Abstract: A method of preparing metal chalcogenides from elemental metal or metal compounds has the following steps: providing at least one elemental metal or metal compound; providing at least one element from periodic table groups 13-15; providing at least one chalcogen; and combining and heating the chalcogen, the group 13-15 element and the metal at sufficient time and temperature to form a metal chalcogenide. A method of functionalizing the surface of semiconducting nanoparticles has the following steps: providing at least one metad compound; providing one chalcogenide having a cation selected from the group 13-15 (B, Al, Ga, In, Si, Ge, Sn, Pb, P, As, Sb and Bi); dissolving the chalcogenide in a first solution; dissolving the metal compound in a second solution; providing and dissolving a functional capping agent in at least one of the solutions of the metal compounds and chalcogenide; combining all solutions; and maintaining the combined solution at a proper temperature for an appropriate time.

Abstract: Provided are a doped phase change material and a phase change memory device including the phase change material. The phase change material, which may be doped with Se, has a higher crystallization temperature than a Ge2Sb2Te5 (GST) material. The phase change material may be InXSbYTeZSe100?(X+Y+Z). The index X of indium (In) is in the range of 25 wt %?X?60 wt %. The index Y of antimony (Sb) is in the range of 1 wt %?Y?17 wt %. The index Z of tellurium (Te) is in the range of 0 wt %<Z?75 wt %.

Abstract: A process for synthesizing a metal telluride is provided that includes the dissolution of a metal precursor in a solvent containing a ligand to form a metal-ligand complex soluble in the solvent. The metal-ligand complex is then reacted with a telluride-containing reagent to form metal telluride domains having a mean linear dimension of from 2 to 40 nanometers. NaHTe represents a well-suited telluride reagent. A composition is provided that includes a plurality of metal telluride crystalline domains (PbTe)1-x-y(SnTe)x(Bi2Te3)y ??(I) having a mean linear dimension of from 2 to 40 nanometers inclusive where x is between 0 and 1 inclusive and y is between 0 and 1 inclusive with the proviso that x+y is less than or equal to 1. Each of the metal telluride crystalline domains has a surface passivated with a saccharide moiety or a polydentate carboxylate.

Abstract: Agents for surface treatment which can impart excellent corrosion resistance to zinc or zinc alloy products at low cost. The agents for the surface treatment of zinc or zinc alloy products of this invention include at least one water-soluble compound which contains antimony, bismuth, tellurium or tin. Ideally, a nickel salt and/or a manganese salt is also included, and most desirably tannins and/or thioureas are also included. Ideally, the zinc or zinc alloy products which have been immersed and treated in an aqueous solution which contains these agents for surface treatment are immersed in an aqueous solution which includes a sealing treatment agent selected according to the colour of the zinc or zinc alloy product to seal pinholes.

Abstract: A chalcogenide compound synthesis method includes homogeneously mixing solid particles and, during the mixing, imparting kinetic energy to the particle mixture, heating the particle mixture, alloying the elements, and forming alloyed particles containing the compound. Another chalcogenide compound synthesis method includes, under an inert atmosphere, melting the particle mixture in a heating vessel, removing the melt from the heating vessel, placing the melt in a quenching vessel, and solidifying the melt. The solidified melt is reduced to alloyed particles containing the compound. An alloy casting apparatus includes an enclosure, a heating vessel, a flow controller, a collection pan and an actively cooled quench plate. The heating vessel has a bottom-pouring orifice and a pour actuator. The flow controller operates the pour actuator from outside the enclosure. The quench plate is positioned above a bottom of the collection pan and below the bottom-pouring orifice.

Abstract: It is to define the resistivity and the contained amount of impurities of a CdTe system compound semiconductor single crystal and to provide a CdTe system compound semiconductor single crystal which is useful as a substrate for optical devices such as an infrared sensor and the like. In a CdTe system compound semiconductor single crystal for an optical device, a Group 1 (1A) element is included in a range of 5×1014 to 6×1015cm?3 in the crystal, a total amount of a Group 13 (3B) element and a Group 17 (7B) element included in the crystal is less than 2×1015cm?3 and less than a total amount of the Group 1 (1A) element, and resistivity of the crystal is in a range of 10 to 104 ?cm.

