Nonuniform Or Patterned Ion Plating Or Ion Implanting (e.g., Mask, Etc.) Patents (Class 427/526)
  • Patent number: 11302515
    Abstract: A method for structuring a decorative or technical pattern in the thickness of an object made of an at least partially transparent amorphous, semi-crystalline or crystalline material, wherein the object is made of an at least partially transparent material including a top surface and a bottom surface which extends away from the top surface. The top or bottom surfaces is provided with a mask defining an opening whose outline corresponds to the profile of the pattern to be structured, the mask covering the top or bottom surface at the positions which are not to be structured. The pattern is structured with a mono- or multicharged ion beam through the opening of the mask, wherein the mechanical properties of the mask are sufficient to prevent the ions of the ion beam from etching the top or bottom surface at the positions where this top or bottom surface is covered by the mask.
    Type: Grant
    Filed: March 26, 2019
    Date of Patent: April 12, 2022
    Assignee: Comadur S.A.
    Inventors: Alexis Boulmay, Pierry Vuille, Julien Meier, Pierpasquale Tortora
  • Patent number: 11222813
    Abstract: A method of manufacturing a wafer assembly includes forming an array of planar wafer level metal posts extending from a surface of a substrate of a first wafer. After forming the array of posts, an oxide layer is applied over the surface of the first wafer and around the array of posts, the oxide layer being applied at a temperature of below 150 degrees Celsius.
    Type: Grant
    Filed: November 6, 2019
    Date of Patent: January 11, 2022
    Assignee: Raytheon Company
    Inventors: Sean P. Kilcoyne, Eric R. Miller, George Grama
  • Patent number: 10716197
    Abstract: A computer program product and a method for dissipation of an electrical charge stored in a region of an object. The method may include (a) sensing, by at least one sensor, an electrical charging status of the region of the object, while the object is located within a vacuum chamber and while a gaseous pressure within the vacuum chamber is below a certain vacuum pressure threshold; and (b) performing, based on the charging status of the given region, an electrical charge dissipation process that comprises increasing the gaseous pressure within the vacuum chamber to be within a given gaseous pressure range that facilitates a dissipation, by breakdown, of the electrical charge stored in the region of the object to the vacuum chamber.
    Type: Grant
    Filed: September 19, 2017
    Date of Patent: July 14, 2020
    Assignee: APPLIED MATERIALS ISRAEL LTD.
    Inventors: Guy Eytan, Emil Weisz, Samuel Ives Nackash, Albert Karabekov
  • Patent number: 10546721
    Abstract: The present invention provides a technology for avoiding radiation of an ion beam at a position other than a desired processing position. A microstructure manufacturing method includes a step of radiating an ion beam to a sample; a step of supplying a gas to the sample; a step of stopping supplying the gas to the sample; and a step of stopping radiating the ion beam to the sample. The step of radiating the ion beam is performed earlier than the step of supplying the gas or the step of stopping supplying the gas is performed earlier than the step of stopping radiating the ion beam.
    Type: Grant
    Filed: March 7, 2018
    Date of Patent: January 28, 2020
    Assignee: Hitachi, Ltd.
    Inventors: Keiji Watanabe, Hiroyasu Shichi, Daisuke Ryuzaki
  • Patent number: 10504777
    Abstract: A method of manufacturing an array of planar wafer level metal posts includes plating an array of posts within a photoresist (PR) pattern mold on a substrate of a first wafer. Stripping the PR pattern mold from the substrate and array of posts. Applying an oxide layer, at a temperature of below 150 degrees Celsius, over a surface of the first wafer. Applying chemical-mechanical polishing (CMP) to planarize the oxide layer and the array of posts.
    Type: Grant
    Filed: February 13, 2018
    Date of Patent: December 10, 2019
    Assignee: Raytheon Company
    Inventors: Sean P. Kilcoyne, Eric R. Miller, George Grama
  • Patent number: 9947549
    Abstract: Methods are described herein for etching cobalt films which are difficult to volatize. The methods include exposing a cobalt film to a bromine or chlorine-containing precursor with a concurrent local plasma which applies a bias to the impinging etchants. Cobalt halide is formed on the surface at the same time an amorphized cobalt layer is formed near the surface. A carbon-and-nitrogen-containing precursor is later delivered to the substrate processing region to form volatile cobalt complexes which desorb from the surface of the cobalt film. Cobalt may be selectively removed. The concurrent production of cobalt halide and amorphized regions was found to markedly increase the overall etch rate and markedly improve surface smoothness upon exposure to the carbon-and-nitrogen-containing precursor. All the recited steps may now be performed in the same substrate processing chamber.
    Type: Grant
    Filed: October 24, 2016
    Date of Patent: April 17, 2018
    Assignee: Applied Materials, Inc.
    Inventors: Xikun Wang, Zhenjiang Cui, Soonam Park, Nitin K. Ingle
  • Patent number: 9728208
    Abstract: A method including depositing a plasmonic material at a temperature of at least 150° C.; and forming at least a peg of a near field transducer (NFT) from the deposited plasmonic material.
