Abstract: CIGS absorber layers fabricated using coated semiconducting nanoparticles and/or quantum dots are disclosed. Core nanoparticles and/or quantum dots containing one or more elements from group 13 and/or IIIA and/or VIA may be coated with one or more layers containing elements group IB, IIIA or VIA. Using nanoparticles with a defined surface area, a layer thickness could be tuned to give the proper stoichiometric ratio, and/or crystal phase, and/or size, and/or shape. The coated nanoparticles could then be placed in a dispersant for use as an ink, paste, or paint. By appropriate coating of the core nanoparticles, the resulting coated nanoparticles can have the desired elements intermixed within the size scale of the nanoparticle, while the phase can be controlled by tuning the stoichiometry, and the stoichiometry of the coated nanoparticle may be tuned by controlling the thickness of the coating(s).

Abstract: The system of the present invention includes a conductive element, an electronic component, and a partial power source in the form of dissimilar materials. Upon contact with a conducting fluid, a voltage potential is created and the power source is completed, which activates the system. The electronic component controls the conductance between the dissimilar materials to produce a unique current signature. The system can also measure the conditions of the environment surrounding the system.

Abstract: The present invention provides an electromagnetic shielding gasket and a method for making the same, wherein good electrical conductivity and magnetic diffusivity are achieved by electroplating a layer of Co/Ni alloy according to an appropriate ratio on an open-cell foam, and the gasket can accomplish shielding function for electrical field and magnetic field at the same time.

Abstract: The present method of forming an electronic structure includes providing a tantalum base layer and depositing a layer of copper on the tantalum layer, the deposition being undertaken by physical vapor deposition with the temperature of the base layer at 50° C. or less, with the deposition taking place at a power level of 300 W or less.

Abstract: Method of preparation of surface coating of variable transmittance and an electro-optical layered appliance including the same comprises dispersing of liquid crystal microdroplets in hydrolyzable and polymerizable precursors and applying obtained mixture on a surface by spraying. Applying the material to the surface by spraying is intrinsically related to the synthesis processes because the properties of the surrounding environment (i.e. content of water and acidity, UV radiation) and the chemical reactions that take place during spraying have considerable influence on the properties (i.e. driving voltage, thickness of obtained layer). Obtained layered appliance comprises of a matrix material with dispersed microdroplets of liquid crystal obtained by the described method, electrically conductive transparent electrodes with contacts, a dielectric material, substrate and covering layers.

Abstract: Ink is manufactured by mixing unoxidized metallic particles to a binder. The ink is printed on an object (502) and hardened for forming a conductor. The process is performed in an inert atmosphere or in vacuum for maintaining the electrical conductivity of the conductor (500).

Abstract: In an aspect, a negative electrode for a lithium secondary battery and a method of manufacturing the same is provided. The negative electrode for the lithium secondary battery includes a negative active material layer.

Abstract: An insulated electric conductor having a copper core, a layer of aluminum formed on the copper core, and a second layer of aluminum in the form of a high-purity aluminum is disclosed. The copper core may be a solid core or may be formed from a plurality of copper strands. The layer of aluminum formed over the copper core is at least partially anodized to form an aluminum oxide dielectric layer. The layer of high-purity aluminum may be formed by evaporation deposition, sputter deposition, or co-extrusion. Once the layer of high-purity aluminum is formed, it is anodized. More than two layers of aluminum may be formed over the copper core.

Abstract: A material for providing an electrically conducting contact layer, the material comprising a base material being any one of Ag, Cu, Sn, Ni, a first metal salt of one thereof, or an alloy of one or more thereof. The material further comprises In within a range of 0.01 at. % to 10 at. %, Pd within a range of 0.01 at. % to 10 at. %, and, unless already the base material comprises Sn at a higher amount, Sn within a range of 0.01 at. % to 10 at. %. From such material, a contact layer (6) can be provided that, compared to a coating of only the base material, has improved corrosion resistance and low contact resistance. Also disclosed is: an electrically conducting contact element (2) that comprises a substrate (4) and coated thereon a contact layer (6) comprising the material, a method for providing the contact element (2), and uses of the material as contact layer and target material.

