Patent: September 12, 2006
    Assignee: Millennium Cell, Inc.
    Inventors: Michael Strizki, Richard M. Mohring
  • Patent number: 6967011
    Abstract: The invention relates to a method of synthesizing high-temperature melting materials. More specifically the invention relates to a containerless method of synthesizing very high temperature melting materials such as borides, carbides and transition-metal, lanthanide and actinide oxides, using an Aerodynamic Levitator and a laser. The object of the invention is to provide a method for synthesizing extremely high-temperature melting materials that are otherwise difficult to produce, without the use of containers, allowing the manipulation of the phase (amorphous/crystalline/metastable) and permitting changes of the environment such as different gaseous compositions.
    Type: Grant
    Filed: December 2, 2002
    Date of Patent: November 22, 2005
    Assignee: The United States of America as represented by the United States Department of Energy
    Inventors: Marie-Louise Saboungi, Benoit Glorieux
  • Patent number: 6953770
    Abstract: The present invention relates to an MgB2-based superconductor that is easy to manufacture and well suited to mass production, and that exhibits excellent superconducting characteristics (such as a high critical current density) while still retaining the high critical temperature characteristics of MgB2. A powder mixture of magnesium, boron, and titanium is pressed into a pellet, and this product is sintered under an atmospheric pressure and other conditions (preferably at 600° C. or higher) to manufacture an MgB2-based superconductor in which titanium and/or a titanium compound are dispersed in polycrystalline MgB2. The composition of the MgB2-based superconductor is preferably adjusted to have an atomic ratio of Mg:B:Ti=x:2:y, 0.7<x<1.2 and 0.05<y<0.3, and more preferably 0.07<y<0.2, by adjusting the amounts in which the raw materials are added.
    Type: Grant
    Filed: May 10, 2002
    Date of Patent: October 11, 2005
    Assignee: International Superconductivity Technology Center, The Juridical Foundation
    Inventors: Yong Zhao, Yong Feng, Yuan Wu, Takato Machi, Yasunori Fudamoto, Naoki Koshizuka, Masato Murakami
  • Patent number: 6861038
    Abstract: A method of continuously producing a non-oxide ceramic formed of a metal constituent and a non-metal constituent. A salt of the metal constituent and a compound of the non-metal constituent and a compound of the non-metal constituent are introduced into a liquid alkali metal or a liquid alkaline earth metal or mixtures to react the constituents substantially submerged in the liquid metal to form ceramic particles. The liquid metal is present in excess of the stoichiometric amount necessary to convert the constituents into ceramic particles to absorb the heat of reaction to maintain the temperature of the ceramic particles below the sintering temperature. Ceramic particles made by the method are part of the invention.
    Type: Grant
    Filed: September 3, 2003
    Date of Patent: March 1, 2005
    Assignee: International Titanium Powder, LLC.
    Inventors: Donn Reynolds Armstrong, Stanley S. Borys, Richard Paul Anderson
  • Publication number: 20040180792
    Abstract: An electrode is steeped in a solution of Mg and B and a negative voltage is applied to the electrode so as to precipitate superconductive MgB2 on the electrode. Superconductive MgB2 is easily manufactured in various forms and at low costs without any special device.
    Type: Application
    Filed: April 29, 2004
    Publication date: September 16, 2004
    Inventors: Hideki Abe, Hideaki Kitazawa, Akiyuki Matsushita
  • Publication number: 20040159371
    Abstract: Superconducting phases comprising magnesium diboride related composites and methods of preparation.
    Type: Application
    Filed: October 7, 2003
    Publication date: August 19, 2004
    Inventor: David C. Dunand
  • Patent number: 6630427
    Abstract: Superconducting phases comprising magnesium diboride related composites and methods of preparation.
    Type: Grant
    Filed: May 31, 2002
    Date of Patent: October 7, 2003
    Assignee: Northwestern University
    Inventor: David C. Dunand
  • Patent number: 6627118
    Abstract: A crystalline Ni alloy particle for an anisotropic conductive film comprising Ni and a metalloid element such as P, B, etc. and having a structure in which a Ni intermetallic compound phase is precipitated can be produced by preparing substantially amorphous Ni alloy particle by an electroless reduction method, and heat-treating the substantially amorphous Ni alloy particle. The Ni alloy particle is preferably heat-treated after disintegration, and preferably coated with Au.
    Type: Grant
    Filed: April 23, 2001
    Date of Patent: September 30, 2003
    Assignee: Hitachi Metals, Ltd.
