Abstract: A production method for a glass roll includes a start preparation step (S1) of feeding-out a first lead film (LF1) coupled to a starting end portion (GFa) of a first glass film (GF1) from an unwinding device (3) and allowing a winding device (8) to wind the first lead film (LF1 after passing of the first lead film (LF1) through a thermal film-forming device (4),). The start preparation step (S1) includes a temperature increasing step of causing the thermal film-forming device (4) to be increased in temperature to a film-forming temperature. The first glass film (GF1) reaches the thermal film-forming device (4) before the thermal film-forming device (4) is increased in temperature to the film-forming temperature.

Abstract: The present invention discloses a heat dissipation table made of an alloy material and with a special waterway design, comprising a sample placing table, a graphene heating structure abutted against the sample placing table, a heat dissipation structure abutted against the graphene heating structure and a protective cover for wrapping the heat dissipation structure. The heat dissipation structure comprises a heat dissipation table abutted against the graphene heating structure and a heat dissipation pipeline communicated with the heat dissipation table; a water pipe through groove is formed in the middle part of the heat dissipation table; and the heat dissipation pipeline is embedded into the water pipe through groove. A plurality of waterway annular grooves are formed in the heat dissipation table and communicated with the water pipe through groove. According to the present invention, the demand of diamonds on heat dissipation with high power can be met, and the cost is low.

Abstract: The invention relates to an apparatus for the vapor deposition of a coating on optical articles, comprising a distribution mask (32) for controlling the vapor deposition of a coating on optical articles that is positioned in the path of some of the molecules emitted by said emitting source in the direction of the rotatable support for optical articles. The distribution mask (32) is fitted with at least one arm (34) positioned so as to mask at least one partial zone (16) of an individual housing (28) on a portion of the revolution turn, this masked partial zone (16) comprising the center of the individual housing (28).

Abstract: A method of forming a microphone device includes: forming a through-hole in a substrate wafer; providing a second wafer; bonding the second wafer to the substrate wafer; and forming a top electrode over a first surface of a single-crystal piezoelectric film of the second wafer. The second wafer may include the single-crystal piezoelectric film. The single-crystal piezoelectric film may have a first surface and an opposing second surface. The second wafer may further include a bottom electrode arranged adjacent to the second surface, and a support member over the single-crystal piezoelectric film. The through-hole in substrate wafer may be at least substantially aligned with at least one of the top electrode and the bottom electrode.

Abstract: An ion guide may comprise a set of plate electrodes, each plate electrode having a plurality of apertures formed therethrough. The set of plate electrodes are spatially arranged such that a relative positioning of each plurality of apertures of a respective plate electrode of the set of plate electrodes and respective adjacent plate electrodes of the set of plate electrodes defines a continuous ion flight path through the respective plurality of apertures of each plate electrode of the set of plate electrodes. The continuous ion flight path has a helical-based and/or spiral-based shape.

Abstract: A fabrication method of a bulk acoustic wave (BAW) resonator includes: sequentially forming a buffer layer, a piezoelectric layer, and a first electrode on a temporary substrate; forming a first dielectric layer on the piezoelectric layer and covering the first electrode; forming a trench in the first dielectric layer; forming a second dielectric layer on the first dielectric layer and in the trench; forming a third dielectric layer on the second dielectric layer and filling in the trench; forming a bonding layer on the third dielectric layer; bonding a resonator substrate to the third dielectric layer via the bonding layer; removing the temporary substrate and the buffer layer to expose a surface layer of the piezoelectric layer; removing the surface layer of the piezoelectric layer; forming a second electrode on the piezoelectric layer; and removing a portion of the first dielectric layer surrounded by the trench to form a cavity.

Abstract: Generators and methods for igniting a plasma in a plasma chamber are disclosed. The generator includes an ignition profile generator that includes a data interface configured to receive a voltage value and a time value for each of N data points and an ignition data generator configured to create an ignition profile from the N data points. The generator also includes an ignition profile datastore to store the ignition profile and a waveform generator configured to apply a waveform with the ignition profile to an output of the generator.