    Type: Grant
    Filed: December 17, 2015
    Date of Patent: August 8, 2017
    Assignee: Seagate Technology LLC
    Inventors: Sarbeswar Sahoo, Tong Zhao, Michael C. Kautzky
  • Patent number: 9508375
    Abstract: Methods and apparatus for forming substrates having magnetically patterned surfaces is provided. A magnetic layer comprising one or more materials having magnetic properties is formed on the substrate. The magnetic layer is subjected to a patterning process in which selected portions of the surface of the magnetic layer are altered such that the altered portions have different magnetic properties from the non-altered portions without changing the topography of the substrate. A protective layer and a lubricant layer are deposited over the patterned magnetic layer. The patterning is accomplished through a number of alternative processes that expose substrates to energy of varying forms.
    Type: Grant
    Filed: April 13, 2010
    Date of Patent: November 29, 2016
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Majeed A. Foad, Nir Merry
  • Patent number: 9384773
    Abstract: The present disclosure relates to a method for fabricating an ion-implanted bit-patterned medium. The method includes providing a medium, the medium having a magnetic layer and a substrate and the magnetic layer includes migrating components. The method further includes forming a patterned mask layer on the surface of the magnetic layer and then ion-implanting the medium through the patterned mask layer, wherein the exposed portions of the magnetic layer comprise trench regions, the covered portions of the magnetic layer comprise island regions, and the transition areas between the trench regions and the island regions comprise boundary regions, wherein the island regions have more favorable magnetic properties than the trench regions. The method also includes annealing the medium, wherein the migrating components diffuse from inside the island regions towards the trench regions.
    Type: Grant
    Filed: March 15, 2013
    Date of Patent: July 5, 2016
    Assignee: HGST NETHERLANDS, B.V.
    Inventors: Olav Hellwig, Kurt A. Rubin, Qing Zhu
  • Patent number: 9209094
    Abstract: A first fin field effect transistor and a second fin field effect transistor are formed on an insulator layer overlying a semiconductor material layer. A first pair of trenches is formed through the insulator layer in regions in which a source region and a drain region of the first fin field effect transistor is to be formed. A second pair of trenches is formed partly into the insulator layer without extending to the top surface of the semiconductor material layer. The source region and the drain region of the first field effect transistor can be epitaxial stressor material portions that are anchored to, and epitaxially aligned to, the semiconductor material layer and apply stress to the channel of the first field effect transistor to enhance performance. The insulator layer provides electrical isolation from the semiconductor material layer to the second field effect transistor.
    Type: Grant
    Filed: July 29, 2013
    Date of Patent: December 8, 2015
    Assignee: GLOBALFOUNDRIES INC.
    Inventors: Kangguo Cheng, Ramachandra Divakaruni, Ali Khakifirooz, Kern Rim
  • Patent number: 9190093
    Abstract: The present disclosure relates to a magnetic medium that includes a substrate and a bit patterned magnetic layer applied to the substrate. The bit-patterned magnetic layer includes islands and each island includes a first magnetic material having a first magnetic anisotropy and that has a top surface, a bottom surface, and a peripheral surface. Each island also includes a second magnetic material covering the peripheral surface of the first magnetic material and having a second magnetic anisotropy that is higher than the first magnetic anisotropy. In one embodiment, the first magnetic material may comprise a nucleation domain in a centrally located surface portion of the magnetic islands and/or the second magnetic material may comprise an outer shell on the peripheral surface of the islands.
    Type: Grant
    Filed: February 6, 2013
    Date of Patent: November 17, 2015
    Assignee: HGST NETHERLANDS, B.V.
    Inventors: Michael Grobis, Dan S. Kercher, Kurt A. Rubin
  • Patent number: 9142387
    Abstract: An isotopically-enriched, boron-containing compound comprising two or more boron atoms and at least one fluorine atom, wherein at least one of the boron atoms contains a desired isotope of boron in a concentration or ratio greater than a natural abundance concentration or ratio thereof. The compound may have a chemical formula of B2F4. Synthesis methods for such compounds, and ion implantation methods using such compounds, are described, as well as storage and dispensing vessels in which the isotopically-enriched, boron-containing compound is advantageously contained for subsequent dispensing use.
    Type: Grant
    Filed: December 3, 2013
    Date of Patent: September 22, 2015
    Assignee: ENTEGRIS, INC.