Abstract: Method for producing metal oxide nanoparticles. The method includes generating an aerosol of solid metallic microparticles, generating plasma with a plasma hot zone at a temperature sufficiently high to vaporize the microparticles into metal vapor, and directing the aerosol into the hot zone of the plasma. The microparticles vaporize in the hot zone into metal vapor. The metal vapor is directed away from the hot zone and into the cooler plasma afterglow where it oxidizes, cools and condenses to form solid metal oxide nanoparticles.

Abstract: A hydrogen-trapping compound is provided, along with a process for manufacturing the compound, and its uses, wherein the hydrogen-trapping compound is characterized in that it contains at least one metal salt of formula MX(OH), in which M represents a divalent transition element, for example Co or Ni; O represents an oxygen atom; X represents an atom of group 16 of the Periodic Table of the Elements, excluding O, for example a sulphur atom; and H represents a hydrogen atom, and wherein the hydrogen-trapping compound is effective for trapping hydrogen, hydrogen within a material and free hydrogen and is applicable in situations in which hydrogen is evolved and in which it has to be trapped, especially for safety reasons.

Abstract: Methods of producing nanoporous particles by spray pyrolysis of a precursor composition including a reactive precursor salt and a nonreactive matrix salt are provided, wherein the matrix salt is used as a templating medium. Nanoporous aluminum oxide particles produced by the methods are also provided.

Abstract: A method of making nanocrystals involves adding a chalocogen source to a hot solution of a metal-containing non-organometallic compound, such as CdO, in a first ligand solvent, such as TOP, and preferably subsequently cooling the resulting mixture to a lower temperature to grow the nanocrystals at said lower temperature. The method can involve either one ligand or two-ligand systems.

Abstract: Improved solid acid electrolyte materials, methods of synthesizing such materials, and electrochemical devices incorporating such materials are provided. The stable electrolyte material comprises a solid acid in a eulytine structure capable of undergoing rotational disorder of oxyanion groups and capable of extended operation at elevated temperatures, that is, solid acids having hydrogen bonded anion groups; a superprotonic disordered phase; and capable of operating at temperatures of ˜100° C. and higher.

Abstract: The present invention provides methods for synthesis of IV–VI nanostructures, and thermoelectric compositions formed of such structures. In one aspect, the method includes forming a solution of a Group IV reagent, a Group VI reagent and a surfactant. A reducing agent can be added to the solution, and the resultant solution can be maintained at an elevated temperature, e.g., in a range of about 20° C. to about 360° C., for a duration sufficient for generating nanoparticles as binary alloys of the IV–VI elements.

Abstract: A method of preparing metal chalcogenide particles. The method comprising the step of reacting an amine and metal complex precursors. The metal complex precursors comprising a chalcogenide and an electrophilic group. The reaction forming metal chalcogenide particles substantially free of the electrophilic group.

Abstract: A high temperature non-aqueous synthetic procedure for the preparation of substantially monodisperse IV-VI semiconductor nanoparticles is provided. The procedure includes introducing a first precursor selected from the group consisting of a molecular precursor of a Group IV element and a molecular precursor of a Group VI element into a reaction vessel that comprises at least an organic solvent to form a mixture. Next, the mixture is heated and thereafter a second precursor of a molecular precursor of a Group IV element or a molecular precursor of a Group VI element that is different from the first is added. The reaction mixture is then mixed to initiate nucleation of IV-VI nanocrystals and the temperature of the reaction mixture is controlled to provide nanoparticles having a diameter of about 20 nm or less.