Abstract: There is provided a cluster-supporting porous carrier having improved heat resistance and/or catalytic activity, and a method for producing it. The cluster-supporting porous carrier of the invention has porous carrier particles (20) such as zeolite particles, and metal oxide clusters (16) supported within the pores of the porous carrier particles. The method of the invention for producing the cluster-supporting porous carrier includes providing a dispersion containing a dispersing medium (11) and porous carrier particles dispersed in the dispersing medium, forming positively charged metal oxide clusters (16) in the dispersion, and supporting the metal oxide clusters within the pores of the porous carrier particles (20) by electrostatic interaction.

Abstract: A plasma source (100), comprises an outer face (10) with an aperture (14) for delivering a plasma from the aperture. A transport mechanism is configured to transport a substrate (11) and the plasma source relative to each other parallel to the outer face, with a substrate surface to be processed in parallel with at least a part of the outer face that contains the aperture. First (4-1) and second tile (4-2) are arranged within a first plane of a working electrode (22) with neighbouring edges (12) bordering a first plasma collection space (6-1) and a third tile (4-3) is arranged in a second plane of the working electrode parallel to the first plane such that the third tile overlaps neighbouring edges in the first plane. At least one of the working and counter electrodes comprises a local modification (13,15) near said neighbouring edges to increase a plasma delivery to the aperture compensating for loss of plasma collection due to the neighbouring edges.

Abstract: Disclosed is a coating made of an organic material on a mold for glass molding. The coating comprises CrxWyN(1-x-y), where 0.15<x<0.4, and 0.2?y?0.45. The coating has excellent high temperature resistance and anti-adhesion properties, thus being a promising coating material for molds.

Abstract: A conductor includes a plurality of metal nanostructures and an organic material, where a portion of the organic material surrounding each of the metal nanostructures is selectively removed, and the conductor has a haze of less than or equal to about 1.1, a light transmittance of greater than or equal to about 85% at about 550 nm, and a sheet resistance of less than or equal to about 100 ?/sq. An electronic device includes the conductor, and a method of manufacturing a conductor includes preparing a conductive film including a metal nanostructure and an organic material, and selectively removing the organic material from the conductive film using a cluster ion beam sputtering.

Abstract: Process chambers and methods for calibrating components of a processing chamber while the chamber volume is under vacuum are described. The process chamber includes a motor shaft connected to the process chamber with a plurality of motor bolts. A support plate is positioned under the chamber floor to accommodate for deflection of the chamber floor due to vacuum conditions within the chamber volume. A bellows assembly extending from the chamber floor to the support plate maintains vacuum conditions within the chamber.

Abstract: A method of making an anode for use in an energy storage device is provided. The method includes providing a current collector having an electrically conductive substrate and a surface layer overlaying a first side of the electrically conductive substrate. A second side of the electrically conductive substrate includes a filament growth catalyst, wherein the second side is opposite the first. The method further includes depositing a lithium storage layer onto the surface layer using a first CVD process forming a plurality of lithium storage filamentary structures on the second side of the electrically conductive substrate using second CVD process.

Abstract: A display apparatus includes: a substrate having a display area and a peripheral area outside the display area; a first insulating layer over both the display area and the peripheral area; a first dam over the peripheral area and spaced apart from the first insulating layer; an electrode power supply line, at least a part of the electrode power supply line being located between the first insulating layer and the first dam; a protection conductive layer over the first insulating layer, the protection conductive layer extending over the electrode power supply line and electrically connected to the electrode power supply line; a pixel electrode over the first insulating layer in the display area; an opposite electrode over the pixel electrode; and a capping layer covering the opposite electrode and extending outside the opposite electrode such that an end of the capping layer is on the first insulating layer.