    Inventors: Robert Kaim, Joseph D. Sweeney, Oleg Byl, Sharad N. Yedave, Edward E. Jones, Peng Zou, Ying Tang, Barry Lewis Chambers, Richard S. Ray
  • Patent number: 9136126
    Abstract: A surface region of a semiconductor material on a surface of a semiconductor device is doped during its manufacture, by coating the surface region of the semiconductor material with a dielectric material surface layer and locally heating the surface of the semiconductor material in an area to be doped to locally melt the semiconductor material with the melting being performed in the presence of a dopant source. The heating is performed in a controlled manner such that a region of the surface of the semiconductor material in the area to be doped is maintained in a molten state without refreezing for a period of time greater than one microsecond and the dopant from the dopant source is absorbed into the molten semiconductor. The semiconductor device includes a semiconductor material structure in which a junction is formed and may incorporate a multi-layer anti-reflection coating.
    Type: Grant
    Filed: February 11, 2010
    Date of Patent: September 15, 2015
    Assignee: NewSouth Innovations Pty Limited
    Inventors: Alison Maree Wenham, Ziv Hameiri, Ji Jing Jia, Ly Mai, Shi Zhengrong, Budi Tjahjono, Stuart Ross Wenham
  • Publication number: 20150086755
    Abstract: To provide a photocured product having small mold releasing force. A photocured product obtained by curing with light and containing a surface active agent, wherein a peak area of the ether bond derived peak is 3.0 times or more as large as a peak area of the ester bond derived peak, wherein the peak areas are obtained by peak separation processing by curve fitting of an X-ray photoelectron spectroscopy spectrum obtained as an analytical result on a chemical state of carbon at topmost surface of the photocured product, the analytical result being among analytical results on the topmost surface of the photocured product obtained by surface analysis of the photocured product with angle resolved X-ray photoelectron spectroscopy.
    Type: Application
    Filed: May 21, 2013
    Publication date: March 26, 2015
    Inventors: Chieko Mihara, Toshiki Ito, Yohei Murayama, Motoki Okinaka
  • Patent number: 8974867
    Abstract: A method for making a strip shaped graphene layer includes the following steps. First, a carbon nanotube structure on a surface of a metal substrate is provided. The carbon nanotube structure includes at least one drawn carbon nanotube film. The at least one drawn carbon nanotube film includes a number of carbon nanotube segments, each of the number of carbon nanotube segments being substantially parallel to each other and separated from each other by a strip-shaped gap. Second, carbon ions are implanted into the metal substrate through the strip-shaped gaps. Third, the metal substrate is annealed to obtain the strip shaped graphene layer.
    Type: Grant
    Filed: December 29, 2012
    Date of Patent: March 10, 2015
    Assignees: Tsinghua University, Hon Hai Precision Industry Co., Ltd.
    Inventors: Xiao-Yang Lin, Kai-Li Jiang, Shou-Shan Fan
  • Publication number: 20150045205
    Abstract: A soft-landing (SL) instrument for depositing ions onto substrates using a laser ablation source is described herein. The instrument of the instant invention is designed with a custom drift tube and a split-ring ion optic for the isolation of selected ions. The drift tube allows for the separation and thermalization of ions formed after laser ablation through collisions with an inert bath gas that allow the ions to be landed at energies below 1 eV onto substrates. The split-ring ion optic is capable of directing ions toward the detector or a landing substrate for selected components. The inventors further performed atomic force microscopy (AFM) and drift tube measurements to characterize the performance characteristics of the instrument.
    Type: Application
    Filed: November 12, 2013
    Publication date: February 12, 2015
    Inventors: Guido Fridolin Verbeck, IV, Stephen Davila
  • Publication number: 20140374376
    Abstract: A method of forming a near field transducer (NFT) layer, the method including depositing a film of a primary element, the film having a film thickness and a film expanse; and implanting at least one secondary element into the primary element, wherein the NFT layer includes the film of the primary element doped with the at least one secondary element.
    Type: Application
    Filed: June 24, 2014
    Publication date: December 25, 2014
    Inventors: Sethuraman Jayashankar, Michael C. Kautzky
  • Publication number: 20140370331
    Abstract: The embodiments disclose a continuous thin film magnetic layer and a patterned hard mask layer configured to be deposited onto the continuous thin film magnetic layer and to have plural ion implantations, wherein the ion implantations are configured to create chemically and structurally altered localized magnetic regions unprotected by the patterned hard mask layer.
    Type: Application
    Filed: January 17, 2014
    Publication date: December 18, 2014
    Applicant: Seagate Technology LLC
    Inventors: Sunnie H. N. Lim, Koichi Wago
  • Patent number: 8906706
    Abstract: A method of fabricating workpieces includes one or more layers on a substrate that are masked with an ion implantation mask comprising two or more layers. The mask layers include a first mask layer closer to the substrate, and a second mask layer on the first mask layer. The method also comprises ion implanting one or more of the layers on the substrate. Ion implantation may form portions with altered physical properties from the layers under the mask. The portions may form a plurality of non-magnetic regions corresponding to apertures in the mask.
    Type: Grant
    Filed: March 8, 2012
    Date of Patent: December 9, 2014
    Assignee: HGST Netherlands B.V.