    Inventors: Kagehiro Kageyama, Koji Sato
  • Patent number: 6589448
    Abstract: A ceramic bearing ball in which at least a portion of a constituent ceramic is formed of an electrically conductive inorganic compound phase, whereby a proper electrical conductivity is imparted to the ceramic. Thus, electrifying of a bearing ball is prevented or effectively suppressed. This prevents the problem involved in production of balls of small diameter wherein such balls adhere to an apparatus (e.g., a container) during production thereof, thus hindering smooth progress of the production process. In addition, when ceramic balls are used in precision electronic equipment, such as a hard disk drive of a computer, which is operated at high rotational speed, adhesion of foreign substance due to electrification of the balls, and resultant generation of abnormal noise or vibration can be prevented or effectively suppressed.
    Type: Grant
    Filed: April 10, 2001
    Date of Patent: July 8, 2003
    Assignee: NGK Spark Plug Co., Ltd.
    Inventors: Tomonori Niwa, Tetsuji Yogo
  • Patent number: 6511943
    Abstract: A process of preparing superconducting magnesium diboride powder by heating an admixture of solid magnesium and amorphous boron powder or pellet under an inert atmosphere in a Mg:B ratio of greater than about 0.6:1 at temperatures and for time sufficient to form said superconducting magnesium diboride. The process can further include exposure to residual oxygen at high synthesis temperatures followed by slow cooling. In the cooling process oxygen atoms dissolved into MgB2 segregated to form nanometer-sized coherent Mg(B,O) precipitates in the MgB2 matrix, which can act as flux pinning centers.
    Type: Grant
    Filed: March 13, 2002
    Date of Patent: January 28, 2003
    Assignee: The Regents of the University of California
    Inventors: Adriana C. Serquis, Yuntian T. Zhu, Frederick M. Mueller, Dean E. Peterson, Xiao Zhou Liao
  • Patent number: 6306736
    Abstract: A process for the formation of shaped Group III-V semiconductor nanocrystals comprises contacting the semiconductor nanocrystal precursors with a liquid media comprising a binary mixture of phosphorus-containing organic surfactants capable of promoting the growth of either spherical semiconductor nanocrystals or rod-like semiconductor nanocrystals, whereby the shape of the semiconductor nanocrystals formed in said binary mixture of surfactants is controlled by adjusting the ratio of the surfactants in the binary mixture.
    Type: Grant
    Filed: February 4, 2000
    Date of Patent: October 23, 2001
    Assignee: The Regents of the University of California
    Inventors: A. Paul Alivisatos, Xiaogang Peng, Liberato Manna
  • Patent number: 6254940
    Abstract: The present invention related to methods of manufacturing oxide, nitride, carbide, and boride powders and other ceramic, organic, metallic, carbon and alloy powders and films and their mixtures having well-controlled size and crystallinity characteristics. This invention relates, more particularly, to a development in the synthesis of the ceramic, metallic, composite, carbon and alloy nanometer-sized particles with precisely controlled specific surface area, or primary particle size, crystallinity and composition. The product made using the process of the present invention and the use of that product are also claimed herein.
    Type: Grant
    Filed: May 26, 1999
    Date of Patent: July 3, 2001
    Assignee: University of Cincinnati
    Inventors: Sotiris E. Pratsinis, Srinivas Vemury
  • Patent number: 6225198
    Abstract: A process for the formation of shaped Group II-VI semiconductor nanocrystals comprises contacting the semiconductor nanocrystal precursors with a liquid media comprising a binary mixture of phosphorus-containing organic surfactants capable of promoting the growth of either spherical semiconductor nanocrystals or rod-like semiconductor nanocrystals, whereby the shape of the semiconductor nanocrystals formed in said binary mixture of surfactants is controlled by adjusting the ratio of the surfactants in the binary mixture.
    Type: Grant
    Filed: February 4, 2000
    Date of Patent: May 1, 2001
    Assignee: The Regents of the University of California
    Inventors: A. Paul Alivisatos, Xiaogang Peng, Liberato Manna
  • Patent number: 6120784
    Abstract: The invention relates to a method of imparting anti-pathogenic properties to a substrate material comprising: (a) preparing a coating composition containing an anti-pathogenic agent consisting essentially of PVP-I and N-9 in a ratio of from about 100:0 to about 0:100 of PVP-I to N-9, the coating composition further containing a pre-mix solution with which the anti-pathogenic agent is intimately mixed in a ratio of from about 6:4 to about 8:2 of agent to pre-mix on a dry basis, and having a percent solids content of from about 5% to about 35% solids; (b) feeding the anti-pathogenic coating composition into a coating machine; (c) loading substrate onto the coating machine; (d) operating the coating machine such that the coating composition comes into intimate contact with at least one surface of the substrate; and (e) drying the coated substrate material.
