Abstract: The present disclosure provides systems and methods for crystal growth of cadmium zinc tellurium (CZT) and cadmium tellurium (CdTe) crystals with an inverted growth reactor chamber. The inverted growth reactor chamber enables growth of single, large, high purity CZT and CdTe crystals that can be used, for example, in X-ray and gamma detection, substrates for infrared detectors, or the like. The inverted growth reactor chamber enables reductions in the presence of Te inclusions, which are recognized as an important limiting factor in using CZT or CdTe as radiation detectors. The inverted growth reactor chamber can be utilized with existing crystal growth techniques such as the Bridgman crystal growth mechanism and the like. In an exemplary embodiment, the inverted growth reactor chamber is a U-shaped ampoule.

Abstract: The present invention relates to a use of sodium selenosulfate for supplementing selenium and enhancing the therapeutic efficacy of chemotherapy agents for cancers, and a rapid process for preparing sodium selenosulfate comprising: mixing sodium selenite, the reducing agent and sodium sulfite in a certain proportion to form sodium selenosulfate quickly.

Abstract: The invention relates to the use of a thermoelectric material for thermoelectric purposes at a temperature of 150 K or less, said thermoelectric material is a material corresponding to the stoichiometric formula FeSb2, wherein all or part of the Fe atoms optionally being substituted by one or more elements selected from the group comprising: Sc, Ti, V, Cr, Mn, Co, Ni, Cu, Zn, Y, Zr, Nb, Mo, Tc, Ru, Rh, Pd, Ag, Cd, La, Hf, Ta, W, Re, Os, Tr, Pt, Au, Hg, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu and a vacancy; and wherein all or part of the Sb atoms optionally being substituted by one or more elements selected from the group comprising: P, As, Bi, S, Se, Te, B, Al, Ga, In, Tl, C, Si, Ge, Sn, Pb and a vacancy; with the proviso that neither one of the elements Fe and Sb in the formula FeSb2 is fully substituted with a vacancy, characterised in that said thermoelectric material exhibits a power factor (S2?) of 25 ?W/cmK2 or more at a temperature of 150 K or less.

Abstract: The present invention relates to a method and system for recovery of waste.

Abstract: Methods of processing nanocrystals to remove excess free and bound organic material and particularly surfactants used during the synthesis process, and resulting nanocrystal compositions, devices and systems that are physically, electrically and chemically integratable into an end application.

Abstract: A method for fabricating an IBIIIAVIA-group amorphous compound used for thin-film solar cells is provided. A mixture solution including elements of Group IB, IIIA, VIA or combinations thereof is provided. The mixture solution is heated and filtered. IBIIIAVIA-group amorphous powders are acquired after drying the heated and filtered mixture solution.

Abstract: Disclosed are adhesive coating compositions containing a metal peroxide for producing clear colorless adhesive coatings on substrates, particularly micro particulate substrates. In one preferred embodiment the nanoparticle coatings are chemically active and function at a high level of efficiency due to the high total surface area of the micro particulate substrate. Also disclosed are coated substrates and compositions having nanoparticles bound to a substrate by the coating compositions.

Abstract: Soluble chalcogenido clusters together with transition metal ions and main group elements are shown to provide gels having interconnected, open frameworks. Following supercritical drying with liquid carbon dioxide, the chalcogels may be converted to aerogels. The aerogels possess high internal surface areas with a broad pore size distribution that is dependent upon the precursors used and the aging conditions applied. Some of the gels are encompassed by formulas such as M4[M?4Qx]n, M4[M?2Qy]n, M4[M?Qx]n, M3[M?Qx]n, or Me2[M??Qx]n, where M is a divalent, trivalent, or tetravalent metal ion; M?, M?, and M?? are typically Ge, Sn, P, As, Sb, Mo, or W; and Q is typically S, Se, or Te. Methods of preparing the chalcogenido clusters are also provided.

Abstract: The object of the invention is a process for the synthesis of nanotubes of transition metal dichalcogenides, of fullerene-like nanostructures of transition metal dichalcogenides, of nanotubes of transition metal dichalcogenides, filled with fullerene-like nanostructures of transition metal dichalcogenides, of quasi one-dimensional structures (nanowires, microwires and ribbons) of transition metal oxides and of quasi one-dimensional structures of transition metal dichalcogenides, consisting of fine crystallites of transition metal dichalcogenides. The process is characterized in that the synthesis occurs by the chemical transformation of quasi one-dimensional compounds with a sub-micron diameter, described by the formula M6CyH2, 8.2<y+z<10, where M is a transition metal (Mo, W, Ta, Nb), C is a chalcogen (S, Se, Te), H is a halogen (I).