    Inventors: Kanaiyalal C. Patel, Kurt A. Rubin
  • Publication number: 20140342441
    Abstract: The present invention provides, among others, apparatus for detecting a disease, comprising a system delivery biological subject and a probing and detecting device, wherein the probing and detecting device includes a first micro-device and a first substrate supporting the first micro-device, the first micro-device contacts a biologic material to be detected and is capable of measuring at the microscopic level an electric, magnetic, electromagnetic, thermal, optical, acoustical, biological, chemical, physical, or mechanical property of the biologic material.
    Type: Application
    Filed: April 4, 2013
    Publication date: November 20, 2014
    Applicant: ANPAC BIO-MEDICAL SCIENCE CO., LTD.
    Inventors: Chris C. Yu, Xuedong Du, He Yu
  • Patent number: 8865268
    Abstract: A method and apparatus, the method including: forming a recess in a graphene layer wherein the recess creates a boundary between a first portion of the graphene layer and a second portion of the graphene layer; depositing electrically insulating material within the recess; and depositing an electrically conductive material over the insulating material.
    Type: Grant
    Filed: April 28, 2009
    Date of Patent: October 21, 2014
    Assignee: Nokia Corporation
    Inventors: Samiul Haque, Reijo K. Lehtiniemi, Asta M. Karkkainen, Lorenz Lechner, Pertti Hakonen
  • Patent number: 8858809
    Abstract: A manufacturing method of a magnetic recording medium includes steps of forming a magnetic recording layer, a first mask layer, a second mask layer containing silicon as primary component, a strip layer, a third mask layer, and a resist layer, a step of patterning the resist layer to provide a pattern, steps of transferring the pattern to the third mask layer, to the strip layer, and to the second mask layer, a step of removing the strip layer by wet etching and of stripping the third mask layer and the resist layer above the magnetic recording layer, steps of transferring the pattern to the first mask layer and to the magnetic recording layer, and a step of stripping the first mask layer remaining on the magnetic recording layer.
    Type: Grant
    Filed: September 7, 2012
    Date of Patent: October 14, 2014
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Akira Watanabe, Kaori Kimura, Kazutaka Takizawa, Takeshi Iwasaki, Tsuyoshi Onitsuka, Akihiko Takeo
  • Patent number: 8852695
    Abstract: Electromagnetic radiation barriers and waveguides, including barriers and waveguides for light, are disclosed. The barriers and waveguides are fabricated by directing charged particles, for example, ions, into crystalline substrates, for example, single-crystal sapphire substrates, to modify the crystal structure and produce a region of varying refractive index. These substrates are then heated to temperatures greater than 200 degrees C. to stabilize the modified crystal structure and provide the barrier to electromagnetic radiation. Since the treatment stabilizes the crystal structure at elevated temperature, for example, above 500 degrees C. or above 1000 degrees C., the barriers and waveguides disclosed are uniquely adapted for use in detecting conditions in harsh environments, for example, at greater than 200 degrees C. Sensors, systems for using sensors, and methods for fabricating barriers and waveguides are also disclosed.
    Type: Grant
    Filed: September 10, 2012
    Date of Patent: October 7, 2014
    Assignee: The Research Foundation for The State University of New York
    Inventors: Mengbing Huang, William T. Spratt
  • Publication number: 20140272469
    Abstract: The present disclosure relates to a method for fabricating an ion-implanted bit-patterned medium. The method includes providing a medium, the medium having a magnetic layer and a substrate and the magnetic layer includes migrating components. The method further includes forming a patterned mask layer on the surface of the magnetic layer and then ion-implanting the medium through the patterned mask layer, wherein the exposed portions of the magnetic layer comprise trench regions, the covered portions of the magnetic layer comprise island regions, and the transition areas between the trench regions and the island regions comprise boundary regions, wherein the island regions have more favorable magnetic properties than the trench regions. The method also includes annealing the medium, wherein the migrating components diffuse from inside the island regions towards the trench regions.
    Type: Application
    Filed: March 15, 2013
    Publication date: September 18, 2014
    Applicant: HGST NETHERLANDS B.V.
    Inventors: Olav Hellwig, Kurt A. Rubin, Qing Zhu
  • Publication number: 20140262835
    Abstract: Various embodiments of a gas sensor device and method of fabricating a gas sensor device are provided. In one embodiment a gas sensor device includes a base substrate, an electrolyte layer disposed on the base substrate and a plurality of potentiometric sensor units electrically coupled to the base substrate. Each potentiometric sensor unit includes an electrolyte layer disposed on the base substrate, a sensing electrode comprising tungsten oxide (WO3) and platinum (Pt), a reference electrode comprising Pt, and a plurality of connectors coupled to the plurality of potentiometric sensors to connect the plurality of potentiometric sensors in series.