    Type: Grant
    Filed: October 16, 1998
    Date of Patent: September 19, 2000
    Assignee: Viro-kote, Inc.
    Inventor: Donald E. Snyder, Jr.
  • Patent number: 5861132
    Abstract: A gas phase process for the production of titanium dioxide powders having well-controlled crystalline and surface area characteristics is disclosed. In this process, which is preferably carried out in a laminar diffusion flame reactor, vapor phase TiCl.sub.4 and oxygen are mixed in a reaction area which is heated externally. The titanium dioxide powder formed is then collected. It is preferred that the heat source used be a hydrocarbon fueled (e.g., methane) flame. Optionally, a vapor phase dopant (such as SiCl.sub.4) may be added to the reaction mixture to desirably affect the physical properties of the titanium dioxide produced. In a particularly preferred embodiment, a corona electric field is positioned across the area where the combustion reaction takes place (i.e., the reaction area). High anatase, high surface area titanium dioxide powders made by this process are excellent photocatalysts. The products of this process and the use of those products as photocatalysts are also disclosed.
    Type: Grant
    Filed: September 4, 1997
    Date of Patent: January 19, 1999
    Assignee: University of Cincinnati
    Inventors: Sotiris Emmanuel Pratsinis, Srinivas Vemury, George P. Fotou, Andreas Gutsch
  • Patent number: 5858079
    Abstract: The present invention provides a strontium borate pigment composition comprising particles of a strontium borate represented by the general formula (1):.alpha.SrO..beta.B.sub.2 O.sub.3..gamma.H.sub.2 O (1)(wherein O<.alpha..ltoreq.3, O<.beta..ltoreq.4, O.ltoreq..gamma..ltoreq.5), the particles being coated with at least one compound selected from the group consisting of compounds represented by the formulae (2) to (6):.delta.SrO..epsilon.SiO.sub.2..zeta.H.sub.2 O (2)(wherein O<.delta..ltoreq.3, O<.epsilon..ltoreq.2, O.ltoreq..zeta..ltoreq.4 ).eta.SrO..theta.Al.sub.2 O.sub.3..iota.H.sub.2 O (3)(wherein O<.eta..ltoreq.5, O<.theta..ltoreq.16, O.ltoreq..iota..ltoreq.6)SrSO.sub.4 (4)SrCO.sub.3 (5)andSrHPO.sub.4 (6),the pigment composition having an average particle diameter of 0.1 .mu.m to 5 .mu.
    Type: Grant
    Filed: March 25, 1997
    Date of Patent: January 12, 1999
    Assignee: Sakai Chemical Industry Co., Ltd.
    Inventors: Koichi Ohtsu, Taizo Kaihatsu
  • Patent number: 5851507
    Abstract: A continuous process that produces nanoscale powders from different types of precursor material by evaporating the material and quenching the vaporized phase in a converging-diverging expansion nozzle. The precursor material suspended in a carrier gas is continuously vaporized in a thermal reaction chamber under conditions that favor nucleation of the resulting vapor. Immediately after the initial nucleation stages, the vapor stream is rapidly and uniformly quenched at rates of at least 1,000 K/sec, preferably above 1,000,000 K/sec, to block the continued growth of the nucleated particles and produce a nanosize powder suspension of narrow particle-size distribution. The nanopowder is then harvested by filtration from the quenched vapor stream and the carrier medium is purified, compressed and recycled for mixing with new precursor material in the feed stream.
    Type: Grant
    Filed: September 3, 1996
    Date of Patent: December 22, 1998
    Assignee: Nanomaterials Research Corporation
    Inventors: Shahid Pirzada, Tapesh Yadav
  • Patent number: 5837165
    Abstract: A rare earth hexaboride electron-emitting material of the formula ReB.sub.6+x, wherein Re is La, Ce or (La+Ce) and 0.05.ltoreq.x.ltoreq.0.20.