Abstract: Exemplary substrate support assemblies may include an electrostatic chuck body defining a substrate support surface. The support assemblies may include a support stem coupled with the electrostatic chuck body. The support assemblies may include an electrode embedded within the electrostatic chuck body proximate the substrate support surface. The support assemblies may include a ground electrode embedded within the electrostatic chuck body. The support assemblies may include one or more channels formed within the electrostatic chuck body between the electrode and the ground electrode.

Abstract: A mass spectrometry system includes a sample holder provided in a vacuum changer and on which a sample is disposed, an irradiator configured to perform sputtering or ionization on the sample, an analyzer configured to analyze an ionized sample generated from the sample by the irradiator, and a controller configured to control the irradiator or the analyzer and perform a first process and a second process. The first process is to determine position information of materials in the sample by irradiating a laser or ion beam to a portion of the sample, and the second process is to irradiate a laser or ion beam of a first output value to another portion of the sample in a section in which the materials in the sample change and irradiate a laser or ion beam of a second output value in other sections.

Abstract: A supported catalyst comprises: a support that is particulate; and a composite layer laminate formed outside the support and including two or more composite layers, wherein each of the composite layers includes a catalyst portion containing a catalyst and a metal compound portion containing a metal compound, the support contains 10 mass % or more of each of Al and Si, and a volume-average particle diameter of the support is 50 ?m or more and 400 ?m or less.

Abstract: A catadioptric projection lens images a pattern of a mask in an effective object field of the projection lens into an effective image field of the projection lens with electromagnetic radiation with an operating wavelength ?<260 nm. The projection lens includes a multiplicity of lens elements and a multiplicity of mirrors including at least one concave mirror. The lens elements and mirrors define a projection beam path that extends from the object plane to the image plane and contains at least one pupil plane. The mirrors include a first mirror having a first mirror surface in the projection beam path between the object and pupil planes in the optical vicinity of a first field plane optically conjugate to the object plane. The mirrors also include a second mirror having a second mirror surface in the projection beam path between the pupil and image planes in the optical vicinity of a second field plane that is optically conjugate to the first field plane.

Abstract: An ion implanter includes a beam generator that generates anion beam, a beam scanner that performs reciprocating scan with the ion beam in a first direction, a platen driving device that performs reciprocating motion of a wafer in a second direction perpendicular to the first direction, while holding the wafer so that a wafer processing surface is irradiated with the ion beam subject to the reciprocating scan, and a control device that changes a beam scan speed in the first direction and a wafer motion speed in the second direction in accordance with a beam irradiation position in the first direction and the second direction at which the wafer processing surface is irradiated with the ion beam so that ions having a desired two-dimensional non-uniform dose distribution are implanted into the wafer processing surface.

Abstract: A method may include providing a set of features in a mask layer, wherein a given feature comprises a first dimension along a first direction, second dimension along a second direction, orthogonal to the first direction, and directing an angled ion beam to a first side region of the set of features in a first exposure, wherein the first side region is etched a first amount along the first direction. The method may include directing an angled deposition beam to a second side region of the set of features in a second exposure, wherein a protective layer is formed on the second side region, the second side region being oriented perpendicularly with respect to the first side region. The method may include directing the angled ion beam to the first side region in a third exposure, wherein the first side region is etched a second amount along the first direction.

Abstract: A method of trimming the refractive index of material forming at least part of one or more structures integrated in one or more pre-fabricated devices, the method comprising: implanting one or more first regions of material of one or more pre-fabricated devices, encompassing at least partially one or more device structures, with ions to alter the crystal form of the material within the one or more first regions and change the refractive index of the material within the one or more first regions; and heat treating one or more second regions of material of the one or more devices, encompassing at least partially the one or more first regions, to alter the crystal form of the material within the one or more first regions encompassed by the one or more second regions and change the refractive index thereof, thereby trimming the refractive index of the material of at least part of the one or more device structures, such that the one or more device structures provide one or more predetermined device outputs.