    Type: Application
    Filed: March 14, 2014
    Publication date: September 18, 2014
    Applicant: THE CLEVELAND CLINIC FOUNDATION
    Inventors: Gary W. Hunter, Carl W. Chang, Prabir K. Dutta, Suvra P. Mondal, Azlin M. Biaggi-Labiosa
  • Patent number: 8828854
    Abstract: A method of introducing dopants into a semiconductor wafer includes implanting the dopants into a region below a surface of the semiconductor wafer using an ion beam to form a first implanted layer. The dopants when activated causing a conductivity of the implanted layer to be either of N-type or P-type. The first implanted layer is characterized by a peak dopant concentration at a first depth below the surface of the semiconductor wafer. The method also includes removing a layer from the semiconductor wafer surface, wherein said layer includes a portion of said dopants.
    Type: Grant
    Filed: February 22, 2013
    Date of Patent: September 9, 2014
    Inventor: Tzu-Yin Chiu
  • Patent number: 8802188
    Abstract: The present invention relates to a method for manufacturing a magnetic recording medium having magnetically separated magnetic recording patterns, such a magnetic recording medium, and a magnetic recording and reproducing apparatus. The manufacturing method of the present invention includes: forming a continuous recording layer on a nonmagnetic substrate; then forming, on the recording layer, a mask layer including at least one element selected from the element group of Pt, Ru, and Pd in such a manner that part of the recording layer is not masked; and then performing a magnetic characteristic modifying process including exposing the unmasked part of the surface of the recording layer to reactive plasma or reactive ions produced in the reactive plasma to amorphize the part of the recording layer and to modify the magnetic characteristics of the part, so that magnetically separated magnetic recording patterns are formed.
    Type: Grant
    Filed: May 11, 2009
    Date of Patent: August 12, 2014
    Assignee: Showa Denko K.K.
    Inventor: Masato Fukushima
  • Publication number: 20140218824
    Abstract: The present disclosure relates to a magnetic medium that includes a substrate and a bit patterned magnetic layer applied to the substrate. The bit-patterned magnetic layer includes islands and each island includes a first magnetic material having a first magnetic anisotropy and that has a top surface, a bottom surface, and a peripheral surface. Each island also includes a second magnetic material covering the peripheral surface of the first magnetic material and having a second magnetic anisotropy that is higher than the first magnetic anisotropy. In one embodiment, the first magnetic material may comprise a nucleation domain in a centrally located surface portion of the magnetic islands and/or the second magnetic material may comprise an outer shell on the peripheral surface of the islands.
    Type: Application
    Filed: February 6, 2013
    Publication date: August 7, 2014
    Applicant: HGST NETHERLANDS B.V.
    Inventors: Michael Grobis, Dan S. Kercher, Kurt A. Rubin
  • Patent number: 8795790
    Abstract: [Problem] An object is to provide a magnetic recording medium with improved HDI characteristics, such as impact resistance, and its manufacturing method. [Solution] A typical structure of a magnetic recording medium 100 according to the present invention includes, on a base, at least a magnetic recording layer 122, a protective layer 126, and a lubricating layer 128, wherein the magnetic recording layer 122 includes, in an in-plane direction, a magnetic recording part 136 configured of a magnetic material and a non-recording part 134 magnetically separating the magnetic recording part 136, and a surface corresponding to the non-recording part 134 protuberates more than a surface corresponding to the magnetic recording part 136.
    Type: Grant
    Filed: December 9, 2009
    Date of Patent: August 5, 2014
    Assignee: WD Media (Singapore) Pte. Ltd.
    Inventors: Yoshiaki Sonobe, Akira Shimada, Tsuyoshi Ozawa, Masanori Aniya
  • Publication number: 20140175051
    Abstract: The embodiments disclose a method of creating a mask by depositing a protection layer that mechanically strengthens patterned features that are imprinted into a resist layer that is deposited onto a magnetic layer, implanting mechanically strengthened patterned resist layer features into the magnetic layer using ion implantation and removing the resist layer and the mask to expose at least a portion of the magnetic layer.
    Type: Application
    Filed: March 12, 2013
    Publication date: June 26, 2014
    Inventors: Michael Feldbaum, Koichi Wago, David Kuo
  • Patent number: 8728286
    Abstract: A method of manufacturing a sample for an atom probe analysis of the invention is made one going through a step of manufacturing a concave/convex structure in both of a base needle and a transplantation sample piece by an etching working of an FIB, a step of jointing mutual members, and a step of bonding such that the concave/convex structure becomes a mesh form by a deposition working of the FIB.
    Type: Grant
    Filed: November 7, 2007
    Date of Patent: May 20, 2014
    Assignee: SII Nano Technology Inc.
    Inventor: Takashi Kaito
  • Publication number: 20140132858
    Abstract: A method of manufacturing a touch panel sensor: a preparation step of preparing a substrate on which a transparent conductive layer is formed; an installation step of installing a patterning member that has patterns in which a first region covering the transparent conductive layer and a second region causing the transparent conductive layer to be exposed are formed; a patterning step of forming an insulation part by implanting at least one of irradiation object out of oxygen, oxygen ions, nitrogen, nitrogen ions, nitrogen oxide, and nitrogen oxide ions into the transparent conductive layer in the portion corresponding to the second region, and for patterning the transparent conductive layer in the portion covered by the first region as a conductive part; and a removing step of removing the patterning member from the transparent conductive layer.