    Type: Grant
    Filed: September 3, 1996
    Date of Patent: November 17, 1998
    Assignee: National Institute for Research in Inorganic Materials
    Inventors: Shigeki Otani, Ryutaro Soda, Yoshio Ishizawa
  • Patent number: 5749937
    Abstract: A fast quench reaction includes a reactor chamber having a high temperature heating means such as a plasma torch at its inlet and a restrictive convergent-divergent nozzle at its outlet end. Reactants are injected into the reactor chamber. The resulting heated gaseous stream is then rapidly cooled by passage through the nozzle. This "freezes" the desired end product(s) in the heated equilibrium reaction stage.
    Type: Grant
    Filed: March 14, 1995
    Date of Patent: May 12, 1998
    Assignee: Lockheed Idaho Technologies Company
    Inventors: Brent A. Detering, Alan D. Donaldson, James R. Fincke, Peter C. Kong
  • Patent number: 5505928
    Abstract: Nanometer-scale crystals of III-V semiconductors are disclosed, They are prepared by reacting a group III metal source with a group V anion source in a liquid phase at elevated temperature in the presence of a crystallite growth terminator such as pyridine or quinoline.
    Type: Grant
    Filed: April 21, 1994
    Date of Patent: April 9, 1996
    Assignee: The Regents of University of California
    Inventors: A. Paul Alivisatos, Michael A. Olshavsky
  • Patent number: 5474591
    Abstract: The present invention relates, in general, to a method of synthesizing nanocrystals and, in particular, to a method of synthesizing III-V semiconductor nanocrystals in solution at a low temperature and in a high yield. The method comprises the combination of mixing a Na/K alloy with an excess of Group VA element (E) in an aromatic solvent to form a (Na/K).sub.3 E pnictide, and subsequently mixing the pnictide with a Group IIIA trihalide (MX.sub.3) in a coordinating solution to form a suspension that includes the nanocrystalline semiconductor.
    Type: Grant
    Filed: January 31, 1994
    Date of Patent: December 12, 1995
    Assignee: Duke University
    Inventors: Richard L. Wells, Shreyas S. Kher
  • Patent number: 5443771
    Abstract: A process is described for producing ceramic fibres composed of titanium boride, zirconium boride or hafnium boride. The boride fibres are obtained by reacting a boron oxide precursor fibre with a titanium halide, zirconium halide or hafnium halide gas in the presence of hydrogen. Ceramic titanium, zirconium or hafnium nitride fibres may also be produced by the process, by means of the additional presence of nitrogen gas in the gas phase. The process is conducted at temperature higher than 500.degree. C.
    Type: Grant
    Filed: January 21, 1994
    Date of Patent: August 22, 1995
    Inventor: Sankar D. Gupta
  • Patent number: 5338523
    Abstract: A process for the production of high purity, high surface area, submicron size transition metal carbides and borides which comprises mixing transition metal oxide with carbon in an amount sufficient to form the corresponding carbide or boride, heating the reactants at a temperature of higher than 1000.degree. C. under a small pressure of non-reacting gas and then holding the temperature whilst applying simultaneously subatmospheric pressure and agitation until the reaction is complete.
    Type: Grant
    Filed: October 26, 1992
    Date of Patent: August 16, 1994
    Inventor: Vladimir D. Krstic
  • Patent number: 5311103
    Abstract: An improved radiofrequency wave apparatus (10) which provides a relatively large diameter (on the order of magnitude 500 millimeters) plasma (56) for the coating of a material on a surface of a substrate (50) is described. The apparatus has a movable stage (54), which is used to change the position of the substrate with respect to the plasma. The radiofrequency waves are preferably microwaves or UHF waves (2.45 GHz or 915 MHg). The apparatus has a probe (30) which is mounted along the longitudinal axis (A--A) through a sliding short (16). The apparatus operates in the TM mode and is particularly useful for uniformly coating a relatively large surface of the substrate (or a number of smaller surfaces of substrates at the same time) with a material which is formed in the plasma. The apparatus has been used for depositing diamond films on a number of substrates (Si, Si.sub.3 N.sub.4 and the like).
    Type: Grant
    Filed: June 1, 1992
    Date of Patent: May 10, 1994
    Assignee: Board of Trustees operating Michigan State University
    Inventors: Jes Asmussen, Jie Zhang
  • Patent number: 5256394
    Abstract: A method of imaging a corporeal situs by radiological techniques, comprising delivery to the corporeal situs of an imagingly effectively amount of a physiologically acceptable composition comprising a boron reagent. A variety of illustrative boron reagents is described, including iodinated boron salts, and boron-containing cyclophosphazene and polyphosphazene reagents having radiopaque character. The reagents and method of the present invention may be employed for a wide variety of radiological imaging applications, e.g., excretory urography, angiocardiography, and aortography.