Abstract: A method for preparing III-VI2 nanoparticles and a thin film of polycrystalline light absorber layers. The method for preparing I-III-VI2 nanoparticles comprises the steps of: (a1) preparing a mixed solution by mixing each element from groups I, III and VI in the periodic table with a solvent; (a2) sonicating the mixed solution; (a3) separating the solvent from the sonicated mixed solution; and (a4) drying the product resulted from the above step (a3) to obtain nanoparticles.

Abstract: A process for producing a perovskite oxide having a composition expressed by the compositional formulas A(B, C)O3, and determined so as to satisfy the conditions (1), (2), and (3), 0.98<TF(PX)<1.01, (1) TF(ABO3)>1.0, and (2) TF(ACO3)<1.0, (3) where each of A, B, and C represents one or more metal elements, the main component of one or more A-site elements is bismuth, the composition of one or more B-site element represented by B is different from the composition of one or more B-site element represented by C, TF(PX) is the tolerance factor of the oxide expressed by the compositional formula A(B, C)O3, and TF(ABO3) and TF(ACO3) are respectively the tolerance factors of the oxides expressed by the compositional formulas ABO3 and ACO3.

Abstract: A thermally stable chalcogenide glass, a process for making the same, and an optical fiber drawn therefrom are provided. A chalcogenide glass having the composition Ge(5?y)As(32?x)Se(59+x)Te(4+y) (0?y?1 and 0?x?2) is substantially free from crystallization when it is heated past the glass transition temperature Tg or drawn into optical fibers. A process for making the thermally stable chalcogenide glass includes purifying the components to remove oxides and scattering centers, batching the components in a preprocessed distillation ampoule, gettering oxygen impurities from the mixture, and heating the components to form a glass melt. An optical fiber formed from the chalcogenide glass is substantially free from crystallization and exhibits low signal loss in the near-infrared region, particularly at wavelengths of about 1.55 ?m.

Abstract: The invention provides a preparation method of Zn1-xCdxA quantum dot capable of emitting white light, in which A is S or S1-ySey; 0<x<1 and 0<y<1. The method includes preparing a sulfur-containing organic solution; mixing a zinc-containing precursor and a cadmium-containing precursor with an organic acid, and dissolving them in a co-solvent to obtain a homogeneous solution; and mixing sulfur-containing organic solution with the homogeneous solution to produce Zn1-xCdxA quantum dot.

Abstract: Methods for forming colloidal metal chalcogenide nanoparticles generally include forming soluble inorganic metal chalcogen cluster precursors, which are then mixed with a surfactant and heated to form the colloidal metal chalcogenide nanoparticles. The soluble inorganic metal chalcogen cluster precursors are generally formed using a hydrazine-based solvent. The methods can be used with main group and transition metals.

Abstract: The method and furnace according to the invention enable a continuous processing of anode slime and are particularly suited to be connected to a process where anode slime is treated by hydrometallurgic methods after roasting. In the method according to the invention, the slime containing valuable metals and selenium is dried, roasted, sulfatized and cooled. The method includes steps to be carried out in succession, in continuous operation, so that the slime forms a slime layer on the conveyor and is conveyed to be treated in successive drying, roasting, sulfatizing and sulfuric acid removal and cooling units.

Abstract: A method for synthesizing a chalcogenide nanoparticle is provided. The method comprises reacting a metal component with an elemental chalcogen precursor in the presence of an organic solvent. The chalcogenide nanoparticles include ternary, binary and/or multinary chalcogenide nanoparticles and the metal component comprises metal halides or elemental metal precursors. The alkylamine solvent has a normal boiling temperature of above about 220° C. and an average particle size of from about 5 nm to about 1000 nm.

Abstract: The present invention provides a process for obtaining fullerene-like metal chalcogenide nanoparticles, comprising feeding a metal precursor (INi) selected from metal halide, metal carbonyl, organo-metallic compound and metal oxyhalide vapor into a reaction chamber (12) towards a reaction zone to interact with a flow of at least one chalcogen material (IN2) in gas phase, the temperature conditions in said reaction zone being such to enable the formation of the fullerene-like metal chalcogenide nanoparticles product. The present invention further provides novel IF metal chalcogenides nanoparticles with spherical shape and optionally having a very small or no hollow core and also exhibiting excellent tribological behavior. The present invention further provides an apparatus for preparing various IF nanostructures.