    Type: Application
    Filed: November 15, 2013
    Publication date: May 15, 2014
    Applicant: SUMITOMO HEAVY INDUSTRIES, LTD.
    Inventors: Hiroshi IWATA, Yoshinobu MURAKAMI
  • Patent number: 8703247
    Abstract: A cross section processing method to be performed on a sample by irradiating the sample having a layer or a structure of an organic substance on a surface at a cross section processing position thereof with a focused ion beam using a focused ion beam apparatus includes: a protective film forming step for forming a protective film on the surface of the layer or the structure of the organic substance by irradiating the surface of the sample including the cross section processing position with the focused ion beam under the existence of source gas as the protective film; and a cross section processing step for performing cross section processing by irradiating the cross section processing position formed with the protective film with the focused ion beam at a voltage higher than an accelerating voltage in the protective film forming step.
    Type: Grant
    Filed: January 26, 2010
    Date of Patent: April 22, 2014
    Assignees: SII Nanotechnology Inc., SII Nanotechnology USA Inc.
    Inventors: Hidekazu Suzuki, Toshiaki Fujii, Mike Hassel-Shearer
  • Publication number: 20140090118
    Abstract: This disclosure provides systems, methods, and apparatus related to probes for multidimensional nanospectroscopic imaging. In one aspect, a method includes providing a transparent tip comprising a dielectric material. A four-sided pyramidal-shaped structure is formed at an apex of the transparent tip using a focused ion beam. Metal layers are deposited over two opposing sides of the four-sided pyramidal-shaped structure.
    Type: Application
    Filed: September 20, 2013
    Publication date: March 27, 2014
    Applicant: The Regents of the University of California
    Inventors: Alexander Weber-Bargioni, Stefano Cabrini, Wei Bao, Mauro Melli, Eli Yablonovitch, Peter J. Schuck
  • Publication number: 20140070119
    Abstract: Electromagnetic radiation barriers and waveguides, including barriers and waveguides for light, are disclosed. The barriers and waveguides are fabricated by directing charged particles, for example, ions, into crystalline substrates, for example, single-crystal sapphire substrates, to modify the crystal structure and produce a region of varying refractive index. These substrates are then heated to temperatures greater than 200 degrees C. to stabilize the modified crystal structure and provide the barrier to electromagnetic radiation. Since the treatment stabilizes the crystal structure at elevated temperature, for example, above 500 degrees C. or above 1000 degrees C., the barriers and waveguides disclosed are uniquely adapted for use in detecting conditions in harsh environments, for example, at greater than 200 degrees C. Sensors, systems for using sensors, and methods for fabricating barriers and waveguides are also disclosed.
    Type: Application
    Filed: September 10, 2012
    Publication date: March 13, 2014
    Applicant: COLLEGE OF NANOSCALE SCIENCE & ENGINEERING
    Inventors: Mengbing HUANG, William T. SPRATT
  • Patent number: 8654446
    Abstract: An optical element or module is designed to be placed in front of an optical sensor of a semiconductor component. At least one optically useful part of the element or module is provided through which the image to be captured is designed to pass. A method for obtaining such an optical element or module includes forming at least one through passage between a front and rear faces of the element or module. The front and rear faces are covered with a mask. Ion doping is introduced through the passage. As a result, the element or module has a refractive index that varies starting from a wall of the through passage and into the optically useful part. An image capture apparatus includes an optical imaging module having at least one such element or module.
    Type: Grant
    Filed: April 8, 2009
    Date of Patent: February 18, 2014
    Assignee: STMicroelectronics S.A.
    Inventors: Emmanuelle Vigier-Blanc, Guillaume Cassar
  • Publication number: 20140038393
    Abstract: A method of processing a substrate includes performing a first exposure that comprises generating a plasma containing reactive gas ions in a plasma chamber and generating a bias voltage between the substrate and the plasma chamber. The method also includes providing a plasma sheath modifier having an aperture disposed between the plasma and substrate and operable to direct the reactive gas ions toward the substrate, and establishing a pressure differential between the plasma chamber and substrate region while the reactive gas ions are directed onto the substrate.
    Type: Application
    Filed: July 31, 2012
    Publication date: February 6, 2014
    Applicant: VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.
    Inventors: Ludovic Godet, Xianfeng Lu, Deepak A. Ramappa
  • Publication number: 20140017518
    Abstract: A method for patterning a magnetic thin film on a substrate includes: providing a pattern about the magnetic thin film, with selective regions of the pattern permitting penetration of energized ions of one or more elements. Energized ions are generated with sufficient energy to penetrate selective regions and a portion of the magnetic thin film adjacent the selective regions. The substrate is placed to receive the energized ions. The portions of the magnetic thin film are rendered to exhibit a magnetic property different than selective other portions. A method for patterning a magnetic media with a magnetic thin film on both sides of the media is also disclosed.
