Abstract: In a method for producing nanoparticles of copper selenide, a flowable copper precursor is formed by combining a copper starting material and a ligand, and a flowable selenium precursor is formed by suspending a selenium starting material in a liquid. Then a flowable copper-selenium mixture including a lower-polarity solvent is formed by combining the flowable copper precursor and the flowable selenium precursor. The flowable copper-selenium mixture is conducted through at least one heating unit, and the nanoparticles of copper selenide are isolated in an oxygen-depleted environment. The isolation includes combining a solution containing the nanoparticles of copper selenide and a deoxygenated, higher-polarity solvent to precipitate the nanoparticles.

Abstract: Cesium-niobium-chalcogenide compounds and a semiconductor device are provided. The cesium-niobium-chalcogenide compound is selected from the group consisting of CsNbS3, CsNbSe3, and CsNbOx-3Qx, where Q is S or Se, and x is 1 or 2, and includes an edge-shared orthorhombic crystal structure. In one embodiment, the semiconductor device includes a cathode layer, an anode layer, and an active layer disposed between the cathode layer and the anode layer, and the active layer includes the cesium-niobium-chalcogenide compound.

Abstract: An exemplary method for producing a mixed metal chalcogenide under atmospheric pressure may include forming a reaction mixture by mixing a first metal chalcogenide and a second metal chalcogenide. An exemplary method may further include pouring a first layer of NaCl within a reactor, where an exemplary reactor may include a container and a cap. Pouring an exemplary first layer of NaCl within an exemplary reactor may include pouring an exemplary first layer of NaCl on an exemplary base end of an exemplary container of the exemplary reactor. An exemplary method may further include pouring an exemplary reaction mixture into an exemplary container on top of an exemplary first layer of NaCl, pouring a second layer of NaCl into an exemplary container on top of an exemplary reaction mixture, sealing an exemplary container by closing an exemplary cap and pouring molten NaCl on top of the exemplary cap, and heating an exemplary reactor at a predetermined temperature for a predetermined time.

Abstract: A method for preparing a fluorescent polarizing film based on directional arrangement of quantum rods. In the method, an inkjet printing technology is used for printing quantum-rod ink having proper viscosity and surface tension on a substrate according to a preset pattern, and directionally arranging quantum rods to obtain a fluorescent polarizing film. The diameter and spacing of fluorescent lines obtained by the method can be controlled and adjusted according to parameter conditions such as a needle aperture, a printing speed, and a preset pattern. The prepared transparent fluorescent film with directionally arranged quantum rods has a high degree of polarization, can be prepared on a flexible substrate in a normal temperature environment, and has wide applicability.

Abstract: Nanosheets of Ca2+ and Y3+, with CO32? in the interlayer with a uniform diameter and lengths of several tens of microns have been successfully synthesized in a hydrotalcite layer structure (a layered double hydroxide), using a hydrothermal method. The formation mechanism of lamellar CaY—CO32? layered double hydroxides (LDHs) depends on the molar ratio of Ca and Y and the reaction time and temperature. The resulting LDH materials exhibit excellent affinity and selectivity for heavy transition metal and metalloid ions.

Abstract: A quantum dot is represented by Zn0.5-xCdxS0.5-ySey and has a size ranging from 7 nm to 20 nm, wherein 0<x<0.2, 0.005?y<0.2, and Zn, Cd, S, and Se are non-uniformly distributed therein.

Abstract: In one embodiment, a coating is provided that includes a deposition surface, and a coating on the deposition surface. The coating may include particles of a metal chalcogenide comprising a fullerene-like geometry, a tubular-like geometry or a combination of fullerene-like geometries and tubular-like geometries. The metal chalcogenide composition has a molecular formula of MX2.

Abstract: A semiconductor memory device disposed over a substrate includes a common electrode, a selector material layer surrounding the common electrode, and a plurality of phase change material layers in contact with the selector material layer.

Abstract: A piezoelectric element includes a first electrode; a second electrode; and a piezoelectric layer arranged between the first electrode and the second electrode, in which the piezoelectric layer is a thin film that includes a perovskite-type composite oxide which includes potassium, sodium, and niobium and which is preferentially oriented in the (100) plane, and a crystal structure of the perovskite-type composite oxide includes a basic lattice structure having an oxygen octahedron and a super lattice structure in which the oxygen octahedron is tilted.

