Abstract: A substrate for a magnetic disk having minute semi-spherical raised portions formed over the entire surface by a non-electrolytic plating process, an electrolytic plating process or plating nuclei containing palladium, gold, silver, or copper. The substrate is obtained by comprising steps of forming a Ni--P intermediate layer by Ni--P plating on an aluminum substrate, finishing the Ni--P intermediate layer, dipping the substrate in a plating solution to effect palladium plating to form a Pd plating layer and forming a Ni--P plating layer to form minute semi-spherical raised portions over an entire surface of the Pd plating layer.

Abstract: A metal-ceramic composite body is prepared by impregnating a porous ceramic preform with a molten metal. A preform (3, 15), a crucible (7) containing molten metal (6), and a channeling bundle (8) of filaments are set such that one end of the bundle (8) is disposed above the molten metal (6) in the crucible (7) and the other end of the bundle (8) is disposed in contact with the preform (3, 15). The crucible (7) is moved up until the bundle one end is immersed in the molten metal (6) whereby the molten metal (6) is channeled to the preform (3, 15) through the filaments of the bundle (8) for impregnating the preform (3, 15) with the molten metal. The crucible (7) is moved down until the bundle one end is withdrawn from the molten metal (6) whereby supply of the molten metal to the preform (3, 15) is interrupted.

Abstract: A method and apparatus for treating a freshly metallized substrate in which a metal substrate is passed through a bath of molten metal for the purpose of applying a coating thereto while a treating gas containing a reducing gas, a non-oxidizing gas or combination thereof is provided at the region where the metallized substrate exits the molten metal bath to thereby at least reduce oxidation of the metallized substrate and the surface of the molten metal bath.

Abstract: The thin film electrode is prepared by first forming a bath of a molten lithium material in a vessel. The molten lithium containing material is selected among lithium, a lithium alloy and lithium containing compounds. A substrate is coated with a thin layer of the molten material by transporting the substrate below the vessel where it contacts the molten lithium material.

Abstract: Disclosed is a process of surface hardening for titanium alloys comprising .alpha. phase by carburization in a molten salt which consists of carbonate as the carbon-yielding agent with electrolysis within 790.degree. C. to 930.degree. C. The hardness within the effective carburizing layer is influenced by bath temperature, applied current density and carburizing period. The major hardening effect is due to the formation of solid solution of carbon in .alpha.-Ti.

Abstract: A coating control system is provided enabling continuous operations, free of interruption for coating control purposes, while achieving desired coating weight and thickness profile for the various gages, widths and coating specifications encountered on a given continuous strip production line. In each of a pair of elongated pneumatic dies, a pressurized gas jet is controllably shaped and directed by flow-control means internally-mounted of each pneumatic die to impinge against its respective substrate coated surface with its major directional component of force being controlled to be perpendicularly transverse to the travel path of the coated strip across its full width. Adjustment of such internally-mounted means is coordinated with control of gas pressure supply and/or adjustment of die positioning means to maintain desired coating weight and coating profile across the width of the strip.

Abstract: Segmented waveguides for wavelength conversion (e.g., waveguides comprising alternating sections of crystalline substrate having the formula K.sub.1-x Rb.sub.x TiOMO.sub.4 where x is from 0 to 1 and M is P or As and sections of substrate material in which cations of said substrate have been partially replaced) and devices and processes employing segmented waveguides for wavelength conversion are disclosed wherein a periodic structure along the waveguide provides a Bragg reflection having a wavelength essentially equal to the wavelength of the input wave used for wavelength conversion. Also disclosed is a process for preparing a channel waveguide for a wavelength conversion system wherein areas along a portion of a crystal substrate surface used for forming the desired channel are alternately masked and unmasked during cation replacement by immersion in a molten salt.

Abstract: A diamond, ceramic, metal, or metal alloy surface is coated with molten Csub.3. The coated surface is then heated in air at a temperature of from about 200.degree. C. to 250.degree. C. until the molten CrO.sub.3 coating is converted into a black, powdery adherent coating of CrO.