Abstract: An electrode material for an anode of a rechargeable lithium battery, containing a particulate comprising an amorphous Sn.A.X alloy with a substantially non-stoichiometric ratio composition. For said formula Sn.A.X, A indicates at least one kind of an element selected from a group consisting of transition metal elements, X indicates at least one kind of an element selected from a group consisting of O, F, N, Mg, Ba, Sr, Ca, La, Ce, Si, Ge, C, P, B, Pb, Bi, Sb, Al, Ga, In, Tl, Zn, Be, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, As, Se, Te, Li and S, where the element X is not always necessary to be contained. The content of the constituent element Sn of the amorphous Sn.A.X alloy is Sn/(Sn+A+X)=20 to 80 atomic %.

Abstract: The present invention provides new amorphous or partially crystalline mixed anion chalcogenide compounds for use in proton exchange membranes which are able to operate over a wide variety of temperature ranges, including in the intermediate temperature range of about 100 ° C. to 300° C., and new uses for crystalline mixed anion chalcogenide compounds in such proton exchange membranes. In one embodiment, the proton conductivity of the compounds is between about 10?8 S/cm and 10?1 S/cm within a temperature range of between about ?60 and 300° C. and a relative humidity of less than about 12%.

Abstract: Thermoelectric material is produced through a process sequence including a liquid quenching, a primary solidification such as a hot pressing or extrusion and an upset forging; although the C-planes of the crystal grains are directed in parallel to the direction in which the force is exerted on flakes during the hot pressing/extrusion, the a-axes are randomly directed; the a-axes are oriented in a predetermined direction through the upset forging; this results in improvement of electric resistivity without reduction in the figure of merit.

Abstract: Tellurium-containing nanocrystallites are produced by injection of a precursor into a hot coordinating solvent, followed by controlled growth and annealing. Nanocrystallites may include CdTe, ZnTe, MgTe, HgTe, or alloys thereof. The nanocrystallites can photoluminesce with quantum efficiencies as high as 70%.

Abstract: A selenating reagent obtained by reacting lithium aluminum hydride with selenium powder in an organic solvent. In addition, a method for preparing a selenating reagent includes reacting lithium aluminum hydride with selenium powder in an organic solvent. Also, a method of preparing a selenium-containing product includes reacting the selenating reagent, prepared as stated, with at least one second compound which may be acyl chloride.

Abstract: A heat treatment chamber (30) is provided comprising a treatment region containing a charge (5) of compound material comprising a plurality of n atomic species, each atomic species being associated with at least one gas species. The chamber (30) is placed in a furnace (7). The chamber has a gas permeable barrier, constituted by a plug (4) and wadding (6), which partially encloses the treatment region. The barrier serves as an effusive hole to inhibit, but not prevent, gas vapour release, thereby to elevate the gas vapour pressure in the treatment region. Application of inert gas through a valve (8) is also used to increase background pressure in the treatment region during heat treatment. The elevated gas pressures present in the treatment region during treatment are measurable in an absorption cell (3) adjacent to the treatment region. It is thus possible to monitor the gas pressures during heat treatment and thereby stop the heat treatment once a desired charge stoichiometry is achieved.

Abstract: Systems and methods for large scale synthesis of germanium selenide glass and germanium selenide glass compounds are provided. Up to about 750 grams of a germanium selenide glass or a glass compound can be synthesized at a time in about eight hours or less. Stoichiometrically proportional amounts of germanium and selenium are placed in an ampoule. A variable may also be placed in the ampoule. The ampoule is heated to above the softening temperature of the glass or glass compound being synthesized. The ampoule is then rocked for a period of time while the temperature is held constant. The temperature of the ampoule is then brought down to above the softening temperature of the glass or glass compound being synthesized and then quenched.

Abstract: A gamma radiation source comprising selenium-75 or a precursor therefore, wherein the selenium is provided in the form of one or more thermally stable compounds, alloys, or mixed metal phases.