Abstract: A short channel ordered mesoporous carbon loaded indium cobalt sulfide and indium nickel sulfide ternary composite photocatalyst, and a preparation method and application thereof. The short channel ordered mesoporous carbon loaded indium cobalt sulfide and indium nickel sulfide ternary composite photocatalyst is prepared by mixing pretreated short channel mesoporous carbon with cobalt salt, nickel salt, indium salt and reducing agent with a hydrothermal reaction. The short channel ordered mesoporous carbon is obtained by calcining a short channel ordered mesoporous silica and a carbon source under the protection of nitrogen, wherein the short channel ordered mesoporous silica is prepared by carrying out reactions of sol-gel-hydrothermal-calcination sequentially using a mixture of a surfactant, a hydrochloric acid solution, ammonium fluoride and tetraethyl orthosilicate.

Abstract: Oil spill detection is crucial, both from an environmental perspective and the associated economic losses. Current optical oil sensing techniques, such as underwater microscopy and light scattering methods, mainly focus on detecting the properties of particles or organisms in water and often require costly equipment and sophisticated data processing. Recent studies on graphitic foam show its extraordinary pollutant absorbing properties, with high absorption weight ratios. Here we propose to produce a graphene foam based ultra-light material that changes its optical properties on absorbing oil species. The results demonstrate clear changes in optical transmission and scattering properties of graphene foam when exposed to various oils. The effective graphene foam sorbent can be easily integrated with optic fibers systems to detect the optical property variations and also to monitor oil presence/spillages remotely. Such sensors can also be used for underground oil exploration.

Abstract: A vanadium recovery approach utilizes oil fly ash (OFA), in contrast to coal fly ash, for separation and recovery of vanadium. OFA is first carbon burned to reduce the volume for recycling, and also to provide a fuel for other industrial processes. Following an almost 90% weight reduction from carbon burning, the remaining material includes about 18% vanadium. A salt roasting performed at the same temperature (about 650° C.) as the carbon burning allows use of the same oven or furnace, reducing heat requirements for the overall process. Salt roasting generates a water-soluble material from which a water leaching process yields a vanadium leach solution containing recovered vanadium, avoiding a need for caustic or volatile leaching agents. Ammonium metavanadate is precipitated from the vanadium leach solution through addition of ammonium sulfate, and a calcination process used to generate vanadium oxide (V2O5).

Abstract: The invention relates to a polycrystalline IR transparent material produced by sintering chalcogenide powder, e.g., ZnS powder, using hot uniaxial pressing followed by hot isostatic pressing. The microstructure of the material described in this disclosure is much finer than that found in material produced using the state of the art process. By using a powder with a particle size fine enough to improve sintering behavior but coarse enough to prevent a lowering of the wurtzite-sphalerite transition temperature, a highly transparent material with improved strength is created without degrading the optical properties. A high degree of transparency is achieved during hot pressing by applying pressure after the part has reached a desired temperature. This allows some degree of plastic deformation and prevents rapid grain growth which can entrap porosity. The crystallographic twins created during this process further inhibit grain growth during hot isostatic pressing.

Abstract: A first aspect of the disclosure provides for method of synthesizing bismuth-antimony seleno-telluride thermoelectric nanocrystals. The method may comprise: synthesizing an oxidative chalcogen precursor, the synthesizing including: dissolving a metal in acidic deionized water by reacting the metal with a caustic solution in the deionized water to synthesize a first solution, and adjusting at least one of: pH level or a pE level of the first solution; exposing the oxidative chalcogen precursor to a pnictogen precursor to create nanoseeds; and subjecting the nanoseeds to a microwave thereby synthesizing the bismuth-antimony seleno-telluride thermoelectric nanocrystals.

Abstract: An object of the present invention is to provide a method for efficiently recovering solid selenium or gaseous selenium from wastewater/waste using a microorganism. The present invention provides a method for recovering selenium, comprising reducing a water-soluble selenium compound so as to produce elemental selenium or gaseous selenium by allowing a sample containing a water-soluble selenium compound to come into contact at a temperature which is more than 35° C. and is 40° C. or less at pH 7.0 to 9.4 with a microorganism capable of producing elemental selenium or gaseous selenium through reduction of a water-soluble selenium compound.