Abstract: A method of treating value bearing material comprising oxidised or surface oxidised mineral values includes the steps of crushing the value bearing material, contacting the crushed material! with a sulfide solution to sulfide the oxidised or surface oxidised mineral values, and adding ions of a selected base metal to the crushed value bearing material. The value bearing material may comprise oxidised or surface oxidised base metal or precious metal minerals. The crushed value bearing material is prepared as a slurry or pulp comprising from 15% to 40% solids and the remainder comprising water. The sulfide solution preferably comprises a soluble sulfidiser such as sodium hydrosulfide and the base-metal ion solution preferably comprises metal salt of base metals like copper or iron.

Abstract: Fabrication methods for nano-scale chalcopyritic powders and polymeric thin-film solar cells are presented. The fabrication method for nano-scale chalcopyritic powders includes providing a solution consisting of group IB, IIIA, VIA elements on the chemistry periodic table or combinations thereof. The solution is heated by a microwave generator. The solution is washed and filtered by a washing agent. The solution is subsequently dried, thereby acquiring nano-scale chalcopyritic powders.

Abstract: This invention discloses the synthesis of metal chalcogenides using chemical vapor deposition (CVD) process, atomic layer deposition (ALD) process, or wet solution process. Ligand exchange reactions of organosilyltellurium or organosilylselenium with a series of metal compounds having neucleophilic substituents generate metal chalcogenides. This chemistry is used to deposit germanium-antimony-tellurium (GeSbTe) and germanium-antimony-selenium (GeSbSe) films or other tellurium and selenium based metal compounds for phase change memory and photovoltaic devices.

Abstract: A process for synthesizing nanostructures is disclosed. The process involves forming a liquid crystalline template by combining a block copolymer, a first reactant in a polar phase, and a nonpolar phase, then contacting the template with a gas phase composed of a second reactant, under conditions effective to form nanostructures.

Abstract: A method for preparing a CIS (Cu—In—Se) compound includes (S1) producing a plurality of first composite particles having an indium selenide outer layer physically coupled to at least a part of a copper selenide seed particle surface or a plurality of second composite particles having a copper selenide outer layer physically coupled to at least a part of an indium selenide seed particle surface; and (S2) making a CIS compound by thermally treating composite particles selected from the group consisting of the first composite particles, the second composite particles and their mixtures. This method may prevent loss of selenium, which inevitably requires selenium environment, and also improves dispersion, coupling and reaction uniformity for the formation of a CIS compound.

Abstract: The present invention provides method of treating semiconductor surfaces (e.g., CIGS) using various solvents (including ionic solvents and eutectics), and methods preparing photovoltaic cells comprising treated CIGS materials.

Abstract: There is provided a process for preparing compounds of formula M3M1A2. The process comprises reacting a compound of formula M2M1A2 with a compound of formula M3X2, in the presence of at least one coordinating solvent. M1 can be chosen from B3+, Al3+, Ga3+, In3+, Tl3+, Fe3+, and Au3+; M2 can be chosen from Li+, Na+, K+, Cs+, (T1)3Si—, and N(T2)4+; M3 can be chosen from Cu+, Ag+, Li+, Na+, K+, Cs+, Rb+, Fr+, Au+, and Hg+; A can be chosen from S and Se; and X2 can be chosen from Cl?, Br?, I?, F?, CH3COO?, NO3?, and CN?. Such compounds can be used for various purposes in the field of electrochemistry.

Abstract: The present invention generally relates to binary or higher order semiconductor nanoparticles doped with a metallic element, and thermoelectric compositions incorporating such nanoparticles. In one aspect, the present invention provides a thermoelectric composition comprising a plurality of nanoparticles each of which includes an alloy matrix formed of a Group IV element and Group VI element and a metallic dopant distributed within the matrix.

Abstract: A method for making a copper indium chalcogenides powder, includes: (a) reacting a reactant mixture that contains a Cu-containing material, an In-containing material, and a chalcogenides-containing material in a polar organic solvent at an elevated temperature so as to form a precipitate, the polar organic solvent having a molecular structure containing at least one of nitrogen atom and oxygen atom, each of which having at least one lone electron pair, the polar organic solvent further having a dipole moment greater than 2.3 debye; and (b) separating the polar organic solvent from the precipitate.