Abstract: An electrically conductive multilayer stack including a first metal oxide layer including titanium oxide, a metal layer on the first metal oxide layer, and a second metal oxide layer including titanium oxide on the metal layer, at least one of the first metal oxide layer and the second metal oxide layer including a first region, a second region on the first region, and a third region on the second region, the first region and the third region each having a higher oxygen concentration than that of the second region is disclosed. Methods of manufacturing an electrically conductive multilayer stack are also disclosed.

Abstract: A three-dimensional (3D) nanoplasmonic structure includes a substrate; a plurality of nanorods formed on the substrate; and a plurality of metal nanoparticles formed on surfaces of the substrate and the plurality of nanorods.

Abstract: A thin film of a first metal or a metal oxide is formed on a substrate. A structure layer of fine protrusions and recesses of the first metal or a hydroxide of the metal oxide is formed by causing the thin film formed on the substrate to undergo a hydrothermal reaction. Thereafter, a metal structure layer of fine protrusions and recesses is formed on the surface of the structure layer of fine protrusions and recesses.

Abstract: Compositions and methods for depositing elemental metal M(0) films on semiconductor substrates are disclosed. One of the disclosed methods comprises: heating the semiconductor substrate to obtain a heated semiconductor substrate; exposing the heated semiconductor substrate to a composition containing a metal precursor, an excess amount of neutral labile ligands, and a supercritical solvent; exposing the metal precursor to a reducing agent and/or thermal energy at or near the heated semiconductor substrate; reducing the metal precursor to the elemental metal M(0) by using the reducing agent and/or the thermal energy; and depositing the elemental metal M(0) film while minimizing formation of metal oxides.

Abstract: A method and article of manufacture of intermixed tunable resistance composite materials. A conducting material and an insulating material are deposited by such methods as ALD or CVD to construct composites with intermixed materials which do not have structure or properties like their bulk counterparts.

Abstract: Some embodiments include methods of forming conductive structures. An electrically conductive material may be deposited with a first deposition method. The first deposition method has a first deposition rate and forms a first portion of a conductive structure. A second portion of the conductive structure may be formed by depositing the electrically conductive material with a second deposition method having a second deposition rate. The second deposition rate may be different from the first deposition rate by at least about a factor of 3. In some embodiments, a region of the conductive structure is utilized as a transistor gate of a DRAM cell. Some embodiments include semiconductor constructions.

Abstract: A tactile sensor includes an insulating support including a first face including a first series of parallel conducting tracks and a second face including a second series of parallel conducting tracks, the insulating support being folded and the second face being disposed opposite the first face. The tactile sensor includes an array of conducting tracks extending in an edge zone intended to be folded, along fold lines. The tactile sensor can, for example, be used in a tactile control screen.

Abstract: A sensor element includes a first conductive electrode having a first conductive member electrically coupled thereto; an absorptive dielectric layer comprising a polymer of intrinsic microporosity; and a second conductive electrode having a second conductive member electrically coupled thereto. The second conductive electrode comprises at least one noble metal, has a thickness of from 4 to 10 nanometers and is permeable to at least one organic vapor. The absorptive dielectric layer is at least partially disposed between the first conductive electrode and the second conductive electrode. A method of making the sensor element, and sensor device containing it, are also disclosed.

Abstract: A method of forming a material over a substrate includes performing at least one iteration of the following temporally separated ALD-type sequence. First, an outermost surface of a substrate is contacted with a first precursor to chemisorb a first species onto the outermost surface from the first precursor. Second, the outermost surface is contacted with a second precursor to chemisorb a second species different from the first species onto the outermost surface from the second precursor. The first and second precursors include ligands and different central atoms. At least one of the first and second precursors includes at least two different composition ligands. The two different composition ligands are polyatomic or a lone halogen. Third, the chemisorbed first species and the chemisorbed second species are contacted with a reactant which reacts with the first species and with the second species to form a reaction product new outermost surface of the substrate.