Abstract: A continuous reaction system (CRS) allows a method to prepare quantum dots (QDs) in a continuous manner with high precision. The CRS pumps a plurality of reagent fluids into one or more mixing sites to form a reaction fluid that is carried through a heating chamber at elevated pressures to carry out hydrothermal growth of the QDs. The pumps and heating chamber are controlled with a high precision by employing a detector downstream of the heating chamber to provide a signal that is dependent on the composition and size of the QDs. The signal is provided to a signal processor that provides a signal that control the flow rates and temperature parameters in the system. The QDs produced in this manner are consistent in size and composition and can be of a single semiconductor composition or can be core-shell QDs with a shell semiconductor formed on a core semiconductor.

Abstract: Advantageous films and coatings (e.g., transparent conductive films), and improved methods for fabricating such films and/or coatings, are provided. The improved methods for fabricating transparent conductive films/coatings may involve trapping at least a portion of a layered material (e.g., graphene sheet(s) or layer(s) of graphite) at an interface of a phase separated system (e.g., at an interface of two non-mixing solvents). Transparent, one to four layer, conductive films/coatings of pristine natural flake graphene are produced by kinetically trapping graphene sheets at an interface of a phase separated system (e.g., at an oil/water interface).

Abstract: A thermoelectric material containing a dichalcogenide compound represented by Formula 1 and having low thermoelectric conductivity and high Seebeck coefficient: RaTbX2-nYn??(1) wherein R is a rare earth element, T includes at least one element selected from the group consisting of Group 1 elements, Group 2 elements, and a transition metal, X includes at least one element selected from the group consisting of S, Se, and Te, Y is different from X and includes at least one element selected from the group consisting of S, Se, Te, P, As, Sb, Bi, C, Si, Ge, Sn, B, Al, Ga and In, a is greater than 0 and less than or equal to 1, b is greater than or equal to 0 and less than 1, and n is greater than or equal to 0 and less than 2.

Abstract: The present invention provides a hollow IM-5 molecular sieve sphere and the preparation process thereof. The process according to the present invention adds a relatively great amount of the surfactant of a cationic quaternary ammonium salt in the IM-5 molecular sieve system, to form a hollow IM-5 molecular sieve sphere via the micelle action by the surfactant, which structure benefits the mass transfer of the reaction process.

Abstract: Disclosed herein is a method of purifying and doping a population of semiconductor nanocrystals. The method includes mixing the population of semiconductor nanocrystals having a first material system and a first ligand with a set of particles in the presence of a first solvent, the set of particles having a second material system which is different from the first material system and a second ligand which is different from the first ligand, to form a mixture. The method also includes facilitating a ligand exchange and an ionic exchange in the mixture, altering the first material system of the population of semiconductor nanocrystals to a third material system, different from the first material system and the second material system. The method includes sonicating the mixture and isolating the population of semiconductor nanocrystals having the third material system and the second ligand from the mixture.

Abstract: There is disclosed a process of making metal chalcogenide particles. The process comprises the steps of reacting a metal salt solution with a precipitant solution under conditions to form metal chalcogenide particles and by-product thereof, coating the metal chalcogenide particles with a surfactant; and separating the surfactant coated chalcogenide particles from the by-product to obtain metal chalcogenide particles substantially free of by-product.

Abstract: A method for the preparation of copper indium gallium diselenide/disulfide (CIGS) nanoparticles utilizes a copper-rich stoichiometry. The copper-rich CIGS nanoparticles are capped with organo-chalcogen ligands, rendering the nanoparticles processable in organic solvents. The nanoparticles may be deposited on a substrate and thermally processed in a chalcogen-rich atmosphere to facilitate conversion of the excess copper to copper selenide or copper sulfide that may act as a sintering flux to promote liquid phase sintering and thus the growth of large grains. The nanoparticles so produced may be used to fabricate CIGS-based photovoltaic devices.

Abstract: According to example embodiments, a two-dimensional (2D) material element may include a first 2D material and a second 2D material chemically bonded to each other. The first 2D material may include a first metal chalcogenide-based material. The second 2D material may include a second metal chalcogenide-based material. The second 2D material may be bonded to a side of the first 2D material. The 2D material element may have a PN junction structure. The 2D material element may include a plurality of 2D materials with different band gaps.

Abstract: Disclosed are an ink composition for manufacturing a light absorption layer including metal nano particles and a method of manufacturing a thin film using the same, more particularly, an ink composition for manufacturing a light absorption layer including copper (Cu)-enriched Cu—In bimetallic metal nano particles and Group IIIA metal particles including S or Se dispersed in a solvent and a method of manufacturing a thin film using the same.