    Type: Application
    Filed: September 17, 2013
    Publication date: January 16, 2014
    Applicant: APPLIED MATERIALS, INC.
    Inventors: Steven VERHAVERBEKE, Omkaram NALAMASU, Majeed A. FOAD, Mahalingam VENKATESAN, Nety M. KRISHNA
  • Publication number: 20140003959
    Abstract: A method for modifying a wear characteristic of a rotor component in a turbine system and a modified rotor component for a turbine system are disclosed. The method includes implanting ions of one of a Group 6 element, a Group 13 element, or a metalloid element through an exterior surface of a rotor component. The rotor component is one of a rotor wheel or a distance wheel.
    Type: Application
    Filed: June 27, 2012
    Publication date: January 2, 2014
    Applicant: GENERAL ELECTRIC COMPANY
    Inventors: David Vincent Bucci, Stephen Gerard Pope, Jason Robert Parolini
  • Publication number: 20140004272
    Abstract: According to one embodiment, there is provided a magnetic recording medium manufacturing method including forming a resist layer on a magnetic recording layer, patterning the resist layer, forming a magnetic pattern by performing ion implantation through the resist layer, partially modifying the surface of the magnetic recording layer, removing the resist, applying a self-organization material to the surface of the magnetic recording layer and forming a dotted mask pattern, and patterning the magnetic recording layer.
    Type: Application
    Filed: October 23, 2012
    Publication date: January 2, 2014
    Applicant: KABUSHIKI KAISHA TOSHIBA
    Inventors: Kaori KIMURA, Masatoshi SAKURAI, Kazuto KASHIWAGI, Akihiko TAKEO
  • Publication number: 20130316329
    Abstract: Among others, the present invention provides piezo-electric micro-devices for detecting at the microscopic level an electric, magnetic, electromagnetic, thermal, optical, acoustical, biological, chemical, physical, bio-chemical, bio-physical, physical-chemical, bio-physical-chemical, bio-mechanical, bio-electro-mechanical, electro-mechanical, or mechanical property of the biologic subject.
    Type: Application
    Filed: October 5, 2011
    Publication date: November 28, 2013
    Inventors: Chris Chang Yu, Xuedong Du
  • Publication number: 20130316088
    Abstract: According to one embodiment, a magnetic recording head manufacturing method characterized by includes processes of forming a main pole, forming, on the main pole, an insulating layer having a gap for forming a spin torque oscillator, forming a spin torque oscillator in the gap, and forming an auxiliary magnetic pole on the spin torque oscillator is provided.
    Type: Application
    Filed: December 5, 2012
    Publication date: November 28, 2013
    Applicant: KABUSHIKI KAISHA TOSHIBA
    Inventors: Norihito FUJITA, Shinobu SUGIMURA, Satoshi SHIROTORI, Tomohiko NAGATA, Akio HORI, Tomomi FUNAYAMA
  • Publication number: 20130287964
    Abstract: An ion implantation system including a plasma source, a mask-slit, and a plasma chamber. The plasma source is configured to generate a plasma within the plasma chamber in response to the introduction of a gas therein. The mask-slit is electrically isolated from the plasma chamber. A positive voltage bias is applied to the plasma chamber above a bias potential used to generate the plasma. The positive voltage bias drives the plasma potential to accelerate the ions to a desired implant energy. The accelerated ions pass through an aperture in the mask-slit and are directed toward a substrate for implantation. The mask-slit is electrically isolated from the plasma chamber and is maintained at ground potential with respect to the plasma.
    Type: Application
    Filed: April 26, 2012
    Publication date: October 31, 2013
    Applicant: VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.
    Inventors: Svetlana B. Radovanov, Victor M. Benveniste, Bon-Woong Koo, Richard M. White, Kevin M. Daniels
  • Patent number: 8551578
    Abstract: A method for patterning a magnetic thin film on a substrate includes: providing a pattern about the magnetic thin film, with selective regions of the pattern permitting penetration of energized ions of one or more elements. Energized ions are generated with sufficient energy to penetrate selective regions and a portion of the magnetic thin film adjacent the selective regions. The substrate is placed to receive the energized ions. The portion of the magnetic thin film is subjected to thermal excitation. The portions of the magnetic thin film are rendered to exhibit a magnetic property different than selective other portions. A method for patterning a magnetic media with a magnetic thin film on both sides of the media is also disclosed.
    Type: Grant
    Filed: October 22, 2008
    Date of Patent: October 8, 2013
    Assignee: Applied Materials, Inc.