Abstract: A bell cup (3) of a rotary atomization-type coating device (1) is provided. This device has a rotary shaft (13) and a feed tube (15) inserted in the rotary shaft. The bell cup is fitted to a tip end part of the rotary shaft and has a coating material spreading surface (31) on an inner surface of the bell cup. The feed tube discharges a coating material to the coating material spreading surface. The coating material spreading surface includes a region extending from a predetermined position on a proximal end side to a distal end edge. The region is constituted of a convex curved surface toward an extension of the rotary shaft. The outermost surface of at least part (31B) of the coating material spreading surface is covered by a diamond-like carbon film (50) free from silicon at least on its outermost surface.

Abstract: Example implementations relate to techniques for refining the microstructure of metallic materials used for additive manufacturing. An example can involve generating a first layer of an integral object using a material with grains structured in a first arrangement. After a threshold duration occurs since generating the first layer, the example can involve applying an external force to the first layer to cause deformations in the first arrangement of grains. The example can further involve generating a second layer coupled to the first layer of the integral object to form a portion of the integral object. Generating the second layer of the integral object causes the material of the first layer to recrystallize new grains to replace grains proximate the deformations. The grains that result from recrystallization are structured in new arrangement that improves the physical and mechanical properties of the layer and subsequent layers collective.

Abstract: Disclosed is a free atom nanotube growth technology capable of continuously growing long, high quality nanotubes. This patent application is a Continuation In Part of the Trekking Atom Nanotube Growth patent application #14037034 filed on Sep. 25, 2013. The current invention represents a departure from chemical vapor deposition technology as the atomic feedstock does not originate in the gaseous environment surrounding the nanotubes. The technology mitigates the problems that cease carbon nanotube growth in chemical vapor deposition growth techniques: 1) The accumulation of material on the surface of the catalyst particles, suspected to be primarily amorphous carbon, 2) The effect of Ostwald ripening that reduces the size of smaller catalyst particles and enlarges larger catalyst particles, 3) The effect of some catalyst materials diffusing into the substrate used to grow carbon nanotubes and ceasing growth when the catalyst particle becomes too small.

Abstract: According to one embodiment, the silicon layer includes phosphorus. The buried layer is provided on the silicon layer. The stacked body is provided on the buried layer. The stacked body includes a plurality of electrode layers stacked with an insulator interposed. The semiconductor body extends in a stacking direction of the stacked body through the stacked body and through the buried layer, and includes a sidewall portion positioned at a side of the buried layer. The silicon film is provided between the buried layer and the sidewall portion of the semiconductor body. The silicon film includes silicon as a major component and further includes at least one of germanium or carbon.

Abstract: Pattern-multiplication via a multiple step ion beam etching process utilizing multiple etching steps. The ion beam is stationary, unidirectional or non-rotational in relation to the surface being etched during the etching steps, but sequential etching steps can utilize an opposite etching direction. Masking elements are used to create additional masking elements, resulting in decreased spacing between adjacent structures and increased structure density.

Abstract: A substrate deposition system includes a system frame; a plurality of processing tanks carried by the system frame, the plurality of processing tanks adapted to contain liquid coating materials of different light refractive indexes; at least one actuator disposed in proximity to the plurality of processing tanks, the at least one actuator adapted to sequentially immerse at least one substrate in the liquid coating materials and transfer the at least one substrate between the plurality of processing tanks; and at least one coating system located in a process flow downstream direction from the plurality of processing tanks, the at least one coating system adapted to apply an antireflective coating to the at least one substrate. A lens surface location measuring system is also disclosed.