Abstract: Disclosed are a method of preparing CI(G)S nano particles forming a light absorption layer of solar cells, including dissolving at least one Group VI source selected from the group consisting of compounds comprising sulfur (S), selenium (Se), or a combination thereof, and an indium (In) salt in a solvent to prepare a first solution, reacting the first solution to form first precursor particles, dissolving a copper (Cu) salt in a solvent to prepare a second solution, mixing the second solution with the first solution in which the first precursor is formed to manufacture a mixture and purifying the synthesized CI(G)S nano particles after synthesizing the CI(G)S nano particles by reacting the mixture, and CI(G)S nano particles manufactured using the same.

Abstract: The present invention relates to dispersible binary and ternary metal chalcogenide nanoparticle compositions that are substantially free of organic stabilizing agents. These nanoparticle compositions can be used as precursor inks for the preparation of copper zinc tin chalcogenides and copper indium gallium chalcogenides. In addition, this invention provides processes for manufacturing coated substrates and thin films of copper zinc tin chalcogenide and copper indium gallium chalcogenide. This invention also provides process for manufacturing photovoltaic cells incorporating such thin films.

Abstract: A method of producing a metal chalcogenide dispersion usable in forming a light absorbing layer of a solar cell, the method including: a metal chalcogenide nano particle formation step in which at least one metal or metal compound selected from the group consisting of a group 11, 12, 13, 14 or 15 metal or metal compound, a water-containing solvent and a group 16 element-containing compound are mixed together to obtain metal chalcogenide nano particles; and an addition step in which a compound (1) represented by general formula (1) is added to the metal chalcogenide nano particles, thereby obtaining a metal chalcogenide dispersion (wherein R1 to R4 each independently represents an alkyl group, an aryl group or a hydrogen atom; provided that at least one of R1 to R4 represents a hydrocarbon group).

Abstract: Described herein are multi-segmented nanowires, nanosheets and nanobelts, and devices and methods using them for the generation of multicolor and white light.

Abstract: A method of producing a hydrazine-coordinated Cu chalcogenide complex, including: a step (I) in which Cu or Cu2Se and a chalcogen are reacted in dimethylsulfoxide in the presence of hydrazine, a step (II) in which a solution obtained in the step (I) is subjected to concentration and filtration, and a step (III) in which a purifying solvent is added to a solution obtained in the step (II).

Abstract: A method for producing a thiometallate or selenometallate material is provided in which a first salt containing an anionic component selected from the group consisting of MoS42?, MoSe42?, WS42?, WSe42?, VS43?, and VSe43? and a second salt containing a cationic component comprising a metal in any non-zero oxidation state selected from the group consisting of Cu, Fe, Ag, Co, Mn, Re, Ru, Rh, Pd, Ir, Pt, B, Al, Ce, La, Pr, Sm, Eu, Yb, Lu, Dy, Ni, Zn, Bi, Sn are mixed under anaerobic conditions in an aqueous mixture at a temperature of from 50° C. to 150° C.

Abstract: A method for producing a thiometallate or selenometallate material is provided in which a first salt containing an anionic component selected from the group consisting of MoS42?, MoSe42?, WS42?, WSe42?, VS43?, and VSe43?, and a second salt containing a cationic component comprising a metal in any non-zero oxidation state selected from the group consisting of Fe, Ag, Co, Mn, Re, Ru, Rh, Pd, Ir, Pt, B, Al, Ce, La, Pr, Sm, Eu, Yb, Lu, Dy, Ni, Zn, Bi, Sn, Pb, Cd, Sb, Ge, Ga, In, Au, Hg are mixed under anaerobic conditions in an aqueous mixture at a temperature of from 15° C. to 150° C.

Abstract: The present invention discloses an Al—Sb—Te phase change material used for PCM and fabrication method thereof. Said phase change material, which can be prepared by PVD, CVD, ALD, PLD, EBE, and ED, is a mixture of three elements aluminum (Al), antimony (Sb) and tellurium (Te) with a general formula of Alx(SbyTe1)1-x, where 0<x?0.85, 0.67?y?7. Said material is electrically driven from outside. By adjusting the content of three elements in the mixture, storage materials with different crystallization temperatures, melting temperatures and activation energies of crystallization can be achieved. Any two elements of aluminum, antimony and tellurium can be bonded to each other, so the adjustability is very high, maintaining the phase change properties in a wide range.

Abstract: Provided are methods for making quantum nanostructures based on use of a combination of nucleation and growth precursors. The methods can be used to provide quantum nanostructures of a selected size. Also provided are quantum nanostructures, compositions comprising the quantum nanostructures, and uses of the quantum nanostructures. The quantum nanostructures can be used, for example, in imaging applications.