Abstract: A thin-film seimpermeable composite membrane employs the reaction product of N-alkyl phenylenediamine or N,N'-dialkyl phenylenediamine and a poly acyl halide, such as trimesoyl chloride. Preferably the membrane is post-treated with an acid solution followed by an aqueous solution of polyvinyl alcohol and a buffer and/or base to improve its physical properties.

Abstract: A silicon-carbide sintered article prepared by permeating molten silicon into a carbon compact of elemental carbon, wherein Lc(002), which indicates a length of a domain in the direction perpendicular to the C(002) surface of elemental carbon in the carbon compact, is up to 1000 angstrom. The resulting article includes silicon carbide, silicon, and up to about 1 percent by weight of residual elemental carbon based on the sum of the silicon carbide and the silicon.

Abstract: A shallow vessel (50,52) for being horizontally disposed when containing a molten metal or metal alloy (66) for meniscus coating one side of a clean metal strip (34A) when the strip is moved vertically past one side of the vessel. The vessel includes a shell (68) such as austenitic stainless steel, a refractory lining (70), a molten metal departure lip (72) mounted on the upper surface of the side of the vessel, a spirally shaped induction coil (64) for maintaining the molten metal above its melting point and a flux concentrator (74). The induction coil is positioned below the refractory lining and the flux concentrator is positioned below the induction coil. The induction coil and the flux concentrator underlie the area occupied by the molten metal.

Abstract: A Zn-Ni alloy having a high Ni content is used for supplying Ni.sup.2+ and Zn.sup.2+ ions into an acidic plating bath and for supplying Ni and Zn into a hot dip galvanizing bath. This alloy is characterized by being produced by using a flux consisting of a fused-salt former, which forms a salt having a melting temperature of 700.degree. C. or less, and Na.sub.2 B.sub.4 O.sub.7 and occasionaly additionally Na.sub.2 CO.sub.3. By using the inventive alloy, the bath can be quickly prepared, and Zn and Ni can be supplied to the bath without leaving the undissolved residue.

Abstract: The present invention relates to a novel process for forming metal matrix composite bodies. Particularly, an infiltration enhancer and/or an infiltration enhancer precursor and/or an infiltrating atmosphere are in communication with a rigidized filler material or a rigidized preform, at least at some point during the process, which permits molten matrix metal to spontaneously infiltrate the rigidized filler material or rigidized preform. Such spontaneous infiltration occurs without the requirement for the application of any pressure or vacuum.

Abstract: Methods and apparatus for improving fretting resistance of zirconium alloy components formed into a shape for use in a nuclear reactor are disclosed in which at least a portion of the outer surface of a component is reacted with material selected from the group consisting of carbon, nitrogen, oxygen and combinations of the foregoing at a temperature below about 700.degree. C. to form a wear resistant layer on the surface of the component.

Abstract: There is disclosed methods for producing self-supporting ceramic matrix and ceramic matrix composite bodies by batch, semi-continuous, and continuous processes utilizing the directed oxidation of a molten parent metal with an oxidant to form an oxidation reaction product which may embed filler material.

Abstract: A method for forming a carbide coating of Group IVA, VA and VIA transition metals and their alloys. The metal to be coated is heated in a bath of molten alkali or alkaline earth metal containing carbon. There is also provided a method for preparing a metal surface for carburization by heating the metal in a nitrogen-containing atmosphere.

Abstract: A method of manufacturing plated hollow metallic blocks for further processing into seamless tubes of the type in which a body is immersed one or more times into a melt includes: protecting the inner surfaces of a hollow body of plating material against the admission of a melt of support material during the immersion of the hollow body in the melt of support material; immersing such hollow body formed of plating material into the melt of support material; removing the hollow body from the melt of support material; and crystallizing a layer of support material on the outer surface of the hollow body.