Abstract: A method for manufacturing a solar cell is disclosed. The disclosed method includes conductive region formation of forming a first-conduction-type region at one surface of a semiconductor substrate and a second-conduction-type region at another surface of the semiconductor substrate, and electrode formation of forming a first electrode connected to the first-conduction-type region and a second electrode connected to the second-conduction-type region. In the conductive region formation, the first-conduction-type region is formed by forming a dopant layer containing a first-conduction-type dopant over the one surface of the semiconductor substrate, and heat-treating the dopant layer, and the second-conduction-type region is formed by ion-implanting a second-conduction-type dopant into the semiconductor substrate at the another surface of the semiconductor substrate.

Abstract: A novel composition, system and method for improving beam current during boron ion implantation are provided. In a preferred aspect, the boron ion implant process involves utilizing B2H6, 11BF3 and H2 at specific ranges of concentrations. The B2H6 is selected to have an ionization cross-section higher than that of the BF3 at an operating arc voltage of an ion source utilized during generation and implantation of active hydrogen ions species. The hydrogen allows higher levels of B2H6 to be introduced into the BF3 without reduction in F ion scavenging. The active boron ions produce an improved beam current characterized by maintaining or increasing the beam current level without incurring degradation of the ion source when compared to a beam current generated from conventional boron precursor materials.

Abstract: An apparatus to treat a substrate. The apparatus may include a reactive gas source having a reactive gas outlet disposed in a process chamber, the reactive gas outlet to direct a first reactive gas to the substrate; a plasma chamber coupled to the process chamber and including an extraction plate having an extraction aperture extending along a first direction, disposed within the process chamber and movable along a second direction perpendicular to the first direction between a first position facing the reactive gas source and a second position facing the extraction aperture; and a gas flow restrictor disposed between the reactive gas outlet and the extraction aperture, the gas flow restrictor defining a differential pumping channel between at least the plasma chamber and substrate stage.

Abstract: The invention provides a plasma processing apparatus and a dry etching method for etching a multilayered film structure having steps with high accuracy. The plasma processing apparatus comprises a vacuum reactor, a lower electrode placed within a processing chamber of the vacuum reactor and having a wafer to be etched mounted on the upper surface thereof, bias supplying units and for supplying high frequency power for forming a bias potential to the lower electrode, a gas supply means for feeding reactive gas into the processing chamber, an electric field supplying means through for supplying a magnetic field for generating plasma in the processing chamber, and a control unit for controlling the distribution of ion energy in the plasma being incident on the wafer via the high frequency power.

Abstract: A method for improving the productivity of a hybrid scan implanter by determining an optimum scan width is provided. A method of tuning a scanned ion beam is provided, where a desired beam current is determined to implant a workpiece with desired properties. The scanned beam is tuned utilizing a setup Faraday cup. A scan width is adjusted to obtain an optimal scan width using setup Faraday time signals. Optics are tuned for a desired flux value corresponding to a desired dosage. Uniformity of a flux distribution is controlled when the desired flux value is obtained. An angular distribution of the ion beam is further measured.

Abstract: A novel composition, system and method thereof for improving beam current during boron ion implantation are provided. The boron ion implant process involves utilizing B2H6, BF3 and H2 at specific ranges of concentrations. The B2H6 is selected to have an ionization cross-section higher than that of the BF3 at an operating arc voltage of an ion source utilized during generation and implantation of active hydrogen ions species. The hydrogen allows higher levels of B2H6 to be introduced into the BF3 without reduction in F ion scavenging. The active boron ions produce an improved beam current characterized by maintaining or increasing the beam current level without incurring degradation of the ion source when compared to a beam current generated from conventional boron precursor materials.

Abstract: A method of forming a thin film containing a doping element in a vacuum atmosphere, which includes: supplying a source gas into a processing vessel being under the vacuum atmosphere through a source gas supply unit such that a source of the source gas is adsorbed onto a substrate in the processing vessel; repeating, a plurality of times, a sequence of operations of supplying a doping gas containing the doping element into the processing vessel through a doping gas supply unit, followed by sealing the doping gas inside the processing vessel, followed by vacuum-exhausting the processing vessel; supplying a reaction gas into the processing vessel through a reaction gas supply unit such that the reaction gas reacts with the source to produce a reaction product; and replacing an internal atmosphere of the processing vessel, the replacing being performed between the operations.