Abstract: A method for preparing nanowires is disclosed, which comprises the following steps: (a) providing a first precursor solution containing IIB group elements, and a second precursor solution containing VIA group elements; (b) mixing and heating the first precursor solution and the second precursor solution to form a mixed solution; and (c) cooling the mixed solution and filtering the mixed solution to obtain nanowires. The first precursor solution includes compounds of IIB group elements and a surfactant. The second precursor solution includes compounds of VIA group elements. Besides, the surfactant is an organic acid having an aromatic group or a salt thereof.

Abstract: A process for reclaiming spent selenium filter mass containing an inert material. The spent mass is treated with a hydrogen peroxide solution for leaching out selenium content from unspent active substance present in the filter mass to form selenious acid. The filter mass is treated with aqua regia solution to dissolve mercury selenide present in the mass. The aqua regia solution is separated from the mass and isolated. Suitably, the filter mass, which now contains inert carrier material, is transferred with the isolated selenious acid, to production of new selenium filter mass. After partial neutralization of the aqua regia solution, mercury is precipitated out for disposal. Before this, elemental selenium can be separated from the aqua regia solution by adjusting the pH level and used advantageously for production of new filter mass. Thusly, reclaimed selenium content and inert carrier material can be advantageously used for production of new selenium filters.

Abstract: Methods for forming colloidal metal chalcogenide nanoparticles generally include forming soluble inorganic metal chalcogen cluster precursors, which are then mixed with a surfactant and heated to form the colloidal metal chalcogenide nanoparticles. The soluble inorganic metal chalcogen cluster precursors are generally formed using a hydrazine-based solvent. The methods can be used with main group and transition metals.

Abstract: A method is provided for compounding, homogenizing and consolidating compounds. In one embodiment, the charge components are mixed in a controlled addition process, then the newly-formed compound is heated to become totally molten, followed by a rapid quench at room temperature. In an alternate embodiment, the components are supplied with an excess of one component acting as a solvent, heated to dissolve additional components, and then the solvent is separated from the compound to produce homogeneous consolidated compounds. The methods herein are advantageously applied to provide an economical and fast process for producing CdTe, CdZnTe and ZnTe compounds.

Abstract: It is to define the resistivity and the contained amount of impurities of a CdTe system compound semiconductor single crystal and to provide a CdTe system compound semiconductor single crystal which is useful as a substrate for optical devices such as an infrared sensor and the like. In a CdTe system compound semiconductor single crystal for an optical device, a Group 1 (1A) element is included in a range of 5×1014 to 6×1015 cm?3 in the crystal, a total amount of a Group 13 (3B) element and a Group 17 (7B) element included in the crystal is less than 2×1015 cm?3 and less than a total amount of the Group 1 (1A) element, and resistivity of the crystal is in a range of 10 to 104 ?cm.

Abstract: The present invention comprises a method for preparing a mixed oxide catalyst for use in producing acrylonitrile or methacrylonitrile from propane or isobutene by ammoxidation in a gaseous phase via methods of heating or calcining precursor solid mixture to obtain mixed metal oxide catalyst compositions that exhibit catalytic activity.

Abstract: An electrode material for an anode of a rechargeable lithium battery, containing a particulate comprising an amorphous Sn.A.X alloy with a substantially non-stoichiometric ratio composition. For said formula Sn.A.X , A indicates at least one kind of an element selected from a group consisting of transition metal elements, X indicates at least one kind of an element selected from a group consisting of O, F, N, Mg, Ba, Sr, Ca, La, Ce, Si, Ge, C, P, B, Pb, Bi, Sb, Al, Ga, In, Tl, Zn, Be, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, As, Se, Te, Li and S, where the element X is not always necessary to be contained. The content of the constituent element Sn of the amorphous Sn.A.X alloy is Sn/(Sn+A+X)=20 to 80 atomic %.

Abstract: A process for depositing a tellurium-containing film on a substrate is disclosed, including (a) providing a substrate in a reactor; (b) introducing into the reactor at least one tellurium-containing precursor having the formula TeLn or cyclic LTe(-L-)2TeL, wherein at least one L contains a N bonded to one said Te, “n” is between 2-6, inclusive, and each “L,” is independently selected from certain alkyl and aryl groups. The process further includes (c) optionally, introducing at least one M-containing source, wherein M is Si, Ge, Sb, Sn, Pb, Bi, In, Ag or Se, or a combination of any of those; (d) optionally, introducing a hydrogen-containing fluid; (e) optionally, introducing an oxygen-containing fluid; (f) optionally, introducing a nitrogen-containing fluid; (g) reacting the precursor(s) and M-containing source(s), if any, in the reactor with the hydrogen-, oxygen- and/or nitrogen-containing fluid, if any; and (h) depositing a tellurium-containing film onto the substrate.