Abstract: A plate-like material is rounded in the form of a cylinder so as to form a main body of a commutator to which an end of a winding for an armature coil of an electric motor is electrically connected, and both ends of the plate-like material are opposed to each other so as to define a joint portion therebetween. When a molten soldering material is introduced into the joint portion and solidified therein, the joint point is closed by the soldering material, thereby making it possible to mold the main body of the commutator, which is shaped substantially in the form of a jointless cylinder. The commutator can be easily fabricated and the manufacturing cost thereof can also be reduced as compared with a case where the main body of the commutator is fabricated from a pipe-shaped material. Since the joint portion can reliably be closed, resin used to charge the inside of the main body of the commutator therewith at a subsequent step can be prevented from extruding toward the outside of the main body.

Abstract: Methods of improving the thickness and characteristics of galvanizing processes are disclosed. Several methods are disclosed which promote growth of the .zeta. layer in a double dipping galvanizing process. In one process a metal article is dipped in a molten-zinc bath at 430.degree.-480.degree. C. The article is then air-cooled or semi-air-cooled before it is dipped in a molten zinc bath containing no less than 0.1% aluminum at 390.degree.-460.degree. C. In another method, after molten-zinc-plating a metal article at 480.degree.-500.degree. C., the article is plated in a molten zinc bath containing no less than 0.1% of aluminum at 390.degree.-460.degree. C. In a third method, the surface of a metal article is blasted to form a surface having a roughness of at least 20 .mu.m before plating the article in a molten-zinc bath at 430.degree.-480.degree. C. The article is then plated in a molten zinc bath containing no less than 0.1% of aluminum at 390.degree.-450.degree. C.

Abstract: A predetermined pattern of a dielectric polymer is formed on a substrate from a mixture of prepolymers which are the ethers of the oligomeric condensation product of (a) dihydric phenol and formaldehyde and (b) a dialdehyde and 3 to 4 moles of a phenol.

Abstract: In the operation of a hot metallizing furnace for lengths of metal, in particular metal strip, in which the length of metal to be coated is passed from above through the upper zone of a smelt of a coating material located in a smelt container, the smelt container can be heated by means of an induction coil made up of partial coils arranged axially on top of one another. During hot metallizing the upper partial coil(s) is/are connected to a medium frequency source of electricity in a single-phase manner. For the removal of the deposits which accumulate in the lower area of the smelt vessel, the lower partial coil(s) is/are connected to a three-phase current mains frequency source of electricity. The agitated deposits are then removed from the smelt using a collecting vessel.

Abstract: Titanium and titanium alloy substrates are provided with a dense coating of a titanium silicide. The titanium silicide coating substantially increases the oxidation resistance of the substrate. The siliciding method includes the steps of: Forming a substantially molten pool of a siliciding alloy; contacting the substrate with the siliciding alloy; maintaining the substrate in contact with the siliciding alloy at a temperature at or above a minimum predetermined temperature to form a titanium silicide coating on the substrate; and separating the coated substrate from the siliciding alloy. The siliciding alloy includes a minimum effective concentration of silicon and a lithium metal flux.

Abstract: An arrangement for solder-coating respective end portions of elongated components in a molten solder bath includes a fixture to be loaded with the components. This fixture includes at least one supporting wall that is capable of maintaining the fixture afloat in a predetermined position on an upper surface of the molten solder bath even when the fixture is fully loaded. The supporting wall has at least one opening through which one of the end portions of a respective component passes into the molten solder bath to a depth necessary for the molten solder to coat the respective end portion to the desired extent when the fixture floats in its predetermined position on the molten solder bath.

Abstract: A method of forming patterns for providing satisfactory pattern shapes of high resolution and high sensitivity is disclosed. A resin film comprising hydroxyl groups is formed on a substrate. Deep UV light selectively irradiates the resin film using a desired mask under nitrogen atmospherre. The surface of the non-exposed portion is selectively silylated by hexamethyldisilazane followed by dry development using reactive ion etching comprising O.sub.2 gas. In accordance with this method, photo irradiation is carried out under inert gas atmosphere so that crosslinking reaction of the resin film proceeds significantly, with the hydroxyl groups concentration greatly reduced. As a result, there is selectivity in silylation reaction between the exposed portion and the non-exposed portion. The exposed portion and the non-exposed portion is precisely distinguished by dry development. Accordingly, resist patterns of high resolution can be obtained.