Abstract: A downhole sensor to detect characteristics in a borehole comprises at least one sensing unit to sense a characteristic in the borehole and a metallic layer covering at least a portion of the sensing unit exposed to an interior of the borehole.

Abstract: The present disclosure provides a hybrid porous material including a porous material including a microporous polymer film or a non-woven fabric, wherein the porous material has an upper surface and a lower surface; and a continuous inorganic coating covering the upper surface, the lower surface, and surfaces of pores within the porous material. The present disclosure also provides a manufacturing method for the hybrid porous material and an energy storage device including the same.

Abstract: A process for depositing a tellurium-containing film on a substrate is disclosed, including (a) providing a substrate in a reactor; (b) introducing into the reactor at least one tellurium-containing precursor having the formula TeLn or cyclic LTe(-L-)2TeL, wherein at least one L contains a N bonded to one said Te, “n” is between 2-6, inclusive, and each “L,” is independently selected from certain alkyl and aryl groups. The process further includes (c) optionally, introducing at least one M-containing source, wherein M is Si, Ge, Sb, Sn, Pb, Bi, In, Ag or Se, or a combination of any of those; (d) optionally, introducing a hydrogen-containing fluid; (e) optionally, introducing an oxygen-containing fluid; (f) optionally, introducing a nitrogen-containing fluid; (g) reacting the precursor(s) and M-containing source(s), if any, in the reactor with the hydrogen-, oxygen- and/or nitrogen-containing fluid, if any; and (h) depositing a tellurium-containing film onto the substrate.

Abstract: An evaporation apparatus that is capable of stably forming a good quality thin film and is highly suitable for mass production is provided. The evaporation apparatus include an evaporation source discharging an evaporation material by heating, a retention member retaining an evaporation object, and a heat shield member that is located between the evaporation source and the evaporation object retained by the retention member, has an opening for passing the evaporation material in a state of vapor phase from the evaporation source to the evaporation object, and shields the evaporation object from part of radiation heat of the evaporation source. The heat shield member is located closer to the evaporation source than to the retention member.

Abstract: The present invention provides a manufacturing method of a semiconductor device that has a rapid film formation rate and high productivity, and to provide a substrate processing apparatus.

Abstract: In a lithium ion secondary battery including a positive electrode, a separator, a negative electrode, and a package body, the negative electrode includes simple substance silicon as a negative electrode active material, and a negative electrode binder, and is doped with lithium, and the following formulas (1) and (2) are satisfied: 1.2?Ma/Mc?1.9??(1) 1.0<Ma/(Mc+MLi)<1.6??(2) wherein an amount of lithium inserted into the negative electrode until the negative electrode reaches a potential of 0.02 V with respect to metal lithium is Ma (a number of atoms), an amount of lithium released from the positive electrode until the positive electrode reaches a potential of 4.3 V with respect to metal lithium is Mc (a number of atoms), and an amount of lithium with which the negative electrode is doped is MLi (a number of atoms).

Abstract: A method for manufacturing a substrate of an analytical sensor and the substrate thus prepared are disclosed.

Abstract: The film formation method comprises the steps of: unrolling and feeding an elongated substrate wound in a roll form from a first roll chamber in a direction from the first roll chamber toward a second roll chamber, using a first surface as a surface for film formation; degassing the fed substrate; forming a first material film on the first surface of the degassed substrate in a first film formation chamber; forming a second material film on the first material film in a second film formation chamber; taking up the substrate in a roll form in the second roll chamber, the substrate having the material films formed thereon; unrolling and feeding the taken up substrate from the first roll chamber in the direction, using a second surface opposite the first surface of the substrate as a surface for film formation; and repeating all the above treatments.

Abstract: The film formation method comprises the steps of: unrolling and feeding an elongated substrate wound in a roll form from a first roll chamber in a first direction from the first roll chamber toward a second roll chamber, using a first surface as a surface for film formation; degassing the substrate fed in the first direction; forming a second material film on the first surface of the substrate in a second film formation chamber; taking up the substrate in a roll form in the second roll chamber, the substrate having the second material film formed thereon; unrolling and feeding the substrate from the second roll chamber in a second direction from the second roll chamber toward the first roll chamber; forming a first material film on the second material film in a first film formation chamber; taking up the substrate in a roll form in the first roll chamber.