Abstract: A method is provided for compounding, homogenizing and consolidating compounds. In one embodiment, the charge components are mixed in a controlled addition process, then the newly-formed compound is heated to become totally molten, followed by a rapid quench at room temperature. In an alternate embodiment, the components are supplied with an excess of one component acting as a solvent, heated to dissolve additional components, and then the solvent is separated from the compound to produce homogeneous consolidated compounds. The methods herein are advantageously applied to provide an economical and fast process for producing CdTe, CdZnTe and ZnTe compounds.

Abstract: A radiation detector crystal is made from CdxZn1-xTe, where 0?x?1; an element from column III or column VII of the periodic table, desirably in a concentration of about 1 to 10,000 atomic parts per billion; and the element Ruthenium (Ru), the element Osmium (Os) or the combination of Ru and Os, desirably in a concentration of about 1 to 10,000 atomic parts per billion using a conventional crystal growth method, such as, for example, the Bridgman method, the gradient freeze method, the electro-dynamic gradient freeze method, the so-call traveling heater method or by the vapor phase transport method. The crystal can be used as the radiation detecting element of a radiation detection device configured to detect and process, without limitation, X-ray and Gamma ray radiation events.

Abstract: One object of the present invention is to provide a separation process that enables the efficient separation of selenium, tellurium, and platinum group elements from a material containing selenium/tellurium and platinum group elements. In order to achieve this object, the invention provides a separation process for platinum group elements comprising: a step (A) for treating a material containing selenium/tellurium and platinum group elements with alkali, a step (B) for leaching selenium/tellurium, and a step (C) for separating the platinum group element-containing leaching residue and the selenium/tellurium leachate.

Abstract: The present invention relates to processes for producing nanowires and nanotubes by treating a fiber comprising at least one support material and at least one thermoelectrically active material or a precursor compound of a thermoelectrically active material, to a nanowire comprising at least one thermoelectrically active material and having a diameter of ?200 nm and a length of ?1 mm, to nanotubes comprising at least one thermoelectrically active material and having a diameter of ?200 nm, a wall thickness of ?30 nm and a length of ?1 mm, and to the use of the nanowires or nanotubes for thermoelectric heating, for electricity generation, in sensors or for temperature control.

Abstract: A metal chalcogenide composite nano-particle comprising a metal capable of forming p-type semiconducting chalcogenide nano-particles and a metal capable of forming n-type semiconducting chalcogenide nano-particles, wherein at least one of the metal chalcogenides has a band-gap between 1.0 and 2.9 eV and the concentration of the metal capable of forming p-type semiconducting chalcogenide nano-particles is at least 5 atomic percent of the metal and is less than 50 atomic percent of the metal; a dispersion thereof; a layer comprising the nano-particles; and a photovoltaic device comprising the layer.

Abstract: Methods and compositions of matter are described for assemblies of anisotropic nanoparticles.

Abstract: Methods for forming colloidal metal chalcogenide nanoparticles generally include terming soluble inorganic metal chalcogen cluster precursors, which are then mixed with a surfactant and heated to form the colloidal metal chalcogenide nanoparticles. The soluble inorganic metal chalcogen cluster precursors are generally formed using a hydrazine-based solvent. The methods can be used with main group and transition metals.

Abstract: A Te precursor containing Te, a 15-group compound (for example, N) and/or a 14-group compound (for example, Si), a method of preparing the Te precursor, a Te-containing chalcogenide thin layer including the Te precursor, a method of preparing the thin layer; and a phase-change memory device. The Te precursor may be deposited at lower temperatures for forming a Te-containing chalcogenide thin layer doped with a 15-group compound (for example, N) and/or a 14-group compound (for example, Si). For example, the Te precursor may employ plasma enhanced chemical vapor deposition (PECVD) or plasma enhanced atomic layer deposition (PEALD) at lower deposition temperatures.

Abstract: Soluble chalcogenido clusters together with transition metal ions and main group elements are shown to provide gels having interconnected, open frameworks. Following supercritical drying with liquid carbon dioxide, the chalcogels may be converted to aerogels. The aerogels possess high internal surface areas with a broad pore size distribution that is dependent upon the precursors used and the aging conditions applied. Some of the gels are encompassed by formulas such as M4[M?4Qx]n, M4[M?2Qy]n, M4[M?Qx]n, M3[M?Qx]n, or Me2[M??Qx]n, where M is a divalent, trivalent, or terravalent metal ion; M?, M?, and M?? are typically Ge, Sn, P, As, Sb, Mo, or W; and Q is typically S, Se, or Te. Methods of preparing the chalcogenido clusters are also provided.