Abstract: The invention relates to a developing solution of polydimethyl glutarimide containing acetone, ethyl alcohol, or propyl alcohol and, water, and alkali, and a pattern forming method using the same. According to the invention, a finer pattern than before may be formed by using PMGI resist film. At the same time, a liftoff process excellent in dimensional controllability and high in reliability than in the prior art will be realized. Besides, in the wet etching process of using the two-layer resist pattern of the invention as the mask on the GaAs substrate, since the adhesion of the lower layer resist to the substrate is superior, the recess width when etching the substrate can be stably controlled, so that a device of high performance may be obtained.

Abstract: A reaction vessel comprising (1) a porous ceramic structure having intercecting, open pores and (2) silver metal coating the inner ceramic surfaces of the reaction vessel and filling the interconnecting, open pores to form a strong bond between the porous ceramic structure and the silver coating.The reaction vessel can be produced by(1) coating the inner surface and infiltrating the continuous, open pores of an unglazed porous ceramic structure (or vessel) with molten AgNO.sub.3 ;(2) decomposing the AgNO.sub.3 to silver metal; and then(3) repeating steps (1) and (2) until all the pores are filled with silver metal.

Abstract: A predetermined pattern of a dielectric polymer is formed on a substrate from a prepolymer which is an ether of the oligomeric condensation product of a dihydric phenol and formaldehyde having the formula ##STR1##

Abstract: There is disclosed methods for producing self-supporting ceramic matrix and ceramic matrix composite bodies by batch, semi-continuous, and continuous processes utilzing the directed oxidation of a molten parent metal with an oxidant to form an oxidation reaction product which may embed filler material.

Abstract: A predetermined pattern of a dielectric polymer is formed on a substrate from a mixture of prepolymers which are ethers of the reaction products of (a) a dicyclopentadiene and a phenol and (b) a dialdehyde and 3 to 4 moles of a phenol.

Abstract: A phototreating method comprises the steps of introducing a photoreactive gas into a chamber housing a workpiece, emitting first light substantially perpendicularly to a surface of the workpiece, and emitting second light substantially perpendicularly to the surface of the workpiece simultaneously with or after radiation of the first light. The surface of the workpiece is coated utilizing a photochemical reaction of the photoreactive gas caused by radiation of the first light and the second light.

Abstract: This invention describes methods for altering a substrate in a fine line image pattern using microlithographic processes including formation of a metal mask over a polymer coating to protect the coating during dry development of the same. A substrate is first coated with a polymer suitable for complexing noble metal compounds. The substrate is then complexed with a noble metal compound, such as by contact with a palladium salt, selectively irradiated to form the desired conductor pattern, and then etched so that the desired pattern remains. The substrate is subsequently placed in an electroless plating bath to form a metal mask. Alternatively, before applying the noble metal compound, a substrate immersed in a polymer solution suitable for complexing a noble metal compound can be selectively irradiated to selectively deposit polymer on the substrate, followed by applying a noble metal compound and electroless plating to form the desired mask.

Abstract: Apparatus for non-planar treatment of a workpiece utilizing exposure beam lithography includes a vacuum chamber, an exposure beam generator such as an electron beam generator disposed in the chamber for directing a beam towards a work location, a chuck disposed in the chamber for holding and positioning the workpiece at the work location, a rotary motorized stage disposed in the chamber and responsive to first control signals for selectively rotating the chuck, and thus the workpiece, to thereby expose different areas of the workpiece to the beam, and a linear motorized stage disposed in the chamber on which the rotary stage is mounted, said linear motor being responsive to second control signals for selectively moving the rotary stage and thus the chuck and workpiece in a linear direction which is generally parallel with the axis of rotation of the rotary stage. The workpiece is thus exposed over additional areas by operation of the linear stage.