Abstract: Nanocrystals are synthesized with a high degree of control over reaction conditions and hence product quality in a flow-through reactor in which the reaction conditions are maintained by on-line detection of characteristic properties of the product and by adjusting the reaction conditions accordingly. The coating of nanocrystals is achieved in an analogous manner.

Abstract: A process for metal purification comprising a first step for heating a feed metal in a feed crucible to generate a vapor of the metal, a second step for directing the vapor into a condensation passageway for vapors, where part of the vapor is condensed to generate a molten condensate, a third step for directing the vapor through the condensation passageway for vapors into a solidification crucible so that the vapor is cooled to solidify said metal in a high-purity form, and a fourth step for returning the molten condensate into the feed crucible.

Abstract: A method of processing a composite material to tailor white light emission of the resulting composite during excitation. The composite material is irradiated with a predetermined power and for a predetermined time period to reduce the size of a plurality of nanocrystals and the number of a plurality of traps in the composite material. By this irradiation process, blue light contribution from the nanocrystals to the white light emission is intensified and red and green light contributions from the traps are decreased.

Abstract: A selenating reagent obtained by reacting lithium aluminum hydride with selenium powder in an organic solvent.

Abstract: A method for forming stable structures which includes identifying compositions having a high probability of forming stable structures using predictive modeling and synthesizing the compositions under high pressure and high temperature conditions to form the stable structures. Preferred stable structures are perovskites having a three-dimensional framework of corner-linked MX6 octahedra. The predictive modeling allows evaluation of structural stabilities of given compositions while providing hypothetical molar volumes. It also estimates the molecular polarizability of the compositions from the atomic polarizabilities of its constituent ions. The predictive modeling also calculates the relative dielectric constant of the stable structures using the Clausius-Mossotti relationship and selects compositions having combinations of ions with complimentary ionic radii and bonding preferences.

Abstract: Compounds are expressed by general formula of AxBC2−y where 0≦x≦2 and 0≦y<1, and have CdI2 analogous layer structures; A-site is occupied by at least one element selected from the group consisting of Li, Na, K, Rb, Cs, Mg, Ca, Sr, Ba, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Zn, Zr, Nb, Mo, Ru, Rh, Pd, Ag, Cd, Hf, Ta, W, Re, Ir, Pt, Au, Sc, rare earth elements containing Y, B, Al, Ga, In, Tl, Sn, Pb and Bi; B-site is occupied by at least one element selected from the group consisting of Ti, V, Cr, Zr, Nb, Mo, Hf, Ta, W, Ir, and Sn; C-site is occupied by at least one element selected from the group consisting of S, Se and Te; the compounds exhibit large figure of merit so as to be preferable for thermoelectric generator/refrigerator.

Abstract: Five combustion exhaust gas treatment systems capable of removing dust and selenium (Se) in combustion exhaust gas and making harmless are proposed: (1) combustion exhaust gas is cooled to 350° C. or less, dust is separated, Se is transformed into insoluble compound, and Se is separated; (2) combustion exhaust gas is cooled to 350° C. or less, dust is separated, Se elution preventive agent is added, and dust is formed into scale; (3) dust in combustion exhaust gas is collected by dust collector, dust is formed into slurry by making use of part of circulation liquid in desulfurization apparatus, and tetravalent Se in dust slurry is transformed into insoluble compound, which is separated into solid and liquid; (4) dust is separated from combustion exhaust gas by dust collector, and it is heated to gasify Se, and is led into desulfurization apparatus, etc.

Abstract: A solid state laser device made from a nonlinear optic quaternary alloy of Silver, Gallium, Selenium and Tellurium semiconductor material or Silver, Gallium, Sulfur and Tellurium semiconductor material. The Tellurium component in each alloy provides quaternary alloying anion modification of an underlying ternary semiconductor crystal and achieves tuning of the birefringence and tuning of the wavelength passband of the semiconductor material. The tuned quaternary alloy enables beam walkoff-free noncritical phase match operation of the laser device including use of a phase match angle supporting optimum use of the material's nonlinear properties, maximized useful length of the material crystal, room temperature wavelength changing operation, significantly increased second order nonlinear susceptibility, a factor of ten reduction in the walk-off angle and photon energy conversion efficiencies several times those usually achieved.