    Type: Grant
    Filed: October 23, 1991
    Date of Patent: October 26, 1993
    Assignee: Boron Biologicals, Inc.
    Inventor: Bernard F. Spielvogel
  • Patent number: 5194128
    Abstract: A method for the manufacture of ultrafine particles or atom clusters is disclosed. The ultrafine particles of size between about 10 to 1000 Angstroms are formed by the disruption of the crystal lattice or micrograin structure of the metal, alloy or intermetallic compound in one or both of two spaced electrodes by a high frequency, high voltage, high peak current discharge. The ultrafine particles are not subjected to fractionation as in evaporative processes and accordingly are remarkably predictable in both particle size, distribution of sizes and atomic composition, and also are readily transportable in carrier gases.
    Type: Grant
    Filed: August 2, 1991
    Date of Patent: March 16, 1993
    Assignee: Thermo Electron Technologies Corporation
    Inventors: John S. Beaty, Jonathan L. Rolfe
  • Patent number: 5183785
    Abstract: The present invention provides an aluminum borate ceramic having a high porosity and a tightly controlled pore size distribution, while maintaining good mechanical strength. The ceramic body can be formed by decomposing boric acid-stabilized aluminum acetate to form an aluminum borate powder, and sintering the powder to form a ceramic body.
    Type: Grant
    Filed: June 29, 1990
    Date of Patent: February 2, 1993
    Assignee: Coors Porcelain Company
    Inventor: Michael J. Readey
  • Patent number: 5176890
    Abstract: The rare earth borides, e.g., the tetraborides and hexaborides of lanthanum, cerium and praseodymium, are directly prepared by heating/reacting a mixture of at least one rare earth chloride and elemental boron at an elevated temperature, e.g., a temperature ranging from 1,200.degree. to 1,500.degree. C.
    Type: Grant
    Filed: November 28, 1988
    Date of Patent: January 5, 1993
    Assignee: Rhone-Poulenc Chimie
    Inventors: Alain Iltis, Patrick Maestro
  • Patent number: 5174975
    Abstract: A process is provided for the preparation of metals, metal carbides, nitrides, borides, silicides, sulfides and phosphides by low temperature pyrolysis of a selected organometallic precursor. The precursor, in addition to containing organic ligands, contains the metal M, which is a transition metal or tin, and the element X (C, N, B, Si, S, or P), which may be bound directly to M, contained within the ligands, or both. The process enables one to provide surface coatings or shaped articles of metals, metal carbides, nitrides, and the like.
    Type: Grant
    Filed: November 13, 1989
    Date of Patent: December 29, 1992
    Assignee: SRI International
    Inventor: Richard M. Laine
  • Patent number: 5169832
    Abstract: Metal boride powders can be produced with a predetermined particle size by controlling reaction conditions. The metal boride powder is produced by reacting a solid boron source, a metal source and a reductant under conditions sufficient to produce a metal boride powder with a particle size correlating to that of the solid boron source. The reaction is preferably stopped after the formation of products but before any apprecible crystal growth occurs.
    Type: Grant
    Filed: July 12, 1988
    Date of Patent: December 8, 1992
    Assignee: The Dow Chemical Company
    Inventors: Bijan Khazai, William G. Moore
  • Patent number: 5169613
    Abstract: The invention relates to the synthesis of ammonia-haloboranes, and in particular, H.sub.3 NBH.sub.2 Cl, which materials are useful for the produciton of amorphous boron nitride and crystalline turbostratic boron nitride by heating.
    Type: Grant
    Filed: February 6, 1991
    Date of Patent: December 8, 1992
    Assignee: The Ohio State University Research Foundation
    Inventors: Sheldon G. Shore, Philipp M. Niedenzu, Allison L. DeGraffenreid
  • Patent number: RE37853
    Abstract: A fast quench reaction includes a reactor chamber having a high temperature heating means such as a plasma torch at its inlet and a restrictive convergent-divergent nozzle at its outlet end. Reactants are injected into the reactor chamber. The resulting heated gaseous stream is then rapidly cooled by passage through the nozzle. This “freezes” the desired end product(s) in the heated equilibrium reaction stage.
    Type: Grant
    Filed: May 11, 2000
    Date of Patent: September 24, 2002
    Assignee: Betchel BWXT Idaho, LLC
    Inventors: Brent A. Detering, Alan D. Donaldson, James R. Fincke, Peter C. Kong