Abstract: Metal is deposited in lines of submicron width by scanning a focused ion beam along a substrate in the presence a vapor of a precursor platinum compound. High deposition rates and steep walls may be obtained by milling a cavity or trench with the focused beam and then locally applying the precursor vapor while scanning of the beam continues. Platinum containing features deposited in this way extend horizontally between wires, or vertically between layers to form conductive interconnects in integrated circuits, and also form pattern repairs in x-ray masks. The platinum chemistry is compatible with silicon wafer processing.

Abstract: A positive type fine resist pattern can be formed at a high sensitivity at a high precision by using, as a resist film for a di-layer resist, a mixture or alternating copolymer of a silicon-containing resin and a polysulfone.

Abstract: There is disclosed a dyed, spin-on glass composition with a high carbon content for use in providing antireflective planarizing layers on substrates such as semiconductor silicon wafers. These layers can be used as hard masks by etching patterns therein. These hard masks can be used in multilayer resists and in making lithography masks. Methods for producing these hard-masks are also provided.

Abstract: A member is prepared by forming a magnetic surface layer on a magnetic base member having a different composition from the surface layer. A laser beam is radiated onto the member so as to fuse the member and the surface layer, thereby forming a fused portion having magnetic properties. A modified portion is formed in a portion of the fused portion corresponding to the surface layer such that this portion has different permeability from other portions of the surface layer.

Abstract: A process for controlling an oxygen content of a non-superconductive or superconductive oxide is provided, in which a beam of particles such as ions, electrons or neutrons or an electromagnetic radiation is applied to the non-superconductive or superconductive oxide of a perovskite type such as YBa.sub.2 Cu.sub.3 O.sub.7-x, thereby increasing or reducing the oxygen content of the oxide at the sites of oxygen in the crystal lattice of the oxide. Furthermore, a superconductive device such as a superconductive magnet, superconductive power transmission wire, superconductive transformer, superconductive shield, permanent current switch and electronic element is made by utilizing the process for controlling the oxygen concentration of the superconductive oxide.

Abstract: A process for producing a monomolecular built-up film of monomolecular layers of a silane surfactant is described. In the process, the silane surfactant is chemically adsorbed on a hydrophilic surface of a substrate and is subjected to irradiation of a high energy beam or plasma treatment in an active gas atmosphere to activate the monomolecular layer. This activated layer is further adsorbed with the silane surfactant to form a built-up film. The beam irradiation or plasma treatment may be effected in a desired pattern. The beam irradiation or plasma treatment and the further adsorption are repeated until the desired number of the monomolecular layers is obtained.

Abstract: In one method, a base for supporting a cured object is brought into close contact with or close to an aperture of a container so as to remove the bubbles therebetween. When one layer is formed, parts of the layer may be successively formed, wherein the base is moved back and forth to separate each part. Also, the aperture or container with the aperture may be inclined relative to the base to separate the layer from the aperture.

Abstract: A system and method whereby the uniformity of the silylating agent throughout the reaction chamber and primarily at the surface of the wafer is significantly improved to provide a significant improvement in the line width uniformity. In accordance with a first embodiment of the invention, this is accomplished by stagnant silylation wherein the silylating agent is introduced into the reaction chamber and the reaction chamber is then sealed during the entire time required to carry out the silylation. The advantage of this approach is optimum uniformity since once equilibrium has been reached, there is no net change of flow or pressure of the silylating agent across the wafer. Another advantage is reduction in the total consumption of the silylating and carrier gases. In accordance with a second embodiment of the invention, the silylating agent flows laminarly across the surface of the wafer to provide uniformity of the silylating agent at the wafer surface.

Abstract: A predetermined pattern of a dielectric polymer is formed on a substrate from a prepolymer which is an ether of the reaction product of a dicyclopentadiene and a phenol.