Abstract: The invention provides a process which enables, in preparation of acrolein by catalytic gas-phase oxidation of propylene in the presence of molecular oxygen or a molecular oxygen-containing gas or in preparation of acrylic acid by catalytic gas-phase oxidation of acrolein in the presence of molecular oxygen or a molecular oxygen-containing gas, using single kind of atalyst, to suppress occurrence of localized extraordinarily high temperature spots (hot spots) in the catalyst layer and can stably maintain high acrolein or acrylic acid yield for a long time. The process is characterized by use of an oxide catalyst containing molybdenum as an essential component and having relative standard deviation of its particle size in a range of 0.02 to 0.20.

Abstract: A method is provided for compounding, homogenizing and consolidating compounds. In one embodiment, the charge components are mixed in a controlled addition process, then the newly-formed compound is heated to become totally molten, followed by a rapid quench at room temperature. In an alternate embodiment, the components are supplied with an excess of one component acting as a solvent, heated to dissolve additional components, and then the solvent is separated from the compound to produce homogeneous consolidated compounds. The methods herein are advantageously applied to provide an economical and fast process for producing CdTe, CdZnTe and ZnTe compounds.

Abstract: An illumination system, comprising a radiation source and a monolithic ceramic luminescence converter comprising at least one phosphor capable of absorbing a part of light emitted by the radiation source and emitting light of wavelength different from that of the absorbed light; wherein said at least one phosphor is an alkaline earth metal sulfide of general formula AE1-zS1-ySey:Az, wherein AE is at least one earth alkaline metal selected from the group of Mg, Ca, Sr and Ba, 0?y<1 and 0.0005?z?0.2, activated by an activator A selected from the group of Eu(II), Ce(III), Mn(II) and Pr(III). is highly efficient, especially if a blue light emitting diode is used as a radiation source, and provides excellent thermal and spectroscopic properties.

Abstract: There is provided a process for preparing compounds of formula M3M1A2. The process comprises reacting a compound of formula M2M1A2 with a compound of formula M3X2, in the presence of at least one coordinating solvent. M1 can be chosen from B3+, Al3+, Ga3+, In3+, Tl3+, Fe3+, and Au3+; M2 can be chosen from Li+, Na+, K+, Cs+, (T1)3Si—, and N(T2)4+; M3 can be chosen from Cu+, Ag+, Li+, Na+, K+, Cs+, Rb+, Fr+, Au+, and Hg+; A can be chosen from S and Se; and X2 can be chosen from Cl?, Br?, I?, F?, CH3COO?, NO3?, and CN?. Such compounds can be used for various purposes in the field of electrochemistry.

Abstract: This invention generally relates to electrochemical cells utilizing magnesium anodes, new solutions and intercalation cathodes. The present invention is a new rechargeable magnesium battery based on magnesium metal as an anode material, a modified Chevrel phase as an intercalation cathode for magnesium ions and new electrolyte solution from which magnesium can be deposited reversibly, which have a very wide electrochemical window. The Chevrel phase compound is represented by the formula Mo6S8-YSeY in which y is higher than 0 and lower than 2 or by the formula MXMo6S8 in which M is selected from the group comprising of copper (Cu), nickel (Ni), silver (Ag) and/or any other transition metal; further wherein x is higher than 0 and lower than 2.

Abstract: Provided are a phase change layer and a method of forming the phase change layer and a phase change memory device including the phase change layer, and methods of manufacturing and operating the phase change memory device. The phase change layer may be formed of a quaternary compound including an amount of indium (In) ranging from about 15 at. % to about 20 at. %. The phase change layer may be InaGebSbcTed, wherein an amount of germanium (Ge) ranges from about 10 at. %?b?about 15 at. %, an amount of antimony (Sb) ranges from about 20 at. %?c?about 25 at. %, and an amount of tellurium (Te) ranges from about 40 at. %?d?about 55 at. %.

Abstract: A coatable inorganic material is provided, which is suitable for being coated on a substrate in the form of sol-gel solution and then being directly written with thermochemical mode by using a laser beam. The coatable inorganic material is an oxide, in which the chemical element constitution is more than one element selected from Te, Al, Zr, and Ti.