Abstract: A process for manufacturing electrodes for electrolysis, including the steps of forming an arc ion plating undercoating layer comprising valve metal or valve metal alloy including a crystalline tantalum component and a crystalline titanium component on the surface of the electrode substrate comprising valve metal or valve metal alloy, by an arc ion plating method; heat sintering the electrode substrate to transform only the tantalum component of the arc ion plating undercoating layer into an amorphous substance; and forming an electrode catalyst layer on the surface of the arc ion plating undercoating layer including the valve metal or valve metal alloy including the tantalum component transformed to the amorphous substance and the crystalline titanium component.

Abstract: A cathode for an electrochemical reactor including a diffusion layer and a catalyst layer. The cathode has bimetallic or multimetallic nanoparticles, dispersed in direct contact with the diffusion layer, at least one of the metals being chromium (Cr) wholly or partly in oxidized form. The cathode is fabricated by depositing the bimetallic or multimetallic nanoparticles on the diffusion layer by DLI-MOCVD in the presence of O2.

Abstract: An adhesiveless copper clad laminate, which does not have defects on a copper film part due to a pin hole generated at the time of forming a base metal layer on an insulating film by dry plating process, has excellent adhesion between the insulating film and the base metal layer and corrosion resistance, and has a copper film layer having high insulation reliability The adhesiveless copper clad laminate is provided by forming a base metal layer directly at least on one plane of an insulating film without having an adhesive in between, and then by forming a copper film layer on the base metal layer, the base metal layer having a film thickness of 3 to 50 nm is formed by dry plating method and mainly contains a chrome-molybdenum-nickel alloy wherein the chrome ratio is 4 to 22 weight %, the molybdenum ratio is 5 to 40 weight %, and the balance is nickel.

Abstract: A unique combination of solution stabilization and delivery technologies with special ALD operation is provided. A wide range of low volatility solid ALD precursors dissolved in solvents are used. Unstable solutes may be stabilized in solution and all of the solutions may be delivered at room temperature. After the solutions are vaporized, the vapor phase precursors and solvents are pulsed into a deposition chamber to assure true ALD film growth.

Abstract: The present invention discloses a color filter by copper and silver film, comprising: a lower copper layer; a lower silver layer formed on the lower copper layer; a medium formed on the lower silver layer; an upper copper layer formed on the medium; and an upper silver layer formed on the upper copper layer.

Abstract: Provided are probes featuring multiple electrodes, which probes have diameters in the nanometer range and may be inserted into cells or other subjects so as to monitor an electrical characteristic of the subject. The probes may also include a conductive coating on at least one probe element to improve the probes' performance. The probes may also be used to inject a fluid or other agent into the subject and simultaneously monitor changes in the subject's electrical characteristics in response to the injection. Related methods of fabricating and of using the inventive probes are also provided.

Abstract: A method of continuously subjecting an elongated substrate to vacuum film formation is disclosed. The method comprises the steps of: feeding a first substrate from a first roll chamber in a first direction from the first roll chamber toward a second roll chamber; degassing the first substrate; forming a film of a second material on the first substrate, in a second film formation chamber; and rolling up the first substrate in the second roll chamber, thereby producing the first substrate, and comprises similar steps to produce a second substrate. In advance of producing the first substrate with the second material film, the first cathode electrode of the first film formation chamber is removed from the first film formation chamber, and, in advance of producing the second substrate with the first material film, the second cathode electrode of the second film formation chamber is removed from the second film formation chamber.

Abstract: A honeycomb structure includes a substantially pillar-shaped honeycomb unit having cells defined by cell walls. The cell walls include silicon carbide particles having a nitrogen-containing layer provided on surfaces of the silicon carbide particles. A method of manufacturing a honeycomb structure includes preparing paste containing silicon carbide particles. The paste is molded to form a honeycomb molded body. The honeycomb molded body is fired in an inert atmosphere containing no nitrogen to obtain a substantially pillar-shaped honeycomb unit having cells defined by cell walls. The honeycomb unit is heated in an environment containing nitrogen to provide a nitrogen-containing layer on surfaces of the silicon carbide particles forming the cell walls.