Abstract: Chevrel phase materials are used as thermoelectric materials. The Chevrel phase materials are formed as units, and the units include voids between the units. Those voids may be filled with filling elements. The filling elements can be large elements such as lead, or smaller elements such as metals. Exemplary metals may include Cu, Ti, and/or Fe. Different Chevrel phase materials are discussed, including Mo based Chevrel phase materials and Re based Chevrel phase materials.

Abstract: The present invention provides a clathrate compound which can be used as a thermoelectric material, a hard material, or a semiconductor material. Silicon or carbon are formed into a clathrate lattice, and a clathrate compound is then formed in which specified doping atoms are encapsulated within the clathrate lattice, and a portion of the atoms of the clathrate lattice are substituted with specified substitution atoms. The clathrate lattice is, for example, a silicon clathrate 34 (Si34) mixed lattice of a Si20 cluster including a dodecahedron of Si atoms, and a Si28 cluster including a hexahedron of Si atoms. Suitable doping atoms are atoms from group 1A, group 2A, group 3A, group 1B, group 2B, group 3B, group 4A, group 5A, group 6A, and group 8, and suitable substitution atoms are atoms from group 1A, group 2A, group 3A, group 1B, group 2B, group 3B, group 5A, group 6A, group 7A, group 5B, group 6B, group 7B, and group 8 of the periodic table.

Abstract: Ternary tellurium compounds and ternary selenium compounds may be used in fabricating thermoelectric devices with a thermoelectric figure of merit (ZT) of 1.5 or greater. Examples of such compounds include Tl2SnTe5, Tl2GeTe5, K2SnTe5 and Rb2SnTe5. These compounds have similar types of crystal lattice structures which include a first substructure with a (Sn, Ge) Te5 composition and a second substructure with chains of selected cation atoms. The second substructure includes selected cation atoms which interact with selected anion atoms to maintain a desired separation between the chains of the first substructure. The cation atoms which maintain the desired separation between the chains occupy relatively large electropositive sites in the resulting crystal lattice structure which results in a relatively low value for the lattice component of thermal conductivity (&kgr;g).

Abstract: An object of the present invention is to reduce the etch pit density (EPD) and the full-width-half-maximum (FWHM) value of the double crystal X-ray rocking curve, and to provide a CdTe crystal or a CdZnTe crystal which does not include deposits having Cd or Te and the process for producing the same. After a CdTe crystal or a CdZnTe crystal was grown, while the temperature of the crystal is from 700 to 1050° C., the Cd pressure is adjusted so as to keep the stoichiometry of the crystal at the above temperature. The crystal is left for time t which is determined so that each of a diameter L(r) of the crystal and a length L(z) thereof satisfies the following equation 1: {L(r),(L(z))}/2<{4exp(−1.15/kT)×t}½. Then, when the crystal is cooled, the temperature of the crystal is decreased within a range in which the temperature of the crystal and that of a Cd reservoir satisfy the following equation 2: −288+1.68×TCd<TCdTe<402+0.76×TCd.

Abstract: An aqueous solution, for example, effluent from an off-gas scrubber, is treated to remove metal and metalloid ions by in situ precipitation of ferrous ions by the addition thereto of a ferrous ion-containing solution, salt or other such ferrous ion-containing source and a hydroxyl-yielding base in the presence of the metals and metalloids. The reaction conditions include a temperature of at least about 60° C., and a pH of from about 6 to about 10.

Abstract: A new family of crystalline metal oxide compositions have been synthesized. These compositions are described by the empirical formula: AnNbMxM′yM″mOp where A is an alkali metal cation, ammonium ion and mixtures thereof, M is tungsten, molybdenum, or mixtures thereof. M′ is vanadium, tantalum and mixtures thereof, and M″ is antimony, tellurium and mixtures thereof. M′ and M″ are optional metals. These compositions are characterized by having an x-ray diffraction pattern having at least one peak at a d spacing of about 3.9 Å. A hydrothermal synthesis procedure as well as processes using the composition, e.g., ammoxidation of propane, are also disclosed.