Abstract: Disclosed herein are thermoelectric materials with high performance characteristics, and methods of use thereof Among the thermoelectric materials disclosed are those of the formula (Bi1?xSbx)2Te3. In some embodiments, the invention teaches that 0.5?x?0.9. In some embodiments, the invention further teaches doping with iodine (I), in order to decrease the hole carrier concentration of (Bi1?xSbx)2Te3 mixed crystal and improve zT.

Abstract: A method for separating tellurium includes separating and recovering tellurium (Te) from a dissolved solution containing the tellurium using a solvent extraction by an extractant, which contains one selected from a group consisting of tributyl phosphate (TBP), tris(2-ethylhexyl) phosphate (TEHP) and a combination thereof. The method may separate and recover the tellurium as a high-priced metallic element from a material, such as a Bi2Te3-based waste thermoelectric material, which contains not only the tellurium but also other metallic elements, simply and economically using a solvent extraction, whereby the tellurium with high yield and high purity can be separated, recovered and recycled.

Abstract: A method of treating value bearing material comprising oxidized or surface oxidized mineral values includes the steps of crushing the value bearing material, contacting the crushed material! with a sulfide solution to sulfide the oxidized or surface oxidized mineral values, and adding ions of a selected base metal to the crushed value bearing material. The value bearing material may comprise oxidized or surface oxidized base metal or precious metal minerals. The crushed value bearing material is prepared as a slurry or pulp comprising from 15% to 40% solids and the remainder comprising water. The sulfide solution preferably comprises a soluble sulfidiser such as sodium hydrosulfide and the base-metal ion solution preferably comprises metal salt of base metals like copper or iron.

Abstract: The present invention is directed to a process for synthesizing nanoparticles. This process involves providing a stable emulsion containing a plurality of droplets suspended in a continuous phase. The droplets, which are encapsulated by an interfacially-active material, contain a first reactant dissolved in a dispersed phase. The process also involves contacting a gas phase containing a second reactant diluted in a carrier gas with the stable emulsion under conditions effective to permit the first reactant and second reactant to react and form nanoparticles. The present invention further relates to nanoparticle-loaded emulsions and their uses in formulations for various purposes.

Abstract: Disclosed herein is a composition for forming an inorganic pattern, comprising an inorganic precursor, at least one stabilizer selected from ?-diketone and ?-ketoester, and a solvent. Use of the composition enables efficient and inexpensive formation of an inorganic micropattern.

Abstract: A method for recycling of thin film Cadmium Telluride photovoltaic modules at the end of their life, and manufacturing scrap, has been developed. This method allows for minimum glass fine generation, requires little or no acid compared to other methods, and generates a pure cadmium and tellurium product at recoveries in excess of about 80 percent. In addition, the process allows for the recovery of a clean soda-lime plate glass product.

Abstract: A bulk semiconducting scintillator device, including: a Li-containing semiconductor compound of general composition Li-III-VI2, wherein III is a Group III element and VI is a Group VI element; wherein the Li-containing semiconductor compound is used in one or more of a first mode and a second mode, wherein: in the first mode, the Li-containing semiconductor compound is coupled to an electrical circuit under bias operable for measuring electron-hole pairs in the Li-containing semiconductor compound in the presence of neutrons and the Li-containing semiconductor compound is also coupled to current detection electronics operable for detecting a corresponding current in the Li-containing semiconductor compound; and, in the second mode, the Li-containing semiconductor compound is coupled to a photodetector operable for detecting photons generated in the Li-containing semiconductor compound in the presence of the neutrons.

Abstract: A process for producing nanoparticles incorporating ions selected from groups 13, 16, and 11 or 12 of the periodic table, and materials produced by the process. In an embodiment, the process includes effecting conversion of a nanoparticle precursor composition comprising group 13, 16, and 11 or 12 ions to the material of the nanoparticles in the presence of a selenol compound. Other embodiments include a process for fabricating a thin film including nanoparticles incorporating ions selected from groups 13, 16, and 11 or 12 of the periodic table as well as a process for producing a printable ink formulation including the nanoparticles.

Abstract: A light absorbing material may have an energy bandgap of greater than or equal to about 0.8 eV and an absorption coefficient of greater than about 2.1×105 cm?1 at about 0.8 eV.