Abstract: A novel composition, system and method for improving beam current during boron ion implantation are provided. In a preferred aspect, the boron ion implant process involves utilizing B2H6, 11BF3 and H2 at specific ranges of concentrations. The B2H6 is selected to have an ionization cross-section higher than that of the BF3 at an operating arc voltage of an ion source utilized during generation and implantation of active hydrogen ions species. The hydrogen allows higher levels of B2H6 to be introduced into the BF3 without reduction in F ion scavenging. The active boron ions produce an improved beam current characterized by maintaining or increasing the beam current level without incurring degradation of the ion source when compared to a beam current generated from conventional boron precursor materials.

Abstract: An organic light-emitting display apparatus includes a substrate, a display unit, an encapsulation layer, and a protection layer. The display unit is formed on the substrate. The encapsulation layer covers the display unit. The protection layer is formed on the encapsulation layer. The encapsulation layer is formed of a low temperature viscosity transition (LVT) inorganic material. The protection layer is formed of an elastic, adhesive material to protect the encapsulation layer from an external force.

Abstract: Methods of implanting boron-containing ions using fluorinated boron-containing dopant species that are more readily cleaved than boron trifluoride. A method of manufacturing a semiconductor device including implanting boron-containing ions using fluorinated boron-containing dopant species that are more readily cleaved than boron trifluoride. Also disclosed are a system for supplying a boron hydride precursor, and methods of forming a boron hydride precursor and methods for supplying a boron hydride precursor. In one implementation of the invention, the boron hydride precursors are generated for cluster boron implantation, for manufacturing semiconductor products such as integrated circuitry.

Abstract: The method for depositing a film of the present invention comprises the first irradiation step of irradiating particles having energy on a surface of a substrate 101, the first film deposition step of depositing a first film 103 on the surface of the substrate 101 subjected to the first irradiation step by using a dry process, and the second film deposition step of depositing a second film 105 having oil repellency on a surface of the first film 103. According to the present invention, a method for depositing a film enabling production of an oil-repellent substrate comprising an oil-repellent film having abrasion resistance of a practically sufficient level can be provided.

Abstract: A fixing apparatus includes a first member that is heated by a heat source and is rotatable; a second member that is rotatable, the second member forming a nip portion capable of sandwiching a recording material between the first member and the second member; and a pressure member that is disposed inside the first member, has a surface coming into contact with an inner surface of the first member, and pressurizes the first member against the second member, in which the pressure member has a surface layer forming the surface of the pressure member coming into contact with the inner surface of the first member, and the surface layer includes a diamond-like carbon film having an sp3 bond ratio of 40% or more and 90% or less.

Abstract: Provided are a bump structure includes a first bump and a second bump, a semiconductor package including the same, and a method of manufacturing the same. The bump structure includes: first bump provided on a connection pad of a substrate, the first bump including a plurality of nano-wires extending from the connection pad and a body connecting end portions of the plurality of nano-wires; and a second bump provided on the body of the first bump.

Abstract: A method for making a scissoring type current-perpendicular-to-the-plane magnetoresistive sensor with exchange-coupled soft side shields uses oblique angle ion milling to remove unwanted material from the side edges of the upper free layer. All of the layers making up the sensor stack are deposited as full films. The sensor stack is then ion milled to define the sensor side edges. The side regions are then refilled by deposition of an insulating layer. Next, the lower soft magnetic layers of the exchange-coupled side shields are deposited, which also coats the insulating layer up to and past the side edges of the upper free layer. The soft magnetic material adjacent the side edges of the upper free layer is removed by oblique angle ion beam milling. The material for the antiparallel-coupling (APC) layers is deposited, followed by deposition of the material for the upper soft magnetic layers of the exchange-coupled side shields.