Abstract: A process for applying a metal coating 11 to a metal strip substrate 2 by preheating the casting surface in a non-oxidizing atmosphere and maintaining a casting surface temperature T.sub.s below the solidus temperature of the metal coating material, passing the casting surface through a melt pool 9 of the metal coating material at a pool temperature at least 25.degree. C. in excess of its melting temperature to deposit a melt layer 21 at a casting temperature T.sub.c, and simultaneously rapidly cooling the metal strip substrate from the back surface to solidify the melt layer to an adherent solid coating, wherein the surface temperature T.sub.s is less than about 20 percent (in .degree.K.) below the casting temperature T.sub.c.The process is particularly useful when coating metal strip with an alloy of limited solubility metals.

Abstract: A focused ion beam is irradiated on a predetermined area of a substrate on which a film is to be formed, and a vapor stream of film-forming depositable material is directed onto a localized area of the substrate which is being irradiated with the focused ion beam to convert the film-forming material to a film deposit on the predetermined area of the substrate. The process can be used to repair white-spot defects in masks and to otherwise deposit films having sharply defined edges and widths in the submicron range.

Abstract: This invention is directed to a process of protecting galvanized metal from white rust corrosion which comprises treating the galvanized metal, i.e., zinc-containing coating, at a temperature above about 125.degree. C. with at least one silica compound.

Abstract: An optical wave guide is formed by implanting at least two ionic species capable of forming an oxide, a nitride or a halide into the surface of a substrate.

Abstract: The invention relates to a dry method for depositing a material on a substrate having nucleating sites for the material which includes deposition of a material in the vapor phase on the substrate and simultaneous ablation of the substrate by ablation methods for controlled removal of the nucleating sites from the substrate. The removal of the nucleating sites is controlled to minimize or selectively prevent coating of the substrate by the material. The method can be used to form material patterns on the substrate such as electrical circuits or for adhering material to a substrate that is difficult to metallize such as organic polymers or ceramics.

Abstract: Light from a Q-switched laser passes through a metal-containing gas and through a field oxide of an integrated circuit structure. The laser light is preferentially absorbed by an underlying substrate. The substrate, but not the oxide, is heated above a threshold temperature that allows rapid chemical vapor deposition of metal through a relatively deep via hole in the oxide. The oxide has low thermal conductivity. The upper portions of the via hole walls are not heated enough to allow deposition of metal thereon. The via hole therefore can be uniformly filled by deposition of the metal on the bottom of the via hole, with no obstruction or shadowing from buildup of deposited metal on the upper wall portions of the via hole.

Abstract: In the gas jet wiping of galvanized wire strip or tube the gas jet wiping nozzle and, preferably a reactive gas containment vessel used for modifying the surface coating on the wire, are made in two or more non-annular parts which when abutted together form an annulus. The parts may be releasably held together in their abutted annular form until the wire, strip or tube requires to be rethreaded, then the parts can be separated from one another transversely of the direction of travel of the wire, strip or tube through the nozzle or containment vessel. The threading of the wire, strip or tube through an annular nozzle or containment vessel is thereby avoided.

Abstract: The critical current density J.sub.c of a superconductive oxide film can be tailored, without substantial change in the critical temperature T.sub.c (R.dbd.0), by introduction of radiation damage into the superconductor. Exemplarily, this is done by exposure to energetic (e.g., 1 MeV) ions. The ability to tailor J.sub.c permits optimization of SQUIDS and other thin film devices, and makes it possible to produce superconductive interconnects that comprise "fuses" or current limiters.

Abstract: A method for manufacturing a precursor wire for a CFRM material, which comprised a continuous carbon fiber bundle of carbon filaments as a reinforcement and a metal as a matrix. In a pretreatment process, the fiber bundle with a sizing agent adhered thereto is passed through an inert atmosphere at a temperature in the range of from 350.degree. to 800.degree. C., thereby thermally decomposing the sizing agent, the chemical structure of the sizing agent including ether linkages, and a residue of thermal decomposition containing the ether linkages is left on the surface of each single filament. In a chemical vapor deposition process, a material gas containing a titanium compound and a boron compound and a reducing gas containing zinc are caused to act simultaneously on the fiber bundle at a temperature in the range of from 700.degree. to 800.degree. C.