Abstract: Adhesiveless copper clad laminates wherein a base metal layer is directly formed on at least one side of an insulating film without using an adhesive and a copper conductor layer having a desired thickness is formed on the base metal layer, the adhesiveless copper clad laminates is characterized in that a base metal layer having a thickness of 3 to 50 nm is formed on an insulating film by a dry plating method and a copper film layer is formed on the base metal layer, and the base metal layer mainly contains (1) a vanadium-molybdenum-nickel alloy consisting of 4 to 13% by weight of vanadium, 5 to 40% by weight of molybdenum, and the balance of nickel or (2) a vanadium-chromium-molybdenum-nickel alloy consisting of 4 to 13% by weight of vanadium and chromium in total including at least 2% by weight of vanadium, 5 to 40% by weight of molybdenum, and the balance of nickel.

Abstract: The present invention relates to an RF MEMS switch device comprising: a substrate; a bias electrode positioned on the substrate and supplying bias voltage; a pair of signal electrodes positioned to be spaced-apart each other on the substrate and transmitting an RF signal from one side to the other side; a dielectric layer formed on upper part of the pair of signal electrodes to be overlapped with the pair of signal electrodes; a membrane electrode formed on the dielectric layer to be overlapped with the pair of signal electrodes and the dielectric layer; a bias line connecting between the membrane electrode and the bias electrode; at least one pooling electrode formed to be overlapped with the membrane electrode and having the dielectric layer be interposed therebetween; and a pooling line connecting any one of the pair of signal electrodes and the pooling electrode, and manufacturing method thereof.

Abstract: A method for manufacturing an electrode of an electrochemical element includes: (A) forming an active material layer on a current collector; and (B) providing lithium to the active material layer. The A step and the B step are carried out in continuous space.

Abstract: A flexible multilayer electromagnetic shield is provided that includes a flexible substrate, a thin film layer of a first ferromagnetic material with high magnetic permeability disposed upon the substrate and a multilayer stack disposed upon the first ferromagnetic material. The multilayer stack includes pairs of layers, each pair comprising a polymeric spacing layer and a thin film layer of at least a second ferromagnetic material disposed on the spacing layer. At least one or more of the spacing layers includes an acrylic polymer. Also methods of making the flexible multilayer electromagnetic shield are provided.

Abstract: According to an aspect of the embodiments, a sheet-shaped structure includes a bundle structure that includes a plurality of line-shaped structures of carbon atoms, a covering layer that covers the line-shaped structures in longitudinal directions of the line-shaped structures, respectively, and a filling layer that is disposed between the line-shaped structures covered with the covering layer.

Abstract: Disclosed are an organometallic precursor that may be used in manufacturing a semiconductor device, a thin film having the same, a metal wiring including the thin film, a method of forming a thin film and a method of manufacturing a metal wiring. An organometallic precursor including a central metal, a borohydride ligand and an amine ligand for reducing a polarity of the organometallic precursor may be provided onto a substrate, and may be thermally decomposed to form a thin film on the substrate. The organometallic precursor having a reduced polarity may be provided to a chamber with a constant flow rate, and thus stability and/or efficiency of a semiconductor manufacturing process may be improved.

Abstract: The film forming apparatus includes a chamber 1; a heater 5 for heating a wafer W within the chamber 1; a film forming source vessel 31, provided outside the chamber 1, for accommodating cobalt carbonyl as a film forming source; a line 43 for transporting gaseous cobalt carbonyl from the film forming source vessel 31 to the chamber 1; an exhaust device 23 for depressurizing and exhausting an inside of the chamber 1; a cobalt carbonyl supply unit 38 for supplying the gaseous cobalt carbonyl from the film forming source vessel 31 to the chamber 1 via the line 43; a temperature controller 60 for controlling temperatures of the film forming source vessel 31 and the line 43 to be below a decomposition starting temperature of the cobalt carbonyl; and a CO gas supply unit 37 for supplying a CO gas into the film forming source vessel 31.