    Inventors: Omkaram Nalamasu, Steven Verhaverbeke, Majeed Foad, Mahalingam Venkatesan, Nety M. Krishna
  • Patent number: 8535635
    Abstract: A method of manufacturing carbon cylindrical structures, as represented by carbon nanotubes, by growing them on a substrate using a chemical vapor deposition (CVD) method, comprising the steps of implanting metal ions to the substrate surface and then growing the carbon cylindrical structures using the metal ions as a catalyst. A method of manufacturing carbon nanotubes comprising a step of using nano-carbon material as seed material for growing carbon nanotubes is also disclosed. A biopolymer detection device comprising vibration inducing part for inducing vibration, binding part capable of resonating with the vibration induced by the vibration inducing part and capable of binding or interacting with a target biopolymer, and detection part for detecting whether or not the binding part have bound or interacted with the target biopolymer, is also disclosed.
    Type: Grant
    Filed: June 19, 2009
    Date of Patent: September 17, 2013
    Assignee: Fujitsu Limited
    Inventors: Yuji Awano, Akio Kawabata, Shozo Fujita
  • Patent number: 8535766
    Abstract: A method for patterning a magnetic thin film on a substrate includes: providing a pattern about the magnetic thin film, with selective regions of the pattern permitting penetration of energized ions of one or more elements. Energized ions are generated with sufficient energy to penetrate selective regions and a portion of the magnetic thin film adjacent the selective regions. The substrate is placed to receive the energized ions. The portions of the magnetic thin film are rendered to exhibit a magnetic property different than selective other portions. A method for patterning a magnetic media with a magnetic thin film on both sides of the media is also disclosed.
    Type: Grant
    Filed: October 22, 2008
    Date of Patent: September 17, 2013
    Assignee: Applied Materials, Inc.
    Inventors: Steven Verhaverbeke, Omkaram Nalamasu, Majeed Foad, Mahalingam Venkatesan, Nety M. Krishna
  • Publication number: 20130236987
    Abstract: A method of fabricating workpieces includes one or more layers on a substrate that are masked with an ion implantation mask comprising two or more layers. The mask layers include a first mask layer closer to the substrate, and a second mask layer on the first mask layer. The method also comprises ion implanting one or more of the layers on the substrate. Ion implantation may form portions with altered physical properties from the layers under the mask. The portions may form a plurality of non-magnetic regions corresponding to apertures in the mask.
    Type: Application
    Filed: March 8, 2012
    Publication date: September 12, 2013
    Applicant: Hitachi Global Storage Technologies Netherlands B.V.
    Inventors: Kanaiyalal C. Patel, Kurt A. Rubin
  • Publication number: 20130164554
    Abstract: A method for manufacturing a porous device with restrictive layer comprises the steps of providing a porous structure having a micro pore structure, flattening the porous carrier to form a surface, and forming a restrictive layer on the surface of the porous carrier, a method for manufacturing said restrictive layer includes forming a nickel-chromium alloy layer on the surface of the porous carrier, forming a copper metal layer on the nickel-chromium alloy layer, forming a nickel metal layer having a top surface on the copper metal layer, and processing said nickel-chromium alloy layer, said copper metal layer and said nickel metal layer to form a plurality of channels communicating with the micro pore structure and the top surface. The restrictive effect and damping effect can raise anti-vibration ability of the porous device itself by formation of dual restrictive structure composed of the micro pore structure and the channels.
    Type: Application
    Filed: December 23, 2011
    Publication date: June 27, 2013
    Applicant: METAL INDUSTRIES RESEARCH & DEVELOPMENT CENTRE
    Inventor: Kuo-Yu Chien
  • Publication number: 20130164455
    Abstract: Embodiments described herein provide methods and apparatus for treating a magnetic substrate having an imprinted, oxygen-reactive mask formed thereon by implanting ions into a magnetically active surface of the magnetic substrate through the imprinted oxygen-reactive mask, wherein the ions do not reduce the oxygen reactivity of the mask, and removing the mask by exposing the substrate to an oxygen-containing plasma. The mask may be amorphous carbon, through which carbon-containing ions are implanted into the magnetically active surface. The carbon-containing ions, which may also contain hydrogen, may be formed by activating a mixture of hydrocarbon gas and hydrogen. A ratio of the hydrogen and the hydrocarbon gas may be selected or adjusted to control the ion implantation.
    Type: Application
    Filed: December 14, 2012
    Publication date: June 27, 2013
    Inventors: Martin A. Hilkene, Roman Gouk, Matthew D. Scotney-Castle, Peter I. Porshnev
  • Publication number: 20130142493
    Abstract: A structure is presented for use in optic and electro-optic devices. The structure comprises at least one region of an amorphous KLTN-based material in a KLTN-based material. Also provided is a method of processing a KLTN-based material, comprising at least one of the following: bombarding said KLTN-based material with light ions: and etching said KLTN-based material when in amorphous state by an acid; thereby allowing fabrication of one or more optical components within the KLTN-based material.
    Type: Application
    Filed: November 2, 2012
    Publication date: June 6, 2013
    Applicant: Yissum Research Development Company of the Hebrew University of Jerusalem
    Inventor: Yissum Research Development Company of the H