Abstract: This invention discloses the synthesis of metal chalcogenides using chemical vapor deposition (CVD) process, atomic layer deposition (ALD) process, or wet solution process. Ligand exchange reactions of organosilyltellurium or organosilylselenium with a series of metal compounds having neucleophilic substituents generate metal chalcogenides. This chemistry is used to deposit germanium-antimony-tellurium (GeSbTe) and germanium-antimony-selenium (GeSbSe) films or other tellurium and selenium based metal compounds for phase change memory and photovoltaic devices.

Abstract: The invention is directed to a method for producing non-oxide semiconductor nanoparticles, the method comprising: (a) subjecting a combination of reaction components to conditions conducive to microbially-mediated formation of non-oxide semiconductor nanoparticles, wherein said combination of reaction components comprises i) anaerobic microbes, ii) a culture medium suitable for sustaining said anaerobic microbes, iii) a metal component comprising at least one type of metal ion, iv) a non-metal component containing at least one non-metal selected from the group consisting of S, Se, Te, and As, and v) one or more electron donors that provide donatable electrons to said anaerobic microbes during consumption of the electron donor by said anaerobic microbes; and (b) isolating said non-oxide semiconductor nanoparticles, which contain at least one of said metal ions and at least one of said non-metals.

Abstract: The present invention is generally directed to a method of making chalcogenide glasses including holding the melt in a vertical furnace to promote homogenization and mixing; slow cooling the melt at less than 10° C. per minute; and sequentially quenching the melt from the top down in a controlled manner. Additionally, the present invention provides for the materials produced by such method. The present invention is also directed to a process for removing oxygen and hydrogen impurities from chalcogenide glass components using dynamic distillation.

Abstract: Disclosed herein is a method of synthesizing a nanocrystal. The method can include reacting a bismuth material, an antimony material, and a ligand together with a heat source. The method may also include injecting a sulfur precursor at a predetermined temperature and maintaining the predetermined temperature for a predetermined amount of time to form a plurality of precursor nanocrystals. The precursor nanocrystals may include Bi0.5Sb1.5S3 nanocrystals.

Abstract: A method for separating tellurium includes separating and recovering tellurium (Te) from a dissolved solution containing the tellurium using a solvent extraction by an extractant, which contains one selected from a group consisting of tributyl phosphate (TBP), tris(2-ethylhexyl) phosphate (TEHP) and a combination thereof. The method may separate and recover the tellurium as a high-priced metallic element from a material, such as a Bi2Te3-based waste thermoelectric material, which contains not only the tellurium but also other metallic elements, simply and economically using a solvent extraction, whereby the tellurium with high yield and high purity can be separated, recovered and recycled.

Abstract: Provided is a process for preparation of a compound containing a group 6A element which includes reaction of at least one compound selected from a group consisting of group IB element containing compounds and group 3 A element containing compounds with a group 6A element containing compound carried out using a reductant in a desirable solvent to produce a compound containing group 1B-6A elements, a compound containing group 3 A-6A elements and/or a compound containing group 1B-3A-6A elements.

Abstract: A gamma radiation source comprises 75Selenium wherein the 75Selenium is provided in the form of compounds, alloys or mixtures with one or more nonmetals which upon irradiation do not produce products capable of sustained emission of radiation which would unacceptably interfere with the gamma radiation of 75Selenium. A further gamma radiation source comprises 75Selenium wherein the 75Selenium is provided in the form of compounds, alloys or mixtures with one or more metals or nonmetals, the neutron irradiation of which does produce products capable of sustained emission of radiation which would acceptably complement the gamma radiation of 75Selenium. Further, the gamma radiation source may have components that are separately irradiated before being combined and the components may be of natural isotopic composition or of isotopically modified composition so that the subsequent radiation peaks may also be adjusted in relative frequency.

Abstract: Disclosed are new compound semiconductors which may be used for solar cells or as thermoelectric materials, and their application. The compound semiconductor may be represented by a chemical formula: InxMyCo4-m-aAmSb12-n-z-bXnQz, where M is at least one selected from the group consisting of Ca, Sr, Ba, Ti, V, Cr, Mn, Cu, Zn, Ag, Cd, Sc, Y, La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu, A is at least one selected from the group consisting of Fe, Ni, Ru, Rh, Pd, Ir and Pt, X is at least one selected from the group consisting of Si, Ga, Ge and Sn, Q is at least one selected from the group consisting of O, S, Se and Te, 0<x<1, 0?y<1, 0?m?1, 0?a?1, 0?n<9, 0?z?4, 0?b?3 and 0<n+z+b.