Abstract: A series of alkali metal bismuth or bismuth and antimony, antimony chalcogenides (Te or S) are described. The compounds have a unique combination electrical properties.

Abstract: A new method for improving the mechanical properties and nonlinear optical performance characteristics of gallium selenide crystals (GaSe) is disclosed. A charge of GaSe crystals was doped with indium before being made into a crystal. The indium-doped GaSe crystals have improved physical properties in that they can be cut along the cleave planes and the cleaved surfaces polished without the usual delaminations typically observed in prior art pure GaSe crystals. The indium-doped crystals were tested in a second harmonic generation (SHG) system and found to have nearly twice the SHG efficiency as pure, or undoped, GaSe crystals.

Abstract: A process is provided for removing vapor phase selenium species produced by the combustion of selenium and sulfur-containing fuel of the kind used to generate electric power in conjunction with a flue gas desulfurization process. In one process embodiment the flue gas leaving the combustion system is humidified by the injection of atomized water or a dilute alkaline slurry at a selected location upstream of the flue gas desulfurization system to cool the flue gas from a temperature of about 300.degree. F. to a temperature of about 280.degree. F. so as to enhance the selenium removal efficiency. In another process embodiment the flue gas leaving the combustion system is first humidified to cool the flue gas from a temperature of about 300.degree. F. to a temperature of about 200.degree. F. so as to enhance the selenium removal efficiency, and then an alkaline sorbent material is injected into the humidified flue gas.

Abstract: The present invention is concerned with a method for the substantially selective extraction of tellurium from copper electrorefining slimes. The method comprises maintaining a molar ratio Ag/Se, Ag/S or Ag/Se+S at a value of about 2 or less in the slimes during leaching thereof in an autoclave. The excess of selenium and/or sulphur allows the formation of Ag.sub.2 Se or Ag.sub.2 S, which remains insoluble during autoclave leaching.

Abstract: A selenium-containing aqueous stream may be used as a quenching water stream and optionally a cutting water stream in a delayed coking process to effectuate the removal of selenium from the selenium-containing aqueous stream resulting in the formation of a selenium-coke product. In addition, selenium may be concentrated in selenium-containing stripped sour water streams by recycling the stream in one or more hydroprocessing units and one or more sour water stripper units and subsequently removed by using a portion of the selenium-containing stripped sour water stream as a quenching water stream and optionally a cutting water stream in a delayed coking process.

Abstract: Hydrogen and/or carbon impurities are removed from chalcogenide or chalcoide glasses by the addition of a halide, such as TeCl.sub.4, to the batch composition. During melting of the batch composition, the metal halide reacts with the hydrogen and/or carbon impurities to form a hydrogen halide and/or carbon tetrahalide gas and a metal which becomes incorporated into the chalcogen-based glass. Useful halides include halides of sulfur, selenium, tellurium, polonium, or halides of a metal (such as aluminum, magnesium, zirconium, or a mixture thereof) that forms a stable oxide. Mixed metal halides may also be used. The glass melt is then distilled, outgassed, homogenized, fined, and annealed. An apparatus specially designed for making a fiber preform by the above process is also described. An annealed preform made by this method may be drawn into a low-loss fiber in the 2 .mu.m to 12 .mu.m range.