Abstract: The invention relates to a method of manufacturing of metal electrodes for electrolytic applications by means of a continuous deposition of a layer of noble metals upon metal substrates by a physical vapour deposition technique.

Abstract: A thermoelectric material includes powders having a surface coated with an inorganic material. The thermoelectric material includes a thermoelectric semiconductor powder and a coating layer on an outer surface of the thermoelectric semiconductor powders.

Abstract: CIGS absorber layers fabricated using coated semiconducting nanoparticles and/or quantum dots are disclosed. Core nanoparticles and/or quantum dots containing one or more elements from group IB and/or IIIA and/or VIA may be coated with one or more layers containing elements group IB, IIIA or VIA. Using nanoparticles with a defined surface area, a layer thickness could be tuned to give the proper stoichiometric ratio, and/or crystal phase, and/or size, and/or shape. The coated nanoparticles could then be placed in a dispersant for use as an ink, paste, or paint. By appropriate coating of the core nanoparticles, the resulting coated nanoparticles can have the desired elements intermixed within the size scale of the nanoparticle, while the phase can be controlled by tuning the stochiometry, and the stoichiometry of the coated nanoparticle may be tuned by controlling the thickness of the coating(s).

Abstract: The microacoustic component has a substrate that has at least one layer (composed of a dielectric or piezoelectric material, and a metallic strip structure. The layer is composed of a dielectric or piezoelectric material and/or the metallic strip structure have/has been produced or can be produced by the atomic layer deposition method.

Abstract: A method for manufacturing a solid-state battery device. The method can include providing a substrate within a process region of an apparatus. A cathode source and an anode source can be subjected to one or more energy sources to transfer thermal energy into a portion of the source materials to evaporate into a vapor phase. An ionic species from an ion source can be introduced and a thickness of solid-state battery materials can be formed overlying the surface region by interacting the gaseous species derived from the plurality of electrons and the ionic species. During formation of the thickness of the solid-state battery materials, the surface region can be maintained in a vacuum environment from about 10-6 to 10-4 Torr. Active materials comprising cathode, electrolyte, and anode with non-reactive species can be deposited for the formation of modified modulus layers, such a void or voided porous like materials.

Abstract: Method of preparation of surface coating of variable transmittance and an electro-optical layered appliance including the same comprises dispersing of liquid crystal microdroplets in hydrolyzable and polymerizable precursors and applying obtained mixture on a surface by spraying. Applying the material to the surface by spraying is intrinsically related to the synthesis processes because the properties of the surrounding environment (i.e. content of water and acidity, UV radiation) and the chemical reactions that take place during spraying have considerable influence on the properties (i.e. driving voltage, thickness of obtained layer). Obtained layered appliance comprises of a matrix material with dispersed microdroplets of liquid crystal obtained by the described method, electrically conductive transparent electrodes with contacts, a dielectric material, substrate and covering layers.

Abstract: A metal vanadium film is used as an extraction electrode contacting with a vanadium oxide or doped vanadium oxide film. The electrode material is adapted for a detector, sensor and optical switch based on a vanadium oxide or doped vanadium oxide film. The metal vanadium film is in favor of reducing the thermal conductivity of the support structure of the array unit. The preparation process of the vanadium film using the metal vanadium as the source material is more easily controlled than that of NiCr film using the NiCr alloy as the source material. The extraction electrode of the present invention easily obtains an excellent metal-semiconductor contact characteristic. The preparation process and patterning process of the metal vanadium film have an excellent technology compatibility with the IC and MEMS manufacturing processes.

Abstract: A touch screen according to an embodiment of the present invention includes: a transparent conductive material deposited on a top surface of a flexible plastic film; and a metal layer vacuum-deposited on the transparent conductive film. According to the embodiment of the present invention, the touch screen capable of providing the excellent flexibility and simplifying the manufacturing process, and the method of manufacturing the same can be provided.