Abstract: A coated device comprising a body, a coating on at least a portion of a surface of the body, wherein the coating comprises, a terminal layer, and at least one underlayer positioned between the terminal layer and the body, the underlayer comprising a hardness of greater than 61 HRc, wherein prior to the addition of the terminal layer, at least one of the body and the underlayer is polished to a surface roughness of less than or equal to 1.0 micrometer Ra.

Abstract: A magnetic data storage medium includes an ion doped magnetic recording layer having a continuous grading of coercivity or anisotropy. The medium also includes an ion-doped overcoat having an ion density that is at a maximum substantially at the interface with the recording layer and has a continuous grading of ion density between the overcoat and the recording layer. The coercivity is at a minimum substantially at the interface.

Abstract: A deposition device that deposits material particles includes an ionization section that ionizes the material particles utilizing a photoelectric effect in a reaction chamber to which the material particles are supplied, and an electrode section that guides the ionized material particles to a given area utilizing a Coulomb force.

Abstract: An ion implantation system and process, in which the performance and lifetime of the ion source of the ion implantation system are enhanced, by utilizing isotopically enriched dopant materials, or by utilizing dopant materials with supplemental gas(es) effective to provide such enhancement.

Abstract: A method is disclosed for reducing particle contamination in an ion implantation system, wherein an ion beam is created via the ion source operating in conjunction with an extraction electrode assembly. A cathode voltage is applied to the ion source for generating ions therein, and a suppression voltage is applied to the extraction assembly for preventing electrons in the ion beam from being drawn into the ion source. The suppression voltage is selectively modulated, thereby inducing a current flow or an arc discharge through the extraction assembly to remove deposits on surfaces thereof to mitigate subsequent contamination of workpieces.

Abstract: Systems and methods for plasma doping microfeature workpieces are disclosed herein. In one embodiment, a method of implanting boron ions into a region of a workpiece includes generating a plasma in a chamber, selectively applying a pulsed electrical potential to the workpiece with a duty cycle of between approximately 20 percent and approximately 50 percent, and implanting an ion specie into the region of the workpiece.

Abstract: A method for making a strip shaped graphene layer includes the following steps. First, a carbon nanotube structure on a surface of a metal substrate is provided. The carbon nanotube structure includes at least one drawn carbon nanotube film. The at least one drawn carbon nanotube film includes a number of carbon nanotube segments, each of the number of carbon nanotube segments being substantially parallel to each other and separated from each other by a strip-shaped gap. Second, carbon ions are implanted into the metal substrate through the strip-shaped gaps. Third, the metal substrate is annealed to obtain the strip shaped graphene layer.

Abstract: An ion source uses at least one induction coil to generate ac magnetic field to couple rf/VHF power into a plasma within a vessel, where the excitation coil may be a single set of turns each turn having lobes or multiple separate sets of windings. The excitation coil is positioned outside and proximate that side of the vessel that is opposite to the extraction slit, and elongated parallel to the length dimension of the extraction slit. The conducting shield(s) positioned outside or integrated with the well of the vessel are used to block the capacitive coupling to the plasma and/or to collect any rf/VHF current may be coupled into the plasma. The conducting shield positioned between the vessel and the coil set can either shield the plasma from capacitive coupling from the excitation coils, or be tuned to have a higher rf/VHF voltage to ignite or clean the source.

Abstract: A soft-landing (SL) instrument for depositing ions onto substrates using a laser ablation source is described herein. The instrument of the instant invention is designed with a custom drift tube and a split-ring ion optic for the isolation of selected ions. The drift tube allows for the separation and thermalization of ions formed after laser ablation through collisions with an inert bath gas that allow the ions to be landed at energies below 1 eV onto substrates. The split-ring ion optic is capable of directing ions toward the detector or a landing substrate for selected components. The inventors further performed atomic force microscopy (AFM) and drift tube measurements to characterize the performance characteristics of the instrument.