Abstract: A process for chemical bath deposition of selenide and sulfide salts as films and powders employable as precursors for the fabrication of solar cell devices. The films and powders include (1) Cu.sub.x Se.sub.n, wherein x=1-2 and n=1-3; (2) Cu.sub.x Ga.sub.y Se.sub.n, wherein x=1-2, y=0-1 and n=1-3; (3) Cu.sub.x In.sub.y Se.sub.n, wherein x=1-2.27, y=0.72-2 and n=1-3; (4) Cu.sub.x (InGa).sub.y Se.sub.n, wherein x=1-2.17, y=0.96-2 and n=1-3; (5) In.sub.y Se.sub.n, wherein y=1-2.3 and n=1-3; (6) Cu.sub.x S.sub.n, wherein x=1-2 and n=1-3; and (7) Cu.sub.x (InGa).sub.y (SeS).sub.n, wherein x=1-2, y=0.07-2 and n=0.663-3.

Abstract: The quaternary Zintl material (Et.sub.4 N).sub.4 ?Au(Ag.sub.1-x Au.sub.x).sub.2 Sn.sub.2 Te.sub.9 ! that contains 1-D semiconducting chains composed of four metallic elements is prepared by treating ethylenediamine extracts of a pentanary K--Au--Ag--Sn--Te alloy with Et.sub.4 NI.

Abstract: Alkali metal quaternary chalcogenides and process for the preparation. The chalcogenides have the formula A.sub.x B.sub.y C.sub.z D.sub.n containing (CD.sub.4).sup.4- or (C.sub.2 D.sub.6).sup.4- ions where A is selected from the group consisting of an alkali metal and a mixture of alkali metals, B is selected from the group consisting of mercury, zinc and manganese, C is a metal selected from the group consisting of germanium and tin and D is selected from the group consisting of sulfur and selenium, wherein x, y, z and n are molar amounts which provide non-linear optical transmission properties. These chalcogenides are useful as non-linear optical transmission crystals.

Abstract: A sulfone charge transport agent and a multilayered electrophotographic element in which at least one of said layers includes polymeric binder and the sulfone charge transport agent. The general structure of the charge transport agent is: ##STR1## R is alkyl or cycloalkyl having from 1 to about 10 carbons, or aryl or heteroaryl having a total of carbons and heteroatoms of from 6 to about 12. T is alkyl having from 1 to 4 carbons.

Abstract: A chalcopyrite compound, for instance, CuInS.sub.2 or CuInSe.sub.2, is prepared by subjecting a thin film containing copper metal, indium metal, and an indium compound or a compound which contains both indium and copper, selected from the group consisting of oxides, sulfides and selenides, with heat under a reducing atmosphere containing at least one of the Group VIb element or under an atmosphere containing a reducing compound of at least one of the Group VIb element, thereby converting said thin film into a chalcopyrite compound.

Abstract: Alkali metal quaternary chalcogenides and process for the preparation. The chalcogenides have the formula A.sub.x B.sub.y C.sub.z D.sub.n containing (CD.sub.4).sup.4- or (C.sub.2 D.sub.6).sup.4- ions where A is selected from the group consisting of an alkali metal and a mixture of alkali metals, B is selected from the group consisting of mercury, zinc and manganese, C is a metal selected from the group consisting of germanium and tin and D is selected from the group consisting of sulfur and selenium, wherein x, y, z and n are molar amounts which provide non-linear optical transmission properties. These chalcogenides are useful as non-linear optical transmission crystals.

Abstract: Novel compound semiconductors are of the general formula, X.sub.5 YZ.sub.4, wherein X is a member selected from the group consisting of Cu, Ag and mixtures thereof, Y is a member selected from the group consisting of Al Ga, Tl and mixtures thereof, and Z is a member selected from the group consisting of Se, S, Te and mixtures thereof. Typical of the compound semiconductors are Cu.sub.5 AlSe.sub.4 and Ag.sub.5 AlSe.sub.4. These compound semiconductors are especially useful for making blue to UV light-emitting devices which include n-type and p-type compound semiconductor layers made of the above compound semiconductors.

Abstract: Disclosed are ceramic materials and methods of making the same comprising yttrium, barium, silver, and either selenium or sulfur. Those ceramic materials show changes in magnetic susceptibility at around 373.degree. K. with selenium and 195.degree. K. with sulfur.